Methods Kohm-Sham DFT simulations were carried out using the Gaussian03TM package, Revision C.02 [M1]. In order to optimize the structures used in the present work, we used the PBE-PBE generalized gradient approximation for the exchange-correlation term [M2], and Troullier-Martin potentials [M3]. Optimizations have been carried out using the 3-21G basis set [M4] and an 8 x 8 x 8 Monkhorst-Pack mesh grid, equally spaced in the k-space [M5]. The use of the 3-21G basis set is motivated by the complexity of the calculations to be performed, requiring the optimization of several transition structures at multiple pressures. Single-point energy calculations using more sophisticated basis sets, 6-31G(d, p) and 6-311G(d, p), were also performed and shown to never affect the stability of any polytype with respect to any other. In particular, at room conditions, the difference in SCF energy between B11Cp(CBC) and B12(CCC) polytypes depends on the chosen basis set for less than 5%. Although the Gaussian package is not tailored for use in highly metallic systems, it has been proven to correctly deal with weakly metallic systems such as graphite (for instance in metallic carbon nanotubes [M6], where the obtained results [M7] have been found to be consistent with those from codes utilizing more sophisticated smearing utilities). Furthermore, in the present work, we have been able to exploit some improved capabilities associated with the more recent Gaussian03 version. Specifically, a Fermi broadening fractional occupation number method [M8] was used in all our simulations in order to deal with electronic bands touching or approaching the Fermi level. The Gibbs free energies of the various polytypes were provided by the thermochemistry utilities [M9] of the Gaussian package. In brief, from the total energy 1 per atom (E0) we calculated the Helmholtz free energy per site F ≈ E0 + U0 + Fvib(T) where U0 is the zero-point energy, and Fvib the temperature-dependent vibrational energy within the quasi-harmonic approximation. For both, we have used a Debye approximation of the vibrational density-of states. From that, the relevant quantity to test a polytype stability, the Gibbs free energy G = F + P⋅V, can be easily extracted for all polytypes, where V is the unit cell volume divided by the number of atoms in the unit cell. The as calculated free energies have been already inclusive of the different levels of degeneracy of the various polytypes. It must be noted that the choice of using the Gibbs free energy per site in estimating the phase population probabilities holds since the disorder affects the material at an atomistic level during its out-of-equilibrium formation. In contrast, the coexistence of the various phases at equilibrium conditions is controlled by disorder at a crystallographic level, hence, it requires the use of the Gibbs energy per unit cell as a reference quantity. Room pressure elastic constants of B4C were determined theoretically for the first time by Lee et al [M10]. Ultrasonic experiments by McClellan et al [M11] gave data in good agreement with the theory (uncertainty: ±20%). By calculating the force on the atoms and their derivatives, we obtained force constants within such an uncertainty range for B11Cp(CBC), B11Ce(CBC), B11Ce(BCC) and B12(CCC) at room-pressure (10-4 GPa). Through the elastic constants, we have then determined the changes in lattice parameters occurring at 40 GPa stress and subsequently we used such lattice parameters for new structure optimization. The as obtained free energies agree well with predictions by the Birch-Murnaghan high-pressure equation of state [M12]. We have then used such an equation to interpolate the Gibbs free energy between 10-4 and 40 GPa. The transition 2 from the boron carbide polytypes and the B12/Graphite phase have been determined in two steps. First, atomic coordinates corresponding to local minima along the corresponding reaction path have been determined, through stability calculations, to correspond to the B11Ce(CBC), B11Ce(CCB) and B12(CCC) polytypes. Second, a QST3 calculation [M13] allowed us to optimize the intermediate first order saddle point and calculate the correspondent transition energies shown in Fig. 3. 3 References [M1] M.J. Frisch , G. W. Trucks, H. B. Schlegel, G. E. Scuseria, M. A. Robb, J. R. Cheeseman, J. A. Montgomery, Jr., T. Vreven,. N. Kudin, J. C. Burant, J. M. Millam, S. S. Iyengar, J. Tomasi, V. Barone, B. Mennucci, M. Cossi, G. Scalmani, N. Rega, G. A. Petersson, H. Nakatsuji, M. Hada, M. Ehara, K. Toyota, R. Fukuda, J. Hasegawa, M. Ishida, T. Nakajima, Y. Honda, O. Kitao, H. Nakai, M. Klene, X. Li, J. E. Knox, H. P. Hratchian, J. B. Cross, C. Adamo, J. Jaramillo, R. Gomperts, R. E. Stratmann, O. Yazyev, A. J. Austin, R. Cammi, C. Pomelli, J. W. Ochterski, P. Y. Ayala, K. Morokuma, G. A. Voth, P. Salvador, J. J. Dannenberg, V. G. Zakrzewski, S. Dapprich, A. D. Daniels, M. C. Strain, O. Farkas, D. K. Malick, A. D. Rabuck, K. Raghavachari, J. B. Foresman, J. V. Ortiz, Q. Cui, A. G. Baboul, S. Clifford, J. Cioslowski, B. B. Stefanov, G. Liu, A. Liashenko, P. Piskorz, I. Komaromi, R. L. Martin, D. J. Fox, T. Keith, M. A. Al-Laham, C. Y. Peng, A. Nanayakkara, M. Challacombe, P. M. W. Gill, B. Johnson, W. Chen, M. W. Wong, C. Gonzalez, and J. A. Pople, Gaussian Inc., Wallingford CT, 2004 [M2] J.P. Perdew, K. Burke, M. Ernzerhof, Phys. Rev. Lett. 77 (1996) 3865 [M3] N. Troullier and J. L. Martins Phys. Rev. B 43 (1991) 1993 [M4] A.E. Frisch, M.J. Frisch, G. W. Trucks, Gaussian03 User’s Reference, Gaussian Inc., Wallingford CT, 2003, page 23; J. B. Foresman, A.E. Frisch, Exploring Chemistry with Electronic Structure Methods, Gaussian Inc, Pittsburgh PA, 1996, page 102 [M5] H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13 (1976) 5188 [M6] N. Sano, M. Chhowalla, D. Roy, G.A.J. Amaratunga, Phys. Rev. B 66 (2002) 113403 4 [M7] X. Zhao, Y. Liu, S. Inoue, T. Suzuki, R. O. Jones, Y. Ando, Phys. Rev. Lett. 92 (2004) 125502 [M8] A.D. Rabuck, G.E. Scuseria, J. Chem. Phys. 110 (1999) 695; A.E. Frisch, M.J. Frisch, G. W. Trucks, ref. [M4] page 200. [M9] A.E. Frisch, M.J. Frisch, G. W. Trucks, ref. [M4] page 90; J. B. Foresman, A.E. Frisch, ref. [M4] page 66. [M10] S. Lee, D.M. Bylander, L.Kleinman, Phys Rev B45 (1992) 3245. [M11] K.J. McClellan F. Chu, J.M. Roper, I. Shindo, J. Mater Sci 36 (2001) 3403 [M12] see e.g. K. Albe, Rev B55 (1997) 6203 and G. Kern, G. Kresse, J. Hafner, Phys. Rev. B59 (1999) 8551 for a similar approach in boron nitride based on the Gibbs free energy. [M13] A.E. Frisch, M.J. Frisch, G. W. Trucks, ref. [M4] page 173. 5