FGPF4633
330 V PDP Trench IGBT
Features
General Description
• High Current Capability
Using novel trench IGBT technology, Fairchild's new series of
trench IGBTs offer the optimum performance for consumer
appliances, PDP TV and lighting applications where low conduction and switching losses are essential.
• Low Saturation Voltage: VCE(sat) = 1.55 V @ IC = 70 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
•
PDP TV, Consumer Appliances, Lighting
GC E
TO-220F
(Retractable)
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
330
V
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC pulse(1)*
Collector Current
@ TC = 25oC
Maximum Power Dissipation
@ TC = 25oC
30.5
W
Maximum Power Dissipation
@ TC = 100oC
12.2
W
PD
 30
V
300
A
TJ
Operating Junction Temperature
-55 to +150
o
C
Tstg
Storage Temperature Range
-55 to +150
o
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
Thermal Characteristics
Symbol
RJC(IGBT)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
-
4.1
o
C/W
62.5
o
C/W
-
Units
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5 sec
* Ic_pluse limited by max Tj
©2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. C1
1
www.fairchildsemi.com
FGPF4633 — 330 V PDP Trench IGBT
November 2013
Part Number
Top Mark
FGPF4633
FGPF4633
Package Packing Method
TO-220F
Parameter
Tape Width
Quantity
N/A
N/A
50
Tube
Electrical Characteristics of the IGBT
Symbol
Reel Size
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
330
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 A
-
0.3
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
100
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±400
nA
IC = 250 A, VCE = VGE
2.4
3.3
4.0
V
V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 20 A, VGE = 15 V
-
1.1
-
IC = 40 A, VGE = 15 V
-
1.35
-
IC = 70 A, VGE = 15 V,
TC = 25oC
-
1.55
1.8
V
IC = 70 A, VGE = 15 V,
TC = 125oC
-
1.61
-
V
-
1715
-
pF
VCE = 30 V, VGE = 0 V,
f = 1 MHz
-
75
-
pF
-
55
-
pF
-
8
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
td(on)
VCC = 200 V, IC = 20 A
RG = 5 , VGE = 15 V
Resistive Load, TC = 25oC
-
30
-
ns
-
52
-
ns
Fall Time
-
260
-
ns
Turn-On Delay Time
-
8
-
ns
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Qg
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCC = 200 V, IC = 20 A,
RG = 5 , VGE = 15 V,
Resistive Load, TC = 125oC
-
32
-
ns
-
53
-
ns
Fall Time
-
341
-
ns
Total Gate Charge
-
60
-
nC
-
8
-
nC
-
20
-
nC
©2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. C1
VCE = 200 V, IC = 20 A
VGE = 15 V
2
www.fairchildsemi.com
FGPF4633 — 330 V PDP Trench IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
300
300
o
o
15V
TC = 25 C
20V
200
10V
150
100
VGE = 8V
12V
200
10V
150
100
VGE = 8V
50
50
0
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
0
7
Figure 3. Typical Saturation Voltage
Characteristics
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
7
Figure 4. Transfer Characteristics
300
300
Common Emitter
VGE = 15V
250
TC = 25 C
o
TC = 125 C
200
Common Emitter
VCE = 20V
250
o
Collector Current, IC [A]
Collector Current, IC [A]
15V
250
Collector Current, IC [A]
Collector Current, IC [A]
250
150
100
o
TC = 25 C
o
TC = 125 C
200
150
100
50
50
0
0
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
2
6
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
70A
1.4
0.8
-55
40A
IC = 20A
-30
0
30
60
90
120
o
Case Temperature, TC [ C]
©2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. C1
14
Common Emitter
1.6
1.0
6
8
10
12
Gate-Emitter Voltage,VGE [V]
20
Common Emitter
VGE = 15V
1.2
4
Figure 6. Saturation Voltage vs. VGE
1.8
Collector-Emitter Voltage, VCE [V]
20V
TC = 125 C
12V
o
TC = 25 C
16
12
70A
8
4
0
150
3
40A
IC = 20A
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGPF4633 — 330 V PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
3000
20
Common Emitter
VGE = 0V, f = 1MHz
Common Emitter
Collector-Emitter Voltage, VCE [V]
o
TC = 125 C
o
16
Capacitance [pF]
TC = 25 C
12
70A
8
40A
2000
Cies
1000
Coes
4
IC = 20A
Cres
0
0.1
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 9. Gate charge Characteristics
1
10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
15
500
Common Emitter
VCC = 100V
9
200V
6
3
0
0
10s
100
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
TC = 25 C
12
15
30
45
Gate Charge, Qg [nC]
100s
1ms
10
10 ms
DC
1
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
0.01
0.1
60
Figure 11. Turn-on Characteristics vs.
Gate Resistance
1
10
100
Collector-Emitter Voltage, VCE [V]
500
Figure 12. Turn-off Characteristics vs.
Gate Resistance
70
Switching Time [ns]
Switching Time [ns]
500
tr
td(on)
10
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
td(off)
tf
100
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
o
TC = 25 C
o
TC = 25 C
o
TC = 125 C
o
6
0
10
20
30
40
50
0
Gate Resistance, RG [ ]
©2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. C1
TC = 125 C
40
10
20
30
40
50
Gate Resistance, RG [ ]
4
www.fairchildsemi.com
FGPF4633 — 330 V PDP Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
500
100
td(off)
10
Switching Time [ns]
Switching Time [ns]
tr
Common Emitter
VGE = 15V, RG = 5
td(on)
100
tf
Common Emitter
VGE = 15V, RG = 5
o
o
TC = 25 C
TC = 25 C
o
o
TC = 125 C
TC = 125 C
3
20
30
40
50
60
10
20
70
30
Figure 15. Switching Loss vs. Gate Resistance
50
60
70
Figure 16. Switching Loss vs. Collector Current
3
2
Common Emitter
VCC = 200V, VGE = 15V
1
IC = 20A
1
o
Switching Loss [mJ]
TC = 25 C
Switching Loss [mJ]
40
Collector Current, IC [A]
Collector Current, IC [A]
o
TC = 125 C
Eoff
0.1
Eoff
0.1
Eon
Common Emitter
VGE = 15V, RG = 5
o
TC = 25 C
o
Eon
0.03
0
10
20
30
TC = 125 C
40
0.01
20
50
Gate Resistance, RG [ ]
30
40
50
60
70
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics
500
Collector Current, IC [A]
100
10
1
Safe Operating Area
o
VGE = 15V, TC = 125 C
0.1
1
10
100
500
Collector-Emitter Voltage, VCE [V]
©2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. C1
5
www.fairchildsemi.com
FGPF4633 — 330 V PDP Trench IGBT
Typical Performance Characteristics
FGPF4633 — 330 V PDP Trench IGBT
Typical Performance Characteristics
Figure 18.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
5
0.5
1
0.2
0.1
0.05
PDM
0.1
0.02
t1
t2
0.01
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
0.01
0.006
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
©2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. C1
6
www.fairchildsemi.com
FGPF4633 — 330 V PDP Trench IGBT
Package Dimensions
Figure 19. TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
©2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. C1
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
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expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. C1
8
www.fairchildsemi.com
FGPF4633 — 330 V PDP Trench IGBT
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