VS-GB200TS60NPbF
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Vishay Semiconductors
INT-A-PAK “Half Bridge”
(Ultrafast Speed IGBT), 209 A
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: optimized for hard switching speed
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
INT-A-PAK
• UL approved file E78996
• Designed for industrial level
PRODUCT SUMMARY
VCES
600 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
IC DC
209 A
VCE(on) at 200 A, 25 °C
2.6 V
Speed
8 kHz to 30 kHz
Package
INT-A-PAK
Circuit
Half bridge with SMD gate resistor
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
TEST CONDITIONS
MAX.
UNITS
600
V
TC = 25 °C
209
TC = 80 °C
142
Pulsed collector current
ICM
400
Clamped inductive load current
ILM
400
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Maximum power dissipation
PD
Isolation voltage
Operating junction temperature range
VISOL
TJ
A
TC = 25 °C
178
TC = 80 °C
121
± 20
V
TC = 25 °C
781
TC = 80 °C
438
Any terminal to case, t = 1 min
2500
V
-40 to +150
°C
W
Revision: 10-Jun-15
Document Number: 94503
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Collector to emitter leakage current
Diode forward voltage drop
Gate to emitter leakage current
SYMBOL
VBR(CES)
VCE(on)
VGE(th)
ICES
VFM
IGES
TEST CONDITIONS
MIN.
TYP.
MAX.
VGE = 0 V, IC = 500 μA
600
-
-
VGE = 15 V, IC = 100 A
-
1.95
2.1
VGE = 15 V, IC = 200 A
-
2.6
2.84
VGE = 15 V, IC = 100 A, TJ = 125 °C
-
2.28
2.5
VGE = 15 V, IC = 200 A, TJ = 125 °C
-
3.14
3.48
VCE = VGE, IC = 500 μA
3
4.2
6
VGE = 0 V, VCE = 600 V
-
0.005
0.2
VGE = 0 V, VCE = 600 V, TJ = 150 °C
-
0.01
15
UNITS
V
mA
IC = 100 A
-
1.39
1.78
IC = 200 A
-
1.64
2.2
IC = 100 A, TJ = 125 °C
-
1.32
1.69
IC = 200 A, TJ = 125 °C
-
1.67
2.30
VGE = ± 20 V
-
-
± 200
nA
MIN.
TYP.
MAX.
UNITS
-
3.65
-
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Turn-on switching loss
SYMBOL
TEST CONDITIONS
Eon
IC = 200 A, VCC = 360 V, VGE = 15 V,
Rg = 10  L = 200 μH, TJ = 25 °C
Turn-off switching loss
Eoff
-
6.9
-
Total switching loss
Etot
-
10.55
-
Turn-on switching loss
Eon
-
3.8
-
Turn-off switching loss
Eoff
-
7.8
-
Total switching loss
Etot
-
11.6
-
-
507
-
tr
-
133
-
td(off)
-
538
-
-
92
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
mJ
IC = 200 A, VCC = 360 V, VGE = 15 V,
Rg = 10  L = 200 μH, TJ = 125 °C
ns
tf
Reverse bias safe operating area
RBSOA
TJ = 150 °C, IC = 400 A,
Rg = 27 VGE = 15 V to 0
Short circuit safe operating area
SCSOA
TJ = 150 °C, VCC = 400 V, VP = 600 V,
Rg = 27 VGE = 15 V to 0
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
IF = 50 A, dIF/dt = 200 A/μs,
VCC = 400 V, TJ = 25 °C
IF = 50 A, dIF/dt = 200 A/μs,
VCC = 400 V, TJ = 125 °C
Fullsquare
10
-
-
-
226
260
ns
-
17
20
A
-
1900
2600
nC
-
290
330
ns
-
25
30
A
-
3600
5000
nC
Revision: 10-Jun-15
Document Number: 94503
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-40
-
150
°C
-
0.13
0.16
-
0.19
0.32
-
0.1
-
case to heatsink
-
-
4
case to terminal 1, 2, 3
-
-
3
-
185
-
Operating junction and storage temperature range
IGBT
Junction to case per leg
Diode
Case to sink per module
RthJC
RthCS
°C/W
Mounting torque
Nm
Weight
300
g
300
Vge = 18V
Vge = 15V
Vge = 12V
250
250
200
150
IcE (A)
IcE (A)
200
Vge = 9V
150
100
100
50
50
Tj = 125°C
Tj = 25°C
0
0
0
1
2
3
0
4
2
3
4
5
6
7
8
9
VGE (V)
Fig. 1 - Typical IGBT Output Characteristics
TJ = 25 °C, tp = 500 μs
Fig. 3 - Typical Transfer Characteristics
VCE = 20 V, tp = 500 μs
300
3.5
VCE, Collector -to-Emitter Voltage (V)
Vge = 18V
Vge = 15V
Vge = 12V
250
200
IcE (A)
1
VCE (V)
Vge = 9V
150
100
50
Ic = 200A
3
2.5
Ic = 100A
2
Ic = 50A
1.5
1
0
0
1
2
3
4
5
0
40
80
120
160
VCE (V)
TJ, Junction Temperature (°C)
Fig. 2 - Typical IGBT Output Characteristics
TJ = 125 °C, tp = 500 μs
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
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1000
200
td(off)
Switching Time (ns)
IF (A)
150
100
Tj = 125°C
50
td(on)
tf
100
tr
Tj = 25°C
10
0
0.0
0.5
1.0
1.5
40
2.0
60
80
100 120 140 160 180 200 220
VF (V)
IC (A)
Fig. 8 - Typical Switching Time vs. IC
TJ = 125 °C, L = 200 μH, VCC = 360 V,
Rg = 10 , VGE = 15 V
Fig. 5 - Diode Forward Characteristics,
tp = 500 μs
13.0
160
12.0
11.0
120
Eoff
10.0
Energy (mJ)
TC, Case Temperature (°C)
140
100
80
DC
60
9.0
8.0
Eon
7.0
6.0
40
5.0
20
4.0
3.0
0
0
50
100
150
200
5
250
10
15
20
25
30
35
40
45
50
Maximum DC Collector Current (A)
Rg (Ω)
Fig. 6 - Maximum Collector Current vs.
Case Temperature
Fig. 9 - Typical Energy Loss vs. Rg
TJ = 125 °C, L = 200 μH, VCC = 360 V,
ICE = 200 A, VGE = 15 V
8.0
10000
7.0
5.0
Energy Time (ns)
Energy (mJ)
6.0
Eoff
4.0
3.0
Eon
2.0
1000
td(off)
td(on)
tr
100
tf
1.0
0
10
50
100
150
200
IC (A)
Fig. 7 - Typical Energy Loss vs. IC
TJ = 125 °C, L = 200 μH, VCC = 360 V,
Rg = 10 , VGE = 15 V
0
10
20
30
40
50
RG (Ω)
Fig. 10 - Typical Switching Time vs. Rg
TJ = 125 °C, L = 200 μH, VCC = 360 V,
ICE = 200 A, VGE = 15 V
Revision: 10-Jun-15
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100
Total Switching Losses (mJ)
10 ohm
90
80
IRR (A)
70
27 ohm
60
50
47 ohm
40
30
20
40
80
120
160
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
5
200
10
15
IF (A)
25
30
35
40
45
50
RG (Ω)
Fig. 14 - Typical Switching Losses vs. Gate Resistance
TJ = 125 °C, L = 200 μH, Rg = 10 ,
VCC = 360 V, VGE = 15 V
Fig. 11 - Typical Diode Irr vs. IF
TJ = 125 °C
100
100
Total Switching Losses (mJ)
90
80
IRR (A)
20
70
60
50
40
30
Ic = 200A
10
Ic = 100A
Ic = 50A
1
0
10
20
30
40
50
0
25
50
75
100
125
TJ - Junction Temperature (°C)
RG (Ω)
Fig. 15 - Typical Switching Losses vs.
Junction Temperature;
L = 200 μH, Rg = 10 , VCC = 360 V, VGE = 15 V
Fig. 12 - Typical Diode Irr vs. Rg
TJ = 125 °C, IF = 200 A
100
12
Total Switching Losses (mJ)
11
IRR (A)
90
80
70
60
10
9
8
7
6
5
4
3
50
2
600
700
800
900 1000 1100 1200 1300
40
60
80 100 120 140 160 180 200 220
dIF / dt (A/μs)
IC (A)
Fig. 13 - Typical Diode Irr vs. dIF/dt
TJ = 125 °C, VCC = 360 V, IF = 200 A, VGE = 15 V
Fig. 16 - Typical Switching Losses vs.
Collector to Emitter Current;
TJ = 125 °C,Rg1 = 10 , Rg2 = 0 , VCC = 360 V, VGE = 15 V
Revision: 10-Jun-15
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Thermal response (Z thJC)
1
0.1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
0.01
D = 0.02
D = 0.01
Notes:
1. Duty Factor D = t1/t2
Single Pulse
(Thermal Response)
0.001
1E-05
1E-04
1E-03
1E-02
2. Peak Tj = Pdm x ZthJC + Tc
1E-01
1E+00
1E+01
t1 , Rectangular Pulse Duration (sec)
Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Thermal response (Z thJC)
1
D = 0.5
0.1
D = 0.2
D = 0.1
D = 0.05
0.01
D = 0.02
D = 0.01
Notes:
1. Duty Factor D = t1/t2
Single Pulse
(Thermal Response)
0.001
1E-05
1E-04
1E-03
2. Peak Tj = Pdm x ZthJC + Tc
1E-02
1E-01
1E+00
t1 , Rectangular Pulse Duration (sec)
Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (HEXFRED®)
Revision: 10-Jun-15
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ORDERING INFORMATION TABLE
Device code
VS-
G
B
200
T
S
60
N
PbF
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Insulated Gate Bipolar Transistor (IGBT)
3
-
B = IGBT Generation 5 NPT
4
-
Current rating (200 = 200 A)
5
-
Circuit configuration (T = Half-bridge)
6
-
Package indicator (S = INT-A-PAK)
7
-
Voltage rating (60 = 600 V)
8
-
Speed/type (N = Ultrafast IGBT)
9
-
Lead (Pb)-free
CIRCUIT CONFIGURATION
3
6
7
1
4
5
2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95543
Revision: 10-Jun-15
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Outline Dimensions
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Vishay Semiconductors
INT-A-PAK IGBT
Ø 6.5
(Ø 0.25)
80 (3.15)
23 (0.91)
14.3
(0.56)
23 (0.91)
5 (0.20)
2.8 x 0.8
(0.11 x 0.03)
14.5
(0.57)
2
3
5
1
66 (2.60)
3 screws M5 x 10
4
35 (1.38)
7
6
17 (0.67)
29 (1.15)
28 (1.10)
9 (0.33)
30
(1.18)
7 (0.28)
DIMENSIONS in millimeters (inches)
37 (1.44)
94 (3.70)
Revision: 27-Mar-13
Document Number: 95543
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
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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