Application Note AN35 9380 Carroll Park Drive San Diego, CA 92121, USA Tel: 858-731-9400 Fax: 858-731-9499 www.psemi.com Configuring the PE42850 as an SP3T or SP5T Introduction Summary PE42850 is designed to be a high power (~30 Watts) SP5T switch. A popular use of this switch is in land mobile radio (LMR) applications, where the number of bands required can vary depending on the region of operation. In order to support these multiple use cases, unused switch ports can be either properly terminated or left open with no discernible effect on switch performance. Configure PE42850 as an SP3T Compare SP3T simulated performances with Alternatively, it is possible to optimize its TX insertion loss performance in a lower throw SP3T configuration by making some circuit modifications around the RF pins. This should be accompanied by the use of corresponding control logic options already designed into the part. Besides s-parameters, all other performance specifications will remain the same as per the datasheet, i.e. PMAX, compression, linearity, switching time, etc. will be unchanged. DUT only (no matching) vs transmission line matching vs lumped inductor matching Show measured performance with inductor match for SP3T Show simulated and measured performance with similar methodology for SP5T configuration This application note details the circuit options recommended for SP3T and SP5T operation and has simulated and measured data to back them up. Document No. DOC-61890-1 │ www.psemi.com ©2014 Peregrine Semiconductor Corp. All rights reserved. For applications support, please visit www.psemi.com Page 1 of 11 AN35 Application Note Configure PE42850 as an SP3T To configure PE42850 as an SP3T, it is recommended to tie TX1 (Pin 2) to TX2 (Pin 4) and TX3 (Pin 21) to TX4 (Pin 23) as shown in Figure 1. Figure 1. Layout TX4 (Pin 23) TX1 (Pin 2) High Impedance Trace High Impedance Trace TX3 (Pin 21) TX2 (Pin 4) Similar to the SP5T configuration, narrow high-Z (~100Ω) traces are used near each port to improve impedance matching for PE42850 as an SP3T. A trace length of 250 mil is optimum for matching each port. Alternatively, if space is a constraint, a 3.6 nH inductor can be used instead of the narrow trace at each port to provide the required match. The truth table is obtained from the datasheet. Table 1. Truth Table Path V3 V2 V1 ANT – RX Attenuated L L L ANT – TX1 L L H L H L L H H ANT – RX H L L ANT – TX3 H L H H H L H H H ANT – TX2 ANT – TX1 and TX2 1 ANT – TX4 1 ANT – TX3 and TX4 Note: In a 2TX–1RX SP3T configuration, TX1 and TX2 are tied and TX3 and TX4 are tied respectively. For applications support, please visit www.psemi.com Page 2 of 11 Document No. DOC-61890-1 │ UltraCMOS® RFIC Solutions ©2014 Peregrine Semiconductor Corp. All rights reserved. AN35 Application Note PE42850 Performance as an SP3T Simulation results for the SP3T case: Figures 2–4 show circuits used to simulate SP3T performance in ADS. The first circuit (Figure 2) only includes the SP3T s-parameter (vector de-embedded DUT-only) file. The 2nd circuit (Figure 3) includes the SP3T s-parameter file and an ADS Microstrip Transmission line (TL), modeled after Peregrine’s PE42850 evaluation board’s thin trace, with a length of 250 mil. The 3rd circuit (Figure 4) includes the SP3T sparameter file and a 3.6 nH lumped inductor model from Coilcraft. Figure 5 shows the simulated TX insertion losses of the aforementioned three cases. The matching is observed to significantly reduce the insertion loss, especially at higher frequencies. There is also a significant improvement in the return loss, as shown in Figure 6. Comparable performance improvement is obtained by using either the inductor or TL match. Figure 2. DUT Only – + Term Term4 Num = 4 Z = 50Ω S-Parameters S_Param SP1 Start = 0.01 GHz Stop = 2 GHz Step = 10 MHz 4 1 + Term Term1 Term Term1 Num = 1 Z = 50Ω – Z = 50Ω Num = 1 2 3 Ref + Term Term2 Num = 2 S4P SNP1 – Z = 50Ω + Term Term3 – Num = 3 Z = 50Ω Document No. DOC-61890-1 │ www.psemi.com ©2014 Peregrine Semiconductor Corp. All rights reserved. For applications support, please visit www.psemi.com Page 3 of 11 AN35 Application Note Figure 3. DUT + TL Matching – Term Term8 MSub MSUB MSub1 Num = 8 Z = 50Ω + H = 28.0 mil Er = 4.3 Mur = 1 Cond = 6E+7 T = 2.1 mil TanD = 0.01 MLIN TL4 Subst = “MSub1” W = 12.0 mil L = TxLen mil 4 1 + Term Term5 Num = 5 Z = 50Ω MLIN TL6 – Subst = “MSub1” W = 12.0 mil L = TxLen mil 2 3 + Ref S4P SNP2 Term Term6 MLIN TL7 Subst = “MSub1” W = 12.0 mil L = TxLen mil MLIN TL5 – Num = 6 Z = 50Ω Subst = “MSub1” W = 12.0 mil L = TxLen mil + Var Eqn VAR VAR1 Term Term7 TxLen = 250 {t} – Num = 7 Z = 50Ω Figure 4. DUT + Lumped Inductance Matching – + Term Term12 Num = 12 Z = 50Ω CCI_0402CS SNP10 File = “04CS3N6.S2P” Type = 3.6 nH 4 + Term Term9 Num = 9 Z = 50Ω – 1 CCI_0402CS SNP14 File = “04CS3N6.S2P” Type = 3.6 nH 2 3 Ref S4P SNP12 CCI_0402CS SNP15 File = “04CS3N6.S2P” Type = 3.6 nH + Term Term10 – Num = 10 Z = 50Ω CCI_0402CS SNP11 File = “04CS3N6.S2P” Type = 3.6 nH + Term Term11 – Num = 11 Z = 50Ω For applications support, please visit www.psemi.com Page 4 of 11 Document No. DOC-61890-1 │ UltraCMOS® RFIC Solutions ©2014 Peregrine Semiconductor Corp. All rights reserved. AN35 Application Note Figure 5. Insertion Loss Figure 6. Return Loss Document No. DOC-61890-1 │ www.psemi.com ©2014 Peregrine Semiconductor Corp. All rights reserved. For applications support, please visit www.psemi.com Page 5 of 11 AN35 Application Note Measured SP3T Performance with Inductor Match Figure 7 shows the measured results for the SP3T with L = 3.6 nH when ANT to TX1 and TX2 is ON. The inductor is in an 0402 package. At 870 MHz, insertion loss = 0.28 dB and return loss is around 28 dB. Although the measured insertion loss with the discrete inductor match is higher than the simulated result, it still results in a significant improvement over the SP5T case (see “Simulation and Measurement for SP5T Configuration”). Figure 7. Measured IL and RL (TX Port) For applications support, please visit www.psemi.com Page 6 of 11 Document No. DOC-61890-1 │ UltraCMOS® RFIC Solutions ©2014 Peregrine Semiconductor Corp. All rights reserved. AN35 Application Note Simulation and Measurement for SP5T Configuration Simulation results for SP5T case: Figures 8–10 show circuits used to simulate SP5T performance in ADS. The methodology used here is very similar to the SP3T case. The value of the matching inductor however is reduced to 2.4 nH (and alternatively the TL length is 200 mil, exactly as in the PE42850 EVB). Figure 11 shows the TX insertion loss of the three cases. Again, the matching is observed to significantly reduce insertion loss, especially at higher frequencies. This is accompanied by a significant improvement in the return loss, as shown in Figure 12. As before, comparable performance is obtained by using either the inductor or TL match. Figure 8. DUT Only – + Term Term6 Num = 6 Z = 50Ω S-Parameters S_Param SP1 Start = 0.01 GHz Stop = 2 GHz Step = 10 MHz 6 + Term Term1 Num = 1 Z = 50Ω 1 5 2 4 3 – + Term Term5 Ref – Num = 5 Z = 50Ω S6P SNP1 + + Term Term2 – Num = 2 Z = 50Ω Term Term4 + – Num = 4 Z = 50Ω Term Term3 – Document No. DOC-61890-1 │ www.psemi.com ©2014 Peregrine Semiconductor Corp. All rights reserved. Num = 3 Z = 50Ω For applications support, please visit www.psemi.com Page 7 of 11 AN35 Application Note Figure 9. DUT + TL Match – Term Term12 + Var Eqn VAR VAR1 MSub MSUB MSub1 Num = 12 Z = 50Ω H = 28.0 mil Er = 4.3 Mur = 1 Cond = 6E+7 T = 2.1 mil TanD = 0.01 MLIN TL11 TxLen = 200 {t} Subst = “MSub1” W = 12.0 mil L = TxLen mil 6 1 + MLIN TL7 Term Term7 Num = 7 Z = 50Ω – 5 2 Subst = “MSub1” W = 12.0 mil L = TxLen mil MLIN TL10 + Subst = “MSub1” W = 12.0 mil L = TxLen mil 4 3 S6P SNP8 Subst = “MSub1” W = 12.0 mil L = TxLen mil MLIN TL9 Ref Subst = “MSub1” W = 12.0 mil L = TxLen mil MLIN TL12 Subst = “MSub1” W = 12.0 mil L = TxLen mil Term Term5 – + MLIN TL8 Num = 5 Z = 50Ω Term Term11 – Num = 11 Z = 50Ω + Term Term10 + – Num = 10 Z = 50Ω Term Term9 Num = 9 Z = 50Ω – Figure 10. DUT + Lumped Inductance Match – Term Term18 Num = 18 Z = 50Ω + CCI_0402CS SNP17 File = “04CS3N4.S2P” Type = 2.4 nH 6 + Term Term13 Num = 13 Z = 50Ω – 1 CCI_0402CS SNP20 5 2 File = “04CS3N4.S2P” Type = 2.4 nH CCI_0402CS SNP19 File = “04CS3N4.S2P” Type = 2.4 nH + Term Term14 Num = 14 – Z = 50Ω CCI_0402CS SNP21 4 3 CCI_0402CS SNP16 Ref File = “04CS3N4.S2P” Type = 2.4 nH + Term Term17 Num = 17 – Z = 50Ω File = “04CS3N4.S2P” Type = 2.4 nH S6P SNP15 CCI_0402CS SNP18 File = “04CS3N4.S2P” Type = 2.4 nH + + Term Term16 Num = 16 – Z = 50Ω Term Term15 – Num = 15 Z = 50Ω For applications support, please visit www.psemi.com Page 8 of 11 Document No. DOC-61890-1 │ UltraCMOS® RFIC Solutions ©2014 Peregrine Semiconductor Corp. All rights reserved. AN35 Application Note dB(S(14,13))_InductorMatch dB(S(8,7))_TxLineMatch dB(S(2,1))_DUT_ONLY Figure 11. Insertion Loss dB(S(13,13))_InductorMatch dB(S(7,7))_TxLineMatch dB(S(1,1))_DUT_ONLY Figure 12. Return Loss Document No. DOC-61890-1 │ www.psemi.com ©2014 Peregrine Semiconductor Corp. All rights reserved. For applications support, please visit www.psemi.com Page 9 of 11 AN35 Application Note Figure 13 shows the measured results for SP5T with L = 2.4 nH at ANT and TX2. The inductor is in an 0402 package. At 870 MHz, insertion loss = 0.38 dB and return loss is around 20 dB. The measured insertion loss with a discrete inductor match is quite close to the simulated data. Figure 13. Measured IL and RL (TX Port) Figure 14 shows an overlay comparison of TX insertion losses obtained in both the SP3T and SP5T setup, and highlights the improvement of the matched SP3T over the matched SP5T. As can be seen, it is possible to obtain better than 25% improvement over the band by using the modified layout and matching of the SP3T configuration. While this measured data is specific to a lumped match, similar improvement is also seen with the distributed match. Figure 14. Measured IL (SP3T vs. SP5T) 0 40 ‐0.05 35 ‐0.1 ‐0.15 ‐0.2 ‐0.25 SP3T ‐0.3 SP5T ‐0.35 IL Improvement (%) Insertion Loss (dB) Insertion Loss: SP3T vs SP5T (Lumped Inductor match) % Insertion Loss Improvement of SP3T over SP5T (Lumped Inductor Match) 30 25 20 15 10 % IL Improvement 5 ‐0.4 0 ‐0.45 0 0.2 0.4 0.6 0.8 1 1.2 Frequency (GHz) For applications support, please visit www.psemi.com Page 10 of 11 1.4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Frequency (GHz) Document No. DOC-61890-1 │ UltraCMOS® RFIC Solutions ©2014 Peregrine Semiconductor Corp. All rights reserved. AN35 Application Note Conclusion This application note provides information on how to configure PE42850 as an SP3T or SP5T switch. Its performance is optimized by providing inductive matching of a distributed or lumped element type. As an SP3T switch, further TX insertion loss improvement can be realized by some circuit modification around the RF pins, coupled with alternative control logic options already provided in the datasheet. In the modified SP3T configuration, we see a >25% improvement in insertion loss compared to the SP5T configuration. The information in this document is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user’s own risk. No patent rights or licenses to any circuits described in this datasheet are implied or granted to any third party. Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. The Peregrine name, logo, UltraCMOS and UTSi are registered trademarks and HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp. Peregrine products are protected under one or more of the following U.S. Patents: http://patents.psemi.com. Document No. DOC-61890-1 │ www.psemi.com ©2014 Peregrine Semiconductor Corp. All rights reserved. For applications support, please visit www.psemi.com Page 11 of 11