Paper - Nanyang Technological University

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A 76% Efficiency Boost Converter with 220mV
Self-Startup and 2nW Quiescent Power for High
Resistance Thermo-Electric Energy Harvesting
1
Abhik Das1, 2, Yuan Gao2, Tony Tae-Hyoung Kim1
Nanyang Technological University, Singapore, 2Institute of Microelectronics, Singapore
Abhik2@e.ntu.edu.sg
Abstract— With the emergence of thin-film thermo-electric
generators (TEG), power density and sustainability of energy
harvesting sources have improved. These novel power sources
however exhibit high internal electrical resistances. Conventional
state-of-the-art boost converters encounter low efficiency and
potential startup failures when harvesting energy from such
sources. This paper presents a highly efficient boost converter for
thermo-electric energy harvesting systems based on a novel
Power-on-Reset (PoR) driven startup circuit. It utilizes the
feedback between TEG, the boost converter, and the PoR circuit,
converting a reset signal edge into a train of pulses. The proposed
startup circuit is automatically disabled once startup operation is
completed, and consumes the quiescent power of 2nW in steadystate. The proposed boost converter has a self-startup TEG
voltage of 220mV and a peak power conversion efficiency of 76%
with a minimum input for operation being 85mV.
startup circuits report completely electrical startup techniques
to harvest from limited DC power sources [4-10].
However, TEG such as TGP-751 possesses high internal
electrical resistance (ESR) between 240 - 350Ω. Higher ESR
limits the current and power available from the power source
due to the higher voltage drops across it. The limited available
power and voltage makes battery-less self-startup even more
difficult, affecting the operations of the previously reported
circuits [3-10]. In this paper, we propose a PoR-based startup
circuit with self-control of the duration and frequency of the
PoR pulses during startup. The pulses are initiated due to the
I. INTRODUCTION
Thermal energy is one of the most ubiquitous sources,
desirable for implantable and wearable devices. Various
renewable energy harvesters powered from light, vibration,
thermal, or bio-fuel sources are available depending on system
power dissipation, physical size, and reliability [1-2]. Such
energy sources replace batteries, provide long-lasting
operation for sub-mW applications, and eliminate the
difficulty in recharging and replacing it. Thermo-electric
generators (TEG) can manifest as temperature difference (∆T)
under any environmental conditions, making it more desirable.
Improved TEG elements such as MPG-D751 which uses
compounds of Bi, Sb, Te and Se, achieve smaller device area
with increased power density (100W/mm2), compared to
conventional bulk-material-based TEGs (2W/mm2) at ∆T of
less than 10 °C, which enables system miniaturization.
Electrically, a TEG can be modelled as an ideal voltage
source in series with internal resistance (ESR). The physical
dimensions of a TEG and the temperature difference between
human body and ambient are limited. Therefore, battery-less
startup from low voltages and power is challenging. One of
the major factors limiting the electrical startup is the threshold
voltage of MOSFETs. Advanced CMOS technology can
overcome this limitation at the cost of higher leakage power.
As an alternative solution, a startup circuit with the startup
voltage of 35 mV is reported [3]. However, it uses a MEMS
switch to aid the turn-on action at ultra-low voltage. In
addition, the efficiency can vary due to the uncertainty of the
MEMS switch after startup. Several other battery-less self-
978-1-4673-7472-9/15/$31.00 ©2015 IEEE
Fig. 1. Proposed harvester system architecture.
Fig. 2. Timing waveforms of operating sequences.
237
VIN
VOUT
L1
VOUT
L1
VTEG
VIN
P4
VD>VST(INV1)
L1
M1
P1
CLK1
Z
C1
Node charging (HIGH=VIN)
ST=Switching
Threshold
Node discharging (LOW=0)
(a)
r
I2
VIN
VD<VST(INV1)
L1
M1
CLK1
Z
M2
(a)
N1
C1
220 mV
CLK1
(b)
0V
220 mV
PoR
CPOUT
CLK1
CP
0V
CLK1'
Y
VIN
BC C
PoR
P4
X
INV1
L1
CLK1
D
Y
X
Fig. 3. (a) Auxiliary Booster, (b) Main Booster.
M1
N4
D
Y
X
Fig. 5. PoR circuit operation: (a) CLK1 'HIGH' phase, (b) CLK1 'LOW'
phase.
LOAD
CLK2
COUT
M1
LOAD
COU T
CLK1
I1
(b)
M3
VIN
r
BCC
The proposed energy harvesting system is illustrated in Fig. 1.
It consists of four main blocks; namely, Boost Converter Core
(BCC), Starter, Pulse Generator for Steady-state (PGS) and
Decision Switch (DS). DS and PGS form the Control Unit for
steady-state operation. The Starter consists of Power-on-Reset
(PoR) and Charge Pump (CP). BCC has two sub-blocks,
Auxiliary Booster (AB) and Main Booster (MB). The AB
block is comprised of a NMOS (M1), a diode-connected
PMOS (M3), an inductor (L1) and a capacitor (COUT).
Although conventional PoR does not produce oscillating
waveforms, the proposed PoR block automatically generates a
chain of pulses based on feedback action and the available
finite ESR of TEG at the falling edge before resetting
completely. The PoR-generated CLK1 drives CP and M1. The
peak amplitude of CLK1 at low voltages is lesser than M1’s
threshold voltage. CLK1 is therefore used to boost VIN to a
higher voltage CPOUT (Fig. 2) using CP, which powers PGS
and MB (M2 replaces M1 to form MB) in CP mode to boost
VOUT (when VOUT<0.45V). The schematics of AB and MB
are depicted in Fig. 3 (a) and 3 (b), respectively. If the CP
mode still persists after CLK1 settling at 0V, VOUT will be
eventually discharged. To avoid this, once VOUT is charged to
a preset voltage of 0.45 V, DS will switch the power supply of
PGS from CPOUT to VOUT for normal operation (VOUT
mode).
PoR is a reset circuit that is incorporated to detect power
applied to a chip and generate a reset impulse response for the
chip. The proposed PoR (Fig. 4) is designed to improvise the
ideal characteristics observed in PoR discussed in [10]. At the
beginning of startup, all the nodes inside the PoR circuit are at
0 V. VIN charges the on-chip capacitor C1 through the
VTEG
PROPOSED HARVESTER ARCHITECTURE AND
OPERATIONS
II.
transistors P4 and N4. Before the node D is charged beyond
the switching threshold of INV1 (ST_INV), Y follows VDD
and the node X remains LOW. M1’s gate driven by CLK1 has
the same polarity as Y and follows VDD. With the rise of
VDD, M1 is turned on weakly and the conduction current I1
(Fig. 5(a)) charges L1. When D is rises beyond ST_INV, Y
starts falling and M1 is turned off. The decrease of conduction
current (I2 in Fig. 5(b)) leads to smaller voltage drop across r.
This increases the VIN level, which increases the ST of the
inverters in PoR. If the voltage level at D (VD) is still lower
than the instantaneous ST_INV, CLK1 becomes HIGH again.
Therefore, the action of Y propagating to CLK1, which varies
the voltage drop across r, results in an oscillating nature of
CLK1 (Fig. 6), and continues until VD becomes greater than
ST_INV1 during the off-state of M1. This disables Starter and
M1 that minimizes the quiescent power in both. The frequency
of CLK1 is proportional to VIN and the size of N1, and
inversely proportional to r. The pulse duration and the number
of pulses increase with VIN and r. While they decrease with
BCC
difference in the voltage drops across the ESR at different
circuit conditions. The proposed startup circuit is
automatically disabled after startup to minimize the power and
leakage.
P3
Z
N3
P2
X
N2
P1
C1 Ch arging
N4
D
D
Y
N1
Ideal
PoR
C1
Idea l PoR Beh avio r
t=0
220 mV
0V
Fig. 6. Waveforms showing variations of PoR internal nodes
Fig. 4. Circuit Schematic of Proposed PoR
238
III. MEASUREMENT RESULTS
N, C1 affects only the start-time.
During phase (a), M1 is weakly conductive operating in the
sub-threshold region where Vx drops to enable the conduction
current (I1) during this short interval. Because of the
inductor's nature to resist a change across it, Vx will rise
again. At this point, as explained in phase (b), M1 reaches
sub-threshold saturation condition, and the current through L
stops rising and decreases with a small slope (VCLK >4UT).
When CLK1 becomes '0', the current though M1 is cut-off,
forcing Vx to shoot sharply and turn M3 on, during which L
discharges all its charges to COUT. UT is the thermal voltage.
Dickson's CP and the measured CPOUT waveform are
shown in Fig. 7 and Fig. 8, respectively. Note that CPOUT
will eventually decay if no switching from the CP mode to the
VOUT mode occurs during steady-state due to the absence of
pulses in CLK1. Therefore, the system switches its control
from the CP mode to the VOUT mode during this instant.
Selection between the CP mode and the VOUT mode is made
by DS (Fig. 9). DS comprises a multiplexer (MUX) and a
detector (DET). When the DET output (X) is at 0 (until
VOUT<450mV), MUX selects the CP mode. When
VOUT>450mV, the VOUT mode is selected by MUX. After
this, X1 follows VOUT. PGS consists of a controlled ring
oscillator (Fig. 10) followed by a frequency divider and a gate
buffer for driving M2 with the clock CLK2 in steady-state
(VOUT mode).
The proposed harvester system is implemented in a 65-nm
CMOS process. The harvester module contains TE-CORE7
[11] which contains the standalone Thermo-Generator
Package, TGP-751. For simplified measurements, a controlled
power supply with a series resistor (r) is used to emulate the
target TEG. For characterization and measurements of MPGD751 with the designed circuit, the power management circuit
inside the module was disconnected from MPG-D751. MPGD751 exhibits an electrical resistance of between 240 - 350Ω.
The characteristics of Micropelt’s TEG (MPG-D751) is shown
in Fig. 11. Characterization and measurements of the
proposed harvester with TEG has been executed after
disabling the module's boost converter.
Fig. 11. TEG V-I Characteristics.
CPOUT
VIN
CLK1
MUX
CLK1'
VOUT
CPOUT
0/1
X1
(a)
DET
CP
PGS
DS
Fig. 7. CP Schematic
VOUT
CLK1
CPOUT
DET Core
VOUT
220mV
VIN
500mV
Discharged
Startup time
10.5ms
X
VTEG
220mV
220mV
DET
Fig. 9. DS Schematic
Fig. 8. CPOUT waveform
(b)
Steady-state
VOUT
Ring Osc. Core
CLK1
VDD
VDD
D-F/F
Vgs
CLK2
VDD
1.3V
IN
Q
Q’
CLK1 reset
Self- generated Pulse-train
VTEG
OUT
Buffer
Vgs
(a)
Fig. 12. Measured Start-up transient at VTEG=220mV; r= 350Ω.
(b)
Fig. 10 (a). Ring Oscillator schematic for steady-state, (b) Frequency Divider
239
The startup operation at VTEG of 220 mV and r = 350Ω is
demonstrated in Fig. 12 (a). The exploded view of CLK1
pulses is highlighted in Fig. 12 (b). The resetting of CLK1 and
accordingly the Starter enhances the voltage gain further. The
PoR pulses reset after a finite period and VOUT settles at 1.3
V. As shown in Fig. 13, at r = 70Ω, the minimum startup
voltage of 170 mV was obtained. At lower values of r (070Ω), the startup voltage is inversely proportional to r. At
higher values of r (70 - 450Ω), however, the higher voltage
drop reduces the available VIN. After startup operation is
completed, it can harvest energy from the minimum voltage of
85 mV boosting VOUT to 550 mV. VOUT settles where the
power loss in HS is equal the harvested power. The peak
efficiency at r = 350Ω is 76% at the input of 180 mV as shown
in Fig. 14. The quiescent power of Starter and M1 together is
4nW, is 0.4% of the input power at 90 mV. The quiescent
power and the efficiency are measured at VTEG of 220 mV
and the input resistance of 350Ω after the circuit has acquired
steady-state. At VIN > 550 mV, the increased leakage in M1
and Starter degrades the quiescent power. TABLE I compares
this work with other state-of-the-art works. The test chip
micrograph with area 0.146µm2 is shown in Fig. 15.
Table I: Comparison chart with state-of-the-art work
QP (%)
Min. VTEG (mV)
150
(240-350)Ω
TEG’s range of r
0
100
200
r (Ω)
300
3
2
20
0
QP (%)
Efficiency (%)
4
40
1
0
100
200
300
VTEG (mV)
400
3.97
--
Min. VIN (mV)
--
--
30
--
85
40
330
50
380
220 (170)*
Peak Eff. (%)
61#
80
73
81†
76††
Process (nm)
130
--
65
130
65
Start-up mech.
Trfr.
Typical r (Ω)
5
1
2
PoR
L.T
CP
--
6.2
--
3
PoR
Up to
450†††
CONCLUSION
P. Glynne-Jones, and N. M. White (2001). Self-powered systems: A
review of energy sources. Sensor Review, 21, 91-97.
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Energy-Harvesting Interface Circuit with 35mV Startup Voltage,” IEEE
ISSCC Dig. Tech. Papers, pp. 486-487, Feb 2010.
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Oscillator by Fixed-Charge Programming and Capacitor Pass-On
Scheme,” IEEE ISSCC Dig. Tech. Papers, pp. 216-217, Feb. 2011.
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[6] J-P. Im et al., "A 40mV Transformer-Reuse Self-Startup Boost
Converter with MPPT Control for Thermoelectric Energy Harvesting,"
IEEE ISSCC Dig. Tech. Papers, pp. 104-106, Feb. 2012.
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ISSCC, pp. 106-107, Feb. 2012.
[8] A. Shrivastava, et al, "A 1.2µW SIMO Energy Harvesting and Power
Management Unit with Constant Peak Inductor Current Control
Achieving 83-92% Efficiency Across Wide Input and Output Voltages”
Symp. on VLSI Circuits, pp. 1-2, June 2014.
[9] S. Bandopadhyay, et. Al., “A 1.1 nW Energy-Harvesting System with
544 pW Quiescent Power for Next-Generation Implants,” IEEE J. Solid
State Circuits, vol. 49, no. 12, pp. 2812-2824. Dec. 2014.
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energy harvesting applications,” E.L., May 2013, vol. 49, no. 10.
[11] Micropelt GmbH, TE-CORE7, Preliminary Datasheet.
5
Peak Efficiency=
75.9 %
--
Start-up volt. (mV)
[1]
Fig. 13. Measured Start-up Voltages with r.
60
--
This Work
0.4
(4nW)**
REFERENCES
400
80
[8]
IV.
190
170
[5]
A highly efficient boost converter using a Power-on-Reset
based Starter is presented. By utilizing the differences in
voltage drop across the electrical series resistance of TEG for
different circuit conditions, the PoR can generate pulses at
ultra-low voltage and power. Since the resistance itself is the
key to the oscillating nature of the proposed PoR, it can
achieve the self-startup operation with high internal resistance
up to 450Ω. The PoR-based Starter implements three
functions such as providing pulses, disabling Starter after a
finite time period, and assisting CP to step-up its output
voltage.
Startup voltage of 170mV
obtained @r=70Ω
210
[7]
**@85mV, Quiescent power in Starter (2nW) + M1 (2nW) =4nW;
*170mV startup @r=70Ω; #@300mV; ††@180mV input; 1Transformer;
2
LC Tank Oscillator; 3CP+Boost; †@0.4V for boost converter; †††Circuit
can operate @r>450Ω with reduced efficiency
250
230
[6]
0
500
Fig. 14. Measured Efficiency and QP with VTEG.
Fig. 15. Test chip micrograph.
240
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