FDCY36C120
http://www.fujielectric.com/products/semiconductor/
FUJI Diode
SiC Schottky Barrier Diode
Features
Outline Drawings [mm]
Connection diagram
• Ultra Low IR
• Low VF
• Tj MAX = 175˚C
• High reliability at higher temperatures
Applications
• High frequency operation
• DC-DC converters
• AC adapter
Sn-Cu (Pb＜1000ppm)
Maximum Ratings and Characteristics
Maximum ratings (at Ta=25˚C Unless otherwise specified)
Item
Repetitive peak reverse voltage
Continuous forward current
Non-repetitive forward surge current**
Symbols
Conditions
Ratings
Units
1200
V
VRRM
IF
D=1, Tc<117°C
36*
A
I FSM
Sine wave, 10ms 1shot
90
A
Operating junction temperature
Tj
175
˚C
Storage temperature
Tstg
-55 to +150
˚C
*Out put current of center tap full wave connection.
**Rating per leg
Electrical characteristics (at Ta=25˚C Unless otherwise specified)
Item
Symbols
Conditions
Min.
Max.
Units
VF
IF = 18A
1.10
1.80
V
Reverse current**
IR
VR =VRRM
-
10
µA
Total Capacitive Charge**
QC
51
nC
Switching time**
TC
VR=160V, IF=18A,
di/dt=100A/μs, Tj=25°C
42
50
55
ns
C
VR=0V, Tj=25°C, f=1MHz
VR=400V, Tj=25°C, f=1MHz
VR=1200V, Tj=25°C, f=1MHz
1330
100
75
1490
115
85
pF
Rth(j-c)
Junction to case
-
0.7
˚C/W
Forward voltage**
Total Capacitance**
Thermal resistance***
** Rating per leg
*** Rating both legs
Mechanical characteristics
Item
Mounting torque
Approximate mass
1
Conditions
Ratings
Units
Recommended torque
0.4 to 0.6
N•m
2.0
g
4276
OCTOBER 2015
FDCY36C120
FUJI Diode
http://www.fujielectric.com/products/semiconductor/
Forward Characteristic
(typ.)
Reverse Characteristic
30
10
(typ.)
1
(Per leg)
(Per leg)
（μＡ）
Tj=25℃
20
Tj=100℃
Tj=175℃
100
Tj=150℃
Reverse Current
Tj=125℃
Tj=150℃
Tj=175℃
15
ＩR
ＩＦ Forward Current （Ａ）
25
10
10-1
Tj=125℃
Tj=100℃
5
Tj=25℃
10-2
0
0
1
ＶＦ
2
3
600
800
Reverse Voltage
1000
1200
（Ｖ）
Reverse Power Dissipation (max.)
(Ip-Tc) (max.)
0.010
80
(Per leg)
VR
tp
（Ｗ）
D=0.1
Reverse Power Dissipation
D=tp/T
(A)
60
(Per leg)
360°
T
Ip
D=0.3
40
D=0.5
D=0.7
D=1
20
ＰＲ
Peak Output Current
400
ＶR
Forward Voltage （Ｖ）
Current Derating
Ip
200
4
0.008
α
DC
0.006
0.004
α=180°
0.002
0.000
0
25
50
75
Tc
100
Case Temperature
125
（℃）
150
0
175
2
200
400
ＶＲ
600
800
Reverse Voltage
1000
（Ｖ）
1200
1400
FDCY36C120
FUJI Diode
http://www.fujielectric.com/products/semiconductor/
Surge Capability (max.)
Total Capacitance Characteristic (typ.)
1000
(Per leg)
（Ａ）
(Per leg)
100
ＩFSM
C
Total Capacitance (pF)
Peak Half - Wave Current
1000
100
10
1
10
VR
100
10
1000
10 0
Number of Cycles at 50Hz
Reverse Voltage (V)
Transient Thermal Impedance (max.)
1
10
(°C/W)
(Both legs)
Transient Thermal Impedance
1
Rth(j-c):0.7°C/W
0
10
-1
10
-2
10
-3
10
-2
10
-1
0
10
10
t
3
Time
(sec)
1
10
2
10
FDCY36C120
FUJI Diode
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2015.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
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