Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-10386
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 1.8 GHz
• 26 dB Typical Gain at
1.5 GHz
• 10 dBm Typical P1dB at
1.5 GHz
• Unconditionally Stable
(k>1)
• Surface Mount Plastic
Package
Description
The INA-10386 is a low-noise
silicon bipolar Monolithic Microwave Integrated Circuit (MMIC)
feedback amplifier housed in a
low cost surface mount plastic
package. It is designed for narrow
or wide bandwidth commercial
and industrial applications that
require high gain and moderate
power.
The INA series of MMICs is
fabricated using Agilent’s 10 GHz
fT, 25 GHz fMAX, ISOSAT™-I
silicon bipolar process which uses
nitride self-alignment,
submicrometer lithography,
trench isolation, ion implantation,
gold metallization and polyimide
intermetal dielectric and scratch
protection to achieve excellent
performance, uniformity and
reliability.
Typical Biasing Configuration
VCC
Id = 45 mA
nom.
RFC (Optional)
Rbias
4
Cblock
RF IN
Cblock
3
1
2
RF OUT
Vd = 6.0 V
86 Plastic Package
2
INA-10386 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
80 mA
750 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance:
θjc = 100°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 10 mW/°C for TC > 75°C.
INA-10386 Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Vd = 6V, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 1.5 GHz
∆GP
Gain Flatness
f = 0.1 to 1.5 GHz
f3 dB
3 dB Bandwidth[2]
ISO
VSWR
Reverse Isolation (|S12
| 2)
f = 2.0 GHz
Input VSWR
Units
Min.
Typ.
dB
23.0
26.0
dB
±1.0
GHz
1.8
dB
Max.
30
f = 0.1 to 2.0 GHz
1.5:1
Output VSWR
f = 0.1 to 2.0 GHz
NF
50 Ω Noise Figure
f = 1.5 GHz
1.5:1
P1 dB
Output Power at 1 dB Gain Compression
f = 1.5 GHz
dBm
10
IP3
Third Order Intercept Point
f = 1.5 GHz
dBm
23
tD
Group Delay
f = 1.5 GHz
psec
Id
Device Current
dV/dT
Device Voltage Temperature Coefficient
dB
mA
mV/°C
3.8
250
35
45
55
+10
Notes:
1. The recommended operating current range for this device is 40 to 60 mA. Typical performance as a function of current
is on the following page.
INA-10386 Part Number Ordering Information
Part Number
No. of Devices
Container
INA-10386-TR1
INA-10386-BLK
1000
100
7" Reel
Antistatic Bag
3
INA-10386 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Vd = 6 V)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.05
0.10
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
.12
.11
.13
.17
.21
.21
.19
.14
.07
.08
–9
–17
–79
–137
171
127
106
86
85
148
26.6
26.7
26.7
26.8
26.0
23.6
21.7
19.2
16.8
14.2
21.4
21.6
21.6
21.9
20.0
15.1
12.2
9.1
6.9
5.1
–4
–8
–38
–80
–126
–168
159
127
97
70
–35.2
–35.6
–35.7
–34.1
–33.1
–29.9
–28.4
–26.7
–24.8
–24.7
.017
.017
.016
.020
.023
.032
.038
.048
.058
.058
1
3
10
43
53
55
58
55
50
51
.11
.12
.07
.03
.07
.07
.04
.05
.06
.04
–3
–10
–40
18
32
9
42
56
47
40
1.51
1.50
1.59
1.33
1.26
1.23
1.27
1.37
1.44
1.82
INA-10386 Typical Performance, TA = 25°C
(unless otherwise noted)
30
60
30
TC = +85°C
TC = +25°C
TC = –25°C
Gain Flat to DC
50
25
0.1 – 1.0 GHz
25
2.0 GHz
20
Gp (dB)
Id (mA)
Gp (dB)
40
30
20
20
15
15
10
10
0.1
0.2
0.5
1.0
2.0
10
35
0
5.0
0
2
4
6
8
Vd (V)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Vd = 6 V.
Figure 2. Device Current vs. Voltage.
9
NF (dB)
5.0
NF
4.0
4.0
Id = 45 mA
NF (dB)
11
P1 dB (dBm)
13
P1 dB (dBm)
Gp (dB)
25
Id = 55 mA
15
P1 dB
10
5
3.0
65
4.5
Gp
26
55
Figure 3. Power Gain vs. Current.
20
27
45
Id (mA)
FREQUENCY (GHz)
Id = 40, 55 mA
3.5
Id = 45, 50 mA
3.0
2.0
–55
–25
+25
+85
+125
TEMPERATURE (°C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.5 GHz, Vd = 6 V.
0
.02
.05
0.1
0.2
0.5
1.0
2.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
2.5
.02
.05
0.1
0.2
0.5
1.0
2.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
4
white ink dot
N10
45°
1
C
L
3
2.34 ± 0.38
(0.092 ± 0.015)
2
1.52 ± 0.25
(0.060 ± 0.010)
2.67 ± 0.38
(0.105 ± 0.15)
5° TYP.
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
8° MAX
0° MIN
2.16 ± 0.13
(0.085 ± 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
Obsoletes 5965-9679E
5967-6159E (11/99)