Rev. 1.1
LOW VOLTAGE C-MOS HIGH-PRECISION
TEMPERATURE SENSOR IC
S-8120BNP-DSE
UC
T
The S-8120BNP is a ultra-small packaged high-precision
temperature sensor IC that outputs voltage with a temperature
coefficient of -8.5mV/°C and a temperature accuracy of ±2.5°C,
and is able to operate at 2.7V. A temperature sensor, a constant
current circuit and an operational amplifier are integrated on a
single chip. The operating temperature ranges from -40°C to
+100°C. The S-8120BNP is superior in linearity over conventional
temperature sensors like thermistors. It can be applied to an ever
expanding wide range of applications that call for high-precision
thermal control.
n Block Diagram
Pin Assignment
SC-82AB
1
3
1.
2.
3.
4.
DI
4
Vdd
4
Vout
3
N.C.
2
Vss
-
Temperature sensor
SC
n
+
1
ON
TI
NU
E
D
PR
l Temperature accuracy : ±2.5°C (-30°C to +100°C)
l Linear Output Voltage : -8.5mV/°C
Ta = - 30°C : 1.821 V typ. (Vdd=3.0V)
Ta = +30°C : 1.323 V typ. (Vdd=3.0V)
Ta = +100°C : 0.715 V typ. (Vdd=3.0V)
l Nonlinearity : ± 0.5 % typ. ( -20°C to +80°C )
l Vss standard output
l Low voltage operation : Vdd min. = 2.7 V
l Max. load current :
50µA min. (-30 to +100°C)
l Ultra-small plastic package ( SC-82AB )
OD
n Features
Vdd
Vss
N.C.
Vout
2
( Top view )
Seiko Instruments Inc.
1
LOW VOLTAGE C-MOS HIGH-PRECISION TEMPERATURE SENSOR IC
S-8120BNP-DSE
n Absolute Maximum Ratings
Item
Power supply
voltage(Vss=0.0V)
Output voltage
Operating temperature
Storage temperature
Symbol
Vdd
Ratings
6.5
Unit
V
Vout
Topr
Tstg
Vss to Vdd
-40 to +100
-55 to +125
V
°C
°C
Item
Power supply voltage
Symbol
Vdd
UC
T
n Electrical characteristics
Condition
Ta = -30°C
Ta = +30°C
Ta = +100°C
Ta = -30°C
Vdd=5.0V Ta = +30°C
Ta = +100°C
Vdd=3.0V -30≤Ta≤+100°C
Vdd=5.0V -30≤Ta≤+100°C
-20 ≤ Ta ≤ +80°C
-30 ≤ Ta ≤ +100°C
-30 ≤ Ta ≤ +100°C
-50µA ≤ Iout ≤ +100µA
Vout
Temperature sensitivity
Vse
PR
Output voltage
OD
Vdd=3.0V


Typ.

1.821
1.323
0.715
1.823
1.326
0.718
-8.50
-8.50
±0.5
Max.
6.0
1.842
1.344
0.736
1.844
1.347
0.739
-8.22


Unit
V
V
V
V
V
V
V
mV/°C
mV/°C
%
µA
mV
∆NL
Operating temperature
Current consumption
Topr
- 40
+100

°C
Idd
80
140
220
Ta = + 25°C
µA
*1: Max. load current ( -: sink current into IC, +: source current from IC )
SC
ON
TI
NU
E
Iout
∆Vout
D
Nonlinearity
Max. load current (*1)
Load stability
DI
2
Min.
2.7
1.800
1.302
0.694
1.802
1.305
0.697
-8.78
Seiko Instruments Inc.
-50


±1.5
+100
±5.0
LOW VOLTAGE C-MOS HIGH-PRECISION TEMPERATURE SENSOR IC
S-8120BNP-DSE
n Definition of terms
1. Output voltage ( Vout )
Output voltage Vout
Output voltage Vout is defined as the voltage
measured between pin-4 and Vss.
Vout is linearly proportional to ambient
temperature.
S-8120BNP is tested for Vout at -30°C,+30°C
and +100°C.
max.
OD
UC
T
min.
+30°C
0°C
Ambient temperature Ta
-30°C
Temperature sensitivity Vse is defined as the
average slope of the Vout versus Ta curve
using the following formula.
D
{Vout(+100) - Vout( - 30)}
130
Output voltage Vout
Vout(-30)
slope : Temperature sensitivity
NU
E
Vse =
PR
2. Temperature sensitivity ( Vse )
+100°C
3. Nonlinearity ∆NL
ON
TI
Vout(+100): Output voltage at Ta=+100°C
Vout( - 30): Output voltage at Ta= - 30°C
Vout(+100)
-30°C
SC
DI
+100°C
Output voltage Vout
Nonlinearity ∆NL is defined as the deviation
of the Vout versus Ta curve from the best-fit
straight line over the device’s rated
temperature range.
a
∆NL = b
0°C
+30°C
Ambient temperature Ta
a
Vout(-20)
Vout vs. Ta curve
× 100
a
b
a
a : The maximum deviation of the Vout vs.
Ta curve from the best-fit straight line
between - 20°C and +80°C.
b : The difference of the output voltage
between - 20°C and +80°C.
Best-fit
straight line
Vout(+80)
-20°C
Seiko Instruments Inc.
0°C
Ambient temperature Ta
+80°C
3
LOW VOLTAGE C-MOS HIGH-PRECISION TEMPERATURE SENSOR IC
S-8120BNP-DSE
n Typical performance characteristics
Heat response (TYP)
Ambient temperature (Ta) - Output voltage (Vout)
from 25°C air into 100° C air.
2000
1400
1800
1300
1600
Output
voltage
Vout[mV]
1200
TYP
MIN
MAX
1400
1200
Output
voltage
Vout[mV]
1100
1000
900
1000
800
800
-20
0
20
40
60
80
100
600
0
Temperature Ta[°C]
6
5
4
3
2
1
0
1811
1807
1804
2
NU
E
Current consumption
150
Idd[µA]
Output
voltage
Vout[mV]
50
0
-40
-20
0
20
ON
TI
100
40
60
80
SC
5
6
Ta=+30°C (TYP)
1312
1311
1310
1309
1308
1307
100
1306
2
3
4
5
Power supply voltage Vdd[V]
6
Power supply voltage (Vdd) - Output voltage (Vout)
Ta=+100°C (TYP)
707
706
705
Output
voltage
Vout[mV]
DI
50
4
1313
Power supply voltage(Vdd) - Current consumption (Idd)
Ta=30°C (TYP)
100
3
Power supply voltage Vdd[V]
Power supply voltage (Vdd) - Output voltage (Vout)
Temperature Ta[°C]
200
180
1808
D
0
60
80
20
100
40
Ambient temperature Ta[°C]
The best-fit straight line : Vout = -8.5mV/°C× Ta°C+1568mV
-20
200
Current consumption
150
Idd[µA]
150
1805
250
250
120
1806
Ambient temperature Ta - Current comsumption Idd (TYP)
300
90
Time [sec]
1809
Output
voltage
Vout[mV]
PR
TYP
MAX
MIN
300
60
OD
1810
-1
-2
-3
-4
-5
-6
-40
704
703
702
701
700
0
2
4
30
Power supply voltage (Vdd) - Output voltage (Vout)
Ta=-30°C (TYP)
Accuracy -Temperature (Vdd=5V)
Approximate
temperature
Ta' - Ta [°C]
UC
T
700
600
-40
3
4
Power supply voltage Vdd[V]
5
6
2
Seiko Instruments Inc.
3
4
Power supply voltage Vdd[V]
5
6
LOW VOLTAGE C-MOS HIGH-PRECISION TEMPERATURE SENSOR IC
S-8120BNP-DSE
Start up response
Ta=25°C, CL=0.01µF, RL=10MΩ
Vdd
2V/div
( = 2.7V )
UC
T
GND
1V/div
GND
OD
Vout
200µsec/div
PR
Ta=25°C, CL=0.01µF, RL=10MΩ
Vdd
( = 6V )
2V/div
NU
E
D
GND
ON
TI
Vout
1V/div
GND
200 µsec/div
Vdd
SC
( = 6V )
Ta=25°C, CL=10pF, RL=10MΩ
2V/div
DI
GND
Vout
1V/div
GND
200µsec/div
Seiko Instruments Inc.
5
LOW VOLTAGE C-MOS HIGH-PRECISION TEMPERATURE SENSOR IC
S-8120BNP-DSE
Load stability ∆Vout ( Vdd = 2.7 V )
1740
Ta=-20°C
1734
1728
Vout(mV)
UC
T
Output voltage
1722
1710
-200
0
200
OD
1716
400
600
800
PR
Load Current Iout [µA]
1320
Vout(mV)
1308
1302
ON
TI
1296
NU
E
Output voltage
0
200
400
600
800
Load Current Iout [µA]
SC
1290
-200
Ta=30°C
D
1314
730
Ta=100°C
DI
724
718
Output voltage
Vout(mV)
712
706
700
-200
0
200
400
Load Current Iout [µA]
6
Seiko Instruments Inc.
600
800
NP004-A 990531
SC-82AB
Unit:mm
Dimensions
1.3±0.2
4
0.15
3
1.25 2.1±0.3
UC
T
0.05
0.16
0.4
0.3
1.1max
PR
0.9±0.1
+0.1
-0.06
OD
2
1
Taping Specifications
2.0±0.05
1.75±0.1
4.0±0.1
Reel Specifications
1 reel holds 3000 ICs.
12.5max.
1.1±0.1
0.2±0.05
ON
TI
4.0±0.1
+0
φ180 -3
3.5±0.1
8.0±0.2
(2.0) 2.6±0.2
+1
φ60 -0
SC
1.05±0.1
DI
+0.1
1.5 -0.05
NU
E
D
0∼0.1
9.0±0.3
Winding core
21±0.5
φ13±0.2
T2 type
2±0.2
(60°)
Feed direction
(60°)
UC
T
OD
PR
D
NU
E
ON
TI
SC
•
•
DI
•
•
The information herein is subject to change without notice.
Seiko Instruments Inc. is not responsible for any problems caused by circuits or other diagrams
described herein whose industrial properties, patents or other rights belong to third parties. The
application circuit examples explain typical applications of the products, and do not guarantee any
mass-production design.
When the products described herein include Strategic Products (or Service) subject to regulations,
they should not be exported without authorization from the appropriate governmental authorities.
The products described herein cannot be used as part of any device or equipment which influences
the human body, such as physical exercise equipment, medical equipment, security system, gas
equipment, vehicle or airplane, without prior written permission of Seiko Instruments Inc.