< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current I C .............….......................…
100A
Collector-emitter voltage V CES ......................… 1 2 0 0 V
Maximum junction temperature T j m a x ..............
1 7 5 °C
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
sevenpack (3φ Inverter+Chopper Brake)
●Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
t=0.8
SECTION A
INTERNAL CONNECTION
Tolerance otherwise specified
Division of Dimension
GUP(34 )
GVP(26)
GWP(1 8)
EUP(3 3)
EVP(25 )
EWP(17)
U(1)
N(36)
NTC
P(35)
V(2)
W(3)
W(4)
GUN(30 )
GVP(2 2)
GWN(14)
GB(6 )
EUN(2 9)
EVP(21)
EWN(13 )
EB(5)
Publication Date : August 2013
1
TH2(11)
3
Tolerance
0.5
to
over
3
to
6
±0.3
over
6
to
30
±0.5
TH1(1 0)
±0.2
over 30
to 120
±0.8
over 120
to 400
±1.2
The tolerance of size between
terminals is assumed to be ±0.4.
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (T j =25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Rating
Unit
V CES
Symbol
Collector-emitter voltage
G-E short-circuited
1200
V
V GES
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
Item
DC, T C =119 °C
Collector current
I CRM
P tot
IE
I ERM
(Note1)
(Note2, 4)
100
(Note3)
200
Pulse, Repetitive
Total power dissipation
(Note1)
Conditions
T C =25 °C
(Note2, 4)
750
(Note2)
Emitter current
A
W
100
(Note3)
Pulse, Repetitive
A
200
BRAKE PART IGBT/DIODE
Symbol
Item
Conditions
Rating
Unit
V CES
Collector-emitter voltage
G-E short-circuited
1200
V
V GES
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
I CRM
(Note2, 4)
DC, T C =125 °C
Collector current
50
(Note3)
Pulse, Repetitive
(Note2, 4)
P tot
Total power dissipation
T C =25 °C
V RRM
Repetitive peak reverse voltage
G-E short-circuited
(Note2)
IF
I FRM
Forward current
A
100
425
W
1200
V
50
Pulse, Repetitive
(Note3)
A
100
MODULE
Symbol
Rating
Unit
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
2500
V
T jmax
Maximum junction temperature
Instantaneous event (overload)
175
°C
T Cmax
Maximum case temperature
(Note4)
125
°C
T jop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
T stg
Storage temperature
-
-40 ~ +125
V isol
Item
Conditions
°C
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
I CES
Collector-emitter cut-off current
V CE =V CES , G-E short-circuited
-
-
1.0
mA
I GES
Gate-emitter leakage current
V GE =V GES , C-E short-circuited
-
-
0.5
μA
V GE(th)
Gate-emitter threshold voltage
I C =10 mA, V CE =10 V
5.4
6.0
6.6
V
I C =100 A
V CEsat
Collector-emitter saturation voltage
C ies
Input capacitance
C oes
Output capacitance
C res
Reverse transfer capacitance
QG
Gate charge
t d(on)
Turn-on delay time
tr
Rise time
t d(off)
Turn-off delay time
tf
Fall time
(Note5)
T j =25 °C
-
1.80
2.25
V GE =15 V,
T j =125 °C
-
2.00
-
(Terminal)
T j =150 °C
-
2.05
-
I C =100 A
(Note5)
,
T j =25 °C
-
1.70
2.15
V GE =15 V,
,
T j =125 °C
-
1.90
-
(Chip)
T j =150 °C
-
1.95
-
-
-
10
V CE =10 V, G-E short-circuited
V CC =600 V, I C =100 A, V GE =15 V
V CC =600 V, I C =100 A, V GE =±15 V,
R G =6.2 Ω, Inductive load
Publication Date : August 2013
2
-
-
2.0
-
-
0.17
-
233
-
-
-
300
-
-
200
-
-
600
-
-
300
V
V
nF
nC
ns
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont; T j =25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
(Note5)
I E =100 A
(Note1)
V EC
(Note1)
t rr
Emitter-collector voltage
Limits
Conditions
Typ.
Max.
T j =25 °C
-
1.80
2.25
G-E short-circuited,
T j =125 °C
-
1.80
-
(Terminal)
T j =150 °C
-
1.80
-
(Note5)
I E =100 A
,
Min.
T j =25 °C
-
1.70
2.15
G-E short-circuited,
,
T j =125 °C
-
1.70
-
(Chip)
T j =150 °C
-
1.70
-
Unit
V
V
Reverse recovery time
V CC =600 V, I E =100 A, V GE =±15 V,
-
-
300
ns
Reverse recovery charge
R G =6.2 Ω, Inductive load
-
5.3
-
μC
E on
Turn-on switching energy per pulse
V CC =600 V, I C =I E =100 A,
-
8.6
-
E off
Turn-off switching energy per pulse
V GE =±15 V, R G =6.2 Ω, T j =150 °C,
-
10.7
-
Reverse recovery energy per pulse
Inductive load
-
10.2
-
mJ
-
-
3.5
mΩ
-
0
-
Ω
(Note1)
Q rr
(Note1)
E rr
R CC'+EE'
Internal lead resistance
rg
Internal gate resistance
Main terminals-chip, per switch,
(Note4)
T C =25 °C
Per switch
mJ
BRAKE PART IGBT/DIODE
Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
I CES
Collector-emitter cut-off current
V CE =V CES , G-E short-circuited
-
-
1.0
mA
I GES
Gate-emitter leakage current
V GE =V GES , C-E short-circuited
-
-
0.5
μA
V GE(th)
Gate-emitter threshold voltage
I C =5 mA, V CE =10 V
V
5.4
6.0
6.6
T j =25 °C
-
1.80
2.25
V GE =15 V,
T j =125 °C
-
2.00
-
(Terminal)
T j =150 °C
-
2.05
-
T j =25 °C
-
1.70
2.15
V GE =15 V,
T j =125 °C
-
1.90
-
(Chip)
T j =150 °C
-
1.95
-
-
-
5.0
I C =50 A
V CEsat
Collector-emitter saturation voltage
C ies
Input capacitance
C oes
Output capacitance
C res
Reverse transfer capacitance
QG
Gate charge
t d(on)
Turn-on delay time
tr
Rise time
t d(off)
Turn-off delay time
tf
Fall time
I RRM
Repetitive peak reverse current
I C =50 A
Forward voltage
(Note5)
,
,
V CE =10 V, G-E short-circuited
V CC =600 V, I C =50 A, V GE =15 V
V CC =600 V, I C =50 A, V GE =±15 V,
R G =13 Ω, Inductive load
V R =V RRM , G-E short-circuited
I E =50 A
VF
(Note5)
(Note5)
-
1.0
-
0.08
-
117
-
-
-
300
-
-
200
-
-
600
-
-
300
-
-
1.0
T j =25 °C
-
1.80
2.25
G-E short-circuited,
T j =125 °C
-
1.80
-
(Terminal)
T j =150 °C
-
1.80
-
I E =50 A
(Note5)
,
-
T j =25 °C
-
1.70
2.15
G-E short-circuited,
,
T j =125 °C
-
1.70
-
(Chip)
T j =150 °C
V
V
nF
nC
ns
mA
V
V
-
1.70
-
t rr
Reverse recovery time
V CC =600 V, I E =50 A, V GE =±15 V,
-
-
300
ns
Q rr
Reverse recovery charge
R G =13 Ω, Inductive load
-
2.7
-
μC
E on
Turn-on switching energy per pulse
V CC =600 V, I C =I E =50 A,
-
5.5
-
E off
Turn-off switching energy per pulse
V GE =±15 V, R G =13 Ω, T j =150 °C,
-
5.3
-
E rr
Reverse recovery energy per pulse
Inductive load
-
4.5
-
mJ
rg
Internal gate resistance
-
-
0
-
Ω
Publication Date : August 2013
3
mJ
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont; T j =25 °C, unless otherwise specified)
NTC THERMISTOR PART
Symbol
Item
(Note4)
R 25
Zero-power resistance
T C =25 °C
∆R/R
Deviation of resistance
R 100 =493 Ω, T C =100 °C
B (25/50)
B-constant
Approximate by equation
P 25
Limits
Conditions
Power dissipation
T C =25 °C
(Note4)
(Note7)
(Note4)
Max.
Unit
Min.
Typ.
4.85
5.00
5.15
kΩ
-7.3
-
+7.8
%
-
3375
-
K
-
-
10
mW
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Item
R th(j-c)Q
R th(j-c)D
Thermal resistance
R th(j-c)Q
(Note4)
R th(j-c)D
R th(c-s)
Contact thermal resistance
Limits
Conditions
(Note4)
Min.
Typ.
Max.
Junction to case, per Inverter IGBT
-
-
0.20
Junction to case, per Inverter DIODE
-
-
0.29
Junction to case, per Brake IGBT
-
-
0.35
Junction to case, per Brake DIODE
-
-
0.63
-
15
-
Case to heat sink, per 1 module,
Thermal grease applied
(Note7)
Unit
K/W
K/W
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
Mt
Mounting torque
Main terminals
M 5 screw
2.5
3.0
3.5
N·m
Ms
Mounting torque
Mounting to heat sink
M 5 screw
2.5
3.0
3.5
N·m
ds
Creepage distance
da
Clearance
m
mass
-
ec
Flatness of base plate
On the centerline X, Y
Terminal to terminal
10.25
-
-
Terminal to base plate
12.32
-
-
Terminal to terminal
10.28
-
-
Terminal to base plate
10.85
-
-
-
370
-
g
±0
-
+100
μm
(Note8)
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T j ) should not increase beyond T j m a x rating.
3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating.
4. Case temperature (T C ) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Refer to the figure of test circuit.
R
1
1
6. B ( 25 / 50)  ln( 25 ) /(

),
R 50 T25 T50
-:Concave
+:Convex
R 25 : resistance at absolute temperature T 25 [K]; T 25 =25 [°C]+273.15=298.15 [K]
R 50 : resistance at absolute temperature T 50 [K]; T 50 =50 [°C]+273.15=323.15 [K]
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
Y
X
mounting side
mounting side
mounting side
mm
-:Concave
+:Convex
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 self tapping screw"
The length of the screw depends on the thickness (t1.6~t2.0) of the PCB.
Publication Date : August 2013
4
mm
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
Limits
Conditions
V CC
(DC) Supply voltage
V GEon
Gate (-emitter drive) voltage
RG
External gate resistance
Applied across P-N terminals
Applied across GB-EB/
G*P-E*P/G*N-E*N (*=U, V, W) terminals
Inverter IGBT
Per switch
Brake IGBT
CHIP LOCATION (Top view)
Unit
Min.
Typ.
Max.
-
600
850
V
13.5
15.0
16.5
V
6.2
-
62
13
-
130
Ω
Dimension in mm, tolerance: ±1 mm
Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: DIODE (*=U/V/W), DiBr: BRAKE DIODE, Th: NTC thermistor
iE
vGE
P
*: U, V, W
～
～
TEST CIRCUIT AND WAVEFORMS
90 %
0V
0
iE
t
E* P
+
*
V CC
IE
iC
～
～
G*P
-VGE
+V GE
-V GE
0.5×I r r
G*N
iC
10%
0A
E* N
tr
N
td ( o n )
tf
td ( o ff )
t
Switching characteristics test circuit and waveforms
t r r , Q r r test waveform
iE
iC
iC
ICM
vCE
t
Irr
vCE
vGE
trr
0A
90 %
RG
0V
Q r r =0.5×I r r ×t r r
Load
VCC
IEM
vEC
ICM
VCC
vCE
VCC
t
0A
0.1×ICM
0.1×VCC
0
0.1×VCC
t
0.02×ICM
0
ti
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
t
0V
t
ti
DIODE Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : August 2013
5
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
35
35
VGE=15V
VGE=15V
IC
34
V
35
VGE=15V
IC
26
33
V
25
2
Shortcircuited
3
Shortcircuited
30
29
Shortcircuited
22
36
21
P
14
36
13
P
Shortcircuited
GUP
V
GWP
V
EVP
U
EVN
Gate-emitter GVP-EVP GVN-EVN,
short-circuited GWP-EWP, GWN-EWN,
GB-EB
VGE=15V
IC
GWN
N
EWN
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GWP-EWP, GWN-EWN,
GB-EB
UP / UN IGBT
B
VGE=15V
IC
GVN
N
V
W
VGE=15V
IC
GUN
V
EWP
V
VGE=15V
P
Shortcircuited
GVP
EUP
36
P
Shortcircuited
EUN
17
V
1
IC
18
N
EB
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GVP-EVP, GVN-EVN,
GB-EB
VP / VN IGBT
IC
GB
N
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GVP-EVP, GVN-EVN,
GWP-EWP, GWN-EWN
Brake IGBT
WP / WN IGBT
V CE s a t test circuit
35
35
Shortcircuited
IE
34
V
Shortcircuited
IE
V
18
25
2
30
21
P
13
P
Shortcircuited
V
V
W
Shortcircuited
GUN
Shortcircuited
IE
GVN
N
Gate-emitter GVP-EVP GVN-EVN,
short-circuited GWP-EWP, GWN-EWN,
GB-EB
UP / UN DIODE
EVN
V
EWP
V
IE
EUN
GWP
EVP
U
Shortcircuited
36
Shortcircuited
GVP
EUP
5
36
P
Shortcircuited
GUP
6
14
36
V
Shortcircuited
Shortcircuited
22
36
4
3
Shortcircuited
29
17
V
1
Shortcircuited
IF
IE
26
33
35
35
Shortcircuited
IE
GWN
N
EWN
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GWP-EWP, GWN-EWN,
GB-EB
N
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GVP-EVP, GVN-EVN,
GB-EB
VP / VN DIODE
WP / WN DIODE
V EC / V F test circuit
Publication Date : August 2013
6
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GVP-EVP, GVN-EVN,
GWP-EWP, GWN-EWN
Brake DIODE
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
T j =25 °C
V GE =15 V
(Chip)
V GE =20 V
13.5 V
COLLECTOR-EMITTER
SATURATION VOLTAGE V CEsat (V)
I C (A)
3
12 V
15 V
COLLECTOR CURRENT
(Chip)
3.5
200
150
11 V
100
10 V
50
9V
0
T j =150 °C
T j =125 °C
2.5
2
1.5
T j =25 °C
1
0.5
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
10
0
50
V CE (V)
150
COLLECTOR CURRENT
200
I C (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
T j =25 °C
100
G-E short-circuited
(Chip)
(Chip)
1000
10
I E (A)
8
I C =100 A
6
EMITTER CURRENT
COLLECTOR-EMITTER
SATURATION VOLTAGE V CEsat (V)
T j =125 °C
I C =200 A
I C =40 A
4
2
0
6
8
10
12
14
GATE-EMITTER VOLTAGE
16
18
100
T j =150 °C
T j =25 °C
10
1
20
0
V GE (V)
0.5
1
1.5
2
EMITTER-COLLECTOR VOLTAGE
Publication Date : August 2013
7
2.5
V EC (V)
3
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V CC =600 V, V GE =±15 V, R G =6.2 Ω, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
V CC =600 V, V GE =±15 V, I C =100 A, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
1000
1000
t d(off)
tf
100
SWITCHING TIME (ns)
SWITCHING TIME (ns)
tf
t d(on)
10
tr
t d(off)
100
t d(on)
tr
1
10
1
10
COLLECTOR CURRENT
100
1
I C (A)
EXTERNAL GATE RESISTANCE
100
R G (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V CC =600 V, V GE =±15 V, I C /I E =100 A,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: T j =125 °C
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V CC =600 V, V GE =±15 V, R G =6.2 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: T j =125 °C
100
100
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
10
10
E rr
E off
1
E on
0.1
E on
E off
10
E rr
1
1
10
100
1
10
EXTERNAL GATE RESISTANCE
COLLECTOR CURRENT I C (A)
EMITTER CURRENT I E (A)
Publication Date : August 2013
8
100
R G (Ω)
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
CAPACITANCE CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T j =25 °C
V CC =600 V, V GE =±15 V, R G =6.2 Ω, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
100
1000
CAPACITANCE (nF)
t r r (ns), I r r (A)
C ies
10
1
C oes
I rr
100
t rr
0.1
C res
10
0.01
0.1
1
10
1
100
COLLECTOR-EMITTER VOLTAGE
V CE (V)
EMITTER CURRENT
I E (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
V CC =600 V, I C =100 A, T j =25 °C
Single pulse, T C =25 °C
R t h ( j - c ) Q =0.20 K/W, R t h ( j - c ) D =0.29 K/W
1
NORMALIZED TRANSIENT THERMAL RESISTANCE
Z th(j-c)
V GE (V)
100
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
GATE-EMITTER VOLTAGE
10
15
10
5
0
0
100
200
GATE CHARGE
300
400
Q G (nC)
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
TIME (S)
Publication Date : August 2013
9
0.1
1
10
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
BRAKE PART
CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
V GE =15 V
G-E short-circuited
(Chip)
3.5
3
T j =125 °C
T j =150 °C
2
1.5
T j =150 °C
V F (V)
T j =125 °C
2.5
FORWARD VOLTAGE
COLLECTOR-EMITTER
SATURATION VOLTAGE V CEsat (V)
(Chip)
100
T j =25 °C
1
T j =25 °C
10
0.5
0
1
0
20
40
60
COLLECTOR CURRENT
80
100
0
0.5
I C (A)
1
1.5
FORWARD CURRENT
2
2.5
3
I F (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V CC =600 V, V GE =±15 V, R G =13 Ω, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
V CC =600 V, I C =50 A, V GE =±15 V, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
1000
1000
t d(off)
tf
100
SWITCHING TIME (ns)
SWITCHING TIME (ns)
tf
t d(on)
10
tr
t d(off)
100
t d(on)
tr
1
10
1
10
COLLECTOR CURRENT
100
10
I C (A)
100
EXTERNAL GATE RESISTANCE
Publication Date : August 2013
10
1000
R G (Ω)
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
BRAKE PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V CC =600 V, I C /I F =50 A, V GE =±15 V,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: T j =125 °C
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V CC =600 V, V GE =±15 V, R G =13 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: T j =125 °C
100
E rr
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
10
E off
1
E on
0.1
E on
10
E off
E rr
1
1
10
100
10
COLLECTOR CURRENT I C (A)
FORWARD CURRENT I F (A)
1000
EXTERNAL GATE RESISTANCE
R G (Ω)
CLAMP DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
V CC =600 V, V GE =±15 V, R G =13 Ω, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
Single pulse, T C =25 °C
R t h ( j - c ) Q =0.35 K/W, R t h ( j - c ) D =0.63 K/W
1000
1
100
NORMALIZED TRANSIENT THERMAL RESISTANCE
Z th(j-c)
t r r (ns), I r r (A)
100
t rr
I rr
10
1
10
FORWARD CURRENT
100
I F (A)
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
TIME (S)
Publication Date : August 2013
11
0.1
1
10
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
NTC thermistor part
TEMPERATURE CHARACTERISTICS
(TYPICAL)
RESISTANCE
R (kΩ)
100
10
1
0.1
-50
-25
0
25
50
TEMPERATURE
75
100
125
T (°C)
Publication Date : August 2013
12
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
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Publication Date : August 2013
13