Document Number: MMG5004N
Rev. 0, 8/2006
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMG5004NR2
WLAN Power Amplifier
4.9--5.9 GHz, 24 dB, 23 dBm
802.11a WLAN POWER AMPLIFIER
InGaP HBT
CASE 1483--01
QFN 3x3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Collector Supply
VCC
5
V
Base Supply First Stage
VB1
5
V
Base Supply Second Stage
VB2
5
V
Base Supply Third Stage
VB3
5
V
VBIAS
5
V
IDC
130
mA
Symbol
Value
Unit
(1)
°C/W
Detector Bias Supply
Quiescent Current
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
RθJC
64
Case Operating Temperature Range
TC
-- 40 to +85
°C
Storage Temperature Range
Tstg
-- 55 to +150
°C
Table 3. ESD Protection Characteristics
Test Methodology
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Designed for 802.11a applications with frequencies from 4900 to 5900 MHz.
• 23 dBm P1dB CW @ 5.25 GHz
• Power Gain— 24 dB Typical @ f = 5.25 GHz, Class AB
• EVM — ≤3% @ Pout = 18 dBM @ PAE = 10% under OFDM, 64 QAM,
54 Mbps
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1,500 Units per 12 mm, 7 inch Reel.
Class
Human Body Model (per JESD22--A114)
1A (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG5004NR2
1
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
1
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted.) VCC = 3.3 Vdc, VB1, VB2, VB3 = 2.8 Vdc, VBIAS = 3 Vdc,
Symbol
Min
Typ
Max
Unit
P1dB
—
23
—
dBm
Power Gain
(Pout = 18 dBm, OFDM, 64 QAM, 54 Mbps)
Gp
—
24
—
dB
Error Vector Magnitude
(Pout = 18 dBm, OFDM, 64 QAM, 54 Mbps)
EVM
—
3
—
%
Total Current
(Pout = 18 dBm, OFDM, 64 QAM, 54 Mbps)
ICtotal
—
200
—
mA
Quiescent Current
ICQ
—
105
—
mA
Bias Control Reference Current
(ICQ = 105 mA)
Iref
—
7
—
mA
Gain Flatness
(Over 100 MHz)
GF
—
±0.2
—
dB
Gain Variation over Temperature
(--40 to 85°C)
—
—
±1
—
dB
Input Return Loss
IRL
—
--15
—
dB
Reverse Isolation
—
—
--40
—
dB
Second Harmonic
(Pout = 18 dBm, OFDM, 64 QAM, 54 Mbps)
—
—
--50
—
dBc
Third Harmonic
(Pout = 18 dBm, OFDM, 64 QAM, 54 Mbps)
—
—
--50
—
dBc
Ramp--On Time (10--90%)
tON
—
100
—
ns
Characteristic
ARCHIVE INFORMATION
Output Power at 1dB Compression, CW
ARCHIVE INFORMATION
ICQ = 105 mA, f = 5250 MHz
MMG5004NR2
2
RF Device Data
Freescale Semiconductor
Name
Pin
Number
Description
VCC1
1
Power supply for first stage amplifier.
VB1
2
Bias current control voltage for the first stage. The
VB1 pin can be combined with VB2 and VB3 into a
single current control voltage (VBC).
RFIN
3
RF input for the power amplifier. This pin is
DC--shorted to GND and AC--coupled to the
transistor base of the first stage.
VBIAS
5
Detector bias voltage supply.
VREF
6
Detector output voltage reference. Vout -- VREF is
useful for tracking detector performance over
temperature.
VOUT
7
Detector output voltage.
RFOUT
8, 9
RF output for the power amplifier. This pin is
DC--coupled and requires a DC--blocking capacitor.
VCC3
8, 9
Power supply for third stage amplifier.
VB2
10
Bias current control voltage for the second stage.
The VB2 pin can be combined with VB1 and VB3 into
a single current control voltage (VBC).
VCC2
11
Power supply for second stage amplifier.
VB3
12
Bias current control voltage for third stage. The VB3
pin can be combined with VB1 and VB2 into a single
current control voltage (VBC).
GND
Center
Metal
The center metal base of the QFN 3x3 package
provides both DC/RF ground as well as heat sink for
the power amplifier.
VB2 VCC2 VB3
12 11 10
VCC1 1
VB1 2
9
RFOUT, VCC3
8
RFOUT, VCC3
3
7
VOUT
RFIN
4
5
6
NC VBIAS VREF
(Top View)
Figure 1. Pin Connections
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Table 6. Functional Pin Description
MMG5004NR2
RF Device Data
Freescale Semiconductor
3
VB1
VCC1
VB2 VCC2
C1
C2
C3
VB3
VCC3
C4
C5
C6
Z4
RF
INPUT
Z1
Z2
Z3
Z5
RF
OUTPUT
C7
VBIAS
C8
VREF
C9
VOUT
Z1
Z2
Z3
Z4
PCB
0.010″ x 0.556″ Microstrip
0.010″ x 0.405″ Microstrip
0.010″ x 0.106″ Microstrip
0.004″ x 0.330″ Microstrip
Getek ML200M, 0.005″, εr = 3.8
Figure 2. MMG5004NR2 Test Circuit Schematic
Table 7. MM5004NR2 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C3, C5
100 pF Chip Capacitors
08055A101FAT2A
AVX
C2, C4, C6
1 μF Chip Capacitors
12065A105JAT2A
AVX
C7, C8, C9
27 pF Chip Capacitors
06035A270FAT2A
AVX
C10
0.7 pF Chip Capacitor
04025J0R788W
AVX
C11
22 pF Chip Capacitor
06035A220FAT2A
AVX
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C11
C10
MMG5004NR2
4
RF Device Data
Freescale Semiconductor
VB1
VCC1
VB2
VCC2
VB3
C6
C4
C1
VCC3
C2
C5
C11
C10
C7
C8
C9
VBIAS
VREF
VOUT
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
Figure 3. MMG5004NR2 Test Circuit Component Layout
MMG5004NR2
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
10
24.5
Gp, POWER GAIN (dB)
24
23.5
23
22.5
22
21.5
21
VCC = 3.3 Vdc, VB1, VB2, VB3 = 2.8 Vdc
f = 5250 MHz, OFDM, 64 QAM, 54 Mbps
20.5
6
2
10
14
18
7
6
5
4
3
2
1
22
2
6
10
14
18
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 4. Power Gain versus Output Power
Figure 5. Error Vector Magnitude versus
Output Power
22
350
VCC = 3.3 Vdc, VB1, VB2, VB3 = 2.8 Vdc
f = 5250 MHz, OFDM, 64 QAM, 54 Mbps
18
PAE, POWER ADDED EFFICIENCY (%)
8
0
20
14
12
10
8
6
4
300
275
250
225
200
175
150
2
125
0
100
6
2
10
14
18
22
2
6
10
14
18
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 6. Power Added Efficiency versus
Output Power
Figure 7. Total Current versus Output Power
10
22
40
VCC = 3.3 Vdc, VB1, VB2, VB3 = 2.8 Vdc
f = 5250 MHz, OFDM, 64 QAM, 54 Mbps
SMALL SIGNAL GAIN (dB)
30
1
0.1
0.01
VCC = 3.3 Vdc, VB1, VB2, VB3 = 2.8 Vdc
f = 5250 MHz, OFDM, 64 QAM, 54 Mbps
325
ICC, TOTAL CURRENT (mA)
16
Vout , DETECTOR OUTPUT VOLTAGE (V)
ARCHIVE INFORMATION
20
VCC = 3.3 Vdc, VB1, VB2, VB3 = 2.8 Vdc
f = 5250 MHz, OFDM, 64 QAM, 54 Mbps
9
20
10
0
--10
--20
--30
--40
--50
2
6
10
14
18
22
ARCHIVE INFORMATION
EVM, ERROR VECTOR MAGNITUDE (%)
25
--60
VCC = 3.3 Vdc, VB1, VB2, VB3 = 2.8 Vdc
0
2
4
6
8
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (GHz)
Figure 8. Detector Output Voltage versus
Output Power
Figure 9. Small Signal Gain (S21) versus
Frequency
10
MMG5004NR2
6
RF Device Data
Freescale Semiconductor
VCC = 3.3 Vdc, VB1, VB2, VB3 = 2.8 Vdc
IRL, INPUT RETURN LOSS (dB)
--2
--4
--6
--8
--10
--12
--14
--16
--20
0
2
4
6
8
10
--10
--20
--30
--40
--50
--60
--70
--80
--90
--100
VCC = 3.3 Vdc, VB1, VB2, VB3 = 2.8 Vdc
0
2
4
6
8
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 10. Input Return Loss (S11) versus
Frequency
Figure 11. Reverse Transconductance
Isolation (S12) versus Frequency
0
--2
ORL, OUTPUT RETURN LOSS (dB)
ARCHIVE INFORMATION
--18
0
--4
--6
--8
--10
--12
--14
--16
--18
--20
VCC = 3.3 Vdc, VB1, VB2, VB3 = 2.8 Vdc
0
2
4
6
8
f, FREQUENCY (GHz)
Figure 12. Output Return Loss (S22) versus
Frequency
10
ARCHIVE INFORMATION
0
REVERSE TRANSCONDUCTANCE ISOLATION (dB)
TYPICAL CHARACTERISTICS
10
MMG5004NR2
RF Device Data
Freescale Semiconductor
7
A
4X D
C
b 1
E
E/2
PIN1 ID
N=12
4X D
1
2
3
0.45
1
2
3
B
2
F
F/2
(Ny--1)e
L
0.25 MIN.
SEATING
PLANE
TOP VIEW
SIDE VIEW
e
(Nx--1)e
2
BOTTOM VIEW
NOTES:
1. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.20 AND 0.25 MM FROM
TERMINAL TIP.
2. N IS THE NUMBER OF TERMINALS (12).
Nx IS THE NUMBER OF TERMINALS IN X--DIRECTION
AND
Ny IS THE NUMBER OF TERMINALS IN Y--DIRECTION.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
DIM
A
B
C
D
E
F
b
e
Nx
Ny
SYMBOLS
EXPOSED PAD
MIN
1.15
MIN
NOM
MAX
3.00 BSC
3.00 BSC
-0.85
1.00
0.24
0.42
0.60
SEE EXPOSED PAD
SEE EXPOSED PAD
0.18
0.23
0.30
0.50 BSC
3
3
E
NOM
1.30
MAX
1.45
MIN
1.15
STANDARD
DETAIL ”A” -- PIN #1 ID AND TIE BAR MARK OPTION
F
NOM
1.30
MAX
1.45
Figure 13. MMG5004NR2 Specific Mechanical Outline Information
ARCHIVE INFORMATION
ARCHIVE INFORMATION
0.25 MIN.
MMG5004NR2
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
A
3
M
PIN 1 INDEX
AREA
2X
0.1 C
DETAIL G
B
M
2X
0.1 C
1.55
1.25
12
10
EXPOSED DIE
ATTACH PAD
DETAIL M
PIN 1 INDEX
9
1
1.55
1.25
3
7
DETAIL N
6
12X 0.75
0.50
9
4
12X 0.30
0.18
0.10
M
8X 0.5
C A B
VIEW M -- M
CASE 1483--01
ISSUE A
QFN 3x3
NOTES:
1. ALL DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND
TOLERANCES PER ASME Y14.5M, 1994.
3. THE COMPLETE JEDEC DESIGNATOR FOR
THIS PACKAGE IS: HF--PQFP--N.
4. FOR ANVIL SINGULATED QFN PACKAGES,
MAXIMUM DRAFT ANGLED IS 12 _.
5. PACKAGE WARPAGE MAX 0.05 MM.
6. CORNER CHAMFER MAY NOT BE PRESENT.
DIMENSIONS OF OPTIONAL FEATURES ARE
FOR REFERENCE ONLY.
7. CORNER LEADS CAN BE USED FOR
THERMAL OR GROUND AND ARE TIED TO
THE DIE ATTACH PAD. THESE LEADS ARE
NOT INCLUDED IN THE LEAD COUNT.
8. COPLANARITY APPLIES TO LEAD, CORNER
LEADS, AND DIE ATTACH PAD.
9. THIS DIMENSION APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.20 MM AND 0.25 MM FROM TERMINAL TIP.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
3
(continued)
MMG5004NR2
RF Device Data
Freescale Semiconductor
9
0.60
0.24
(45_)
(0.25)
0.60
0.24
DETAIL N
CORNER CONFIGURATION
6
6
ARCHIVE INFORMATION
DETAIL N
PREFERRED CORNER CONFIGURATION
0.1 C
1.0
0.8
1.00
0.75
0.05 C
0.05
0.00
C
DETAIL G
VIEW ROTATED 90_ CW
8
SEATING
PLANE
ARCHIVE INFORMATION
(0.25)
CASE 1483--01
ISSUE A
QFN 3x3
(continued)
MMG5004NR2
10
RF Device Data
Freescale Semiconductor
0.217
0.137
DETAIL S
(0.25)
0.217
0.137
(0.1)
DETAIL S
BACKSIDE PIN 1 INDEX
DETAIL M
PREFERRED BACKSIDE PIN 1 INDEX
7
TIE BAR MARK OPTION
PIN 1 ID
4X 0.23
0.13
(45_ )
4X 0.65
0.30
(0.45)
(0.35)
R0.2
PIN 1 ID
DETAIL M
DETAIL M
BACKSIDE PIN 1 INDEX OPTION
BACKSIDE PIN 1 INDEX OPTION
ARCHIVE INFORMATION
ARCHIVE INFORMATION
(0.25)
CASE 1483--01
ISSUE A
QFN 3x3
MMG5004NR2
RF Device Data
Freescale Semiconductor
11
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ARCHIVE INFORMATION
ARCHIVE INFORMATION
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© Freescale Semiconductor, Inc. 2006, 2008. All rights reserved.
MMG5004NR2
Document Number: MMG5004N
Rev. 0, 8/2006
12
RF Device Data
Freescale Semiconductor