High-Frequency Soft-switching LCC Resonant Current-fed DC/DC converter with High Voltage Gain for DC Microgrid Application Devendra Patil, Akshay K. Rathore, Senior Member, IEEE, Dipti Srinivasan, Senior Member, IEEE, and Sanjib K. Panda, Senior Member, IEEE Electrical and Computer Engineering National University of Singapore 117583 Singapore eledrp@nus.edu.sg; eleakr@nus.edu.sg; dipti@nus.edu.sg; eleskp@nus.edu.sg Abstract— This paper proposes a high frequency soft switched high voltage gain dc/dc converter for DC microgrid application. The proposed converter employs a half-bridge resonant boost converter at input and a voltage quadruple circuit at output. Resonant boost converter is operated at frequency of 150 kHz to gain advantage of low output voltage ripple and reduced magnetics. Zero voltage turn-on is achieved for all switches. Zero current turn-on and turn-off is achieved for all diodes. High frequency film capacitors increase life time of the converter. Voltage stress across switches is less and is clamped naturally without external snubber circuit. Experimental converter rated at 300 W has been designed, and tested to verify the analysis, design and demonstrate the performance of the proposed converter. Keywords – High-frequency, Soft-switching, converter, DC/DC converter, High gain I. Current-fed INTRODUCTION Microgrid is an evolving area that reduces tension on utility by locally supplying power to load by acting like a local grid [1]. Recently, DC microgrid is becoming quite popular as several energy sources i.e. solar photovoltaic (PV), fuel cells generate DC power. Therefore, it requires less power conversion stages and makes the system more efficient and reliable [2]. Fig. 1 shows a typical architecture of the DC microgrid. It has a DC bus of 380V and various energy sources and energy storage connected to DC bus. Generally, PV array generates low voltage of around 40-50V. To interface PV with DC bus of 380V a gain of almost 10 times is required. Boost converter is normally used for stepping up the DC voltage. However it has to operate at extreme duty cycle in order to obtain high gain. High duty cycle leads to high voltage stress across semiconductor devices and therefore, the efficiency of the boost converter at higher duty cycle is normally low [3]. In literature, several high voltage gain converters have been reported [4-11]. Most of the hard switching converters have problems of low efficiency, bulky magnetics due to low switching frequency and high electromagnetic interference (EMI) [12]. Soft-switching high voltage gain converters are promising due to low EMI, high efficiency, and smaller magnetics [12-16]. k,((( In literature different soft-switching converters have been reported. Park et.al [12] proposed a soft-switching dc/dc converter, which has zero voltage switching (ZVS) turn-on and zero current switching (ZCS) turn-off for diode. However voltage stress across devices is high and voltage gain of the converter is increased by 2x as compared to conventional boost converter. Choi et. al [14] proposed a modified PWM method to reduce the turn off current stress of switches and to achieve ZCS for the output diode. However, the turn-off current is quite high and lead to significant switching losses and limit the high frequency operation of the converter. An integrated boost converter with stacked structure at the output to increase the output voltage was proposed in [17], which has features of ZVS turn-on of the switches. Nevertheless, switching frequency cannot be increased due to turn off switching losses of switch and reverse recovery losses of the diode. A quasi resonant high step-up dc/dc converter was proposed in [18] with reduced turn-off switch current. However, voltage stress across devices is higher and is not clamped. This paper proposes a soft-switching LCC resonant based high voltage gain dc/dc converter. The proposed converter has the following merits: (i) ZVS turn-on for both switches, (ii) ZCS turn-on and turn-off for all diodes, (iii) low output voltage ripple and electrolytic capacitor-less converter, (vi) LCC resonant circuit may have a gain above unity, (vii) Switch voltage is clamped without additional snubber circuit. II. OPERATION AND ANALYSIS OF PROPOSED CONVERTER Fig. 2 shows the proposed converter, which is composed of (a) integrated boost LCC resonant switching cell to integrate source while achieving soft-switching of semiconductor devices and (b) voltage multiplier circuit to increase the overall voltage gain of the converter. The half-bridge LCC resonant switching cell has two switches M1 and M2 and both are switched complementarily with appropriate dead time. The resonant inductor, Lr, parallel capacitor, CP and half bridge capacitor, C4 forms a LCC resonant circuit. The output circuit is a voltage quadruple circuit, which increases the gain by 4x. The key steady-state operating waveforms of the proposed converter are shown in Fig. 3. Fig. 1. Typical configuration of DC microgrid. Fig. 2. Proposed soft switched dc/dc converter The converter has four operating modes explained below. The equivalent circuits of operation are shown in Fig. 4. Interval 1 (Fig. 4(a); t0 < t <t1): In this interval switches M1 and M2 are off. At t=t0 parasitic capacitance C1 start discharging and C2 start charging. At output side, diode D4 is conducting to charge capacitor C5 and diode D6 is conducting to charge capacitor C8. Power is transferred to the load by energy stored in the output capacitor C7 and C8. At t=t1 capacitor C1 is discharged completely and capacitor C2 is charged to Vin/1-D. (a) (b) (c) (d) Fig. 3. Theoretical waveform of the proposed converter At output side, capacitor C5 and C8 are charging. Output capacitor C7 and C8 continue to supply power to load. Interval 3 (Fig. 4(c); t2 < t <t3): In this interval, M1 is turned on with ZVS. Resonant inductor current iLr starts flowing through switch M1, capacitor C3, resonant inductor Lr and capacitor CP. Input inductor current(iL) start decreasing linearly. At end of this mode diode D4 and D6 turns off with zero current. The current through various components is given by ܸ ሺݐଶ ሻെܸ ሺݐଶ ሻ ݅ ൌ య ή ݓ ሺ ݐെ ݐଶ ሻሺͳሻ ܼ (e) where, ݓ ൌ ට య ାು ೝ ೝ య ೝ ሺయ ାು ሻ and ݖ ൌ ට య ು ܸ െ ܸయ ሺݐଶ ሻ െ ܸర ሺݐଶ ሻ ሺ ݐെ ݐଶ ሻሺʹሻ ݅ ሺݐሻ ൌ ݅ ሺݐଶ ሻ െ ܮ (f) Interval 4 (Fig. 4(d); t3 < t <t4): During this interval the switch M1 is turned on. At output side all diodes are reverse biased. The power to load is supplied by energy stored in output capacitor C7 and C8. At t=t4 switch M1 is turned off. Interval 5 (Fig. 4(e); t4 < t <t5): During this interval, switch M1 and M2 are turned off. In this interval, parasitic capacitor C1 is charged and parasitic capacitor C2 is discharged. At output side no diode is conducting and no power is transferred from input to output. Power to load is supplied by capacitor C7 and C8. At end of this interval capacitor C2 is discharged completely and capacitor C1 is charged to Vin/1-D. (g) Interval 6 (Fig. 4(f); t5 < t <t6): At t=t5 diode D2 is forward biased by difference of resonant inductor current iLr and input inductor current iL. At output side all diodes are reverse biased conducting. (h) Interval 7 (Fig. 4(g); t6 < t <t7): In this interval, switch M2 is turned on with ZVS. Input inductor L starts charging linearly with a slope. Resonant inductor Lr, capacitor CP and C4 resonant together. The resonant current through Lr is given by ݅ ൌ െ ర ሺ௧ల ሻା ሺ௧ల ሻ ೝ ݓ ሺ ݐെ ݐሻሺ͵ሻ Current through input inductor is given by ܸ ሺ ݐെ ݐሻ(4) ݅ ሺݐሻ ൌ ݅ ሺ ݐሻ ܮ (i) Interval 8 (Fig. 4(h); t7 < t <t8): In this interval, switch M2 is in on state. At t=t7 diode D3 gets forward biased. Energy stored in capacitors CP and C5 is transferred to C7. Simultaneously, output capacitor C7 and C8 supply power to load. (j) Fig. 4. Different operating modes of the proposed converter for the interval shown in Fig.3 Interval 2 (Fig. 4(b); t1 < t <t2): At t=t1 parasitic capacitance C1 is completely discharged and parasitic capacitance C2 is completely charged. The difference of input inductor current iL and resonant inductor current iLr passes through anti-parallel diode D1 of switch M1 causing zero voltage across switch M1. Interval 9 (Fig. 4(i); t8 < t <t9): During this interval, input inductor L is charging through switch M2. At output side diode D5 gets forward biased at t=t8.At this instant, capacitor CP starts charging capacitor C6. Simultaneously, capacitor CP and C5 charges capacitor C7. At end of this interval diode D5 and D3 are turned off with zero current. Interval 10 (Fig. 4(j); t9 < t <t10): In this interval all output diodes are in off state and power to load is transferred by output capacitor C7 and C8. Switch M2 is in on state and input inductor L is storing energy in it. At t=t10 switch M2 is turned off. III. VOLTAGE CONVERSION RATIO The total voltage gain of the converter is summation of the gain of boost converter, LCC resonant cell, and voltage quadruple. In case of unity gain of the LCC resonant cell, the total output voltage is given by: 4Vin (5) VO 1 D The voltage gain with respect to duty cycle is plotted in Fig. 5. It is clear that the proposed converter has 2x higher gain than conventional circuit [12]. TABLE I. SIMULATION AND EXPERIMENTAL PARAMETERS OF PROPOSED CONVERTER Parameters L C3 and C4 CP Output voltage PO, System power rating Input voltage, Vin Lr C5 and C6 C7, C8 and C9 Switching frequency, fs C3 M1 and M2 D1 and D2 Values 156ȝH 1ȝF 0.1ȝF 380V 300W 42V 13ȝH 10ȝF 20ȝF 150kHz 10ȝF IPB200N25N3G STTH30R04W The design equations are derived to determine the components’ ratings. 1) Average current through input inductor is given by ܲை ܫ ൌ ൌ ǤͳͶʹܣሺሻ ߟܸ 2) Duty cycle is selected at input voltage, i.e., Vin =42V and full load based on maximum switch voltage rating. ܦൌ At input voltage D=0.5578. ିସ ሺሻ 3) Value of input boost inductor is given by ܸ ܦ ܮൌ ሺͺሻ ȟܫ ݂௦ where, ǻ Iin is the boost inductor ripple current. For, ǻIin=1A, L=156μH. 4) In order to determine the value of resonant inductor Lr the ZVS condition for switch M1 and M2 has to be satisfied. The value of resonant Lr for achieving ZVS condition for M1 is given by ଶ ܸ ሺܥଵ ܥଶ ሻ ቀ ቁ ͳ െ ܦሺͻሻ ܮ ଶ െ ݅ ሺݐଵ ሻଶ ܫ௩ ZVS condition for switch M2 gives the value of Lr as ଶ ܸ ሺܥଵ ܥଶ ሻ ቀ ቁ ͳ െ ܦሺͳͲሻ ܮ ଶ ܫ௩ െ ݅ ሺݐଷ ሻଶ Gain Fig. 5. Voltage gain versus duty ratio of proposed converter and converter in [12]. IV. DESIGN OF CONVERTER In this Section, converter design procedure is illustrated by a design example for the following specifications: input voltage, Vin=42V, output voltage VO=380V, output power, PO=300W, switching frequency, fs=150kHz. The following assumption are made: (a) Efficiency of the converter is assumed 100% (b)Voltage ripple across capacitor C3, C4, C5, C6, C7 and C8 to be negligible. (c) All the components are ideal and lossless. Fig. 6 Graph showing various values of Lr to ensure ZVS for varying load condition for switch M1 and M2 Equations (9) and (10) helps get the value of resonant inductor Lr required to obtain ZVS for both switches M1 and M2. A curve between the value of Lr required to achieve ZVS turn-on of switch M1 and M2 and load power is plotted in Fig. 6. It should be observed that high value of Lr is required to achieve ZVS at light load. Therefore, it is difficult to achieve ZVS for switch M1 at lower power level. As compared to M1, the value of Lr required to achieve ZVS for low power level is quite less, so it is easy to operate switch M2 in ZVS condition over wide load range. From the plot value of Lr= 13μH is chosen to get ZVS for switch M1 for load greater than 30%. 5) The resonant frequency of the LCC is given by ݓ ൌ ඨ ܥଷ ܥ ሺͳͳሻ ܮ ܥ ܥଷ For resonant frequency of 146.4 kHz the C3=C4=1μF and CP=0.1μF. V. (c) SIMULATION AND EXPERIMENTAL RESULTS The designed converter rated at 300 W was first simulated using PSIM 9.03 to verify the analysis and design of the proposed converter. Later, an experimental prototype was designed and developed in the laboratory to demonstrate the performance of the converter. The components’ values are tabulated in Table I. Simulation waveforms match closely with the theoretical operating waveforms shown in Fig. 3. When both switches, M1 and M2 are in off state the difference of current, iL1 and iLr flows through anti-parallel diode, D1 before the switch, M1 is turned-on, causing ZVS turn-on as shown in Fig. 7(a). Fig. 7(b) shows that the anti-parallel diode of the switch, M2 conducts prior to its conduction resulting in its ZVS turn on. The voltage across diode D5 is almost trapezoidal in shape due to LCC resonant circuit and current through diode naturally commute to zero with ZCS and no turn-off recovery losses as shown in Fig. 7(c). Fig. 7(d) show the varying voltage across capacitor, CP and the 90° phase shift leading current through resonant inductor, Lr. Input voltage of 42V is given to the converter to get output voltage of 380V with duty cycle of M1 and M2 is 0.6 as shown in Fig.7(e). (d) (e) Fig. 7. Simulation waveforms at Vin =42V and full load: (a) iM1, VM1 and VGSM1 (b) iM2, VM2 and VGSM2, (c) diode current VD5 and iD5 , (d) voltage across parallel capacitor, VCP and current through resonant inductor current, iLr ,(e) )Input voltage, boost inductor current, iL1 and output voltage, VO. (a) Fig. 8. Experimental prototype of proposed dc/dc C converter. (b) Fig. 8 shows the experimental prototype developed in the laboratory. The details of the experimental converter are as follows. MOSFET’s, IPB200N25N3G (M1 and M2); Diode, STTH30R04W (D3-D6); Boost inductor, L1: CM610125 MPP core, 17 turns, measured inductance =130μH; Resonant inductor, Lr: PC47RM14Z-12, RM core, 6 turns. IR21814 driver ICs are used as a gate driver for gating the MOSFET’s. The components’ ratings along with the selected components are provided in Table I. The converter is tested for input voltage of 42V at full load. The experimental results are shown in Fig. 9. Fig. 9(a) shows the ZVS turn on of M1. The anti-parallel body diode of switch M1 is conducting before the switch starts conducting. Similarly, Fig. 9(b) confirms the ZVS operation of switch, M2. Output diodes of voltage quadruple circuit turns-on and turn-off in ZCS condition, thereby recovery losses are negligible as is shown in Fig. 9(c). Fig. 9(d) shows the gate signal, drain source voltage and drain current of M2. The resonant inductor current leads resonant capacitor current by 90° and it is confirmed in Fig. 9(e). Fig. 9(f) shows the input voltage of 42V is stepped-up to 380V with small voltage ripple in the output voltage. Boost inductor ripple current is also small. (a) (b) (c) (d) (e) (f) Fig.9. Experimental waveforms at Vin =42V and full load: (a) VM1 (50 V/div) and iM1 (5 A/div), (b) VM2(50 V/div) and iM2 (5 A/div), (c) diode current VD5 (100V/div) and iD5 (5A/div), (d) Gate source voltage across M2, VGSM2 (20V/div), VM2 (50V/div) and iM2 (5 A/div) (e)voltage across parallel capacitor, VCP (50V/div) and current through resonant inductor current, iLr (10A/div) and (f) Input voltage, Vin (20V/div), boost inductor current, iL1 (2A/div) and output voltage, VO (200V/div). [4] [5] [6] [7] [8] Fig. 10. Plots of efficiency versus output power obtained from experiments. Fig. 10 shows measured efficiency for different load conditions at Vin=42V. While maintaining soft-switching of the devices, the converter is able to achieve 92.5% efficiency at rated load. Peak efficiency of 94% is obtained. Above 89% efficiency is obtained down to 10% load. VI. CONCLUSION [9] [10] [11] A high efficiency high frequency and high voltage gain dc/dc converter is presented for DC microgrid application. The proposed converter achieves ZVS for switches and ZCS for diodes over a wide load range. Device voltage is clamped without any external snubber. The proposed converter has the following features: (i) ZVS turn-on for both switches, (ii) Reduced turn-off current for both switches, (iii) ZCS turn-on and turn-off for all diodes, (iv) High frequency magnetics, (v) low output voltage ripple and electrolytic capacitor-less converter, (vi) LCC resonant circuit has a gain above unity, (vii) Switch voltage is clamped. Detailed steady-state operation, analysis and design of the converter have been presented. Experimental results are demonstrated for 300W prototype. The theoretical analysis and simulation results match with experimental results closely. Soft-switching (ZVS of switches and ZCS of diodes) have been demonstrated as claimed. High efficiency is obtained over wide load range. [12] [13] [14] [15] [16] References [1] [2] [3] R.H. Lasseter, P.Piagi, 2004," Microgrid: A Conceptual Solution", Power Electronics Specialists Conference, PESC, vol.6, pp.4285-4290. Y. Ito, Y. Zhongqing and H. Akagi, "DC Microgrid based Distribution Power Generation System," in Power Electronics and Motion Control Conference, Aug. 2004. E. S. Silva , L. R. Barbosa , J. B. Vieira Jr., L. C. Freitas and V. J. Farias "An improved boost PWM soft-single-switched converter with low [17] [18] voltage and current stresses", IEEE Trans. Ind. Electron., vol. 48, no. 6, pp.1174 -1178, 2001. L.-S. Yang , T.-J. Liang and J.-F. Chen "Transformerless dc–dc converters with high step-up voltage gain", IEEE Trans. Ind. Electron., vol. 56, no. 8, pp.3144 -3152, 2009. C.-M. Young , M.-H. Chen , T.-A. Chang , C.-C. Ko and K.-K. Jen "Cascade Cockcroft-Walton voltage multiplier applied to transformerless high step-up DC-DC converter", IEEE Trans. Ind. Electron., vol. 60, no. 2, pp.523 -537, 2013. Hu Xuefeng and Gong Chunying, "A High Voltage Gain DC–DC Converter Integrating Coupled-Inductor and Diode–Capacitor Techniques," IEEE Transactions on Power Electronics, vol.29, no.2, pp.789-800, Feb. 2014. M. Prudente , L. L. Pfitscher , G. Emmendoerfer , E. F. Romaneli and R. Gules "Voltage multiplier cells applied to non-isolated converters", IEEE Trans. Power Electron., vol. 23, no. 2, pp.871 -887, 2008. F. L. Tofoli , D. de Souza Oliveira and Y. J. A. Alcazar "Novel nonisolated high-voltage gain dc–dc converters based on 3SSC and VMC", IEEE Trans. Power Electron., vol. 27, no. 9, pp.3897 -3907 2012. K.I. Hwu, C.F Chuang and W.C. Tu, "High Voltage-Boosting Converters Based on Bootstrap Capacitors and Boost Inductors," IEEE Transactions on Industrial Electronics, vol.60, no.6, pp.2178-2193, June 2013. L. Wuhua and H. Xiangning "Review of nonisolated high-step-up DC/DC converters in photovoltaic grid-connected applications", IEEE Trans. Ind. Electron., vol. 58, no. 4, pp.1239 -1250, 2011. D. Meneses , F. Blaabjerg , O. Garcia and J. A. Cobos "Review and comparison of step-up transformerless topologies for photovoltaic AC-module application", IEEE Trans. Power Electron., vol. 28, no. 6, pp.2649 -2663 2013. Park Sungsik and Choi Sewan, "Soft-Switched CCM Boost Converters With High Voltage Gain for High-Power Applications," IEEE Transactions on Power Electronics, vol.25, no.5, pp.1211-1217, May 2010. W. Li and X. He "High step-up soft switching interleaved boost converters with cross-winding-coupled inductors and reduced auxiliary switch number", IET Power Electron., vol. 2, no. 2, pp.125 -133 2009. Yohan Park, Jung Byoungkil and Choi Sewan, "Nonisolated ZVZCS Resonant PWM DC–DC Converter for High Step-Up and High-Power Applications," IEEE Transactions on Power Electronics, vol.27, no.8, pp.3568-3575, Aug. 2012. Jiang Lei, C.C. Mi, Li Siqi, Zhang Mengyang, Zhang Xi and Yin Chengliang, "A Novel Soft-Switching Bidirectional DC–DC Converter With Coupled Inductors," IEEE Transactions on Industry Applications, vol.49, no.6, pp.2730-2740, Dec. 2013. Lee Sanghyuk, Kim Pyosoo and Choi Sewan, "High Step-Up Soft-Switched Converters Using Voltage Multiplier Cells," IEEE Transactions on Power Electronics, vol.28, no.7, pp.3379-3387, July 2013. Ki-Bum Park; Gun-Woo Moon; Myung-Joong Youn, "Nonisolated High Step-Up Stacked Converter Based on Boost-Integrated Isolated Converter," Power Electronics, IEEE Transactions on , vol.26, no.2, pp.577,587, Feb. 2011. Park Ki-Bum, Moon Gun-Woo and Youn Myung-Joong, "High Step-up Boost Converter Integrated With a Transformer-Assisted Auxiliary Circuit Employing Quasi-Resonant Operation,", IEEE Transactions on Power Electronics, vol.27, no.4, pp.1974-1984, April 2012.