RGP10A-RGP10M
RGP10A - RGP10M
Features
•
1.0 ampere operation at TA = 55°C
with no thermal runaway.
•
High temperature metallurgically
bonded construction.
•
Glass passivated cavity-free junction.
•
Typical IR less than 1µA.
•
Fast switching for high efficiency.
DO-41
COLOR BAND DENOTES CATHODE
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
10A
10B
10D
10G
10J
10K
10M
50
100
200
400
600
800
1000
VRRM
Maximum Repetitive Reverse Voltage
IF(AV)
Average Rectified Forward Current,
.375 " lead length @ TL = 55°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
-65 to +175
°C
Operating Junction Temperature
-65 to +175
°C
IFSM
Tstg
TJ
V
1.0
A
30
A
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
3.0
W
RθJA
Thermal Resistance, Junction to Ambient
50
°C/W
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Device
10A
VF
Forward Voltage @ 1.0 A
trr
Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Reverse Current @ rated VR TA = 25°C
TA = 150°C
Total Capacitance
VR = 4.0 V, f = 1.0 MHz
IR
CT
2001 Fairchild Semiconductor Corporation
10B
10D
10G
10J
Units
10K
10M
1.3
150
V
250
500
ns
5.0
200
µA
µA
15
pF
RPG10A - RPG10M, Rev. C
RGP10A-RGP10M
1
0.75
0.5 SINGLE PHASE
0.25
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
0
25
50
75
100
125
Lead Temperature [ºC]
150
175
Peak Forward Surge Current, IFSM [A]
Average Rectified Forward Current, IF [A]
Typical Characteristics
Figure 1. Forward Current Derating Curve
25
20
15
10
5
0
1
2
5
10
20
Number of Cycles at 60Hz
50
100
Figure 2. Non-Repetitive Surge Current
10
10
TA = 125 º C
Reverse Current, IR [mA]
Forward Current, IF [A]
30
1
0.1
TA = 25º C
µs
Pulse Width = 300µ
2% Duty Cycle
0.01
0.4
0.6
0.8
1
1.2
Forward Voltage, VF [V]
1.4
1.6
Figure 3. Forward Voltage Characteristics
1
TA = 75 º C
0.1
TA = 25º C
0.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
Total Capacitance, C T [pF]
100
50
20
10
5
2
1
1
2
5
10
20
Reverse Voltage, V R [V]
50
100
Figure 5. Total Capacitance
50Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
+0.5A
trr
(-)
DUT
50V
(approx)
50Ω
NONINDUCTIVE
Pulse
Generator
(Note 2)
0
-0.25A
(+)
OSCILLOSCOPE
(Note 1)
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001 Fairchild Semiconductor Corporation
RPG10A - RPG10M, Rev. C
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not intended to be an exhaustive list of all such trademarks.
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E2CMOSTM
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FAST 
FASTr™
FRFET™
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LittleFET™
MicroFET™
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POP™
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PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
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STAR*POWER™
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SuperSOT™-3
SuperSOT™-6
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As used herein:
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with instructions for use provided in the labeling, can be
effectiveness.
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user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4