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HMC1118LP3DE
v00.0414
Typical Applications
Features
The HMC1118LP3DE is ideal for:
Non-Reflective 50 Ohm Design
r5FTU*OTUSVNFOUBUJPO
Positive Control: 0/+3.3V
r.JDSPXBWF3BEJP74"5
Low Insertion Loss: 0.68 dB @ 8 GHz
High Isolation: 50 dB @ 8 GHz
r.JMJUBSZ3BEJPT3BEBS&$.
High Power Handling: 35.5 dBm
Through
Path
Bm T
h
hrou
27 dBm T
Terminated
Path
Terminate
erm
Y
r'JCFSPQUJDT#SPBECBOE5FMFDPN
High Linearity: P1dB: +37 dBm typical
IIP3:
typicall
P3: +61 dBm typica
AR
Functional Diagram
ESD Rating: 2kV HBM
HBM
3 x 3 mm 16-Lead
6-Lead QFN SMT
SM Package
ow Frequency Spurious
Spurio
No Low
IN
Settling Time
Time (0.05
(0.0 dB Final RF OUT): 7.5 us
General
G
eneral De
Description
PR
EL
IM
SWITCHES - SPDT - SMT
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, 9 kHz - 13 GHz
5IF).$-1%&JTBHFOFSBMQVSQPTFCSPBECBOE
5IF).$
5IF).$
IJHIJTPMBUJPOOPOSFáFDUJWF41%5TXJUDIJOBMPXDPTU
IJHIJT
IJHIJTPM
leadless
QFN surface mount package. Covering 9
lead
leadl
L)[UP()[UIFTXJUDIPGGFSTIJHIJTPMBUJPOBOEMPX
L)
JOTFSUJPOMPTT5IFTXJUDIGFBUVSFTE#JTPMBUJPO
and 0.6 dB insertion loss up to 8 GHz with 6 us 0.1
dB settling time. The switch operates using positive
control voltage logic lines of +3.3/0 V and requires
+3.3 V and -2.5 V supplies. The HMC1118LP3DE is
packaged in a leadless QFN 3 x 3 mm surface mount
package.
Electrical
al S
Specifications,
pecificatio
TA = +25° C, Vctl = 0/+3.3 Vdc, Vdd = LS = +3.3 Vdc,
Vss = -2.5 Vdc,
Ohm System
dc, 5
50 Oh
Parameter
1
Frequency
Insertion Loss
9 kHz - 3.0 GHz
9 kHz - 8.0 GHz
9 kHz - 10.0 GHz
9 kHz - 13.0 GHz
Isolation (RFC to RF1/RF2)
9 kHz - 3.0 GHz
9 kHz - 8.0 GHz
9 kHz - 10.0 GHz
9 kHz - 13.0 GHz
Return Loss (On State)
Return Loss (Off State)
Min.
40
40
25
18
Typ.
Max.
Units
0.5
0.6
0.7
1.3
1.0
1.1
1.3
2.0
dB
dB
dB
dB
50
48
35
25
dB
dB
dB
dB
9 kHz - 3.0 GHz
9 kHz - 8.0 GHz
9 kHz - 13.0 GHz
26
22
9
dB
dB
dB
9 kHz - 3.0 GHz
9 kHz - 8.0 GHz
9 kHz - 13.0 GHz
26
14
5
dB
dB
dB
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
1IPOFr'BYr0SEFS0OMJOFBUXXXIJUUJUFDPN
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1118LP3DE
v00.0414
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, 9 kHz - 13 GHz
Vss = -2.5 Vdc, 50 Ohm System (continued)
Parameter
Frequency
Min.
Typ.
Max.
Units
Input Power for 1 dB Compression
1 MHz - 13.0 GHz
35
37
dBm
Input Third Order Intercept
(Two-Tone Input Power = +14 dBm Each Tone)
1 MHz - 13.0 GHz
62
dBm
IN
AR
Y
RF Settling Time
50% CTL to 0.05 dB Margin to Final RF OUT
50% CTL to 0.1 dB Margin to Final RF OUT
Switching Speed
U3*4&U'"--3'
U0/U0''$5-UP3'
Insertion Loss
us
us
0.85
2.7
2
us
us
Return L
Loss
oss
0
0
-2
-3
RETURN LOSS
S (dB)
B)
--10
10
-1
PR
EL
IM
INSERTION LOSS (dB)
7.5
6
2
4
6
8
10
12
-20
-30
-40
-4
0
-50
14
0
2
4
FREQUENCY
ENCY
CY (GHz)
+25C
+85C
+
6
8
10
12
14
FREQUENCY (GHz)
RFC
RF1, RF2 ON
-40C
Isolation Between
tween
Ports RFC
C and RF1 / RF2
SWITCHES - SPDT - SMT
Electrical Specifications, TA = +25° C, Vctl = 0/+3.3 Vdc, Vdd = LS = +3.3 Vdc,
RF1, RF2 OFF
Isolation Between Ports RF1 and RF2
0
0
-10
-20
ISOLATION (dB)
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
-40
-60
-80
-80
-100
-90
0
2
4
6
8
10
12
14
RF1
0
2
4
6
8
10
12
14
FREQUENCY (GHz)
FREQUENCY (GHz)
RF2
RFC-RF1 ON
RFC-RF2 ON
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
1IPOFr'BYr0SEFS0OMJOFBUXXXIJUUJUFDPN
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC1118LP3DE
v00.0414
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, 9 kHz - 13 GHz
0.1 and 1 dB Input Compression Point
(Low Frequency Detail)
0.1 and 1 dB Input Compression Point
40
INPUT COMPRESSION (dBm)
36
34
30
0
1
2
3
4
5
6
7
8
9
10
11 12
13
FREQUENCY (GHz)
35
30
25
20
IN
AR
Y
32
15
10
0.01
0.1 dB Compression Point
1 dB Compression Point
1 dB Input Compression Point over Temp.
10
100
1000
1 dB Input
Input Comp
Compression
Co
Point over Temp.
((Low
Low Frequency
Frequenc Detail)
40
40
38
PR
EL
IM
36
34
32
30
0
1
2
3
4
5
7
6
8
9
10
11 12
3
5
35
30
25
20
15
10
0.01
13
FREQUENCY
ENCY
CY (GHz)
+25 C
+85 C
+
10
100
1000
+85C
-40C
Input Third Order Intercept Point (Low
Frequency Detail)
60
60
IP3 (dBm)
65
50
1
+25C
65
55
0.1
FREQUENCY (MHz) IN LOG SCALE
-40 C
Input Third O
Order
rder IIntercept
nte
ntercept
Point over
Temp.
IP3 (dBm)
1
0.1 dB Compression Point
1 dB C
Compression Point
28
55
50
45
0
2
4
6
8
10
12
FREQUENCY (GHz)
+25 C
3
0.1
1
FREQUENCY
QUENCY (MHz) IN LO
LOG SCALE
INPUT COMPRESSION
SION
N (dBm)
(dBm
INPUT COMPRESSION (dBm)
38
28
INPUT COMPRESSION (dBm)
SWITCHES - SPDT - SMT
40
+85 C
45
0.1
1
10
100
1000
FREQUENCY (MHz) IN LOG SCALE
-40 C
+25C
+85C
-40C
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
1IPOFr'BYr0SEFS0OMJOFBUXXXIJUUJUFDPN
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1118LP3DE
v00.0414
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, 9 kHz - 13 GHz
Absolute Maximum Ratings
RF Input Power (Vdd/Vctl =
77TT7
(T = 85 °C)
(Freq = 2GHz)
RF Input Power (Vdd/Vctl =
77TT7
(T = 85 °C)
(Freq = 2GHz)
Through Path
Through Path
38 dBm
28 dBm
Termination Path
Termination Path
-0.3 V to +3.7 Vdc
Positive Supply Voltage Range
(Vdd)
+3.0 V to
t +3.6 Vdc
V
Negative Supply Voltage Range
(Vss)
-2.8 V to 0.3 V
Negative Supply Voltage
e Range
(Vss)
-2.75 V to
V
o -2.25
-2
Control Voltage Range (Vctl)
-0.3 V to Vdd + 0.3 V
Control Voltage Range
ge (Vctl)
Vdd
0 V to V
Logic Select Voltage Range (LS)
-0.3 V to Vdd + 0.3 V
Logic Select Voltage Range (LS)
(LS
0 V to Vdd
Hot Switch Power Level
(Vdd = +3.3V) (T = 85 °C)
(Freq = 2GHz)
30 dBm
Hot Switch Power
ower Level
(Vdd = +3.3V) (Freq = 2
2GHz)
Hz)
27 dBm
Storage Temperature
-65 to +150 °C
[1]
Operating Temperature
T
Temperatu
-40 to +85 °C
Thermal Resistance
EL
IM
IN
AR
Y
Positive Supply Voltage Range
(Vdd)
35.5
5 dBm
d
dB
27 dBm
<>"UNBYJNVNJOQVUQ
<>"UNBYJNVNJOQVUQPXFS7BMVFXJMMWBSZXJUIQPXFSCBTFEPO
derating.
rating
Through Path
111 °C/W
Termination Path
106 °C/W
125 °C
ESD Sensitivity (HBM)
Class 2
0
-4
POWER (dB)
Maximum Junction Temperature
Power Derating
D
(for Hot Switching
Powe
Power)
&-&$53045"5*$4&/4*5*7&%&7*$&
*$4&/4*5*7&%&
$4&/4*5*7&%&
"/%-*/(13&$"
0#4&37&)"/%-*/(13&$"65*0/4
-8
-12
-16
-20
PR
-24
0.01
0.1
1
10
100
1000
10000
FREQUENCY (MHz) IN LOG SCALE
Power Derating (Through Path)
(Low Frequency Detail)
Power Derating
Path)
ting ((Through
T
Thr
0
0
-4
-4
POWER (dB)
POWER (dB)
SWITCHES - SPDT - SMT
Operating Range
-8
-12
-16
-8
-12
-16
-20
-20
-24
0
1
2
3
4
5
6
FREQUENCY (GHz)
7
8
9
10
-24
0.01
0.1
1
10
100
1000
FREQUENCY (MHz) IN LOG SCALE
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
1IPOFr'BYr0SEFS0OMJOFBUXXXIJUUJUFDPN
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC1118LP3DE
v00.0414
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, 9 kHz - 13 GHz
TTL/CMOS Control Voltages
Bias Voltage & Current
Vdd
(Vdc)
+3.3
Vss
(Vdc)
-2.5
Idd
(Typ.)
V"
Iss
(Typ.)
V"
Idd
(Max.)
V"
Iss
(Max.)
V"
20
0.5
200
10
State
Bias Condition
Low
UP7ED!•"5ZQJDBM
High
UP7EE7ED!•"5ZQJDBM
Truth Table
Control Input
Sig
Signal Path State
PR
EL
IM
IN
AR
Y
SWITCHES - SPDT - SMT
Vdd Range = +3.3 Vdc ± 10%
Vss Range = -2.5 Vdc ± 10%
LS
Vctl
RFC - RF1
RFC - RF2
OFF
High
Low
ON
High
H
High
igh
OF
OFF
ON
Low
Low
w
OFF
ON
Low
High
High
ON
OFF
Outline Drawing
NOTES:
-&"%"/%(306/%1"%%-&."5&3*"-."5&3*"-$011&3"--0:
%*.&/4*0/4"3&*/*/$)&4<.*--*.&5&34>
-&"%41"$*/(50-&3"/$&*4/0/$6.6-"5*7&
$)"3"$5&3450#&)&-7&5*$".&%*6.)*()8)*5&*/,03
-"4&3."3,-0$"5&%"11309"44)08/
1"%#633-&/(5)4)"--#&NN."9*.6.
1"%#633)&*()54)"--#&NN."9*.6.
1"$,"(&8"314)"--/05&9$&&%NN
"--(306/%-&"%4"/%(306/%1"%%-&.645#&40-%&3&%50
PCB RF GROUND.
3&'&350)*55*5&"11-*$"5*0//05&'0346((&45&%
-"/%1"55&3/
Package Information
1BSU/VNCFS
Package Body Material
Lead Finish
HMC1118LP3DE
RoHS-compliant Low Stress Injection Molded Plastic
/J1E"V
MSL Rating
MSL1
[2]
Package Marking [1]
H1118
XXXX
<>%JHJUMPUOVNCFS9999
[2] Max peak reflow temperature of 260 °C
5
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
1IPOFr'BYr0SEFS0OMJOFBUXXXIJUUJUFDPN
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1118LP3DE
v00.0414
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, 9 kHz - 13 GHz
Pin Descriptions
Description
GND
1BDLBHFCPUUPNNVTUBMTPCFDPOOFDUFEUP
PCB RF ground.
3'$3'3'
These pins are DC coupled and matched to 50 Ohms.
Blocking capacitors are required if RF line potential is
not equal to 0 Vdc.
9
Vss
Negative supply voltage.
10
Vctl
$POUSPMJOQVU4FFUSVUIBOEDPOUSPMWPMUBHFUBCMFT
FUBCMFT
BCMFT
11
LS
Interface Schematic
M
SWITCHES - SPDT - SMT
Function
IN
AR
Y
1JO/VNCFS
PR
EL
I
-PHJDTFMFDUJOQVU4FFUSVUIUBCMF
-PHJDTFMFDUJOQVU4F
-PHJDTFMFDUJOQVU4FF
12
VDD
Positive supply voltage.
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
1IPOFr'BYr0SEFS0OMJOFBUXXXIJUUJUFDPN
Application Support: Phone: 978-250-3343 or apps@hittite.com
6
HMC1118LP3DE
v00.0414
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, 9 kHz - 13 GHz
PR
EL
IM
IN
AR
Y
SWITCHES - SPDT - SMT
Evaluation PCB
List of Materials
aterials for E
Eval
Evaluation PCB EV1HMC1118LP3D [1]
Item
D
Description
J1 - J3
1$.PVOU4."3'$POOFDUPS
1
1$.P
TP1-TP5
Thru
Th Hole Mount Test Point
$$
Q'$BQBDJUPS1LH
U1
HMC1118LP3DE
SPDT Switch
PCB [2]
600-01012-00-1 Evaluation PCB
<>3FGFSFODFUIJTOVNCFSXIFOPSEFSJOHDPNQMFUFFWBMVBUJPO1$#
[2] Circuit Board Material: Rogers 4350
7
5IF DJSDVJU CPBSE VTFE JO UIF BQQMJDBUJPO TIPVME
CF HFOFSBUFE XJUI QSPQFS 3' DJSDVJU EFTJHO UFDIniques. Signal lines at the RF port should have 50
Ohm impedance and the package ground leads
BOE CBDLTJEF HSPVOE TMVH TIPVME CF DPOOFDUFE
directly to the ground plane similar to that shown
BCPWF5IFFWBMVBUJPODJSDVJUCPBSETIPXOBCPWFJT
BWBJMBCMFGSPN)JUUJUF.JDSPXBWF$PSQPSBUJPOVQPO
request.
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
1IPOFr'BYr0SEFS0OMJOFBUXXXIJUUJUFDPN
Application Support: Phone: 978-250-3343 or apps@hittite.com