MC13851 General Purpose Low Noise Amplifier with ByPass Switch

Freescale Semiconductor

Data Sheet: Advance Information

MC13851

General Purpose Low Noise

Amplifier with Bypass Switch

Document Number: MC13851

Rev. 2.0, 12/2010

MC13851

Package Information

Plastic Package:

2.0

MLPD-8

×

2.0

×

0.6 mm

Case: 2128-01

Device

MC13851EP

Ordering Information

Device Marking

851

Package

MLPD-8

1 Introduction

The MC13851 is a cost-effective, high IP3 LNA with low noise figure. This is the smaller leadless package version of the MC13821 device. The MC13851 includes an integrated bypass switch to preserve high input intercept performance in variable signal strength environments and boosts dynamic range. On-chip bias circuitry offers low system cost. The input and output match are external to allow maximum design flexibility. An external resistor is used to set device current which allows balancing required linearity with low current consumption. Gain is optimized for applications greater than 1000 MHz. The

MC13851 is fabricated with the advanced RF BiCMOS process using the eSiGe:C module and is available in the

2

×

2 mm MLPD-8 leadless package, offering a small, low height, easy-to-solder solution for applications with tight printed circuit board placement requirements.

Contents:

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Electrical Specifications . . . . . . . . . . . . . . . . . . .3

3 Application Information . . . . . . . . . . . . . . . . . . . . 9

4 Printed Circuit and Bill of Materials . . . . . . . . . 20

5 Scattering and Noise Parameters . . . . . . . . . . . 22

6 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

7 Product Documentation . . . . . . . . . . . . . . . . . . . 33

8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . 33

This document contains information on a new product. Specifications and information herein are subject to change without notice.

© Freescale Semiconductor, Inc., 2006–2010. All rights reserved.

2

Introduction

1.1

Features

The MC13851 is intended for applications from 1000 MHz to 2500 MHz and the MC13852 is for applications less than 1000 MHz.

• Gain: 18.7 dB (typical) at 1960 MHz and 17.7 dB (typical) at 2140 MHz

• Output third order intercept point (OIP3): 16 dBm at 1960 MHz and 17 dBm (typical) dBm at

2140 MHz

• Noise Figure (NF): 1.37 dB (typical) at 1960 MHz and 1.46 dB at 2140 MHz

• Output 1 dB compression point (P1dB): 8 dBm (typical) at 1960 MHz and 8 dBm (typical) at

2140 MHz

• IP3 Boost Circuitry from Freescale

• Bypass mode has return losses comparable to active mode, for use in systems with filters and duplexers

• Bypass mode improves dynamic range in variable signal strength environments

• Integrated logic-controlled standby mode with current drain < 1uA

• Total supply current variable from 2.5 mA–5 mA using an external bias resistor

• In a receiver system with 20% active mode and 80% bypass mode, the average current drain is < 0.6 mA

• On-chip bias sets the bias point

• Bias stabilized for device and temperature variations

• MLPD-8 leadless package with low parasitics

• 1575 MHz, 1960 MHz, 2140 MHz and 2500 MHz application circuit evaluation boards with characterization data are available

• Available in tape and reel packaging

1.2

Applications

Ideal for use in any RF product that operates between 1000 MHz and 2.5 GHz, and may be applied in:

• Buffer amplifiers

• Mixers

• IF amplifiers

• Voltage controlled oscillators (VCOs)

• Use with transceivers requiring external LNAs

• Smart metering

• Mobile—Cellular front end LNA, GPS, two-way radios

• Consumer—WLAN, 802.11 b/g

• Auto—GPS, active antenna, wireless security

• Low current drain/long standby time for extended battery life applications

MC13851 Advance Information, Rev. 2.0

Freescale Semiconductor

Electrical Specifications

Figure 1

shows a simplified block diagram of the MC13851 with the pinouts and location of the Pin 1 designator on the package.

Pin 1 Identifier

Figure 1. Functional Block Diagram

2 Electrical Specifications

Table 1

. lists the maximum ratings for the device.

Table 1. Maximum Ratings (TA=25°C, unless otherwise noted)

Supply voltage

Storage temperature range

Operating ambient temperature range

RF input power

Power dissipation

Rating

Thermal resistance, junction to case

Thermal resistance, junction to ambient, 4 layer board

Symbol

Vcc

T stg

T

A

P

RF

Pdis

R thetaJC

R thetaJA

Value

3.3

-65–150

-30–85

10

100

24

90

°

°

Unit

Vdc

°

°

C

C dBm mW

C/W

C/W

Note: Maximum ratings

1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the recommended Operating Conditions and Electrical Characteristics tables.

2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM)

≤

200V. Charge Device Model (CDM)

≤

450V, and

Machine Model (MM)

≤

50V

Table 2

lists the recommended operating conditions.

Table 2. Recommended Operating Conditions

RF frequency range

Supply voltage

Characteristic Symbol f

RF

V

CC

Min

1000

2.3

Typ

—

2.75

Max

2500

3

Unit

MHz

V



3


Table 2. Recommended Operating Conditions (continued)

Characteristic Symbol Min Typ Max Unit

Logic voltage

Input high voltage

Input low voltage

— 1.25

0

1.8

0

V

CC

0.80

Vdc

Vdc

Table 3

shows the use of the Gain and Enable pins to select Active mode (High Gain), Bypass mode (Low

Gain) or Standby mode (Disable) operation.

Table 3. Truth Table

Enable Disable

Pin Function Pin Name

Logic Circuit Bias Vcc

Toggles Gain Mode (Active or Bypass)

Toggles LNA On/Off

Vcc

Gain

Enable

Notes:

1. Logic state 1 equals Vcc voltage. Logic state of 0 equals ground potential.

2. Vcc is inductively coupled to LNA Out pin and Vcc pin

3. Minimum logic state 1 for enable and gain pins is 1.25V

4. Maximum logic state 0 for enable and gain pins is 0.8V

Low Gain High Gain Low Gain High Gain

1

0

1

1

1

1

1

0

0

1

1

0

Table 4

lists the electrical characteristics associated with noise performance measured in a 50

Ω

system.

Additional noise parameters are listed in Table 15

and

Table 16

. Also listed are the typical Icc and RF turn

on times for the device. Information and details on the boards are shown in Section 4, “Printed Circuit and

Bill of Materials .”

Table 4. Electrical Characteristics (Vcc = 2.75 V, Ta = 25°C)

Characteristic

Insertion Gain

R1=1.2 k

Ω

, Freq=1.575 GHz

R1=1.2 k

Ω

, Freq=2.14 GHz

R1=1.5 k

Ω

, Freq=1.575 GHz

R1=1.5 k

Ω

, Freq=2.14 GHz

Maximum Stable Gain and/or Maximum Available Gain [Note1]

R1=1.2 k

Ω

, Freq=1.575 GHz

R1=1.2 k

Ω

, Freq=2.14 GHz

R1=1.5 k

Ω

, Freq=1.575 GHz

R1=1.5 k

Ω

, Freq=2.14 GHz

Minimum Noise Figure

R1=1.2 k

Ω

, Freq=1.575 GHz

R1=1.2 k

Ω

, Freq=2.14 GHz

R1=1.5 k

Ω

, Freq=1.575 GHz

R1=1.5 k

Ω

, Freq=2.14 GHz

Symbol

|S21|

2

MSG, MAG

NFmin

Min

—

—

—

—

17.4

14.5

16.4

14.9

21.1

19.6

19

18.1

Typ

18.9

16

17.9

16.4

22.6

21.1

20.5

19.6

0.97

1.07

0.98

1.1

Max

1.3

1.4

1.3

1.4

—

—

—

—

—

—

—

—

Unit dB dB dB

4




Table 4. Electrical Characteristics (Vcc = 2.75 V, Ta = 25°C)

Characteristic Symbol Min

Associated Gain at Minimum Noise Figure

R1=1.2 k

Ω

, Freq=1.575 GHz

R1=1.2 k

Ω

, Freq=2.14 GHz

R1=1.5 k

Ω

, Freq=1.575 GHz

R1=1.5 k

Ω

, Freq=2.14 GHz

Icc and RF Turn On Time

Enable trigger total time of 1.8

μ second from 0 to 2.75 V

Icc rise time from 0 to 76% of final current level

Icc rise time from 0 to 87% of final current level

RF on time from leading edge of enable trigger to RF turn-on

Gnf

Note:

Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:

MAG = |S21/S12(K

± sqrt(K2-1)) |, if K>1, MSG = |S21/S12|, if K<1

20.5

17

20.5

17.5

—

—

—

Typ

22

18.6

22

19

6.4

9.6

1.37

Max

—

—

—

—

—

—

—

Unit dB

μ s

Table 5

lists the electrical characteristics measured on evaluation boards tuned for typical application frequencies when Rbias is 1.2 k

Ω

. Further details on the application circuits are shown in

Section 3,

“Application Information ”

Table 5. Electrical Characteristics Measured in Frequency Specific Tuned Circuits

(Vcc = 2.75V, TA = 25°C, Rbias =1.2k

Ω unless otherwise noted)

Characteristic

1575 MHz (Refer to Figure 7

)

Frequency

Active RF Gain

Active Noise Figure

Active Input Third Order Intercept Point

Active Input 1dB Compression Point

Active Current @ 2.75V, Rbias=1.2k

Ω


Ω

Active Gain

Bypass RF Gain

Bypass Noise Figure

Bypass Input Third Order Intercept Point

Bypass Current

Bypass Gain


)

Frequency

Active RF Gain

Active Noise Figure



Symbol f

G

NF

IIP3

P1dBoutput

Icc

Icc

S21

G

NF

IIP3

—

S21 f

G

NF

IIP3

P1dBoutput

Min

18

-6.5

—

24

—

-7

—

18.4

—

-6.5

6.3

—

—

—

17.7

—

-4

6

Typ

19

-5.5

6

25.5

4

-5.5

1575

19.4

1.28

-5

7.4

4.8

3.8

1960

18.7

1.37

-2.7

8

Max

—

—

1.65

—

—

Unit

MHz dB dB dBm dBm

MHz dB dB dBm dBm mA mA dB dB dB dBm

μ

A dB

—

—

7

—

20

—

—

—

1.6

—

—

5.8

4.8



5


Table 5. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)

(Vcc = 2.75V, TA = 25°C, Rbias =1.2k

Ω unless otherwise noted)

Characteristic


Ω


Ω

Active Gain

Bypass RF Gain

Bypass Noise Figure


Bypass Current

Bypass Gain


)

Frequency

Active RF Gain

Active Noise Figure




Ω


Ω

Active Gain

Bypass RF Gain

Bypass Noise Figure


Bypass Current

Bypass Gain


)

Frequency

Active RF Gain

Active Noise Figure




Ω


Ω

Active Gain

Bypass RF Gain

Bypass Noise Figure


Bypass Current

Bypass Gain

Symbol

Icc

Icc

S21

G

NF

IIP3

—

S21 f

G

NF

IIP3

P1dBoutput

Icc

Icc

S21

G

NF

IIP3

—

S21 f

G

NF

IIP3

P1dBoutput

Icc

Icc

S21

G

NF

IIP3

—

S21

Min

—

—

17.4

-6.5

—

24.5

—

-6.5

14.7

-6

—

24

—

-5.4

—

15

—

-0.2

7

—

—

16.5

-5.8

—

24.5

—

-5.7

—

16.7

—

-3

6.7

—

—

Typ

4.8

26

4

-5

4.8

3.8

18.4

-4.9

15.7

-5

5.2

25.3

4

-5

2400

16

1.52

2

8.1

4.8

3.8

17.6

-4.8

4.9

25.7

4

-4.7

2140

17.7

1.46

-0.5

8

4.8

3.8

—

—

5.8

—

20

—

—

—

1.8

—

—

5.8

4.8

—

—

5.9

—

20

—

—

—

1.75

—

—

5.8

4.8

Max

6.2

—

20

—

5.8

4.8

—

—


μ

A dB


μ

A dB

Unit mA mA dB dB dB dBm

μ

A dB

6




Figure 2 and Figure 3 show maximum stable and maximum available gain and forward insertion gain

versus frequency for the packaged device in a 50

Ω

system using bias resistors of 1.5 k

Ω

and 1.2 k

Ω

.

26

24

22

20

18

16

14

12

|S21|

2

MSG/MAG

MSG/MAG (dB)

|s21|^2 (dB)

10

1 1.2

1.4

1.6

1.8

2 2.2

2.4

2.6

Frequency (GHz)

Figure 2. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency (Rbias = 1.5k

Ω)

26

24

22

20

18

16

14

12

MSG

|S21|

2

MAG

MSG/MAG (dB)

|s21|^2 (dB)

10

1 1.2

1.4

1.6

1.8

2 2.2

2.4

2.6

Figure 3. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency (Rbias = 1.2 k

Ω)



7


Figure 4

and

Figure 5

show minimum noise figure and associated gain versus frequency for the packaged device in a 50

Ω

system using bias resistors of 1.5 k

Ω

and 1.2 k

Ω

.

1.3

30

1.2

1.1

1

0.9

Gnf

NFmin 15

10

5

25

20

NFmin

Gnf

0.8

1 1.2

1.4

1.6

1.8

2 2.2

2.4

2.6

0

Frequency (GHz)

Figure 4. Minimum Noise Figure and Associated Gain vs. Frequency (Rbias = 1.5

k

Ω

)

1.3

1.2

1.1

Gnf

30

25

20

15

10

1

NFmin

Gnf

NFmin

0.9

5

0.8

1 1.2

1.4

1.6

1.8

2 2.2

2.4

2.6

0

Frequency (GHz)

Figure 5. Minimum Noise Figure and Associated Gain vs. Frequency (Rbias = 1.2

k

Ω

)

8



Application Information

Figure 6

shows the Icc current drain for a range of values for the external bias resistor Rbias.

5

4.5

4

3.5

y = 1.5497x

2 ‐ 7.6446x

+ 11.822

R² = 0.981

3

2.5

Icc mA

Poly.

(Icc mA)

2

1.1

1.3

1.5

1.7

1.9

2.1

Rbias value (kohm)

Figure 6. Icc vs. Bias Resistor R1 Value

3 Application Information

The MC13851 LNA is designed for applications in the 1000 MHz to 2.5 GHz range. It has three different modes: High Gain, Low Gain (bypass) and standby. The LNA is programmable through the Gain and

Enable pins. The logic truth table is given in

Table 3 . The internal bypass switch is designed for broadband

applications. One of the advantages of the MC13851 is the simplification of the matching network in both bypass and amplifier modes. The bypass switch is designed so that changes of input and output return losses between bypass mode and active mode are minimized and the matching network design is simplified. In these application examples a balance is made between the competing RF performance characteristics of Icc, NF, gain, IP3 and return losses with unconditional stability. Conjugate matching is not used for the input or output. Instead, matching which achieves a trade-off in RF performance qualities is used. For a particular application or specification requirement, the matching can be changed to achieve enhanced performance of one parameter. Measurements are made at a bias of Vcc=2.75 V. Frequency spacing for IP3 measurements is 200 kHz. Non-linear measurements are made at Pin = -30 dBm. Typical application circuits are provided for 1575 MHz, 1960 MHz, 2140 MHz and 2.4 GHz applications. Typical

RF performance is shown for two values of bias resistor R1: 1.2 k

Ω

and 1.5 k

Ω

. These two current drain levels offer variations in intercept point, gain and noise figure. Included with each application are the

schematics and electrical performance. Section 4, “Printed Circuit and Bill of Materials

” provides the

evaluation board layout and Bill of Material for the circuits. Section 5, “Scattering and Noise Parameters

” provides Smith charts with gain and noise circles for each application frequency.

3.1

1575 MHz Application

This application was designed to provide typical NF = 1.28 dB, S21 gain = 19 dB, OIP3 =14.5 dBm with return losses better than -10 dB at 1575 MHz. Typical performance that can be expected from this circuit at 2.75V is listed in

Table 6 . The component values can be changed to enhance the performance of a

particular parameter, but usually at the expense of another. Two values of bias resistor R1 are shown to



9

Application Information demonstrate performance for different IP3 and Icc requirements. Inductor L3 provides bias to the logic circuit.

Figure 7

is the 1575 MHz application schematic with package pinouts and the circuit component topology.

C1

22 pF

L1

4.7 nH

RF IN

5 4

Gnd

Enable

Gain

6

7

8

Logic

3

2

1

L2

R1

1.2 k

R2

10

Rbias

C2

1 pF

R3

150

RF

OUT

5.1 nH

Gnd

L3

270 nH

C3

33 pF

Figure 7. 1575 MHz Application Schematic

Table 6

shows the electrical characteristics for the 1575 MHz evaluation board.

Table 6. Typical 1575 MHz Evaluation Board Performance

(Vcc = 2.75V, T

A

= 25° C )

R1=1.2 K

Ω

Frequency

Characteristic

RF Gain

High Gain

Bypass

Output Third Order Intercept Point

High Gain

Bypass

Input Third Order Intercept Point

High Gain

Bypass

Out Ref P1dB

High Gain

In Ref P1dB

High Gain

Noise Figure

High Gain

Bypass

Current Draw

High Gain

Bypass

Rbias R1 Value

Symbol f

G

OIP3

IIP3

P1dBout

P1dBin

NF

Icc

—

Min

—

18.4

-6.5

13.2

19

-6.5

24

6.3

-13.3

—

—

—

—

—

Typ

1575

19.4

-5.5

14.5

20.3

-5

25.5

7.4

-12

1.28

6

4.8

4

1.2

Max

—

—

—

—

—

—

—

—

—

1.6

7

5.8

20

—

C4

.01 uF

Vcc

Unit

MHz dB dBm dBm dBm dBm dB mA

μ

A k

Ω

10




Table 6. Typical 1575 MHz Evaluation Board Performance (continued)

(Vcc = 2.75V, T

A

= 25° C )

Symbol Min Typ Max Unit Characteristic

Input Return Loss

High Gain

Bypass

Gain

High Gain

Bypass

Reverse Isolation

High Gain

Bypass

Output Return Loss

High Gain

Bypass

R1=1.5 k

Ω

Frequency

RF Gain

High Gain

Bypass


High Gain

Bypass


High Gain

Bypass

Out Ref P1dB

High Gain

In Ref P1dB

High Gain

Noise Figure

High Gain

Bypass

Current Draw

High Gain

Bypass

Rbias R1 Value

Input Return Loss

High Gain

Bypass

Gain

High Gain

Bypass

Reverse Isolation

High Gain

Bypass

S11

S21

S12

S22 f

G

OIP3

IIP3

P1dBout

P1dBin

NF

Icc

—

S11

S21

S12

—

—

18

-7

—

—

—

—

—

18

-6.5

13.9

19

-5.5

24

6.6

-13.5

—

—

—

—

—

—

—

17.9

-6.5

—

—

-11

-11

19

-5.5

-27

-5.7

-14.9

-18

1575

19

-5.5

15.9

20.3

-3.2

26

7.6

-11.5

1.27

5.9

3.8

4

1.5

-10.6

-11.5

18.9

-5.5

-25.9

-5.6

-8

-8

—

—

-25

-4.4

-9

-9

—

—

—

—

—

—

—

—

—

1.6

6.9

4.8

20

—

-8.6

-10

—

—

-24.5

-4.6

dB dB dB dB


μ

A k

Ω dB dB dB



11



(Vcc = 2.75V, T

A

= 25° C )

Symbol Min Typ Max Unit Characteristic

Output Return Loss

High Gain

Bypass

S22 —

—

-13

-18

-9

-12 dB

3.2


These application circuits are designed to demonstrate performance at 1960 MHz. Typical results of

NF = 1.4 dB, S21 gain > 18 dB and OIP3 of 16 dBm. Two values of bias resistor R1 are shown to demonstrate performance for different IP3 and Icc requirements. Resistor R3 is used to de-Q output inductor L2 and adjust gain and return losses. Inductor L3 provides bias to the logic circuit. Reducing R3 lowers gain and improves return losses. Typical performance that can be expected from this circuit at 2.75

V is listed in

Table 7 .

Figure 8


C1

2.4 pF

L1

5.1 nH

Enable

5

8

4

RF IN

Gain

6

7 Logic

3

2

1

Gnd

R1

1.2 k

R2

10

Rbias

C2

0.9 pF

L2

3.3 nH

R3

620

RF

OUT

Gnd

L3

2 70 nH

C3

33 pF


Table 7



(Vcc = 2.75V, Ta = 25°C)

Symbol Min Typ Max Characteristic

R1=1.2 K

Ω

Frequency

RF Gain

High Gain

Bypass


High Gain

Bypass f

G

OIP3

—

17.7

-6.5

14

19.2

1960

18.7

-4.9

16

20.9

—

—

—

—

—

C4

.01 uF

Vcc

Unit

MHz dB dBm

12





(Vcc = 2.75V, Ta = 25°C)



High Gain

Bypass

Out Ref P1dB

High Gain

In Ref P1dB

High Gain

Noise Figure

High Gain

Bypass

Current Draw

High Gain

Bypass

Rbias R1 Value

Input Return Loss

High Gain

Bypass

Gain

High Gain

Bypass

Reverse Isolation

High Gain

Bypass

Output Return Loss

High Gain

Bypass

R1=1.5 k

Ω

Frequency

RF Gain

High Gain

Bypass


High Gain

Bypass


High Gain

Bypass

IIP3

P1dBout

P1dBin

NF

Icc

—

S11

S21

S12

S22 f

G

OIP3

IIP3

-4

24.5

6

-13

—

—

—

—

—

—

—

17.4

-6.5

—

—

—

—

—

17.5

-6.8

16.1

19.1

-3

24.5

-2.7

26

8

-10.5

1.37

4.8

4.8

4

1.2

-10

-11

18.4

-5

-25

-4.8

-14

-14.8

1960

18.5

-5

17.1

20.9

-1.5

26

—

—

—

—

1.65

6.2

5.8

20

—

-7

-8

—

—

-23.5

-3

-8

-10

—

—

—

—

—

—

—

Unit dBm dBm dBm dB mA

μ

A k

Ω dB dB dB dB

MHz dB dBm dBm



13



(Vcc = 2.75V, Ta = 25°C)


Out Ref P1dB

High Gain

In Ref P1dB

High Gain

Noise Figure

High Gain

Bypass

Current Draw

High Gain

Bypass

Rbias R1 Value

Input Return Loss

High Gain

Bypass

Gain

High Gain

Bypass

Reverse Isolation

High Gain

Bypass

Output Return Loss

High Gain

Bypass

P1dBout

P1dBin

NF

Icc

—

S11

S21

S12

S22

5.6

-13

—

—

—

—

—

—

—

17

-6.5

—

—

—

—

8

-10.5

1.35

4.9

3.8

4

1.5

-9

-11

18

-5

-24.5

-4.5

-12.5

-15

—

—

1.65

6.2

4.8

20

—

-6.5

-8

—

—

-22.5

-4

-7

-10

Unit dBm dBm dB mA

μ

A k

Ω dB dB dB dB

3.3


These application circuits demonstrate performance at 2140 MHz. Matching component values can be changed to enhance a particular parameter. Typical performance expected from this circuit at 2.75V Vcc is listed in

Table 8 . Two values of bias resistor R1 are shown to demonstrate performance for different IP3

and Icc requirements. The same matching topology is used on each of the application circuits, with a highpass match on the output and a simple inductor-capacitor network on the LNA input. Resistor R3 is used to de-Q output inductor L2 and adjust gain and return losses. Lowering the value of R3 lowers gain and improves return losses.

14




Figure 9


RF IN

C1

2.4 pF

L1

4.7 nH

5 4

Gnd

Enable

Gain

6

7

8

Logic

3

2

1

R1

1.2 k

R2

10

Rbias

C2

0.9 pF

L2

2.7 nH

R3

620

RF

OUT

Gnd

L3

270 nH

C3

33 pF


C4

.01 uF

Vcc

Table 8



(Vcc = 2.75V, Ta = 25°C)

Characteristic

R1=1.2 K

Ω (

Refer to

Figure 9

)

Frequency

RF Gain

High Gain

Bypass


High Gain

Bypass


High Gain

Bypass

Out Ref P1dB

High Gain

In Ref P1dB

High Gain

Noise Figure

High Gain

Bypass

Current Draw

High Gain

Bypass

Rbias R1 Value

Symbol f

G

OIP3

IIP3

P1dB

P1dB

NF

Icc

—

Min

—

16.7

-5.8

15.5

20

-3

24.5

6.7

-11

—

—

—

—

—

Typ

2140

17.7

-4.8

17.1

21

-0.5

25.7

8

-9.6

1.46

4.9

4.8

4

1.2

Max

—

—

—

—

—

—

—

—

—

1.75

5.9

5.8

20

—

Unit


μ

A k

Ω



15



(Vcc = 2.75V, Ta = 25°C)


Input Return Loss

High Gain

Bypass

Gain

High Gain

Bypass

Reverse Isolation

High Gain

Bypass

Output Return Loss

High Gain

Bypass

R1=1.5 K

Ω

(Refer to

Figure 9

)

Frequency

RF Gain

High Gain

Bypass


High Gain

Bypass


High Gain

Bypass

Out Ref P1dB

High Gain

In Ref P1dB

High Gain

Noise Figure

High Gain

Bypass

Current Draw

High Gain

Bypass

Rbias R1 Value

Input Return Loss

High Gain

Bypass

S11

S21

S12

S22 f

G

OIP3

IIP3

P1dB

P1dB

NF

Icc

—

S11

—

—

16.5

-5.7

—

—

—

—

—

16.4

-5.8

16

19.5

-2

24.7

7

-10.3

—

—

—

—

—

—

—

-10.5

-13.5

17.6

-4.7

-24.7

-4.5

-11

-20.8

2140

17.4

-4.8

18

21

0.9

25.7

8

-9.3

1.46

4.7

3.8

4

1.5

-9.6

-13

-7

-10

—

—

-23.7

-4

-8

-10

—

—

—

—

—

—

—

—

—

1.75

5.3

4.8

20

—

-8

-9

Unit dB dB dB dB


μ

A k

Ω dB

16





(Vcc = 2.75V, Ta = 25°C)


Gain

High Gain

Bypass

Reverse Isolation

High Gain

Bypass

Output Return Loss

High Gain

Bypass

S21

S12

S22

16.5

-5.4

—

—

—

—

17.4

-4.7

-24

-4.6

-10.6

-21

—

—

21.6

4.1

-8

-10

Unit dB dB dB

3.4


This application was designed to provide NF =1.5 dB, S21 gain > 16 dB, OIP3 of 17.5 dBm with return losses better than -9 dB at 2400 MHz. Typical performance that can be expected from this circuit at 2.7V is listed in

Table 9 . Two values of bias resistor R1 are shown to demonstrate performance for different IP3

and Icc requirements. Resistor R3 is used to de-Q output inductor L2 and adjust gain and return losses.

Lowering the value of R3 lowers gain and improves return losses.

Figure 9





17


Table 9



(Vcc = 2.75V, Ta = 25°C)

Characteristic

R1=1.2 K

Ω

(Refer to Figure 10

)

Frequency

RF Gain

High Gain

Bypass


High Gain

Bypass


High Gain

Bypass

Out Ref P1dB

High Gain

In Ref P1dB

High Gain

Noise Figure

High Gain

Bypass

Current Draw

High Gain

Bypass

Rbias R1 Value

Input Return Loss

High Gain

Bypass

Gain

High Gain

Bypass

Reverse Isolation

High Gain

Bypass

Output Return Loss

High Gain

Bypass

Symbol f

G

OIP3

IIP3

P1dB

P1dB

NF

Icc

—

S11

S21

S12

S22

Min

15

-5.5

16

18.5

-0.2

24

7

-9

—

—

—

—

—

—

—

14.7

-5.4

—

—

—

—

Typ

2400

16

-5

17.5

20

1.3

25.3

8.1

-8

1.51

5.2

4.8

4

1.2

-12.5

-14

15.7

-5

-23.6

-5.5

-12

-22.5

Max

—

—

—

—

—

—

—

—

1.8

5.8

5.8

20

—

-9

-10

—

—

-22.6

-4.5

-9

-20 dBm dBm dBm dBm dB mA

μ

A k

Ω dB dB dB dB

Unit

MHz dB

18





(Vcc = 2.75V, Ta = 25°C)


R1=1.5 K

Ω

(Refer to Figure 10

)

Frequency

RF Gain

High Gain

Bypass


High Gain

Bypass


High Gain

Bypass

Out Ref P1dB

High Gain

In Ref P1dB

High Gain

Noise Figure

High Gain

Bypass

Current Draw

High Gain

Bypass

Rbias R1 Value

Input Return Loss

High Gain

Bypass

Gain

High Gain

Bypass

Reverse Isolation

High Gain

Bypass

Output Return Loss

High Gain

Bypass f

G

OIP3

IIP3

P1dB

P1dB

NF

Icc

—

S11

S21

S12

S22

—

14.9

-6

16

19.2

-0.2

24.3

7

-8.8

—

—

—

—

—

—

—

14.4

-6

—

—

—

—

2400

15.9

-5

18

20.4

2

25.3

7.9

-7.8

1.52

5.2

3.8

4

1.5

-10.7

-14.5

15.4

-5.1

-23.3

-5.5

-11.3

-21.9

—

—

—

—

—

—

—

—

—

1.8

6

4.8

20

—

-9

-12

—

—

-22

-4.5

-8.5

-15

Unit


μ

A k

Ω dB dB dB dB



19

Printed Circuit and Bill of Materials

4 Printed Circuit and Bill of Materials

Figure 11

is the drawing of the printed circuit board. Figure 13 is the drawing of the evaluation board used

for each of the application frequency designs described in

Section 3, “Application Information

.” These drawings show the boards with the circuit matching components placed and identified.

Note: Dimensions are in inches and [mm].

Soldering Note: The center flag under the part must be soldered to board.

Figure 11. Printed Circuit Board

Figure 11

is a picture of a typical assembled evaluation board similar to the ones in the evaluation kits.

Figure 12. Typical Assembled Evaluation Board with SMA Connectors

20



Printed Circuit and Bill of Materials

Figure 13. 1575-, 1960-, 2140-, 2400 MHz Application Board

The bill of materials for each of the application frequency circuit boards is listed in

Table 10 . The value,

case size, manufacturer and circuit function of each component are shown.

Table 10. Bill of Materials for the Application Circuit Boards

Component Value Case Manufacturer

1575 MHz Application Circuit (see Figure 7

)

C4

L1

L2

L3

C1

C2

C3

R1

R2

R3

L1

L2

L3

R1

C1

C2

C3

C4

R2

R3

22 pF

1 pF

33 pF

0.1

μ

F

4.7 nH

5.1 nH

270 nH

1.2 k

Ω

10

Ω

150

Ω

402

402

402

402

402

402

402

402

402

402

1900 MHz Application Circuit (see Figure 8 )

Murata

Murata

Murata

Murata

Murata

Murata

Murata

KOA

KOA

KOA

2.4pF

0.9 pF

33 pF

.01

μ

F

5.1 nH

3.3 nH

270 nH

1.2 k

Ω

15

Ω

620

402

402

402

805

402

402

402

402

402

402

Murata

Murata

Murata

Murata

Murata

Murata

Murata

KOA

KOA

KOA

Comments

DC block, input match

DC block, output match

RF bypass

Low frequency bypass

Input match

Output match, bias decouple

Bias couple to logic

Bias set point

Stability

L2 de-Q, gain adjust

Input match

Output match

RF bypass


Input match

Output match


LNA bias

Stability

De-Q L2, adjust gain, RLs



21

Scattering and Noise Parameters

Table 10. Bill of Materials for the Application Circuit Boards (continued)

Component Value Case Manufacturer


L1

L2

L3

R1

C1

C2

C3

C4

R2

R3

2.4pF

0.9 pF

33 pF

.01

μ

F

4.7 nH

2.7

270 nH

1.2 k

Ω

10

Ω

620

402

402

402

402

402

402

402

805

402

402

Murata

Murata

Murata

Murata

Murata

Murata

Murata

KOA

KOA

KOA

Comments

Input match

Output match

RF bypass


Input match

Output match


LNA bias

Stability



C4

L1

L2

L3

C1

C2

C3

R1

R2

R3

2.4pF

0.9 pF

33 pF

.01

μ

F

3.6 nH

2

270 nH

1.2 k

Ω

10

Ω

620

402

402

402

805

402

402

402

402

402

402

Murata

Murata

Murata

Murata

Murata

Murata

Murata

KOA

KOA

KOA

Input match

Output match

RF bypass


Input match

Output match


LNA bias

Stability


5 Scattering and Noise Parameters

Table 11

through

Table 14

list the S parameters for the packaged part in a 50

Ω

system for each of the modes of operation and for two values of the external bias resistor.

Table 11. Scattering Parameters, Active Mode, Rbias=1.2k

Ω

(Vcc = 2.75V, 25°C, 50

Ω

system) f (MHz)

1000

1050

1100

1150

1200

1250

1300

S11

Mag

0.712

0.696

0.679

0.663

0.651

0.634

0.619

Ang

-19.7

-20.3

-21.2

-21.7

-21.9

-22.2

-22.4

S21

Mag

10.508

10.318

10.132

9.947

9.742

9.552

9.413

Ang

145.3

144.3

143.1

142.2

141.0

140.2

139.3

S12

Mag

0.027

0.029

0.030

0.031

0.033

0.034

0.035

Ang

94.1

94.3

94.8

94.8

95.1

95.6

96.4

S22

Mag

0.913

0.904

0.896

0.886

0.875

0.870

0.861

Ang

9.6

10.0

10.5

10.7

10.8

11.0

11.2

22



1000

1050

1100

1150

1200

1250


2100

2150

2200

2250

2300

2350

2400

2450

2500

2550

2600

1700

1750

1800

1850

1900

1950

2000

2050

1350

1400

1450

1500

1550

1600

1650 f (MHz)


Ω (continued)

(Vcc = 2.75V, 25°C, 50

Ω

system)

S11

Mag

0.313

0.28

0.251

0.309

0.367

0.364

0.351

0.338

0.323

0.319

0.308

0.538

0.519

0.505

0.486

0.448

0.435

0.415

0.376

0.607

0.597

0.587

0.576

0.571

0.571

0.556

Ang

-44.8

-37.0

-29.5

-16.2

-24.7

-30.5

-35.0

-37.9

-40.5

-41.4

-43.6

-29.7

-31.3

-33.5

-35.7

-37.5

-37.8

-41.7

-45.4

-22.9

-23.3

-23.6

-23.9

-24.4

-26.2

-28.2

S21

Mag

6.708

6.321

5.956

6.073

6.554

6.756

6.542

6.459

6.304

6.168

6.047

8.420

8.284

8.129

8.009

7.735

7.564

7.421

7.155

9.242

9.069

8.977

8.813

8.806

8.693

8.583

Ang

121.6

121.8

125.2

130.1

129.3

126.9

124.4

122.8

121.6

120.6

119.6

131.8

130.8

129.5

128.3

126.4

126.2

124.4

122.5

138.3

138.0

137.0

136.2

135.9

134.7

133.0

S12

Mag

0.059

0.052

0.044

0.037

0.050

0.058

0.062

0.065

0.066

0.067

0.068

0.051

0.052

0.054

0.057

0.058

0.058

0.061

0.063

0.036

0.038

0.040

0.042

0.044

0.049

0.050

Ang

80.1

79.7

78.1

100.5

110.1

108.1

104.0

102.4

100.3

100.7

99.4

96.5

96.4

96.1

95.2

91.7

92.2

90.4

86.6

97.3

98.5

99.3

100.3

101.5

100.1

97.4

S22

Mag

0.569

0.541

0.561

0.648

0.694

0.678

0.648

0.627

0.613

0.608

0.606

0.779

0.764

0.751

0.737

0.700

0.688

0.662

0.618

0.854

0.851

0.847

0.845

0.846

0.840

0.802

Ang

6.2

11.7

18.1

20.3

14.8

9.3

8.3

7.8

8.1

8.1

7.1

5.2

5.5

4.1

3.7

7.4

7.2

6.8

5.6

11.5

11.6

11.4

11.1

10.2

8.2

7.2

f (MHz)


Ω

(Vcc = 2.75V, 25°C, 50

Ω

system)

S11

Mag

0.754

0.739

0.721

0.709

0.698

0.682

Ang

-17.9

-18.6

-19.4

-19.9

-20.3

-20.6

S21

Mag

9.171

9.055

8.902

8.774

8.629

8.517

Ang

150.9

149.8

148.7

147.9

146.8

146.2

S12

Mag

0.028

0.029

0.031

0.032

0.033

0.035

Ang

94.9

95.2

95.0

95.4

95.6

96.3

S22

Mag

0.941

0.933

0.927

0.918

0.910

0.907

Ang

10.7

11.1

11.7

11.8

12.0

12.2



23


2050

2100

2150

2200

2250

2300

2350

2400

2450

2500

2550

2600

1650

1700

1750

1800

1850

1900

1950

2000

1300

1350

1400

1450

1500

1550

1600 f (MHz)


Ω (continued)

(Vcc = 2.75V, 25°C, 50

Ω

system)

S11

Mag

0.489

0.475

0.467

0.454

0.436

0.409

0.390

0.378

0.369

0.359

0.356

0.348

0.586

0.577

0.560

0.548

0.528

0.513

0.509

0.500

0.667

0.654

0.640

0.625

0.611

0.595

0.591

Ang

-32.4

-33.9

-34.2

-37.8

-39.4

-41.7

-40.9

-41.5

-42.2

-43.2

-44.0

-44.7

-24.0

-25.1

-26.7

-28.0

-28.8

-28.8

-29.0

-31.2

-21.2

-21.9

-22.5

-22.8

-23.0

-23.1

-23.1

S21

Mag

6.832

6.707

6.660

6.588

6.538

6.508

6.467

6.181

6.079

5.945

5.825

5.680

7.619

7.505

7.410

7.283

7.154

7.006

6.929

6.861

8.444

8.318

8.150

8.093

7.908

7.910

7.668

Ang

134.8

134.5

133.1

133.3

132.1

130.5

129.7

128.3

127.5

126.8

126.3

125.7

139.9

139.2

138.5

137.6

136.9

136.3

136.3

135.6

145.1

144.0

143.8

142.6

141.9

141.3

140.8

S12

Mag

0.058

0.060

0.062

0.063

0.065

0.066

0.067

0.067

0.068

0.068

0.069

0.069

0.046

0.048

0.049

0.050

0.052

0.053

0.054

0.056

0.036

0.037

0.039

0.040

0.041

0.043

0.044

Ang

101.1

100.5

101.1

99.6

100.1

98.0

98.2

97.2

97.5

97.6

97.8

98.1

99.0

99.0

99.1

99.4

99.6

98.7

99.8

100.1

96.3

96.4

97.1

97.3

97.6

98.2

98.5

S22

Mag

0.773

0.770

0.750

0.745

0.730

0.714

0.693

0.671

0.659

0.651

0.652

0.652

0.841

0.829

0.821

0.813

0.807

0.794

0.789

0.781

0.897

0.888

0.884

0.876

0.871

0.863

0.861

Ang

10.7

10.2

9.6

9.2

8.6

8.4

7.3

8.6

9.7

10.7

11.4

11.9

11.5

11.8

11.9

11.7

11.5

11.4

11.5

11.1

12.2

12.4

12.6

12.6

12.6

12.2

11.8

f (MHz)

1000

1050

1100

1150

1200

Table 13. Scattering Parameters, Bypass Mode, Rbias=1.2k

Ω and 1.5k

Ω

(Vcc = 2.75V, 25°C, 50 Ω system)

S11

Mag

0.356

0.340

0.327

0.312

0.298

Ang

-25.9

-24.6

-23.0

-21.4

-20.3

S21

Mag

0.658

0.663

0.667

0.671

0.674

Ang

25.8

24.9

24.0

23.3

22.6

S12

Mag

0.646

0.651

0.655

0.659

0.662

Ang

25.2

24.3

23.5

22.7

22.0

S22

Mag

0.402

0.387

0.373

0.359

0.347

Ang

-12.4

-11.3

-9.9

-8.2

-6.5

24




Table 13. Scattering Parameters, Bypass Mode, Rbias=1.2k

Ω and 1.5k

Ω (continued)

(Vcc = 2.75V, 25°C, 50 Ω system) f (MHz)

2000

2050

2100

2150

2200

2250

2300

2350

2400

2450

2500

2550

2600

1600

1650

1700

1750

1800

1850

1900

1950

1250

1300

1350

1400

1450

1500

1550

S11

Mag

0.186

0.182

0.180

0.185

0.185

0.187

0.186

0.185

0.181

0.178

0.177

0.174

0.171

0.235

0.226

0.220

0.211

0.197

0.199

0.202

0.194

0.288

0.275

0.263

0.253

0.248

0.250

0.244

Ang

-4.4

-3.6

-4.2

-4.3

-5.5

-8.3

-10.1

-12.0

-14.1

-16.8

-19.8

-23.6

-27.4

-10.0

-10.2

-9.5

-8.5

-6.2

-1.7

-3.2

-5.0

-18.7

-16.7

-14.8

-12.6

-10.0

-9.6

-10.4

S21

Mag

0.687

0.682

0.686

0.689

0.695

0.695

0.697

0.694

0.696

0.695

0.694

0.691

0.686

0.689

0.690

0.690

0.689

0.685

0.682

0.688

0.688

0.677

0.678

0.679

0.678

0.675

0.680

0.687

Ang

16.1

16.2

16.3

16.2

15.7

15.2

14.6

14.2

13.7

13.1

12.5

11.8

11.2

18.9

18.5

17.8

17.4

16.9

17.3

17.0

16.5

21.8

21.2

20.6

20.0

19.9

20.0

19.5

S12

Mag

0.677

0.673

0.676

0.680

0.685

0.685

0.688

0.685

0.686

0.681

0.680

0.677

0.673

0.678

0.680

0.680

0.679

0.675

0.673

0.679

0.678

0.665

0.667

0.668

0.667

0.664

0.669

0.676

Ang

15.8

15.8

15.9

15.9

15.4

14.9

14.3

13.8

13.4

12.5

11.9

11.2

10.6

18.5

18.0

17.3

17.0

16.4

16.9

16.6

16.1

21.4

20.7

20.1

19.6

19.5

19.6

19.1

S22

Mag

0.213

0.204

0.198

0.192

0.186

0.185

0.178

0.173

0.168

0.159

0.155

0.150

0.143

0.272

0.267

0.260

0.253

0.245

0.235

0.229

0.223

0.336

0.326

0.318

0.311

0.306

0.289

0.279

Ang

8.4

8.1

9.5

11.2

10.4

9.3

7.5

7.0

4.1

2.0

-1.7

-5.6

-9.1

6.8

7.3

8.5

9.4

3.7

4.9

6.3

6.9

-4.7

-3.4

-1.9

-0.7

-0.3

0.9

2.1

f (MHz)

1000

1050

1100

1150

Table 14. Scattering Parameters, Standby Mode, Rbias=1.2k

Ω and 1.5k

Ω

(Vcc = 2.75V, 25°C, 50 Ω system)

S11

Mag

0.939

0.935

0.934

0.931

Ang

2.1

2.2

2.5

2.7

S21

Mag

0.031

0.033

0.035

0.037

Ang

104.0

104.4

104.8

105.2

S12

Mag

0.031

0.033

0.034

0.036

Ang

103.1

103.8

104.2

104.4

S22

Mag

0.991

0.990

0.988

0.986

Ang

12.9

13.3

13.5

14.0



25


Table 14. Scattering Parameters, Standby Mode, Rbias=1.2k

Ω and 1.5k

Ω (continued)

(Vcc = 2.75V, 25°C, 50 Ω system) f (MHz)

S11

Mag

0.844

0.838

0.829

0.820

0.807

0.791

0.866

0.855

0.843

0.844

0.848

0.853

0.853

0.850

0.907

0.904

0.900

0.896

0.886

0.871

0.859

0.871

0.926

0.924

0.920

0.914

0.906

0.896

0.901

Ang

-3.9

-5.1

-6.5

-7.9

-9.4

-11.2

-0.2

-0.9

-2.1

-3.1

1.0

0.4

0.5

0.3

1.3

1.1

2.3

2.1

3.3

2.9

2.4

1.7

2.7

2.6

2.8

2.9

2.9

3.3

3.7

2350

2400

2450

2500

2550

2600

1950

2000

2050

2100

2150

2200

2250

2300

1550

1600

1650

1700

1750

1800

1850

1900

1200

1250

1300

1350

1400

1450

1500

S21

Mag

0.110

0.113

0.116

0.119

0.122

0.125

0.078

0.081

0.086

0.093

0.100

0.103

0.105

0.106

0.054

0.056

0.059

0.061

0.064

0.068

0.074

0.075

0.039

0.041

0.043

0.045

0.047

0.048

0.051

Ang

99.2

97.0

96.2

93.5

91.3

88.1

109.2

109.1

110.1

108.8

106.5

103.2

101.6

99.8

108.6

108.4

108.8

109.2

109.7

111.0

109.8

108.1

105.4

105.8

105.8

106.1

106.4

106.9

108.4

Table 15

provides the active mode noise parameters when the bias resistor is 1.2 k

Ω

.

Table 15. Active Mode Noise Parameters, Rbias=1.2k

Ω

(Vcc = 2.75V, 25 0C, 50

Ω

system, Icc=4.6 mA)

S12

Mag

0.109

0.111

0.114

0.117

0.120

0.122

0.076

0.080

0.085

0.092

0.099

0.101

0.104

0.105

0.053

0.056

0.058

0.061

0.063

0.067

0.073

0.074

0.038

0.040

0.042

0.044

0.046

0.048

0.050

Ang

98.7

96.4

95.2

92.6

90.6

87.4

108.7

108.9

109.8

108.4

106.0

102.8

101.0

99.4

107.9

108.0

108.3

108.6

109.2

110.4

109.4

107.5

104.7

105.2

105.3

105.5

105.9

106.2

107.8

S22

Mag

0.891

0.887

0.877

0.867

0.858

0.840

0.935

0.929

0.923

0.920

0.916

0.911

0.907

0.901

0.965

0.964

0.959

0.957

0.954

0.948

0.946

0.941

0.985

0.982

0.978

0.977

0.974

0.973

0.969

Ang

10.8

9.9

8.9

7.6

6.1

4.9

15.3

15.0

14.3

14.2

14.0

13.2

12.4

11.6

15.9

15.9

16.1

16.2

16.1

15.7

15.7

15.4

14.5

15.0

15.0

15.2

15.5

15.7

16.0

Freq

(MHz)

1000

1200

Fmin

(dB)

0.91

0.92

Gamma Opt

Mag

0.329

7.000

Angle

-8.8

-7.3

Rn

14.0

13.5

Ga

(dB)

27.42

25.09

26





Ω (continued)

(Vcc = 2.75V, 25 0C, 50

Ω

system, Icc=4.6 mA)

Freq

(MHz)

1500

1700

1900

2000

2100

2400

2500

2600

Fmin

(dB)

0.96

0.99

1.02

1.04

1.06

1.13

1.15

1.18

Gamma Opt

Mag

0.279

0.244

0.206

0.186

0.167

0.114

0.100

0.087

Angle

-12.3

-17.2

-20.8

-21.5

-20.9

-9.6

-1.6

8.8

Rn

12.5

12

11.5

11.5

11.0

11.0

10.5

10.5

Ga

(dB)

22.83

21.43

20.15

19.57

19.04

17.74

17.43

17.18

Table 16

provides the active mode noise parameters when the bias resistor is 1.5 k

Ω

.


Ω

(Vcc = 2.75V, 25°C, 50 Ω system, Icc=3.3 mA)

Freq

(MHz)

1000

1200

1500

1700

1900

2000

2100

2400

2500

2600

Fmin

(dB)

0.92

0.93

0.97

1.00

1.04

1.06

1.08

1.16

1.19

1.23

Gamma Opt

Mag Angle

0.358

0.344

0.306

0.273

0.237

0.218

0.199

0.143

0.127

0.111

-8.3

-8.7

-12.5

-15.2

-16.6

-16.4

-15.4

-5.5

0.6

8.3

Rn

14.5

14.0

13.5

13.0

12.0

12.0

12.0

11.5

11.5

11.5

Ga

(dB)

26.42

24.84

22.78

21.59

20.53

20.03

19.57

18.30

17.91

17.53



27


Figure 14

through Figure 21 are the constant noise figure and gain circles with input and output stability

regions shown on Smith charts. Gamma opt, noise resistance and stability at the frequency are shown for two values of the external bias resistor at 1600-, 1950-, 2150- and 2400 MHz.

Figure 14. Constant Noise Figure and Gain Circles, 1600 MHz, Rbias=1.2 k Ω

28

Figure 15. Constant Noise Figure and Gain Circles, 1600 MHz, Rbias=1.5k

Ω






Ω



29



30


Ω






Ω



31

Packaging

6 Packaging

Figure 22 and Figure 22 are the package drawings with dimensions for the MLPD-8, 2

×

2

×

0.6 mm, package.

DETAIL G

(See

Figure 23

)

Figure 22. Outline Dimensions for MLPD-8

32



Product Documentation

Figure 23. Package Details

7 Product Documentation

This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data.

Definitions of these types are available at: http://www.freescale.com.

8 Revision History

Table 17

summarizes revisions to this document since the previous release (Rev. 1).

Table 17. Revision History

Location

Throughout document

Section 2, “Electrical Specifications

Section 3, “Application Information

Section 3.4, “2400 MHz Application

Section 4, “Printed Circuit and Bill of Materials

Section 5, “Scattering and Noise Parameters

Revision

Changed package from MLF8 to MLPD-8

Complete revision

Complete update to Application Information

New 2400 MHz content.

Complete update to MLPD-8 package.

Added section and all content.



33

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Document Number: MC13851

Rev. 2.0

12/2010

MC13851 General Purpose Low Noise Amplifier with ByPass Switch

Freescale Semiconductor

Data Sheet: Advance Information

General Purpose Low Noise

Amplifier with Bypass Switch

1 Introduction

2 Electrical Specifications

3 Application Information

4 Printed Circuit and Bill of Materials

5 Scattering and Noise Parameters

6 Packaging

7 Product Documentation

8 Revision History

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