VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series
www.vishay.com
Vishay Semiconductors
参考資料
High Voltage, Input Rectifier Diode, 20 A
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
2
• Designed and
JEDEC®-JESD47
2
1
to
• UL E78996 approved
3
TO-220 FULL-PAK
according
• Fully isolated package (VINS = 2500 VRMS)
3
1
qualified
Cathode
Available
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
Anode
APPLICATIONS
PRODUCT SUMMARY
Package
TO-220FP
IF(AV)
20 A
VR
800 V to 1200 V
VF at IF
1.1 V
IFSM
300 A
TJ max.
150 °C
Diode variation
Single die
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
18
22
A
Capacitive input filter TA = 55 °C, TJ = 125 °C 
common heatsink of 1 °C/W
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Sinusoidal waveform
VRRM
Range
IFSM
VF
10 A, TJ = 25 °C
TJ
VALUES
UNITS
20
A
800/1200
V
300
A
1.0
V
-40 to 150
°C
VOLTAGE RATINGS
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
VS-20ETS08FPPbF, VS-20ETS08FP-M3
800
900
VS-20ETS12FPPbF, VS-20ETS12FP-M3
1200
1300
PART NUMBER
IRRM
AT 150 °C
mA
1
Revision: 19-Dec-13
Document Number: 94339
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series
www.vishay.com
Vishay Semiconductors
参考資料
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IF(AV)
Maximum average forward current
Maximum peak one cycle 
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2 t
Maximum I2t for fusing
I2t
TEST CONDITIONS
VALUES
TC = 51 °C, 180° conduction half sine wave
20
10 ms sine pulse, rated VRRM applied
250
UNITS
A
10 ms sine pulse, no voltage reapplied
300
10 ms sine pulse, rated VRRM applied
316
10 ms sine pulse, no voltage reapplied
442
t = 0.1 ms to 10 ms, no voltage reapplied
4420
A2s
VALUES
UNITS
A2s
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
VFM
Maximum forward voltage drop
rt
Forward slope resistance
VF(TO)
Threshold voltage
IRM
Maximum reverse leakage current
TEST CONDITIONS
20 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
VR = Rated VRRM
TJ = 150 °C
1.1
V
10.4
m
0.85
V
0.1
1.0
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance, 
junction to case
RthJC
Maximum thermal resistance, 
junction to ambient
RthJA
Typical thermal resistance, 
case to heatsink
RthCS
DC operation
Marking device
UNITS
°C
2.8
62
Mounting surface, smooth and greased
°C/W
0.5
2
g
0.07
oz.
minimum
6.0 (5.0)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
VALUES
-40 to 150
Case style TO-220 FULL-PAK (94/V0)
20ETS08FP
20ETS12FP
Revision: 19-Dec-13
Document Number: 94339
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series
www.vishay.com
35
150
Maximum Average Forward
Power Loss (W)
VS-20ETS.. Series
Maximum Allowable Case
Temperature (°C)
Vishay Semiconductors
参考資料
125
100
Ø
Conduction angle
180°
120°
90°
60°
30°
75
50
DC
180°
120°
90°
60°
30°
30
25
20
RMS limit
15
Ø
10
Conduction period
5
VS-20ETS.. Series
TJ = 150 °C
0
25
0
4
8
12
16
20
0
24
Maximum Allowable Case
Temperature (°C)
150
VS-20ETS.. Series
125
Ø
Conduction period
360°
180°
120°
90°
60°
30°
50
25
0
5
10
15
20
25
30
35
Maximum Average Forward
Power Loss (W)
25
20
RMS limit
15
10
Ø
Conduction angle
VS-20ETS.. Series
TJ = 150 °C
5
0
0
4
8
12
16
20
25
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
250
200
150
100
VS-20ETS.. Series
50
1
10
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
24
Peak Half Sine Wave Forward Current (A)
Fig. 2 - Current Rating Characteristics
180°
120°
90°
60°
30°
20
300
Average Forward Current (A)
30
15
Fig. 4 - Forward Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
Fig. 1 - Current Rating Characteristics
75
10
Average Forward Current (A)
Average Forward Current (A)
100
5
300
250
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
200
150
100
VS-20ETS.. Series
50
0.01
0.1
1
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 19-Dec-13
Document Number: 94339
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series
www.vishay.com
Vishay Semiconductors
参考資料
1000
IF - Instantaneous
Forward Current (A)
TJ = 25 °C
100
TJ = 150 °C
10
VS-20ETS.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
ZthJC - Transient Thermal
Impedance (°C/W)
10
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
(thermal resistance)
0.1
0.0001
0.001
0.01
0.1
VS-20ETS.. Series
1
10
100
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 19-Dec-13
Document Number: 94339
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series
www.vishay.com
Vishay Semiconductors
参考資料
ORDERING INFORMATION TABLE
Device code
VS-
20
E
T
S
12
FP
PbF
1
2
3
4
5
6
7
8
1
2
-
Vishay Semiconductors product
Current rating (20 = 20 A)
Circuit configuration:
E = Single diode
3
-
Package:
T = TO-220
4
-
Type of silicon:
S = Standard recovery rectifier
5
6
-
Voltage ratings
7
-
FULL-PAK
8
-
08 = 800 V
12 = 1200 V
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-20ETS08FPPbF
50
1000
Antistatic plastic tubes
VS-20ETS08FP-M3
50
1000
Antistatic plastic tubes
VS-20ETS12FPPbF
50
1000
Antistatic plastic tubes
VS-20ETS12FP-M3
50
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95005
TO-220 FP PbF
www.vishay.com/doc?95009
TO-220 FP -M3
www.vishay.com/doc?95440
Revision: 19-Dec-13
Document Number: 94339
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
参考資料
DIMENSIONS in millimeters
10.6
10.4
Hole Ø
3.4
3.1
2.8
2.6
3.7
3.2
7.31
6.91
16.0
15.8
16.4
15.4
10°
3.3
3.1
13.56
13.05
2.54 TYP.
0.9
0.7
0.61
0.38
2.54 TYP.
R 0.7
(2 places)
R 0.5
4.8
4.6
5° ± 0.5°
Revision: 20-Jul-11
5° ± 0.5°
1.4
1.3
2.85
2.65
1.15
TYP.
1.05
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220 FULL-PAK
Document Number: 95005
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000