BY228
VISHAY
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
\
Features
• Glass passivated junction
• Hermetically sealed package
Applications
High voltage rectification
Efficiency diode in horizontal deflection circuits
Mechanical Data
Case: Sintered glass case, SOD 64
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
949588
Weight: 860 mg, (max. 1000 mg)
Parts Table
Part
Type differentiation
BY228
Package
VR = 1500 V; IFAV = 3 A
SOD64
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
VR
1500
V
IR = 100 µA
VRRM
1650
V
tp = 10 ms, half sinewave
IFSM
50
A
IFAV
3
A
Reverse voltage
see electrical characteristics
Repetitive peak reverse voltage
Peak forward surge current
Sub type
Average forward current
Junction temperature
Storage temperature range
Non repetitive reverse avalanche energy
I(BR)R = 0.4 A
Tj
140
°C
Tstg
- 55 to +
175
°C
ER
10
mJ
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Document Number 86003
Rev. 5, 07-Jan-03
Test condition
on PC board with spacing 25 mm
Sub type
Symbol
Value
Unit
RthJA
70
K/W
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1
BY228
VISHAY
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Sub type
Symbol
Forward voltage
IF = 5 A
VF
Reverse current
VR = 1500 V
IR
Min
Typ.
Max
2
Unit
1.5
V
5
µA
VR = 1500 V, Tj = 140 °C
IR
140
µA
Total Reverse recovery time
IF = 1 A, - diF/dt = 0.05 A/µs
trr
20
µs
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0,25 A
trr
2
µs
R thJA – Therm. Resist. Junction / Ambient ( K/W )
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
40
I FAV – Average Forward Current ( A )
3.5
30
20
l
l
10
TL=constant
0
0
5
10
15
20
25
2.5
2.0
1.5
1.0
RthJA=70K/W
PCB: d=25mm
0.5
0.0
30
l – Lead Length ( mm )
94 9081
VR=VRRM
half sinewave
RthJA=25K/W
l=10mm
3.0
0
Figure 1. Typ. Thermal Resistance vs. Lead Length
25
50
75
100
125
150
Tamb – Ambient Temperature ( °C )
16408
Figure 3. Max. Average Forward Current vs. Ambient Temperature
1000
100.000
VR = VRRM
IR – Reverse Current ( mA )
I F – Forward Current ( A)
10.000
Tj=150°C
1.000
Tj=25°C
0.100
0.010
0.001
10
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VF – Forward Voltage ( V )
16407
Figure 2. Forward Current vs. Forward Voltage
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2
100
25
16409
50
75
100
125
150
Tj – Junction Temperature ( °C )
Figure 4. Reverse Current vs. Junction Temperature
Document Number 86003
Rev. 5, 07-Jan-03
BY228
VISHAY
Vishay Semiconductors
PR – Reverse Power Dissipation ( mW )
350
70
VR = VRRM
CD – Diode Capacitance ( pF )
300
250
PR–Limit
@100%VR
200
150
PR–Limit
@80%VR
100
50
0
50
40
30
20
10
0
25
16410
f=1MHz
60
50
75
100
125
Tj – Junction Temperature ( °C )
150
0.1
16411
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
1.0
10.0
VR – Reverse Voltage ( V )
100.0
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm
Sintered Glass Case
SOD 64
Weight max. 1.0g
Cathode Identification
∅ 4.3 max.
technical drawings
according to DIN
specifications
∅ 1.35 max.
26 min.
Document Number 86003
Rev. 5, 07-Jan-03
4.2 max.
26 min.
94 9587
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3
BY228
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 86003
Rev. 5, 07-Jan-03