SCS120KG
Datasheet
SiC Schottky Barrier Diode
Outline
VR
1200V
IF
20A
QC
70nC
(1)
TO-220AC
(2)
(3)
Inner circuit
Features
(1)
1) Shorter recovery time
2) Reduced temperature dependence
(1) Cathode
(2) Cathode
(3) Anode
3) High-speed switching possible
(2)
(3)
Packaging specifications
Packaging
Construction
Silicon carbide epitaxial planer type
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
Taping code
50
-
Marking
SCS120KG
Absolute maximum ratings (Tj = 25°C)
Symbol
Value
Unit
Reverse voltage (repetitive peak)
VRM
1200
V
Reverse voltage (DC)
VR
1200
V
Continuous forward current
IF
20*1
A
84*2
A
358*3
A
Parameter
IFSM
Surge no repetitive forward current
Repetitive peak forward current
IFRM
60*4
A
Total power dissipation
PD
130*5
W
Junction temperature
Tj
175
°C
Tstg
55 to 175
°C
Rth(j-c)
1.1
°C/W
Range of storage temperature
Thermal resistance, junction to case
*1 Tc=108°C *2 PW=8.3ms sinusoidal,Tj=25°C
*3 PW=10s square,Tj=25°C *4 Tc=100°C,Tj=150°C,Duty cycle=10% *5 Tc=25°C
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1/5
2013.01 - Rev.B
Data Sheet
SCS120KG
Electrical characteristics (Tj = 25°C)
Values
Parameter
Symbol
DC blocking voltage
VDC
Forward voltage
VF
Reverse current
Total capacitance
IR
Unit
Conditions
Min.
Typ.
Max.
1200
-
-
V
IF=20A,Tj=25°C
-
1.5
1.75
V
IF=20A,Tj=175°C
-
2.0
-
V
VR=1200V,Tj=25°C
-
20
400
A
VR=120V,Tj=175°C
-
240
-
A
VR=1V,f=1MHz
-
1300
-
pF
VR=800V,f=1MHz
-
100
-
pF
IR =0.4mA
C
Total capacitive charge
Qc
VR=800V,di/dt=500A/s
-
70
-
nC
Switching time
tc
VR=800V,di/dt=500A/s
-
18
-
ns
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2/5
2013.01 - Rev.B
Data Sheet
SCS120KG
Electrical characteristic curves
Fig.2 VF - IF Characteristics
Fig.1 VF - IF Characteristics
30
100
Pulsed
Pulsed
Ta=175ºC
Forward Current : IF [A]
Forward Current : IF [A]
Ta=75ºC
25
10
Ta=125ºC
1
Ta=25ºC
Ta=75ºC
0.1
Ta= 25ºC
0.01
0.001
Ta=25ºC
20
Ta= 25ºC
15
Ta=175ºC
10
Ta=125ºC
5
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
Forward Voltage : VF [V]
1.0
1.5
2.0
2.5
Forward Voltage : VF [V]
Fig.3 VR - IR Characteristics
Fig.4 VR-Ct Characteristics
10,000
100
Ta=175ºC
10
Ta=125ºC
1
Ta=75ºC
0.1
Ta=25ºC
0.01
Ta= 25ºC
0.001
0
200
400
600
800 1,000 1,200
Capacitance Between Terminals : Ct [pF]
1000
Reverse Current : IR [A]
0.5
Reverse Voltage : VR [V]
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Ta=25ºC
f=1MHz
1,000
100
10
0.01
0.1
1
10
100
1000
Reverse Voltage : VR [V]
3/5
2013.01 - Rev.B
Data Sheet
SCS120KG
Electrical characteristic curves
Fig.5 Thermal Resistance vs. Pulse Width
Fig.6 Power Dissipation
140
Ta=25ºC
Single Pulse
120
Power Dissipation [W]
Thermal Resistance : Rth(j-c) [ºC/W]
10
1
0.1
100
80
60
40
20
0.01
0.0001 0.001 0.01
0
0.1
1
10
0
100 1000
Pulse Width : Pw [s]
50
75
100 125 150 175
Case Temperature : Tc [ºC]
Fig.7 Derating Curve Ip-Tc
Fig.8 Io-Pf Characteristics
120
160
100
Duty=0.8
140
Duty=0.1
Duty=0.5
Duty=0.2
80
Power Dissipation [W]
Peak Forward Current : IP [A]
25
Duty=0.2
60
Duty=0.5
40
Duty=0.8
20
120
Duty=0.1
100
80
D.C.
60
40
20
D.C.
0
0
0
25
50
75
0
100 125 150 175
Case Temperature : Tc [ºC]
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© 2013 ROHM Co., Ltd. All rights reserved.
10
20
30
40
Average Rectified Forward Current : Io [A]
4/5
2013.01 - Rev.B
Data Sheet
SCS120KG
Dimensions (Unit : mm)
TO-220AC
4.4
9.8
3.6
3.2
9.14
15.4
2.8
1.27
1.3
12.8
2.4
5.08
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© 2013 ROHM Co., Ltd. All rights reserved.
0.76
0.5
5/5
2013.01 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
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Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
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provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
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R1102S
