FGPF4536
360 V PDP Trench IGBT
Features
General Description
• High Current Capability
Using novel trench IGBT technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for consumer
appliances, PDP TV and lighting applications where low conduction and switching losses are essential.
• Low Saturation Voltage: VCE (sat) =1.59 V @ IC = 50 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• PDP TV, Consumer appliances, Lighting
GC E
TO-220F
(Retractable)
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
360
V
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
 30
V
IC pulse(1)*
Pulsed Collector Current
@ TC = 25oC
220
A
Maximum Power Dissipation
@ TC = 25oC
28.4
W
Maximum Power Dissipation
@ TC = 100oC
11.4
W
PD
TJ
Operating Junction Temperature
-55 to +150
o
C
Tstg
Storage Temperature Range
-55 to +150
o
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
Thermal Characteristics
Symbol
RJC(IGBT)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
-
4.4
o
C/W
62.5
o
C/W
-
Unit
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 1 sec
* Ic_pluse limited by max Tj
©2010 Fairchild Semiconductor Corporation
FGPF4536 Rev. C1
1
www.fairchildsemi.com
FGPF4536 — 360 V PDP Trench IGBT
November 2013
Part Number
Top Mark
Package
Packing
Method
Reel Size
Tape Width
Quantity
FGPF4536
FGPF4536
TO-220F
Tube
N/A
N/A
50
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
360
-
-
V
-
0.4
-
V/oC
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250 A
BVCES /
TJ
Temperature Coefficient of Breakdown
Voltage
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
100
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±400
nA
IC = 250 A, VCE = VGE
VGE = 0V, IC = 250 A
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
2.4
3.3
4.0
V
IC = 20 A, VGE = 15 V
-
1.19
-
V
IC = 30 A, VGE = 15 V
-
1.33
-
V
IC = 50 A, VGE = 15 V,
TC = 25oC
-
1.59
1.8
V
IC = 50 A, VGE = 15 V,
TC = 125oC
-
1.66
-
V
-
1295
-
pF
VCE = 30 V, VGE = 0 V,
f = 1MHz
-
56
-
pF
-
43
-
pF
-
5
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
td(on)
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Qg
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCC = 200 V, IC = 20 A,
RG = 5 , VGE = 15 V,
Resistive Load, TC = 25oC
-
20
-
ns
-
41
-
ns
Fall Time
-
182
-
ns
Turn-On Delay Time
-
4.6
-
ns
VCC = 200 V, IC = 20 A,
RG = 5 , VGE = 15 V,
Resistive Load, TC = 125oC
-
21
-
ns
-
43
-
ns
Fall Time
-
249
-
ns
Total Gate Charge
-
47
-
nC
-
5.4
-
nC
-
15
-
nC
©2010 Fairchild Semiconductor Corporation
FGPF4536 Rev. C1
VCE = 200 V, IC = 20 A,
VGE = 15 V
2
www.fairchildsemi.com
FGPF4536 — 360 V PDP Trench IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
Collector Current, IC [A]
12V
15V
150
VGE = 8V
100
50
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
Collector Current, IC [A]
o
TC = 125 C
100
50
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
o
TC = 25 C
o
TC = 125 C
150
100
50
0
6
Figure 5. Saturation Voltage vs. VGE
0
2
4
6
8
10
Gate-Emitter Voltage,VGE [V]
20
Common Emitter
Common Emitter
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
12
Figure 6. Saturation Voltage vs. VGE
20
16
50A
12
30A
8
IC = 20A
4
0
6
Common Emitter
VCE = 10V
200
o
0
0
Figure 4. Transfer Characteristics
TC = 25 C
150
VGE = 8V
50
0
Common Emitter
VGE = 15V
200
12V
10V
100
6
Figure 3. Typical Saturation Voltage
Characteristics
15V
150
0
0
20V
o
TC = 125 C
200
10V
Collector Current, IC [A]
20V
o
TC = 25 C
200
Figure 2. Typical Output Characteristics
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
©2010 Fairchild Semiconductor Corporation
FGPF4536 Rev. C1
o
TC = 125 C
16
50A
12
30A
8
IC = 20A
4
0
20
0
3
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGPF4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 8. Capacitance Characteristics
2400
Common Emitter
VGE = 0V, f = 1MHz
50A
1.6
2000
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
1.7
1.5
1.4
30A
1.3
o
TC = 25 C
1600
Cies
1200
800
1.2
Coes
400
IC = 20A
1.1
1.0
20
Cres
Common Emitter
VGE = 15V
40
60
80
100
120
o
Case Temperature, TC [ C]
0
0.1
140
Figure 9. Gate charge Characteristics
500
10s
100
Collector Current, Ic [A]
12
200V
9
VCC = 100V
6
3
100s
1ms
10
10 ms
DC
1
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
Common Emitter
o
TC = 25 C
0
30
Figure 10. SOA Characteristics
15
Gate-Emitter Voltage, VGE [V]
1
10
Collector-Emitter Voltage, VCE [V]
0
10
20
30
Gate Charge, Qg [nC]
40
0.01
0.1
50
Figure 11. Turn-on Characteristics vs.
Gate Resistance
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
100
1000
Switching Time [ns]
Switching Time [ns]
tf
tr
10
td(on)
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
100
td(off)
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
o
TC = 25 C
o
TC = 25 C
o
TC = 125 C
1
0
10
20
30
o
TC = 125 C
40
10
50
Gate Resistance, RG [ ]
©2010 Fairchild Semiconductor Corporation
FGPF4536 Rev. C1
0
10
20
30
40
50
Gate Resistance, RG [ ]
4
www.fairchildsemi.com
FGPF4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
100
400
Switching Time [ns]
Switching Time [ns]
tr
10
td(on)
Common Emitter
VGE = 15V, RG = 5
tf
100
o
o
TC = 25 C
TC = 25 C
o
o
TC = 125 C
1
10
20
30
40
td(off)
Common Emitter
VGE = 15V, RG = 5
TC = 125 C
10
10
50
Collector Current, IC [A]
20
30
40
50
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs. Collector Current
5000
1000
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
o
TC = 25 C
Switching Loss [uJ]
Switching Loss [uJ]
1000
o
TC = 125 C
Eoff
100
Eon
Eoff
100
Eon
Common Emitter
VGE = 15V, RG = 5
10
o
TC = 25 C
o
TC = 125 C
10
0
10
20
30
40
Gate Resistance, RG [ ]
1
50
10
20
30
40
50
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics
500
Collector Current, IC [A]
100
10
1
Safe Operating Area
o
VGE = 15V, TC = 125 C
0.1
1
10
100
Collector-Emitter Voltage, VCE [V]
©2010 Fairchild Semiconductor Corporation
FGPF4536 Rev. C1
500
5
www.fairchildsemi.com
FGPF4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics
FGPF4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics
Figure 18.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
8
0.5
1
0.2
0.1
0.05
0.1
PDM
0.02
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
0.01 -5
10
-4
10
-3
10
-2
-1
10
10
1
10
2
10
Rectangular Pulse Duration [sec]
©2010 Fairchild Semiconductor Corporation
FGPF4536 Rev. C1
6
www.fairchildsemi.com
FGPF4536 — 360 V PDP Trench IGBT
Package Dimensions
Figure 19. TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF22S-003
Dimensions in Millimeters
©2010 Fairchild Semiconductor Corporation
FGPF4536 Rev. C1
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2010 Fairchild Semiconductor Corporation
FGPF4536 Rev. C1
8
www.fairchildsemi.com
FGPF4536 — 360 V PDP Trench IGBT
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