1N4148WS www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diodes • AEC-Q101 qualified • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified MARKING (example only) XY • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 22610 Bar = cathode marking XY = type code MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART 1N4148WS ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS Single diode A2 Tape and reel 1N4148WS-E3-08 or 1N4148WS-E3-18 1N4148WS-HE3-08 or 1N4148WS-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE VR 75 VRRM 100 f 50 Hz IF(AV) 150 t < 1 s and Tj = 25 °C IFSM 350 Ptot 200 mW SYMBOL VALUE UNIT RthJA 650 K/W Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 150 °C Reverse voltage Repetitive peak reverse voltage Average rectified current half wave rectification with resistive load (1) Surge forward current Power dissipation (1) UNIT V mA Note (1) Valid provided that electrodes are kept at ambient temperature. THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Junction temperature Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 2.0, 14-May-13 Document Number: 85751 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148WS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MAX. UNIT IF = 10 mA VF 1 V IF = 100 mA VF 1.2 V VR = 20 V IR 25 nA Forward voltage VR = 75 V IR 5 IR 100 VR = 20 V, Tj = 150 °C IR 50 Diode capacitance Reverse recovery time TYP. VR = 100 V Leakage current Voltage rise when switching ON MIN. μA VF = VR = 0 V CD 4 pF Tested with 50 mA pulses, tp = 0.1 μs, rise time < 30 ns, fp = (5 to 100) kHz Vfr 2.5 V IF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 trr 4 ns TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 250 Ptot - Power Dissipation (mW) 103 102 Tj = 100 °C Tj = 25 °C IF (mA) 10 1 10-1 200 150 100 50 10-2 0 1 0 Fig. 1 - Forward Characteristics 50 100 150 200 Tamb - Ambient Temperature (°C) 20324 VF (V) 17437 0 2 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 104 Tj = 25 °C 5 2 10 f = 1 MHz 3 1.0 CD (VR) 2 102 5 CD (0 V) 5 Rf (Ω) Tj = 25 °C 1.1 f = 1 kHz 2 0.9 0.8 10 5 0.7 2 10-2 10-1 17438 1 10 102 IF (mA) Fig. 2 - Dynamic Forward Resistance vs. Forward Current Rev. 2.0, 14-May-13 0 17440 2 4 6 8 10 VR (V) Fig. 4 - Relative Capacitance vs. Reverse Voltage Document Number: 85751 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148WS www.vishay.com Vishay Semiconductors 104 5 2 103 IR (nA) 5 2 102 5 2 10 5 VR = 20 V 2 1 100 0 17441 200 Tj (°C) Fig. 5 - Leakage Current vs. Junction Temperature 100 5 4 3 2 I IFRM (A) 1 T = 1/fP IFRM 10 5 4 3 2 n = tP/T tP n=0 t T 0.1 0.2 0.5 5 4 3 2 0.1 10-5 17442 2 5 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10 tP (s) Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev. 2.0, 14-May-13 Document Number: 85751 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148WS www.vishay.com Vishay Semiconductors 0.1 (0.004) max. 0° to 8 ° 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 1.15 (0.045) PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) 2.50 (0.098) 1.1 (0.043) 2.85 (0.112) 1.5 (0.059) 0.40 (0.016) 0.20 (0.008) Cathode bar Foot print recommendation: Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 Rev. 2.0, 14-May-13 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) Document Number: 85751 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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