PAD/JPAD/SSTPAD Series
Vishay Siliconix
Low-Leakage Pico-Amp Diodes
PAD1
JPAD5
SSTPAD5
PAD5
JPAD50
SSTPAD100
PAD50
PRODUCT SUMMARY
Part Number
IR Max (pA)
PAD1
–1
PAD5/JPAD5/SSTPAD5
–5
PAD50/JPAD50
–50
SSTPAD100
–100
FEATURES
BENEFITS
APPLICATIONS
D Ultralow Leakage: PAD1 <1 pA
D Ultralow Capacitance: PAD1
<0.8 pF
D Two-Leaded Package
D Negligible Circuit Leakage Contribution
D Circuit “Transparent” Except to Shunt
High-Frequency Spikes
D Simplicity of Operation
D Op Amp Input Protection
D Multiplexer Overvoltage Protection
DESCRIPTION
The PAD/JPAD/SSTPAD series of extremely low-leakage
diodes provides a superior alternative to conventional diode
technology when reverse current (leakage) must be
minimized. They feature leakage currents ranging from –1 pA
(PAD1) to –100 pA (SSTPAD100) to support a wide range of
applications. These devices are well suited for use in
applications such as input protection for operational
amplifiers.
TO-206AA (TO-18)
Modified
TO-206AF (TO-72)
Modified
C
The hermetically sealed TO-206AF (TO-72) package allows
full military processing per MIL-S-19500 (see Military
Information). The TO-226A (TO-92) plastic package provides
a low-cost option. The TO-236 (SOT-23) package provides
surface-mount capability. Both J and SST series are available
in tape-and-reel for automated assembly. (See Packaging
Information.)
Case
TO-226AA (TO-92)
Modified
C
C
3
1
TO-236
(SOT-23)
1
C
1
1
3
C
2
2
A
A
A and Case
2
2
Top View
Top View
Top View
Top View
PAD1
PAD5
PAD50
JPAD5
JPAD50
Document Number: 70339
S-04029—Rev. H, 04-Jun-01
A
SSTPAD5 (05)*
SSTPAD100 (01)
*Marking Code for TO-236
www.vishay.com
4-1
PAD/JPAD/SSTPAD Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGSa
Forward Current:
(PAD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
(JPAD/SSTPAD ) . . . . . . . . . . . . . . . . . . . 10 mA
Total Device Dissipation:
(PAD)b . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
(JPAD/SSTPAD)b . . . . . . . . . . . . . . . . 350 mW
Operation Junction Temp:
(PAD) . . . . . . . . . . . . . . . . . . . . . . . –55 to 175_C
(JPAD/SSTPAD )c . . . . . . . . . . . . –55 to 150_C
Notes:
a. TA = 25_C unless otherwise noted.
b. Derate 2 mW/_C above 25_C.
c. Derate 2.8 mW/_C above 25_C.
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
SPECIFICATIONS SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Typa
Max
PAD1
–0.3
–1
PAD5/JPAD5/SSTPAD5
–1
–5
PAD50/JPAD50
–5
–50
SSTPAD100
–10
–100
Test Conditions
Min
Unit
Static
Reverse Current
IR
Reverse Breakdown Voltage
VR = –20 V
IR = –1 mA
BVR
Forward Voltage Drop
pA
VF
PAD1/PAD5
–45
–60
SSTPAD5/100
–30
–55
All Others
–35
–55
V
IF = 1 mA
0.8
1.5
PAD1/PAD5
0.5
0.8
All Others
1.5
2
Dynamic
Reverse Capacitance
CR
VR = –5V, f = 1 MHz
pF
Notes:
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Reverse Current vs. Reverse Voltage
–1000
–100
Reverse Current vs. Temperature
PAD/JPAD/SSTPAD5
VR = –20 V
I R @ 125_C
–100
–10
IR (pA)
IR (pA)
PAD1
–10
All Others
–1
PAD1/5
PAD/JPAD/SSTPAD5
–1
–0.1
IR @ 25_C
PAD1
–0.1
–0.01
0
–6
–12
–18
VR (V)
www.vishay.com
4-2
–24
–30
–55
–35
–15
5
25
45
65
85
105 125
TA – Temperature (_C)
Document Number: 70339
S-04029—Rev. H, 04-Jun-01