TSSP4400
Vishay Telefunken
GaAs/GaAlAs Infrared Emitting Diode in Side View
Package
Description
TSSP4400 is a high intensity infrared emitting diode in
GaAlAs on GaAs technology, molded in a clear, blue–
grey tinted plastic package with spherical side view
lens. The device is spectrally matched to silicon photodiodes and phototransistors.
Features
D
D
D
D
D
D
High radiant power and high radiant intensity
Suitable for high pulse current operation
Low forward voltage
94 8491
Angle of half intensity ϕ = ± 22°
Peak wavelength lp = 925 nm
High reliability
Applications
High power infrared emitter in light curtains, light barriers, transmissive or reflective sensors in combination with
PIN photodiodes or phototransistors.
Infrared remote control and free air transmission systems for long transmission distance and medium wide angle
requirements in combination with PIN photo diodes or photo modules.
Suitable as replacement of CQX47.
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Document Number 81041
Rev. 3, 20-May-99
Test Conditions
tp/T = 0.5, tp = 100 ms
tp = 100 ms
t
x 5sec, 2 mm from case
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
100
200
2.0
170
100
–55...+100
–55...+100
260
450
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
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TSSP4400
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
g
Test Conditions
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 ms
IF = 100mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 ms
IF = 100 mA, tp = 20 ms
IF = 100 mA
Temp. Coefficient of VF
Reverse Current
Junction Capacitance
Radiant Intensity
y
Radiant Power
Temp. Coefficient of fe
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of lp
Rise Time
Symbol
VF
VF
TKVF
IR
Cj
Ie
Ie
Typ
1.3
2.4
–1.3
Max
1.8
3.2
100
30
23
300
18
–0.8
±22
925
50
0.2
800
500
800
500
10
fe
TKfe
ϕ
lp
Dl
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
IF = 100 mA
IF = 1.5 A
Fall Time
Min
TKlp
tr
tr
tf
tf
Unit
V
V
mV/K
mA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
125
IF – Forward Current ( mA )
PV – Power Dissipation ( mW )
250
200
150
RthJA
100
50
100
75
50
25
0
0
0
94 8029 e
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
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0
94 7941 e
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
Document Number 81041
Rev. 3, 20-May-99
TSSP4400
Vishay Telefunken
1000
I e – Radiant Intensity ( mW/sr )
I F – Forward Current ( A )
101
tp / T = 0.01, IFM = 2 A
0.02
100
0.05
0.1
0.2
100
10
1
0.5
10–1
10–2
94 7947 e
0.1
10–1
100
101
tp – Pulse Duration ( ms )
102
100
Figure 3. Pulse Forward Current vs. Pulse Duration
1000
Fe – Radiant Power ( mW )
IF – Forward Current ( mA )
104
Figure 6. Radiant Intensity vs. Forward Current
104
103
102
tp = 100 ms
tp / T = 0.001
101
100
100
10
1
0.1
0
1
2
4
3
VF – Forward Voltage ( V )
94 7952 e
100
101
102
103
IF – Forward Current ( mA )
94 7965 e
Figure 4. Forward Current vs. Forward Voltage
104
Figure 7. Radiant Power vs. Forward Current
1.2
1.6
1.1
1.2
IF = 10 mA
I e rel ; Fe rel
V Frel – Relative Forward Voltage
101
102
103
IF – Forward Current ( mA )
94 8189 e
1.0
IF = 20 mA
0.8
0.9
0.4
0.8
0.7
0
94 7990 e
20
40
60
80
Tamb – Ambient Temperature ( °C )
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
Document Number 81041
Rev. 3, 20-May-99
0
–10 0 10
100
94 7993 e
50
140
100
Tamb – Ambient Temperature ( °C )
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
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TSSP4400
Vishay Telefunken
0°
I e rel – Relative Radiant Intensity
Fe rel – Relative Radiant Power
1.25
1.0
0.75
0.5
0.25
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
IF = 100 mA
0
875
12757
925
975
l – Wavelength ( nm )
Figure 9. Relative Radiant Power vs. Wavelength
0.6
0.4
0.2
0
0.2
0.4
0.6
94 7966 e
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
Dimensions in mm
95 11325
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Document Number 81041
Rev. 3, 20-May-99
TSSP4400
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81041
Rev. 3, 20-May-99
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1