Ultra-Fast Avalanche Sinterglass Diode BYV28-50, BYV28

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BYV28-50, BYV28-100, BYV28-150, BYV28-200
Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode
FEATURES
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
949588
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
APPLICATIONS
Case: SOD-64
• Very fast rectification e.g. for switch mode power supply
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
BYV28-50
VR = 50 V; IFAV = 3.5 A
SOD-64
BYV28-100
VR = 100 V; IFAV = 3.5 A
SOD-64
BYV28-150
VR = 150 V; IFAV = 3.5 A
SOD-64
BYV28-200
VR = 200 V; IFAV = 3.5 A
SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Peak reverse voltage, non repetitive
Reverse voltage = repetitive peak
reverse voltage
Peak forward surge current
See electrical characteristics
See electrical characteristics
tp = 10 ms, half sine wave
PART
SYMBOL
VALUE
UNIT
BYV28-50
VRSM
55
V
BYV28-100
VRSM
110
V
BYV28-150
VRSM
165
V
BYV28-200
VRSM
220
V
BYV28-50
VR = VRRM
50
V
BYV28-100
VR = VRRM
100
V
BYV28-150
VR = VRRM
150
V
BYV28-200
VR = VRRM
200
V
A
IFSM
90
Repetitive peak forward current
IFRM
25
A
Average forward current
IFAV
3.5
A
ER
20
mJ
Tj = Tstg
- 55 to + 175
°C
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
Junction and storage temperature
range
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72
I(BR)R = 1 A, Tj = 175 °C
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86044
Rev. 1.7, 25-Aug-10
BYV28-50, BYV28-100, BYV28-150, BYV28-200
Ultra-Fast Avalanche Sinterglass
Diode
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
RthJA
25
K/W
On PC board with spacing 25 mm
RthJA
70
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 5 A
VF
-
-
1.1
V
IF = 5 A, Tj = 175 °C
VF
-
-
0.89
V
VR = VRRM
IR
-
-
1
μA
Reverse current
Reverse recovery time
PART
VRSM
IR
-
-
100
μA
VR = VRRM, Tj = 165 °C
IR
-
-
150
μA
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
30
ns
40
4.0
IFAV - Average Forward Current (A)
RthJA - Ther. Resist. Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
30
20
l
l
10
TL = constant
VR = VRRM
half sine wave
RthJA ≤ 25 K/W
l = 10 mm
3.5
3.0
2.5
2.0
1.5
RthJA ≤ 70 K/W
PCB: d = 25 mm
1.0
0.5
0.0
0
0
5
10
15
20
25
Fig. 1 - Max. Thermal Resistance vs. Lead Length
20
40
60
80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
16454
l - Lead Length (mm)
949548
0
30
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
100
1000
IR - Reverse Current (A)
IF - Forward Current (A)
VR = VRRM
10
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
0.001
0.0
16453
100
10
1
0.4
0.8
1.2
1.6
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Document Number: 86044
Rev. 1.7, 25-Aug-10
25
2.0
16455
50
75
100
125
150
175
Tj - Junction Temperature (°C)
Fig. 4 - Reverse Current vs. Junction Temperature
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
73
BYV28-50, BYV28-100, BYV28-150, BYV28-200
Ultra-Fast Avalanche Sinterglass
Diode
60
250
f = 1 MHz
VR = VRRM
CD - Diode Capacitance (pF)
PR - Reverse Power Dissipation (mW)
Vishay Semiconductors
50
40
PR - Limit
at 100 % VR
30
20
PR - Limit
at 80 % VR
10
200
150
100
50
0
0
25
16456
50
75
100
125
150
175
0.1
Tj - Junction Temperature (°C)
16457
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
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74
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86044
Rev. 1.7, 25-Aug-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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