July 2012
FDS6680A
Single N-Channel, Logic Level, PowerTrench® MOSFET
General Description
Features
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
• 12.5 A, 30 V
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
• High performance trench technology for extremely
RDS(ON) = 9.5 mΩ @ VGS = 10 V
RDS(ON) = 13 mΩ @ VGS = 4.5 V
• Ultra-low gate charge
low RDS(ON)
• High power and current handling capability
D
D
DD
DD
DD
G
SS G
S
SS S
SO-8
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
VDSS
Gate-Source Voltage
Drain Current
– Continuous
Power Dissipation for Single Operation
7
2
8
1
Ratings
Units
30
V
12.5
A
50
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, TSTG
3
±20
(Note 1a)
– Pulsed
PD
6
o
Parameter
ID
4
TA=25 C unless otherwise noted
Drain-Source Voltage
VGSS
5
Operating and Storage Junction Temperature Range
W
1.0
–55 to +150
°C
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Case
(Note 1a)
50
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6680A
FDS6680A
13’’
12mm
2500 units
©2012 Fairchild Semiconductor Corporation
FDS6680A Rev F2(W)
FDS6680A
November 2004
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V,
Zero Gate Voltage Drain Current
VDS = 24 V,
ID = 250 µA
30
ID = 250 µA, Referenced to 25°C
V
25
VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ=55°C
IGSS
VGS = ±20 V,
Gate–Body Leakage
On Characteristics
VDS = 0 V
mV/°C
1
µA
10
µA
±100
nA
(Note 2)
ID = 250 µA
VDS = VGS,
ID = 250 µA, Referenced to 25°C
1
2
–4.9
3
7.8
9.9
11.0
9.5
13
15
V
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 15 V,
ID = 12.5 A
64
S
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1620
pF
380
pF
160
pF
Ω
VGS = 10 V,
ID = 12.5 A
ID = 10.5 A
VGS = 4.5 V,
VGS = 10 V, ID = 12.5 A, TJ=125°C
mV/°C
25
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
VGS = 15 mV,
f = 1.0 MHz
1.3
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
10
19
ns
ns
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
5
10
td(off)
Turn–Off Delay Time
27
43
ns
tf
Turn–Off Fall Time
15
27
ns
16
23
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 15 V,
VGS = 5 V
ID = 12.5 A,
nC
5
nC
5.8
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
trr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
(Note 2)
VGS = 0 V, IS = 2.1 A
Voltage
Diode Reverse Recovery Time
IF = 12.5 A, diF/dt = 100 A/µs
Qrr
Diode Reverse Recovery Charge
VSD
0.73
2.1
A
1.2
V
28
ns
18
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
2
mounted on a 1in
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6680A Rev F2(W)
FDS6680A
Electrical Characteristics
FDS6680A
Typical Characteristics
50
2.2
VGS = 10V
6.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
40
4.0V
4.5V
3.5V
30
20
10
3.0V
0
0.5
1
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.6
1.4
4.0V
4.5V
1.2
5.0V
6.0V
10V
1
2
0
Figure 1. On-Region Characteristics.
10
20
30
ID, DRAIN CURRENT (A)
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.03
ID = 12.5A
VGS = 10V
ID = 6.2A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.5V
1.8
0.8
0
1.4
1.2
1
0.8
0.025
0.02
TA = 125oC
0.015
0.01
TA = 25oC
0.005
0.6
-50
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (oC)
125
2
150
Figure 3. On-Resist ance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
2
40
30
TA = 125oC
o
-55 C
20
10
25oC
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6680A Rev F2(W)
FDS6680A
Typical Characteristics
2400
f = 1 MHz
VGS = 0 V
ID = 12.5A
8
VDS = 10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
15V
6
20V
4
1800
Ciss
1200
Coss
600
2
Crss
0
0
0
5
10
15
20
25
30
0
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
50
RDS(ON) LIMIT
P(pk), PEAK TRANSIENT POWER (W)
100µs
ID, DRAIN CURRENT (A)
30
Figure 8. Capacitance Characteristics.
100
1ms
10ms
10
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
0.1
TA = 25oC
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
RθJA = 125oC/W
40
TA = 25oC
30
20
10
0
0.001
100
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
0.1
o
RθJA = 125 C/W
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6680A Rev F2(W)
FDS6680A
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®*
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FDS6680A Rev.F2
www.fairchildsemi.com