１．M. Konagai
R&D Issues
２．K. Yamamoto 15 min presentation
3. Y. Ohshita
4. Discussion
15 min presentation
世界の太陽電池製造設備の今後の展開
Last Updated 2010‐10‐13, Average
PolySilicon, Unit: US$ / Kg
62.50
Solar Wafer Weekly Spot Price , Unit: USD 156mm Square Poly Wafer, 3.68
156mm Square Mono Wafer , 3.88
Solar Cell Weekly Spot Price , Unit: US$ Solar Cell Price Per WaE , 1.40
156mm Square Poly Cell , 5.46
156mm Square Mono Cell , 5.85
Solar Panel / Solar Module Weekly Spot Price , Unit: US$ Silicon Module Per WaE , 1.70
ThinFilm Module Per WaE , 1.308
Solar Panel / Solar Module 120W+ Weekly All Brands, 2.557
Retailer Price , Unit: US$ / WaE BPSolar, 2.263 Evergreen, 2.478 Kyocera, 2.601 REC, 2.578 Sharp, 2.822
Japanese PV R&D Roadmap (PV2030+）
2002
2007
2010
~ \50/kWh
Power generation cost
\46/kWh
Establishment of mass
production framework for
crystalline Si, thin-film Si,
and CIS solar cells
2017 2020
2025
Technological
development
ahead of
schedule,
considering the
period of adopting
mass production
2050
2030
Introduction of ultrahigh efficiency (40%)
solar cells with new
theories/structures,
responding to diverse
applications
\23/kWh
\14/kWh
Technology innovation
for higher
performance,
\7/kWh
\7/kWh
or less
2030 (2025)
2050
e.g., introduction of
new materials
Target
(completion of
development)
Power
generation cost
2010 or later
Equivalent to
household
electricity
(\23/kWh)
2020 (2017)
Equivalent to
commercial
electricity
(\14/kWh)
Used as general
Equivalent to
power source
general power
(\7/kWh
source (\7/kWh)
or less)
7
2010
material
2017
2025
cost
2050
module
(%)
cell
(%)
module
(%)
cell
(%)
module
(%)
cell
(%)
CIGS
15
20
18
25
25
30
50
30(40)
III-V
28
40
35
45
40
50
50
30(40)
dye
8
12
10
15
15
18
<40
7
10
12
15
15
<40
organic
（yen/
W)
life
(y)
module
Classification
Effic.
Area
(%)
(cm2)
Voc
Jsc
FF
(V)
(mA/cm2)
(%)
Test Center
(and date)
Description
Si(crystalline, FZ)
25.0±0.5
4.00(da)
0.705
42.7
82.8
Sandia(3/99)
UNSW PERL
Si(multicrystalline)
20.4±0.5
1.002(ap)
0.664
38.0
80.9
NREL(5/04)
FhG-ISE
Si(thin-film transfer)
16.7±0.4
4.017(ap)
0.645
33.0
78.2
FhG-ISE(7/01)
U.Stuttgart (45mm thick)
Si(thin film submodule)
10.5±0.3
94.0(ap)
0.492
29.7
72.1
FhG-ISE(8/07)
CSG Solar, 1-2mm on
Glass
Si(crystalline)
22.9±0.6
778(da)
5.60
3.97
80.3
Sandia(9/96)
UNSW/Gochermann
Si(large crystalline)
20.3±0.6
16300(da)
66.1
6.35
78.7
Sandia(8/07)
SunPower
Si(multicrystalline)
15.5±0.4
1017(ap)
14.6
1.37
78.6
Sandia(10/94)
Sandia/HEM
Si(thin film submodule)
8.2±0.2
661(ap)
25.0
0.320 A
68.0
Sandia(7/02)
Pacific Solar, 1-2mm on Glass
Si (MCZ crystalline)
24.7±0.5
4.0(da)
0.704
42.0
83.5
Sandia(7/99)
UNSW PERL
SHE MCZ substrate
Si (moderate area)
23.9±0.5
22.1(ap)
0.704
41.9
81.0
Sandia(8/96)
UNSW PERL
Si (large FZ crystalline)
22.0±0.7
147.4(t)
0.677
40.3
80.6
FhG-ISE(3/06)
Sunpower n-type sub.
Si (large crystalline)
23.0±0.6
100.4(t)
0.729
39.6
80.0
AIST(2/08)
Sanyo HIT, n-type
substrate
Si (large multicrystalline)
18.7±0.6
217.4(t)
0.639
37.7
77.6
AIST(2/08)
Mitsubishi Electric.
honeycomb
Target by 2030 plus: Module efficiency 25%, Cell efficiency (30%),
Cell thickness 50-100 mm
Record high efficiency of 25 %, FZ Si (20 nm) (20 nm) ＊Device simulaXon program (PC‐1D)
bulk lifeXme：1.1ms S (n surface) :300cm/s、S(p surface): 400cm/s ARC Photovoltaics Center of Excellence, 2009 Annual Report
Surface
recombination
Recombination at
Electrode/ n-Si
Passivation film
n
p
Passivation thin-films
1.  Thermal CVD SiO2
2.  PECVD a-SiN for poly-Si cell
Bulk recombination
Auger recombination is inevitable
p+
・low defect density at the interface
Passivation film
＋
＋
＋
＋
＋
＋
Deposition of passivation films at
low substrate temperatures
n-type
c-Si
hole
−
−
−
−
−
−
a-Si (hetero structure）
・Control of band line-up using fixed
charge
electron
1.  positive charge for n-Si
p-type
c-Si
a-SiN
2. Negative charge for p-Si
a-Al2O3
a-SiN
n+-Si
p-Si(∼
300mm)�
p-Si(100mm)� p -Si�
+
p+-Si
Conventional BSF
Point contact
G..P.Willeke,”The Crystalline
Silicon Solar Cell ”,
19th EU-PVSEC, June(2004)
IEEE PVSC, Hawaii , 20- 25, June, 2010
Peter Cousins of SunPower gave an overview of
the latest SunPower products and manufacturing.
Their current capacity is 500 MW/year with a new
1.4 GW fab being constructed in Malaysia.
Generation III modules were reported that
achieved 20.5% despite a shorted cell. Without
the damaged cell it was estimated that the module
would have been 21% efficient. A single
production cell measured 24.2% efficient.
HIT cell
-  High efficiency by excellent surface passivation with a-Si layers
-  Less thermal stress through low temperature process (£ 200oC)
- Advantage in high temperature performance
TCO related issues
optical confinement
control of Haze
p/TCO contact
glass
TCO(SnO2, ZnO）
top cell（a-Si, a-SiC, a-SiO）
interlayer Widegap materials
high quality a-Si (C, O, N)
eliminating SW effect
Development of interlayer
conducitvity, refractive index
tunneling junction
mc-Si related issues
large area, high rate deposition
3-10nm/s, 4-5 cm2
Narrow gap materials
a-SiGe, mc-SiGe
ARC Back reflector
alternative of Ag
back contact Device design: high voltage type, high current type
Multijunction structure : a-Si/mc-Si/mc-SiGe, a-Si/a-SiGe/mc-Si etc.
Novel materials, structures: four junctions, quantum dots, hetero-junction etc.
Official data on conversion efficiency published in Progress in Photovoltaics
a-Si single
10.1±0.3
1.036
0.886
16.75
67.0
NREL(7/09)
Oerlikon, Neuchatel Univ
nano-Si single
10.1±0.2
1.199
0.539
24.4
76.6
JQA(12/97)
Kaneka(2mm)
a-Si/mc-Si 13.4
a-Si/a-Si/a-SiGe 12.1±0.7
a-Si/nc-Si/nc-Si 12.5±0.7
a-Si/a-SiGe/a-SiGe
10.4±0.5
3,827
136.7
510(mA)
73.7
AIST(10/05)
Kaneka, Initial
0.27
2.297
7.56
69.7
NREL(10/96)
USSC,stabilized
0.27
2.010
9.11
68.4
NREL(3/09)
USSC, stabilized
4.353
3.285(A)
NREL(10/98)
USSC, stabilized
905
66.0
R&D- level conversion efficiency reported by each research institute
a-Si single
10.09
1.047
0.876
17.28
0.665
NREL(07/09)
Oerlikon, stabilized
9.4
0.25
0.526
25.3
0.71
-
AIST
a-Si/mc-Si
11.9
1.2
1.34
12.9
0.685
-
Oerlikon, stabilized
a-Si/mc-Si
14.7
1
1.41
14.4
0.728
-
Kaneka, initial
a-Si/mc-Si
13.5
4141
137
0.536(A)
0.706
-
Kaneka, initial
a-Si/mc-Si
13.2
1
1.38
12.8
0.746
-
Sharp, initial
a-Si/mc-Si triple
15.0
1
2.28
8.93
0.735
-
Kaneka, initial
a-Si/a-SiGe/a-SiGe
14.6
0.25
2.357
8.57
0.723
-
USSC, initial
a-Si/a-SiGe/a-SiGe
13.0
0.25
2.294
8.27
0.684
-
USSC,stabilized
a-Si/a-SiGe/nc-Si
15.39
0.25
2.239
9.13
0.753
-
USSC, initial
a-Si/a-SiGe/nc-Si
13.31
0.25
-
USSC,stabilized
mc-Si single
Micromorph champion cell
New specialty glass by Corning
Without anti-reflective coating
Cell design and fabrication by
Oerlikon Solar-Lab
After 1000h of light-soaking
Stabilized efficiency : 11.9%
Independently confirmed by NREL
With anti-reflective coating:
> 12% stabilized efficiency in reach
for Micromorph tandem technology
J. Bailat et al., 25th EU PVSEC 2010
IWTFSSC-3 Nagasaki, Oct. 2010