T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Applications
•
•
•
•
•
•
Military radar
Civilian radar
Professional and military radio communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers
Product Features
•
•
•
•
•
Functional Block Diagram
Frequency: DC to 6 GHz
Output Power (P3dB): 42.7 W at 3 GHz
Linear Gain: >14 dB at 3 GHz
Operating Voltage: 28 V
Low thermal resistance package
General Description
Pin Configuration
The Qorvo T2G6003028-FL is a 30W (P3dB) discrete GaN
on SiC HEMT which operates from DC to 6 GHz. The
device is constructed with Qorvo’s proven QGaN25
process, which features advanced field plate techniques
to optimize power and efficiency at high drain bias
operating conditions. This optimization can potentially
lower system costs in terms of fewer amplifier line-ups
and lower thermal management costs.
Pin No.
Label
1
2
Flange
VD / RF OUT
VG / RF IN
Source
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Ordering Information
Datasheet: Rev B 02-01-16
© 2016 Qorvo
Part
ECCN
Description
T2G6003028-FS
EAR99
Packaged part
Flangeless
T2G6003028-FSEAR99
EVB1
5.4 – 5.9 GHz
Evaluation Board
T2G6003028-FSEAR99
EVB2
1.3 – 1.9 GHz
Evaluation Board
- 1 of 21 -
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T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Absolute Maximum Ratings
Recommended OperatingConditions(1)
Parameter
Parameter
Breakdown Voltage (BVDG)
Gate Voltage Range (VG)
Drain Current (ID)
Gate Current (IG)
Power Dissipation (PD)
Value
100 V
-7 to 0 V
5.5 A
-10 to 28 mA
47.5 W
RF Input Power, CW,
T = 25°C (PIN)
40 dBm
Channel Temperature (TCH)
275 °C
Mounting Temperature
(30 Seconds)
320 °C
Storage Temperature
Value
Drain Voltage (VD)
Drain Quiescent Current (IDQ)
Peak Drain Current ( ID)
Gate Voltage (VG)
Channel Temperature (TCH)
Power Dissipation, CW (PD)
Power Dissipation, Pulse (PD) (2)
1.
2.
12 - 40 V
200 mA (Typ.)
1.7 A (Typ.)
-3.3 V (Typ.)
225 °C (Max)
35 W (Max)
40 W (Max)
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Pulse Width = 380 uS, Duty Cycle = 50%
-40 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
RF Characterization – Optimum Power Tuned Load Pull Performance
Test conditions unless otherwise noted: T = 25°C.
Parameter
Frequency (F)
Drain Voltage (VD)
Bias Current (IDQ)
Output P3dB (P3dB)
PAE @ P3dB (PAE3dB)
Gain @ P3dB (G3dB)
Typical Value
1
28
200
45.7
64.9
19.9
2
28
200
46
64.2
15.7
3
28
200
46.3
68.1
11.3
4
28
200
46.5
54.6
10.1
Units
5
28
200
46.8
55.9
10.7
6
28
200
46.2
54.7
12.1
GHz
V
mA
dBm
%
dB
Notes:
1. Vd = 28 V, Idq = 200 mA, Pulse Width = 100 uS, Duty Cycle = 20%
2. Characteristic Impedance (Zo) = 10 Ω. See pg. 18 for Load Pull Reference Planes.
RF Characterization – Optimum Efficiency Tune Load Pull Performance
Test conditions unless otherwise noted: T = 25°C.
Parameter
Frequency (F)
Drain Voltage (VD)
Bias Current (IDQ)
Output P3dB (P3dB)
PAE @ P3dB (PAE3dB)
Gain @ P3dB (G3dB)
Typical Value
1
28
200
43.1
73
19.7
2
28
200
43.1
76
16.2
3
28
200
44.6
46.1
11.7
4
28
200
44.1
65.1
10.8
Units
5
28
200
44.9
69.5
12.4
6
28
200
45.7
60
12.9
GHz
V
mA
dBm
%
dB
Notes:
1. Vd = 28 V, Idq = 200 mA, Pulse Width = 100 uS, Duty Cycle = 20%.
2. Characteristic Impedance (Zo) = 10 Ω. See pg. 18 for Load Pull Reference Planes.
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 2 of 21 -
Disclaimer: Subject to change without notice
www.qorvo.com
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
RF Characterization – Performance at 5.6 GHz (1, 2)
Symbol Parameter
GLIN
P3dB
DE3dB
G3dB
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
Min
Typical
Max
Units
12.0
43.0
45.0
9.0
14.0
44.6
54.0
11.0
17.0
46.0
70.0
14.0
dB
dBm
%
dB
Notes:
1. Performance at 5.6 GHz in the 5.4 to 5.9 GHz Evaluation Board
2. VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%
RF Characterization – Mismatch Ruggedness at 5.6 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 200 mA
Symbol Parameter
VSWR
Typical
Impedance Mismatch Ruggedness
10:1
Notes:
1. P1dB CW Input Power under matched condition.
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 3 of 21 -
Disclaimer: Subject to change without notice
www.qorvo.com
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Thermal and Reliability - CW (1)
Parameter
Thermal Resistance, θJC
Maximum Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Maximum Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Maximum Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Maximum Channel Temperature, TCH
Median Lifetime, TM
Test Conditions
PD = 30 W, Tbase = 85°C
PD = 35 W, Tbase = 85°C
PD = 40 W, Tbase = 85°C
PD = 45 W, Tbase = 85°C
Value
Units
3.82
200
1.54E7
4.01
225
1.80E6
4.22
254
1.93E5
4.43
284
2.41E4
°C/W
°C
Hrs
°C/W
°C
Hrs
°C/W
°C
Hrs
°C/W
°C
Hrs
Value
Units
2.33
178
2.52E9
2.43
182
8.60E8
2.68
192
1.65E8
3.18
212
1.10E7
°C/W
°C
Hrs
°C/W
°C
Hrs
°C/W
°C
Hrs
°C/W
°C
Hrs
Notes:
1. Thermal resistance calculated to bottom of package.
Thermal and Reliability - Pulsed (1)
Parameter
Thermal Resistance, θJC
Peak Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Peak Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Peak Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Peak Channel Temperature, TCH
Median Lifetime, TM
Test Conditions
PD = 40 W, Tbase = 85°C
Pulse Width = 100 uS
Duty Cycle = 5%
PD = 40 W, Tbase = 85°C
Pulse Width = 100 uS
Duty Cycle = 10%
PD = 40 W, Tbase = 85°C
Pulse Width = 100 uS
Duty Cycle = 20%
PD = 40 W, Tbase = 85°C
Pulse Width = 100 uS
Duty Cycle = 50%
Notes:
2. Thermal resistance calculated to bottom of package.
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 4 of 21 -
Disclaimer: Subject to change without notice
www.qorvo.com
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Median Lifetime
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 5 of 21 -
Disclaimer: Subject to change without notice
www.qorvo.com
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Maximum Channel Temperature
Peak Channel Temperature
Tbase = 85oC, Pdiss = 40 W (4.0 W/mm)
260
250
5% Duty Cycle
10% Duty Cycle
240
Peak Channel Temperature (oC)
230
20% Duty Cycle
50% Duty Cycle
220
210
200
190
180
170
160
150
140
130
120
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
Pulse Width (sec)
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 6 of 21 -
Disclaimer: Subject to change without notice
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T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2, 3)
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 200 mA
2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. See pg. 18 for load pull reference planes.
1GHz, Load-pull
• Max Power is 45.7dBm
at Z = 8.696-2.126iΩ
Γ = -0.0561-0.1201i
• Max Gain is 22.8dB
at Z = 4.451+3.146i Ω
Γ = -0.3213+0.2877i
• Max PAE is 73%
at Z = 12.703+1.76i Ω
Γ = 0.1243+0.0679i
Zs(fo) = 1.89+3.07i Ω
22.4
22.1
21.8
70.6
2
1.8
1.6
1.4
1.2
66.6
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
68.6
45.6
45.4
45.2
Zo = 10Ω
3dB Compression Referenced to Peak Gain
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 7 of 21 -
Power
Gain
PAE
Disclaimer: Subject to change without notice
www.qorvo.com
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 200 mA
2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. See pg. 18 for load pull reference planes.
2GHz, Load-pull
• Max Power is 46dBm
at Z = 3.96+1.293i Ω
Γ = -0.4205+0.1315i
• Max Gain is 16.3dB
at Z = 4.839+4.569i Ω
Γ = -0.2311+0.379i
• Max PAE is 76%
at Z = 5.745+6.305i Ω
Γ = -0.0947+0.4384i
Zs(fo) = 2.2-0.59iΩ
75.6
16.2
15.9
73.6
15.6
71.6
5
4
3
2
1.8
1.6
1.4
1.2
1
0.9
0.8
0.7
45.8
0.6
0.5
0.4
0.3
46
45.6
Zo = 10Ω
3dB Compression Referenced to Peak Gain
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 8 of 21 -
Power
Gain
PAE
Disclaimer: Subject to change without notice
www.qorvo.com
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 200 mA
2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. See pg. 18 for load pull reference planes.
3GHz, Load-pull
2
1.8
1.6
1
0.9
0.8
0.7
74.2
0.6
0.5
11.7
0.4
0.3
0.2
11.1 11.4
1.4
Zs(fo) = 5.66-4.31i Ω
1.2
• Max Power is 46.3dBm
at Z = 4.75-2.265iΩ
Γ = -0.3247-0.2034i
• Max Gain is 11.9dB
at Z = 6.766+2.282i Ω
Γ = -0.1712+0.1594i
• Max PAE is 76%
at Z = 4.561+0.757i Ω
Γ = -0.3698+0.0712i
72.2
70.2
46.3
46.1
45.9
Zo = 10Ω
3dB Compression Referenced to Peak Gain
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 9 of 21 -
Power
Gain
PAE
Disclaimer: Subject to change without notice
www.qorvo.com
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 200 mA
2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3.See pg. 18 for load pull reference planes.
4GHz, Load-pull
5
4
2
1.8
1.6
1.4
1.2
1
0.9
0.8
0.7
0.6
0.5
0.4
Zs(fo) = 9.81-12.52i Ω
3
• Max Power is 46.5dBm
at Z = 5.19-7.461i Ω
Γ = -0.0607-0.521i
• Max Gain is 12dB
at Z = 4.766-1.577i Ω
Γ = -0.3392-0.143i
• Max PAE is 65.1%
at Z = 3.107-3.202i Ω
Γ = -0.4399-0.3518i
12 11.7
11.4
61
63
65
46
46.2
46.4
Zo = 10Ω
3dB Compression Referenced to Peak Gain
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 10 of 21 -
Power
Gain
PAE
Disclaimer: Subject to change without notice
www.qorvo.com
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 200 mA
2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. See pg. 18 for load pull reference planes.
5GHz, Load-pull
3
2
1.6
1.4
1.2
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Zs(fo) = 15.43-11.56i Ω
1.8
• Max Power is 46.8dBm
at Z = 6.608-11.147i Ω
Γ = 0.1697-0.5572i
• Max Gain is 12.6dB
at Z = 3.707-4.914i Ω
Γ = -0.2929-0.4635i
• Max PAE is 69.6%
at Z = 4.332-6.284i Ω
Γ = -0.1705-0.5132i
11.8
12.1
12.4
65.1
67.1
69.1
Zo = 10Ω
3dB Compression Referenced to Peak Gain
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 11 of 21 -
46.3
46.5
46.7
Power
Gain
PAE
Disclaimer: Subject to change without notice
www.qorvo.com
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 200 mA
2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. See pg. 18 for load pull reference planes.
6GHz, Load-pull
4
3
1.8
1.6
45.8
12.5
55
12.8
13.1
57
59
Zo = 10Ω
3dB Compression Referenced to Peak Gain
Datasheet: Rev B 02-01-16
© 2016 Qorvo
1.4
1.2
1
0.9
0.8
0.7
0.6
0.5
0.4
Zs(fo) = 7.65-2.21i Ω
2
• Max Power is 46.2dBm
at Z = 5.156-12.275iΩ
Γ = 0.2031-0.6454i
• Max Gain is 13.2dB
at Z = 3.595-8.101i Ω
Γ = -0.0856-0.6469i
• Max PAE is 60%
at Z = 4.764-10.203iΩ
Γ = 0.0832-0.6336i
- 12 of 21 -
46
46.2
Power
Gain
PAE
Disclaimer: Subject to change without notice
www.qorvo.com
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Characterization Drive-up (1, 2)
Vd = 28 V, Idq = 200 mA, Pulse Width = 100 uS, Duty Cycle = 20%
NaN means the parameter is either unavailable or undefined.
Gain [dB]
24
23
100
Gain
90
PAE
80
27
25
70
24
60
23
22
50
21
40
20
60
50
21
40
30
20
30
19
20
19
20
18
10
18
10
17
31
32
T2G6003028 - Gain and PAE vs. Output Power
2 GHz - Power Tuned
23
Zs-fo = 2.2-0.59iΩ
20
Zl-fo = 3.96+1.293iΩ
Zl-2fo = NaNΩ
Zl-3fo = NaNΩ
33
34
35
36 37 38 39 40
Output Power [dBm]
41
42
43
0
44
T2G6003028 - Gain and PAE vs. Output Power
2 GHz - Efficiency Tuned
100
22 Zs-2fo = NaNΩ
21 Zs-3fo = NaNΩ
23
Gain
90
PAE
80
100
Gain
90
PAE
80
Zs-fo = 2.2-0.59iΩ
22 Zs-2fo = NaNΩ
Zs-3fo = NaNΩ
21 Zl-fo = 5.745+6.305iΩ
Zl-2fo = NaNΩ
70
20 Zl-3fo = NaNΩ
19
70
18
50
60
18
50
17
40
17
40
16
30
16
30
15
20
15
20
14
10
14
10
Gain [dB]
19
PAE [%]
Gain [dB]
70
22
17
0
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
Output Power [dBm]
13
0
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
13
31
32
T2G6003028 - Gain and PAE vs. Output Power
3 GHz - Power Tuned
18
Zs-fo = 5.66-4.31iΩ
17 Zs-2fo = NaNΩ
Zs-3fo = NaNΩ
16 Zl-fo = 4.75-2.265iΩ
15 Zl-2fo = NaNΩ
33
60
34
35
36 37 38 39 40
Output Power [dBm]
41
42
43
0
44
T2G6003028 - Gain and PAE vs. Output Power
3 GHz - Efficiency Tuned
100
Gain
90
PAE
80
18
100
Gain
90
PAE
80
17
16
60
14
13
50
12
40
11
30
11
10
20
10
20
9
10
9
10
8
0
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
Datasheet: Rev B 02-01-16
© 2016 Qorvo
Gain [dB]
15
14
PAE [%]
70
Zl-3fo = NaNΩ
Gain [dB]
100
Gain
90
PAE
80
Zs-fo = 1.89+3.07iΩ
Zs-2fo = NaNΩ
Zs-3fo = NaNΩ
Zl-fo = 12.703+1.76iΩ
Zl-2fo = NaNΩ
Zl-3fo = NaNΩ
26
PAE [%]
25
Zs-fo = 1.89+3.07iΩ
Zs-2fo = NaNΩ
Zs-3fo = NaNΩ
Zl-fo = 8.696-2.126iΩ
Zl-2fo = NaNΩ
Zl-3fo = NaNΩ
Gain [dB]
26
PAE [%]
27
T2G6003028 - Gain and PAE vs. Output Power
1 GHz - Efficiency Tuned
PAE [%]
T2G6003028 - Gain and PAE vs. Output Power
1 GHz - Power Tuned
13
12
8
32
- 13 of 21 -
70
60
Zs-fo = 5.66-4.31iΩ
Zs-2fo = NaNΩ
Zs-3fo = NaNΩ
Zl-fo = 4.561+0.757iΩ
Zl-2fo = NaNΩ
Zl-3fo = NaNΩ
33
34
35
36
50
40
PAE [%]
1.
2.
30
37 38 39 40 41
Output Power [dBm]
42
43
44
0
45
Disclaimer: Subject to change without notice
www.qorvo.com
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Characterization Drive-up (1, 2)
Vd = 28 V, Idq = 200 mA, Pulse Width = 100 uS, Duty Cycle = 20%
NaN means the parameter is either unavailable or undefined.
T2G6003028 - Gain and PAE vs. Output Power
4 GHz - Power Tuned
14
70
13
12
60
12
10
9
Zs-fo = 9.81-12.52iΩ
Zs-2fo = NaNΩ
Zs-3fo = NaNΩ
Zl-fo = 5.19-7.461iΩ
Zl-2fo = NaNΩ
Zl-3fo = NaNΩ
50
40
Gain [dB]
13
11
100
Gain
90
PAE
80
15
PAE [%]
Gain [dB]
14
16
11
10
50
40
9
30
8
20
8
20
7
10
7
10
6
32
33
T2G6003028 - Gain and PAE vs. Output Power
5 GHz - Power Tuned
17
34
35
36
15
14
70
14 Zs-2fo = NaNΩ
60
13 Zl-fo = 4.332-6.284iΩ
15
Gain [dB]
50
43
44
0
45
100
Gain
90
PAE
80
16
PAE [%]
12
Zs-fo = 15.43-11.56iΩ
Zs-2fo = NaNΩ
Zs-3fo = NaNΩ
Zl-fo = 6.608-11.147iΩ
Zl-2fo = NaNΩ
Zl-3fo = NaNΩ
42
17
Gain
90
PAE
80
13
37 38 39 40 41
Output Power [dBm]
T2G6003028 - Gain and PAE vs. Output Power
5 GHz - Efficiency Tuned
100
16
Gain [dB]
60
30
6
0
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
Zs-fo = 15.43-11.56iΩ
70
Zs-3fo = NaNΩ
60
Zl-2fo = NaNΩ
12 Zl-3fo = NaNΩ
11
50
30
10
30
9
20
9
20
8
10
8
10
11
10
40
7
0
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
7
33
19
Zs-fo = 7.65-2.21iΩ
18 Zs-2fo = NaNΩ
Zs-3fo = NaNΩ
17 Zl-fo = 5.156-12.275iΩ
Zl-2fo = NaNΩ
16 Zl-3fo = NaNΩ
34
35
36
40
37
38 39 40 41 42
Output Power [dBm]
43
44
45
0
46
T2G6003028 - Gain and PAE vs. Output Power
6 GHz - Efficiency Tuned
T2G6003028 - Gain and PAE vs. Output Power
6 GHz - Power Tuned
19
100
Gain
90
PAE
80
100
Gain
90
PAE
80
18
17
16
15
60
15
14
50
13
40
12
30
12
11
20
11
20
10
10
10
10
9
0
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
Datasheet: Rev B 02-01-16
© 2016 Qorvo
Gain [dB]
70
PAE [%]
Gain [dB]
70
Zs-fo = 9.81-12.52iΩ
Zs-2fo = NaNΩ
Zs-3fo = NaNΩ
Zl-fo = 3.107-3.202iΩ
Zl-2fo = NaNΩ
Zl-3fo = NaNΩ
PAE [%]
100
Gain
90
PAE
80
15
PAE [%]
16
T2G6003028 - Gain and PAE vs. Output Power
4 GHz - Efficiency Tuned
14
13
70
Zs-fo = 7.65-2.21iΩ
Zs-2fo = NaNΩ
Zs-3fo = NaNΩ
Zl-fo = 4.764-10.203iΩ
Zl-2fo = NaNΩ
Zl-3fo = NaNΩ
60
50
40
PAE [%]
1.
2.
30
9
0
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
Output Power [dBm]
- 14 of 21 -
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T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Performance Over Temperature (1, 2)
Performance measured in Qorvo’s 5.4 GHz to 5.9 GHz Evaluation Board at 3 dB compression.
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 200 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 15 of 21 -
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T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Evaluation Board Performance (1, 2)
Performance at 3 dB Compression
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 200 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %
Application Circuit
Bias-up Procedure
Bias-down Procedure
Set gate voltage (VG) to -5.0V.
Turn off RF signal.
Set drain current (ID) limit to 220 mA.
Set drain voltage (VD) to 28 V.
Turn off VD and wait 1 second to allow drain capacitor
discharge.
Slowly increase VG until quiescent ID is 200 mA.
Turn off VG.
Set drain current (ID) to 2.8 A.
Apply RF signal.
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 16 of 21 -
Disclaimer: Subject to change without notice
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T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Evaluation Board Layout
Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized
assembly at Qorvo Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
Bill of Materials
Reference Design
Value
Qty
Manufacturer
Part Number
C1
C2
L1, L2
C3, C4, C6, C7, C8
C5
R1
R2
R3
R4
C9, C10
C11, C12
C13, C14
C15
C16
L3
0.3 pF
0.2 pF
8.8 NH
3 pF
0.4 pF
97.6 Ohms
4.7 Ohms
330 Ohms
50 Ohms
220 pF
2200 pF
22000 pF
220 uF
1.0 uF
48 Ohm
1
1
2
5
1
1
1
1
1
2
2
2
1
1
1
ATC
ATC
COILCRAFT
ATC
ATC
Venkel
Newark
Newark
ATC
AVX
Vitramon
Vitramon
United Chemi-Con
Allied
Ferrite, Laird Tech.
ATC600S0R3
ATC600S0R2
1606-8
ATC600S3R0
ATC600S0R5
CR0604-16w-97R6FT
37C0064
TNPW1206330RBT9ET1-E3
CRCW120651R0FKEA
AVX06035C22KAT2A
VJ1206Y222KXA
VJ1206Y223KXA
EMVY500ADA221MJA0G
541-1231
28F0121-0SR-10
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 17 of 21 -
Disclaimer: Subject to change without notice
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T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Reference Planes
Pin Layout
Note:
The T2G6003028-FL will be marked with the “30282” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot
start, and the “ZZZ” is an auto-generated number.
Pin Description
Pin
Symbol
Description
1
VD / RF OUT
Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 17 as an
example.
2
VG / RF IN
Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 17 as an
example.
3
Flange
Source connected to ground; see EVB Layout on page 17 as an example.
Notes:
Thermal resistance measured to bottom of package
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 18 of 21 -
Disclaimer: Subject to change without notice
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T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Mechanical Information
All dimensions are in millimeters.
Note:
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 19 of 21 -
Disclaimer: Subject to change without notice
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T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Product Compliance Information
ESD Sensitivity Ratings
Caution! ESD-Sensitive Device
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260° C
RoHs Compliance
ESD Rating:
Value:
Test:
Standard:
Class 1A
Passes ≥ 250 V to < 500 V max.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
MSL Rating
• Antimony Free
• TBBP-A (C15H12Br402) Free
Level 3 at +260 °C convection reflow
• PFOS Free
The part is rated Moisture Sensitivity Level 3 at 260°C per
• SVHC Free
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce EAR99
Recommended Soldering Temperature Profile
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 20 of 21 -
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T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about Qorvo:
Web: www.qorvo.com
Email: info-sales@qorvo.com Fax:
Tel:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@qorvo.com
Important Notice
The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information
contained herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein.
Qorvo assumes no responsibility or liability whatsoever for the use of the information contained herein. The information
contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information
is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain
and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or
any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other
intellectual property rights, whether with regard to such information itself or anything described by such information.
Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death.
Datasheet: Rev B 02-01-16
© 2016 Qorvo
- 21 of 21 -
Disclaimer: Subject to change without notice
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