PHOTODIODE
Si PIN photodiode
S3590-08/-09
Large area sensors for scintillation detection
Features
Applications
l Higher sensitivity and low dark current than conventional type
l Sensitivity matching with BGO and CsI (TI) scintillators
l High quantum efficiency: QE=85 % (λ=540 nm)
l Low capacitance
l High-speed response
l High stability
l Good energy resolution
l Scintillation detectors
l Calorimeters
l Hodoscopes
l TOF counters
l Air shower counters
l Particle detectors, etc.
■ General ratings / Absolute maximum ratings
Type No.
S3590-08
S3590-09
Window
material
Epoxy resin
Window-less
Active area
Depletion
layer
thickness
(mm)
(mm)
10 × 10
0.3
Reverse
voltage
VR Max.
100
Absolute maximum ratings
Power
Operating
dissipation
temperature
P
Topr
(mW)
(°C)
100
-20 to +60
Storage
temperature
Tstg
(°C)
-20 to +80
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
S3590-08
S3590-09
Spectral
Peak
response sensitivity
range wavelength
λ=λp
λ
λp
(nm)
320 to
1100
(nm)
960
(A/W)
0.66
0.66
Dark
Terminal
Temp.
current
Short
coefficient Cut-off capacitance
ID
circuit
NEP
Ct
of ID Frequency
current VR=70 V
TCID
f= 1MHz VR=70 V
fc
Isc
LSO BGO CsI(Tl) 100 lx Typ. Max. VR=70 V VR=70 V VR=70 V
420 nm 480 nm 540 nm
1/2
(pF) (W/Hz )
(A/W) (A/W) (A/W) (µA) (nA) (nA) (times/°C) (MHz)
0.20
0.30
0.36
100
-14
2
6
1.12
40
40
3.8 × 10
0.22
0.33
0.41
90
Photo sensitivity
S
1
Si PIN photodiode
■ Spectral response
S3590-08
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
0.7
PHOTO SENSITIVITY (A/W)
0.6
0.5
0.4
0.3
0.2
0.1
0.5
QE=100 %
0.4
0.3
0.2
0.1
0
200
400
600
800
1000
0
200
1200
400
WAVELENGTH (nm)
600
800
1000
800
1000
KPINB0093ED
(Typ. Ta=25 ˚C, f=1 MHz)
10 nF
1 nA
TERMINAL CAPACITANCE
DARK CURRENT
DARK CURRENT
600
WAVELENGTH (nm)
(Typ. VR=70 V)
1 µA
10 nA
10 nA
1 nA
100 pA
10 pA
100
400
KPINB0263EB
100 nA
10
0
■ Dark current vs. ambient temperature ■ Terminal capacitance vs.
reverse voltage
(Typ. Ta=25 ˚C)
1
+0.5
WAVELENGTH (nm)
■ Dark current vs. reverse voltage
100 pA
0.1
+1.0
-0.5
200
1200
KPINB0231EB
100 nA
(Typ.)
+1.5
TEMPERATURE COEFFICIENT (%/˚C)
0.6
PHOTO SENSITIVITY (A/W)
■ Photo sensitivity temperature
characteristic
S3590-09
0.7
S3590-08/-09
1000
0
20
40
60
80
AMBIENT TEMPERATURE (˚C)
REVERSE VOLTAGE (V)
KPINB0232EC
1 nF
100 pF
10 pF
0.1
1
10
100
1000
REVERSE VOLTAGE (V)
KPINB0233ED
KPINB0234EC
■ Dimensional outline (unit: mm)
+0
14.5 -0.5
PHOTOSENSITIVE
SURFACE
WHITE CERAMIC
0.45
LEAD
+0
10
0.7
ACTIVE AREA
1.78 ± 0.2
10.0
10.0
12.7 - 0.5
1.4
1.25
5.0 ± 0.2
The coating resin may extend a
maximum of 0.1 mm beyond the
upper surface of the package.
KPINA0014EF
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
2
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KPIN1052E07
Mar. 2010 DN