Vol. 34, No. 12
Journal of Semiconductors
December 2013
DOI: 10.1088/1674-4926/34/12/129501
Journal of Semiconductors
Volume 34
2013
CONTENTS
INVITED PAPERS
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Solid State Physics View of Liquid State Chemistry — Electrical conduction in pure water (8 pages)
Jie Binbin and Sah Chihtang
SEMICONDUCTOR PHYSICS
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Properties of a polaron in a quantum dot: a squeezed-state variational approach (5 pages)
Yin Jiwen, Li Weiping, and Yu Yifu
Calculation of surface acoustic waves in a multilayered piezoelectric structure (6 pages)
Zhang Zuwei, Wen Zhiyu, and Hu Jing
Electronic structures and optical properties of a SiC nanotube with vacancy defects (5 pages)
Song Jiuxu, Yang Yintang, Wang Ping, Guo Lixin, and Zhang Zhiyong
Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor (5 pages)
Zhou Yu, Li Xinxing, Tan Renbing, Xue Wei, Huang Yongdan, Lou Shitao, Zhang Baoshun, and Qin Hua
Effects of interaction between defects on the uniformity of doping HfO2 -based RRAM: a first principle study
(6 pages)
Zhao Qiang, Zhou Maoxiu, Zhang Wei, Liu Qi, Li Xiaofeng, Liu Ming, and Dai Yuehua
Optical properties of GaAs (5 pages)
J. O. Akinlami and A. O. Ashamu
One-phonon resonant electron Raman scattering in multilayer coaxial cylindrical Alx Ga1 x As/GaAs quantum
cables (6 pages)
Zhong Qinghu, Yi Xuehua, Pu Shouliang, and Yan Yuzhen
Magnetic field and temperature dependence of the properties of the ground state of the strong-coupling bound
magnetopolaron in quantum rods with hydrogenic impurity (6 pages)
Xin Wei, Zhao Yuwei, Han Chao, and Eerdunchaolu
Extraction of interface state density and resistivity of suspended p-type silicon nanobridges (6 pages)
Zhang Jiahong, Liu Qingquan, Ge Yixian, Gu Fang, Li Min, Mao Xiaoli, and Cao Hongxia
The impact of germanium in strained Si/relaxed Si1 x Gex on carrier performance in non-degenerate and degenerate regimes (4 pages)
EngSiew Kang, S Anwar, M T Ahmadi, and Razali Ismail
First principles study on the surface- and orientation-dependent electronic structure of a WO3 nanowire
(6 pages)
Qin Yuxiang, Hua Deyan, and Li Xiao
The effect of InAs quantum-dot size and interdot distance on GaInP/GaAs/GaInAs/Ge multi-junction tandem
solar cells (5 pages)
Qu Xiaosheng, Zhang Sisi, Bao Hongyin, and Xiong Liling
Effect of p–d exchange with an itinerant carrier in a GaMnAs quantum dot (6 pages)
D. Lalitha and A. John Peter
Inter valley phonon scattering mechanism in strained Si/(101)Si1 x Gex (4 pages)
Jin Zhao, Qiao Liping, Liu Ce, Guo Chen, Liu Lidong, and Wang Jiang’an
Density functional theory studies of the optical properties of a ˇ-FeSi2 (100)/Si (001) interface at high pressure
(4 pages)
Li Haitao, Qian Jun, Han Fangfang, and Li Tinghui
Interface roughness scattering in an AlGaAs/GaAs triangle quantum well and square quantum well (4 pages)
Jin Xiao, Zhang Hong, Zhou Rongxiu, and Jin Zhao
Spray pyrolysis of tin selenide thin-film semiconductors: the effect of selenium concentration on the properties
of the thin films (7 pages)
M. R. Fadavieslam and M. M. Bagheri-Mohagheghi
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Nano inhomogeneity effects on small Ag/n-Si Schottky diode parameters at high temperature (7 pages)
M. A.Yeganeh, R. K. Mamedov, and A. J. Novinrooz
Averaged hole mobility model of biaxially strained Si (4 pages)
Song Jianjun, Zhu He, Yang Jinyong, Zhang Heming, Xuan Rongxi, and Hu Huiyong
Effect of temperature on the intensity and carrier lifetime of an AlGaAs based red light emitting diode (5 pages)
P. Dalapati, N. B. Manik, and A. N. Basu
Comparison of band-to-band tunneling models in Si and Si–Ge junctions (5 pages)
Jiao Yipeng, Wei Kangliang, Wang Taihuan, Du Gang, and Liu Xiaoyan
Transverse Stark effect in the optical absorption in a square semiconducting quantum wire (7 pages)
Wang Sheng, Kang Yun, and Han Chunjie
AC-electronic and dielectric properties of semiconducting phthalocyanine compounds: a comparative study
(6 pages)
Safa’a M. Hraibat, Rushdi M-L. Kitaneh, Mohammad M. Abu- Samreh, and Abdelkarim M. Saleh
Influence of an anisotropic parabolic potential on the quantum dot qubit (4 pages)
Zhao Cuilan, Cai Chunyu, and Xiao Jinglin
Influence of incident angle on the defect mode of locally doped photonic crystal (4 pages)
Wang Jin, Wen Tingdun, Xu Liping, and Liu Zufan
Transition Gibbs free energy level cross section and formulation of carrier SRH recombination rate (4 pages)
Ken K. Chin
Electron Raman scattering in a HgS/CdS spherical quantum dot quantum well (4 pages)
Zhong Qinghu and Lai Liping
Giant in-plane optical anisotropy of a-plane ZnO on r-plane sapphire (4 pages)
Wu Shujie, Chen Yonghai, Qin Xudong, Gao Hansong, Yu Jinling, Zhu Laipan, Li Yuan, and Shi Kai
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Ultrasonic spray pyrolysis deposition of SnSe and SnSe2 using a single spray solution (4 pages)
Jorge Sergio Narro-Rios, Manoj Ramachandran, Dalia Martínez-Escobar, and Aarón Sánchez-Juárez
First-principles calculation on the concentration of intrinsic defects in 4H-SiC (4 pages)
Cheng Ping, Zhang Yuming, and Zhang Yimen
Cu doped AlSb polycrystalline thin films (3 pages)
Wu Lili, Jin Shuo, Zeng Guanggen, Zhang Jingquan, Li Wei, Feng Lianghuan, Li Bing, and Wang Wenwu
Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films (4 pages)
Said Benramache, Foued Chabane, Boubaker Benhaoua, and Fatima Z. Lemmadi
Effect of Sn-doping on the structural, electrical and magnetic properties of (In0:95 x Snx Fe0:05 )2 O3 films
(4 pages)
Xing Pengfei, Chen Yanxue, and Sun Shaohua
Photoconductivity and surface chemical analysis of ZnO thin films deposited by solution-processing techniques
for nano and microstructure fabrication (5 pages)
V. K. Dwivedi, P. Srivastava, and G. Vijaya Prakash
Te vapor annealing of indium-doped CdMnTe crystals (4 pages)
Zhang Jijun, Wang Linjun, Min Jiahua, Qin Kaifeng, Shi Zhubin, and Liang Xiaoyan
Elaboration and characterization of a KCl single crystal doped with nanocrystals of a Sb2 O3 semiconductor
(4 pages)
L. Bouhdjer, S. Addala, A. Chala, O. Halimi, B. Boudine, and M. Sebais
Solar light assisted photocatalysis of water using a zinc oxide semiconductor (4 pages)
S. S. Shinde, C. H. Bhosale, and K. Y. Rajpure
Defects in CdMnTe crystals for nuclear detector applications (5 pages)
Du Yuanyuan, Jie Wanqi, Xu Yadong, Zheng Xin, Wang Tao, and Yu Hui
Photoelectrocatrocatalytic hydrolysis of starch by using sprayed ZnO thin films (3 pages)
R. T. Sapkal, S. S. Shinde, K.Y. Rajpure, and C. H. Bhosale
Structural and magnetic properties of Yb-implanted GaN (4 pages)
Yin Chunhai, Liu Chao, Tao Dongyan, and Zeng Yiping
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Influence of substrate temperature on the structural and properties of In-doped CdO films prepared by PLD
(6 pages)
Zheng Biju and Hu Wen
The effect of ı-doping and modulation-doping on Si-doped high Al content n-Alx Ga1 x N grown by MOCVD
(3 pages)
Zhu Shaoxin, Yan Jianchang, Zeng Jianping, Zhang Ning, Si Zhao, Dong Peng, Li Jinmin, and Wang Junxi
ZnO nanoparticles as a luminescent down-shifting layer for photosensitive devices (6 pages)
Zhu Yao, A. Apostoluk, Liu Shibin, S. Daniele, and B. Masenelli
Preparation of GaN-on-Si based thin-film flip-chip LEDs (3 pages)
Zhang Shaohua, Feng Bo, Sun Qian, and Zhao Hanmin
Thermal analysis of remote phosphor in LED modules (3 pages)
Dong Mingzhi, Wei Jia, Ye Huaiyu, Yuan Cadmus, and Zhang Kouchi
Optical simulation of phosphor layer of white LEDs (5 pages)
Liao Junyuan, Rao Haibo, Wang Wei, Wan Xianlong, Zhou Linsong, Zhou Da, Wang Xuemei, and Lei Qiaolin
Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by
pulsed laser melting (5 pages)
Wang Xiyuan, Huang Yongguang, Liu Dewei, Zhu Xiaoning, Cui Xiao, and Zhu Hongliang
Controlled growth of well-aligned ZnO nanowire arrays using the improved hydrothermal method (6 pages)
Han Zhitao, Li Sisi, Chu Jinkui, and Chen Yong
The effects of cure temperature history on the stability of polyimide films (5 pages)
Ning Wenguo, Li Heng, Zhu Chunsheng, Luo Le, Chen Dong, and Duan Zhenzhen
Development of aluminum-doped ZnO films for a-Si:H/c-Si:H solar cell applications (6 pages)
Lei Zhifang, Chen Guangyu, Gu Shibin, Dai Lingling, Yang Rong, Meng Yuan, Guo Ted, and Li Liwei
Numerical study of heat transport and fluid flow during the silicon crystal growth process by the Czochralski
method (6 pages)
Jin Chaohua
Characterization of CdMnTe radiation detectors using current and charge transients (7 pages)
R. Rafiei, M. I. Reinhard, A. Sarbutt, S. Uxa, D. Boardman, G. C. Watt, E. Belas, K. Kim, A. E. Bolotnikov,
and R. B. James
Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique
(5 pages)
Abdelouahab Gahtar, Said Benramache, Boubaker Benhaoua, and Foued Chabane
Effect of Fe-doping on the structural and optical properties of ZnO thin films prepared by spray pyrolysis
(6 pages)
S. M. Salaken, E. Farzana, and J. Podder
First-principle study on the electronic and optical properties of the anatase TiO2 (101) surface (5 pages)
Yang Ying, Feng Qing, Wang Weihua, and Wang Yin
InP-based Inx Ga1 x As metamorphic buffers with different mismatch grading rates (5 pages)
Fang Xiang, Gu Yi, Chen Xingyou, Zhou Li, Cao Yuanying, Li Haosibaiyin, and Zhang Yonggang
Large area graphene produced via the assistance of surface modification (5 pages)
Zhang Yang, Dou Wei, Luo Wei, Lu Weier, Xie Jing, Li Chaobo, and Xia Yang
The effect of annealing temperature and the characteristics of p–n junction diodes based on sprayed polyaniline/ZnO thin films (6 pages)
R. Suresh, V. Ponnuswamy, J. Chandrasekaran, D. Manoharan, and R. Mariappan
Preparation of n-type semiconductor SnO2 thin films (4 pages)
Achour Rahal, Said Benramache, and Boubaker Benhaoua
The structural and magnetic properties of Fe/(Ga, Mn)As heterostructures (4 pages)
Deng Jiajun, Chen Pei, Wang Wenjie, Hu Bing, Che Jiantao, Chen Lin, Wang Hailong, and Zhao Jianhua
Electronic structure and optical properties of a new type of semiconductor material: graphene monoxide
(5 pages)
Yang Gui, Zhang Yufeng, and Yan Xunwang
The impact of polishing on germanium-on-insulator substrates (5 pages)
Lin Wang, Ruan Yujiao, Chen Songyan, Li Cheng, Lai Hongkai, and Huang Wei
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The effects of electron irradiation on the optical properties of the organic semiconductor polypyrrole (5 pages)
J. V. Thombare, M. C. Rath, S. H. Han, and V. J. Fulari
Structural, morphological, dielectrical and magnetic properties of Mn substituted cobalt ferrite (5 pages)
S. P. Yadav, S. S. Shinde, A. A. Kadam, and K. Y. Rajpure
The effect of the film thickness and doping content of SnO2 :F thin films prepared by the ultrasonic spray method
(5 pages)
Achour Rahal, Said Benramache, and Boubaker Benhaoua
Parameters influencing the optical properties of SnS thin films (6 pages)
Priyal Jain and P. Arun
Persistent photoconductivity in neutron irradiated GaN (3 pages)
Zhang Minglan, Yang Ruixia, Liu Naixin, and Wang Xiaoliang
The effect of solution concentration on the physical and electrochemical properties of vanadium oxide films
deposited by spray pyrolysis (5 pages)
M. Mousavi, A. Kompany, N. Shahtahmasebi, and M. M. Bagheri-Mohagheghi
The influence of monomer concentration on the optical properties of electrochemically synthesized polypyrrole
thin films (6 pages)
J. V. Thombare, M. C. Rath, S. H. Han, and V. J. Fulari
The optical–electrical properties of doped ˇ-FeSi2 (7 pages)
Yan Wanjun, Zhang Chunhong, Zhang Zhongzheng, Xie Quan, Guo Benhua, and Zhou Shiyun
The effect of the multi-period on the properties of deep-ultraviolet transparent conductive Ga2 O3 /ITO alternating multilayer films (5 pages)
Xu Chengyang, Yan Jinliang, Li Chao, and Zhuang Huihui
Influence of co-precipitation of copper and nickel on the formation of a denuded zone in Czochralski silicon
(5 pages)
Ji Chuan, Zhang Guangchao, and Xu Jin
Reduced defect density in microcrystalline silicon by hydrogen plasma treatment (3 pages)
Li Jingyan, Zeng Xiangbo, Li Hao, Xie Xiaobing, Yang Ping, Xiao Haibo, Zhang Xiaodong, and Wang Qiming
Correlation between electrical conductivity–optical band gap energy and precursor molarities ultrasonic spray
deposition of ZnO thin films (5 pages)
Said Benramache, Okba Belahssen, Abderrazak Guettaf, and Ali Arif
The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD (5 pages)
Jing Liang, Xiao Hongling, Wang Xiaoliang, Wang Cuimei, Deng Qingwen, Li Zhidong, Ding Jieqin,
Wang Zhanguo, and Hou Xun
GaN nanopillars with a nickel nano-island mask (5 pages)
Lin Zengqin, Xiu Xiangqian, Zhang Shiying, Hua Xuemei, Xie Zili, Zhang Rong, Chen Peng, Han Ping,
Zheng Youdou
Ni(Pt) germanosilicide contacts formed on heavily boron doped Si1 x Gex substrates for Schottky source/drain
transistors (4 pages)
Xiang Wenfeng, Liu Kun, Zhao Kun, and Zhong Shouxian
SEMICONDUCTOR DEVICES
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Effect of tunneling current on the noise characteristics of a 4H-SiC Read Avalanche diode (5 pages)
Deepak K. Karan, Pranati Panda, and G. N. Dash
Analysis of the subthreshold characteristics of vertical tunneling field effect transistors (7 pages)
Han Zhongfang, Ru Guoping, and Ruan Gang
Capacitance and conductance dispersion in AlGaN/GaN heterostructure (4 pages)
Yan Dawei, Wang Fuxue, Zhu Zhaomin, Cheng Jianmin, and Gu Xiaofeng
Transconductance bimodal effect of PDSOI submicron H-gate MOSFETs (6 pages)
Mei Bo, Bi Jinshun, Bu Jianhui, and Han Zhengsheng
SPTC -IGBT characteristics and optimization (4 pages)
Chu Weili, Zhu Yangjun, Zhang Jie, and Hu Aibin
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Increasing substrate resistance to improve the turn-on uniformity of a high-voltage multi-finger GG-nLDMOS
(4 pages)
He Chuan, Jiang Lingli, Fan Hang, and Zhang Bo
A novel latch-up free SCR-LDMOS with high holding voltage for a power-rail ESD clamp (5 pages)
Pan Hongwei, Liu Siyang, and Sun Weifeng
Influence of Cux S back contact on CdTe thin film solar cells (3 pages)
Lei Zhi, Feng Lianghuan, Zeng Guanggen, Li Wei, Zhang Jingquan, Wu Lili, and Wang Wenwu
Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region
impact avalanche transit time device (12 pages)
Aritra Acharyya, Suranjana Banerjee, and J. P. Banerjee
Flicker and thermal noise in an n-channel underlap DG FinFET in a weak inversion region (6 pages)
Sudhansu Kumar Pati, Hemant Pardeshi, Godwin Raj, N Mohankumar, and Chandan Kumar Sarkar
Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs (4 pages)
Chen Wanjun, Zhang Jing, Zhang Bo, and Chen Kevin Jing
Analysis on the positive dependence of channel length on ESD failure current of a GGNMOS in a 5 V CMOS
(5 pages)
Wu Daoxun, Jiang Lingli, Fan Hang, Fang Jian, and Zhang Bo
A substrate-free optical readout focal plane array with a heat sink structure (6 pages)
Liu Ruiwen, Kong Yanmei, Jiao Binbin, Li Zhigang, Shang Haiping, Lu Dike, Gao Chaoqun, Chen Dapeng,
and Zhang Qingchuan
Development of a novel accelerometer based on an overlay detection bridge (8 pages)
Du Chunhui, He Changde, Ge Xiaoyang, Zhang Yongping, Yu Jiaqi, Song Xiaopeng, and Zhang Wendong
Nanoindentation on the doubler plane of KDP single crystal (5 pages)
Guo Xiaoguang, Zhang Xiaoji, Tang Xianzhao, Guo Dongming, Gao Hang, and Teng Xiaoji
Dynamic avalanche behavior of power MOSFETs and IGBTs under unclamped inductive switching conditions
(5 pages)
Lu Jiang, Tian Xiaoli, Lu Shuojin, Zhou Hongyu, Zhu Yangjun, and Han Zhengsheng
A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer (4 pages)
Zhao Qiuming, Li Qi, Tang Ning, and Li Yongchang
Simulation study on short channel double-gate junctionless field-effect transistors (8 pages)
Wu Meile, Jin Xiaoshi, Chuai Rongyan, Liu Xi, and Jong-Ho Lee
A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors (5 pages)
Wang Shuai, Li Ke, Jiang Yibo, Cong Mifang, Du Huan, and Han Zhengsheng
Research on the diamond MISFET (3 pages)
Zhou Jianjun, Bai Song, Kong Cen, Geng Xijiao, Lu Haiyan, Kong Yuechan, and Chen Tangsheng
The design and test of MEMS piezoresistive ultrasonic sensor arrays (7 pages)
Lian Deqin, He Changde, Zhang Hui, Yu Jiaqi, Yuan Kejing, and Xue Chenyang
Effects of seed layer on the performance of microcrystalline silicon germanium solar cells (5 pages)
Cao Yu, Zhang Jianjun, Li Tianwei, Huang Zhenhua, Ma Jun, Yang Xu, Ni Jian, Geng Xinhua, and Zhao Ying
Fabrication and characterization of a GaN/(4H)SiC vertical pn power diode using direct and interfaced
epitaxial-growth approaches (4 pages)
Bose Srikanta and Mazumder S K
A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nanoscale AlInGaN/AlN/GaN HEMT devices (6 pages)
Godwin Raj, Hemant Pardeshi, Sudhansu Kumar Pati, N Mohankumar, and Chandan Kumar Sarkar
A compact charge-based model to study the nanoscale undoped double gate MOSFETs for nanoelectronic circuit
design using genetic algorithms (7 pages)
T. Bendib, F. Djeffal, and D. Arar
Motion of current filaments in avalanching PIN diodes (5 pages)
Ren Xingrong, Chai Changchun, Ma Zhenyang, Yang Yintang, Qiao Liping, Shi Chunlei, and Ren Lihua
Influence of gate–source/drain misalignment on the performance of bulk FinFETs by a 3D full band Monte
Carlo simulation (4 pages)
Wang Juncheng, Du Gang, Wei Kangliang, Zeng Lang, Zhang Xing, and Liu Xiaoyan
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An extrinsic fmax > 100 GHz InAlN/GaN HEMT with AlGaN back barrier (4 pages)
Liu Bo, Feng Zhihong, Dun Shaobo, Zhang Xiongwen, Gu Guodong, Wang Yuangang, Xu Peng, He Zezhao,
and Cai Shujun
A 1.55-m laser array monolithically integrated with an MMI combiner (4 pages)
Ma Li, Zhu Hongliang, Liang Song, Wang Baojun, Zhang Can, Zhao Lingjuan, Bian Jing, and Chen Minghua
A high performance carrier stored trench bipolar transistor with a field-modified P-base region (6 pages)
Qi Yue, Wang Zhigang, Chen Wanjun, and Zhang Bo
The resonance frequency shift in an SOI nano-waveguide microring resonator (4 pages)
Zang Junbin, Xue Chenyang, Wei Liping, Liu Chao, Cui Danfeng, Wang Yonghua, and Zhang Wendong
On-current modeling of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profile
(8 pages)
Sarvesh Dubey, Pramod Kumar Tiwari, and S. Jit
Multi-LED package design, fabrication and thermal analysis (5 pages)
R. H. Poelma, S. Tarashioon, H. W. van Zeijl, S. Goldbach, J. L. J. Zijl, and G. Q. Zhang
Kirk effect and suppression for 20 V planar active-gap LDMOS (5 pages)
Nie Weidong, Yi Fayou, and Yu Zongguang
The effects of current density ratio and reflectivity on the gain, saturation and noise characteristics of a twosection MQW RSOA (4 pages)
Xi Huali, Huang Lirong, and Jiang Guiying
Optimization of the emitter region and the metal grid of a concentrator silicon solar cell (8 pages)
Xing Yupeng, Han Peide, Fan Yujie, Wang Shuai, Liang Peng, Ye Zhou, Hu Shaoxu, Li Xinyi, Lou Shishu,
Zhao Chunhua, and Mi Yanhong
A THz InGaAs/InP double heterojunction bipolar transistor with fmax D 325 GHz and BVCBO D 10.6 V
(3 pages)
Cheng Wei, Wang Yuan, Zhao Yan, Lu Haiyan, Gao Hanchao, and Yang Naibin
Field plate engineering for GaN-based Schottky barrier diodes (8 pages)
Lei Yong, Shi Hongbiao, Lu Hai, Chen Dunjun, Zhang Rong, and Zheng Youdou
Improvement of carrier distribution in dual wavelength light-emitting diodes (3 pages)
Si Zhao, Wei Tongbo, Zhang Ning, Ma Jun, Wang Junxi, and Li Jinmin
Analysis of incomplete charge transfer effects in a CMOS image sensor (6 pages)
Han Liqiang, Yao Suying, Xu Jiangtao, Xu Chao, and Gao Zhiyuan
Self-adaptive phosphor coating technology for wafer-level scale chip packaging (4 pages)
Zhou Linsong, Rao Haibo, Wang Wei, Wan Xianlong, Liao Junyuan, Wang Xuemei, Zhou Da, and Lei Qiaolin
Design and optimization of Ge profiles for improved thermal stability of SiGe HBTs (5 pages)
Fu Qiang, Zhang Wanrong, Jin Dongyue, Ding Chunbao, Zhao Yanxiao, and Zhang Yujie
Field plated 0.15 m GaN HEMTs for millimeter-wave application (5 pages)
Ren Chunjiang, Li Zhonghui, Yu Xuming, Wang Quanhui, Wang Wen, Chen Tangsheng, and Zhang Bin
Planar InP-based Schottky barrier diodes for terahertz applications (4 pages)
Zhou Jingtao, Yang Chengyue, Ge Ji, and Jin Zhi
Fabrication and characterization of an SOI MEMS gyroscope (5 pages)
Zhong Weiwei, Han Guowei, Si Chaowei, Ning Jin, and Yang Fuhua
Fabrication and field emission characteristics of a novel planar-gate electron source with patterned carbon
nanotubes for backlight units (5 pages)
Zhang Yongai, Lin Tihang, Zeng Xiangyao, Zhou Xiongtu, and Guo Tailiang
An analytical model of the electric field distributions of buried superjunction devices (4 pages)
Huang Haimeng and Chen Xingbi
A Verilog-A large signal model for InP DHBT including thermal effects (5 pages)
Shi Yuxia, Jin Zhi, Pan Zhijian, Su Yongbo, Cao Yuxiong, and Wang Yan
A low temperature processed Si-quantum-dot poly-Si TFT nonvolatile memory device (4 pages)
Sun Wei
Avalanche-enhanced photocurrents in pin silicon waveguides at 1550 nm wavelength (4 pages)
Zhao Yong, Xu Chao, Jiang Xiaoqing, and Ge Huiliang
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Accelerating the life of transistors (6 pages)
Qi Haochun, Lü Changzhi, Zhang Xiaoling, and Xie Xuesong
Modeling of cylindrical surrounding gate MOSFETs including the fringing field effects (6 pages)
Santosh K. Gupta and Srimanta Baishya
Facile synthesis of ZnO nanowires on FTO glass for dye-sensitized solar cells (5 pages)
Han Zhitao, Li Sisi, Li Junjun, Chu Jinkui, and Chen Yong
New expressions for non-punch-through and punch-through abrupt parallel-plane junctions based on
Chynoweth law (5 pages)
Huang Haimeng and Chen Xingbi
Fabrication research on the sandwich layered cathode electrode for a triode field emission display prototype
(6 pages)
Li Yukui, Li Xiaoquan, Liu Xinghui, Lu Wenke, and Zeng Fanguang
A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors (5 pages)
Yang Liyuan, Ai Shan, Chen Yonghe, Cao Mengyi, Zhang Kai, Ma Xiaohua, and Hao Yue
Analysis of OFF-state and ON-state performance in a silicon-on-insulator power MOSFET with a low-k dielectric trench (7 pages)
Wang Zhigang, Zhang Bo, and Li Zhaoji
The snap-back effect of an RC-IGBT and its simulations (5 pages)
Zhang Wenliang, Tian Xiaoli, Tan Jingfei, and Zhu Yangjun
Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under offstate stress (6 pages)
Zheng Qiwen, Yu Xuefeng, Cui Jiangwei, Guo Qi, Cong Zhongchao, Zhang Xingyao, Deng Wei, Zhang Xiaofu,
and Wu Zhengxin
A high voltage SOI pLDMOS with a partial interface equipotential floating buried layer (5 pages)
Wu Lijuan, Zhang Wentong, Zhang Bo, and Li Zhaoji
A low power discrete operation mode for punchthrough phototransistor (4 pages)
Zhou Quan, Guo Shuxu, Song Jingyi, Li Zhaohan, Du Guotong, and Chang Yuchun
Experimental investigation of limit space charge accumulation mode operation in a semi-insulating GaAs photoconductive semiconductor switch (5 pages)
Ma Xiangrong, Shi Wei, and Xiang Mei
Analysis of characteristics of vertical coupling microring resonator (5 pages)
Wang Yuhai, Qin Zhengkun, Wang Chunxu, and Wang Lizhong
Design and measurement of a piezoresistive ultrasonic sensor based on MEMS (7 pages)
Yu Jiaqi, He Changde, Yuan Kejing, Lian Deqin, Xue Chenyang, and Zhang Wendong
ANFIS-based approach to studying subthreshold behavior including the traps effect for nanoscale thin-film DG
MOSFETs (9 pages)
T. Bentrcia, F. Djeffal, and E. Chebaaki
Enhanced performance of C60 N-type organic field-effect transistors using a pentacene passivation layer
(4 pages)
Liang Xiaoyu, Cheng Xiaoman, Du Boqun, Bai Xiao, and Fan Jianfeng
The influence of RF power on the electrical properties of sputtered amorphous In–Ga–Zn–O thin films and
devices (5 pages)
Shi Junfei, Dong Chengyuan, Dai Wenjun, Wu Jie, Chen Yuting, and Zhan Runze
Stability analysis of a back-gate graphene transistor in air environment (4 pages)
Jia Kunpeng, Yang Jie, Su Yajuan, Nie Pengfei, Zhong Jian, Liang Qingqing, and Zhu Huilong
A vertically integrated capacitorless memory cell (5 pages)
Tong Xiaodong, Wu Hao, Zhao Lichuan, Wang Ming, and Zhong Huicai
A novel compact model for on-chip stacked transformers in RF-CMOS technology (4 pages)
Liu Jun, Wen Jincai, Zhao Qian, and Sun Lingling
The abnormal electrostatic discharge of a no-connect metal cover in a ceramic packaging device (5 pages)
Li Song, Zeng Chuanbin, Luo Jiajun, and Han Zhengsheng
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Structural parameters improvement of an integrated HBT in a cascode configuration opto-electronic mixer
(6 pages)
Hassan Kaatuzian, Hadi Dehghan Nayeri, Masoud Ataei, and Ashkan Zandi
A surface-potential-based model for AlGaN/AlN/GaN HEMT (4 pages)
Wang Jie, Sun Lingling, Liu Jun, and Zhou Mingzhu
Performance of an AlGaN/GaN MISHEMT with sodium beta-alumina for gate insulation and surface passivation (4 pages)
Tian Benlang, Chen Chao, Zhang Wanli, and Liu Xingzhao
The total ionizing dose effects of non-planar triple-gate transistors (4 pages)
Liu Shiyao, He Wei, Cao Jianmin, and Huang Siwen
Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS (5 pages)
Jiang Yongheng, Luo Xiaorong, Li Yanfei, Wang Pei, Fan Ye, Zhou Kun, Wang Qi, Hu Xiarong, and Zhang Bo
A compact model for single material double work function gate MOSFET (5 pages)
Zheng Changyong, Zhang Wei, Xu Tailong, Dai Yuehua, and Chen Junning
An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process (4 pages)
Yu Ting and Luo Ling
Analytical model for high-voltage SOI device with composite-k dielectric buried layer (6 pages)
Fan Jie, Zhang Bo, Luo Xiaorong, Wang Zhigang, and Li Zhaoji
Novel high-voltage, high-side and low-side power devices with a single control signal (5 pages)
Kong Moufu and Chen Xingbi
The design and fabrication of a GaN-based monolithic light-emitting diode array (4 pages)
Zhan Teng, Zhang Yang, Li Jing, Ma Jun, Liu Zhiqiang, Yi Xiaoyan, Wang Guohong, and Li Jinmin
Analysis of fabrication results for 17 17 polymer arrayed waveguide grating multiplexers with flat spectral
responses (4 pages)
Qin Zhengkun, Yu Yue, Song Jia, Zhang Huiping, Wang Guofeng, Sun Yongxin, and Wang Yuhai
Integrated reconfigurable optical add-drop multiplexers based on cascaded microring resonators (6 pages)
Lu Yangyang, Tian Yonghui, and Yang Lin
Stability performance of optimized symmetric DG-MOSFET (4 pages)
K Sivasankaran and P S Mallick
Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors (3 pages)
Wan Xiaojia, Wang Xiaoliang, Xiao Hongling, Feng Chun, Jiang Lijuan, Qu Shenqi, Wang Zhanguo, and Hou Xun
Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime
(8 pages)
Aritra Acharyya, Jit Chakraborty, Kausik Das, Subir Datta, Pritam De, Suranjana Banerjee, and J. P. Banerjee
A 1.65 m three-section distributed Bragg reflector (DBR) laser for CH4 gas sensors (3 pages)
Niu Bin, Yu Hongyan, Yu Liqiang, Zhou Daibing, Lu Dan, Zhao Lingjuan, Pan Jiaoqing, and Wang Wei
Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy
and nanospherical-lens photolithography (5 pages)
Zhao Linghui, Wei Tongbo, Wang Junxi, Yan Qingfeng, Zeng Yiping, and Li Jinmin
A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy (4 pages)
Dai Pan, Lu Shulong, Ji Lian, He Wei, Bian Lifeng, Yang Hui, M. Arimochi, H. Yoshida, S. Uchida, and M. Ikeda
An accurate simulation model for single-photon avalanche diodes including important statistical effects (6 pages)
He Qiuyang, Xu Yue, and Zhao Feifei
Fabrication of a microstrip patch antenna integrated in low-resistance silicon wafer using a BCB dielectric
(4 pages)
Wang Tianxi, Han Mei, Xu Gaowei, and Luo Le
An integrated MEMS piezoresistive tri-axis accelerometer (7 pages)
Zhang Yongping, He Changde, Yu Jiaqi, Du Chunhui, Zhang Juanting, Chou Xiujian, and Zhang Wendong
Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs
including quantum effects (6 pages)
P. Vimala and N. B. Balamurugan
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A new approach to extracting the RF parameters of asymmetric DG MOSFETs with the NQS effect (5 pages)
Sudhansu Kumar Pati, Kalyan Koley, Arka Dutta, N Mohankumar, and Chandan Kumar Sarkar
RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT (6 pages)
T. R. Lenka, G. N. Dash, and A. K. Panda
Low ohmic contact AlN/GaN HEMTs grown by MOCVD (3 pages)
Gu Guodong, Dun Shaobo, Lü Yuanjie, Han Tingting, Xu Peng, Yin Jiayun, and Feng Zhihong
Improved memory performance of metal–oxide–nitride–oxide–silicon by annealing the SiO2 tunnel layer in
different nitridation atmospheres (4 pages)
He Meilin, Xu Jingping, Chen Jianxiong, and Liu Lu
Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods (4 pages)
An Tielei, Sun Bo, Wei Tongbo, Zhao Lixia, Duan Ruifei, Liao Yuanxun, Li Jinmin, and Yi Futing
Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO2 dielectric
and a TiN metal gate (4 pages)
Han Kai, Ma Xueli, Xiang Jinjuan, Yang Hong and Wang Wenwu
The corner rounding modeling technique in SPICE simulations for deeply scaled MOSFETs (4 pages)
Sun Wei and Yang Dake
Rapid evaluation method for the normal lifetime of an infrared light-emitting diode (4 pages)
Guo Xiaofeng, Tan Manqing, Wei Xin, Jiao Jian, Guo Wentao, and Sun Ningning
Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO
films interlayer (5 pages)
Li Shaolan and Zhang Lichun
High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current
(4 pages)
Dong Zhen, Wang Cuiluan, Jing Hongqi, Liu Suping, and Ma Xiaoyu
Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSb superlattices (5 pages)
Wang Guowei, Xiang Wei, Xu Yingqiang, Zhang Liang, Peng Zhenyu, Lü Yanqiu, Si Junjie, Wang Juan,
Xing Junliang, Ren Zhengwei, and Niu Zhichuan
The fabrication of vibration energy harvester arrays based on AlN piezoelectric film (4 pages)
Shang Zhengguo, Li Dongling, Wen Zhiyu, and Zhao Xingqiang
A feasibility study on SiC optoinjected CCD with buried channels (5 pages)
Ye Na, Chen Zhiming, and Xie Longfei
Design of a Bionic Cilia MEMS three-dimensional vibration sensor (7 pages)
Li Zhen, Zhang Guojun, Xue Chenyang, and Wu Shujuan
A novel ESD protection structure for output pads (4 pages)
Fan Hang, Jiang Lingli, and Zhang Bo
A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure (4 pages)
Li Binghua, Frank X. C. Jiang, Li Zhigui, and Lin Xinnan
A computational study of the effects of linear doping profile on the high-frequency and switching performances
of hetero-material-gate CNTFETs (6 pages)
Wang Wei, Li Na, Ren Yuzhou, Li Hao, Zheng Lifen, Li Jin, Jiang Junjie, Chen Xiaoping, Wang Kai,
and Xia Chunping
ESD performance of LDMOS with source-bulk layout structure optimization (5 pages)
Jiang Lingli, Fan Hang, Lin Lijuan, and Zhang Bo
Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate
(4 pages)
Jing Liang, Xiao Hongling, Wang Xiaoliang, Wang Cuimei, Deng Qingwen, Li Zhidong, Ding Jieqin,
Wang Zhanguo, and Hou Xun
Thermal simulation and analysis of flat surface flip-chip high power light-emitting diodes (4 pages)
Chen Maoxing, Xu Chen, Xu Kun, and Zheng Lei
Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters (7 pages)
Wang Xin, Lu Wu, Guo Qi, Wu Xue, Xi Shanbin, Deng Wei, Cui Jiangwei, and Zhang Jinxin
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SEMICONDUCTOR INTEGRATED CIRCUITS
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A novel broadband power amplifier in SiGe HBT technology (5 pages)
Li Wenyuan and Zhang Qian
A fully integrated multi-standard frequency synthesizer for GNSS receivers with cellular network positioning
capability (8 pages)
Li Bin, Fan Xiangning, Li Wei, Zhang Li, and Wang Zhigong
A wideband current-commutating passive mixer for multi-standard receivers in a 0.18 m CMOS (9 pages)
Bao Kuan, Fan Xiangning, Li Wei, and Wang Zhigong
A wideband 0.13 m CMOS LC-VCO for IMT-advanced and UWB applications (6 pages)
Tang Xin, Huang Fengyi, Tang Xusheng, and Shao Mingchi
Design of a novel mixer with high gain and linearity improvement for DRM/DAB applications (5 pages)
Wu Yiqiang, Wang Zhigong, Xu Jian, Wang Jian, Zhang Ouli, and Tang Lu
Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter (6 pages)
Wu Xue, Lu Wu, Wang Yiyuan, Xu Jialing, Zhang Leqing, Lu Jian, Yu Xin, Zhang Xingyao, and Hu Tianle
Monolithic quasi-sliding-mode controller for SIDO buck converter with a self-adaptive free-wheeling current
level (7 pages)
Wu Xiaobo, Liu Qing, Zhao Menglian, and Chen Mingyang
A wideband frequency synthesizer with VCO and AFC co-design for fast calibration (6 pages)
Lou Liheng, Sun Lingling, Gao Haijun, and Zhan Haiting
A new LTPS TFT AC pixel circuit for an AMOLED (5 pages)
Zhang Yongwen and Chen Wenbin
An 11-bit ENOB, accuracy-programmable, and non-calibrating time-mode SAR ADC (11 pages)
Fan Hua, Han Xue, Wei Qi, and Yang Huazhong
Phase noise modeling in LC oscillators implemented in SiGe technology (7 pages)
M. Bouhouche, S. Latreche, and C. Gontrand
0.9 GHz and 2.4 GHz dual-band SiGe HBT LNA (5 pages)
Lu Zhiyi, Xie Hongyun, Huo Wenjuan, and Zhang Wanrong
A clock generator for a high-speed high-resolution pipelined A/D converter (6 pages)
Zhao Lei, Yang Yintang, Zhu Zhangming, and Liu Lianxi
A 14-bit 1-GS/s DAC with a programmable interpolation filter in 65 nm CMOS (8 pages)
Zhao Qi, Li Ran, Qiu Dong, Yi Ting, Bill Yang Liu, and Hong Zhiliang
A 10 MHz ripple-based on-time controlled buck converter with dual ripple compensation (7 pages)
Lü Danzhu, Yu Jiale, and Hong Zhiliang
A fast novel soft-start circuit for peak current-mode DC–DC buck converters (5 pages)
Li Jie, Yang Miao, Sun Weifeng, Lu Xiaoxia, Xu Shen, and Lu Shengli
A low glitch 12-bit current-steering CMOS DAC for CNC systems (5 pages)
Lei Jianming, Gui Hanshu, and Hu Beiwen
A differential automatic gain control circuit with two-stage –10 to 50 dB tuning range VGAs (6 pages)
Wang Wenbo, Mao Luhong, Xiao Xindong, Zhang Shilin, and Xie Sheng
A novel switched capacitor bandgap reference with a correlated double sampling structure (4 pages)
Chen Jianguang, Hao Yueguo, and Cheng Yuhua
An 8 bit 12 MS/s asynchronous successive approximation register ADC with an on-chip reference (5 pages)
Yu Meng, Wu Lipeng, Li Fule, and Wang Zhihua
Discrete ternary particle swarm optimization for area optimization of MPRM circuits (6 pages)
Yu Haizhen, Wang Pengjun, Wang Disheng, and Zhang Huihong
A low jitter PLL clock used for phase change memory (5 pages)
Hong Xiao, Chen Houpeng, Song Zhitang, Cai Daolin, and Li Xi
A digitally calibrated CMOS RMS power detector for RF automatic gain control (7 pages)
Yan Taotao, Wang Hui, Li Jinbo, and Zhou Jianjun
A saw-less direct conversion long term evolution receiver with 25% duty-cycle LO in 130 nm CMOS technology
(6 pages)
He Siyuan, Zhang Changhong, Tao Liang, Zhang Weifeng, Zeng Longyue, Lü Wei, and Wu Haijun
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An 8-bit 100-MS/s digital-to-skew converter embedded switch with a 200-ps range for time-interleaved sampling
(5 pages)
Zhu Xiaoshi, Chen Chixiao, Xu Jialiang, Ye Fan, and Ren Junyan
A multi-path gated ring oscillator based time-to-digital converter in 65 nm CMOS technology (5 pages)
Jiang Chen, Huang Yumei, and Hong Zhiliang
High linearity current communicating passive mixer employing a simple resistor bias (4 pages)
Liu Rongjiang, Guo Guiliang, and Yan Yuepeng
A 6–7 GHz, 40 dB receiver RF front-end with 4.5 dB minimum noise figure in 0.13 m CMOS for IR-UWB
applications (7 pages)
Qin Xi, Huang Yumei, and Hong Zhiliang
A CMOS low power, process/temperature variation tolerant RSSI with an integrated AGC loop (8 pages)
Lei Qianqian, Lin Min, and Shi Yin
A lower power reconfigurable multi-band transceiver for short-range communication (7 pages)
Zhang Lingwei, Chi Baoyong, Qi Nan, Liu Liyuan, Jiang Hanjun, and Wang Zhihua
A 27-mW 10-bit 125-MSPS charge domain pipelined ADC with a PVT insensitive boosted charge transfer circuit
(9 pages)
Chen Zhenhai, Huang Songren, Zhang Hong, Yu Zongguang, and Ji Huicai
The design principles of a 2mW 18-bit high speed weight voltage type DAC based on dual weight resistance
chain (6 pages)
Chen Qixing and Luo Qiyu
Analysis of the dV /dt effect on an IGBT gate circuit in IPM (5 pages)
Hua Qing, Li Zehong, Zhang Bo, Huang Xiangjun, and Cheng Dekai
A –3 dBm RF transmitter front-end for 802.11g application (7 pages)
Zhao Jinxin, Yan Jun, and Shi Yin
A 23 GHz low power VCO in SiGe BiCMOS technology (4 pages)
Huang Yinkun, Wu Danyu, Zhou Lei, Jiang Fan, Wu Jin, and Jin Zhi
New de-embedding structures for extracting the electrical parameters of a through-silicon-via pair (7 pages)
Zhou Jing, Wan Lixi, Li Jun, Wang Huijuan, Dai Fengwei, Daniel Guidotti, Cao Liqiang, and Yu Daquan
A dual-path, current-sensing resistor-free boost LED driver with fast PWM dimming (7 pages)
Zhou Minchao, Lü Danzhu, Cheng Lin, Bill Yang Liu, and Hong Zhiliang
Feed-through cancellation of a MEMS filter using the difference method and analysis of the induced notch
(6 pages)
Han Guowei, Si Chaowei, Ning Jin, Zhong Weiwei, Sun Guosheng, Zhao Yongmei, and Yang Fuhua
A 1.8 V 1.1 MS/s 96.1 dB-SFDR successive approximation register analog-to-digital converter with calibration
(7 pages)
Chi Yingying and Li Dongmei
SRAM standby leakage decoupling analysis for different leakage reduction techniques (5 pages)
Dong Qing and Lin Yinyin
C-band 6-bit phase shifter for a phase array antenna (4 pages)
Yang Xiaofeng and Shi Jiangyi
A low leakage power-rail ESD detection circuit with a modified RC network for a 90-nm CMOS process
(5 pages)
Yang Zhaonian, Liu Hongxia, and Wang Shulong
A low noise multi-channel readout IC for X-ray cargo inspection (6 pages)
Wang Xu, Yang Hongyan, Yuan Ying, and Wu Wuchen
A novel COB structure with integrated multifunction (4 pages)
Xie Zhiguo, Li Cheng, Yu Binhai, and Wang Yaohao
A low-power portable ECG sensor interface with dry electrodes (6 pages)
Pu Xiaofei, Wan Lei, Zhang Hui, Qin Yajie, and Hong Zhiliang
Design of basic digital circuit blocks based on an OFET device charge model (5 pages)
Shen Shu
A 0.5 V divider-by-2 design with optimization methods for wireless sensor networks (6 pages)
Wang Lidan and Li Zhiqun
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A new AC driving circuit for a top emission AMOLED (5 pages)
Zhang Yongwen, Chen Wenbin, and Liu Haohan
A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n (6 pages)
Cui Jie, Chen Lei, Kang Chunlei, Shi Jia, Zhang Xuguang, Ai Baoli, and Liu Yi
A wide range sigma–delta fractional-N frequency synthesizer with adaptive frequency calibration
(5 pages)
Wei Jianjun, Jiang Hanjun, Zhang Lingwei, Dong Jingjing, Li Fule, Wang Zhihua, and Zhang Chun
A wide load range, multi-mode synchronous buck DC–DC converter with a dynamic mode controller and adaptive slope compensation (8 pages)
Zhang Chunhong, Yang Haigang, and Richard Shi
A 0.9-V switched-opamp-based delta–sigma ADC with dual cycle shift DWA (8 pages)
Zhao Jinchen, Zhao Menglian, Wu Xiaobo, and Wang Hanqing
A low power time-interleaved 10-bit 250-MSPS charge domain pipelined ADC for IF sampling (8 pages)
Chen Zhenhai, Qian Hongwen, Huang Songren, Zhang Hong, and Yu Zongguang
An I/Q DAC with gain matching circuit for a wireless transmitter (6 pages)
Tang Hualian, Zhuang Yiqi, Jing Xin, and Zhang Li
Delay-area trade-off for MPRM circuits based on hybrid discrete particle swarm optimization (6 pages)
Jiang Zhidi, Wang Zhenhai, and Wang Pengjun
A noise immunity improved level shift structure for a 600 V HVIC (5 pages)
Zhang Yunwu, Zhu Jing, Sun Guodong, Liu Cuichun, Sun Weifeng, and Qian Qinsong
A continuously and widely tunable analog baseband chain with digital-assisted calibration for multi-standard
DBS applications (9 pages)
Li Songting, Li Jiancheng, Gu Xiaochen, and Wang Hongyi
A multiple transistor combination low-voltage curvature-corrected bandgap reference (5 pages)
Su Kai, Gong Min, Qin Huaibin, and Sun Chen
A 65 nm CMOS high efficiency 50 GHz VCO with regard to the coupling effect of inductors (5 pages)
Ye Yu and Tian Tong
A 5 Gb/s low power current-mode transmitter with pre-emphasis for serial links (7 pages)
Lü Junsheng, Ju Hao, Ye Mao, Zhang Feng, Zhao Jianzhong, and Zhou Yumei
A very low noise preamplifier for extremely low frequency magnetic antenna (5 pages)
Feng Shimin, Zhou Suihua, and Chen Zhiyi
A CMOS G m –C complex filter with a reconfigurable center and cutoff frequencies in low-IF WiMAX receivers
(7 pages)
Cheng Xin, Yang Haigang, Gao Tongqiang, and Yin Tao
A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain (7 pages)
Yao Hongfei, Cao Yuxiong, Wu Danyu, Ning Xiaoxi, Su Yongbo, and Jin Zhi
A fully integrated 3.5 GHz CMOS differential power amplifier driver (6 pages)
Xu Xiaodong, Yang Haigang, Gao Tongqiang, and Zhang Hongfeng
I/Q mismatch calibration based on digital baseband (7 pages)
Lei Qianqian, Zhao Erhu, Yuan Fang, Lin Min, Li Lianbi, and Feng Song
Scaling trends in energy recovery logic: an analytical approach (5 pages)
Jitendra Kanungo and S. Dasgupta
A dual-band quadrature VCO with gain proportional to oscillation frequency (6 pages)
Zhu Wenrui, Yang Haigang, Gao Tongqiang, and Zhang Hui
A 1.2-V, 84-dB † ADM in 0.18-m digital CMOS technology (4 pages)
Yin Shujuan and Li Xiangyu
An ultra-low-power area-efficient non-volatile memory in a 0.18 m single-poly CMOS process for passive
RFID tags (5 pages)
Jia Xiaoyun, Feng Peng, Zhang Shengguang, Wu Nanjian, Zhao Baiqin, and Liu Su
An ultra-broadband distributed passive gate-pumped mixer in 0.18 m CMOS (7 pages)
Yu Zhenxing and Feng Jun
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High-Q micro-ring resonators and grating couplers for silicon-on-insulator integrated photonic circuits
(4 pages)
Tong Xiaogang, Liu Jun, and Xue Chenyang
A low power 2.4 GHz transceiver for ZigBee applications (10 pages)
Liu Weiyang, Chen Jingjing, Wang Haiyong, and Wu Nanjian
A high SFDR 6-bit 20-MS/s SAR ADC based on time-domain comparator (7 pages)
Han Xue, Fan Hua, Wei Qi, and Yang Huazhong
An RF frontend circuit design of a Compass and GPS dual-mode dual-channel image rejection radio receiver
(6 pages)
Zhang Gong, Chen Honglin, Liu Wei, Yang Hanbing, Zhang Lijuan, Wang Xiangwei, Shi Lei, Hu Sijing,
Wang Mingzhao, and Fu Zhuojian
A 30-dB 1–16-GHz low noise IF amplifier in 90-nm CMOS (11 pages)
Cao Jia, Li Zhiqun, Li Qin, Chen Liang, Zhang Meng, Wu Chenjian, Wang Chong, and Wang Zhigong
A baseband circuit for wake-up receivers with double-mode detection and enhanced sensitivity robustness
(6 pages)
Zhu Wenrui, Yang Haigang, Gao Tongqiang, Liu Fei, Cheng Xiaoyan, and Zhang Dandan
A current-mode DC–DC buck converter with adaptive zero compensation (5 pages)
Yang Ling, Dai Guoding, Xu Chongwei, and Liu Yuezhi
A 14-bit 250-MS/s current-steering CMOS digital-to-analog converter (7 pages)
Li Xueqing, Fan Hua, Wei Qi, Xu Zhen, Liu Jianan, and Yang Huazhong
A 1-V 10-bit 80-MS/s 1.6-mW SAR ADC in 65-nm GP CMOS (10 pages)
Ma Jun, Guo Yawei, Wu Yue, Cheng Xu, and Zeng Xiaoyang
A 14-bit 100-MS/s CMOS pipelined ADC with 11.3 ENOB (5 pages)
Wang Ke, Fan Chaojie, Zhou Jianjun, and Pan Wenjie
A 10-bit column-parallel cyclic ADC for high-speed CMOS image sensors (6 pages)
Han Ye, Li Quanliang, Shi Cong, and Wu Nanjian
A VHF RFPGA with adaptive phase-correction technique (5 pages)
Cheng Xu, Guo Guiliang, Yan Yuepeng, Liu Rongjiang, and Jiang Yu
VLSI scaling methods and low power CMOS buffer circuit (8 pages)
Vijay Kumar Sharma and Manisha Pattanaik
A low-power 20 GSps track-and-hold amplifier in 0.18 m SiGe BiCMOS technology (5 pages)
Tang Kai, Meng Qiao, Wang Zhigong, Zhang Yi, Yin Kuai, and Guo Ting
Design of a delay-locked-loop-based time-to-digital converter (7 pages)
Ma Zhaoxin, Bai Xuefei, and Huang Lu
A 1.2 V dual-channel 10 bit pipeline ADC in 55 nm CMOS for WLAN receivers (5 pages)
Gong Zheng, Hu Xueqing, Yan Jun, and Shi Yin
A passive UHF RFID tag with a dynamic-Vth -cancellation rectifier (5 pages)
Shen Jinpeng, Wang Bo, Liu Shan, Wang Xin’an, Ruan Zhengkun, and Li Shoucheng
W-band push–push monolithic frequency doubler in 1-m InP DHBT technology (6 pages)
Yao Hongfei, Wang Xiantai, Wu Danyu, Su Yongbo, Cao Yuxiong, Ge Ji, Ning Xiaoxi, and Jin Zhi
A high linearity multi-band and gain adjustable channel-select filter for TV-tuner application (8 pages)
Wang Xin, Cheng Tao, Liu Jie, and Tang Zhangwen
A reconfigurable multi-mode multi-band transmitter with integrated frequency synthesizer for short-range
wireless communication (7 pages)
Qi Nan, Chen Fan, Zhang Lingwei, Wang Xiaoman, and Chi Baoyong
Design optimizations of phase noise, power consumption and frequency tuning for VCO (6 pages)
Chen Nan, Diao Shengxi, Huang Lu, Bai Xuefei, and Lin Fujiang
A sub-1-dB noise figure monolithic GNSS LNA (5 pages)
Zhou Renjie, Xiang Yong, Wang Hong, Gan Yebing, Qian Min, Ma Chengyan, and Ye Tianchun
A wideband CMOS inductorless low noise amplifier employing noise cancellation for digital TV tuner applications (6 pages)
Zhang Jihong, Bai Xuefei, and Huang Lu
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A dual redundancy radiation-hardened flip–flop based on a C-element in a 65 nm process (4 pages)
Chen Gang, Gao Bo, and Gong Min
An area-efficient 55 nm 10-bit 1-MS/s SAR ADC for battery voltage measurement (7 pages)
Chen Hongming, Hao Yueguo, Zhao Long, and Cheng Yuhua
Circuit modeling and performance analysis of SWCNT bundle 3D interconnects (7 pages)
Qian Libo, Zhu Zhangming, Ding Ruixue, and Yang Yintang
A 55 nm CMOS † fractional-N frequency synthesizer for WLAN transceivers with low noise filters (8 pages)
Chen Mingyi, Chu Xiaojie,Yu Peng, Yan Jun, and Shi Yin
A novel buck/LDO dual-mode DC–DC converter for efficiency improvement (6 pages)
Fan Shiquan, Xue Zhongming, Lu Hao, Zhao Hui, and Geng Li
A wideband large dynamic range and high linearity RF front-end for U-band mobile DTV (5 pages)
Liu Rongjiang, Liu Shengyou, Guo Guiliang, Cheng Xu, and Yan Yuepeng
A voltage regulator system with dynamic bandwidth boosting for passive UHF RFID transponders (5 pages)
Shen Jinpeng, Wang Xin’an, Liu Shan, Li Shoucheng and Ruan Zhengkun
VLSI implementation of MIMO detection for 802.11n using a novel adaptive tree search algorithm (7 pages)
Yao Heng, Jian Haifang, Zhou Liguo, and Shi Yin
Design of a low-power 433/915-MHz RF front-end with a current-reuse common-gate LNA (7 pages)
Jing Yiou and Lu Huaxiang
Robust design of a 500-MS/s 10-bit triple-channel current-steering DAC in 40 nm CMOS (7 pages)
Cheng Long, Zhu Yu, Zhu Kai, Chen Chixiao, and Ren Junyan
Novel bandgap-based under-voltage-lockout methods with high reliability (8 pages)
Zhao Yongrui and Lai Xinquan
A multi-channel fully differential programmable integrated circuit for neural recording application (8 pages)
Gui Yun, Zhang Xu, Wang Yuan, Liu Ming, Pei Weihua, Liang Kai, Huang Suibiao, Li Bin, and Chen Hongda
A wideband on-chip millimeter-wave patch antenna in 0.18 m CMOS (5 pages)
Meng Xiangyu, Chi Baoyong, Jia Haikun, Kuang Lixue, Jia Wen, and Wang Zhihua
A low-power high-performance configurable auto-gain control loop for a digital hearing aid SoC (6 pages)
Chen Chengying, Liu Hainan, Hei Yong, Fan Jun, and Hu Xiaoyu
A new high-voltage level-shifting circuit for half-bridge power ICs (6 pages)
Kong Moufu and Chen Xingbi
A digital input class-D audio amplifier with sixth-order PWM (6 pages)
Luo Shumeng and Li Dongmei
A low power high gain gain-controlled LNA C mixer for GNSS receivers (7 pages)
Wei Binbin and Jiang Jinguang
Design and analysis of a three-stage voltage-controlled ring oscillator (6 pages)
Lei Xuemei, Wang Zhigong, and Shen Lianfeng
A novel interconnect optimal buffer insertion model considering the self-heating effect (6 pages)
Zhang Yan, Dong Gang, Yang Yintang, Wang Ning, Ding Yaoshun, Liu Xiaoxian, and Wang Fengjuan
A 97 dB dynamic range CSA-based readout circuit with analog temperature compensation for MEMS capacitive
sensors (8 pages)
Yin Tao, Zhang Chong, Wu Huanming, Wu Qisong, and Yang Haigang
60-GHz array antenna with standard CMOS technology on Schott Borofloat (4 pages)
Luo Jun, Wang Yan, and Yue Ruifeng
A 4 GHz 32 bit direct digital frequency synthesizer based on a novel architecture (6 pages)
Wu Jin, Chen Jianwu, Wu Danyu, Zhou Lei, Jiang Fan, Jin Zhi, and Liu Xinyu
Power-aware transceiver design for half-duplex bidirectional chip-to-chip optical interconnects (6 pages)
Jamshid Sangirov, Ikechi Augustine Ukaegbu, Gulomjon Sangirov, Tae-Woo Lee, and Hyo-Hoon Park
A fixed-frequency fast transient response DC–DC controller for VRMs (6 pages)
Chen Mingyang, Zhao Menglian, and Wu Xiaobo
A W-band two-stage cascode amplifier with gain of 25.7 dB (5 pages)
Zhong Yinghui, Zhang Yuming, Zhang Yimen, Cao Yuxiong, Yao Hongfei, Wang Xiantai, Lü Hongliang,
Liu Xinyu, and Jin Zhi
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W-band high output power Schottky diode doublers with quartz substrate (5 pages)
Yao Changfei, Zhou Ming, Luo Yunsheng, Li Jiao, and Xu Conghai
A 20–25.5 GHz VCO using a new variable inductor for K band application (9 pages)
Zhu Ning, Li Wei, Li Ning, and Ren Junyan
A readout system for passive pressure sensors (6 pages)
Zhang Huixin, Hong Yingping, Ge Binger, Liang Ting, and Xiong Jijun
A 10 Gsps 8 bit digital-to-analog converter with a built-in self-test circuit (5 pages)
Zhou Lei, Wu Danyu, Jiang Fan, Jin Zhi, and Liu Xinyu
Modeling and parameter extraction of CMOS on-chip coplanar waveguides up to 67 GHz for mm-wave applications (7 pages)
Luo Jun, Zhang Lei, and Wang Yan
A low-noise high-linearity interface ASIC for MEMS gyroscopes (6 pages)
Fang Ran, Lu Wengao, Wang Guannan, Tao Tingting, Zhang Yacong, Chen Zhongjian, and Yu Dunshan
A 6.25 Gb/s equalizer in 0.18 m CMOS technology for high-speed SerDes (7 pages)
Zhang Mingke and Hu Qingsheng
A new poly-Si TFT compensation pixel circuit employing AC driving mode for AMOLED displays (4 pages)
Song Xiaofeng, Luo Jianguo, Zhou Lei, Zhang Lirong, Wu Weijing, and Peng Junbiao
A new circuit for at-speed scan SoC testing (5 pages)
Lin Wei and Shi Wenlong
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A multivariate process capability index with a spatial coefficient (4 pages)
Wang Shaoxi, Wang Mingxin, Fan Xiaoya, Zhang Shengbing, and Han Ru
Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors
(6 pages)
Zhao Xiaofeng, Wen Dianzhong, Zhuang Cuicui, Cao Jingya, and Wang Zhiqiang
Evaluation of planarization capability of copper slurry in the CMP process (4 pages)
Yin Kangda, Wang Shengli, Liu Yuling, Wang Chenwei, and Li Xiang
Reactive ion etching of Si2 Sb2 Te5 in CF4 /Ar plasma for a nonvolatile phase-change memory device (5 pages)
Li Juntao, Liu Bo, Song Zhitang, Yao Dongning, Feng Gaoming, He Aodong, Peng Cheng, and Feng Songlin
Interconnects for nanoscale MOSFET technology: a review (8 pages)
Amit Chaudhry
Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices (5 pages)
Fu Zuozhen, Yin Huaxiang, Ma Xiaolong, Chai Shumin, Gao Jianfeng, and Chen Dapeng
Prevention of plasma-induced damage on thin gate oxides in BEOL sub-half micron CMOS processing (4 pages)
He Qi, Zhao Wenbin, Peng Li, and Yu Zongguang
Two-dimensional simulation of inductively coupled plasma based on COMSOL and comparison with experimental data (7 pages)
Cheng Jia, Ji Linhong, Wang Kesheng, Han Chuankun, and Shi Yixiang
Effective interface passivation of a Ge/HfO2 gate stack using ozone pre-gate treatment and ozone ambient annealing (4 pages)
Zhao Mei, Liang Renrong, Wang Jing, and Xu Jun
Remote scavenging technology using a Ti/TiN capping layer interposed in a metal/high-k gate stack
(3 pages)
Ma Xueli, Han Kai, and Wang Wenwu
Chemical mechanical planarization of amorphous Ge2 Sb2 Te5 with a soft pad (5 pages)
He Aodong, Liu Bo, Song Zhitang, Lü Yegang, Li Juntao, Liu Weili, Feng Songlin, and Wu Guanping
Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation
(4 pages)
Han Kai, Ma Xueli, Yang Hong, and Wang Wenwu
Reactive ion etching of Ti-diffused LiNbO3 slab waveguides (5 pages)
Wu Jianjie, Li Jinyang, Yao Yanqing, and Qi Zhimei
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Modulation of the effective work function of TiN metal gate for PMOS application (4 pages)
Han Kai, Ma Xueli, Yang Hong, and Wang Wenwu
Planarization mechanism of alkaline copper CMP slurry based on chemical mechanical kinetics (4 pages)
Wang Shengli, Yin Kangda, Li Xiang, Yue Hongwei, and Liu Yunling
A novel oxidation-based wet etching method for AlGaN/GaN heterostructures (4 pages)
Cai Jinbao, Wang Jinyan, Liu Yang, Xu Zhe, Wang Maojun, Yu Min, Xie Bing, and Wu Wengang
A new fabrication process for the SOI-based miniature electric field sensor (5 pages)
Liu Wei, Yang Pengfei, Peng Chunrong, Fang Dongming, and Xia Shanhong
Simulation of through via bottom–up copper plating with accelerator for the filling of TSVs (5 pages)
Wu Heng, Tang Zhen’an, Wang Zhu, Cheng Wan, and Yu Daquan
Low temperature Sn-rich Au–Sn wafer-level bonding (4 pages)
Fang Zhiqiang, Mao Xu, Yang Jinling, and Yang Fuhua
A novel OPC method to reduce mask volume with yield-aware dissection (6 pages)
Xie Chunlei, Chen Ye, and Shi Zheng
CMP process optimization using alkaline bulk copper slurry on a 300 mm Applied Materials Reflexion LK
system (3 pages)
Wang Chenwei, Ma Suohui, Liu Yuling, Chen Rui, and Cao Yang
SCIENCE FOUNDATION INFORMATION
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Be driven by innovation, be prosperous through hard work — analysis of the applied projects in 2012 semiconductor discipline of the National Natural Science Foundation of China (14 pages)
He Jie and Pan Qing
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