n files will not be published on the website. Please contact the author directly for needi About CSSC4 Call for papers Agenda Registration Accommodation Agenda Transportation Tours Agenda Program DAY 1, OCTOBER 27 08.00 08.40-09.00 Opening ceremony Session 1: Solar Cells Invited Speaker – Dr. N. P. Harder ( ISFH, Germany) 09.00-09.30 Strategy Considerations of Silicon Solar Cell Development at ISFH N. P. Harder ISFH, Germany 09.30-10.00 Invited Speaker – Dr. A. W. Weeber (ECN, Netherlands) Recent developments on low -cost industrial processing of n -type silicon solar cells A. W. Weeber, A. R. Burgers, N. Guillevin, A.J. Carr, P.C. Barton, J. Xiong , G. Li, W. Song , H. An , Z. Hu , P.R. Venema, A.H.G. Vlooswijk, L. J. Geerligs 10.00-10.15 Structural properties of Ag -contacts/Si-substrate for low cost and efficient solar cells C. H. Lin*, S. P. Hsu, B. C. Chen, Y. C. Wang, T. Y. Wang, and W. C. Hsu 10.15-10.30 Novel texture with weighted reflectance less than 5% C. A. Lu, Y. H. Huang, S. T. Chan, C. Y. Huang, Y. Y. Chen, W. S. Ho, and C. W. Liua* 10.30-10.55 Break 10.55-11.10 High open circuit voltage (>700 mV) silicon heterojunction solar cell preparation using rf plasma deposited a -Si:H films C. S. Liu, I. W. Chen, C. Y. Wu, and L. S. Hong* 11.10-11.25 Enhanced conversion efficiency of crystalline silicon solar cell with ladder -shaped nanorod array M. A. Tsai, H. C. Chen, P. C. Tseng, P. C. Yu*, and H. C. Kuo 11.25-11.40 Program Registration/Reception Fabrication of the highly -efficiency thin films solar cell by VHF -PECVD C. Y. Liu, Y. S. Lin, C. H. Chu, S. Y. Lien, C. F. Chen, and P. C. Tsai Invited Speaker Contact 11.40 Lunch Session 2: Feedstock 13.30-14.00Invited Speaker - Dr. S. Grandum (Elkem Solarm, Norway) Requirements for compensated SoG Si feedstock to be used in high performance solar cells S. Grandum, A. K. Søiland, E. Enebakk, and K. Friestad 14.00-14.30 Invited Speaker – Prof. G. Tranell (NTNU, Norway) Silicon Feedstock for Solar Cells – Availability, Quality Criteria and Future Production Routes G. Tranell, M. D. Sabatino, and M. Tangstad 14.30-14.45High High performance of UMG silicon obtained via the photosil process J. Kraiem, B. Drevet, F. Cocco, N. Enjalbert, S. Dubois, D. Camel, D. Grosset-Bourbange, J. Degoulange, R.Einhaus, D. Pelletier, and T. Margaria 14.45-15.10Break 15.10-15.25Electrochemical Electrochemical deposition of silicon in molten salts G. M. Haarberg, S. Tang, A. M. Martinez, K. S. Osen, H. Gudbrandsen, S. Rolseth, O. E. Kongstein, C. Jing, and S. Wang 15.25-15.40Study Study of pellets and lumps as raw material for silicon production E. Dal Martello, G. Tranell, S. Gaal, O. Raaness, M. Tangstad, R. Larsen, L. Arnberg 15.40 Poster section 18.00 Bus will leave from NTU to Taipei 101 18.30 Banquet 21.00 Bus will leave from Taipei to 101 NTU DAY 2, OCTOBER 28 Session 3: Crystallization – Part 1 09.00-09.30 Invited Speaker – Prof. K.Nakajima (Kyoto Univ., Japan) High efficiency solar cells obtained from small size ingots with 30 cmφ by controlling the distribution and orientation of dendrite crystals using the dendritic casting method K. Nakajima*, K. Kutsukake, K. Fujiwara, N. Usami, S. Ono, and I. Yamasaki 09.30-10.00 Invited Speaker – Prof. K. Kakimoto (Kyushu Univ., Japan) Control of impurity in crystalline silicon for PVs K. Kakimoto 10.00-10.30 Invited Speaker – Dr. C. Kudla (Leibniz Institute, Germany) Numerical studies and experimental results on crystal growth of PV silicon and germanium in heater -magnet -modules C. Kudla, N. Dropka, F. M. Kiessling, C. F. Rotsch, P. Rudolph 10.30-10.55 Break 10.55-11.10 Process modeling in silicon crystal growth J. Seebeck, J. Friedrich,and T. Jung 11.10-11.25 Evolution of 3D fluid flow pattern during directional solidification of SoG Si ingots for different mould geometries S. Gouttebroze* and M. M’Hamdi 11.25-11.40 Crystal growth control of improved mc-Si quality through seed growth and multiple heat zones and heat sink design A. Jouini*, N. Coudurier, D. Ponthenier, D. Camel, N. Enjalbert, S. Dubois 11.40-12.00 Effect of heater transfer rate on maximum dislocation density in multicrystalline silicon grown by the travelling heater method (THM) S. Hisamatsu, S. Nakano, X. Chen, Y. Kangawa, and K. Kakimoto 11.40 Lunch Session 4: Crystallization – Part 2 13.30-14.00 Invited Speaker - Prof. C. W. Lan (NTU, Taiwan) Process development of directional solidification for high -quality multi crystalline photovoltaic silicon T. F. Lee, H. C. Huang, Y. L. Tsai, C. Hsu, C.W. Lan* 14.00-14.30 Invited Speaker – Prof. J. Friedrich (Fraunhofer IISB, Germany) Factors influencing the formation of SiC and Si3N4 precipitates in directional solidification of multi -crystalline silicon J. Friedrich 14.30-15.00 Invited Speaker – Prof. L. Arnberg (NTNU, Norway) Comparison of ingot - and solar cell properties between a compensated and an electronic grade silicon feedstock C. Modanese, M. D. Sabatino, A. K. Søiland, and L. Arnberg 15.00-15.25 Break 15.25-15.40 Float Zone (FZ) silicon: a potential material for advanced commercial solar cells ? H. J. Rost, A. Luedge, H. Riemann, F. Kirscht, and F. W. Schulze 15.40-16.55 Grain structure of photovoltaic silicon ingots T. Duffar, A. Nadri, B. Gallien, M. Beaudhuin, Y. Du Terrail Couvat, K. Zaidat 16.55-17.10 Influence of travelling magnetic field on the crystallization of multicrystalline Silicon A. Nouri, Y. Delannoy, K. Zaidat* 18.00 Bus will leave from NTU to Taipei World Trade Center 18.30 Banquet 21.00 Bus will leave from Taipei World Trade Center to hotel DAY 3, OCTOBER 29 Session 5: Material Properties 08.40-09.10 Invited Speaker - Prof. N. Usami (Tohoku Univ., Japan) Impact of coherency of grain boundaries in Si multicrystals on material properties to affect solar cell performance N. Usami, I. Takahashi, K. Kutsukake, and K. Nakajima 09.10-09.40 Invited Speaker – Prof. M. Tajima (ISAS, JAXA, Japan) Differentiation of deep -level photoluminescence due to dislocations and oxygen precipitates in multicrystalline Si M. Tajima, Y. Iwata, M. Ikebe, F. Okayama, and H. Toyota 09.40-09.55 Mechanisms for Formation of Dislocations near the Bottom of a multicrystalline silicon ingot I. Odland* and G. Stokkan 09.55-10.10 Recombination activity of dislocations in multicrystalline silicon T. Brynjulfsen and G. Stokkan 10.10-10.25 Light induced degradation in p-type germanium -doped Czochralski silicon P. Wang, X. Yu, and D. Yang 10.25-10.50 Break Session 6: Defect Engineering 10.50-11.20 Invited Speaker - Prof. T. Buonassisi (MIT, USA) Defect Engineering in Multicrystalline Silicon: From Descriptive to Predictive D. P. Fenning, J. Hofstetter, M. I. Bertoni, S. Castellanos, A. E. Fecych, D. M. Powell, M. L. Vogl, B. K. Newman, C. Cañizo, T. Buonassisi 11.20-11.35 Systematic investigation on dislocation formation during directional solidification of multi -crystalline silicon C. Reimann, M. Trempa, E. Meissner, J. Friedrich 11.35-11.50 Study of defects in multicrystalline silicon via metallurgical method W. Ma, Y. Jiang, X. Mei, W. Kuixian, B. Yang, Y. Dai 11.50-12.05 Structural properties of germanium -doped multicrystalline silicon M. P. Bellmann, T. Kaden, D. Kressner-Kiel, G. Minozzi, J. Friedl, T. Dörschel, H. J. Möller, L. Arnberg 12.05 Closing ceremony 12.20 Lunch 13.30 Bus will leave from hotel to Museum 14.00 Guided tour at the National Palace Museum Poster Session Physico -chemical phenomena involved in the grain structure of multicrystalline photovoltaic silicon ingots A. Nadri, Yves Du Terrail Couvat, T. Duffar* Effects of initial supercooling condition on the quality of multi -crystalline solar silicon grown by directional solidification T.F. Li, W. C. Hsu, and C. W. Lan* Regulating electron beam power to control solidification rate of silicon ingot F. J. Fong, S. Tsao, W. P. Tu, M. Y. Sung Refining metallurgical grade silicon with Al -Si system using powder metallurgy technique X. Gu, X. Yu and D. Yang* Material properties and solar cell performances of chromium contaminated compensated silicon M. D. Sabatino, M. Hystad*, C. Modanese, L. Arnberg Enhanced Omnidirectional Power Conversion Efficiency for Silicon Solar Cells Utilizing Indiun-Tin-Oxide Nano-Whiskers C. H. Chang, M. H. Hsu, W. L. Chang, W. C. Sun, and P. Yu* Light-induced degradation of silicon solar cell and the deactivation treatment methods T. Y. Wang*, Y. J. Chen, C. S. Kou, C. H. Lin High performance light trapping structure for the thin film photovoltaic devices Y. C. Chang, J. Y. Chu*, C. T. Chen, Y. H. Yeh, and J. K. Wang Surface texture simulation of mono-crystalline solar cell by gradient refractive -index profile simulation C. Y. Peng*, R. B. Huang, and J. H. Chao Planar solar concentrators of solar spectrum by light guided film encapsulation C. Y. Peng*, C. T. Huang, F. M. Lin, and R. C. Lai Crystalline silicon solar cells with hierarchical surface structure D. Dimitrov, C. H. Lin, and W. C. Hsu High quality surface passivation for n -type c -Si wafers via rf -PECVD deposited a -Si:H thin films C. S. Liu, C. Y. Wu, and L. S. Hong* Optimization of solar cell screen printing process W. C. Hsu, C. H. Lin, B. M. Chen, Y. C. Wang, and Y. C. Huang A new viametalized processing for MWT solar cells S. Y. Chen, C. P. Huang, B. C. Chen, S. P. Hsu, W. C. Hsu, and C. H. Du Degradation of photovoltaic modules using conductive adhesive H. H. Hsieh*, W. K. Lee., and J. R. Chen. Inverted pyramid texturisation with electroless deposition and etching for multicrystalline solar cell D. C. Wu, D. Z. Dimitrov, C. H. Lin, C. H. Du, W. C. Hsu, W. H. Lu, C. W. Lan Combo nitric acid clean with double-layer SiNx antireflection coating in the p-type c -Si solar cell manufacturing C. H. Lung*, C. H. Du, C. H. Lin, and W. C. Hsu Nano-pores antireflection coating for efficiency enhancement of rear junction n -nype silicon photovoltaic cells H. Y. Liu, W. L. Chang*, T. Y. Wang, C. H. Lin, and C. W. Lan Performance of polycrystalline photovoltaic strings with various soldering temperatures H. H. Hsieh High -quality multi -crystalline silicon (mc -Si) for solar cell grown by directional solidification using notched -crucible T.F. Li, W. C. Hsu, and C.W. Lan* Purification of metallurgical silicon materials for solar cell application T. Y. Wang*, W. L. Chang, S. Tsao, C. H. Lin, C. L. Sun, C. W. Lan In-line geometrical characterization system for PV -wafer and cell process E. Takahashi, M. Kajita*, K. Hayashi, Y. Fukumoto, S. Sumie, and H. Hashizume Fabrication of aligned Silicon nanowire arrays for solar cell applications Shih-Wei Hung*, Wei-Chih Hsu, Ching-Hsi Lin, Cheng-Hsun Du, Sung-Yu Chen, Wei-Lun Chang, TengYu Wang Copyright © 2010 Industrial technology research institute all right reserved.