FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
General Description
„ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
This
„ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
Semiconductor’s advanced PowerTrench® process that has
„ Extended VGSS range (-25V) for battery applications
been especially tailored to minimize the on-state resistance.
„ HBM ESD protection level of ±3.8KV typical (note 3)
This device is well suited for Power Management and load
„ High performance trench technology for extremely low rDS(on)
switching applications common in Notebook Computers and
„ High power and current handling capability
Portable Battery Packs.
P-Channel
MOSFET
is
produced
using
Fairchild
„ Termination is Lead-free and RoHS compliant
D
D
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
D
G
S
S
Pin 1
S
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
TA = 25°C
(Note 1a)
-Pulsed
PD
Ratings
-30
Units
V
±25
V
-8.8
-50
Power Dissipation
TA = 25°C
(Note 1a)
2.5
Power Dissipation
TA = 25°C
(Note 1b)
1.0
EAS
Single Pulse Avalanche Energy
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 4)
A
W
24
mJ
-55 to +150
°C
Thermal Characteristics
RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
25
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDS4435BZ
Device
FDS4435BZ
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
Package
SO-8
1
Reel Size
13’’
Tape Width
12mm
Quantity
2500units
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
April 2009
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250PA, VGS = 0V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
-30
V
ID = -250PA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -24V, VGS = 0V
1
PA
IGSS
Gate to Source Leakage Current
VGS = ±25V, VDS = 0V
±10
PA
-3
V
mV/°C
-21
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250PA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250PA, referenced to 25°C
6
VGS = -10V, ID = -8.8A
16
20
rDS(on)
Static Drain to Source On Resistance
VGS = -4.5V, ID = -6.7A
26
35
VGS = -10V, ID = -8.8A, TJ = 125°C
22
28
VDS = -5V, ID = -8.8A
24
gFS
Forward Transconductance
-1
-2.1
mV/°C
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -15V, VGS = 0V,
f = 1MHz
f = 1MHz
1385
1845
275
365
pF
pF
230
345
pF
:
4.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
VDD = -15V, ID = -8.8A,
VGS = -10V, RGEN = 6:
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to -10V
Qg
Total Gate Charge
VGS = 0V to -5V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -15V,
ID = -8.8A
10
20
ns
6
12
ns
30
48
ns
12
22
ns
28
40
nC
16
23
nC
5.2
nC
7.4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = -8.8A
(Note 2)
IF = -8.8A, di/dt = 100A/Ps
-0.9
-1.2
V
29
44
ns
23
35
nC
NOTES:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
2
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
50
40
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -10V
VGS = -5V
VGS = -4.5V
30
VGS = -4V
20
VGS = -3.5V
10
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
3.0
VGS = -4.5V
2.5
VGS = -4V
1.5
VGS = -10V
1.0
0.5
0
4
10
20
30
40
50
-ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
60
ID = -8.8A
VGS = -10V
1.2
1.0
0.8
0.6
-75
-50
-25
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
ID = -8.8A
rDS(on), DRAIN TO
1.4
0
25
50
75
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = -5V
2.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
50
40
TJ = 125oC
30
20
TJ = 25oC
10
100 125 150
2
o
TJ, JUNCTION TEMPERATURE ( C)
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
50
100
-IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS = -3.5V
3.5
40
VDS = -5V
30
20
TJ = 150oC
10
TJ = 25oC
TJ =-55oC
0
1
2
3
4
1
0.1
TJ = 25oC
TJ = 150oC
0.01
TJ = -55oC
0.001
0.0001
0.0
5
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
VGS = 0V
10
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
-VGS, GATE TO SOURCE VOLTAGE(V)
10
4000
ID = -8.8A
Ciss
8
CAPACITANCE (pF)
VDD = -10V
6
VDD = -15V
VDD = -20V
4
2
1000
Coss
Crss
f = 1MHz
VGS = 0V
0
0
5
10
15
20
25
100
0.1
30
1
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
-4
10
-Ig, GATE LEAKAGE CURRENT(A)
-IAS, AVALANCHE CURRENT(A)
20
10
TJ = 25oC
TJ = 125oC
VDS = 0V
-5
10
TJ = 125oC
-6
10
-7
10
TJ = 25oC
-8
10
-9
1
0.01
0.1
1
10
10
30
0
5
10
15
20
25
30
-VGS, GATE TO SOURCE VOLTAGE(V)
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
100
10
8
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
30
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -10V
6
VGS = -4.5V
4
2
100us
10
1ms
10ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
100ms
SINGLE PULSE
TJ = MAX RATED
1s
10s
DC
o
RTJA = 125 C/W
o
TA = 25oC
RTJA = 50 C/W
0.01
0.1
0
25
50
75
100
125
150
o
TA, AMBIENT TEMPERATURE ( C)
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
1
10
80
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe
Operating Area
4
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
P(PK), PEAK TRANSIENT POWER (W)
1000
VGS = -10 V
SINGLE PULSE
o
RTJA = 125 C/W
o
TA = 25 C
100
10
1
0.5
-4
10
-3
-2
10
-1
10
10
1
10
100
1000
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZTJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
o
RTJA = 125 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
5
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used herein:
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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