Empower RF Systems, Inc. ¬
Empower RF Systems, Inc.
Solid state power amplifier based solutions serving the
defense, commercial and industrial markets since 1999
316 West Florence Ave.
Inglewood, CA 90301
Phone: +1 (310) 412-8100
Fax:
+1 (310) 412-9232
Email: sales@empowerrf.com
www.EmpowerRF.com
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Markets Served
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Global Presence
Amplifier Products
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Defense . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Commercial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Industrial and Scientific . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Amplifier Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Amplifier Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Custom Engineering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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3
5
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6
6
Application Notes on Module Use
Technical Reference Material
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Combining our superior engineering capabilities, Empower
RF product lines incorporate state-of-the-art GaN,
LDMOS, MOSFET, GaAsFET and bipolar device technologies. Our extensive library of product designs includes
over four hundred documented solutions ranging from
basic-function PA modules to complete, multifunction
PA assemblies with embedded software and controllers.
Empower RF leverages “building block” combinations of
these documented solutions and the extensive experience
of our technical team to react swiftly to new requirements and to offer a variety of cost-effective, value-added
solutions.
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Products ¬
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It is our priority to design and deliver high
quality, innovative products which solve
customer systems and business requirements.
Operating globally and continuing to expand
our technology resources, Empower RF has
recorded impressive growth since its inception.
Our customer base includes market leading
OEMs and government agencies with an array
of demanding performance requirements.
Design and
Technology Innovations
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12
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Systems and Modules Options
Added Functionality and Features
Reduced Weight Chassis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Dual-Band Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Advanced Systems Control and User Interface . . . . . . . . . . . . . . . . . . . . . . . .
Harsh Environment Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Multi-function, Small Form Factor Module Designs . . . . . . . . . . . . . . . . . . . .
Founded in 1999, Empower RF Systems is a
global leader in power amplifier solutions that
are critical to defense, commercial, and industrial market applications. With our origins in
the design of broadband and band-specific solid
state power amplifiers, Empower continues to
advance the science of RF power amplification
to produce the toughest, most efficient and
cost-effective solutions in the industry.
Markets ¬
Introduction
Design and Technology Innovations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Assurance of Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
www.EmpowerRF.com
Introduction
Introduction ¬
Table of Contents
Assurance of Supply
2
3
Additional Features ¬
Empower is currently supporting contracts that range
from engineering prototypes and low to medium volumes
to production programs with much higher run rates. The
specific arrangements for build and test support vary
depending on the job, but in all cases, final QA and product
certification occurs in Inglewood.
Standard Options ¬
Empower RF currently has two fully equipped R&D
facilities, in-house manufacturing capabilities, and CM
partnerships to handle both small and large scale requirements. The company is ITAR registered and ISO certified.
In addition to our Inglewood facility, the company has
fully equipped design centers in Holbrook, New York and
Irvine, California.
Empower RF is dedicated to anticipate our customers’
high quality requirements through the creative integration
of engineering and manufacturing technologies. This is
achieved by utilizing a comprehensive, timely, and costeffective quality system, which has been the foundation of this
company since its inception.
Markets ¬
Empower RF Systems received ISO9001
accreditation shortly after starting the business
in 1999. We have retained ISO accreditation
since that time and most recently completed
audits and inspections which resulted in
ISO9001:2008 certification.
Introduction ¬
Quality
Interactive web site
Products ¬
Empower’s web site provides detailed product information and parametric search function that
connects the user to our extensive library of released designs.
Standard Options ¬
4
5
Additional Features ¬
As appearing in Microwave Journal, Broadcasters Show Daily, and MPD
Global Presence
Defense
QUEEN ELIZABETH
ISLANDS
Greenland
(DENMARK)
Our broadband, high efficiency, high power
modules and amplifier systems are critical building
blocks in mission critical platforms that not only
protect the modern war fighter, but also enable rapid
communications, surveillance, and counter measure
deployments.
U. S.
NORWAY
ICELAND
SWEDEN
R U S S I A
FINLAND
EST.
LAT.
CANADA
LITH.
UNITED
BELARUS
KINGDOM
IRELAND
POLAND
GERMANY
CZECH REP.
KAZAKHSTAN
MOLDOVA
HUNGARY
BOS. &
HER.
ITALY
MONGOLIA
ROMANIA
SERBIA
MONT.
SPAIN
GEORGIA
BULGARIA
MACEDONIA
ALB.
UNITED
UKRAINE
SLOVAKIA
AUSTRIA
FRANCE
GREECE
TURKMENISTAN
TURKEY
STATES
IRAQ
JAPAN
KOREA
CHINA
AFGHANISTAN
ISRAEL
MOROCCO
NORTH KOREA
UZBEKISTAN
TAJIKISTAN
SYRIA
IRAN
JORDAN
ALGERIA
KYRGYZSTAN
AZERBAIJAN
ARMENIA
PAKISTAN
LIBYA
SAUDI
EGYPT
MEXICO
ARABIA
CUBA
OMAN
MAURITANIA
NIGER
BENIN
CÔTE
D'IVOIRE
GUYANA
GHANA
LAOS
THAILAND
PHILIPPINES
NIGERIA
TOGO
CAMEROON
French Guiana
Cayenne (FRANCE)
SURINAME
COLOMBIA
YEMEN
CHAD
SUDAN
GUINEA
VENEZUELA
BURMA
INDIA
MALI
SENEGAL
ETHIOPIA
CENTRAL
AFRICAN REPUBLIC
SRI
LANKA
SOMALIA
MALDIVES
UGANDA
GABON
M A L A Y S I A
KENYA
REP. OF
THE
CONGO
DEMOCRATIC
REPUBLIC
I
OF THE CONGO
N
D
O
N
E
S
I
A
TANZANIA
Markets ¬
www.EmpowerRF.com
Introduction ¬
Markets Served
BRAZIL
PERU
ANGOLA
ZAMBIA
MALAWI
BOLIVIA
MOZAMBIQUE
ZIMBABWE
NAMIBIA
PARAGUAY
MADAGASCAR
BOTSWANA
A U S T R A L I A
SOUTH
AFRICA
CHILE
URUGUAY
ARGENTINA
Commercial
Offices and Manufacturing Facilities
Empower RF Systems - Corporate Headquarters, Engineering, Production
Products ¬
We offer power amplifier products that are suitable
for wireless infrastructure, mobile broadcast,
coverage-enhancement repeaters and portable
disaster communications. With the additional
demands of complex waveforms and linearization,
we are answering the call for customized solutions.
Empower RF Systems - New York Design Center
Representatives and Customer Engagements
Our products offer ultra-broadband power and
precision required for all types of interference
testing and RFI-hardening verification. Multi-kW
power combining and pulse requirements can be
custom configured as part of an amplifier solution
from Empower.
Middle East
Japan
South America
Russia
China
United Kingdom
Australia
Korea
Scandinavia
Southeast Asia
Europe
India
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Additional Features ¬
For a complete listing and contact information for our manufacturer’s representatives,
go to www.EmpowerRF.com
Standard Options ¬
Industrial and Scientific
North America
For complete specifications on these standard models
and access to information from our extensive library of over 400 amplifier designs,
visit www.EmpowerRF.com
Most Popular Models
Modules from 10 kHz to 520 MHz
Model
Start
(MHz)
Stop
(MHz)
Psat
(Watt)
Gain
(dB)
Dimensions
(Inch)
Device
Type
1058
1150
1037
1063
1024
1093
1067
1006
1159
1042
1116
1112
1095
1094
BBM1C3CP8
BBM2E3CSG
BBM0D3F6H
BBM0D3FAJ
BBM0D3FEL
BBM0A3FKO
BBM0A3KEL
BBM2E3KHM
BBM3C3KN4
BBM2E3KQB
BBM2E3KAJ
BBM1C3KCK
BBM2E3KHM
BBM2E3KKO
1
20
0.15
0.15
0.15
0.01
0.01
20
100
20
20
1
20
20
100
110
230
230
230
230
500
500
500
500
520
520
520
520
300
600
4
10
25
100
25
50
200
350
10
15
50
100
18
34
36
40
44
50
44
46
11
24
40
42
46
50
8.3x6.4x1.2
9.7x8.2x1.25
6.0x3.0x1.1
6.0x3.0x1.1
6.4x3.4x1.1
HS assembly
7.0x5.0x1.3
6.4x3.4x1.1
7.0x5.0x1.2
7.2x7.6x1.2
4.0x2.5x1.1
4.0x2.5x1.1
6.4x3.4x1.1
6.4x3.4x1.1
MOSFET
LDMOS
MOSFET
MOSFET
MOSFET
MOSFET
MOSFET
MOSFET
LDMOS
MOSFET
GaN
MOSFET
MOSFET
LDMOS
Model
Start
(MHz)
Stop
(MHz)
Psat
(Watt)
Gain
(dB)
Dimensions
(Inch)
Device
Type
1121
1053
1154
1023
1029
1118
1004
1133
1097
BBM3C3QHM
BBM0D4A3F
BBM1C4A6F
BBM0K4AAJ
BBM3I4AAJ
BBM2E4ACK
BBM1C4AEL
BBM2E4AEM
BBM2E4AEM
100
0.15
1
0.5
400
20
1
20
20
800
1000
1000
1000
1000
1000
1000
1000
1000
50
2
4
10
10
15
25
25
25
52
30
32
40
40
42
44
44
46
6.4x3.4x1.1
6.0x3.0x1.0
3.5x2.5x1.1
6.0x3.0x1.1
6.0x3.0x1.1
4.0x2.5x1.1
6.4x3.4x1.1
6.0x3.0x1.1
6.4x3.4x1.1
GaN
MOSFET
MOSFET
MOSFET
MOSFET
GaN
MOSFET
GaN
MOSFET
8
Stop
(MHz)
Psat
(Watt)
Gain
(dB)
Dimensions
(Inch)
Device
Type
1021
1025
1100
1141
BBM1C4AHA
BBM3I4AHM
BBM2E4AJP
BBM2E4ALP
1
400
20
20
1000
1000
1000
1000
50
50
80
125
20
46
49
51
7.6x7.2x1.2
6.4x3.4x1.1
6.4x3.4x1.1
6.4x6.7x1.3
MOSFET
LDMOS
LDMOS
LDMOS
Modules up to 4200 MHz
SKU
Model
Start
(MHz)
Stop
(MHz)
Psat
(Watt)
Gain
(dB)
Dimensions
(Inch)
Device
Type
1105
1109
1117
1119
1113
1143
1148
1146
1132
1002
1030
1046
1033
1078
1082
BBM3Q5KAM
BBM2E5KEL
BBM3K5KEL
BBM3K5KHM
BBM4A5KHM
BBM3K5KKO
BBM4A6AHM
BBM4A6AK5
BBM3T6AMQ
BBM3Q7E1E
BBM3Q7E9I
BBM3Q7ECK
BBM3Q7EEL
BBM3Q7EHM
BBM3Q7EKO
800
20
500
500
1000
500
1000
1000
960
800
800
800
800
800
800
2500
2500
2500
2500
2500
2500
3000
3000
3000
4200
4200
4200
4200
4200
4200
10
15
25
50
50
100
50
100
160
1.5
8
15
25
50
100
46
40
44
46
46
50
47
50
54
30
38
42
44
46
50
6.0x2.2x0.9
8.5x6.8x1.3
6.0x3.0x1.0
7.4x3.6x1.1
6.4x2.7x1.0
10x5.0x1.0
6.4x3.4x1.1
6.9x4.5x1.2
12x10x1.1
3.1x2.4x0.7
8.5x3.1x0.7
11.1x5.0x1.0
16x10x3.2
HS Assembly
HS Assembly
GaAsFET
GaN
GaN
GaN
GaN
GaN
GaN
GaN
GaN
GaAsFET
GaAsFET
GaAsFET
GaAsFET
GaAsFET
GaAsFET
Modules up to 6 GHz
SKU
Model
Start
(MHz)
Stop
(MHz)
Psat
(Watt)
Gain
(dB)
Dimensions
(Inch)
Device
Type
1138
1167
1131
1168
BBM5K8CAJ
BBM5K8CEL
BBM5K8CGM
BBM5K8CHO
2500
2500
2500
2500
6000
6000
6000
6000
10
25
35
50
40
44
48
47
6.0x3.0x1.0
5.0x2.5x1.3
6.9x3.6x1.1
5.5x3.0x1.3
GaN
GaN
GaN
GaN
9
Additional Features ¬
SKU
Start
(MHz)
Standard Options ¬
Modules up to 1000 MHz
Model
Products ¬
SKU
SKU
Markets ¬
www.EmpowerRF.com
Amplifier Modules
Products
Introduction ¬
Amplifier
Most Popular Models (Continued)
SKU
Model
Start
(MHz)
7073
7071
7063
3040
3055
7005
7054
PCM3H3IEM
PCM3H3IDO
PCM3H3JDO
GCM3I3KKO
GCM3I3KEM
PCM3J3KEM
PCM3J3LDO
390
390
390
420
400
465
450
Stop
(MHz)
Modulated
Power
(Watt)
Calc.
P1dB
(Watt)
Gain
(dB)
Dimensions
(Inch)
Device
Type
395
395
430
475
485
515
520
5W TETRA
20W TETRA
20W TETRA
60W FM
5W TETRA
5W TETRA
60W FM
25
60
60
60
25
25
60
46
50
50
50
46
46
50
5.0x3.8x1.0
8.1x6.7x1.1
8.1x6.7x1.1
6.4x3.4x1.1
5.0x3.8x1.0
5.0x3.8x1.0
8.1x6.7x1.1
LDMOS
LDMOS
LDMOS
LDMOS
LDMOS
LDMOS
LDMOS
SKU
Model
Start
(MHz)
Stop
(MHz)
Modulated
Power
(Watt)
Calc.
P1dB
(Watt)
Gain
(dB)
Dimensions
(Inch)
Device
Type
7051
7026
7028
3014
3029
3070
PCM4Q5A6M
PCM5C5EDM
PCM5C5EFO
GCM4Q5EFM
GCM4Q5EIN
GCM4P5LJN
1930
2110
2110
1800
1800
1745
1990
2170
2170
2200
2200
2550
4W CDMA
20W CDMA
30W CDMA
30W FM
60W FM
70W FM
25
200
30
25
45
50
46
46
50
46
48
48.5
5.0x3.8x1.0
7.0x6.3x1.0
9.1x7.7x1.1
6.4x3.4x1.0
6.4x3.4x1.0
8.5x5.0x1.5
MOSFET
LDMOS
LDMOS
LDMOS
LDMOS
LDMOS
Note:
The product specifications listed here have been summarized in order to fit the format
of this brochure.
Cell Band Modules
Start
(MHz)
Stop
(MHz)
Modulated
Power
(Watt)
Calc.
P1dB
(Watt)
Gain
(dB)
7044
7039
7041
7040
7016
7029
7046
7017
7007
7021
3077
PCM3R3S7M
PCM3Q4AAL
PCM3Q4AAL
PCM3Q4AAL
PCM3Q4AFQ
PCM3Q4ACL
PCM3Q4AEM
PCM3Q4AFQ
PCM3Q4AAM
PCM3Q4AHM
GCM3J4BNQ
850
850
935
869
869
800
935
935
800
800
450
870
870
960
894
894
960
960
960
1000
1000
1050
5W CDMA
10W CDMA
10W CDMA
10W CDMA
30W CDMA
12W FM
4W CDMA
40W GSM
8W FM
50W FM
200W FM
25
50
50
50
300
12
25
80
8
50
200
46
59
44
44
54
44
46
54
44
46
54
Dimensions
(Inch)
Individual product datasheets with much more detail can be found on our website
www.EmpowerRF.com
Device
Type
5.0x3.8x1.0 LDMOS
6.4x3.4x1.1 LDMOS
6.4x3.4x1.0 LDMOS
6.4x3.4x1.1 LDMOS
7.6x8.1x1.1 LDMOS
5.7x2.4x0.87 LDMOS
5.0x3.8x1.0 LDMOS
8.1x6.7x1.1 LDMOS
5.7x2.4x0.87 GaAsFET
6.4x3.4x1.1 LDMOS
9.0x8.0x1.5 LDMOS
Standard Module Feature Set
Reverse polarity protection
Over-voltage and power spike protection
Temperature protection
Temperature monitoring
Current limit
Current monitoring
Overdrive protection
Graceful degradation (temp, VSWR, Pout and overdrive simultaneously)
High Cell Band Modules
Model
Stop
(MHz)
Modulated
Power
(Watt)
Calc.
P1dB
(Watt)
Gain
(dB)
Dimensions
(Inch)
Device
Type
1800
1930
1930
1860
1990
1990
30W CDMA
30W CDMA
30W CDMA
200
200
300
50
50
50
6.7x8.1x1.1
6.7x8.1x1.1
9.1x7.7x1.1
LDMOS
LDMOS
GaAsFET
10
For complete specifications on these standard models
and access to information from our extensive library of over 400 amplifier designs,
visit www.EmpowerRF.com
11
Additional Features ¬
7008 PCM4Q4SDO
7010 PCM4S5ADO
7062 PCM4Q5AFO
Start
(MHz)
Standard Options ¬
Model
Products ¬
SKU
SKU
Markets ¬
www.EmpowerRF.com
TETRA Band Modules
Products
Introduction ¬
Amplifier
Amplifier Systems
Products
For complete specifications on these standard models
and access to information from our extensive library of over 400 amplifier designs,
visit www.EmpowerRF.com
Most Popular Models
Introduction ¬
Amplifier
Systems from 10 kHz to 520 MHz
Stop
(MHz)
Psat
(Watt)
Gain
(dB)
Dimensions
Device
Type
4054
2073
4060
2087
2061
2013
2005
2036
2095
4010
2075
2126
2074
GCS1D2GYV
BBS1C3CUT
GCS3D3EZY
BBS0A3EVT
BBS0D3FAJ
BBS0D3FHM
BBS0A3FKO
BBS0A3FOQ
BBS0D3FUT
GCS3I3JUT
BBS0A3KEL
BBS2E3KUT
BBS3C3KUT
1.5
1
183
0.01
0.15
0.15
0.01
0.01
0.15
400
0.01
20
100
31.5
100
189
200
230
230
230
230
230
450
500
500
500
2500
1000
3000
1200
10
50
100
250
1000
1000
25
1000
1000
64
60
73
60
40
46
50
54
60
60
44
60
60
R5U+R3U
R5U
R5U+R3U
C19U
B2U
R2U
R3U
R5U
C19U
R5U
R2U
R5U+R3U
R5U+R3U
MOSFET
MOSFET
LDMOS
MOSFET
MOSFET
MOSFET
MOSFET
MOSFET
MOSFET
MOSFET
MOSFET
MOSFET
MOSFET
Stop
(MHz)
Psat
(Watt)
Gain
(dB)
Dimensions
Device
Type
1000
1000
1000
1000
1000
1000
1000
1000
2
10
25
50
120
250
500
1000
34
40
44
46
52
52
56
60
B2U
B2U
B2U
R3U
R5U
R3U+R2U
C19U
R5U+3U
MOSFET
MOSFET
MOSFET
MOSFET
MOSFET
LDMOS
LDMOS
LDMOS
Systems up to 1000 MHz
SKU
Model
Start
(MHz)
2077
2082
2042
2023
2024
2133
2086
2066
BBS0D4A3E
BBS0K4AAJ
BBS1C4AEL
BBS1C4AHM
BBS1C4ALP
BBS3C4AOP
BBS2Q4ARR
BBS3K4AUT
0.15
0.5
1
1
1
100
80
500
12
Stop
(MHz)
Psat
(Watt)
Gain
(dB)
Dimensions
Device
Type
4018
4015
4058
4056
2142
4057
2135
2055
2001
2026
2025
2030
GCS4M4OUT
GCS4P4RUT
GCS4P4RXU
GCS4E4SQR
BBS4A5KRR
GCS4S5KUT
BBS3G7EHM
BBS3Q7E9I
BBS3Q7ECK
BBS3Q7EEL
BBS3Q7EHM
BBS3Q7EKO
1600
1750
1750
1200
1000
1900
300
800
800
800
800
800
1700
1850
1850
1900
2500
2500
3800
4200
4200
4200
4200
4200
1000
1000
2000
400
500
1000
50
8
13
25
50
80
60
60
62
56
56
60
48
38
42
44
46
50
C19U
C19U
C19U
R5U+R3U
R5U+R3U
C19U
R3U
B2U
B2U
R2U
R3U
R5U
GaN
GaN
GaN
GaN
GaN
MOSFET
GaAsFET
GaAsFET
GaAsFET
GaAsFET
GaAsFET
GaAsFET
Systems up to 6000 MHz
SKU
Model
Start
(MHz)
Stop
(MHz)
Psat
(Watt)
Gain
(dB)
Dimensions
Device
Type
2097
2092
2143
BBS5A8C3G
BBS5K8CAJ
BBS6A8CHM
2000
2500
3000
6000
6000
6000
2
10
50
34
40
47
B2U
R2U
R3U
GaAsFET
GaN
GaN
High Power Pulse Amplifiers
SKU
Model
Start
(MHz)
Stop
(MHz)
Pulse
Power
Duty
Cycle
Dimensions
Device
Type
4040
2134
2103
4046
6009
6012
GCS0C2CRR
BBS3E3KXU
BBS3E4AUT
GCS4A4DYV
MBS6C6KUT
MBS6C6KVI
0.1
240
200
1025
3100
3100
10
470
1000
1150
3500
3500
2000
2000
1000
2500
1000
1300
56
62
60
64
60
38
R5U
R5U+R3U
R5U+R3U
R5U
R3U
R3U
MOSFET
LDMOS
LDMOS
PULSE
PULSE
PULSE
13
Additional Features ¬
Start
(MHz)
Start
(MHz)
Standard Options ¬
Model
Model
Products ¬
SKU
SKU
Markets ¬
www.EmpowerRF.com
Systems up to 4200 MHz
Custom Engineering
Products
Introduction ¬
Amplifier
Customization Example
Driver and Control
High Power Devices
Octave Filters
Output Protection
Temperature Controlled Fans
Amplifier Design Consideration
Select Either
Manual or
Automatic
Linearization
Manual
gain control
1000 to 3000 MHz
Gain
Controlled
Driver Amp
Markets ¬
www.EmpowerRF.com
1000 to 3000 MHz
1200
1600
F/R
Monitor
2000
Thermal
protection
2500
3000 to 6000 MHz
Output
power detection
Transmit
Disable
Octave
filters
Automatic
level control
Test
Load
4000
6000
Monitor Point
Output
RF connector
Input over
drive protection
Products ¬
3000 to 6000 MHz
ALC Loop
RS232
Ethernet
Transmit Enable
LCD control function,
switching and
alarm/ control
AC Power Supply
RS422
Transmit
disable (mute)
Reverse
power protection
Supply
voltage protection
Full customization projects require
detailed performance specifications
and review of end application.
RS232
Ethernet
LCD control function,
switching and
alarm/ control
To individual
amplifiers
AC or DC power supply
(select to the voltage)
RS422
http://www.empowerrf.com/ident/
design_request_amplifier.php
14
15
Additional Features ¬
To help start that process, tell us
about your needs via our interactive
design questionnaire and Empower
experts will contact you to initiate a
preliminary design review:
Touch Screen
Monitor and Control
Standard Options ¬
Input
RF connector
System Chassis
Option Number
R2U
R3U
R5U
Bench Top 2U - 8.5”x3.5”x16”
021
Rack Mount 2U - 19”x3.5”x18”
022
Connectors
Rack Mount 3U - 19”x5.25”x22”
024
Option Number
Description
FCN
051
Front Panel Type-N
RCN
052
Rear Panel Type-N
Rack Mount 5U - 19”x8.75”x22”
026
Option Number
Description
HS0
071
Heatsink
HSF
072
Heatsink with built in fan(s)
VVA
073
Built in Gain Adjustment
SHD
074
Shutdown: F, M, S
Rack Mount Chassis Slides
FSP
053
RSP
054
027
061
System Option Packages
Opt09
FTB
077
TRA
078
RSD
079
DOP
080
STO
081
HSF
HSO
NIO
NTO
Picture
Description
B2U, FCN, FGA
B2U, RCN, FGA
R2U, FCN, FGA
R2U, RCN, FGA
R2U, FCN, LCD
R2U, RCN, LCD
R3U, FCN, FGA
R3U, RCN, FGA
R3U, FCN, LCD
Opt10
R3U, RCN, LCD
Opt11
Opt12
Opt13
Opt14
R4U, FCN, FGA
R4U, RCN, FGA
R4U, FCN, LCD
R4U, RCN, LCD
Opt15
Opt16
Opt17
Opt18
R5U, FCN, FGA
R5U, RCN, FGA
R5U, FCN, LCD
R5U, RCN, LCD
16
Front panel 10 turns manual gain adjustment.
Touchscreen digital display, including Fwd/Rev power
indication (dB or Watt scale), Gain adjustment, ALC Fast/
Slow, On/Off, Standby mode, Fault indication, Rear panel
HPIB IEEE-488.2 or Full duplex RS232 remote interface.
Note: Output power is lowered by 0.5 – 0.75 dB.
Rear panel interlock function - Shutdown
[F<1 µs; M<50 µs; S=50 µs to 50 ms]
Harmonics rejection low pass filter switch
Dual band switching - TTL
LCD
062
INT
063
LPS
DBS
064
065
RGA
066
Rear panel gain adjustment via 9-pin DSUB connector.
[0-5 volt external voltage source.]
ALC
TRS
067
068
Internal analog level control
Tx / Rx switch system
17
Additional Features ¬
Opt07
Opt08
076
Standard Options ¬
Opt03
Opt04
Opt05
Opt06
NIO
N-Type Female
Output Connector
N-Type Female
In/Out Connector
Feed-Thru Bracket
Heatsink Assembly with
T/R Switch
Reverse Shutdown Polarity
(TTL Hi - Enable)
Dual Output
SMA Female Right Angle
Output Connector
Cabinet 19U - 21.79”x33.53”x30.71”
FGA
Opt01
Opt02
075
Control Options
Option Number
C19U
Front Panel SMA-F
Sample Port
Rear Panel SMA-F
Sample Port
NTO
Products ¬
RMS
011
Description
Option Number
Description
ACA
031
100-240 VAC, Single Phase
ACB
032
180-260 VAC, Single Phase
ACC
033
208 VAC, 3-Phase
ACD
034
380 VAC, 3-Phase
DCA
041
12-15 VDC
DCB
042
24 VDC
DCC
043
28 VDC
DCD
044
32 VDC
DCE
045
48 VDC
DCF
046
18-36 VDC
Markets ¬
www.EmpowerRF.com
B2U
Picture
Modules Options
Introduction ¬
Standard Options – Systems and Modules
Supply Voltages
Reduced Weight Chassis
Introduction ¬
Added Functionality & Features
Designed for airborne applications, weight
reduction is achieved through novel design and
fabrication techniques that remove unnecessary
material yet retain mechanical strength.
Reduced Weight Module Chassis
Dual-Band Amplifiers
When more than one amplifier is required to cover
the frequency span, external RF switch boxes can
increase system losses due to the need for long RF
cables between the box and the amplifiers.
Products ¬
Ultralight System Chassis
Mounting two amplifiers in one system chassis
results in major savings since internal RF switching
creates short cable runs, and the added benefit in
system components (such as the DC power supply)
can be shared.
Markets ¬
We also employ the latest in heatsink technology
combining low weight with excellent thermal
transfer.
Standard Options ¬
Internal switching arrangement showing
shared DC power supply
18
19
Additional Features ¬
As appearing in Microwave Journal, Microwaves & RF, MPD and JED
Internally switched 0.8-6.0 GHz amplifier
Many Empower COTS modules can also be hardened for
the most severe operating conditions. In addition to our
normal design processes for ruggedized environments,
manufacturing and packaging enhancements can be implemented to insure maximum reliability and survivability in
extreme, high altitude applications.
Contact an Empower representative to learn more about
these modifications
Multi-Function, Small Form Factor
Module Designs
The Controller extends the capability of the amplifier to
control; T/R switches, sub-octave filters, system interlocks
and other miscellaneous internal and external features.
This function is especially useful when connecting to
several amplifiers because each amplifier can be individually addressed. The Ethernet connectors can be placed
in the front or rear panel according to your design requirements.
Multi-Function PA Module
20 – 1000 MHz
Size (inches) - 3.0 x 4.5 x 0.5
Fully integrated FWD and REV couplers and detectors
Onboard T/R switches and filtering
Internal DC-DC converters for battery operation
Advanced control functions and performance monitoring
High efficiency, Doherty designs
Latest GaN on SiC Technology
Harsh Environment
Packaging
Many of Empower’s standard
modules can be adapted to be
installed into an “All environment”
rated enclosure.
FINAL STAGE
GaN-SiC
RF
INPUT
DRIVER GAIN STAGES
0/90
0/90
Q
U
A
D
Q
U
A
D
90/0
90/0
FAST RF
BLANKING
CUSTOMER DEFINED
INTERFACE
DC PRIME POWER
BATTERY/VEHICLE
EMI
FILTER
T/C
DIGITAL CONTROL CCA
BIAS VOLTAGE SEQUENCE
RF MUTE / FAST BLANKING
T/R SWITCH CONTROL
TEMPERATURE MONITOR
AMPLIFIER COMPENSATION
FORWARD POWER MONITOR
REVERSE POWER MONITOR
AMPLIFIER FAULT / STATUS
HIGH EFFICIENCY
DC/DC
CONVERTER
DIGITAL
TEMP
SENSOR
FORWARD AVERAGE PWR
DUAL DIR
COUPLER
RECEIVE
TRU RMS POWER
DETECTORS
RECEIVE
PORT
REVERSE AVERAGE PWR
T/R SWITCH CONTROL
DIGITAL TEMP SENSOR
28 or 50VDC
Secondary Voltages
REVERSE POLARITY PROTECTION
TRANSIENT PROTECTION
OVER-CURRENT PROTECTION
VOLTAGE MONITORING
CURRENT LIMITING
21
T/R
SW
RF
OUTPUT
ANTENNA
Additional Features ¬
Flexible supply voltage
(AC or DC)
T/R Switch or dummy load
connection or test RF port
Remote control via RS422 or
RS232 or Ethernet or TTL
Variable temperature controlled
fans
Pole mounting kits
Contact an Empower representative to
help define your how your application
can be integrated into this enclosure.
TVA
Standard Options ¬
Options that have been integrated
into our harsh environment, systems
enclosure include:
20
Products ¬
All of the features available on the touchscreen are also
available on the wide range of external interfaces. Please
specify your amplifier control requirements at the time of
order.
Ethernet Connection
The Ethernet option builds on the strong features of the
LCD Controller and allows the end user to control the
amplifier over a LAN using any common Web browser.
Increasing demands for reductions in size and weight, and
ongoing requirements for higher levels of functionality
and overall efficiency are driving innovations in packaging
and amplifier design at the module level. Building on
device knowledge and integration expertise, Empower has
designed and delivered high performance, multi-function
modules which are integral building blocks in demanding
defense and commercial applications.
Markets ¬
www.EmpowerRF.com
LCD Controller
The LCD touch screen display and microprocessor is a
powerful tool that can be added to any Empower system.
The LCD controller allows easy, intuitive access to all the
monitoring and control functions of the amplifier, both
locally on the screen and remotely via RS422, RS232 or
Ethernet.
Introduction ¬
Advanced Systems Control
and User Interface
Application Notes on Module Use
Altitude and humidity can be a significant factor
in convective cooling system design. The
basis of convective cooling is the number of air
molecules passing the heatsink fins, so the lack
of air pressure (altitude) or presence of water
vapor (humidity) reduces the number of air
molecules per unit volume available to cool the
amplifier.
Usage and Implementation Tips from the Experts
Heat dissipation
Adequate electrical power availability
Chassis/earth ground
Controls and alarms
RF impedance matching
Cooling Requirements
Empower’s amplifiers rely on passive cooling
techniques due to their simplicity, reliability and
cost. When planning an amplifier implementation, consider the following cooling methods:
22
Derating
Factor
0 (sea level)
0
1,000
3,000
1,500
5,000
2,000
7,000
3,000
10,000
3,500
12,000
Altitude Derating Factors
1.00
0.95
0.90
0.86
0.80
0.75
Usually, shortcomings in heat dissipation can
be made up by selecting a larger and/or more
massive heatsink, a copper/aluminum heatsink,
and/or higher performance cooling fans. In
all cases, fans with the highest airflow volume
should be used that fit within the DC current
consumption budget. Keeping the amplifier(s)
as cool as possible also helps increase their
operating lifetime.
Empower amplifier modules have precision
internal temperature sensors with a real-time
temperature output in the 9-pin DSUB connector.
If failure of a cooling fan could cause a critical
system failure, the temperature sensor can be
used to control an external fan speed controller,
which helps increase fan life by moderating its
usage to periods of high heat.
Power Supply
Empower RF amplifiers typically utilize supply
voltages at 12 or 28 volts DC. In order to
prevent tripping the built-in over-voltage and
23
Additional decoupling techniques should be
employed as deemed fit by the system’s engineer.
Transmitter System Power-Up Sequence
The power amplifier should be the final RF
component to be powered-up in order to prevent
transients from damaging the amplifier, to
prevent RF transmission during the modulator or
exciter startup, and to prevent RF transmission
before the modulator has stabilized.
An amplifier in many applications can operate
in a burst style of RF transmission, where the
transition from idle use to max power can be
rapid. This will create a similar requirement on
the power supply system. If the supply cannot
supply the instantaneous current requirement, the
high power output devices get presented with a
transient half on state. This can both destabilize
the amplifier or damage the device due to a
biasing condition it was not designed for.
Good system design requires either batteries
or high value capacitors in the supply circuit.
Smoothing capacitors should also be mounted
close to the amplifier to prevent hum, ripple and
RF to be injected to the amplifier via the DC
supply circuit.
Additional Features ¬
In most cases the amplifiers are attached to their
heatsinks with screws. Empower amplifiers are
designed with multiple screw holes located in
precise bolt patterns to more easily allow them
to be fastened to their respective equipment.
Screws and other fasteners should be tightened to
the torque specification provided by the manufacturer to provide optimal clamping force without
danger of distortion of the heatsink or amplifier
chassis.
Altitude
(Feet)
Standard Options ¬
Convection/Radiation
In most amplifier systems, heat is conducted
from the amplifier directly into a finned heatsink,
where the thermal energy is radiated into the
ambient air, or a fan forces cool air into the
heatsink fins for convective cooling. This type
of cooling system is easy to design and its
mechanics are well understood.
Empower’s amplifier housings are
CNC-machined to provide the most precise
mating surfaces practicable, which gives greater
metal-to-metal contact and helps to transfer heat
away from the amplifier more efficiently. “The
Microscopic View” drawing (below) shows a
representation of the tiny peaks and valleys that
naturally occur on any surface. The air gap
between the two mated surfaces, though small,
can represent a significant thermal barrier. A
thin layer of thermal transfer compound applied
between the two surfaces helps to bridge the gap
and is an inexpensive way to improve cooling
efficiency.
Altitude
(Metres)
Products ¬
Conduction
This is when thermal energy moves through the
heatsinking material from hot to cold. It occurs
any time a temperature difference exists between
items in contact. Fastening amplifiers to a
sufficient mass of copper could be an effective
conduction cooling system. In any case, cooling
system designs based purely on conduction rely
on materials with excellent thermal conductivity and/or high specific heat. This can be as
simple as attaching the amplifier to a sufficiently
massive bulkhead or as complex as a system of
heat pipes and heat exchangers.
The following table can be used as a preliminary
guideline for heatsink sizing on amplifiers that
will see altitude extremes:
Power Supply Impedance
A power supply with the lowest impedance
should be selected, as higher impedance power
supplies introduce additional unwanted noise
to the system. Under dynamic loading, a
sudden high-current demand from the amplifier
could cause a high-impedance power supply to
introduce enough noise to appear as an intermittent problem.
Markets ¬
www.EmpowerRF.com
Important Considerations to Amplifier Integration:
over-current shutdown routines, DC power
supplies should utilize circuitry to protect against
voltage spikes, and should be held to 150 mV
peak-to-peak ripple (12/28 volt systems ±1%
voltage tolerance).
Introduction ¬
Designing for the Environment
Introduction ¬
Chassis Earth/Grounding
Markets ¬
Empower amplifier products require a
low-impedance path to electrical ground as with
any electrical equipment. Keeping the amplifier
at the same ground potential as other connected
equipment is a consideration in ground system
design, but also consider that the amplifier may
eventually be connected to an external antenna,
which could present a significant electrical
shock hazard due to lightning strike. A properly
designed ground system minimizes hazards
from lightning strike, transient energy delivered
via the AC power transmission lines, and other
shock hazards due to other electrical wiring
faults.
RF Matching
Empower amplifiers are highly tolerant to
impedance mismatch; however, a 50 ohm load
will transfer RF power most efficiently.
Products ¬
Control Circuit Design
Amplifier internal controls and monitoring
can be accessed via a 9-pin DSUB connector
located on the side of the amplifier chassis.
Typical functions available are real-time current
consumption, real-time operating temperature,
gain control and RF mute.
Heatsink flatness
Thermal transfer compound
As appearing in Microwave Journal, Microwaves & RF and Microwave Product Digest
24
25
Unit
0.012 inch per foot
Silicone-free synthetic grease, e.g.
Sil-Free™ 1020
Apply as thinly as possible
Per manufacturer specifications
100
As low as possible
As low as possible
See datasheet (typical 60°C)
in
N-m
µs
Ohm
Ohm
°C
Additional Features ¬
Thermal compound thickness
Heatsink mounting screw torque
Power-up delay
Ground impedance
Power supply impedance
“Amplifier case” max temperature
Value
Standard Options ¬
Parameter
Technical Reference Material
Explanation of Terms
Start Frequency
The frequency where the amplifier’s low end
response is tuned to 1 dB roll off.
The frequency where the amplifier’s high end
response is tuned to 1 dB roll off.
Bandwidth (BW)
The frequency range covered between the start
and stop frequencies.
Power Output PCW (Watts)
Measurement Units for
Power and Gain
Microwave amplifier power output is commonly
rated in dBm, or decibels relative to one milliwatt (0 dBm = 1 mW) See the table below.
Example:
+10 dBm
+ 20 dBm
+ 30 dBm
+ 50 dBm
Gain
P1dB
The difference between the maximum and minimum gain is the gain across the bandwidth (BW)
of the amplifier at a constant ambient temperature, as measured below the 1dB compression
point (P1dB). It can be written as xx dB peak to
peak or ± xx/2 dB.
Example:
High gain 33 dB, low gain 30 dB. The gain flatness will be (33-30)/2 = ±1.5 dB.
Minimum Gain
Amplifier output is commonly rated at the point
where its gain is compressed by 1 dB, or P1dB.
In the linear region the output power is the sum
of the input power and the gain (= 0 dBm, Gain
20 dB, +20 dBm). As input power increases,
the output power will increase proportionately
until the difference between the small signal
gain to the actual gain is 1 dB. When selecting
an amplifier, consider that most communication
systems are operated 7 to 10 dB below P1dB.
At the stated power output (Pm) and frequency
(f1) the harmonics (2f, 3f, 4f) will be below the
carrier by the stated amount.
Spurious signals Spur (dBc)
Any signal which comes out of an amplifier
other than the desired signal. The spurious emissions include harmonics and out of band mixed
products.
Operating Voltage VDD
The voltage required to be supplied to the module to meet the specified output specifications.
The gain specified in this catalog is minimum
gain, which is defined as the lowest gain point in
the amplifier’s operating frequency range. Gain
is measured at +25°C unless otherwise specified.
Input level Pin (dBm)
Gain Variation Over Temperature
Crest factor
Operating Case Temperature
Crest factor (CF) is the ratio of the peak and
average power in dB. This is the most important
measurement as communication systems move
into the digital age. For CDMA and similar
modulation types the CF may reach 10 dB. If the
crest factor is too large, the transmitter will not
be able to handle the peak powers and amplitude
distortion will occur. Crest factor can also reflect
overdrive and overshoot problems. Knowing
the CF allows designers to more accurately set
amplifier power and lower operating costs.
This is stated for heatsink design purposes, the
power consumed (VDD x IDD) must be dissipated by the heatsink so the case temperature is
maintained below the specified value.
Thermal Overload
Temperature Compensated Amplifier
CCDF
In order to compensate for excess gain at low
temperatures, and gain loss at high temperatures,
a temperature compensated-amplifier can be
made. This amplifier will have a built-in PINbased attenuator stage, which reserves gain at
lower temperatures and releases gain at higher
CCDF is the amount of time the power is above
a threshold. CCDF indicates the health of a power amplifier and its ability to sustain rated power
over an appropriate timeframe. This is most applicable in pre-distortion amplifier systems.
Overdriving the amplifier within the range stated
will not cause damage.
In some applications the temperature range may
change from -54° to +85°C or -20° to +70°C.
Gain will typically drop at higher operating temperatures; as a general rule of thumb the amplifier loses 0.015 dB/stage/ °C.
The gain variation over temperature of
a standard four stage amplifier will be
-0.015*4*(20+70) = -5.4 dB from -20 to +70 °C.
This gain variation over temperature (gain var.
OT or VS temp) can be written as -5.4 dB p-p or
±2.7 dB.
26
Generally speaking, Empower’s amplifier power
output is achieved with 0 dBm input power or
drive level.
27
Supply Current IDD
This is the steady state supply current at the
rated RF output Power at room temperature.
Circuitry is integrated into all Empower amplifiers to ensure they do not operate beyond their
safe rated temperature. In over-temperature situations the amplifier shuts down (usually 85°C).
Input Over drive
Additional Features ¬
Gain is defined as the ratio of input to output
power in dB. An amplifier taking a 10 mW (10
dBm) input, and providing 1 watt (30 dBm) output has a gain of 20 dB.
Example: A low noise amp (30 dB gain) is
cascaded with a driver amp (20 dB gain) and a
power amp (10 dB gain). The total gain will be
30+20+10 = 60 dB.
Small Signal Gain Variance ΔG (dB)
Harmonics H (dBc)
Standard Options ¬
Power
10 mW
100 mW
1000 mW
100 W
As with any electrical component, an amplifier
introduces some noise, and is rated in dB. Noise
figure is rated at 25°C unless otherwise noted.
Products ¬
This is commonly stated as the CW power
output. The modulated power output is re-rated
according to the crest factor of a specified modulation scheme to maintain linearity.
Gain is measured at +25°C unless otherwise
specified.
Empower amplifiers are designed to operate in an
environment with poor RF impedance matching.
However, a poor match will increase heat and
reduce operating efficiency.
Markets ¬
www.EmpowerRF.com
Stop Frequency
Noise Figure
Input Return Loss (S11)
Introduction ¬
temperatures. The result is an amplifier with
tighter gain control over specified frequency and
temperature ranges.
Empower RF Systems, Inc. ¬
As appearing in Microwave Journal, Microwaves & RF, MPD and JED
© 2010 Rev. 02/2010
As appearing in Microwave Journal, Microwaves & RF and Microwave Product Digest
© 2010 Rev. 03/2010