TS4984 2 x 1W Stereo audio power amplifier with active low standby mode ■ Operating from VCC=2.2V to 5.5V ■ 1W output power per channel @ VCC=5V, THD+N=1%, RL=8Ω 10nA standby current 62dB PSRR @ 217Hz with grounded inputs High SNR: 100dB(A) typ. Near-zero pop & click Available in QFN16 4x4 mm, 0.5mm pitch, leadfree package ■ ■ ■ ■ ■ Pin Connections (top view) TS4984IQ — TQFN16 4x4mm Description The TS4984 has been designed for top of the class stereo audio applications. Thanks to its compact and power dissipation efficient QFN package, it suits various applications. VO-L VO+L VCC1 VCC2 16 15 With a BTL configuration, this Audio Power Amplifier is capable of delivering 1W per channel of continuous RMS output power into an 8Ω load @ 5V. IN- L IN+ L 14 13 1 12 STBY 2 11 BYPASS R BYPASS L 3 10 IN+ R NC 4 9 IN- R An externally controlled standby mode control reduces the supply current to less than 10nA per channel. The device also features an internal thermal shutdown protection. 5 6 7 8 GND1 GND2 VO+R VO-R The gain of each channel can be configured by external gain setting resistors. Applications ■ ■ Cellular mobile phones Notebook computers & PDAs ■ ■ LCD monitors & TVs Portable audio devices Order Codes Part Number Temperature Range Package Packaging Marking TS4984IQT -40, +85°C QFN Tape & Reel K984 January 2005 Revision 1 1/29 TS4984 1 Typical Application Typical Application Figure 1 shows a schematic view of a typical audio amplification application using the TS4984. Table 1 describes the components used in this typical application. Figure 1: Typical application schematic Cfeed-L Rfeed-L 22k + VCC 13 14 Cs 1u Cin-L Rin-L GND 100n 1 IN-L - 2 IN+L + VCC2 Input L VCC1 U1 22k VO-L 16 VO+L 15 VO-R 8 VO+R 7 VCC 1 2 3 12 Standby 3 Bypass L Bias AV = -1 Neg. Output L Pos. Output L + + Cb 1u Wire optional Internal connection Cin-R Rin-R Input R GND 100n 10 IN+R + 9 IN-R - 22k AV = -1 Bypass R Neg. Output R Pos. Output R GND1 GND2 6 + 5 11 TS4984 Cfeed-R Rfeed-R 22k Table 1: External component descriptions Components RIN L,R Inverting input resistors which sets the closed loop gain in conjunction with Rfeed. These resistors also form a high pass filter with CIN (fc = 1 / (2 x Pi x RIN x CIN)). CIN L,R Input coupling capacitors which blocks the DC voltage at the amplifier input terminal. RFEED L,R Feedback resistors which sets the closed loop gain in conjunction with RIN. CS Supply Bypass capacitor which provides power supply filtering. CB Bypass pin capacitor which provides half supply filtering. AV L, R 2/29 Functional Description Closed loop gain in BTL configuration = 2 x (RFEED / RIN) on each channel. Absolute maximum ratings and operating conditions 2 TS4984 Absolute maximum ratings and operating conditions Table 2: Key parameters and their absolute maximum ratings Symbol VCC Vi Parameter Supply voltage 1 2 Value Unit 6 V Input Voltage Operating Free Air Temperature Range GND to VCC V Toper -40 to + 85 °C Tstg Storage Temperature -65 to +150 °C Maximum Junction Temperature 150 °C 120 Pd Thermal Resistance Junction to Ambient QFN16 Power Dissipation Internally Limited ESD 3 2 kV 200 200mA V Tj Rthja ESD Human Body Model Machine Model Latch-up Immunity °C/W 1) All voltages values are measured with respect to the ground pin 2) The magnitude of input signal must never exceed VCC + 0.3V / GND - 0.3V 3) The voltage value is measured with respect from pin to supply Table 3: Operating conditions Symbol Parameter VCC Supply Voltage VICM Common Mode Input Voltage Range VSTB Standby Voltage Input: Device ON Device OFF RL Load Resistor RTHJA Unit V 1.2V to VCC V 1.35 ≤ VSTB ≤ VCC GND ≤ VSTB ≤ 0.4 V ≥4 Ω ≥1 MΩ Thermal Shutdown Temperature 150 °C Thermal Resistance Junction to Ambient QFN161 QFN162 45 85 °C/W ROUTGND Resistor Output to GND (VSTB = GND) TSD Value 2.2 to 5.5 1) When mounted on a 4-layer PCB with via 2) When mounted on a 2 layer PCB 3/29 TS4984 3 Electrical characteristics Electrical characteristics Table 4: Electrical characteristics for VCC = +5V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol ICC ISTANDBY Parameter Supply Current No input signal, no load Standby Current 1 No input signal, Vstdby = GND, RL = 8Ω Voo Output Offset Voltage No input signal, RL = 8Ω Pout Output Power THD = 1% Max, F = 1kHz, RL = 8Ω THD + N PSRR Min. 0.8 Total Harmonic Distortion + Noise Po = 1Wrms, Av = 2, 20Hz ≤ F ≤ 20kHz, RL = 8Ω Power Supply Rejection Ratio2 RL = 8Ω, Av = 2, Vripple = 200mVpp, Input Grounded F = 217Hz F = 1kHz 55 55 Typ. Max. 7.4 12 10 1000 1 10 mA nA mV 1 W 0.2 % dB 62 64 Channel Separation, RL = 8Ω F = 1kHz F = 20Hz to 20kHz -92 -70 TWU Wake-Up Time (Cb = 1µF) 90 TSTDB Standby Time (Cb = 1µF) 10 Crosstalk Unit dB 130 ms µs VSTDBH Standby Voltage Level High 1.3 V VSTDBL Standby Voltage Level Low 0.4 V ΦM Phase Margin at Unity Gain RL = 8Ω, CL = 500pF 65 Degrees GM Gain Margin RL = 8Ω, CL = 500pF 15 dB GBP Gain Bandwidth Product RL = 8Ω 1.5 MHz 1) Standby mode is activated when Vstdby is tied to Gnd. 2) All PSRR data limits are guaranteed by production sampling tests Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the sinusoidal signal superimposed upon Vcc. 4/29 Electrical characteristics TS4984 Table 5: Electrical characteristics for VCC = +3.3V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol ICC ISTANDBY Parameter Min. Supply Current No input signal, no load Standby Current 1 No input signal, Vstdby = GND, RL = 8Ω Voo Output Offset Voltage No input signal, RL = 8Ω Pout Output Power THD = 1% Max, F = 1kHz, RL = 8Ω THD + N Total Harmonic Distortion + Noise Po = 400mWrms, Av = 2, 20Hz ≤ F ≤ 20kHz, RL = 8Ω PSRR Power Supply Rejection Ratio2 RL = 8Ω, Av = 2, Vripple = 200mVpp, Input Grounded F = 217Hz F = 1kHz 300 55 55 Typ. Max. 6.6 12 10 1000 1 10 mA nA mV 450 mW 0.1 % dB 61 63 Channel Separation, RL = 8Ω F = 1kHz F = 20Hz to 20kHz -94 -68 TWU Wake-Up Time (Cb = 1µF) 110 TSTDB Standby Time (Cb = 1µF) 10 Crosstalk Unit dB 140 ms µs VSTDBH Standby Voltage Level High 1.2 V VSTDBL Standby Voltage Level Low 0.4 V ΦM Phase Margin at Unity Gain RL = 8Ω, CL = 500pF 65 Degrees GM Gain Margin RL = 8Ω, CL = 500pF 15 dB GBP Gain Bandwidth Product RL = 8Ω 1.5 MHz 1) Standby mode is activated when Vstdby is tied to Gnd 2) All PSRR data limits are guaranteed by production sampling tests Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the sinusoidal signal superimposed upon Vcc. 5/29 TS4984 Electrical characteristics Table 6: Electrical characteristics for VCC = +2.6V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol ICC ISTANDBY Parameter Min. Supply Current No input signal, no load Standby Current 1 No input signal, Vstdby = GND, RL = 8Ω Voo Output Offset Voltage No input signal, RL = 8Ω Pout Output Power THD = 1% Max, F = 1kHz, RL = 8Ω THD + N Total Harmonic Distortion + Noise Po = 200mWrms, Av = 2, 20Hz ≤ F ≤ 20kHz, RL = 8Ω PSRR Power Supply Rejection Ratio2 RL = 8Ω, Av = 2, Vripple = 200mVpp, Input Grounded F = 217Hz F = 1kHz 200 55 55 Typ. Max. 6.2 12 10 1000 1 10 mA nA mV 250 mW 0.1 % dB 60 62 Channel Separation, RL = 8Ω F = 1kHz F = 20Hz to 20kHz -95 -68 TWU Wake-Up Time (Cb = 1µF) 125 TSTDB Standby Time (Cb = 1µF) 10 Crosstalk Unit dB 150 ms µs VSTDBH Standby Voltage Level High 1.2 V VSTDBL Standby Voltage Level Low 0.4 V ΦM Phase Margin at Unity Gain RL = 8Ω, CL = 500pF 65 Degrees GM Gain Margin RL = 8Ω, CL = 500pF 15 dB GBP Gain Bandwidth Product RL = 8Ω 1.5 MHz 1) Standby mode is activated when Vstdby is tied to Gnd 2) All PSRR data limits are guaranteed by production sampling tests Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the sinusoidal signal superimposed upon Vcc. 6/29 Electrical characteristics TS4984 Figure 5: Open loop frequency response Figure 2: Open loop frequency response 0 60 Gain 40 80 -120 -20 -80 40 Phase 20 Phase (°) Gain (dB) -80 -60 0.1 -40 60 Phase 0 -40 Gain -40 Phase (°) Gain (dB) 20 0 100 -120 0 Vcc = 5V RL = 8Ω Tamb = 25°C 1 -160 -20 10 100 1000 -200 10000 -40 0.1 -160 Vcc = 5V CL = 560pF Tamb = 25°C 1 10 Frequency (kHz) 100 1000 -200 10000 Frequency (kHz) Figure 6: Open loop frequency response Figure 3: Open loop frequency response 0 60 0 100 Gain 80 40 -120 -20 -80 40 Phase 20 Phase (°) Gain (dB) -80 Phase (°) Gain (dB) Phase 0 -60 0.1 -40 60 20 -40 Gain -40 -120 0 -160 Vcc = 3.3V RL = 8Ω Tamb = 25°C 1 -20 10 100 1000 -200 10000 -40 0.1 -160 Vcc = 3.3V CL = 560pF Tamb = 25°C 1 10 Frequency (kHz) 100 1000 -200 10000 Frequency (kHz) Figure 7: Open loop frequency response Figure 4: Open loop frequency response 0 60 0 100 Gain 80 40 -120 -20 -80 40 Phase 20 Phase (°) Gain (dB) -80 Phase (°) Gain (dB) Phase 0 -60 0.1 -40 60 20 -40 Gain -40 -120 0 -160 Vcc = 2.6V RL = 8Ω Tamb = 25°C 1 -20 10 100 Frequency (kHz) 1000 -200 10000 -40 0.1 -160 Vcc = 2.6V CL = 560pF Tamb = 25°C 1 10 100 1000 -200 10000 Frequency (kHz) 7/29 TS4984 Electrical characteristics Figure 8: Power supply rejection ratio (PSRR) vs. frequency Figure 11: Power supply rejection ratio (PSRR) vs. frequency 0 PSRR (dB) -20 -30 -40 -10 Vcc : 2.2V 2.6V 3.3V 5V PSRR (dB) -10 0 Vripple = 200mVpp Av = 2 Input = Grounded Cb = Cin = 1µF RL >= 4Ω Tamb = 25°C 100 1000 10000 Frequency (Hz) -60 100000 Figure 9: Power supply rejection ratio (PSRR) vs. frequency 1000 10000 Frequency (Hz) 100000 0 Vripple = 200mVpp Av = 5 Input = Grounded Cb = Cin = 1µF RL >= 4Ω Tamb = 25°C -10 Vcc : 2.2V 2.6V 3.3V 5V -20 PSRR (dB) PSRR (dB) 100 Figure 12: Power supply rejection ratio (PSRR) vs. frequency 0 -20 Vcc = 5, 3.3, 2.5 & 2.2V -50 -60 -10 -30 -40 -50 -70 -20 Vripple = 200mVpp Av = 2 Input = Grounded Cb = 0.1µF, Cin = 1µF RL >= 4Ω Tamb = 25°C -30 -40 -30 Vripple = 200mVpp Rfeed = 22kΩ Input = Floating Cb = 1µF RL >= 4Ω Tamb = 25°C Vcc = 2.2, 2.6, 3.3, 5V -40 -50 -60 -50 -60 -70 100 1000 10000 Frequency (Hz) -80 100000 -10 Vcc : 2.2V 2.6V 3.3V 5V -20 PSRR (dB) PSRR (dB) Vripple = 200mVpp Av = 10 Input = Grounded Cb = Cin = 1µF RL >= 4Ω Tamb = 25°C -30 -40 -30 Vripple = 200mVpp Rfeed = 22kΩ Input = Floating Cb = 0.1µF RL >= 4Ω Tamb = 25°C Vcc = 2.2, 2.6, 3.3, 5V -40 -50 -60 -70 -50 100 8/29 100000 0 0 -20 1000 10000 Frequency (Hz) Figure 13: Power supply rejection ratio (PSRR) vs. frequency Figure 10: Power supply rejection ratio (PSRR) vs. frequency -10 100 1000 10000 Frequency (Hz) 100000 -80 100 1000 10000 Frequency (Hz) 100000 Electrical characteristics TS4984 Figure 17: Power supply rejection ratio (PSRR) vs. DC output voltage Figure 14: Power supply rejection ratio (PSRR) vs. DC output voltage 0 0 Vcc = 5V Vripple = 200mVpp RL = 8Ω Cb = 1µF AV = 2 Tamb = 25°C PSRR (dB) -20 -30 -10 -20 PSRR (dB) -10 -40 -50 -60 -60 -4 -3 -2 -1 0 1 2 3 Differential DC Output Voltage (V) 4 -70 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 5 Differential DC Output Voltage (V) Figure 18: Power supply rejection ratio (PSRR) vs. DC output voltage Figure 15: Power supply rejection ratio (PSRR) vs. DC output voltage 0 0 Vcc = 5V Vripple = 200mVpp RL = 8Ω Cb = 1µF AV = 5 Tamb = 25°C -20 -10 PSRR (dB) -10 PSRR (dB) -40 -50 -70 -5 -30 -20 -40 -50 -50 -4 -3 -2 -1 0 1 2 3 Differential DC Output Voltage (V) 4 -60 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 5 Differential DC Output Voltage (V) Figure 19: Power supply rejection ratio (PSRR) vs. DC output voltage Figure 16: Power supply rejection ratio (PSRR) vs. DC output voltage 0 0 Vcc = 5V Vripple = 200mVpp RL = 8Ω Cb = 1µF AV = 10 Tamb = 25°C -20 -10 PSRR (dB) -10 -30 -20 Vcc = 3.3V Vripple = 200mVpp RL = 8Ω Cb = 1µF AV = 10 Tamb = 25°C -30 -40 -40 -50 -5 Vcc = 3.3V Vripple = 200mVpp RL = 8Ω Cb = 1µF AV = 5 Tamb = 25°C -30 -40 -60 -5 PSRR (dB) -30 Vcc = 3.3V Vripple = 200mVpp RL = 8Ω Cb = 1µF AV = 2 Tamb = 25°C -4 -3 -2 -1 0 1 2 3 Differential DC Output Voltage (V) 4 5 -50 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Differential DC Output Voltage (V) 9/29 TS4984 Electrical characteristics Figure 20: Power supply rejection ratio (PSRR) vs. DC output voltage Figure 23: Power supply rejection ratio (PSRR) at f=217Hz vs. bypass capacitor 0 PSRR (dB) -20 -30 Vcc = 2.6V Vripple = 200mVpp RL = 8Ω Cb = 1µF AV = 2 Tamb = 25°C Av=10 Vcc: 2.6V 3.3V 5V -30 PSRR at 217Hz (dB) -10 -40 -50 -40 -50 -60 -70 Av=2 Vcc: 2.6V 3.3V 5V Av=5 Vcc: 2.6V 3.3V 5V -60 -70 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 1 Bypass Capacitor Cb ( F) Differential DC Output Voltage (V) Figure 21: Power supply rejection ratio (PSRR) vs. DC output voltage Figure 24: Output power vs. power supply voltage 0 -20 2.00 Vcc = 2.6V Vripple = 200mVpp RL = 8Ω Cb = 1µF AV = 5 Tamb = 25°C RL = 4Ω 1.75 F = 1kHz BW < 125kHz 1.50 Tamb = 25°C THD+N=10% 1.25 Pout (W) PSRR (dB) -10 Tamb=25°C -80 0.1 -30 -40 1.00 0.75 0.50 -50 THD+N=1% 0.25 -60 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 0.00 2.5 2.5 3.0 3.5 Differential DC Output Voltage (V) Figure 22: Power supply rejection ratio (PSRR) vs. DC output voltage 5.0 5.5 1.75 Vcc = 2.6V Vripple = 200mVpp RL = 8Ω Cb = 1µF AV = 10 Tamb = 25°C RL = 8Ω 1.50 F = 1kHz BW < 125kHz 1.25 Tamb = 25°C Pout (W) PSRR (dB) -20 4.5 Figure 25: Output power vs. power supply voltage 0 -10 4.0 Vcc (V) -30 THD+N=10% 1.00 0.75 0.50 -40 THD+N=1% 0.25 -50 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 Differential DC Output Voltage (V) 10/29 2.0 2.5 0.00 2.5 3.0 3.5 4.0 Vcc (V) 4.5 5.0 5.5 Electrical characteristics TS4984 Figure 29: Output power vs. load resistor Figure 26: Output power vs. power supply voltage 0.7 1.0 RL = 16Ω F = 1kHz 0.8 BW < 125kHz Tamb = 25°C 0.7 THD+N=10% THD+N=10% 0.5 0.6 0.5 0.4 0.3 0.4 0.3 THD+N=1% 0.2 0.2 2.5 3.0 3.5 4.0 Vcc (V) 4.5 5.0 0.0 5.5 0.55 RL = 32Ω F = 1kHz 0.50 BW < 125kHz 0.45 Tamb = 25°C 0.40 12 16 20 Load resistance 24 28 32 THD+N=10% 0.30 0.25 0.35 0.30 0.25 0.20 0.15 0.20 0.15 0.10 THD+N=1% 0.10 THD+N=1% 0.05 0.05 0.00 2.5 3.0 3.5 4.0 Vcc (V) 4.5 5.0 5.5 0.00 THD+N=10% 1.25 Vcc = 5V F = 1kHz BW < 125kHz Tamb = 25°C 1.00 0.75 0.50 THD+N=1% 4 8 Power Dissipation (W) 1.75 1.50 4 16 20 24 Load Resistance (W) 28 12 16 20 Load resistance 24 28 32 Vcc=5V 2.4 F=1kHz THD+N<1% 2.0 RL=4Ω 1.6 1.2 32 RL=8Ω 0.8 0.4 12 8 Figure 31: Power dissipation vs. output power Figure 28: Output power vs. load resistor 0.25 Vcc = 2.6V F = 1kHz BW < 125kHz Tamb = 25°C 0.35 THD+N=10% Pout (W) Pout (W) 8 0.40 0.60 Pout (W) 4 Figure 30: Output power vs. load resistor Figure 27: Output power vs. power supply voltage 0.00 THD+N=1% 0.1 0.1 0.0 Vcc = 3.3V F = 1kHz BW < 125kHz Tamb = 25°C 0.6 Pout (W) Pout (W) 0.9 0.0 0.0 RL=16Ω 0.2 0.4 0.6 0.8 1.0 Output Power (W) 1.2 11/29 TS4984 Electrical characteristics Figure 32: Power dissipation vs. output power Figure 35: Clipping voltage vs. power supply voltage and load resistor 0.9 Vcc=3.3V F=1kHz 1.0 THD+N<1% Tamb = 25 C 0.8 Vout1 & Vout2 Clipping Voltage Low side (V) Power Dissipation (W) 1.2 RL=4Ω 0.6 RL=8Ω 0.4 0.2 0.7 0.5 RL = 8Ω 0.4 0.3 0.2 0.0 0.1 RL = 4Ω 0.6 0.1 RL=16Ω 0.0 0.0 0.8 0.2 0.3 0.4 Output Power (W) 0.5 0.6 Figure 33: Power dissipation vs. output power RL = 16Ω 2.5 3.0 3.5 Vcc (V) 4.0 4.5 5.0 Figure 36: Current consumption vs. power supply voltage Power Dissipation (W) 0.7 Vcc=2.6V 0.6 F=1kHz THD+N<1% No Loads Tamb=25°C 0.5 RL=4Ω 0.4 0.3 RL=8Ω 0.2 0.1 0.0 0.00 RL=16Ω 0.04 0.08 0.12 0.16 0.20 0.24 Output Power (W) 0.28 Figure 34: Clipping voltage vs. power supply voltage and load resistor Figure 37: Current consumption vs. standby voltage at Vcc=5V 1.0 Vout1 & Vout2 Clipping Voltage High side (V) Tamb = 25 C 0.9 RL = 4Ω 0.8 0.7 0.6 RL = 8Ω 0.5 0.4 RL = 16Ω 0.3 Vcc = 5V No Loads Tamb=25°C 0.2 2.5 12/29 3.0 3.5 Vcc (V) 4.0 4.5 5.0 Electrical characteristics TS4984 Figure 38: Current consumption vs. standby voltage at Vcc=3.3V Figure 41: THD+N vs. output power 10 THD+N (%) 1 Vcc = 3.3V No Loads Tamb=25°C RL = 4Ω F = 20Hz Av = 2 Cb = 1µF BW < 125kHz Tamb = 25°C Vcc=2.2V Vcc=2.6V Vcc=3.3V 0.1 Vcc=5V 0.01 1E−3 0.01 0.1 1 Pout (W) Figure 39: Current consumption vs. standby voltage at Vcc=2.6V Figure 42: THD+N vs. output power 10 THD+N (%) 1 RL = 8Ω F = 20Hz Av = 2 Cb = 1µF BW < 125kHz Tamb = 25°C Vcc=2.2V Vcc=2.6V Vcc=3.3V 0.1 Vcc=5V 0.01 Vcc = 2.6V No Loads Tamb=25°C 1E−3 1E−3 0.01 0.1 1 Pout (W) Figure 40: Current consumption vs. standby voltage at Vcc=2.2V Figure 43: THD+N vs. output power 10 THD+N (%) 1 RL = 16Ω F = 20Hz Av = 2 Cb = 1µF BW < 125kHz Tamb = 25°C Vcc=2.2V Vcc=2.6V Vcc=3.3V 0.1 Vcc=5V 0.01 Vcc = 2.2V No Loads Tamb=25°C 1E−3 1E−3 0.01 0.1 1 Pout (W) 13/29 TS4984 Electrical characteristics Figure 47: THD+N vs. output power Figure 44: THD+N vs. output power 10 10 RL = 4Ω F = 20kHz Av = 2 Cb = 1µF BW < 125kHz Tamb = 25°C Vcc = 2.2V Vcc = 2.6V Vcc = 3.3V THD+N (%) THD+N (%) RL = 4Ω F = 1kHz Av = 2 1 Cb = 1µF BW < 125kHz Tamb = 25°C Vcc = 5V 0.1 Vcc = 2.2V Vcc = 2.6V Vcc = 3.3V Vcc = 5V 1 0.01 1E−3 0.01 0.1 0.1 1E−3 1 0.01 0.1 Pout (W) Figure 48: THD+N vs. output power Figure 45: THD+N vs. output power 10 10 Vcc = 2.2V Vcc = 2.6V Vcc = 3.3V THD+N (%) THD+N (%) RL = 8Ω F = 1kHz Av = 2 1 Cb = 1µF BW < 125kHz Tamb = 25°C Vcc = 5V 0.1 0.01 1E−3 1 RL = 8Ω F = 20kHz Av = 2 Cb = 1µF BW < 125kHz Tamb = 25°C Vcc = 2.2V Vcc = 2.6V Vcc = 3.3V Vcc = 5V 0.1 0.01 0.1 1 1E−3 0.01 0.1 Pout (W) Figure 49: THD+N vs. output power 10 10 Vcc = 2.2V Vcc = 2.6V THD+N (%) THD+N (%) 1 Pout (W) Figure 46: THD+N vs. output power RL = 16Ω F = 1kHz Av = 2 1 Cb = 1µF BW < 125kHz Tamb = 25°C 1 Pout (W) Vcc = 3.3V Vcc = 5V 0.1 RL = 16Ω F = 20kHz Av = 2 Cb = 1µF BW < 125kHz 1 Tamb = 25°C Vcc = 2.2V Vcc = 2.6V Vcc = 3.3V Vcc = 5V 0.1 0.01 1E−3 0.01 0.1 Pout (W) 14/29 1 1E−3 0.01 0.1 Pout (W) 1 Electrical characteristics TS4984 Figure 53: SIgnal to noise ratio vs. power supply Figure 50: THD+N vs. frequency with unweighted filter (20Hz to 20kHz) Signal to Noise Ratio (dB) THD + N (%) 100 RL=4Ω Av=2 0.1 Cb = 1µF Bw < 125kHz Tamb = 25°C Vcc=5V, Po=1W Vcc=2.2V, Po=40mW 95 RL=16Ω RL=8Ω 90 RL=4Ω Av = 2 Cb = 1µF THD+N < 0.7% Tamb = 25°C 0.01 20 100 1000 Frequency (Hz) Signal to Noise Ratio (dB) THD + N (%) Vcc=5V, Po=O.8W 1000 Frequency (Hz) RL=16Ω RL=4Ω 75 2.5 3.0 Av = 10 Cb = 1µF THD+N < 0.7% Tamb = 25°C 3.5 4.0 4.5 5.0 Figure 55: SIgnal to noise ratio vs. power supply with A weighted filter 105 Signal to Noise Ratio (dB) THD + N (%) 5.0 Power Supply Voltage (V) Vcc=5V, Po=O.5W Vcc=2.2V, Po=70mW 0.01 1000 Frequency (Hz) 10000 20k RL=16Ω 100 RL=8Ω RL=4Ω 95 90 100 4.5 RL=8Ω 10000 20k Figure 52: THD+N vs. frequency 20 4.0 80 70 RL=16Ω 0.1 Av=2 Cb = 1µF Bw < 125kHz Tamb = 25°C 3.5 85 0.01 100 3.0 Figure 54: SIgnal to noise ratio vs. pwr supply with unweighted filter (20Hz to 20kHz) Vcc=2.2V, Po=70mW 20 2.5 Power Supply Voltage (V) Figure 51: THD+N vs. frequency RL=8Ω 0.1 Av=2 Cb = 1µF Bw < 125kHz Tamb = 25°C 85 10000 20k 2.5 3.0 Av = 2 Cb = 1µF THD+N < 0.7% Tamb = 25°C 3.5 4.0 4.5 5.0 Power Supply Voltage (V) 15/29 TS4984 Electrical characteristics Figure 59: Crosstalk vs. frequency Figure 56: SIgnal to noise ratio vs. power supply with A weighted filter 0 90 Crosstalk (dB) Signal to Noise Ratio (dB) 95 RL=16Ω RL=8Ω 85 RL=4Ω Av = 10 Cb = 1µF THD+N < 0.7% Tamb = 25°C 80 2.5 3.0 3.5 4.0 4.5 Vcc = 2.6V -20 Av = 2 Pout = 180mW RL = 8 Ω -40 BW < 125kHz Tamb = 25 C -60 -80 -100 -120 5.0 100 1000 Frequency (Hz) Power Supply Voltage (V) 0 0 Vcc = 5V -20 Av = 2 Pout = 1W RL = 8 Ω -40 BW < 125kHz Tamb = 25 C -60 Vcc = 2.2V Av = 2 Pout = 70mW RL = 8 Ω -40 BW < 125kHz Tamb = 25 C -60 -20 L to R Crosstalk (dB) Crosstalk (dB) 10000 Figure 60: Crosstalk vs. frequency Figure 57: Crosstalk vs. frequency R to L -80 -100 -120 -120 1000 Frequency (Hz) R to L L to R -80 -100 100 10000 100 1000 Frequency (Hz) 10000 Figure 61: Output noise voltage, device ON Figure 58: Crosstalk vs. frequency 50 Vcc = 3.3V -20 Av = 2 Pout = 300mW RL = 8 Ω -40 BW < 125kHz Tamb = 25 C -60 L to R Output Noise Voltage ( Vrms) 0 Crosstalk (dB) R to L L to R R to L -80 -100 Vcc = 2.2V to 5V Cb = 1µF RL = 8Ω Tamb = 25°C 45 40 35 Unweighted Filter 30 25 20 A Weighted Filter 15 -120 10 100 16/29 1000 Frequency (Hz) 10000 2 4 6 Closed Loop Gain 8 10 Electrical characteristics TS4984 Figure 63: Power derating curves QFN16 Package Power Dissipation (W) Output Noise Voltage ( Vrms) Figure 62: Output noise voltage, device in standby 3.00 2.75 2.50 2.25 Unweighted Filter 2.00 A Weighted Filter 1.75 1.50 1.25 1.00 0.75 Vcc = 2.2V to 5V 0.50 Cb = 1µF RL = 8Ω 0.25 Tamb = 25°C 0.00 2 4 3.5 2.5 Mounted on 2-layer PCB 2.0 1.5 1.0 0.5 0.0 6 8 10 Mounted on 4-layer PCB with via 3.0 No Heat sink 0 25 50 75 100 Ambiant Temperature ( C) 125 150 Closed Loop Gain 17/29 TS4984 4 Application Information Application Information The TS4984 integrates two monolithic power amplifiers with a BTL (Bridge Tied Load) output type (explained in more detail in Section 4.1). For this discussion, only the left-channel amplifier will be referred to. Referring to the schematic in Figure 64, we assign the following variables and values: Vin = IN-L Vout1 = VO-L, Vout2 = VO+R Rin = Rin-L, Rfeed = Rfeed-L Cfeed = Cfeed-L Figure 64: Typical application schematic - left channel Cfeed = Cfeed-L VCC + Rfeed = Rfeed-L Cs 1u Input L Cin = Cin-L Vin- = IN-L - Vin+= IN+L + VCC2 VCC1 TS4984 Rin = Rin-L GND Vout 1= VO-L RL Standby Bias AV = -1 Vout 2 = VO+L + + Bypass Cb 1u 4.1 BTL configuration principle BTL (Bridge Tied Load) means that each end of the load is connected to two single-ended output amplifiers. Thus, we have: Single-ended output 1 = Vout1 = Vout (V), Single-ended output 2 = Vout2 = -Vout (V), Vout1 - Vout2 = 2Vout (V) The output power is: 2 ( 2V outRMS ) P out = ------------------------------------RL For the same power supply voltage, the output power in a BTL configuration is four times higher than the output power in a single-ended configuration. 18/29 Application Information TS4984 4.2 Gain in typical application schematic The typical application schematic (Figure 64) is shown on page 18. In the flat region (no Cin effect), the output voltage of the first stage is: R feed V ou t 1 = ( – V in ) --------------R in (V) For the second stage: Vout2 = -Vout1 (V) The differential output voltage is: R feed V out 2 – V ou t 1 = 2V in --------------R (V) in The differential gain, referred to as Gv for greater convenience, is: V out 2 – V out 1 R feed G v = ------------------------------------ = 2 --------------R in V in Vout2 is in phase with Vin and Vout1 is phased 180° with Vin. This means that the positive terminal of the loudspeaker should be connected to Vout2 and the negative to Vout1. 4.3 Low and high frequency response In the low frequency region, Cin starts to have an effect. Cin forms with Rin a high-pass filter with a -3dB cut-off frequency: 1 F CL = -------------------------- (Hz) 2πR in C in In the high frequency region, you can limit the bandwidth by adding a capacitor (Cfeed) in parallel with Rfeed. It forms a low-pass filter with a -3dB cut-off frequency. FCH is in Hz. 1 F CH = ---------------------------------------2πR feed C feed (Hz) 19/29 TS4984 Application Information The following graph (Figure 65) shows an example of Cin and Cfeed influence. Figure 65: Frequency response gain versus Cin & C feed 10 5 Gain (dB) 0 Cfeed = 330pF Cfeed = 680pF -5 Cfeed = 2.2nF Cin = 470nF -10 -15 Cin = 22nF -20 Cin = 82nF -25 10 Rin = Rfeed = 22kΩ Tamb = 25°C 100 1000 Frequency (Hz) 10000 4.4 Power dissipation and efficiency Hypotheses: l Voltage and current in the load are sinusoidal (Vout and Iout). l Supply voltage is a pure DC source (Vcc). Regarding the load we have: V out = V PEAK sinωt (V) and V out I out = -------------RL (A) and V PE AK 2 P out = ------------------------2R L (W) Therefore, the average current delivered by the supply voltage is: V PEAK I CC = 2 ------------------(A) AV G π RL The power delivered by the supply voltage is: P 20/29 su pply = V CC ⋅ I CC A VG (W) Application Information TS4984 Then, the power dissipated by each amplifier is: P diss = P sup ply 2 2 V CC P d iss = ------------------------ ⋅ π RL (W) – P out P out – P out (W) and the maximum value is obtained when: ∂P d iss --------------------- = 0 ∂P out and its value is: 2 2V cc P dissmax = -----------π2RL Note: (W) This maximum value is only depending on power supply voltage and load values. The efficiency, η, is the ratio between the output power and the power supply: π V PEAK P o ut η = --------------------- = ------------------------P supply 4V CC The maximum theoretical value is reached when VPEAK = VCC, so that: π ----- = 78.5% 4 The TS4984 has two independent power amplifiers, and each amplifier produces heat due to its power dissipation. Therefore, the maximum die temperature is the sum of the each amplifier’s maximum power dissipation. It is calculated as follows: Pdiss L = Power dissipation due to the left channel power amplifier. Pdiss R = Power dissipation due to the right channel power amplifier. Total Pdiss = P diss L + Pdiss R (W) In most cases, Pdiss L = Pdiss R, giving: Total P d iss = 2P dissL (W) or, stated differently: 4 2 V CC Total P diss = ------------------------ P out – 2P out π RL (W) 21/29 TS4984 Application Information 4.5 Decoupling the circuit Two capacitors are needed to correctly bypass the TS4984. A power supply bypass capacitor CS and a bias voltage bypass capacitor CB. CS has particular influence on the THD+N in the high frequency region (above 7 kHz) and an indirect influence on power supply disturbances. With a value for CS of 1 µF, you can expect similar THD+N performances to those shown in the datasheet. For example: l In the high frequency region, if CS is lower than 1 µF, it increases THD+N and disturbances on the power supply rail are less filtered. l On the other hand, if CS is higher than 1 µF, those disturbances on the power supply rail are more filtered. Cb has an influence on THD+N at lower frequencies, but its function is critical to the final result of PSRR (with input grounded and in the lower frequency region), in the following manner: l If C b is lower than 1µF, THD+N increases at lower frequencies and PSRR worsens. l If C b is higher than 1µF, the benefit on THD+N at lower frequencies is small, but the benefit to PSRR is substantial. Note that C in has a non-negligible effect on PSRR at lower frequencies. The lower the value of Cin, the higher the PSRR. 4.6 Wake-up time, TWU When the standby is released to put the device ON, the bypass capacitor C b will not be charged immediately. As Cb is directly linked to the bias of the amplifier, the bias will not work properly until the Cb voltage is correct. The time to reach this voltage is called wake-up time or TWU and specified in electrical characteristics table with Cb = 1 µF. If Cb has a value other than 1 µF, please refer to the graph in Figure 66 to establish the wake-up time value. Due to process tolerances, the maximum value of wake-up time could be establish by the graph in Figure 67. Figure 66: Typical wake-up time vs. Cb Tamb=25°C 600 Startup Time (ms) 500 400 Vcc=2.6V 300 200 Vcc=5V Note: 22/29 500 Vcc=2.6V 400 300 200 Vcc=5V 100 100 0 Tamb=25°C Vcc=3.3V Vcc=3.3V Max. Startup Time (ms) 600 Figure 67: Maximum wake-up time vs. Cb 0.1 1 2 3 Bypass Capacitor Cb ( F) 4 4.7 0 0.1 1 2 3 Bypass Capacitor Cb ( F) 4 4.7 Bypass capacitor Cb as also a tolerance of typically +/-20%. To calculate the wake-up time with this tolerance, refer to the previous graph (considering for example for Cb = 1 µF in the range of 0.8 µF ≤ 1 µF ≤ 1.2 µF). Application Information TS4984 4.7 Shutdown time When the standby command is set, the time required to put the two output stages in high impedance and the internal circuitry in shutdown mode is a few microseconds. Note: In shutdown mode, Bypass pin and Vin- pin are short-circuited to ground by internal switches. This allows for the quick discharge of the Cb and Cin capacitors. 4.8 Pop performance Pop performance is intimately linked with the size of the input capacitor Cin and the bias voltage bypass capacitor Cb. The size of Cin is dependent on the lower cut-off frequency and PSRR values requested. The size of Cb is dependent on THD+N and PSRR values requested at lower frequencies. Moreover, Cb determines the speed with which the amplifier turns ON. In order to reach near zero pop and click, the equivalent input constant time is: tin = (Rin + 2 kΩ) x Cin (s) with Rin ≥ 5 kΩ must not reach the τin maximum value as indicated in the graph below in Figure 68. Figure 68: τin max. versus bypass capacitor 160 Tamb=25°C Vcc=3.3V in max. (ms) 120 Vcc=2.6V 80 40 0 Vcc=5V 1 2 3 Bypass Capacitor Cb ( F) 4 By following previous rules, the TS4984 can reach near zero pop and click even with high gains such as 20 dB. Example calculation With R in = 22 kΩ and a 20 Hz, -3 db low cut-off frequency, Cin = 361 nF. So, Cin =390 nF with standard value which gives a lower cut-off frequency equal to 18.5 Hz. In this case, (Rin + 2 kΩ) x Cin = 9.36 ms. When referring to the previous graph, if Cb =1 µF and Vcc = 5 V, we read 20 ms max. This value is twice as high as our current value, thus we can state that pop and click will be reduced to its lowest value. Minimizing both Cin and the gain benefits both the pop phenomena, and the cost and size of the application. 23/29 TS4984 Application Information 4.9 Application example: Differential-input BTL power stereo amplifier The schematic in Figure 69 shows how to design the TS4984 to work in differential-input mode. For this discussion, only the left-channel amplifier will be referred to. Let: R1R = R2L = R1, R2R = R2L = R2 CinR = C inL = Cin The gain of the amplifier is: R2 G vdif = 2 × ------R1 In order to reach the optimal performance of the differential function, R1 and R2 should be matched at 1% maximum. Figure 69: Differential input amplifier configuration R2L VCC + R1L Cs IN-L VCC2 CinL VCC1 Neg. Input LEFT TS4984 VO-L Pos. Input LEFT CinL R1L IN+L + R2L LEFT Speaker 8 Ohms - StandBy StandBy Control Bias AV = -1 BypassL VO+L + R2R Pos. Input RIGHT CinR R1R IN+R + VO-R IN-R Neg. Input RIGHT CinR - R1R RIGHT Speaker 8 Ohms AV = -1 BypassR + + R2R 24/29 GND2 GND1 Cb VO+R Application Information TS4984 The value of the input capacitor CIN can be calculated with the following formula, using the -3dB lower frequency required (where FL is the lower frequency required): C IN ≈ Note: 1 (F ) 2 π R 1 FL This formula is true only if: 1 (Hz ) FCB = 2 π (R 1 + R 2 ) C B is 5 times lower than FL. The following bill of materials is provided as an example of a differential amplifier with a gain of 2 and a -3 dB lower cut-off frequency of about 80 Hz. Table 7: Example of a bill of material Designator Part Type R1L = R1R 20kΩ / 1% R2L = R2R 20kΩ / 1% CinR = CinL 100nF Cb=CS 1µF U1 TS4984 25/29 TS4984 Application Information 4.10 Demoboard A demoboard for the TS4984 is available. For more information about this demoboard, please refer to Application Note AN2049, which can be found on www.st.com. Figure 70 shows the schematic of the demoboard. Figure 71, Figure 72 and Figure 73 show the component locations, top layer and bottom layer respectively. Figure 70: Demoboard schematic C1 R1 VCC Vcc + GND C7 1u R2 GND 1 IN-L - 2 IN+L + 14 13 C2 VCC1 Neg. Input L VCC2 Cn1 U1 Cn2 C3 R3 Pos. Input L C9 100nF VO-L 16 VO+L 15 VO-R 8 VO+R 7 GND R4 Cn3 VCC Cn8 Jumper J1 1 2 3 12 Bias AV = -1 Bypass L Neg. Output L Pos. Output L + + 3 Cn4 - Standby C8 1u R7 Pos. Input R C4 R5 GND 10 IN+R + IN-R - Cn5 C5 Neg. Input R R6 9 GND Cn6 Cn7 AV = -1 Bypass R R8 26/29 GND2 GND1 5 C6 Neg. Output R + 6 11 * Pos. Output R Application Information Figure 71: Components location TS4984 Figure 72: Top layer Figure 73: Bottom layer 27/29 TS4984 5 Package Mechanical Data Package Mechanical Data 5.1 Dimensions of QFN16 package DIMENSIONS REF A A1 A3 b D D2 E E2 e K L r * * The Exposed Pad is connected to Ground. mm MIN. TYP. MAX. 0.8 0.9 1.0 0.02 0.05 0.20 0.18 0.25 0.30 3.85 4.0 4.15 2.1 3.85 2.6 4.0 2.1 2.6 0.50 0.2 0.30 0.40 0.11 5.2 Footprint recommended data A FOOTPRINT DATA mm E A B C F B D G C 28/29 D E F G 4.15 5.0 5.0 0.5 0.35 0.45 2.70 0.22 0.50 TS4984 6 Revision History Revision History Date Revision 01 Jan 2005 1 Description of Changes First Release Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 29/29