V23990-P705-F-PM
datasheet
flow 90PACK 1
600 V / 50 A
Features
flow 90 1 housing
● IGBT3 (600 V) technology for low saturation losses
● Supports designs with 90° mounting angle
● Clip-in PCB mounting
Schematic
Target applications
● Industrial
Types
● V23990-P705-F-PM
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
600
V
51
A
150
A
95
W
±20
V
Inverter Switch
Collector-emitter voltage
Collector current
VCES
IC
Tj = Tjmax
Ts = 80 °C
Repetitive peak collector current
ICRM
tp limited by Tjmax
Total power dissipation
Ptot
Tj = Tjmax
Gate-emitter voltage
VGES
Short circuit ratings
Maximum junction temperature
Copyright Vincotech
tSC
Tj ≤ 150 °C
VCC
VGE = 15 V
Ts = 80 °C
Tjmax
1
6
µs
360
V
175
°C
04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
600
V
45
A
100
A
64
W
Inverter Diode
Peak repetitive reverse voltage
Continuous (direct) forward current
VRRM
IF
Tj = Tjmax
Ts = 80 °C
Repetitive peak forward current
IFRM
Total power dissipation
Ptot
Maximum junction temperature
Tjmax
175
°C
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Tjop
-40…(Tjmax - 25)
°C
4000
V
min. 12,7
mm
11,84
mm
Tj = Tjmax
Ts = 80 °C
Module Properties
Thermal Properties
Isolation Properties
Isolation voltage
Visol
DC Test Voltage
Creepage distance
Clearance
Comparative Tracking Index
Copyright Vincotech
CTI
tp = 2 s
> 200
2
04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
VCE [V]
VGE [V]
VDS [V]
VGS [V]
VF [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Typ
Unit
Max
Inverter Switch
Static
Gate-emitter threshold voltage
Collector-emitter saturation voltage
VGE(th)
VGE = VCE
15
VCEsat
0,0008
25
50
25
125
5
5,8
6,5
1,05
1,48
1,68
1,85
V
V
Collector-emitter cut-off current
ICES
0
600
25
2,6
µA
Gate-emitter leakage current
IGES
20
0
25
600
nA
Internal gate resistance
rg
none
Input capacitance
Cies
3140
Output capacitance
Coes
Reverse transfer capacitance
Cres
f = 1 MHz
0
25
25
200
Ω
pF
93
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
1,00
K/W
Dynamic
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
Turn-on energy (per pulse)
Eon
Turn-off energy (per pulse)
Eoff
300
49
3
19
177
125
196
25
25
QrFWD = 2,1 µC
17
25
125
QrFWD = 3,7 µC
Copyright Vincotech
111
125
±15
Fall time
109
125
25
Rgoff = 8 Ω
Rgon = 8 Ω
Turn-off delay time
25
ns
77
96
0,356
125
0,523
25
1,392
125
1,707
mWs
04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
VCE [V]
VGE [V]
VDS [V]
VGS [V]
VF [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Unit
Typ
Max
1,57
1,52
1,9
Inverter Diode
Static
Forward voltage
VF
Reverse leakage current
IR
50
600
25
125
25
27
V
µA
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
1,48
K/W
Dynamic
Peak recovery current
IRRM
Reverse recovery time
trr
Recovered charge
Qr
Reverse recovered energy
Erec
Peak rate of fall of recovery current
di/dt = 3978 A/µs
±15
di/dt = 3132 A/µs
(dirf/dt)max
300
49
25
125
25
125
25
125
25
125
25
125
62
74
52
151
2,094
3,688
0,516
0,909
2882
2764
A
ns
µC
mWs
A/µs
Thermistor
Rated resistance
R
Deviation of R100
ΔR/R
Power dissipation
25
R100 = 1486 Ω
100
P
Power dissipation constant
21,5
-4,5
kΩ
+4,5
%
25
210
mW
25
3,5
mW/K
B-value
B(25/50)
25
3884
K
B-value
B(25/100)
25
3964
K
Vincotech NTC Reference
Copyright Vincotech
F
4
04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical out put charact eristics
I C = f(V CE)
I C = f(V CE)
150
I C (A)
I C (A)
150
VGE :
7V
8V
9V
120
120
10 V
11 V
12 V
13 V
14 V
15 V
90
90
16 V
17 V
60
60
30
30
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V C E (V)
V C E (V)
tp =
250
µs
V GE =
15
V
T j:
25
°C
tp =
250
125 °C
Tj =
125
V GE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
µs
°C
figure 4.
IGBT
Typical transf er charact erist ics
Transient t hermal impedance as f unction of pulse duration
I C = f(V GE)
Z th(j-s) = f(t p)
50
Z t h(j
h(j--s)(K/W)
I C (A)
100
40
10-1
30
20
0.5
10-2
0.2
0.1
0.05
10
0.02
0.01
0.005
0
10-3
10-5
0
0
2
4
6
8
10
12
10-4
10-3
10-2
V G E (V)
tp =
100
µs
V CE =
10
V
T j:
25
°C
D =
125 °C
10-1
100
101
t p (s)
102
tp / T
R th(j-s) =
1,00
K/W
IGBT thermal model values
Copyright Vincotech
5
R (K/W)
1,16E-01
τ (s)
5,24E-01
3,52E-01
9,02E-02
2,27E-01
3,52E-02
7,48E-02
8,27E-03
3,46E-02
1,57E-03
04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical f orward charact erist ics
Transient t hermal impedance as a f unct ion of pulse widt h
I F = f(V F)
Z th(j-s) = f(t p)
150
Z t h(j
h(j--s) (K/W)
IF (A)
101
120
100
90
60
0.5
10-1
0.2
0.1
0.05
30
0.02
0.01
0.005
0
10-2
0
0
1
2
3
4
10-5
5
10-4
10-3
VF (V)
tp =
250
µs
T j:
25
10-2
10-1
100
101
t p (s)
°C
125 °C
D =
tp / T
R th(j-s) =
1,48
K/W
FWD thermal model values
R (K/W)
8,47E-02
τ (s)
2,94E+00
2,58E-01
3,69E-01
6,24E-01
8,73E-02
3,27E-01
1,50E-02
9,31E-02
2,52E-03
9,86E-02
2,80E-04
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
6
04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(I C)
E = f(R g)
2,5
3
E ( mWs)
E (mWs)
Typical swit ching energy losses as a f unction of collector current
Eoff
2,5
Eon
2
Eoff
Eo n
E o ff
2
Eo ff
1,5
1,5
1
1
Eon
E on
0,5
0,5
0
0
0
25
50
75
100
0
I C (A)
25
With an induc tive load at
300
V
V CE =
V GE =
±15
T j:
°C
4
125 °C
V
V GE =
IC =
R gon =
8
Ω
R goff =
8
Ω
8
12
16
figure 3.
FWD
±15
V
49
A
20
T j:
32
R g ( Ω)
E rec = f(I c)
E rec = f(R g)
E (mWs)
E ( mWs)
1,6
Erec
36
125 °C
FWD
Typical reverse recovered energy loss as a f unct ion of gat e resist or
0,8
28
°C
figure 4.
Typical reverse recovered energy loss as a f unction of collector current
1,2
24
25
With an inductive load at
300
V
V CE =
1,6
1,2
0,8
Erec
Erec
0,4
0,4
Erec
0
0
0
25
50
With an induc tive load at
300
V
V CE =
±15
V
V GE =
R gon =
8
Copyright Vincotech
75
25
T j:
I C (A)
0
100
°C
4
8
12
With an inductive load at
300
V
V CE =
±15
V
V GE =
125 °C
Ω
IC=
7
49
16
20
24
25
T j:
28
32
r g (Ω)
36
°C
125 °C
A
04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collector current
Typical swit ching t imes as a f unct ion of gate resistor
t = f(I C)
t = f(R g)
1
t ( μs)
t ( μ s)
1
td(on)
td(off )
td(on)
0,1
td(off )
0,1
tf
tf
tr
tr
0,01
0,01
0,001
0,001
0
25
50
75
100
0
I C (A)
(A)
With an induc tive load at
125
°C
Tj=
300
V
V CE =
4
8
12
16
20
24
28
32
r g (Ω)
36
With an inductive load at
125
°C
Tj=
300
V
V CE =
V GE =
±15
V
V GE =
R gon =
8
Ω
IC =
R goff =
8
Ω
figure 7.
FWD
±15
V
49
A
figure 8.
FWD
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,2
0,3
t rr (μs)
t rr (μs)
Typical reverse recovery t ime as a f unction of collector current
trr
0,25
trr
0,15
0,2
0,1
0,15
0,1
trr
0,05
trr
0,05
0
0
0
25
50
75
100
0
I C (A)
At
300
V
V GE =
±15
V
R gon =
8
Ω
V CE=
Copyright Vincotech
25
T j:
4
8
12
16
20
24
28
32
36
R g on (Ω)
°C
At
125 °C
V CE =
V GE =
IC=
8
300
V
±15
V
49
A
25
T j:
°C
125 °C
04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Q r = f(I C)
Q r = f(R gon)
6
5
Q r (µC)
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r (μ C)
Typical recovered charge as a f unction of collector current
Qr
5
4
4
Qr
3
3
Qr
2
Qr
2
1
1
0
At
0
0
25
50
75
100
0
4
8
12
16
20
24
28
32
I C (A)
300
V
V GE =
±15
V
R gon =
8
Ω
At
V CE =
25
T j:
°C
At
VCE=
125 °C
V GE =
I C=
figure 11.
FWD
300
V
±15
V
49
A
25
T j:
°C
125 °C
figure 12.
FWD
Typical peak reverse recovery current current as a f unct ion of collect or current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(I C)
I RM = f(R gon)
100
36
R g o n (Ω)
I R M (A)
I R M (A)
120
IR M
80
90
IRM
60
60
40
IRM
I RM
30
20
0
0
0
At
25
50
300
V
V GE =
±15
V
R gon =
8
Ω
V CE =
Copyright Vincotech
75
25
T j:
I C (A)
0
100
4
8
12
16
20
24
28
32
36
R g o n (Ω)
°C
At
125 °C
V CE =
V GE =
IC=
9
300
V
±15
V
49
A
25
T j:
°C
125 °C
04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
d i /d t (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
6000
di F / dt
di r r /dt
5000
7000
diF / dt
di r r/ dt
6000
5000
4000
4000
3000
3000
2000
2000
1000
1000
0
0
0
25
50
75
0
100
4
8
12
16
20
24
28
I C (A)
300
V
V GE =
±15
V
R gon =
8
Ω
At
V CE =
25
T j:
°C
At
125 °C
V CE =
V GE =
I C=
figure 15.
300
V
±15
V
49
A
25
T j:
32
36
R g o n (Ω)
°C
125 °C
IGBT
Reverse bias saf e operating area
I C = f(V CE)
I C (A)
120
I C MAX
I c CHIP
100
MODULE
80
Ic
60
40
V CE MAX
20
0
0
100
200
300
400
500
600
700
V C E (V)
At
175
°C
R gon =
8
Ω
R goff =
8
Ω
Tj =
Copyright Vincotech
10
04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Inverter Switching Definitions
General conditions
=
125 °C
=
8Ω
Tj
R gon
=
R goff
figure 1.
IGBT
8Ω
figure 2.
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
IGBT
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
300
150
%
%
IC
tdoff
VCE
100
200
VGE 90%
VCE 90%
VGE
IC
50
VCE
100
tEoff
VGE
tdon
IC 1%
0
VCE 3%
IC 10%
VGE 10%
0
tEon
-50
-0,1
0
0,1
0,2
0,3
0,4
0,5
-100
2,71
0,6
2,78
2,85
2,92
2,99
t (µs)
V GE (0%) =
-15
V
V GE (0%) =
-15
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
300
V
V C (100%) =
300
V
I C (100%) =
50
A
I C (100%) =
50
A
t doff =
t Eoff =
0,196
0,468
µs
µs
t don =
t Eon =
0,111
0,243
µs
µs
figure 3.
3,06
t (µs)
IGBT
figure 4.
Turn-of f Swit ching Wavef orms & def init ion of t f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tr
300
125
fitted
%
VCE
IC
%
250
100
IC
IC 90%
200
75
IC 60%
150
50
VCE
IC 40%
100
50
IC10%
0
-25
0,04
IC 90%
tr
25
tf
0,1
0,16
IC 10%
0
0,22
0,28
0,34
0,4
-50
2,84
0,46
t ( µs)
2,86
2,88
2,9
2,94
t (µs)
V C (100%) =
300
V
V C (100%) =
300
I C (100%) =
50
A
I C (100%) =
50
A
tf=
0,096
µs
tr =
0,019
µs
Copyright Vincotech
2,92
11
V
04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Inverter Switching Definitions
figure 5.
IGBT
figure 6.
Turn-of f Swit ching Wavef orms & def init ion of t Eof f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tEon
125
125
%
Eoff
Poff
100
%
IC 1%
Eon
100
75
75
50
50
25
Pon
25
VGE 90%
VCE 3%
VGE 10%
0
0
tEoff
-25
-0,1
0
0,1
tEon
0,2
0,3
0,4
-25
2,72
0,5
2,79
2,86
P off (100%) =
14,88
kW
P on (100%) =
14,88
kW
E off (100%) =
1,71
mJ
E on (100%) =
0,52
mJ
t Eoff =
0,47
µs
t Eon =
0,24
µs
figure 7.
2,93
3
t ( µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def init ion of t rr
150
%
100
IF
trr
50
fitted
VF
0
IRRM 10%
-50
-100
IRRM 90%
IRRM 100%
-150
-200
2,84
2,87
2,9
2,93
2,96
2,99
3,02
3,05
t (µs)
V F (100%) =
300
V
I F (100%) =
50
A
I RRM (100%) =
74
A
t rr =
0,151
µs
Copyright Vincotech
12
04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Inverter Switching Definitions
figure 8.
FWD
figure 9.
Turn-on Swit ching Wavef orms & def init ion of t Qr (t Qr = int egrat ing t ime f or Qr)
FWD
Turn-on Swit ching Wavef orms & def init ion of t Erec (t Erec = int egrating t ime f or Erec )
150
150
%
%
IF
Qr
tQr
50
Prec
125
100
Erec
100
tErec
75
0
50
-50
25
-100
0
-150
2,83
2,91
2,99
3,07
3,15
-25
2,83
3,23
t (µs)
2,91
2,99
3,07
3,23
t (µs)
I F (100%) =
50
A
P rec (100%) =
14,88
kW
Q r (100%) =
3,69
µC
E rec (100%) =
0,91
mJ
t Qr =
0,30
µs
t Erec =
0,30
µs
Copyright Vincotech
3,15
13
04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Ordering Code & Marking
Version
Ordering Code
V23990-P705-F-PM
V23990-P705-F-/3/-PM
without thermal paste with solder pins
with thermal paste with solder pins
VIN WWYY
NNNNNNNVV UL
LLLLL SSSS
Text
Datamatrix
VIN
Date code
Name&Ver
UL
Lot
Serial
VIN
WWYY
NNNNNNNVV
UL
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Function
1
53
0
U+
2
50
0
U+
3
43
0
G6
4
40
0
S6
5
37
0
U-
6
34,1
0
U-
7
31
0
U-
8
28,1
0
U-
9
24,05
0
S5
10
21,05
0
G5
11
17
0
G4
12
12,95
0
S4
13
8,9
0
U-
14
6
0
U-
15
3
0
N2
16
0
0
N1
17
0
7
G1
18
3
7
S1
19
7,2
7
U
20
10,2
7
U
21
17,2
7
G2
22
20,2
7
S2
23
29,75
7
V
24
32,75
7
V
25
39,75
7
G3
26
42,75
7
S3
27
28
47
50
7
7
W
W
Copyright Vincotech
14
04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Pinout
Identification
ID
Component
T1-T6
D1-D6
NTC
Thermistor
Copyright Vincotech
Voltage
Current
Function
IGBT
600 V
50 A
Inverter Switch
FWD
600 V
50 A
Inverter Diode
Comment
Thermistor
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04 Jul. 2016 / Revision 2
V23990-P705-F-PM
datasheet
Packaging instruction
Standard packaging quantity (SPQ) 80
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 90 1 packages see vincotech.com website.
Package data
Package data for flow 90 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
V23990-P705-F-D2-14
04 Jul. 2016
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
04 Jul. 2016 / Revision 2