Gen eral Pu rpose MM I C : B GB 7 07 L7 ESD GPS L NA for L 1 Ba nd (1 54 5 M Hz - 16 05 M H z) Application Note AN396 About this document Scope and purpose This application note describes Infineon’s General Purpose MMIC: BGB707L7ESD as a GPS LNA for L1 band applications. 1. This application note documents the design of a GPS band L1 LNA intended for use with a SAW prefilter. 2. The BGB707L7ESD is used in this documented design. 3. GPS receiver for L1 band is the primary application of this document. 4. This design along with AN397 provides a solution to both L1 & L2s GPS band recievers where a single type of LNA MMIC is required. 5. Key performance parameters include Gan = 18 dB, Return Loss < -10 dB and OP1dB = 2.1 dBm. 1 1.0, 2014-10-27 GPS LNA for L1 Band Introduction Table of Content 1 Introduction ............................................................................................................... 4 2 BGB707L7ESD Overview .............................................................................................. 5 3 Application Circuit and Performance Overview .............................................................. 8 4 Measurement Graphs ................................................................................................ 10 5 Evaluation Board and Layout Information ................................................................... 16 6 Authors .................................................................................................................... 18 Application Note AN396 2 1.0, 2014-10-27 GPS LNA for L1 Band Introduction List of Figures1 Figure 1 Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 BGB707L7ESD in TSLP-7-1 .................................................................................................................. 5 Equivalent Circuit of BGB707L7ESD ................................................................................................... 6 Package and pin connections of BGB707L7ESD ............................................................................... 6 Schematics of the BGB707L7ESD Application Circuit ....................................................................... 9 Gain of BGB707L7 for GPS L1 Band................................................................................................... 10 Narrow Band Gain of BGB707L7 for GPS L1 Band ............................................................................ 11 IMD3 of BGB707L7 for GPS L1 Band .................................................................................................. 11 Input P1dB of BGB707L7 for GPS L1 Band........................................................................................ 12 Input Return Loss of BGB707L7 for GPS L1 Band ............................................................................. 12 Input Return Loss Smith Chart of BGB707L7 for GPS L1 Band ........................................................ 13 Output Return Loss of BGB707L7 for GPS L1 Band .......................................................................... 13 Output Return Loss Smith Chart of BGB707L7 for GPS L1 Band ..................................................... 14 Reverse Isolation of BGB707L7 for GPS L1 Band .............................................................................. 14 Noise Figure of BGB707L7 for GPS L1 Band...................................................................................... 15 Stability of BGB707L7 for GPS L1 Band ............................................................................................ 15 Photo Picture of Evaluation Board (overview) ................................................................................. 16 Photo Picture of Evaluation Board (detailed view).......................................................................... 16 PCB Layer Information ...................................................................................................................... 17 List of Tables Table 1 Table 2 Table 3 Pin Assignment of BGB707L7ESD ....................................................................................................... 7 Electrical Characteristics (at room temperature) .............................................................................. 8 Bill-of-Materials ................................................................................................................................... 9 1) The graphs are generated with the simulation program AWR Microwave Office®. Application Note AN396 3 1.0, 2014-10-27 GPS LNA for L1 Band Introduction 1 Introduction The GPS satellites are at an orbit altitude of more than 20,000 km away from earth’s surface and transmit power in the range of +47 dBm. After taking losses (atmospheric, antenna etc.) into account, the received signal strength at the GPS device input is very low in the range of -130 dBm. The ability of the GPS device to receive such a low signal strength and provide meaningful information to the enduser depends strongly on the noise figure of the GPS receive chain. This ability which is called receiver sensitivity can be improved by using a low-noise amplifier with low noise figure and high gain at the input of the receiver chain. The improved sensitivity results in a shorter Time-To-First-Fix (TTFF), which is the time required for a GPS receiver to acquire satellite signals and navigation data, and calculate a position. Noise figure of the LNA defines the overall noise figure of the GPS receiver system. This is where the BGB707L7ESD ( as outlined in this application note) along with a SAW filter on its input, can provide a GPS LNA with good noise figure and high gain thereby improving the receiver sensitivity significantly. Application Note AN396 4 1.0, 2014-10-27 GPS LNA for L1 Band BGB707L7ESD Overview 2 BGB707L7ESD Overview 2.1 Features High performance general purpose wideband MMIC LNA ESD protection integrated for all pins (3 kV for RF input vs. GND, 2 kV for all other pin combinations, HBM) Integrated active biasing circuit enables stable operating point against temperature and processing variations. Excellent noise figure from Infineon´s reliable high volume SiGe:C technology High gain and linearity at low current consumption Supply voltage: 1.8 V to 4.0 V Adjustable operating current 2.1 mA to 25 mA by external resistor Power-off function Very small and leadless package TSLP-7-1, 2.0 x 1.3 x 0.4 mm3 Pb-free (RoHS compliant) and halogen-free package Qualification report according to AEC-Q101 available 2.2 Figure 1 BGB707L7ESD in TSLP-7-1 Key Applications of BGB707L7ESD Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, WiFi, Bluetooth Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile/portable TV, CATV, FM Radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Application Note AN396 5 1.0, 2014-10-27 GPS LNA for L1 Band BGB707L7ESD Overview 2.3 Description The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of applications. The device is based on Infineon Technologies’ cost effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package. Please visit the product page of BGB707L7ESD for more information. Figure 1 Equivalent Circuit of BGB707L7ESD Figure 2 Package and pin connections of BGB707L7ESD Application Note AN396 6 1.0, 2014-10-27 GPS LNA for L1 Band BGB707L7ESD Overview Table 1 Pin Assignment of BGB707L7ESD Pin No. Symbol Function 1 Vcc Supply voltage 2 Vbias Bias reference voltage 3 RFin RF input 4 RFout RF output 5 Vctrl On/Off control voltage 6 Adj Current adjustment pin 7 GND DC/RF GND Application Note AN396 7 1.0, 2014-10-27 GPS LNA for L1 Band Application Circuit and Performance Overview 3 Application Circuit and Performance Overview In this chapter the performance of the application circuit, the schematic and bill-on-materials are presented. 3.1 Device: BGB707L7ESD Application: GPS LNA PCB Marking: BGB7-Family v3.1 EVB Order No.: AN396 Summary of Measurement Results The performance of BGB707L7ESD for GPS Band L1 LNA is summarized in the following table. Table 2 Electrical Characteristics (at room temperature) Text Parameter Symbol Value Unit Frequency Range Freq 1575 MHz DC Voltage Vcc 3 V DC Current Icc 10 mA Gain G 18.2 dB Loss of input/output line of 0.1 dB included Noise Figure NF 1.2 dB Loss of input line of 0.1 dB is deembeded Input Return Loss RLin 13.2 dB Output Return Loss RLout 11.6 dB Reverse Isolation IRev 27.2 dB Input P1dB IP1dB -15.1 dBm Output P1dB OP1dB 2.1 dBm Input IP3 IIP3 0.5 dBm Output IP3 OIP3 18.7 dBm Stability k >1 -- Application Note AN396 8 Comment/Test Condition Pin= -30 dBm, f1=1575 MHz, f2=1576 MHz Measured up to 10 GHz 1.0, 2014-10-27 GPS LNA for L1 Band Application Circuit and Performance Overview 3.2 Schematics and Bill-of-Materials Ther schematic of BGB707L7ESD for GPS LNA is presented in Figure 3 and its bill-of-materials is shown in Table 3. Vcc C4 R2 1 R3 6 L2 LNA_EN 2 C2 RFin BGB707 5 L1 RFout 3 4 C1 R4 R1 Figure 3 Table 3 Symbol C5 C3 Schematics of the BGB707L7ESD Application Circuit Bill-of-Materials Value Unit Size Manufacturer R1 1 kΩ 0402 Any Negative feedback R2 820 Ω 0402 Any Base bias R3 51 Ω 0402 Any Stability R4 15 Ω 0402 Any Stability C1 4.7 pF 0402 KOA NPO Input DC block C2 1 nF 0402 KOA NPO RF decoupling C3 1 pF 0402 KOA NPO RF decoupling/DC blocking C4 1 nF 0402 KOA NPO RF decoupling C5 10 pF 0402 KOA NPO Output DC block L1 4.3 nH 0402 muRata LQG RF chock/DC bias L2 5.1 nH 0402 muRata LQG RF chock/DC bias Application Note AN396 9 Comment 1.0, 2014-10-27 GPS LNA for L1 Band Measurement Graphs 4 Measurement Graphs The performance of the application circuit is presented with the following graphs. Gain 30 1575 MHz 18.82 dB 20 10 0 -10 500 Figure 4 1500 2500 Frequency (MHz) 3500 4500 Gain of BGB707L7 for GPS L1 Band Application Note AN396 10 1.0, 2014-10-27 GPS LNA for L1 Band Measurement Graphs Narrow Band Gain 30 1575.42 MHz 18.82 dB 20 10 0 -10 1550 Figure 5 1570 1590 Frequency (MHz) 1610 1625 Narrow Band Gain of BGB707L7 for GPS L1 Band IMD3 0 1576 -11 Power (dBm) -20 -40 1577 -72 -60 -80 -100 1573 Figure 6 1574 1575 1576 Frequency (MHz) 1577 1578 IMD3 of BGB707L7 for GPS L1 Band Application Note AN396 11 1.0, 2014-10-27 GPS LNA for L1 Band Measurement Graphs Input P1dB 20 -34 19 -15.1 18 Gain (dB) 15 10 5 -35 Figure 7 -25 -15 Pin (dB) -5 0 Input P1dB of BGB707L7 for GPS L1 Band Input Return Loss 5 0 -5 1575 MHz -13.19 dB -10 -15 -20 500 Figure 8 1500 2500 Frequency (MHz) 3500 4500 Input Return Loss of BGB707L7 for GPS L1 Band Application Note AN396 12 1.0, 2014-10-27 GPS LNA for L1 Band Measurement Graphs Swp Max 4500MHz 2. 0 0. 6 0.8 1.0 Input Return Loss Smith Chart 0. 3. 0 4 4. 0 5.0 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 -10.0 2 0 0 .0 Swp Min 500MHz -1.0 -0.8 -0 .6 -2 .0 .4 -3 -0 -4 . 1575 MHz r 0.714356 x -0.249715 -5. -0. Input Return Loss Smith Chart of BGB707L7 for GPS L1 Band Figure 9 Output Return Loss 10 0 1575 MHz -11.56 dB -10 -20 -30 500 Figure 10 1500 2500 Frequency (MHz) 3500 4500 Output Return Loss of BGB707L7 for GPS L1 Band Application Note AN396 13 1.0, 2014-10-27 GPS LNA for L1 Band Measurement Graphs Swp Max 4500MHz 2. 0 0. 6 0.8 1.0 Output Return Loss Smith Chart 0. 3. 0 4 4. 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 10.0 0.6 0.4 0.2 1575 MHz r 0.589748 x -0.0931759 0 0 5.0 -10.0 2 0 .0 .0 Swp Min 500MHz -1.0 -0.8 -0 .6 -2 .0 -3 .4 -4 -0 -5. -0. Output Return Loss Smith Chart of BGB707L7 for GPS L1 Band Figure 11 Reverse Isolation 0 1575 MHz -27.14 dB -20 -40 -60 -80 500 Figure 12 1500 2500 Frequency (MHz) 3500 4500 Reverse Isolation of BGB707L7 for GPS L1 Band Application Note AN396 14 1.0, 2014-10-27 GPS LNA for L1 Band Measurement Graphs Noise Figure 4 NF (dB) 3 1575.4 1.2 2 1 0 300 1300 2300 3000 Noise Figure of BGB707L7 for GPS L1 Band Figure 13 Stability 3 2.5 2 1.5 1 0.5 0 100 Figure 14 2100 4100 6100 Frequency (MHz) 8100 10000 Stability of BGB707L7 for GPS L1 Band Application Note AN396 15 1.0, 2014-10-27 GPS LNA for L1 Band Evaluation Board and Layout Information 5 Evaluation Board and Layout Information In this application note, the following PCB is used: PCB Marking: BGB7-Family v3.1 PCB material: FR4 r of PCB material: 4.8 Figure 15 Photo Picture of Evaluation Board (overview) Figure 16 Photo Picture of Evaluation Board (detailed view) Application Note AN396 16 1.0, 2014-10-27 GPS LNA for L1 Band Evaluation Board and Layout Information Figure 17 PCB Layer Information Application Note AN396 17 1.0, 2014-10-27 GPS LNA for L1 Band Authors 6 Authors Andrew Nelson, Application Engineer of Business Unit “RF and Protection Devices” Revision History Major changes since the last revision Page or Reference Description of change Application Note AN396 18 1.0, 2014-10-27 Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 www.infineon.com Edition 2014-10-27 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG. All Rights Reserved. Do you have a question about any aspect of this document? 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