a power mosfet spice - High Frequency Electronics

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ALSO PUBLISHED ONLINE:
August2013
www.highfrequencyelectronics.com
A Power MOSFET SPICE
Model with Built-In Model
Generator
IN THIS ISSUE:
RF Power Limitations
Imposed by EU Standards
Featured Products
New Products
Market Reports
Ideas for today’s engineers: Analog · Digital · RF · Microwave · mm-wave · Lightwave
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IF/RF MICROWAVE COMPONENTS
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22
EU Standards
EU Power Limitations on
ZigBee-Type
Waveforms
By Boris Aleiner
28
SPICE Modeling
AUGUST2013
Vol. 12 No. 8
40
New Products
A Power MOSFET SPICE
Model with Built-In
Model Generator
By Andre Adrian
Including Molex, Hittite
Microwave, Tektronix,
Agilent, Times
Microwave Systems,
Rohde & Schwarz,
Renaissance Electronics.
16
12
6
Featured Products
In The News
Editorial
AUGUST2013
ALSO PUBLISHED ONLINE:
www.highfrequencyelectronics.com
A POWER MOSFET SPICE
MODEL WITH BUILT-IN MODEL
GENERATOR
Featuring
Z-Communications,
Custom MMIC, SAGE
Millimeter, Aeroflex,
Mini-Circuits, B&K
Precision, Richardson
RFPD.
4
IN THIS ISSUE:
RF Power Limitations
Imposed by EU Standards
Highlighting The Boeing
Co., Electric Boat Corp.,
Lockheed Martin,
Pasternack Enterprises,
National Instruments.
Featured Products
New Products
Market Reports
Ideas for today’s engineers: Analog · Digital · RF · Microwave · mm-wave · Lightwave
Commentary by
Publisher Scott
Spencer.
6 Editorial
12 In the News
16 Featured Products
8 Meetings & Events
40 New Products
64 Advertiser Index
High Frequency Electronics
EDITORIAL
Vol. 12 No. 8, August 2013
Publisher
Scott Spencer
scott@highfrequencyelectronics.com
Tel: 603-472-8261
Associate Publisher/Managing Editor
Tim Burkhard
tim@highfrequencyelectronics.com
Tel: 707-544-9977
Senior Technical Editor
Tom Perkins
tom@highfrequencyelectronics.com
Tel: 603-472-8261
Vice President, Sales
Gary Rhodes
grhodes@highfrequencyelectronics.com
Tel: 631-274-9530
Editorial Advisors:
Ali Abedi, Ph.D.
Candice Brittain
Paul Carr, Ph.D.
Alen Fezjuli
Roland Gilbert, Ph.D.
Sherry Hess
Thomas Lambalot
John Morelli
Karen Panetta, Ph.D.
Business Office
Summit Technical Media, LLC
One Hardy Road, Ste. 203
PO Box 10621
Bedford, NH 03110
Also Published Online at
www.highfrequencyelectronics.com
Subscription Services
Sue Ackerman
Tel: 651-292-0629
circulation@highfrequencyelectronics.com
Send subscription inquiries and address changes to the
above contact person. You can send them by mail to the
Business Office address above.
Our Environmental Commitment
High Frequency Electronics is printed
on paper produced using sustainable forestry practices, certified by
the Program for the Endorsement
of Forest Certification (PEFC™),
www.pefc.org
Copyright © 2013, Summit Technical Media, LLC
6
High Frequency Electronics
More on Passive
Components
Scott L. Spencer
Publisher
This past February, HFE’s Senior Technical Editor
Tom Perkins mentioned that he had received a few comments from our readers that more should be said about
passive components. In the past, some design engineers
never gave much thought to these devices we refer to as
passive components—resonators, filters, diplexers,
power dividers, directional couplers, impedance transformers, waveguides, transmission lines and connectors
as well as antennas. Not because they weren’t important—of course they were. It was that these components were readily
available with short lead times from multiple established manufacturers
and distributors.
But, as circuit design shifted away from discrete devices in favor of
MMICs, designers seized the opportunity to integrate passive components
into their circuit designs. One of the first challenges for most was the onchip spiral inductor. Believe it or not, there was a time in the early stages
of MMIC design when modern 3D Planar Electromagnetic circuit modeling, synthesis, and simulation software for microwave circuit design simply did not exist, and when early versions began to emerge these tools were
not available for use by every engineer. The on-chip inductor became so
important because its performance has a tremendous impact on overall
circuit performance, and ultimately cost. Designing for the correct inductance value, plus achieving a high self-resonance frequency and a high
quality Q factor, involved consideration of various geometrical parameters,
such as track width, track spacing, number of turns and layout area. This
was often accomplished through many cycles of trial and error—and at
great expense. Fortunately today companies like Agilent, Ansys, AWR
Corp, CST, Sonnet and others offer software solutions that make first-pass
success a reality.
Sign Up for Webcast on Passives
There is still a noticeable interest expressed by readers of this magazine for more discussion on passive components. In light of this High
Frequency Electronics will conduct an on-line webcast on August 28th at
1:00 PM EST. Presented by Tom Perkins, the webinar will examine basic
components such as resistors, inductors, capacitors, printed circuit functions, circulators, connectors, combinations of these, and their fundamental parameters. The state of present technology available in the microwave
marketplace will be reviewed. Tom will also briefly touch on some possible
future innovations that could provide revolutionary changes in circuit
techniques. This informative webinar should be useful to all who read and
enjoy HFE and will be geared toward
students, entry level engineers and
technicians, sales and marketing personnel, project managers, and procurement personnel. Tom Perkins is a
veteran RF/microwave design engineer and engineering manager and
will be available for follow-up questions. Sign-up is simple. Just go to
www.highfrequencyelectronics.com
and click on the banner that says
“Free HFE Webcast-August 28.”
While on the website take the opportunity to renew your subscription,
visit the websites of our advertisers,
scroll through the archives and check
out the featured new products.
NIWeek 2013
About the time this issue goes on
press, National Instrument’s NIWeek
2013 will be fully under way. I attended last year’s meeting and was
impressed with scope of the conference, especially the hands-on workshops; exhibits showcasing the latest
advancements in design, research,
and test; and keynote presentations
from leading technology thought
leaders. Last year also featured the
debut of the NI’s PXIe-5644R RF vector signal transceiver (VST), the first
software designed instrument that
combines a vector signal generator
and vector signal analyzer with a
user-programmable FPGA into a single PXI modular instrument. The
VST is still generating a lot of industry buzz as more and more users
experience first-hand its capabilities
and programming flexibility.
This year organizers plan for over
250 interactive technical sessions,
case study presentations, and panel
discussions for beginners to advanced
developers. Sessions on how to optimize efficiency in your test and Data
Acquisition Systems, implement
advanced technology for industrial
design, measurement, and control;
and emerging trends in science and
industry are all a part of NIWeek
2013. This well-run event even offers
participants a chance to earn continuing education units (CEUs) and
take software certification exams for
NI LabVIEW, NI LabWindows™/
CVI, and NI TestStand software.
IMS 2013
It has been eight weeks or more
since the IMS 2013 concluded in
Ka-Band
Seattle. In his July editorial Tom
Perkins summarized the most important aspects of the Symposium quite
succinctly. I would like to take the
opportunity to say thanks to all the
volunteers, committee members, delegates, sponsors, and the exhibition
management team for making this
year’s event a success.
Inflight
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Get info at www.HFeLink.com
MEETINGS & EVENTS
Conferences
October 6 – 10, 2013
European Microwave Conference (EuMC)
Nuremberg, Germany
www.eumweek.com
October 15 – 18, 2013
IEEE International Symposium on Phased Array Systems
and Technology
Waltham, Mass.
www.array2013.org
October 21 – 23, 2013
IEEE International Conference on Microwaves,
Communications, Antennas, and Electronic Systems
Tel Aviv, Israel
www.comcas.org
November 5 – 7, 2013
Global MilSatCom 2013
London
http://www.smi-online.co.uk/defence/uk/conference/
global-milsatcom
November 18 – 21, 2013
ARFTG Microwave Measurement Conference
Columbus, Ohio
www.arftg.org
January 19 – 23, 2014
IEEE Radio and Wireless Symposium
Newport Beach, Calif.
www.radiowirelessweek.org
Short Courses
Besser Associates
besserassociates.com
Tel: 650-949-3300
New Courses
Course 227: Wireless LANs
Course 226: Wireless/Computer/Telecom Network
Security
Course 228: GaN Power Amplifier Design
Course 223: Fundamentals of LTE, HSPA, & WCDMA
Course 221: B
ER, EVM, & Digital Modulation Testing
for Test & Product Engineers
Company-Sponsored
Training & Tools
Analog Devices
Training, tutorials and seminars.
http://www.analog.com/en/training-tutorials-seminars/resources/index.html
8
High Frequency Electronics
AWR
On-site and online training, and open training courses on
design software.
http://web.awrcorp.com/Usa/News--Events/Events/
Training/
Linear Technology
LTSpice IV
LTpowerCAD
LTpowerPlay
Amplifier Simulation & Design
Filter Simulation & Design
Timing Simulation & Design
Data Converter Evaluation Software
http://www.linear.com/designtools/software/
National Instruments
LabVIEW Core 1
Online
http://sine.ni.com/tacs/app/fp/p/ap/ov/pg/1/
LabVIEW Core 2
Online
http://sine.ni.com/tacs/app/fp/p/ap/ov/pg/1/
Object-Oriented Design and Programming in LabVIEW
Online
http://sine.ni.com/tacs/app/fp/p/ap/ov/pg/1/
Free, online LabVIEW training for students and teachers.
http://sine.ni.com/nievents/app/results/p/country/
us/type/webcasts/
Webcasts on demand.
http://search.ni.com/nisearch/app/main/p/bot/no/
ap/tech/lang/en/pg/1/sn/catnav:mm,n15:WebcastsOn
Demand,ssnav:dzn/
LabVIEW user groups.
https://decibel.ni.com/content/community/zone/labviewusergroups
Call for Papers
November 18 – 21, 2013
ARFTG Microwave Measurement Conference
Columbus, Ohio
Abstract deadline: October 7, 2013
Final submission deadline: November 10, 2013
www.arftg.org
December 9 – 11, 2013
IEEE International RF and Microwave Conference
Penang, Malaysia
Abstract deadline: June 1, 2013
Final submission deadline: November 1, 2013
rfm2013.myapmttemc.org
April 22 – 26, 2014
IEEE International Wireless Symposium
X’ian, China
Abstract deadline: September 23, 2013
Final submission deadline: October 28, 2013
iws-ieee.org
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MARKET REPORTS
UAV Demand Growing in Middle
East
Growing demand supported by strong intent and
investment capability is expanding the market for military unmanned aerial vehicles (UAVs) in the Middle
East. The region is already considered a lucrative market for defense. UAV development efforts by some
Middle East nations coupled with imports from the U.S.
will strongly bolster market expansion.
Currently, the U.S. and Israel are the top UAV
exporters globally. Israel’s lack of military ties with Arab
nations due to historic conflicts means that Middle East
countries have had no option but to procure UAVs from
the United States. However, other countries are achieving significant success in UAV technology and may soon
be able to export to the Middle East. Regional interest
and expertise in the domain is rising fast as well.
A key market driver is the fear of spreading regional
unrest. UAVs can offer smaller states a way to expand
their strength beyond traditional capabilities. The lack
of UAV capability in the larger Middle East states significantly influences regional power dynamics. For
instance, the Hezbollah movement recently acknowledged its use of UAVs against Israel. Gulf Arab states
are alarmed at the civil war in Syria and want to ensure
that popular uprisings in North Africa do not spread to
the Gulf. They are also concerned about Iran’s nuclear
program. As a result, every large country in the region
understands the need to acquire UAVs.
“Among the rich and politically stable Gulf nations,
UAE is more focused on boosting its UAV capability,”
noted Frost & Sullivan Aerospace & Defense Senior
Analyst Mahendran Arjunraja. “UAVs displayed at the
country’s International Defense Exhibition (IDEX) also
managed to generate a lot of interest from Saudi Arabia
and Oman. Nonetheless, efforts at indigenous capability
will take some time to materialize and until then,
Middle East nations will have to depend on foreign
equipment.”
—Frost & Sullivan
frost.com
GaN Device Market Growing
While military applications continue to drive the
GaN device market, commercial applications have
emerged that will help fuel rapid market growth. The
recently released Strategy Analytics GaAs and Compound
Semiconductor Technologies Service (GaAs) Forecast
and Outlook, “GaN MIcroelectronics Market Update:
2012-2017,” concludes that the overall GaN microelectronics device market closed 2012 with revenues of
slightly less than $100 million. The report also forecasts
that commercial RF and power management applica-
10 High Frequency Electronics
tions will begin shipping in volume during the forecast
period and this activity will push the overall market to
slightly more than $334 million by 2017.
“The GaN device market has been “about to take off ”
for a number of years,” noted Eric Higham of Strategy
Analytics. “Based on our most recent research, it appears
there are segments of the commercial market, like CATV
and wireless infrastructure that are seeing higher volumes, but the broad commercial market is still not quite
into the production phase. We do anticipate seeing more
of these commercial segments contribute over the period
and this will be the driver for strong revenue growth.”
Asif Anwar of Strategy Analytics added, “Despite the
interest and growth in commercial applications for GaN,
military applications will continue to account for more
than half of the GaN device revenue in 2017. The performance benefits of using GaN devices in military applications are clear and this will keep driving GaN usage.”
—Strategy Analytics
strategyanalytics.com
Tactical Radio Market Maintaining
Momentum
Despite pressures on global defense expenditure,
there will be continued investment in communications
capabilities with overall expenditure across land, air,
naval and space domains approaching $29 billion. The
Strategy Analytics Advanced Defense Systems (ADS)
service report, “Ground Communications Systems and
Components Forecast 2012-2022,” forecasts that the
market for land-based tactical radios will grow at a compound annual growth rate (CAGR) of 7.2 percent to
reach almost $4.5 billion in 2022.
Overall spending on land-based tactical radio hardware will continue to be led by North America, representing between 37 to 39 percent of the tactical radio
mar ket, over the 2012 to 2022 timeframe. Demand from
emerging markets in the Central and Latin America
(CALA) and Asia-Pacific (APAC) regions will also dictate
high grow rates with collective demand accounting for
over 46 percent of the market for tactical radio hardware
in 2022.
“We expect handheld radios to represent the bulk of
the market, accounting for as much as 94 percent of
shipment volumes in 2022 and just over 49 percent of
market value,” noted Asif Anwar of Strategy Analytics.
“Manpack radio shipments will also show significant
growth, while portable radio shipments will remain
essentially flat despite some healthy activity in the early
half of the forecast.”
—Strategy Analytics
strategyanalytics.com
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IN THE NEWS
Raytheon Co., El
Segundo, Calif., is being
awarded a $279,400,000
cost-plus-incentive-fee
contract for developmental efforts in support of the Technology
Development
(TD)
Phase of the Next Generation Jammer (NGJ) Program,
which will replace the aging ALQ-99 tactical jamming
system for integration on the EA-18G tactical aircraft. Developmental efforts will include maturation and
demonstration of critical technologies, completion of the
system architecture and the requirements derivation and
decomposition to subsystems. The objective of the NGJ
TD phase is to develop a cost effective electronic attack
system that will provide significantly improved airborne
electronic attack capabilities against advanced threats
through enhanced agility and precision within jamming
assignments, increased interoperability, and expanded
broadband capability for greater threat coverage against a
wide variety of radio frequency emitters. The Boeing Co.,
Ridley Park, Pa., was
awarded a $17,028,790
modification (P00009)
to a previously awarded
firm-fixed-price, multiyear, foreign military
sales contract (FMS)
(W58RGZ-12-C-0010)
for the procurement of CH-47 cargo aircraft. This
FMS contract is in support of Australia and United Arab
Emirates. A combination of fiscal 2010, fiscal 2011 and
fiscal 2012 procurement funds are being obligated on
this award. The Army Contracting Command, Redstone
Arsenal, Ala., is the contracting activity.
The Boeing Co., Mesa,
Ariz., was awarded a
$15,425,233
modification (P00004) to a
previously
awarded
firm-fixed-price, foreign
military sales contract
(W58RGZ-12-C-0113)
for the procurement of
Apache Block III aircraft. This FMS contract is in support of Saudi Arabia. The cumulative total
face value of this contract is $50,584,111. Fiscal 2012
procurement funds are being obligated on this award. The
Army Contracting Command, Redstone Arsenal, Ala., is
the contracting activity. 12 High Frequency Electronics
Electric Boat Corp.,
Groton, Conn., is being
awarded a $208,651,154
undefinitized
modification to contract
(N00024-12-C-2115)
for the long lead time
material
associated
with the second fiscal 2014 Virginia-class submarine
(SSN 793) and fiscal 2015 Virginia-class submarines (SSN
794 and SSN 795). Work will be performed in Sunnyvale,
Calif. (54 percent), Florence, N.J. (8 percent), Groton,
Conn./Quonset Point, R.I. (6 percent), Newport News, Va.
(6 percent), Coatesville, Pa. (5 percent), Windsor Locks,
Conn. (4 percent), Montville, N.J. (3 percent), Tampa, Fla.
(2 percent), York, Pa. (2 percent), and other locations below
1 percent (10 percent).
The Boeing Co., Saint
Louis, Mo., has been
awarded a $39,464,977
modification (P00006)
to
the
contract
(FA8681-13-C-0063)
for
Joint
Direct
Attack
Munitions
(JDAM). This modification is an option exercised under the Lot 17 JDAM
contract to add 1,601 JDAM tailkits. The total cumulative
face value of the contract is $141,914,216. Work will be
performed at Saint Charles, Mo., and is expected to be
completed by March 31, 2015. Lockheed Martin
Missiles and Fire
Control, Orlando, Fla.,
has been awarded an
additional $21,390,000
firm-fixed-price,
undefinitized contract
award for Sniper
Advanced Targeting
Pods (ATPs). The contractor will provide 95 Sniper
ATPs for the Royal Saudi Air Force and will supply 35
Compact Multiband Data Link, 70 Infrared Search and
Track (IRST) systems, 75 IRST pylons, and spares. Work
will be performed at Orlando, Fla., and is expected to be
completed by Dec. 31, 2019. This award is the result of a
source-directed/sole-source acquisition. Lockheed Martin Corp., Grand Prairie, Texas, was
awarded a $9,036,199 modification (P00006) to a previously
awarded cost-plus-incentive-fee contract (W31P4Q12-C-0001) for services in support of the PATRIOT
Advanced Capability-3. The cumulative total face value
Ha
rsh
Env
iro
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of this contract is $68,999,656. Work
will be performed in Camden, Ark., and
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amount
of
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Arsenal, Ala., is the contracting activity. Raytheon Co., Missile Systems,
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contract (FA8675-10-C-0011) for the
delivery of modified control sections for
the HARM missile (AGM-88). This
modification provides for the exercise
of the option for Lot 2 production of
350 HARM control section modification
units. The total cumulative face value
of the contract is $30,796,174. Work
will be performed at Tucson, Ariz., and
is expected to be completed by Sept.
30, 2015
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14
14 High
High Frequency
Frequency Electronics
Electronics
P a s t e r n a c k
Enterprises, Inc.,
manufacturer of RF
and microwave components, announced
that
Terry
G.
Jarnigan
has
been named Chief
Executive Officer and member of
Pasternack’s Board of Directors, where
he will be responsible for the company’s overall strategy and management. Mr. Jarnigan joined Pasternack
in 2010 as Vice President of Business
Development and most recently held
the title of President. Prior to joining Pasternack, Mr. Jarnigan served
as President and CEO of Tri-Star
Electronics Intertnational, Inc.
National Instruments has relocated its three separate, existing Silicon
Valley groups to one location in Santa
Clara, Calif. The move will reinforce
NI’s commitment to driving growth
in the RF market while also boosting
efficiency by bringing employees from
NI’s field sales engineering group,
Phase Matrix, and Ettus together
under one roof. This location will provide NI proximity-based collaboration
among R&D engineers, the ability to
attract local RF/microwave talent, and
opportunities to deepen relationships
with partner universities Stanford and
UC Berkeley. The new location is the
National Instruments Silicon Valley
Branch Office, 4600 Patrick Henry
Drive, Santa Clara, CA 95054.
Pulse Electronics, a provider of cutting edge electronic components for
the wireless and wired communications, power management, military/
aerospace, and automotive industries,
has developed a unique process that
uses AWR’s Microwave Office® circuit design software for the design and
optimization of its maximum efficiency
LTE small cell base stations. Pulse
is able to design, tune, and optimize its
antenna systems through a cross-company design flow of Microwave Office
combined with Optenni’s Optenni Lab
matching-circuit generation and antenna analysis software.
Agilent Technologies Inc. and
Tyndall National Institute at
University College Cork opened a
new laboratory for research and teaching in next-generation wireless communications. The state-of-the-art laboratory at Tyndall will enable advanced
training and research on radio frequency integrated circuits for high-speed
wireless data communications.
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low as 0.5 dB, and isolation as high
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LNA
Custom MMIC announced the
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Filter
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Richardson RFPD, Inc. announced
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16 High Frequency Electronics
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The BPI series of power dividers feature a previously unattainable isolation between channels in excess of
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VCO
Resistors
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18 High Frequency Electronics
Two high-precision hermetically
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Z-Communications, Inc. announced
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Sensors
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20 High Frequency Electronics
Attenuator
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E
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I
G
:
I N C .
R E L C O M M T E C H N O L O G I E S ,
6 1 0 B E A M S T R E E T , S A L I S B U R Y, M A R Y L A N D 2 1 8 0 1
T E L E P H O N E ( 4 1 0 ) 7 4 9 - 4 4 8 8 , FA X ( 4 1 0 ) 8 6 0 - 2 3 2 7
w w w . r e l c o m m t e c h . c o m
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High Frequency Design
EU Standards
EU Power Limitations on
ZigBee-Type Waveforms
By Boris Aleiner
This paper examines
RF Power limitations
imposed on ZigBee-type
waveforms by European
r e g u l a t i o n s .
Measurements
done
according to ETSI recommendations find
that the safe level of transmit RF power is to
be 12 dBm.
Examining RF power
limitations imposed on
ZigBee-type waveforms
by European regulations.
Introduction
One of the most popular M2M (Machineto-machine) wireless protocols is ZigBee. It is
designed for low cost low power digital radios,
based on IEEE 802.15.4 and used for personal
area networks. It provides spread-spectrumtype communications on 16 channels from
ISM frequency band with data rate of 250
kb/s. Its applications include wireless light
switches, electrical meters, solar-panel communications, etc.
In Europe ZigBee is regulated by ETSI
(European Telecommunications Standards
Institute).
The European standard, ETSI EN 300 328
[1], regulates maximum transmitted RF power
by two clauses: Maximum Transmit Power
(4.3.1) and Maximum e.i.r.p. Spectral Density
(4.3.2). The first parameter limits power to
100 mW; the second limit is 10 mW/Hz. While
the first clause is waveform independent
(since it is talking about total averaged power),
the second depends on the specifics of a given
waveform’s spectrum.
Clearly, the limit of Maximum Spectral
Density is more stringent. ZigBee bandwidth
is 5 MHz, so in the best-case scenario it would
increase the limit by 7 dBm in 5 MHz bandwidth (10log 5) to 17dBm, which is 3 dB lower
than Maximum Transmit Power. We cannot
expect that “best case scenario” though, since
the waveform’s main lobe is only 3 MHz wide
22 High Frequency Electronics
(see ZigBee Waveform Spectrum, Appendix 1),
which would reduce that number to 15 dBm.
And, since ETSI clause 4.3.2 interprets that
limit as 10 mW over ANY 1 MHz portion of the
spectrum, a limit of 15 dBm could be reduced
even further.
In order to determine actual limitations, a
set of measurements on ZigBee transmitters
is conducted. Input RF power levels are
swept and the corresponding values of Power
Spectrum Density and output RF Transmit
Power are collected. Values of output RF
transmit power at which limit of Power
Spectrum Density (10 mW / MHz) is reached
are recorded. These are the values at which
the ZigBee transmitter is still ETSI compliant.
This method helps to skip costly measurements of Power Spectrum Density and instead
uses relatively cheap output RF Transmit
Power measurements. It is found that RF output power level of at least up to 12 dBm is still
acceptable.
Measurements
Measurements are done on a typical
ZigBee module over power/frequency range.
The module operates as an independent transmitter. Its input power is set by chipset at a
number of levels. At each of set levels output
RF power is measured by an an averaged
power meter. Power Spectrum Density is measured at the same levels by a spectrum analyzer, according to the method described in
section 5.7.3.1 of EN 300 328 [1].
Having both values (PSD and output RF
power) measured at the same input power
levels allows us to set a correspondence
between them. That is, we can find output RF
power at the settings at which PSD reaches
10mW/MHz (see Fig. 1). The found RF power
is the threshold at which the ZigBee module is
still standard compliant.
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16
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63
37
13
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32
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• Protected under U.S. Patent 7,348,854
®
ISO 9001
®
ISO 14001 AS 9100
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
The Design Engineers Search Engine finds the model you need, Instantly • For detailed performance specs & shopping online see
U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS
416 rev Z
High Frequency Design
EU Standards
Fig. 1 • Finding RF Output power for ETSI compliance.
These measurements are repeated over the ISM frequency band (to see if module’s matching circuitry is
affecting the results).
The results are given in Fig. 1.
They are in-line with expectations. Power Spectral
Density is a Fourier transformation of average power
(chapter 2.7 of [2]). Their relationship is governed by the
formula:
(1)
Where:
P – is average RF power
S (f) – is Power Spectral Density
T1 = ∞
Bandwidth dependence of S (f) is defined in the following way:
S (f) = Ssd, if –BW<f<BW; and S (f) = 0 otherwise. (2)
24 High Frequency Electronics
Where – Ssd is the PSD in a given BW.
That is, for infinite bandwidth – both representations
of output powers (Transmit RF Power and Power Spectral
Density) are the same. However, for band-limited power
– they are different. Transmit Power is a total value of an
average power, while Power Spectral Density – is a power
level in a given bandwidth.
ETSI limitations are given for a 1 MHz bandwidth.
ZigBee main lobe bandwidth is 3 MHz (see Appendix 1).
It means that for ZigBee waveforms we should expect
recalculated limitations to increase 3-fold (4.77 dB) to
reach 14.77 dBm. That is exactly the value we see in the
middle of our frequency band. Reduced numbers at the
ends of ISM frequency band reflect BW matching imperfections of the ZigBee module itself.
The measured results show that it is possible to reach
the expected limit (14.77 dBm) in principle. However, it is
important to remember that the output power cannot
exceed this limit under any circumstances (over input set-
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Web Site: www.microwavecomponentsinc.com
AS 9120
ISO 9001:2000
CERTIFIED
High Frequency Design
EU Standards
tings, voltage variations, temperature, and frequency
range). ZigBee module’s settings are accurate within a dB
or so, frequency range gives another dB of uncertainty, and
temperature/accuracy-of-measurements accounts for an
additional dB or more. That is, the safe limit for RF output
power compliant to ETSI standard is around 12 dBm.
Conclusions
This paper examines RF power limitations imposed
on ZigBee-type waveforms by ETSI regulations. It was
noted that the standard regulates output RF power by
two clauses (Maximum Transmit Power and Power
Spectral Density) and explained that the limit imposed
by Power Spectral Density is more stringent.
That limit was recalculated for a ZigBee waveform.
The result was 14.77 dBm in a 3 MHz BW. Measurements
(done on a typical ZigBee module according to the method
given in ETSI standard) confirm, that at RF output power
level of 14.77 dBm the module meets Power Spectral
Density limit of 10 mW / MHz.
However, the conditions under which the limit is
reached were idealized: input power setting was implicitly assumed to be as accurate as needed, the measurements were done at room temperature only and with a
very accurate source of DC power supply. Besides that, no
Appendix 1 • ZigBee waveform spectrum.
variations of accuracy-of-measurements were taken into
consideration. In reality, though, any mismatch would
alter the output waveform, reducing RF power level at
which the PSD limit is reached. In addition, input power
settings are discrete, and variations in temperature/DC/
accuracy-of-measurements should be taken into consideration, as well. All of the above can reduce the limit to as
much as 3.5 dB.
That is, an RF output power level of 12 dBm assures
ZigBee compliance to European standards.
References
1. Final draft ETSI EN 300 328 V 1.7.1 (2006-05)
2. Simon Haykin “Communication Systems” second
edition, John Wiley & Sons, 1983
About the Author:
Boris Aleiner earned his MSEE degree from Leningrad
Polytechnic University, St. Petersburg, Russia, and Drexel
University, Philadelphia, PA. Over his career as a wireless RF engineer he has worked for major telecommunication companies (AT&T/Lucent/Motorola/Philips/NXP).
He has published a number of papers and holds several
US Patents on the subject of RF and wireless components/subsystems. Currently he is a consultant.
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26 High Frequency Electronics
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High Frequency Design
SPICE Modeling
A Power MOSFET SPICE Model
with Built-In Model Generator
By Andre Adrian
Introduction
The electronic circuit simulator SPICE has built-in MOSFET models.
These models are based on lateral MOSFETs with a bulk connection. A
power MOSFET has a vertical structure without bulk connection. This
article presents the power function power MOSFET (PFPM) SPICE model.
The novelties in PFPM are the built-in model generators. The user provides the PFPM model
generators with some coordinate points from the transfer characteristics, output characteristics, capacitances characteristics and the body diode forward characteristics. We can get the
characteristics points from the data sheet or from measurements [1], [2]. At the beginning of
every simulation run, these characteristics points are used to calculate power function coefficients. Changing the SPICE model
is now as easy as changing the
schematic.
Changing the SPICE
model is now as easy as
changing the schematic.
Power MOSFET Equivalent Circuit
Figure 1 shows the power
MOSFET equivalent circuit [3]. It
has a voltage-dependent current
source G to simulate the transconductance gfs and the drain-source
on-state resistance Rdson, a bodydrain diode D and three parasitic
capacities Cgs, Cds and Cgd. The
bond wire inductances are Ls, Ld
and Lg. Rg models the distributed
resistance of the gate structure.
Model Verification
Figure 1 • Power MOSFET equivalent circuit.
For model verification we use a
Hartley oscillator circuit. The HuthKühn variant of the Hartley circuit uses the Cgd capacity as one of the three feedback reactances [4]. The inductances L1, L2 complete the feedback network. The parasitic capacities Cgs
and Cds are parallel to the inductances and influence the oscillator frequency. If the SPICE
simulation and the lab buildup agree in resonance frequency and in wave form, we can assume
that the model reflects reality. The PFPM is able to simulate the MOSFET behavior for HF and
VHF frequencies in small-signal and large-signal applications. But the model is not complete.
Temperature effects are not modeled.
The inductance Lstray3 is created by the conductor path between source and ground. A
straight wire of 0.6mm diameter has an inductance of 7nH per centimeter. The circuit oscillates
at 21MHz. If there are only stray inductances in the circuit, oscillation frequency is 77MHz. The
unity gain frequency fT is not given in a MOSFET datasheet. But we can add up the times for
switching tdon, tr, tdoff and tf to calculate the time for one period of a triangle wave that swings
28 High Frequency Electronics
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High Frequency Design
SPICE Modeling
Figure 2 • Huth-Kühn (Hartley) oscillator. All frequency determining components are in the dashed lines box. The
load R1, R2, … will decrease the oscillator frequency a bit.
Picture 1 • Breadboard implementation of Huth-Kühn
oscillator.
Figure 3 • SPICE simulation of Isource (black) and
Vdrain (blue).
between 10% and 90% of the drain supply voltage. The Infineon MOSFET IPP530N15N3 [5] has a typical period
length of 34ns or a “triangle frequency” of 29.4MHz.
The components left of resistor R1 and right of R2 simulate the oscilloscope probe (Cpr, Rpr) and the AC mode of
the oscilloscope (Cac, Ri). The transistor Q1 provides a low impedance bias voltage for the MOSFET DUT (device
under test). The capacitors C1 to C5 are blocking/filter capacities. Ceramic or mica capacitors with short leads or SMD
components work best. The coils L1 and L2 have an inductance of 70nH. The additional 20nH are stray inductance.
Lstray3 has 10nH. Fig. 3 shows the Isource and Vdrain waveforms in LTSpice simulation. Pic. 2 shows an oscilloscope
screen shot. The Tektronix 7A26 amplifier in the 7834 chassis has 200MHz bandwidth.
The simulation waveform shows a saturation “dent” at the top of every Isource wave. The dent is less prominent
in the oscilloscope picture. The bottom of the Vdrain curve in the oscilloscope has some ripple, which the simulation
waveform has not.
And now we look how the model works and how the model parameters are extracted from the datasheet.
30 High Frequency Electronics
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High Frequency Design
SPICE Modeling
The Body Diode Forward Current Function
The most simple transfer function for a MOSFET body diode is
the piecewise linear model (PWL). The PWL function is monotonically increasing, but not strictly increasing. The PWL characteristic
has a kink. In nature everything is continuous. This is true for any
MOSFET curve, too.
The power function (PF) is a strictly monotonic function for all
valid x values. The square function, the square root function and
the reciprocal function are power functions. In a real diode, the
slope is not constant, but changes with the forward current. The
coefficients threshold voltage Vto, scaling factor c and exponent r
control the PF. Using two points from the current–voltage characteristic, c and r can be calculated. This parameter extraction is
without error, if the characteristic is a PF.
From the IPP530N15N3 MOSFET datasheet we extract Vto as
0.7V, point one as 0.75V; 1A and point two as 0.95V; 20A.
Picture 2 • Oscilloscope screen shot of Isource
and Vdrain.
The variables x1, x2 are forward voltage Vf minus threshold voltage Vto. This substitution eliminates Vto. The
power functions for the two points are:
First step is to resolve the left equation to c, then replace c in the second equation and resolve for r. With r and one
point we can calculate c.
For the IPP530N15N3 body diode the PF parameters are:
r=1.861
c=264.044
The power function for If is:
Figure 4 shows the PWL model (red line) and the PF model (blue
line). The blue line should agree with the body diode forward characteristics in the data sheet.
The MOSFET Transfer Function
The MOSFET transfer characteristics and the body diode forward
characteristics have the same shape. The difference is in the threshold
voltage. The MOSFET gate needs a threshold voltage Vto of 3 to 5 volts
to allow some drain current to flow.
Figure 4 • Diode Transfer function: x axis
shows forward voltage, y axis shows
forward current.
32 High Frequency Electronics
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High Frequency Design
SPICE Modeling
In the transfer characteristics we find point one as 4.88V; 5A and point two as 5.59V; 15A. The model generator
parameters are:
The power function coefficients for the transfer function are:
r=2.174
c=4.23
The MOSFET Output Function
The MOSFET output function describes the amplification. The output characteristics show that there are two independent variables, Vds
and Vgs and one dependent variable Id. The drain connector of the
MOSFET is used for input and output. For every time step, SPICE uses
first the drain as input to get the actual drain/source voltage (Vds) and
second to drain the drain current (Id) or the body diode current.
The Output Function Regions
The output function has three regions in the Shichman-Hodges
MOSFET model: the cutoff region, the ohmic or linear region and the
saturated region. The SPICE NMOS model sets in the cutoff region the
drain current to zero. We do the same.
The PFPM model uses different functions for ohmic and saturated
region drain current and the min function to combine them. The min
function creates a characteristic with a kink. Averaging is the feat to
Figure 5 • MOSFET Transfer function: x
smooth the kink. At every time step the drain currents for three differaxis shows gate to source voltage; y axis
ent gate voltages are calculated. The simulation uses the average curshows drain current.
rent for further processing.
The ohmic region output function uses the square root of Vds divided
by the Rdson resistance to calculate Id. The output function for the linear region is the MOSFET transfer function.
The output function Id() uses gate/source voltage Vgs and drain/source voltage Vds as input variables. Output
variable is the drain current Id.
The Idavg() function performs the smoothing. The parameter d is the distance in volt between the Vgs values.
Parasitic Capacities
The parasitic capacities in a power MOSFET are large and voltage dependent. Together with the bond wires inductances or with other (stray) reactances they can form LC circuits which cause ringing (very high frequency oscillation).
The power MOSFET has three parasitic capacities. Cds is the capacity of the body (reverse) diode. Every diode is a
varactor (capacity diode). Cgs and Cgd are capacities between gate and the channel.
34 High Frequency Electronics
In a datasheet we find the capacities Ciss, Coss and Crss. The relations between these parameters and the MOSFET model parameters
are simple:
For the power functions we need the zero volts capacities and two
more capacities. In the IPP530N15N3 MOSFET datasheet we find:
Figure 6 • Output function: x axis shows
Vds in volt; y axis shows Id in ampere.
Parameter lines are Vgs in volt. Values
from bottom to top are 4.5V to 7V in 0.5V
steps.
The Cgs capacity is not very voltage dependent and is modeled as a
constant capacity with:
A power function is used to model the voltage dependent capacities Cgd and Cds. With independent variable x
for the voltage across the capacity and the dependent variable C for the resulting capacity the formula is:
C0 is the varactor capacity at zero volts (Cgd0 or Cds0).
The parameters c and r are again the power function coefficients. We introduce y=C/C0 to eliminate C0:
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For the parameter estimation we need two points from
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generator. We need a recursive (iterative) formula. The
Ansatz (beginning) is the same as above. Isolate a coefficient and plug it into the second formula. First we calculate
the Cgd power function coefficients:
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High Frequency Design
SPICE Modeling
The first formula is resolved for c. We replace c in the second formula and resolve for r. We see r at the left and at
the right of the equal sign:
To calculate r, we start with the value -1 for r and use the recursive formula until convergence. We recognize convergence if the difference between the last two r values is below a threshold.
The limit of our function value is:
After six iterations we are below an error of 5%. The datasheet
tells us that Coss at 75V Vds is typical 80pF and maximum 106pF.
The differences between MOSFETs of the same type are larger than
our modeling error. Because we need this recursion run only once, we
can iterate ten times to get a better r value.
Calculating c is easy.
Figure 7 • Voltage dependent C characteristics: x axis shows Vds in volts; y axis shows
capacity in Pico farad. Red curve is for Cgd,
blue for Cds and magenta for Cgs.
36 High Frequency Electronics
The diagram Figure 7 shows the Cgd voltage to capacity curve in red. We see the typical hyperbolic (reciprocal)
shape of a varactor curve.
Capacity to Charge Conversion
We cannot use the voltage to capacity function in SPICE, we need a voltage to charge (Q) function. The charge is
the integral of the capacity.
The final step is to combine the parameters into k, c and ρ:
The calculations for Cds are the same.
After six iterations with the start value -1 we get:
Figure 8 • Power MOSFET equivalent circuit with all parameters.
37
High Frequency Design
SPICE Modeling
Usage of PFPM Model Generators
LTSpice is a well-known SPICE implementation. One nice LTSpice feature is that we can use the LTSpice schematics editor to implement the PFPM model generators and the PFPM model. Figure 8 shows the power MOSFET
equivalent circuit again, but now with all details. Working with SPICE models was never easier.
The LTSpice model files can be found at http://www.andreadrian.de/pfpm.
About the Author:
Andre Adrian lives in Germany. After an apprenticeship at Siemens in Frankfurt he obtained a Computer Science
degree from the Polytechnic (Fachhochschule) in Wiesbaden. He works for the German Air Traffic Control agency in
the area of mission-critical, redundant, real-time computer systems.
References
[1] International Rectifier; AN-957: Measuring HEXFET(R) MOSFET Characteristics
[2] International Rectifier; AN-1001: A More Realistic Characterization of Power MOSFET Output Capacitance
Coss
[3] International Rectifier, Vrej Barkhordarian; AN-1084: Power MOSFET Basics
[4] Huth GmbH, Ludwig Kühn; German patent DE 310152, Schaltungsweise zur Schwingungserzeugung mit
Vakuumröhren; applied 28.Sep.1917
[5] Infineon; OptiMOS(TM) 3 Power-Transistor IPP530N15N3, Rev. 2.5; 2010-07-13
2013
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Amplifier
MITEQ’s Model JS5-26004000-2710P is a 26 to 40 GHz low-noise
high gain amplifier with only 2.7
dB maximum noise figure and +10
dBm minimum P1dB. It has a gain
of 36 dB minimum in a small hermetically sealed package with field
replaceable K-connectors. MIL-883
A new S-band 2.5 kW peak power
drop-in circulator operates from 2.9
to 3.3 GHz. With insertion loss of
less than 0.6 dB and return loss and
isolation over 19 dB, the circulator
is ideal to duplex an antenna with
HPA and a receiver. It is customized
to withstand 250 W of forward and
150 W of reverse power at the same
instance without arcing or corona
failures.
Renaissance Electronics
rec-usa.com
High Frequency Products
NEW PRODUCTS
Oscilloscope
Tektronix, Inc. introduced the new
MSO/DPO70000DX Series of oscilloscopes that feature models with
23 GHz, 25 GHz, and 33 GHz bandwidth and enhanced tools for debugging digital and analog circuits.
The company also announced the
world’s fastest and lowest noise oscilloscope probe with 33 GHz bandwidth and industry leading sensitivity for low-voltage, high-speed
serial and RF signals.
Tektronix
tektronix.com
enables design engineers to input
their own waveguide rectangular
(WR) designations to quickly perform complex conversions and determine operating parameters. By
entering WR dimensions, a user can
generate a range of material specifications including recommended
operating frequency rate (GHz),
flange type, and waveguide dimensions (in.).
pacitors in the CLR79/81 and low
ESR CLR 90/91 series (up to 100V). Extending the MIL-PRF-39006 Series beyond “M” level components,
which feature a failure rate of 1%
per 1,000 hours, the “P” and “R” level capacitors have completed 10,000
hours of life testing and exhibit respective failure rates of 0.1% and
0.01% per 1,000 hours. AVX Corp.
avxtantalum.com
Microwave Development Labs
mdllab.com
Diplexer
Cable Assembly
The Lab-Flex® Q series utilizes the
highest grade, radiation resistant,
non-outgassing materials to insure
maximum life and high level performance. Construction consists of a
robust, low loss, extruded PTFE dielectric housed in a triple shielded
outer conductor system for maximum shielding effectiveness. Available in a wide variety of connector
combinations, these assemblies
come in cable sizes ranging from
0.050” to 0.300” in diameter, operating from DC – 65 GHz.
App Note
A new application note from AWR
highlights the use of AWR’s Microwave Office® circuit design software to develop a Q- to E-band doubler and a K- to E-band quadrupler
circuit (including a medium E-band
power amplifier) for millimeterwave wireless systems. The design
effort resulted in an increase in
gain as well as output power, two
critical criteria for E-band systems.
Florida RF Labs
emc-rflabs.com
AWR Corp.
awrcorp.com
Waveguide App
Capacitors
Microwave Development Labs released a free rigid waveguide slide
rule app for mobile devices. The app
AVX Corp. is now a qualified supplier of specified “P” and “R” level
MIL-PRF-39006 wet tantalum ca-
Mini-Circuits’ model ZDPLX-2150+
50Ω, DC-2150 MHz (DC-10, 502150 MHz), coaxial diplexer is a
low-pass + high-pass combination
device. Low pass port is designed for
DC to 10 MHz and high pass port is
designed for 50 to 2150 MHz. This
diplexer is used in satellite, CATV,
set-top box, modem, video equipment and multiband radio systems.
Mini-Circuits
minicircuits.com
Receiver
The LTM9013 is a wideband RF-todigital micromodule receiver that
includes a high performance dual
14-bit, 310 Msps analog-to-digital
converter, a high IIP3 I/Q demodulator, two variable gain amplifiers,
and 300 MHz lowpass filters. The
LTM9013’s quadrature sampling
architecture enables acquisition of
up to 300 MHz of signal bandwidth
43
High Frequency Products
NEW PRODUCTS
with IMD3 performance of 66 dB
across the entire band.
Linear Technology
linear.com
nection of coaxial components or
sub-systems. Construction includes
a silver-plated copper-clad steel
center conductor which maintains
the shape after bending. The outer
shield is copper braid, tin soaked,
which minimizes signal leakage
and at the same time is flexible
for easy bend. Dielectric is low loss
PTFE. Connectors have passivated
stainless-steel coupling nut over a
gold plated connector body and gold
plated, brass center conductor.
tions defined in 3GPP Releases 8
and 9. Agilent Technologies
agilent.com
Mini-Circuits
minicircuits.com
Connector
Oscilloscope
Coupler
KRYTAR, Inc. announced a new
Directional Coupler operating from
0.5 to 8.0 GHz frequency range offering superior low insertion loss,
high directivity and tight coupling.
The Model 158006 offers the widest
frequency coverage in a single package on the market and provides
superior performance. KRYTAR’s
technological advances provide excellent operating performance of
this new stripline design unit.
B&K Precision’s new 2550 Series
of oscilloscopes adds four 2-channel
models (2552, 2554, 2556, 2558) and
four 4-channel models (2553, 2555,
2557, 2559) ranging from 70 MHz to
300 MHz bandwidth with 2 GSa/s
sampling rates and 24 kpts/Ch
memory. These high performance
digital oscilloscopes cover a range
of applications in R&D, service and
repair, and education.
RFMW announced design and
sales support for the Rosenberger
32K243-40ML5 surface mount coaxial SMA female edge mount connector. The 32K243-40ML5 combines SMT ease-of-use with the
ruggedness of a clamp style, edgemount design. Rosenberger’s new
connector has demonstrated performance at 26GHz with an optimized
PCB footprint. Rosenberger offers
technical support to customize designs based on customer use.
RFMW
rfmw.com
B&K Precision
bkprecision.com
KRYTAR
krytar.com
Filter
LTE App Note
Cable
Mini-Circuits’ 50Ω, DC to 18 GHz,
Model 086 SMRSM Hand-Flex Coaxial Cables are ideal for intercon-
44 High Frequency Electronics
The "3GPP Long Term Evolution:
System Overview, Product Development, and Test Challenges" application note describes the Long Term
Evolution (LTE) of the universal
mobile telecommunication system
(UMTS) standard by the 3rd Generation Partnership Project (3GPP)
and covers the core LTE specifica-
RFMW, Ltd. announced design and
sales support for TriQuint Semiconductor 885033, a 2.4 GHz Wireless
LAN / Bluetooth and LTE coexistence filter. The 885033 features
high rejection in B38/40 bands.
Performance is rated over a large
temperature range (-30 to +85 degrees C) and the TriQuint 885033
is housed in an industry leading 1.4
x 1.2 x 0.46mm miniature package.
RFMW
rfmw.com
High Frequency Products
NEW PRODUCTS
Connector
Two new N male connectors simplify the installation process by
eliminating the need to trim the
braid during cable preparation.
The RFN-1006-49I features a solderless captive pin and the RFN1006-4I features a crimp pin. Both
connectors are compatible for high
performance cables such as Times
Microwave LMR®-400, CommScope
CNT®-400, Belden 9913, and RF
Industries RFI-CU400™. Combination hex/knurl coupling nuts allow
for tightening by hand or wrench.
and 1 MHz lowpass or band-pass
filter. The selections are 6 poles Butterworth, Elliptic, Bessel lowpass or
six pole full, 1/3 or 1/6 octave bandpass filter. Price is $7.05 each at
1,000 pieces for a SOIC-16 plastic
package.
Mixed Signal Integration Corp.
mix-sig.com
large range of lengths. In order to
achieve the low intermodulation
level of -155 dBm at 6 GHz with 2
tones of +26 dBm, the cable material consists of a silver plated copper center conductor with PTFE dielectric and a copper/tin composite
outer conductor. Connector bodies
are of tri-metal plated brass with no
ferrous parts.
AtlanTecRF
atlantecrf.com
RF Industries
rfindustries.com
Combiner
Bench Test Filters
The MLBF-Series Bench test filters
are ideal for production test sets,
laboratory tests and test equipment
racks where filtering of microwave
signals is essential. These bench
top filter assemblies provide either
Bandpass or Bandreject (notch) filter types depending on application.
Frequency coverage is dependent on
which production filter type is chosen. Frequency coverage for Bandpass models range from 500 MHz to
50 GHz while the Bandreject models cover 500 MHz to 20 GHz.
Micro Lambda Wireless
microlambdawireless.com
Mixer
The MSMXVHF mixer with selectable high frequency lowpass/bandpass filter is a CMOS switched-capacitor integrated circuit that has
an independent 500 MHz mixer
Model SWP-27340304-28-S1 is a
Ka band waveguide 4 way power
combiner offering minimum 5 GHz
operational bandwidth in the frequency range of 26.5 to 40 GHz. The
power combiner exhibits less than
0.5 dB insertion loss and more than
20 dB port isolation in the operation
bandwidth. It exhibits excellent
phase and amplitude balance and
is equipped with self-locking phase
trimming tuners to further enhance
phase balance fine adjustment capacity for some phase balance critical applications. With slight isolation performance degradation, the
power combiner is suitable for full
waveguide operation.
SAGE Millimeter
sagemillimeter.com
Cable Assemblies
AtlanTecRF has stock of Low PIM
cable assemblies designed specifically for applications where it is
essential to have a low level of passive intermodulation products. This
newly launched series is available
in two convenient diameters and a
Amp
Custom MMIC announced a 5-11
GHz ultra-low noise amplifier. The
CMD132P3 presents an ultralow noise figure of 1.3 dB, delivers
greater than 20 dB of gain across
the entire bandwidth, and has a corresponding output 1 dB compression
point of +10 dBm. It is housed in a
RoHS-compliant, 3 x 3 mm QFN
plastic surface mount package, requires a single supply voltage of
+3.6 V at 30 mA. Ideal for microwave radios and C- and X-band applications where small size and low
power consumption are needed, the
CMD132P3 is also suitable for pointto-point radios, point-to-multipoint
radios, military and space applications, and test instrumentation.
Custom MMIC
custommmic.com
Power Sensor
Rohde & Schwarz added the R&S
NRP-Z58 to its portfolio of power
sensors. The sensor’s high measur-
45
Product Showcase
High Frequency Products
NEW PRODUCTS
ing speed of over 300 measurements per second in buffered mode
allows especially fast power measurements. Range is 55 dB (–35
dBm to 20 dBm). When performing
relative measurements such as amplification and reflection measurements, the R&S NRP-Z58 delivers
extremely precise measurement
results thanks to its high linearity
of 0.01 dB.
Rohde & Schwarz
rohde-schwarz.com
HFE’s Product Showcase
Classified Advertising
Your ad will stand out
when it’s displayed in our
Product Showcase!
For more information, or to
place your ad, please
contact:
Handheld VNAs
Anritsu Company’s MS2027C and
MS2037C, two members of its VNA
Master handheld vector network
analyzer series, bring the inherent advantages of VNA Master to
15 GHz frequency applications.
Providing best-in-class measurement speed and high accuracy in
a compact design measuring as
small as 8.3 x 12.4 x 3.1 in., the new
MS2027C and MS2037C are ideal
for demanding field use environments including aerospace and defense, SATCOM, commercial wireless backhaul, and research.
Joanne Frangides
Tel : 201-666-6698
Fax: 201-666-6698
joanne@
highfrequencyelectronics
.com
Anritsu Company
anritsu.com
Clock Buffer
VCO
Modco’s Model LVC440-495VS
tunes 440 MHz to 495 MHz and is
used in handheld wireless RF applications. A bias voltage of 1.5 V
delivers + 2.0 dBm power with only
5 ma current consumption.
46 High Frequency Electronics
Phase noise is -94 dBc @ 10 kHz offset. Package size is 0.175 inch square
with height of .075 inch.
Modco
modcoinc.com
Analog Devices’ clock buffer and divider IC combines high-speed, extremely low jitter (41 fs across the 12
kHz to 20 MHz band) and selectable
division capability.
Analog Devices
analog.com
Product Showcase
www.DudleyLab.com
Page 1 General Test Equip
Page 2 Mini-Circuits
Page 3 Power Supplies
Page 4 Oscilloscopes Le Croy
Page 5 RF Power Meters
Page 6 Waveguide Parts Section
Page 7 RF Coaxial Parts
Page 8 Manuals Free pdf Download
Page 9 Solid State RF Amplifiers
Page 10 Tube Type RF Amps TWT
Page 11 Miscellaneous Repair Parts
VOICE:
EMAIL:
WEB:
732.240.6895
hdudley@dudleylab.com
www.dudleylab.com
30
Years
Advanced
Switch
Technology
754 Fortune Cr, Kingston, ON
K7P 2T3, Canada.
613 384 3939
info@astswitch.com
Our line of Waveguide, Coaxial and Dual Switches are the most
reliable in the industry, but don’t just take our word for it. Join
the hundreds of satisfied customers who use our switches every
day.
When only the best will do
www.highfrequencyelectronics.com
Product Highlights
Between-Series Adapters
SGMC Microwave announced SMA to SMM Right
Angle (Between-Series Adapters) featuring: frequency
range: DC - 26.5 GHz; low VSWR and insertion loss; internally swept right angle design; corrosion-resistant 303
stainless steel (passivated); ruggedized construction for
repeatability and reliability.
SGMC Microwave
sgmcmicrowave.com
Coupler
Model SWZ-27302320-28-SB is a 3 dB Ka-band short
slot coupler. It is based on traditional short slot coupling
mechanism, which features two balanced output signals
with 90 degrees phase difference. The coupler is constructed with machined brass waveguide housings. With
48 High Frequency Electronics
Coax Contacts
Looking for an RF (DC to 26.5 GHz) addition to the
VPX Platform? Check out SV Microwave’s latest high
density, high performance VITA 67 offering. Our floating
SMPM coaxial contacts ensure excellent RF performance
in any mating condition. These parts are also designed for
side-by-side implementation with VITA 46 hardware and
can be cabled to Ø.086 and smaller coaxial cable types.
SV Microwave
svmicro.com
detailed electrical/mechanical design and precision fabrication process, the coupler offers instrumentation quality
and superior RF performance.
SAGE Millimeter
sagemillimeter.com
Product Highlights
Sensor/Attenuator Combo
LadyBug Technologies now offers custom sensor and
attenuator combinations. The sensor and attenuator are
characterized together after final calibration to offer
superior performance and accuracy. The product is delivered with a calibration table along with the sensor’s certificates. The attenuator and sensor sets are available on
all LadyBug sensors including its True RMS, Peak &
Pulse, and Pulse profiling sensors.
GNSS Simulator
Rohde & Schwarz provides developers of satellitebased navigation instruments with a global navigation
satellite system (GNSS) simulator, which runs on the
R&S SMBV100A vector signal generator. The new R&S
SMBV-K101 option allows developers in the automotive
and wireless communications industries, for example, to
test GNSS receivers for specific effects such as obscuration and multipath propagation.
LadyBug Technologies
ladybug-tech.com
Rohde & Schwarz
rohde-schwarz.com
ADC Board
Ultraview Corp. announced a fast PCIe data acquisition board allowing uninterrupted acquisition of two concurrent 2 GSPS 12-bit A/D channels or a single channel at
up to 4 GSPS. The AD12-2000x2’s unique combination of
proprietary low-noise, low-distortion DC - 2 GHz front
end, fast (40 ns) trigger latency, deep 8GB on-board mem-
ory, and ability to be driven from either a fixed internal
clock or an external clock enables new capabilities in
SIGINT, surveillance, missile testing, RADAR and other
applications.
Ultraview Corp.
ultraviewcorp.com
49
Product Highlights
Spectrum Analyzer
Saelig Company introduced the GSP-930 - a 3GHz
Spectrum Analyzer designed on a new generation platform to offer high stability, a large screen display, light
weight and compact size. Its advanced Spectrogram and
Topography features greatly expand the application
range of this versatile RF analysis instrument.
Saelig Company
saelig.com
Delay Matrix
Renaissance has designed a 12 x 12 Programmable
Delay Line (PDL) Matrix that can be used to simulate
targets for Phased Array Radar and Receiver optimization. Each of the 12 inputs is connected to dividers, programmable attenuators and a programmable delay line
50 High Frequency Electronics
Isolator
Model SNF-28-I1 is a full waveguide band junction
isolator covering the frequency range from 26.5 to 40 GHz
in WR-28 waveguide band. The isolator offers 0.4 dB typical insertion loss and 16 dB min. isolation. Forward power
handling is 2 watts minimum and operating temperature
is from -35 to +60 °C. The isolator measures 1.25” (W) x
0.77” (H) x 0.50” (T).
SAGE Millimeter
sagemillimeter.com
matrix. The amplitude and phase are controlled by custom software with custom defines UDP protocols.
Renaissance Electronics
rec-usa.com
Product Highlights
Amplifier
MITEQ’s new Model JS2-26004000-29-0P is a stateof-the-art 26 to 40 GHz low-noise low gain amplifier with
only 2.9 dB maximum noise figure. This model has a gain
of 12 dB minimum in a small hermetically sealed package
with field replaceable K-connectors. MIL-883 screening is
also available. Different options such as high gain, noise
figure and power output are also available.
MITEQ
miteq.com
Signal Analyzer
The PXA signal analyzer is the evolutionary replacement for your current performance signal analyzer. It
provides frequency coverage up to 50 GHz, ensures present and future flexibility through optional measurement
capabilities and hardware expandability, and measures
signals to 325 GHz and beyond with external mixing. The
PXA’s advanced performance, flexibility, capability and
expandability enable you to address demanding applications in aerospace, defense, commercial communications
and more.
Agilent Technologies
agilent.com
Switch
PMI Model No. P4T-50M40G-55-T-292FF is a 50 MHz
to 40.0 GHz, Single Pole, Four Throw, Absorptive Switch.
This switch offers 55 dB of port to port isolation and a
maximum insertion loss of 8 db. It has a switching speed
of 100 ns and is independently TTL controlled. The oper-
ating power is +20 dBm CW and it has a VSWR of 2.5:1
max.
Planar Monolithics Industries
pmi-rf.com
51
Product Highlights
Antenna
RFMW, Ltd. offers design and sales support for
Johanson Technology’s (JTI) chip antenna that can operate in both GPS and GLONASS bands simultaneously.
This SMD Antenna: P/N 1575AT54A0010 is compact (15
x 4 x 3.2 mm) and can replace more expensive patch
antennas offering similar performance in small portable
applications. It exhibits 9.5 dB of return loss while offering a peak gain (YZ Total) of 1.3 dBi and has 2W of power
handling capability.
PC Oscilloscope
Saelig Company introduced PicoScope 9300
Oscilloscopes, which use sequential sampling technology
to measure fast repetitive signals without the need for
expensive real-time sampling hardware. With an input
bandwidth of up to 20 GHz, acquisition of signals with
rise times of up to 17.5 ps is now possible with this sampling adapter which attaches to a standard PC. Precise
time-base stability and accuracy and a resolution of 64 fs
allow accurate jitter characterizations.
RFMW
rfmw.com
Saelig Company
saelig.com
Couplers
Richardson RFPD, Inc. announced it is taking orders
for Anaren Xinger® III Femto Couplers. The Femto family
is a new class of Xinger® couplers which are available in
a miniature 5 mm x 3 mm footprint. As with previously
released scaled-down Xinger® couplers, there is no electrical performance tradeoff with the reduced footprint.
52 High Frequency Electronics
The new devices cover a wide frequency range (700 to
2700 MHz), offer outstanding insertion loss, and 25W
power handling at 105 ºC mounting temperature, making
them ideal for small cell or active antenna systems.
Richardson RFPD
richardsonrfpd.com
Product Highlights
Oscilloscopes
The 2550 series digital storage oscilloscopes deliver
performance and value in 2-channel and 4-channel configurations. With bandwidth from 70 MHz to 300 MHz
and 2 GSa/s sample rates, these oscilloscopes offer 24
kpts/Ch waveform memory, 32 automatic measurements,
and advanced triggering capabilities including math
functions. The 2550 series’ widescreen 7” TFT display
offers a significantly larger viewing area than typical
economy oscilloscopes (5.7”).
B&K Precision
bkprecision.com
Noise Generator
The NoiseWave NW-ATE series, an economical and
rugged programmable Noise Generator, now covering
from 10 MHz up to 40 GHz, is ideal for Military and
SATCOM applications including Ka-band tests such as
BER vs. Eb/No, interference, and jamming. The instrument is fully programmable from the front panel and
Bandpass Filter
Overlapping bands between JTIDS/MIDS and Tactical
Air Navigation (TACAN)/ IFF necessitate two additional
notch filters at 1030 MHz and 1090 MHz, to mitigate IFF
interference and attenuate signals by 50 dB to protect the
JTIDS/MIDS receiver. A common realization scheme for
the three filters is a cascade of two narrow-band notch
filters with a wide-band bandpass filter—a bulky solution. This filter is an integrated solution, designed with
in-house software CKTTOOL by dividing the 962 to 1215
MHz passband into three independent bands.
K&L Microwave
Klmicrowave.com
remotely via GPIB and Ethernet. The output level is controlled by an internal broadband variable attenuator in 1
dB steps.
NoiseWave
noisewave.com
53
Product Highlights
Broadband Amp
Teseq expanded its broadband amplifier line to include
a Class A linear and low distortion model that operates
from 10 kHz to 400 MHz with a rated power level of 260
watts. Used in commercial or in-house EMC test laboratories, the CBA 400M-260 is ideal for automotive, military
and aerospace BCI (bulk current injections) applications
that require testing at higher levels.
Power Sensor
The 52000 series power sensors are complete miniature RF & Microwave power meters. They contain a CPU
which controls the sensor, processes the measurement
results and operates the interface. All measurement data
and settings can be transmitted via a USB interface to
and from a PC. This gives the concept of using a PC as the
user interface in classic microwave power measurement.
Teseq
teseq.com
Boonton
boonton.com
Noise Generator
The WGN outputs very accurate, high quality white
Gaussian noise. The output level can be set as Noise
Density or Noise Power in a selectable bandwidth. Factory
calibration over the entire frequency range yields 0.25 dB
absolute accuracy. The noise power can be varied with
54 High Frequency Electronics
0.015 dB resolution over a 60 dB range. A user-supplied
signal can be injected into the instrument to combine
with the noise.
dBm
dbmcorp.com
Product Highlights
Radial Combiner
Werlatone offers a full line of High Power, Radial
Combiners and Dividers. Designs range from 8-Way to
32-Way, from VHF through S-Band, up to 10:1 Bandwidth,
and power levels to 8 kW CW and 32 kW Peak! The
D6857, a 32-Way Combiner, covers the full 1200-1400
band, and is rated for 4000 W CW, and has a peak power
rating of 32 kW.
Werlatone
werlatone.com
Mixer
Linear Technology announces the LTC5510, a high
performance mixer with very wide frequency range,
extending to 6 GHz. It provides a continuous 50ohm
matched input from 30MHz to 6GHz, while delivering
outstanding linearity and gain flatness. These features
enable applications to work over a wider frequency span
without needing to rematch the input for different frequency bands, thereby reducing cost and simplifying
design.
Linear Technology
linear.com
Ceramic Filters
Integrated Microwave is a leader in the design and
manufacture of custom ceramic filters and diplexers. Low
cost, custom filters are available in prototypes to production quantities with high performance, low loss designs. A
full range of technologies is available for a wide variety of
commercial and military applications.
Integrated Microwave
imcsd.com
55
Product Highlights
Waveform Generator
B&K Precision announced the launch of its 4050
Series, a line of four dual channel function/arbitrary
waveform generators. These new instruments can generate waveforms up to 50 MHz for use in education and
applications requiring stable and precise sine, square,
triangle, and pulse waveforms, with modulation and arbitrary waveform capabilities.
B&K Precision
bkprecision.com
RF/Microwave Components
Fairview Microwave is your supplier if you need a
coaxial adapter, sma adapter, tnc adapter, fme adapter,
bias t, type n coupler, sma coupler, g3po adapter,1.85mm
adapter, type n power divider, rf limiter, microwave limiter, bias tee, type n attenuator, sma attenuator, tnc
attenuator, coaxial attenuator, rf attenuator, sma power
divider, power combiner, sma directional coupler, type n
directional coupler, sma dc block, type n dc block, bnc 75
ohm devices—and much more.
Fairview Microwave
fairviewmicrowave.com
VNA Cable
Koaxis, Inc. announced availability of new 40 GHz
Coaxial Cable Assemblies for Test and Measurement and
Vector Network Analyzer applications. Available in
armored and unarmored versions, Koaxis Test and
Measurement Assemblies are design to hold their shape
in your test setup. Performance is outstanding from DC -
56 High Frequency Electronics
40 GHz with 2.92 mm Straight Plug (m), 2.92 mm
Straight Jack (f), and 2.92 mm NMD Plug (f) connectors
available.
Koaxis
koaxis.com
Product Highlights
EM Software
Remcom announced a new version of Wireless InSite,
electromagnetic propagation software for the analysis of
wireless communication systems. This release provides
new capabilities related to statistical modeling of parameter uncertainty, calculation of maximum permissible
exposure to EM radiation based on IEEE Standard C95.12005, and a new outdoor-to-indoor propagation model for
conditions where indoor floor plans are not well known.
Phase Detectors
Holzworth phase detectors are characterized for low
phase noise with a proprietary IF termination for optimal
conversion efficiency. These components are targeted for
use in phase noise measurement systems and ultra-low
phase noise phase lock loop designs.
Holzworth Instrumentation
holzworth.com
Remcom
remcom.com
Amplifier
Empower model BBM5K8CKT is a 2500 to 6000 MHz
amplifier guaranteed to deliver 100W output power and
related RF performance under all specified temperature
and environmental conditions. The amplifier module is
8.0” x 6.5” x 1.0”. It is suitable for broadband jamming and
high power linear applications in the S / C bands. This
module utilizes high power GaN on SiC transistors and
also features built in control and monitoring, with protection functions.
Empower RF Systems
empowerrf.com
57
Product Highlights
App Note
Agilent released the application note, “Techniques for
Precise Power Measurements in the Field Using FieldFox
handheld analyzers.” The app note discusses techniques
for measuring average and peak power and references the
associated equipment options for field testing. It focuses
on the two most widely employed RF/microwave instruments, namely the power sensor and the spectrum analyzer.
Couplers
Two new high performance Directional Couplers from
AtlanTecRF cover the entire frequency range from 375
MHz to 18 GHz with at least 3 GHz of overlap. Available
in a choice of either 10, 20, or 30dB the 50 Watt couplers
with SMA connectors and built-in terminations will operate over a temperature range of -55 to +55C, making them
suitable for use in applications from airborne ECM to the
benign test bench.
Agilent Technologies
agilent.com
AtlanTecRF
atlantecrf.com
Attenuator
Renaissance has developed a new solid state programmable attenuator that can be used to perform fading simulations. The device operates from DC – 3 GHz
with 5.5 dB insertion loss and can attenuate 100 dB in 1
58 High Frequency Electronics
dB steps. The attenuator can handle 20 dBm over -40 to
+85 C.
Renaissance Electronics
rec-usa.com
Product Highlights
App Note
This note highlights the use of AWR’s Microwave
Office circuit design software to develop a Q- to E-band
doubler and a K- to E-band quadrupler circuit (including
a medium E-band power amplifier) for millimeter-wave
wireless systems. The design effort resulted in an increase
in gain as well as output power, two critical criteria for
E-band systems. Download the app note at www.awrcorp.
com/sites/default/files/AN-ETSI-2013.7.11.pdf
Amplifier
The MAAP-010169 is fabricated using a high reliability pHEMT process to realize higher power added efficiency and gain. The amplifier provides a nominal Gain of
18 dB with outstanding input and output return loss of
8-10 dB respectively across the 2 GHz to 6 GHz band –
altogether providing an excellent option for customers
looking for high power solutions for their broadband
applications.
AWR Corp.
awrcorp.com
M/A-COM Technology Solutions
macomtech.com
Selection Guide
With over 700 standard RF products, TriQuint’s 2013-2014 Product Selection Guide is now available. This guide
highlights 130 new products showcased in our New Products section. Download your copy today.
TriQuint Semiconductor
triquint.com
59
Product Highlights
Transformers
These compact, low-profile transformers are only 2.9
mm high and measure 4.8 mm square. They have a 1:1
turns ratio and an excellent coupling coefficient (K ≥
0.97). Offered with inductance values from 4.7 uH to 220
uH and current ratings to 1.9 Amps, they can also be used
as coupled shielded power inductors in SEPIC converters
or as common mode chokes.
Power Dividers
Pasternack introduced a new line of ultra-broadband
power dividers capable of 50 GHz. These millimeter wave
power dividers (also referred to as RF power splitters) are
ideal for use in radar systems, electronic warfare equipment, fiber optic systems, 10G Ethernet and any application that requires high frequency, multi-octave performance.
Coilcraft
coilcraft.com
Pasternack
pasternack.com
YIG Oscillators
Micro Lambda MLPM and MLPW Series Permanent
Magnet YIG Oscillators are available with integrated
serial driver circuits. These drivers eliminate the need for
customers to design or develop their own driver circuits
and sophisticated test and alignment procedures.
Integrating a driver at Micro Lambda’s factory ensures
60 High Frequency Electronics
peak performance. Alignment and compensation with the
particular YIG oscillator can be maximized down to the
component level.
Micro Lambda Wireless
microlambdawireless.com
Product Highlights
Probe Station
J microTechnology’s JR-2745 is an affordable manual
probe station for testing high speed, microwave and RF
semiconductors with wafer sizes up to 200mm (8”).
Magnetic mount or ‘bolt on’ microwave positioners. 4.5”
probe card adapter available. South position insert plate
available for NSEW probe location.
J microTechnology
jmicrotechnology.com
Frequency Counter
All Phase Matrix EIP® brand frequency counters are
based on a unique heterodyne architecture that incorporates a YIG-based preselector. The YIG-preselected input
provides unparalleled performance, in amplitude discrimination, frequency selectivity, kickback noise, and
burnout protection. - See more at: http://www.phasematrix.net/phasematrix/products/frequencycounters/545b548b-full-rack-frequency-counters#545b548b.
Phase Matrix
phasematrix.com
Signal Analyzers
Agilent Technologies announced greater core performance in two of its X-Series signal analyzers, the midrange MXA and general-purpose EXA. The respective
improvements in phase noise allow engineers to more
precisely characterize the frequency stability of oscillators and synthesizers. The faster sweep speeds of these
analyzers accelerate searches for spurious signals in the
testing of transmitters, active antenna arrays and power
amplifiers.
Agilent Technologies
agilent.com
61
d
n
a
b
e
s
d
r
i
W sforme
n
a
Tr
Y
TIN
NC
0.08" x 0.0 5 "
TC
0.15"x 0.15"
0.15-8000 MHz
99 ¢
as low as
Rugged, repeatable performance.
At Mini-Circuits, we’re passionate about transformers. We even
make own transmission line wire under tight manufacturing
control, and utilize all-welded connections to maximize
performance, reliability, and repeatability. And for signals up
to 8 GHz, our rugged LTCC ceramic models feature wraparound terminations for your visual solder inspection, and
they are even offered in packages as small as 0805!
Continued innovation: Top Hat.
A Mini-Circuits exclusive, this new feature is now available on
every open-core transformer we sell. Top Hat speeds
customer pick-and-place throughput in four distinct ways:
(1) faster set-up times, (2) fewer missed components,
each ( qty. 1000)
RoHS compliant.
(3) better placement accuracy and consistency,
and (4) high-visibility markings for quicker visual
identification and inspection.
More models, to meet more needs
Mini-Circuits has over 250 different SMT models in
stock. So for RF or microwave baluns and transformers,
with or without center taps or DC isolation, you can
probably find what you need at minicircuits.com. Enter
your requirements, and Yoni2, our patented search
engine, can identify a match in seconds. And new custom
designs are just a phone call away, with surprisingly
quick turnaround times gained from over 40 years of
manufacturing and design experience!
See minicircuits.com for technical specifications, performance data, pricing, and real-time, in-stock availability!
Mini-Circuits...we’re redefining what Value is all about!
®
ISO 9001
®
ISO 14001 AS 9100
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
The Design Engineers Search Engine finds the model you need, Instantly • For detailed performance specs & shopping online see
U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS
377 rev Z
RF
RF+DC
DC
BIAS-TEES
Now up to 4 A DC current 100 kHz-12 GHz
Mini-Circuits is your complete source for Bias-Tees, covering
from 100 kHz to 12 GHz and handling up to 4 A DC in a variety of
coaxial, plug-in, and surface mount packages. All of our Bias-Tees
boast low insertion loss and VSWR. Our patented TCBT LTCC
ceramic designs are the smallest in the world and are ready for
your projects where very low price, space limitation, and temperature
stability are a must. Our ultra-wideband ZX85 Bias-Tees use our
patented Unibody construction to give you small size and high
repeatability. Whether your applications call for biasing amplifiers,
laser diodes, or active antennas, DC blocking, DC return, satellite
communications, test, or if you have custom requirements, just
contact Mini-Circuits and let us fit your needs to a “TEE”!
Mini-Circuits…we’re redefining what VALUE is all about!
LTCC TECHNOLOGY
ZX85+
ZNBT+
ZFBT-FT+ ZFBT+ JEBT+ TCBT-14+ TCBT+
3
$ 95 *
from
OCK
IN ST
ea. Qty.1000
TYPICAL SPECIFICATIONS
Model
Freq
(MHz)
TCBT-2R5G+
TCBT-6G+
TCBT-14+
20-2500
50-6000
10-10,000
Insertion Isolation Max Current Price $ ea.
Loss (dB )
(dB )
mA
Qty.10
0.35
0.7
0.35
44
28
33
200
200
200
TCBT: LTCC, Actual Size .15” x .15”, U.S. Patent 7,012,486.
JEBT-4R2G+
10-4200
JEBT-4R2GW+ 0.1-4200
PBTC-1G+
10-1000
PBTC-3G+
10-3000
PBTC-1GW+
0.1-1000
PBTC-3GW+
0.1-3000
ZFBT-4R2G+
10-4200
ZFBT-6G+
10-6000
ZFBT-4R2GW+ 0.1-4200
ZFBT-6GW+
0.1-6000
ZFBT-4R2G-FT+ 10-4200
ZFBT-6G-FT+
10-6000
ZFBT-4R2GW-FT+ 0.1-4200
ZFBT-6GW-FT+ 0.1-6000
ZFBT-282-1.5A+ 10-2800
ZFBT-352-FT+ 30-3500
ZNBT-60-1W+ 2.5-6000
ZX85-12G+
0.2-12000
ZX85: U.S. Patent 6,790,049.
0.6
0.6
0.3
0.3
0.3
0.3
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.4
0.6
0.6
40
40
33
30
33
30
40
40
40
40
N/A
N/A
N/A
N/A
45
23
45
N/A
500
500
500
500
500
500
500
500
500
500
500
500
500
500
1500
4000
500
400
6.95*
9.95
8.45
Qty.1-9
39.95
59.95
25.95
35.95
35.95
46.95
59.95
79.95
79.95
89.95
59.95
79.95
79.95
89.95
56.95
48.95
82.95
99.95
Note: Isolation dB applies to DC to ( RF ) and DC to ( RF+DC ) ports.
RoHS
compliant.
S
o
COMPLIANT
®
ISO 9001
®
ISO 14001 AS 9100
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
The Design Engineers Search Engine finds the model you need, Instantly • For detailed performance specs & shopping online see
U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS
395 rev N
Advertiser Index
CompanyPage
Advanced Switch Technology.....................................47
Avtech.............................................................................47
Cernex.............................................................................18
Coilcraft...........................................................................11
C.W. Swift & Associates.................................................C2
C.W. Swift/SRI Connector Gage...................................31
Dudley Lab.....................................................................47
Emerson Network Power...............................................13
Herotek............................................................................14
JFW Industries.................................................................C4
LadyBug Technologies..................................................35
MDL..................................................................................15
MECA Electronics...........................................................19
Micro Lambda Wireless...................................................9
Microwave Components..............................................25
Mini-Circuits................................................................... 2, 3
Mini-Circuits.....................................................................17
Mini-Circuits.....................................................................23
Mini-Circuits.....................................................................29
Mini-Circuits.....................................................................41
Mini-Circuits............................................................... 62, 63
Miteq.................................................................................7
Molex .............................................................................C3
National Instruments........................................................5
Planar Monolithic Industries..........................................27
Pulsar Microwave...........................................................20
RelComm Technologies................................................21
RF Bay..............................................................................46
SAGE Millimeter..............................................................26
Satellink...........................................................................47
Sector Microwave..........................................................47
SGMC Microwave..........................................................39
Skyworks Solutions............................................................1
Wenteq Microwave Corp..............................................46
Wilmanco........................................................................47
The ad index is provided as an additional service by the publisher,
who assumes no responsibility for errors or omissions.
n Find Our Advertisers’ Web Sites using HFeLink™
1. G
o to our company information Web site:
www.HFeLink.com, or
2. F rom www.highfrequencyelectronics.com, click on the HFeLink
reminder on the home page
3. C
ompanies in our current issue are listed, or you can choose one
of our recent issues
4. F ind the company you want ... and just click!
5. Or ... view our Online Edition and simply click on any ad!
Publisher
Scott Spencer
Tel: 603-472-8261
Fax: 603-471-0716
scott@highfrequencyelectronics.com
Advertising Sales — East
Gary Rhodes
Vice President, Sales
Tel: 631-274-9530
Fax: 631-667-2871
grhodes@highfrequencyelectronics.com
Advertising Sales — west
Tim Burkhard
Associate Publisher
Tel: 707-544-9977
Fax: 707-544-9375
tim@highfrequencyelectronics.com
ADVERTISING SALES—WEST—NEW ACCOUNTS
Jeff Victor
Tel: 224-436-8044
Fax: 509-472-1888
jeff@highfrequencyelectronics.com
Advertising Sales — central
Keith Neighbour
Tel: 773-275-4020
Fax: 773-275-3438
keith@highfrequencyelectronics.com
Product Showcase
Joanne Frangides
Tel: 201-666-6698
Fax: 201-666-6698
joanne@highfrequencyelectronics.com
U.K and Europe
Sam Baird
Tel: +44 1883 715 697
Fax: +44 1883 715 697
sam@highfrequencyelectronics.com
U.K and Europe
Zena Coupé
Tel: +44 1923 852 537
Fax: +44 1923 852 261
zena@highfrequencyelectronics.com
High Frequency Electronics (USPS 024-316) is published monthly by Summit Technical Media, LLC, 3 Hawk Dr., Bedford, NH 03110.
Vol. 12 No. 8 August 2013. Periodicals Postage Paid at Manchester, NH and at additional mailing offices.
POSTMASTER: Send address corrections to High Frequency Electronics, PO Box 10621, Bedford, NH 03110-0621.
Subscriptions are free to qualified technical and management personnel involved in the design, manufacture and distribution of electronic equipment and systems at high frequencies. Copyright © 2013 Summit Technical Media, LLC
64 High Frequency Electronics
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RF Solutions
from
JFW Industries
Test Systems
Programmable Attenuators
Variable Attenuators
Fixed Attenuators
Terminations
RF Switches
Power Dividers
RF Test Accessories
JFW Industries
Call 317-887-1340
Toll Free 877-887-4JFW (4539)
E-mail sales@jfwindustries.com
Visit www.jfwindustries.com
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