TGA2214
2 – 18 GHz 5 W GaN Power Amplifier
Product Description
Qorvo’s TGA2214 is a wideband power amplifier fabricated
on Qorvo’s QGaN15 GaN on SiC process. The TGA2214
operates from 2 – 18 GHz and achieves 5 W of saturated
output power with 14 dB of large signal gain and greater
than 20 % power-added efficiency.
This combination of wideband power, gain and efficiency
provides system designers the flexibility to improve system
performance while reducing size and cost.
The TGA2214 is matched to 50 Ω with integrated DC
blocking capacitors on both RF ports simplifying system
integration; it is ideally suited for electronic warfare, test
instrumentation and radar applications across both military
and commercial markets.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Product Features









Frequency Range: 2 – 18 GHz
POUT: 37 dBm @ PIN = 23 dBm
PAE: 20 % @ PIN = 23 dBm
Large Signal Gain (PIN = 23 dBm): 14 dB
Small Signal Gain: 22 dB
Return Loss: 7 dB
Bias: VD = +22 V, IDQ = 450 mA, VG = −2.3 V Typical
Chip Dimensions: 2.87 x 4.87 x 0.10 mm
Performance under CW operation
Functional Block Diagram
2
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
3
1
4
Applications
6
5
 Test Equipment
 Electronic Warfare
 Military Radar
Ordering Information
Data Sheet Rev. C September 2 2016
Part No.
ECCN
Description
TGA2214
3A001.b.2.c
2 – 18 GHz 5 W GaN Power
Amplifier
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TGA2214
2 – 18 GHz 5 W GaN Power Amplifier
Electrical Specifications
Test conditions unless otherwise noted: 25 °C, V D = +22 V, IDQ = 450 mA, VG = −2.3 V Typical, CW.
Parameter
Min
Typ
Max
Units
2
–
18
GHz
–
37.3
–
Output Power @ PIN = 23 dBm Frequency = 10 GHz
–
38.1
–
Frequency = 18 GHz
–
37.6
–
Frequency = 2 GHz
–
22.8
–
Frequency = 10 GHz
–
21.4
–
Frequency = 18 GHz
–
21.6
–
Frequency = 2 GHz
–
25.4
–
Frequency = 10 GHz
–
25
–
Frequency = 18 GHz
–
22
–
Frequency = 2 GHz
–
10.2
–
Frequency = 10 GHz
–
11
–
Frequency = 18 GHz
–
13.5
–
Frequency = 2 GHz
–
9
–
Frequency = 10 GHz
–
13.5
–
Frequency = 18 GHz
–
12.5
–
IM3 (POUT/Tone = 31 dBm/Tone, 100 MHz spacing)
–
-20
–
dBc
IM5 (POUT/Tone = 31 dBm/Tone, 100 MHz spacing)
–
-33
–
dBc
Small Signal Gain Temperature Coefficient
–
-0.04
–
dB/°C
Output Power Temperature Coefficient
–
-0.008
–
dBm/°C
Operational Frequency Range
Frequency = 2 GHz
Power Added Efficiency
@ PIN = 23 dBm
Small Signal Gain
Input Return Loss
Output Return Loss
dBm
%
dB
dB
dB
Recommended Operating Conditions
ConditioConditions
Parameter
Drain Voltage (VD)
Drain Current (IDQ)
Gate Voltage (VG)
Temperature (TBASE)
Value / Range
+22 V
450 mA
−2.3 V (Typ.)
−40 to 85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Data Sheet Rev. C September 2 2016
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TGA2214
2 – 18 GHz 5 W GaN Power Amplifier
Performance Plots – Small Signal
Conditions unless otherwise specified: VD = +22 V, IDQ = 450 mA, VG = −2.3 V Typical, CW.
Gain vs. Frequency vs. Temperature
Gain vs. Frequency vs. Drain Current
30
28
28
26
26
S21 (dB)
S21 (dB)
30
24
22
24
22
-40 °C
225 mA
25 °C
20
450 mA
20
85 °C
18
18
1
3
5
7
9
11
13
15
17
19
1
3
5
Frequency (GHz)
11
13
15
17
19
Input Return Loss vs. Freq. vs. Drain Current
0
-5
-5
-10
-10
S11 (dB)
S11 (dB)
9
Frequency (GHz)
Input Return Loss vs. Freq. vs. Temp.
0
7
-15
-20
-15
225 mA
-20
450 mA
-40 °C
25 °C
-25
-25
85 °C
-30
-30
1
3
5
7
9
11
13
15
17
19
1
3
5
7
Frequency (GHz)
Output Return Loss vs. Freq. vs. Temp.
11
13
15
17
19
Output Return Loss vs. Freq. vs. ID
0
-5
-5
-10
-10
S22 (dB)
S22 (dB)
0
9
Frequency (GHz)
-15
-20
-15
-20
-40 °C
-25
-25
25 °C
225 mA
450 mA
85 °C
-30
-30
1
3
5
7
9
11
13
15
17
19
1
Frequency (GHz)
Data Sheet Rev. C September 2 2016
3
5
7
9
11
13
15
17
19
Frequency (GHz)
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TGA2214
2 – 18 GHz 5 W GaN Power Amplifier
Performance Plots – Large Signal
Conditions unless otherwise specified: VD = +22 V, IDQ = 450 mA, VG = −2.3 V Typical, CW.
Output Power vs. Input Power vs. Temp.
40
Output Power vs. Input Power vs. Freq.
40
Frequency = 10 GHz
Temp = 25 °C
38
Output Power (dBm)
Output Power (dBm)
38
36
34
-40 °C
32
25 °C
85 °C
30
36
34
2 GHz
6 GHz
32
10 GHz
14GHz
30
28
18GHz
28
8
12
16
20
24
28
8
12
16
Input Power (dBm)
Output Power vs. Frequency vs. VD
40
24
28
Output Power vs. Frequency vs. Temp.
40
39
Output Power (dBm)
39
Output Power (dBm)
20
Input Power (dBm)
38
37
20 V
22 V
36
38
37
-40 °C
25 °C
36
85 °C
Temp = 25 °C, Pin = 23 dBm
Pin = 23 dBm
35
35
2
4
6
8
10
12
14
16
2
18
4
6
8
10
12
14
16
18
Frequency (GHz)
Frequency (GHz)
Output Power vs. Frequency vs. IDQ
40
Output Power (dBm)
39
38
37
225 mA
450 mA
36
Pin = 23 dBm, Temp = 25 °C
35
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Data Sheet Rev. C September 2 2016
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TGA2214
2 – 18 GHz 5 W GaN Power Amplifier
Performance Plots – Large Signal
Conditions unless otherwise specified: VD = +22 V, IDQ = 450 mA, VG = −2.3 V Typical, CW.
PAE vs. Frequency vs. VD
30
Power Gain vs. Frequency vs. VD
18
17
27
20 V
16
Gain (dB)
Power Added Efficiency (%)
Pin = 23 dBm, Temp = 25 °C
24
21
20 V
22 V
15
14
22 V
18
13
Pin = 23 dBm, Temp = 25 °C
15
12
2
4
6
8
10
12
14
16
18
2
4
6
Frequency (GHz)
PAE vs. Input Power vs. Freq.
25
10
12
14
16
18
Power Gain vs. Input Power vs. Freq.
26
Temp = 25 °C
23
24
21
22
19
Gain (dB)
Power Added Efficiency (%)
8
Frequency (GHz)
17
15
2 GHz
13
6 GHz
11
20
18
2 GHz
6 GHz
16
10 GHz
10 GHz
14GHz
14
14GHz
9
18GHz
7
12
5
10
18GHz
Temp = 25 °C
8
12
16
20
24
28
8
12
Input Power (dBm)
PAE vs. Frequency vs. Temp.
30
16
20
28
Power Gain vs. Input Power vs. Temp.
26
Frequency = 10 GHz
Pin = 23 dBm
24
27
22
Gain (dB)
Power Added Efficiency (%)
24
Input Power (dBm)
24
21
20
18
-40 °C
25 °C
16
85 °C
14
-40 °C
18
25 °C
12
85 °C
15
10
2
4
6
8
10
12
14
16
18
8
Frequency (GHz)
Data Sheet Rev. C September 2 2016
12
16
20
24
28
Input Power (dBm)
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TGA2214
2 – 18 GHz 5 W GaN Power Amplifier
Performance Plots – Large Signal
Conditions unless otherwise specified: VD = +22 V, IDQ = 450 mA, VG = −2.3 V Typical, CW.
Drain Current vs. Frequency vs. VD
1.40
20 V
18
22 V
16
1.30
Gate Current (mA)
Drain Current (A)
1.35
Gate Current vs. Frequency vs. VD
20
1.25
1.20
1.15
1.10
Pin = 23 dBm, Temp = 25 °C
14
12
10
20 V
8
22 V
6
4
1.05
2
Pin = 23 dBm, Temp = 25 °C
1.00
0
2
4
6
8
10
12
14
16
18
2
4
6
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
1.40
8
10
12
14
16
18
Frequency (GHz)
Gate Current vs. Frequency vs. Temp.
20
Pin = 23 dBm
Pin = 23 dBm
18
1.35
16
Gate Current (mA)
Drain Current (A)
1.30
1.25
1.20
1.15
-40 °C
1.10
25 °C
-40 °C
12
25 °C
10
85 °C
8
6
4
85 °C
1.05
14
2
1.00
0
2
4
6
8
10
12
14
16
18
2
4
6
Frequency (GHz)
Drain Current vs. Input Power vs. Freq.
1.4
12
14
16
18
Temp = 25 °C
18
16
Gate Current (mA)
1.2
Drain Current (A)
10
Gate Current vs. Input Power vs. Freq.
20
Temp = 25 °C
1.3
8
Frequency (GHz)
1.1
1.0
2 GHz
0.9
6 GHz
0.8
10 GHz
0.7
14GHz
0.6
18GHz
14
12
2 GHz
10
6 GHz
8
10 GHz
6
14GHz
18GHz
4
0.5
2
0.4
0
8
12
16
20
24
28
8
Input Power (dBm)
Data Sheet Rev. C September 2 2016
12
16
20
24
28
Input Power (dBm)
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TGA2214
2 – 18 GHz 5 W GaN Power Amplifier
Performance Plots – Linearity
Conditions unless otherwise specified: VD = +22 V, IDQ = 450 mA, VG = −2.3 V Typical, CW.
Intermodulation Distortion vs. Frequency
0
IM3 vs. Output Power vs. Frequency
0
Pout/tone = 31 dBm, 100 MHz Tone Spacing
Temp = 25 °C
-5
100 MHz Tone Spacing, Temp = 25 °C
-10
2 GHz
-20
-15
IM3 (dBc)
IM (dBc)
-10
-20
-25
6 GHz
10 GHz
-30
14GHz
18GHz
-40
-30
-50
IM5
IM3
-35
-40
-60
2
4
6
8
10
12
14
16
18
5
10
15
Frequency (GHz)
25
30
35
IM5 vs. Output Power vs. Frequency
0
100 MHz Tone Spacing, Temp = 25 °C
-10
IM5 (dBc)
20
Output Power per Tone (dBm)
2 GHz
-20
6 GHz
-30
10 GHz
14GHz
-40
18GHz
-50
-60
-70
-80
-90
-100
5
10
15
20
25
30
35
Output Power per Tone (dBm)
2nd Harmonic vs. Output Power vs. Freq.
0
3rd Harmonic vs. Output Power vs. Freq.
0
Temp = 25 °C
Temp = 25 °C
-10
-10
3f0 Output Power (dBc)
2f0 Output Power (dBc)
-5
-15
-20
-25
2 GHz
6 GHz
-30
10 GHz
-35
14GHz
-20
-30
-40
2 GHz
-50
6 GHz
10 GHz
-60
-40
14GHz
-45
-70
15
20
25
30
35
40
15
Fundamental Ouptut Power (dBm)
Data Sheet Rev. C September 2 2016
20
25
30
35
40
Fundamental Output Power (dBm)
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TGA2214
2 – 18 GHz 5 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Thermal Resistance (θJC)
(1)
Channel Temperature (TCH) (Under RF drive)
Median Lifetime (TM)
TBASE = 85 °C, VD = +22 V (CW)
At Freq = 9.5 GHz, PIN = 23 dBm:
IDQ = 450 mA, ID_Drive = 1.28 A
POUT = 38.5 dBm, PDISS = 21 W
Value
Units
7
°C/W
232
°C
5.0E+7
Hrs
Notes:
1.
Thermal resistance measured to back of carrier plate. MMIC mounted on 20 mils CuMo carrier using 80/20 AuSn.
Median Lifetime
Test Conditions: VD = +28 V; Failure Criteria = 10 % reduction in ID_MAX during DC Life Testing
(QGaN15) Median Lifetime vs. TCH
1E+15
Median Lifetime, TM (Hours)
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
FET16
1E+04
75
100
125
150
175
200
225
250
275
Channel Temperature, TCH (C)
Dissipated Power vs. Freq. vs. Temp.
24
Temp
Pin
= 23
= 25
dBm,
°C CW
22
PDISS (W)
20
18
16
-40 °C
14
25 °C
85 °C
12
10
2
4
6
8
10
12
14
16
18
Input Power (dBm)
Data Sheet Rev. C September 2 2016
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TGA2214
2 – 18 GHz 5 W GaN Power Amplifier
Applications Information and Pad Layout
VG
VG1
VG2
C3
R1
10 Ohms
100 pF
C4
10000 pF
R2
100 pF
10 Ohms
10000 pF
C6
C5
10 µF
10 µF
RFOUT
RFIN
VD1
VD2
R3
10 Ohms
C1
C2
1000 pF
1000 pF
R4
10 Ohms
C7
C8
10 µF
10 µF
VD
Bias Up Procedure
1. Set ID limit to 1.4 A, IG limit to 20 mA
2. Apply −5 V to VG
3. Apply +22 V to VD; ensure IDQ is approx. 0 mA
4. Adjust VG until IDQ = 450 mA (VG ~ −2.3 V Typ.).
5. Turn on RF supply
Data Sheet Rev. C September 2 2016
Bias Down Procedure
1. Turn off RF supply
2. Reduce VG to −5 V; ensure IDQ is approx. 0 mA
3. Set VD to 0 V
4. Turn off VD supply
5. Turn off VG supply
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TGA2214
2 – 18 GHz 5 W GaN Power Amplifier
Assembly Drawing
MMIC bonding detail:
Bill of Materials
Reference Des.
C1, C2
C3, C4
C5, C6, C7, C8
R1, R2, R3, R4
Value
Description
1000 pF
Cap, +50 V, 10 %, SLCC
100 pF // 10000 pF Cap, +50 V, 20 %, X7R, MLCC
Cap, 1206, 20 %, +50 V, X5R
10 F
10 Ohms
Res, 0402, 5 %
Data Sheet Rev. C September 2 2016
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Manuf.
Part Number
Presidio
Presidio
Various
Various
MSA3535B102K2H5C-F
MVB3030X103M2H5C1F
–
–
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TGA2214
2 – 18 GHz 5 W GaN Power Amplifier
Mechanical Information
3
2
1
5
6
4
Units: millimeters
Thickness: 0.10
Die x,y size tolerance: ± 0.050
Ground is backside of die
Bond Pad Description
Pad No.
Symbol
Pad Size (mm)
Description
1
RF IN
0.150 x 0.200
2
VG1 (1)
0.200 x 0.100
3
VG2 (1)
0.200 x 0.200
4
RF OUT
0.150 x 0.200
5
VD2 (2)
0.400 x 0.200
6
VD1 (2)
0.300 x 0.125
RF Input; matched to 50 Ω, DC blocked
Gate voltage for stage 1, bias network is required; see Application
Circuit on page 9 as an example.
Gate voltage for stage 2, bias network is required; see Application
Circuit on page 9 as an example.
RF Output; matched to 50 Ω, DC blocked
Drain voltage for stage 2, bias network is required; see Application
Circuit on page 9 as an example
Drain voltage for stage 1, bias network is required; see Application
Circuit on page 9 as an example
Notes:
1) VG1 & VG2 may be tied together off-chip.
2) VD1 & VD2 may be tied together off-chip
Data Sheet Rev. C September 2 2016
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TGA2214
2 – 18 GHz 5 W GaN Power Amplifier
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300 C to 3 – 4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonic are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Data Sheet Rev. C September 2 2016
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TGA2214
2 – 18 GHz 5 W GaN Power Amplifier
Absolute Maximum Ratings
Value / Range
+29.5 V
−5 to 0 V
Maximum Gate Current (mA)
Parameter
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current
- 1st Stage (ID1)
- 2nd Stage (ID2)
Gate Current:
- 1st Stage (IG1)
- 2nd Stage (IG2)
Power Dissipation (PDISS), 85 °C
Input Power, CW, 50 Ω, 85 °C
(PIN)
Input Power, CW, VSWR 3:1,
85 °C (PIN)
Channel Temperature (TCH)
Mounting Temperature
(30 Seconds)
Storage Temperature
0.5 A
1.0 A
See IG_MAX plot
30 W
31 dBm
31 dBm
IG_MAX vs. TCH vs. Stage
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
Total Ig_max
125
275 °C
135
145
155
165
Stage1
175
185
Stage2
195
205
215
225
Channel Temperature (°C)
320 °C
−55 to +150 °C
Operation of this device outside the parameter ranges given above
may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied.
Data Sheet Rev. C September 2 2016
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TGA2214
2 – 18 GHz 5 W GaN Power Amplifier
Handling Precautions
Parameter
Rating
Standard
ESD – Human Body Model (HBM)
TBD
JEDEC Standard JESD22 A114
Caution!
ESD-Sensitive Device
Solderability
Compatible with the latest version of J-STD-020, Lead free solder, 260 °C
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following
attributes:







Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Qorvo Green
Pb
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo:
Tel: 1-844-890-8163
Web: www.qorvo.com
mail: info-sales@qorvo.com
For technical questions and application information: Email: info-products@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2016 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. C September 2 2016
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