International Journal of Emerging Technology and Advanced Engineering
Website: www.ijetae.com (ISSN 2250-2459, ISO 9001:2008 Certified Journal, Volume 4, Issue 8, August 2014)
Effect of Light intensity and Temperature on Crystalline
Silicon Solar Modules Parameters
A. El-Shaer1, M. T. Y. Tadros2, M. A. Khalifa3
1
Physics Department, Faculty of Science, Kafr El-Sheikh University, Kafr El-Sheikh, Egypt
2,3
Physics Department, Faculty of Science, Mansoura University, Mansoura, Egypt
Solar module is a collection of a solar cell which is
a device that converts the sunlight directly into direct
current (DC) of electrical energy by the photovoltaic
phenomena. Among various solar module devices, the Si
solar module was first developed, and is still the most
widely used photovoltaic device, occupying more than
90% of the solar market nowadays [4] because of the
advantages of the Si material over any other materials,
such as martial stability, high crystal quality, non-toxic
and its crystalline form has an almost ideal band gap for
solar energy conversion, i.e. Eg=1.11 eV. Therefore,
Silicon has dominated most solar module applications for
almost 60 years. The solar irradiation and light intensity
are changed daily, due to the rotation of the earth around
its own axis, which cause the consequence variation of
day and night, and seasonally due to the rotation of
the earth around the sun in an elliptical orbit [2].
All solar module parameters, including short-circuit
current, open-circuit voltage, fill factor, efficiency and
impact of series and parallel resistances are changed due
to changing the light intensity and temperature. Therefore,
it is important to study the effect of the light intensity on
the output performance of the solar module. In this work,
a detailed experimental investigation of module
parameters with light intensity and temperature has been
carried out. The steady state current–voltage(J–V)
characteristics of a silicon p–n junction module is often
described based on one diode model as given in the
following equation:
Abstract— It is significant to understand the effect of the
light intensity and temperature on output performance of
the crystalline solar modules. Therefore, it is possible to
evaluate the J-V curves of solar module under various
environmental conditions. This paper discuses the effect of
light intensity and temperature on performance parameters
of mono-crystalline and poly-crystalline silicon solar
module. The experiments have been carried out under a
solar simulator for various intensity levels in the range 0.21.0 Sun and 10–50oC, respectively. The results of the two
modules indicated that light intensity has a dominant effect
on current parameters. It is found that photocurrent; short
circuit current and maximum current have been increased
linearly with increasing light intensity. So, concentrating
system may be regarded as a best choice to enhance the
power output of solar system. The power density of the
mono-crystalline and poly-crystalline silicon solar module
increased from 8.96 and 7.72 mW/cm2 to 46.72 and 40.4
mW/cm2 for light intensity 0.2 and 1 Sun respectively.
On the other hand, it has been observed that module
temperature has a dramatic effect on voltage parameters.
Open circuit voltage and maximum voltage are decrease
with increasing module temperature. So, the maximum
power density of the mono-crystalline and poly-crystalline
silicon solar module decreased from 43.4 and 48.76/cm2 to
36.32 and 41.88mW/cm2 for temperature 10oC and 50oC
respectively.
Keywords— Crystalline Silicon Solar Modules, Light
Intensity, Module temperature, J-V characteristics
I.
INTRODUCTION
Solar energy is one of the most promising renewable
energy since it provides an unlimited, clean and
environmentally friendly energy [1]. Sunlight is by far
the largest carbon-free energy source on the planet.
More energy from sunlight strikes the Earth in 1 hour
(4.3 x1020J) than all the energy consumed on the planet in
a year (4.1 x1020J).one of its drawback is that it
is considered as a dilute energy since the solar flux is
rarely have a value more than 1 KW/m2 in the very hot
regions in the earth [2]. Therefore, to overcome this
disadvantage, it is important to use modules from solar
cells for the technological applications. The solar energy
converts into three forms of energy such as electricity,
chemical fuel, and heat energy [3]. The conversion of
sunlight to electrical energy occurs by solar modules.
J J
ph
J
q (V  I R

 V  J Rs
s) 1 
 Exp (
(1)
o 

nkT
R


sh
Where q is the elementary charge (1.6x10-19Coulomb),
V is the measured module voltage, k is the Boltzmann’s
constant (1.38x10-23 J/K) and T is the temperature in
Kelvin. Eq.(1) consists of different parameters known as,
the light generated current density (Jph), the reverse
saturation current density (Jo), the diode ideality
factor (n), the series resistance (Rs) and parallel
resistance (Rsh) . These parameters have a dominant
impact on the shape of JV characteristics of the solar
module at any given light intensity and module
temperature.
311
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Website: www.ijetae.com (ISSN 2250-2459, ISO 9001:2008 Certified Journal, Volume 4, Issue 8, August 2014)
The performance of the solar module, characterized by
the values of the short circuit current density (Jsc), open
circuit voltage (Voc), fill factor (FF) and efficiency (η) of
the solar module [5] can be determined. The large values
of Jsc give the maximum power generated by solar
module. The open circuit voltage (Voc) occurs when there
is no current passing through the module, i.e. V (at I=0).
Large Voc gives the maximum power generated by solar
module and is given by.
Voc 
KT
 J ph

 1
 Jo



ln 
q
The light source unit contains the xenon lamp (150W),
power supply for the lamp and all necessary optics to
simulate sunlight. Two commercial solar modules are
used in this study mono-crystalline silicon and polycrystalline silicon. The module displays under the xenon
lamp in the solar simulator.
The standardization of the xenon lamp was performed
with respect to the solar spectrum before carry out the
experiments by using sensor. The temperature unit was
used to adjust a constant temperature from 0 to 60oC for
the solar module. Therefore this unit is connected to J-V
measurement system to measure the effect of actual light
intensity at constant temperature The J–V characteristics
of the modules were measured with the help of a
"KEITHLEY 2400" Source Meter. The experiments were
carried out in the light intensity range 0.2-1.0 Sun with
temperature was adjusted at 25oC and temperature from
10 to 50oC with light intensity 1 Sun.
(2)
Fill factor (FF) is a measure for the quality of the solar
module. It is the ratio of maximum power density (Pmax)
to the theoretical power density (Pt). Large FF means
maximum power generated by solar module.
FF 
J m Vm
J sc Voc
(3)
III.
A. Effect of light intensity on modules parameters
The solar simulator has been calibrated and the
module temperature has been adjusted to 25oC via
the temperature unit. Under the steady-state conditions,
the J–V and power-voltage (P-V) characteristics have
been obtained for each module with light intensity as
shown in Figure (1, 2). A similarity in the characteristics
of mono- and polycrystalline silicon solar modules was
found. For the two modules, the short circuit current JSC
increases with increasing the light intensity and decreases
with increasing the module voltage. For intensity 1 Sun,
the Jsc is about 33.7 mA/cm2 and 34.8 mA/cm2 for the
mono- and poly-crystalline modules respectively. At the
same above light intensity, the Jsc decreases [7] with
increasing the voltage VOC up to 2.44 and 2.08 Volt
respectively.
Efficiency (η) is the ratio of the electrical output power
(P ) compared to the solar input power (P ). Efficiency
out
in
is related by Jsc, Voc and FF,

Pout FF J sh Voc

Pin
Pin
(4)
Where Pin is the power of the incident light, i.e. Pin is the
product of the incident light irradiance, measured in W/m2
or in suns (1000 W/m2), at the surface area of the solar
module (m2). In real modules power is dissipated through
the resistance of the contacts and through leakage
currents around the sides of the device. These effects are
equivalent electrically to two parasitic resistances in
series and in parallel with the equivalent circuit of solar
module. For an ideal module, Rsh would be infinite and
would not provide an alternate path for current to flow,
while Rs would be zero, resulting in no further voltage
drop before the load [6]. Most of silicon solar modules
are designed to work under normal sunlight and their
performances are evaluated at 25oC under an air mass
(AM) 1.5 and solar irradiation intensity of 1 Sun.
(a)
0.04
Isc
Cell type = mono C-Si
1.0Sun
0.8Sun
0.6Sun
0.4Sun
0.2Sun
1.0 Sun
0.03
0.8 Sun
2
J (A/ Cm )
II.
RESULTS AND DISCUSSION
EXPERIMENTAL WORK
In this work; a detailed experimental study of all solar
module parameters for commercial mono and poly
crystalline silicon under different light intensity and
temperature. A solar simulator was used to carry out the
experiments under any constant light intensity and
temperature.
0.6 Sun
0.02
0.4 Sun
0.01
0.2 Sun
0.00
0.0
0.4
0.8
1.2
1.6
V (volt)
312
2.0
2.4 Voc 2.8
International Journal of Emerging Technology and Advanced Engineering
Website: www.ijetae.com (ISSN 2250-2459, ISO 9001:2008 Certified Journal, Volume 4, Issue 8, August 2014)
0.04
Jsc
1.0Sun
0.8Sun
0.6Sun
0.4Sun
0.2Sun
1.0 Sun
0.03
0.8 Sun
(b)
0.8 Sun
0.032
0.6 Sun
2
0.6 Sun
0.02
1.0Sun
0.8Sun
0.6Sun
0.4Sun
0.2Sun
1.0 Sun
0.040
P (W/ Cm )
2
J (A/ Cm )
0.048
Cell type = poly C-Si
(b)
0.4 Sun
0.024
0.4 Sun
0.016
0.01
0.2 Sun
0.2 Sun
0.008
0.000
0.00
0.0
0.4
0.8
1.2
1.6
2.0
V(volt)
Voc
0.0
2.4
0.4
0.8
1.2
1.6
2.0
2.4
V(volt)
Fig. 1: The J-V curves of: (a) Mono C-Si and (b) Poly C-Si for
Tc=25 oC at different light intensities.
Fig. 2: The P-V curves of: (a) Mono C-Si and (b) Poly C-Si for
Tc=25 oC at different light intensities.
Figure 2 shows that the maximum power density for
the two modules increases with increasing the light
intensity. The maximum power density of the mono- and
the poly-crystalline modules for light intensity=0.2 Sun
was only 8.96 mW/cm2 and 7.72 mW/cm2, respectively.
Increasing the light intensity to be 1 Sun causes the
increase of the power by 80% to reach values 46.72
mW/cm2 and 40.4 mW/cm2. So, concentrating system
may be regarded a better choice to enhance the output
power of solar systems [8].
The dependence of the current parameters with light
intensity
for
the
two
modules
is
shown
in Figure 3(a, c). It can be easily to say that current
parameters of silicon solar module are highly dependent
on the light intensity level. Although the values of Jsc for
the mono- and the poly-crystalline modules for light
intensity 0.2 Sun were only 6.7 mA/cm2 and 6.9 mA/cm2,
respectively, their values increases to be 33.7 mA/cm2
and 34.8 mA/cm2 for intensity 1 Sun. Current parameters
increase linearly with increasing light intensity. A similar
result has been theoretically and experimentally verified
by numerous works [9-12]. The values of Jph and Jsc are
very close to each other or even the same for both monoand the poly-crystalline modules.
Figure 3(b, d) illustrates the dependence of voltage
parameters, for the two modules, on the light intensity. It
has been found that voltage parameters of each module
demonstrated a small rise with increasing light intensity.
The values of Voc for the mono- and the poly-crystalline
modules for light intensity = 0.2 Sun was 2.344 V and
1.999 V, respectively. These values were slightly raised
to be 2.43V and 2.08 mV for light intensity =1 Sun.
It can be noted from the results that light intensity
level has a crucial impact on current parameters of solar
module rather than the voltage parameters.
(a)
0.048
0.8 Sun
0.040
0.032
0.6 Sun
2
P (W/ Cm )
1.0Sun
0.8Sun
0.6Sun
0.4Sun
0.2Sun
1.0 Sun
0.024
0.4 Sun
0.016
0.2 Sun
0.008
0.000
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V(volt)
313
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2
Jph ,Jsc , Jm (mA/Cm )
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35
The dependence of parallel resistance with light
intensity for each module is shown in Figure 5(b, d). It
has been found that the parallel resistance for the two
modules decreases with light intensity. This decrease can
be explained in terms of a combination of tunneling and
trapping of the carriers through the defect states in the
space charge region of the device. These defect states
either act as recombination centers or traps depending up
on the relative capture cross sections of the electrons and
holes for the defect [1, 14, 15].
Iph
I sc
Im
(a)
30
25
20
15
10
5
V oc
Vm
(b)
0.2
0.4
0.6
0.8
1.0
Irradiance Intensity (Sun)
2
Iph
I sc
Im
(b)
35
Jph ,Jsc , Jm (mA/Cm )
(a)
11.0
10.5
Effeciency (%)
Voc , Vm (mV)
0
2480
2400
2320
2240
2160
2080
2000
1920
1840
1760
10.0
30
25
20
9.5
15
10
0.2
5
0
2080
2000
1920
1840
1760
1680
1600
1520
1440
1360
0.6
0.8
1.0
Voc
Vm
(d)
(b)
9.5
0.2
0.4
0.6
0.8
Effeciency (%)
Voc , Vm (mV)
0.4
Irradiance Intensity (Sun)
1.0
Irradiance Intensity (Sun)
Fig. 3: Light intensity dependency of current and voltage
parameters of: Mono C-Si (a, b) and Poly C-Si (c, d)
Therefore, concentrating systems such as Fresnel
lenses and Booster mirrors can be used to enhance
photocurrent, short circuit current and maximum current
values of module.
The dependence of efficiency on light intensity, for the two
modules, is shown in Figure 4. It has been found that the
efficiency of each module demonstrated a small increase with
light intensity [13].
The fill factor of the mono- and the poly-crystalline
modules was 68% and 44%, respectively and kept
constant with change of light intensity.
Figure 5(a, c) shows the dependence of series
resistance with light intensity for the two modules. It has
been found that the series resistance, of each module,
decreases with increasing light intensity due to the
increase in conductivity of the active layer with the
increase in the light intensity [1].
9.0
8.5
8.0
0.2
0.4
0.6
0.8
1.0
Irradiance Intensity (Sun)
Fig. 4: Light intensity dependency of efficiency of: (a) Mono C-Si
and (b) Poly C-Si
B. Effect of temperature on modules parameters
Similarly to the tests carried out for different light
intensity levels, at first the calibration of the solar
simulator was performed, light intensity has been
adjusted to 1.0 Sun. Under the steady-state conditions, J–
V characteristics as shown in Figure 6, and P-V
characteristics as shown in Figure 7 have been obtained
for each module at different module temperature.
314
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So, the poly-crystalline silicon solar module is better
than mono-crystalline silicon for hot area.
10
(a)
0.035
Rs(ohm)
8
6
Cell type = mono c-Si
(a)
0.030
o
10 C
o
20 C
o
30 C
o
40 C
o
50 C
Isc
4
0.025
0.020
2
I(A/Cm )
2
4000
(c)
3500
0.015
Rsh(ohm)
3000
0.010
2500
2000
0.005
1500
1000
0.000
500
0.0
0.2
0.4
0.6
0.8
0.4
0.8
1.2
1.6
2.0
2.4 Voc 2.8
V (volt)
1.0
Irradiance Intensity (Sun)
(c)
25
20
Rs(ohm)
(b)
0.06
Cell type = poly C-Si
o
10 C
o
20 C
o
30 C
o
40 C
o
50 C
0.05
15
10
2
J(A/Cm )
0.04
5
9000
8000
(d)
7000
0.03
0.02
Rsh(ohm)
6000
5000
0.01
4000
3000
0.00
0.0
2000
1000
0.4
0.8
1.2
1.6
2.0
2.4
V (volt)
0
0.2
0.4
0.6
0.8
1.0
Fig. 6: The J-V curves for light=1.0 Sun at different temperatures
of (a) Mono C-Si and (b) Poly C-Si
Irradiance Intensity (Sun)
Fig. 5: Light intensity dependency of series and parallel resistance
of Mono C-Si (a, b) and Poly C-Si (c, d)
The dependence of the current parameters with
temperature for the two modules is shown
in Figure 8(a, c). It can be to say that current parameters
of silicon solar module are slightly affected with
temperature. Although the value of Jsc for the monocrystalline module for temperature=10oC were 29.4
mA/cm2, this value decreases to be 29.07 mA/cm2 for
temperature=50oC. Decrease of Jsc by about 1% with
increasing module temperature. The value of Jsc for the
poly-crystalline module for temperature=10oC were
59.13 mA/cm2, this value increases to be 59.93 mA/cm2
for temperature=50oC.
Figure 7 shows the variation of the maximum power
density with module temperature. It has been found that
the maximum power density of the two modules
decreases with increasing module temperature, where
the maximum power density of the mono-crystalline and
the poly-crystalline modules for temperature=10oC was
43.4 mW/cm2 and 48.76 mW/cm2, respectively.
Increasing the temperature to 50oC causes the decrease of
the power by 25% and 14% to reach values 36.32
mW/cm2 and 41.88 mW/cm2 respectively.
315
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o
10 C
o
20 C
o
30 C
o
40 C
o
50 C
(a)
0.040
0.032
2
P(W/Cm )
I sc
Im
30
29
28
27
26
25
24
23
22
21
2600
2
Jsc , Jm (mA/Cm )
0.048
0.024
(a)
V oc
Vm
2400
Voc , Vm (mV)
0.016
0.008
0.000
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2000
1800
1600
2.8
(c)
2200
10
20
30
V (volt)
o
0.040
2
(b)
0.048
Jsc , Jm (mA/Cm )
10 C
o
20 C
o
30 C
o
40 C
o
50 C
2
P(W /Cm )
0.032
0.024
o
Tc ( C)
40
50
I sc
Im
60
58
56
54
52
50
48
46
44
42
40
38
36
(c)
2200
Vm
Voc
2000
Voc , Vm (mV)
0.016
0.008
0.000
0.0
0.4
0.8
1.2
1.6
2.0
(d)
1800
1600
1400
1200
2.4
10
V (volt)
20
30
o
Tc ( C)
40
50
Fig. 7: The P-V curves for light=1.0Sun at different temperatures of
(a) Mono C-Si and (b) Poly C-Si
Fig. 8: Module temperature dependency for current and voltage
parameters of Mono C-Si (a, b) and Poly C-Si (c, d)
Increase of Jsc by about 1% with increasing module
temperature can be attributed to the band gap Eg
decreases. On the other hand, the decrease in Jm arises
from the dramatic drop in voltage parameters [16]. For
any value of module temperature, the difference between
Jsc and Jm of mono-crystalline module has been found to
be smaller than that of the poly-crystalline module. This
result indicates that the mono-crystalline module is more
appropriate for the ideal module definition.
Figure 8(b, d) shows the variation of the voltage
parameters with temperature. It has been found that
voltage parameters of each module decrease with
increasing temperature. The values of Voc and Vm for the
mono-crystalline module decreases from 2.52V and
1.94V at temperature=10oC to 2.24 V and 1.65V at
temperature=50oC. About 11% and 14.7% decrement in
Voc and Vm, respectively has been determined. The
values of Voc and Vm for the poly-crystalline module
decreases from 2.2V and 1.3V at temperature=10oC to
1.95V and 1.12 mV at temperature=50oC.
316
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About 11.3% and 14.4% decrement in Voc and Vm,
respectively has been observed. It can be noted from the
results that the temperature has a crucial impact on
voltage parameters of solar module rather than the
current parameters [17].
The dependence of fill factor with temperature for
each module is shown in Figure 9. It has been found that
the fill factor of each module also demonstrated a
decrease with temperature increases [1]. The dependence
of efficiency with temperature for each module is shown
in Figure 10. It has been found that the efficiency of each
module demonstrated a decrease with temperature [1,18].
(a)
11.0
Effeciency (%)
10.5
10.0
9.5
9.0
8.5
10
20
30
40
50
o
Tc ( C)
(a)
11.0
(a)
0.70
10.5
FF
Effeciency (%)
0.69
0.68
10.0
9.5
9.0
0.67
10
20
30
40
8.5
50
10
o
20
30
Tc ( C)
40
50
o
Tc ( C)
Fig. 10: Module temperature dependency for efficiency of: (a)
Mono C-Si and (b) Poly C-Si
Figure 11(a, c) shows the dependence of series
resistance on temperature for the two modules.
It has been found that the series resistance of monocrystalline module demonstrated a small increase with
temperature increases, while the poly-crystalline module
shows a small decrease with temperature.
(b)
0.450
FF
0.445
0.440
2.0
(a)
1.8
Rs(ohm)
0.435
0.430
10
20
30
40
50
1.6
1.4
1.2
o
Tc ( C)
1.0
2000
Rsh(ohm)
Fig. 9: Module temperature dependency of fill factor of: (a) Mono
C-Si and (b) Poly C-Si
(c)
1500
1000
500
10
317
20
30
o
Tc ( C)
40
50
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And also, to avoid the drop in open circuit voltage and
maximum voltage, module temperature should be kept as
low as possible.
7.4
(b)
7.2
Rs(ohm)
7.0
6.8
Acknowledgment
6.6
6.4
This study was supported by Egyptian Science and
Technological Development Fund (STDF), call name:
Renewable Energy Research Program, Project ID: 1473.
6.2
6.0
400
(d)
Rsh(ohm)
380
REFERENCES
360
[1]
340
320
300
[2]
280
10
20
30
o
Tc ( C)
40
50
[3]
Fig. 11: Module temperature dependency of series and parallel
resistance of: Mono C-Si (a, b) and Poly C-Si (c, d)
[4]
[5]
The dependence of parallel resistance with
temperature for each module is shown in Figure 11(b, d).
It has been found that the parallel resistance of monocrystalline module decrease with temperature.
The parallel resistance of poly-crystalline module
increase with temperature. This increase can be attributed
to the existence of local in-homogeneities leading to nonuniform current flow or to the charge leakage a cross the
p-n junction in the module [1].
IV.
[6]
[7]
[8]
CONCLUSION
[9]
Accurate knowledge of solar module performance
parameters from the measured J–V characteristics is very
important for the quality control and the performance
assessment of solar system. In this paper, light intensity
and temperature dependency of output performance
parameters of mono-crystalline silicon and polycrystalline silicon solar modules has been experimentally
investigated. The results of the two modules indicated
that light intensity has a dominant effect on current
parameters. Short circuit current and maximum current
are increase linearly with increasing light intensity. So,
the maximum power density output increased by 80%
with increasing light intensity from 0.2 Sun to 1.0 Sun.
On the other hand, it has been observed that module
temperature has a dramatic effect on voltage parameters.
Open circuit voltage and maximum voltage are decrease
with increasing module temperature. So, the maximum
output power density decreased by 25% and 14% for the
mono-crystalline and poly-crystalline silicon with
increasing module temperature from 10oC to 50oC. From
the results obtained, it can be concluded that the best way
to improve the performance of solar system is
maximizing the light intensity falling on the solar
module’s surface to enhance the maximum output power
of solar system.
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
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