IRF7807TRPbF-1
IRF7807ATRPbF-1
HEXFET® Chip-Set for DC-DC Converters
VDS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
30
V
25
mΩ
12
nC
8.3
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
T o p V ie w
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF7807PbF-1
IRF7807APbF-1
SO-8
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
4000
Orderable Part Number
IRF7807TRPbF-1
IRF7807ATRPbF-1
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
25°C
Current (VGS ≥ 4.5V)
70°C
ID
Pulsed Drain Current
IDM
25°C
±12
8.3
6.6
6.6
66
66
2.5
PD
A
W
1.6
TJ, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
IS
2.5
2.5
Pulsed source Current
ISM
66
66
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
1
Units
V
8.3
70°C
Junction & Storage Temperature Range
IRF7807A
30
VGS
Continuous Drain or Source
Power Dissipation
IRF7807
VDS
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RθJA
Max.
50
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A
Units
°C/W
October 16, 2014
IRF7807/ATRPbF-1
Electrical Characteristics
IRF7807
Min Typ Max
Parameter
30
–
–
17
25
IRF7807A
Min Typ Max Units
30
–
–
V
VGS = 0V, ID = 250μA
17
25
mΩ
VGS = 4.5V, ID = 7A‚
V
VDS = VGS, ID = 250μA
μA
VDS = 24V, VGS = 0
Drain-to-Source
Breakdown Voltage*
V(BR)DSS
Static Drain-Source
on Resistance*
RDS(on)
Gate Threshold Voltage*
VGS(th)
Drain-Source Leakage
Current*
IDSS
Gate-Source Leakage
Current*
IGSS
Total Gate Charge*
Qg
12
Pre-Vth
Gate-Source Charge
Q gs1
2.1
2.1
Post-Vth
Gate-Source Charge
Q gs2
0.76
0.76
Gate to Drain Charge
Qgd
2.9
2.9
Switch Charge*
(Qgs2 + Qgd)
QSW
3.66
5.2
3.66
Output Charge*
Q oss
14
16.8
14
1.0
1.0
30
30
150
150
±100
±100
17
Conditions
12
VDS = 24V, VGS = 0,
Tj = 100°C
nA
17
VGS = ±12V
VGS = 5V, ID = 7A
VDS = 16V, ID = 7A
nC
16.8
VDS = 16V, VGS = 0
Ω
Gate Resistance
Rg
1.2
1.2
Turn-on Delay Time
td(on)
12
12
Rise Time
tr
17
17
Turn-off Delay Time
td (off)
25
25
Rg = 2Ω
Fall Time
tf
6
6
VGS = 4.5V
Resistive Load
VDD = 16V
ns
ID = 7A
Source-Drain Rating & Characteristics
Parameter
Min
Typ Max
Min
Typ Max Units
Diode Forward
Voltage*
VSD
Reverse Recovery
Charge„
Qrr
80
80
Reverse Recovery
Charge (with Parallel
Schotkky)„
Notes:
Qrr(s)
50
50

‚
ƒ
„
*
2
1.2
1.2
Conditions
V
IS = 7A‚, VGS = 0V
nC
di/dt = 700A/μs
VDS = 16V, VGS = 0V, IS = 7A
di/dt = 700A/μs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 7A
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q oss
Devices are 100% tested to these parameters.
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IRF7807/ATRPbF-1
Power MOSFET Selection for DC/DC
Converters
Drain Current
Control FET
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called the
Control FET, are impacted by the Rds(on) of the MOSFET,
but these conduction losses are only about one half of
the total losses.
Gate Voltage
t2
t3
t1
VGTH
This can be expanded and approximated by;
2
Drain Voltage
QGD
QGS2
QGS1
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
Figure 1: Typical MOSFET switching waveform
Ploss = (Irms 2 × Rds(on ) )
Synchronous FET
The power loss equation for Q2 is approximated
by;
⎛
Qgs2
Qgd
⎞ ⎛
⎞
+⎜I ×
× Vin × f ⎟ + ⎜ I ×
× Vin × f ⎟
ig
ig
⎝
⎠ ⎝
⎠
*
Ploss = Pconduction + Pdrive + Poutput
+ (Qg × Vg × f )
(
2
Ploss = Irms × Rds(on)
⎛Q
+ oss × Vin × f ⎞
⎝ 2
⎠
This simplified loss equation includes the terms Qgs2
and Qoss which are new to Power MOSFET data sheets.
Qgs2 is a sub element of traditional gate-source charge
that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub
elements, Qgs1 and Qgs2, can be seen from Fig 1.
Qgs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold voltage has been reached (t1) and the time the drain current rises to Idmax (t2) at which time the drain voltage
begins to change. Minimizing Qgs2 is a critical factor in
reducing switching losses in Q1.
Qoss is the charge that must be supplied to the output
capacitance of the MOSFET during every switching
cycle. Figure 2 shows how Qoss is formed by the parallel combination of the voltage dependant (non-linear)
capacitance’s Cds and Cdg when multiplied by the power
supply input buss voltage.
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1
t0
Power losses in the control switch Q1 are given by;
3
4
)
+ (Qg × Vg × f )
⎛Q
⎞
+ ⎜ oss × Vin × f + (Qrr × Vin × f )
⎝ 2
⎠
*dissipated primarily in Q1.
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IRF7807/ATRPbF-1
For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it
impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the control IC so the gate drive losses become much more
significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Qgd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.
Spice model for IRF7807 can be downloaded in machine readable format at www.irf.com.
Figure 2: Qoss Characteristic
Typical Mobile PC Application
The performance of these new devices has been tested
in circuit and correlates well with performance predictions generated by the system models. An advantage
of this new technology platform is that the MOSFETs
it produces are suitable for both control FET and synchronous FET applications. This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and
Fig 4). In these applications the same MOSFET IRF7807
was used for both the control FET (Q1) and the synchronous FET (Q2). This provides a highly effective
cost/performance solution.
3.3V Supply : Q1=Q2=IRF7807
5V Supply : Q1=Q2=IRF7807
93
95
92
94
90
Efficiency (%)
Efficiency (%)
91
89
88
87
Vin = 10V
86
92
91
Vin = 10V
Vin = 14V
85
93
90
Vin = 14V
Vin = 24V
84
Vin=24V
89
1
1.5
2
2.5
3
3.5
Load Current (A)
4
4.5
5
1
1.5
2
2.5
3
3.5
Load Current (A)
Figure 3
4
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4
4.5
Figure 4
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IRF7807/ATRPbF-1
Typical Characteristics
IRF7807
IRF7807A
Figure 5. Normalized On-Resistance vs. Temperature
Figure 6. Normalized On-Resistance vs. Temperature
Figure 7. Typical Gate Charge vs. Gate-to-Source Voltage
Figure 8. Typical Gate Charge vs. Gate-to-Source Voltage
Figure 9. Typical Rds(on) vs. Gate-to-Source Voltage
Figure 10. Typical Rds(on) vs. Gate-to-Source Voltage
5
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IRF7807/ATRPbF-1
IRF7807
IRF7807A
10
ISD , Reverse Drain Current (A)
ISD , Reverse Drain Current (A)
10
TJ = 150 ° C
1
TJ = 25 ° C
V GS = 0 V
0.1
0.4
0.5
0.6
0.7
0.8
TJ = 150 ° C
1
TJ = 25 ° C
V GS = 0 V
0.1
0.4
0.9
0.5
0.6
0.7
0.8
0.9
VSD ,Source-to-Drain Voltage (V)
VSD ,Source-to-Drain Voltage (V)
Figure 11. Typical Source-Drain Diode Forward Voltage
Figure 12. Typical Source-Drain Diode Forward Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
0.1
0.001
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Figure 13. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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IRF7807/ATRPbF-1
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
6
7
6
6X
2
3
4
e1
0.25 [.010]
.0688
1.35
1.75
MAX
A1 .0040
0.25
.0098
0.10
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BASIC
A
e
8X b
MIN
.0532
.013
H
1
MAX
b
5
0.25 [.010]
MILLIMETERS
MIN
A
E
INCHE S
DIM
B
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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IRF7807/ATRPbF-1
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRF7807/ATRPbF-1
†
Qualification information
Industrial
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
SO-8
RoHS compliant
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
10/16/2014
Comments
• Corrected part number from" IRF7807/APbF-1" to "IRF7807/ATRPbF-1" -all pages
• Removed the "IRF7807/APbF-1" bulk part number from ordering information on page1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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