TQP7M9105
1W High Linearity Amplifier
RFMD + TriQuint = Qorvo
Applications






Repeaters
BTS Transceivers
BTS High Power Amplifiers
CDMA / WCDMA / LTE
ISM Equipment
General Purpose Wireless
3-pin SOT−89 Package
Product Features









Functional Block Diagram
50 – 1500 MHz
+30 dBm P1dB at 940 MHz
+47 dBm Output IP3 at 940 MHz
19.5 dB Gain at 940 MHz
+5 V Single Supply, 220 mA Current
Internal RF Overdrive Protection
Internal DC Overvoltage Protection
On Chip ESD Protection
SOT-89 Package
Backside Paddle - GND
General Description
1
2
RF IN
GND
3
RF OUT / VCC
Pin Configuration
The TQP7M9105 is a high linearity, high gain 1 W driver
amplifier in industry standard, RoHS compliant, SOT-89
surface mount package. This InGaP / GaAs HBT delivers
high performance across 0.05 to 1.5 GHz while
achieving +47 dBm OIP3 and +30 dBm P1dB at
940 MHz while only consuming 220 mA quiescent
current. All devices are 100% RF and DC tested.
Pin No.
Label
1
3
2
Backside Paddle
RF IN
RF OUT / Vcc
GND
GND
The TQP7M9105 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier has a dynamic active bias circuit that enable
stable operation over bias and temperature variations
and can provide a high linearity at back-off operation
The TQP7M9105 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. The device an
excellent candidate for transceiver line cards and high
power amplifiers in current and next generation multicarrier 3G / 4G base stations.
Ordering Information
Part No.
Description
TQP7M9105
1 W High Linearity Amplifier
TQP7M9105-PCB900 860 – 960 MHz tuned EVB
Standard T/R size = 1000 pieces on a 7” reel
Datasheet Rev. F 01-26-16
© 2016 TriQuint Semiconductor, Inc
- 1 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
TQP7M9105
1W High Linearity Amplifier
RFMD + TriQuint = Qorvo
Absolute Maximum Ratings
Parameter
Recommended Operating Conditions
Rating
Storage Temperature
RF Input Power, CW, 50 Ω, T=+25 °C
Device Voltage (VCC)
Parameter
−65 to 150 °C
+30 dBm
+8 V
Min
Device Voltage (VCC)
TCASE
Tj for >106 hours MTTF
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Typ
Max Units
+5.0
+5.25
+105
+170
−40
V
°C
°C
Electrical performance is measured under conditions noted in
the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: VCC =+5 V, T= +25 °C, 50 Ω system, tuned application circuit
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
WCDMA Output Power (1)
Noise Figure
Quiescent Current, ICQ
Thermal Resistance, θjc
Conditions
Min
Typ
50
17.5
Pout = +15 dBm / tone, ∆f = 1 MHz
At −50 dBc ACLR +28.7
+43.5
195
Module (junction to case)
940
19.4
14
15
+30
+47
+20.5
6.3
220
27.3
Max
Units
1500
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
°C / W
20.5
245
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.
Datasheet Rev. F 01-26-16
© 2016 TriQuint Semiconductor, Inc
- 2 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
TQP7M9105
1W High Linearity Amplifier
RFMD + TriQuint = Qorvo
Device Characterization Data
25
Gain (dB)
Input reflection coefficients
Gain & Max Stable Gain
30
Output reflection coefficients
1
Gain
Gmax
20
15
1
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
-1
-0.75 -0.5 -0.25
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0
0.25
0.5
0.75
1
-1
-0.75
-0.5
-0.25
0
-0.2
-0.2
-0.4
-0.4
-0.6
-0.6
-0.8
-0.8
-1
-1
0.25
0.5
0.75
1
Frequency (GHz)
Notes:
1. The gain for the unmatched device in 50 ohm system is shown as the trace in black color, [gain (S(21)]. For a tuned circuit at a
particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is
shown as the blue trace [Gain (MAX)]. The impedance plots are shown from 0.01 – 6 GHz.
S-Parameters
Test Conditions: VCC=+5 V, ICQ=220 mA, T=+25 °C, unmatched 50 ohm system, calibrated to device leads
Freq (GHz)
0.05
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
S11 (dB)
−1.06
−1.08
−1.01
−0.75
−0.57
−0.51
−0.51
−0.54
−0.57
−0.62
−0.66
−0.60
−0.56
−0.75
−0.58
−0.55
−0.64
−0.69
−0.84
−0.93
−0.85
−0.80
S11 (ang)
−178.68
−179.98
179.18
176.01
171.34
166.55
163.55
161.26
157.96
154.88
150.04
144.26
139.27
135.92
132.79
132.30
129.89
126.19
121.41
115.44
110.18
106.76
Datasheet Rev. F 01-26-16
© 2016 TriQuint Semiconductor, Inc
S21 (dB)
17.88
16.04
15.20
14.04
12.73
11.29
10.11
8.87
7.85
7.10
6.35
5.75
4.95
3.91
3.16
2.52
2.01
1.69
1.48
1.06
0.51
−0.04
S21 (ang)
154.59
154.96
150.91
134.55
120.33
108.35
98.59
90.63
82.50
75.78
67.47
59.82
51.93
45.80
40.57
36.55
31.75
26.65
20.86
12.97
5.81
−0.51
- 3 of 11 -
S12 (dB)
−36.95
−37.20
−37.52
−36.48
−35.65
−35.14
−34.89
−34.56
−34.07
−33.47
−33.19
−32.84
−32.47
−32.62
−32.36
−32.25
−31.94
−31.44
−30.84
−30.84
−30.20
−30.40
S12 (ang)
1.89
3.77
7.85
11.27
11.92
9.35
11.74
11.00
10.99
10.29
11.13
4.95
3.98
1.55
2.07
2.62
0.51
1.40
−2.57
−4.71
−10.30
−11.85
S22 (dB)
−3.39
−3.00
−2.91
−2.73
−2.52
−2.51
−2.50
−2.52
−2.61
−2.57
−2.66
−2.64
−2.59
−2.57
−2.28
−2.33
−2.37
−2.40
−2.54
−2.68
−2.63
−2.51
S22 (ang)
−171.92
−176.29
−179.66
176.91
173.48
169.15
165.78
163.07
160.70
158.17
155.39
151.03
146.61
141.55
139.39
138.20
136.78
135.83
133.06
126.60
119.65
114.02
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
TQP7M9105
1W High Linearity Amplifier
RFMD + TriQuint = Qorvo
Application Circuit 860 – 960 MHz (TQP7M9105-PCB900)
C5
J4
1.0uF
J3
C5
C4
C4
J3 Vcc
0.1uF
C3
C3
J4 GND
L1
U1
L2
C8
R1
C7
C6
C1
1000pF
C2
L1
10nH
0805
J1
C1
R1
1
L2
U1
TQP7M9105
RF
Input
3.3pF
1
2,4
C6
C2
3
4.7pF
2.2nH
C7
C8
1.5pF
4.7pF
J2
100pF RF
Output
Notes:
1. See Evaluation Board PCB Information section for PCB material and stack-up.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The recommended component values are dependent upon the frequency of operation.
4. All components are of 0603 size unless stated on the schematic.
5. Critical component placement locations:
Distance from U1 Pin 1 Pad (left edge) to R1 (right edge): 100 Mils (4.85° at 940 MHz)
Distance from U1 Pin 1 Pad (left edge) to C6 (right edge): 270 Mils (13.1° at 940 MHz)
Distance from U1 Pin 3 Pad (right edge) to C7 (left edge): 40 Mils (1.94° at 940 MHz)
Distance from U1 Pin 3 Pad (right edge) to L2 (left edge): 120 Mils (5.82° at 940 MHz)
Distance from U1 Pin 3 Pad (right edge) to C8 (left edge): 260 Mils (12.6° at 940 MHz)
Bill of Material − TQP7M9105-PCB900
Reference Des.
Value
Description
Manuf.
Part Number
n/a
U1
C1
C2
C3
C4
C5
C7
C6, C8
L1
L2
R1
n/a
n/a
3.3 pF
100 pF
1000 pF
0.1 μF
1.0 μF
1.5 pF
4.7 pF
10 nH
2.2 nH
1 Ω
Printed Circuit Board
TQP7M9105 Amplifier, SOT-89 pkg.
Cap., Chip, 0603, ±0.1 pF, 50 V, Accu-P
Cap., Chip, 0603, 5%, 50 V, NPO/COG
Cap., Chip, 0603, 5%, 50 V, NPO/COG
Cap., Chip, 0603, 10%, 16 V, X7R
Cap., Chip, 0603, 10%, 10 V, X5R
Cap., Chip, 0603, ±0.05 pF, 50 V, Accu-P
Cap., Chip, 0603, ±0.05 pF, 50 V, Accu-P
Inductor, 0805, 5%, Coilcraft CS Series
Inductor, 0603, ±0.3 nH
Resistor, Chip, 0603, 5%, 1/16 W
Qorvo
Qorvo
AVX
various
various
various
various
AVX
AVX
Coilcraft
Toko
various
1080068
1077953
06035J3R3ABSTR
Datasheet Rev. F 01-26-16
© 2016 TriQuint Semiconductor, Inc
- 4 of 11 -
06035J1R5ABSTR
06035J4R7ABSTR
0805CS-100XJLB
LL1608-FSL2N2S
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
TQP7M9105
1W High Linearity Amplifier
RFMD + TriQuint = Qorvo
Typical Performance: 860 – 960 MHz (TQP7M9105-PCB900)
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 220 mA, Temp. = +25 °C
Parameter
Units
Typical Value
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB Output IP3 (1)
WCDMA Channel Power (2,3)
Noise figure
860
18.9
7.9
16.2
+29
+48
20
6.8
880
19.2
9.5
16.7
+29.2
+50.2
20.2
6.6
900
19.3
11.3
16.8
+29.5
+50.6
20.5
6.4
920
19.4
13
15
+29.9
+49.5
+20.5
6.4
940
19.4
14
15
+30.0
+49.2
+20.5
6.4
960
19.3
13
14
+29.8
+49
+20.5
6.3
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Notes:
1. +15 dBm/tone, ∆f = 1 MHz
2. At −50 dBc ACLR
3. 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots: 860 – 960 MHz (TQP7M9105-PCB900)
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Gain vs. Frequency
22
0
Input Return Loss vs. Frequency
- 40°C
+25°C
+85°C
Return Loss (dB)
Gain (dB)
21
20
19
- 40°C
+25°C
+85°C
18
17
0.86
0.88
0.90
0.92
0.94
0.96
-5
-10
-15
-20
0.86
0.88
Frequency (GHz)
Return Loss (dB)
0
0.90
0.92
0.94
0.96
Frequency (GHz)
Output Return Loss vs. Frequency
-5
- 40°C
+25°C
+85°C
-10
-15
-20
0.86
0.88
0.90
0.92
0.94
0.96
Frequency (GHz)
Datasheet Rev. F 01-26-16
© 2016 TriQuint Semiconductor, Inc
- 5 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
TQP7M9105
1W High Linearity Amplifier
RFMD + TriQuint = Qorvo
Performance Plots: 860 – 960 MHz (TQP7M9105-PCB900)
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
ACLR vs. Output Power vs. Frequency
-45
Temp.=+25 C
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
-50
-50
ACLR (dBm)
ACLR (dBm)
ACLR vs. Output Power at 940MHz
-45
o
-55
860 MHz
880 MHz
900 MHz
920 MHz
940 MHz
960 MHz
-60
Frequency : 940 MHz
-55
-60
-65
-65
16
17
18
19
20
21
16
17
18
Output Power (dBm)
Temp.=+25oC
19
20
OIP3 vs. Output Power at 940MHz
55
1MHz Tone Spacing
1MHz Tone Spacing
50
OIP3 (dBm)
50
45
860 MHz
880 MHz
900 MHz
920 MHz
940 MHz
960 MHz
40
35
45
40
- 40 °C
+25°C
+85 °C
35
30
30
12
13
14
15
16
17
18
12
13
Output Power / Tone(dBm)
14
15
16
17
18
Output Power / Tone(dBm)
P1dB vs. Temperature
33
Icc vs. Output Power
600
Temp.=+25oC
Frequency : 940 MHz CW Signal
500
31
400
29
Icc (mA)
P1dB (dBm)
21
Output Power (dBm)
OIP3 vs. Output Power vs. Frequency
55
OIP3 (dBm)
- 40 °C
+25°C
+85 °C
300
27
+85°C
+25°C
−40°C
25
200
100
23
0
860
880
900
920
940
960
Frequency (MHz)
Datasheet Rev. F 01-26-16
© 2016 TriQuint Semiconductor, Inc
21
23
25
27
29
31
Output Power (dBm)
- 6 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
TQP7M9105
1W High Linearity Amplifier
RFMD + TriQuint = Qorvo
Evaluation Board – 700 – 1000 MHz Reference Design
C9
J4
J3
1.0uF
C8
C9
J3 Vcc
C8
0.1uF
C7
C7
L1
J4 GND
U1
R1
C4
C2
C5
C1
J1
J2
C6
22pF
L1
18nH
J1
C5
R1
U1
1
TQP7M9105
RF
Input
100pF
2.4 
C1
C2
3.9pF
5.6pF
2,4
C6
J2
100pF
RF
Output
3
C4
5.6pF
Notes:
1.
2.
3.
4.
Components shown on the silkscreen but not on the schematic are not used.
All components are of 0603 size unless stated on the schematic.
The recommended component values are dependent upon the frequency of operation.
Critical component placement locations:
 Distance between U1 Pin 1 Pad to R1 (right edge): 45 mil
 Distance between U1 Pin 1 Pad to C1 (right edge): 370 mil
 Distance between U1 Pin 1 Pad to C2 (right edge): 195 mil
 Distance between U1 Pin 3 Pad to C4 (left edge): 395 mil
Bill of Material – 700 – 1000 MHz
Reference Des.
Value
Description
Manuf.
Part Number
n/a
n/a
Printed Circuit Board
Qorvo
1100415
U1
n/a
1 W High Linearity Amplifier
Qorvo
TQP7M9105
C1
3.9 pF
CAP, 0603, ± 0.1 pF, 100V, NPO/COG
AVX
06035J3R9ABSTR
C2, C4
5.6 pF
CAP, 0603, ± 0.1 pF, 100V, NPO/COG
AVX
06035J5R6ABSTR
C5, C6
100 pF
CAP, 0603, 5%, 50V, NPO/COG
various
C7
22 pF
CAP, 0603, 5%, 50V, NPO/COG
Various
C8
0.1 uF
CAP, 0603, 5%, 50V, NPO/COG
various
C9
1.0 uF
CAP, 0603, 10%, X5R , 10V
various
R1
2.4 Ω
RES, 0603, 5%, 1/16W, Chip
various
L1
18 nH
IND, 0805, 5%, Ceramic
Coilcraft
Datasheet Rev. F 01-26-16
© 2016 TriQuint Semiconductor, Inc
- 7 of 11 -
0805CS-180XJL
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
TQP7M9105
1W High Linearity Amplifier
RFMD + TriQuint = Qorvo
Typical Performance 700 – 1000 MHz
Test Conditions: VCC=+5 V, Temp.=+25°C, 50Ω System
Parameter
Typical Value
Conditions
Units
Frequency
700
800
900
1000
MHz
Gain
17.2
17.9
18
16.9
dB
Input Return Loss
7.7
13.3
15.3
7.8
dB
Output Return Loss
8.5
10.9
14
15.7
dB
+28.5
+29.5
+30.5
+30.5
dBm
+45
+47
+44
+42.6
dBm
Output P1dB
Pout= +15 dBm/tone, f= 1 MHz
Output IP3
Quiescent Collector Current, ICQ
225
mA
Performance Plots – 700 – 1000 MHz
Gain vs. Frequency
20
Return Loss vs. Frequency
0
OIP3 vs Pout/tone
55
19
18
17
50
OIP3 (dBm)
Return Loss (dB)
Gain (dB)
-5
-10
-15
45
700 MHz
40
16
800 MHz
900 MHz
Input Return Loss
1000 MHz
Output return Loss
15
-20
700
800
900
Frequency (MHz)
Datasheet Rev. F 01-26-16
© 2016 TriQuint Semiconductor, Inc
1000
35
700
800
900
Frequency (MHz)
- 8 of 11 -
1000
9
10
11
12
13
14
15
16
17
18
19
Pout/tone (dBm)
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
TQP7M9105
1W High Linearity Amplifier
RFMD + TriQuint = Qorvo
Pin Configuration and Description
Backside Paddle - GND
Pin No.
Label
1
RF IN
2, Backside Paddle
GND
3
RF OUT / Vcc
1
2
RF IN
GND
3
RF OUT / VCC
Description
RF Input. Requires external match for optimal performance. External DC
Block required.
RF/DC ground. Use recommended via pattern to minimize inductance and
thermal resistance. See PCB Mounting Pattern for suggested footprint.
RF Output. Requires external match for optimal performance. External DC
Block and supply voltage is required.
Evaluation Board PCB Information
Qorvo PCB 1080068 Material and Stack-up
1 oz. Cu top layer
0.014"
Nelco N-4000-13
1 oz. Cu inner layer
0.062" ± 0.006"
Finished Board
Thickness
Core
1 oz. Cu inner layer
0.014"
Nelco N-4000-13
1 oz. Cu bottom layer
50 ohm line dimensions: width = .031”, spacing = .035”.
Datasheet Rev. F 01-26-16
© 2016 TriQuint Semiconductor, Inc
- 9 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
TQP7M9105
1W High Linearity Amplifier
RFMD + TriQuint = Qorvo
Package Marking and Dimensions
Package Marking
Product Identifier
Lot Code
7M9105
YXXX
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Dimension and tolerance formats conform to ASME Y14.4M-1994.
3. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012.
4. Contact plating: NiPdAu
PCB Mounting Pattern
3.86 [0.152]
29X
3
1.26 [0.050]
0.63 [0.025]
0.76 [0.030]
4.50 [0.177]
Ø.254 (.010) PLATED THRU VIA HOLES
PACKAGE OUTLINE
2X 1.27 [0.050]
2X 0.58 [0.023]
2.65 [0.104]
2X 0.86 [0.034]
0.64 [0.025]
0.86 [0.034]
3.86 [0.152]
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Use 1 oz. copper minimum for top and bottom layer metal.
3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation.
4. Do not remove or minimize via hole structure in the PCB. Thermal and RF grounding is critical.
5. We recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25 mm (0.10”).
6. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.
Datasheet Rev. F 01-26-16
© 2016 TriQuint Semiconductor, Inc
- 10 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
TQP7M9105
1W High Linearity Amplifier
RFMD + TriQuint = Qorvo
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with both lead-free (260°C maximum reflow
temperature) and tin/lead (245°C maximum reflow
temperature) soldering processes.
Caution! ESD-Sensitive Device
Contact plating: NiPdAu
ESD Rating:
Value:
Test:
Standard:
Class 1C
≥ 1000 V to < 2000 V
Human Body Model (HBM)
ESDA/JEDEC Standard JS-001-2012
ESD Rating:
Value:
Test:
Standard:
Class C3
≥ 1000 V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101F
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free
MSL Rating
MSL Rating: Level 1
Test: 260°C convection reflow
Standard: JEDEC Standard IPC/JEDEC J-STD-020
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.triquint.com
Email: customer.support@qorvo.com
Tel: 877-800-8584
For information about the merger of RFMD and TriQuint as Qorvo:
Web:
www.qorvo.com
For technical questions and application information:
Email: sjcapplications.engineering@qorvo.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Datasheet Rev. F 01-26-16
© 2016 TriQuint Semiconductor, Inc
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Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com