Technical Explanation
MiniSKiiP
Generation II
®
Revision:
4.2
Issue date:
2016-07-20
Prepared by:
Thomas Hürtgen
Approved by:
Stefan Hopfe
Keyword: MiniSKiiP, spring, topology, 600V, 1200V, 1700V,
board, pressure lid, order code
Table of Contents
1. Introduction ...............................................................................................................................3
1.1 Key Features ........................................................................................................................3
1.2 Advantages ..........................................................................................................................3
2. Topologies .................................................................................................................................4
3. Selection Guide ..........................................................................................................................6
3.1 600V Fast Switching Modules ..................................................................................................6
3.2 600V Modules with Trench IGBT ..............................................................................................7
3.3 1200V Modules with Trench 4 IGBT .........................................................................................8
3.4 1700V Modules with Trench IGBT ............................................................................................9
3.5 3-Level Modules ....................................................................................................................9
3.6 Half Bridge Modules ............................................................................................................. 10
3.7 Twin 6-pack Modules ........................................................................................................... 10
4. MiniSKiiP® Qualification ............................................................................................................. 11
5. Storage & Shelf Life Conditions .................................................................................................. 12
6. MiniSKiiP® Contact System ........................................................................................................ 12
6.1 PCB Specification for the MiniSKiiP® Contact System................................................................ 12
6.1.1 Conductive Layer Thickness Requirements ....................................................................... 12
6.1.2 NiAu as PCB Surface Finish ............................................................................................. 12
6.1.3 PCB Design .................................................................................................................. 12
6.1.4 PCB Soldering Process and Landing Pads .......................................................................... 14
6.2 Spring Contact Specification ................................................................................................. 14
6.3 Contact Resistance .............................................................................................................. 15
6.4 Electromigration and Whisker Formation ................................................................................ 16
6.5 Qualification of Contact System............................................................................................. 17
7. Safe Operating Areas for IGBTs .................................................................................................. 18
7.1 Safe Operating Area during Turn-on and Turn-off (SOA, RBSOA)............................................... 18
7.2 Safe Operating Area During Short Circuit (SCSOA) .................................................................. 18
8. Definition and Measurement of Rth and Zth ................................................................................... 19
8.1 Measuring Thermal Resistance Rth(j-s) ..................................................................................... 19
8.2 Transient Thermal Impedance (Zth) ....................................................................................... 20
9. Specification of the Integrated Temperature Sensor ...................................................................... 21
9.1 Electrical Characteristics (PTC) .............................................................................................. 22
9.2 Electrical Characteristics (NTC) ............................................................................................. 23
9.3 Electrical Isolation ............................................................................................................... 24
10. Creepage- and Clearance distances ............................................................................................ 25
11. Thermal Material Data ............................................................................................................... 26
12. Silicon Nitride AMB Substrates ................................................................................................... 27
13. Laser Marking .......................................................................................................................... 28
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
PROMGT.1023/ Rev.4/ Template Technical Explanation
Page 1/39
14. RoHS Compliance ..................................................................................................................... 28
15. Packing Specification ................................................................................................................ 29
15.1 Packing Box ........................................................................................................................ 29
15.2 Marking of Packing Boxes ..................................................................................................... 30
16. Type Designation System .......................................................................................................... 31
17. Caption of the Figures in the Data Sheets .................................................................................... 31
17.1 Caption of Figures in the Data Sheets of “065”, “066” and “126” Modules................................... 31
17.2 Caption of Figures in the Data Sheets of “12T4” and “176” Modules .......................................... 32
17.3 Calculation of max. DC-Current Value for “12T4” IGBTs ........................................................... 33
17.4 Internal and External Gate Resistors ...................................................................................... 33
18. Accessories .............................................................................................................................. 34
18.1 Evaluation Boards ............................................................................................................... 34
18.1.1 Static Test Boards ......................................................................................................... 35
18.1.2 Dynamic Test Boards ..................................................................................................... 35
18.1.3 Order Codes for Evaluation Boards .................................................................................. 36
18.2 Pressure Lid........................................................................................................................ 37
18.3 Pre-Applied Thermal Paste.................................................................................................... 37
18.4 Mechanical Sample .............................................................................................................. 37
19. Ordering Codes ........................................................................................................................ 38
20. Disclaimer ............................................................................................................................... 39
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1.
1.1
Introduction
Key Features
•
600V/650V Trench and 600V ultrafast (NPT) IGBTs
•
1200V and 1700V Trench and Trench 4 IGBTs
•
SEMIKRON inverse and freewheeling diodes in
CAL technology
•
SEMIKRON thyristors for controlled rectifiers
•
SEMIKRON rectifier diodes with high surge currents
•
Four different housing sizes
•
Current range 4A to 400A for power range
up to 90 kW
•
Comprehensive setup of circuit topologies:
CIBs, 6-pack, twin 6-pack, H-bridge, half bridge,
3-level, uncontrolled/half controlled input bridges
with brake chopper and custom specific modules for
various applications
•
Solderless and rugged spring contact technology
for all power and auxiliary connections
•
Fast and easy mounting with one or two screw(s)
•
Full isolation and low thermal resistance
due to DCB ceramic without base plate
•
Integrated PTC or NTC temperature sensor
1.2
Figure 1: MiniSKiiP® housing sizes
Advantages
Utilising the reliability of pressure contact technology the patented MiniSKiiP ® is a rugged, high-integrated
system including converter, inverter, brake (CIB) topologies for standard drive applications up to 90 kW
motor power. An integrated temperature sensor for monitoring the heat sink temperature enables an over
temperature shut down. All components integrated in one package greatly reduce handling. The reduced
number of parts increases the reliability.
MiniSKiiP® is using a well-approved Al2O3 DCB ceramic for achieving an isolation voltage of AC 2.5 kV per 1
min and superior thermal conductivity to the heat sink.
Due to optimised current density, matched materials for high power cycling capability and pressure contact
technology, MiniSKiiP® is a highly reliable, compact and cost effective power module.
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
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2.
Topologies
The MiniSKiiP® product platform offers wide range circuit topologies as catalogue and custom specific types
in four package sizes. Converter-Inverter-Brake (CIB), 6-pack, twin 6-pack, H-bridge, half bridge, 3-Level,
uncontrolled/half controlled input bridges with brake chopper and custom specific modules are available for
various applications. Following figures demonstrate a selection of available circuit topologies.
Figure 2: Selected MiniSKiiP® topologies
6-pack with open emitter (AC)
CIB with open emitter (NAB)
6-pack with common emitter (AC)
CIB with common emitter (NAB)
3-phase input bridge and 3-phase inverter (NAC)
Single phase input bridge, brake chopper and 3phase inverter (NEB)
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Half controlled 3-phase input bridge with brake
chopper (AHB)
Uncontrolled 3-phase input bridge with brake
chopper (ANB)
H-Bridge (GH)
3-Level (NPC)
3-Level (TNPC)
Twin 6-pack (ACC)
Half Bridge (GB)
3-phase 3-level (TNPC)
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3.
Selection Guide
For drive applications, the following tables and diagrams can be used as a first indication. In any case, a
verification of the selection with an accurate calculation is mandatory. For an easy calculation, SEMIKRON
offers a calculation tool called “SEMISEL”. It is a flexible calculation tool based on MathCad. Parameters can
be adapted to a broad range of applications.
SEMISEL can be found on the SEMIKRON homepage under
http://www.semikron.com/service-support/semisel-simulation.html
3.1
600V Fast Switching Modules
The following table shows the correlation between standard motor power (shaft power) and standard
MiniSKiiP® under typical conditions. For the calculation parameters, please refer to Figure 3.
Table 1: Standard motor shaft powers and maximum switching frequencies
fsw(max) [kHz]
<8
8 - 12
> 12
P [kW]
1.5
2.2
3
SKiiP 11NAB065V1
25
4
SKiiP 12NAB065V1
20
4
SKiiP 13NAB065V1
25
12
SKiiP 14NAB065V1
SKiiP 26NAB065V1
17
4
5.5
7.5
11
15
17
6
4
20
SKiiP 37NAB065V1
SKiiP 39AC065V2
15
Figure 3: Mechanical power vs. switching frequency for 600V fast MiniSKiiP® modules
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3.2
600V Modules with Trench IGBT
The following table shows the correlation between standard motor power (shaft power) and standard
MiniSKiiP® under typical conditions. For the calculation parameters, please refer to Figure 4.
Table 2: Standard motor shaft powers and maximum switching frequencies
fsw(max) [kHz]
<8
8 - 12
> 12
P [kW]
1.5
2.2
3
SKiiP 11NAB066V1
20
10
SKiiP 12NAB066V1
20
14
SKiiP 14NAB066V1
17
SKiiP 26NAB066V1
5.5
7.5
11
15
7
SKiiP 13NAB066V1
SKiiP 25NAB066V1
4
5.5
20
10
19
7
SKiiP 27AC066V1
17
5
SKiiP 28AC066V1
20
9
Figure 4: Mechanical power vs. switching frequency for 600V MiniSKiiP® modules
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3.3
1200V Modules with Trench 4 IGBT
The following table shows for which standard motor power (shaft power) which standard MiniSKiiP ® works
proper under typical conditions and switching frequencies. For the calculation parameters, please refer to
Figure 5.
Table 3: Standard motor shaft powers and maximum switching frequencies
fsw(max) [kHz]
<8
8 - 12
> 12
P [kW]
2.2
3
4
SKiiP 11AC12T4V1
20
18
9
20
17
9
18
11
SKiiP 12AC12T4V1
SKiiP 13AC12T4V1
5.5
7.5
15
18.5
22
4
16
7
SKiiP 25AC12T4V1
17
9
4
SKiiP 26AC12T4V1
18
10
6
SKiiP 37AC12T4V1
14
8
5
SKiiP 38AC12T4V1
17
11
7
6
13
10
8
SKiiP 39AC12T4V1
30
6
SKiiP 23AC12T4V1
SKiiP 24AC12T4V1
11
20
4
Figure 5: Mechanical power vs. switching frequency for 1200V MiniSKiiP® modules with
Trench 4 IGBT
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3.4
1700V Modules with Trench IGBT
The following table shows the portfolio of 1700V MiniSKiiP ® power modules for applications up to 690V AC
line voltage.
Table 4: MiniSKiiP® 1700V modules
Type designation
VCES in V
Ic,nom in A
Topology
Housing size
SKiiP 28ANB18V3
1700
100
3-phase bridge rectifier
+brake chopper
MiniSKiiP 2
SKiiP 38AC176V2
1700
100
6-pack
MiniSKiiP 3
SKiiP 24NAB176V1
1700
58
CIB
MiniSKiiP 2
SKiiP 34NAB176V3
1700
58
CIB
MiniSKiiP 3
3.5
3-Level Modules
The following table shows the portfolio of MiniSKiiP® power modules for 3-Level applications. Blocking
voltage values are referred to single switch value. The total blocking voltage in NPC module is 1300V since
two IGBTs are always operating in series.
Table 5: MiniSKiiP® 3-Level modules with NPC or TNPC topology
Type designation
VCES in V
Ic,nom in A
Topology
Housing size
SKiiP 26MLI07E3V1
650
75
NPC, 1-phase
MiniSKiiP 2
SKiiP 27MLI07E3V1
650
100
NPC, 1-phase
MiniSKiiP 2
SKiiP 28MLI07E3V1
650
150
NPC, 1-phase
MiniSKiiP 2
SKiiP 39MLI07E3V1
650
200
NPC, 1-phase
MiniSKiiP 3
SKiiP 28TMLI12F4V1
1200/650
80
TNPC, 1-phase
MiniSKiiP 2
SKiiP 29TMLI12F4V1 *
1200/650
150
TNPC, 1-phase
MiniSKiiP 2
SKiiP 35TMLI12F4V2 *
1200/650
40
TNPC, 3-phase
MiniSKiiP 3
SKiiP 39TMLI12T4V2
1200/650
200
TNPC, 1-phase
MiniSKiiP 3
* : under development
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3.6
Half Bridge Modules
The following table shows the portfolio of MiniSKiiP® half bridge power modules.
For detailed info please refer to Technical Explanations for MiniSKiiP Dual product series.
Table 6: MiniSKiiP® half bridge power modules
Type designation
VCES in V
Ic,nom in A
Topology
Housing size
SKiiP 24GB07E3V1
650
150
Half bridge (GB)
MiniSKiiP 2
SKiiP 26GB07E3V1
650
200
Half bridge (GB)
MiniSKiiP 2
SKiiP 38GB07E3V1
650
300
Half bridge (GB)
MiniSKiiP 3
SKiiP 24GB12T4V1
1200
150
Half bridge (GB)
MiniSKiiP 2
SKiiP 26GB12T4V1
1200
200
Half bridge (GB)
MiniSKiiP 2
SKiiP 38GB12E4V1
1200
300
Half bridge (GB)
MiniSKiiP 3
SKiiP 39GB12E4V1 *
1200
400
Half bridge (GB)
MiniSKiiP 3
SKiiP 22GB17E4V1
1700
100
Half bridge (GB)
MiniSKiiP 2
SKiiP 24GB17E4V1
1700
150
Half bridge (GB)
MiniSKiiP 2
SKiiP 36GB17E4V1
1700
200
Half bridge (GB)
MiniSKiiP 3
SKiiP 38GB17E4V1
1700
300
Half bridge (GB)
MiniSKiiP 3
* : under development
3.7
Twin 6-pack Modules
The following table indicates all 1200V MiniSKiiP® twin 6-pack power modules.
Table 7: MiniSKiiP® Twin power modules
Type designation
Converter
VCES in V
Converter
Ic,nom in A
Inverter
VCES in V
Inverter
Ic,nom in A
Housing
size
SKiiP 12ACC12T4V10
1200
8
1200
15
MiniSKiiP 1
SKiiP 23ACC12T4V10
1200
15
1200
25
MiniSKiiP 2
SKiiP 24ACC12T4V10
1200
25
1200
35
MiniSKiiP 2
SKiiP 35ACC12T4V10 *
1200
50
1200
50
MiniSKiiP 3
* : under evaluation
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4.
MiniSKiiP® Qualification
Standard tests for the product qualification and requalification.
The objectives of reliability tests are:
1. To ensure general product quality and reliability
2. To establish the limits of systems by exposing them to various test conditions
3. To ensure process stability and reproducibility of production processes
4. To evaluate the impact of product and process changes on reliability
The following standard tests are minimum requirements for the product release of power modules.
Table 8: Overview of SEMIKRON reliability tests, test conditions and relevant standards
Standard test conditions for:
Reliability Test
High Temperature Reverse Bias
(HTRB)
IEC 60747, DIN IEC 60749-23
MOS/IGBT Products
Diode/Thyristor Products
1,000 h,
VDS/VCE = 95% of voltage class,
125°C ≤ Tc ≤ 145°C
1,000 h, DC,
VD/VR = 66% of voltage class,
105°C ≤ Tc ≤ 120°C
1,000 h, ±VGS(max)/VGE(max),
Tj(max)
not applicable
504 h, 85°C, 85% RH,
VDS/VCE = 80% of voltage class,
VGE = 0 V
1000 h, 85°C, 85% RH,
VD/VR = max. 80V
High Temperature Storage (HTS)
IEC 60068-2-2 Test B
1,000 h, Tstg(max)
1,000 h, Tstg(max)
Low Temperature Storage
(LTS) IEC 60068-2-1
1,000 h, Tstg(min)
1,000 h, Tstg(min)
Thermal Shock (TS)
IEC 60068-2-14 Test Na
100 cycles,
Tstg(max) – Tstg(min)
100 cycles
Tstg(max) – Tstg(min)
20,000 load cycles,
ΔTj = 100 K
10,000 load cycles,
ΔTj = 100 K
Vibration
IEC 60068-2-6 Test Fc
Sinusoidal sweep, 5 g,
2 h per axis (x, y, z)
Sinusoidal sweep, 5g,
2 h per axis (x, y, z)
Mechanical Shock
IEC 60068-2-27 Test Ea
Half sine pulse, 30 g,
3 times each direction
(±x, ±y, ±z)
Half sine pulse, 30g,
3 times each direction
(±x, ±y, ±z)
High Temperature Gate Bias
(HTGB)
IEC 60747, DIN IEC 60749-23
High Humidity High
Temperature High Voltage
Reverse Bias (H3TRB)
IEC 60068-2-67
Power Cycling (PC)
IEC 60749-34
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5.
Storage & Shelf Life Conditions
MiniSKiiP power modules are qualified according to IEC 60721-4-1 and can be stored in original package for
2 years under climatic class 1K2 (IEC 60721-3-1):
Relative humidity:
Storage temperature:
5%...85%
5°C…40°C
According to our experiences, following shelf life conditions (which are not tested) are possible and should
not be exceeded:
Relative humidity:
Storage temperature:
Condensation:
Storage time:
max. 85%
-25°C…+60°C
not allowed at any time
max. 2 years
After extreme humidity the reverse current limits may be exceeded but do not degrade the performance of
the MiniSKiiP®.
MiniSKiiP® Contact System
6.
6.1
PCB Specification for the MiniSKiiP® Contact System
The material combination between the MiniSKiiP® spring surface and the corresponding contact pad surface
of the PCB has an influence to the contact resistance for different currents. Tin Lead alloy (SnPb) is an
approved interface for application with MiniSKiiP® modules. A sufficient plating thickness has to be ensured
according to PCB manufacturing process. In order to comply with RoHS rules, the use of following PCB
finish materials are recommended:
•
Nickel Gold flash (NiAu)
•
Hot Air Levelling Tin (HAL Sn)
•
Chemical Tin (Chem.l Sn)
It is not recommended to use boards with OSP (organic solderability preservatives) passivation.
OSP is not suitable to guarantee a long term corrosion free contact. The OSP passivation is
disappearing nearly 100% after a solder process or after 6 month storage.
6.1.1
Conductive Layer Thickness Requirements
No special requirements on the thickness of the tin layer are necessary. All standard HAL and chemical tin
boards (lead free process) are suitable. Due to PCB production process variations and several reflow
processes it may be possible, that the tin layer has been consumed by the growth of inter metallic phases
when mounting the MiniSKiiP®. For the functionality of the MiniSKiiP® spring contact system inside the
specification limits a tin layer over the inter metallic phase is not necessary. The inter metallic phase is
protecting the copper area on the PCB as well against oxidation as a long term effect.
6.1.2
NiAu as PCB Surface Finish
The material combination NiAu and Ag plated spring has the best contact capabilities. To ensure the
functionality of the Ni diffusion barrier, a thickness of at least 5µm nickel under plating is required.
6.1.3
PCB Design
PCB Design is in responsibility of the customer. SEMIKRON’s recommendation is to comply with valid
applicable regulations. In order to achieve the best performance layout the DC link should be a low
inductance design. The –DC / +DC and –B/+B conductors should be as coplanar as possible with the
maximum possible amount of copper area. The gate and the corresponding emitter tracks should be routed
as well parallel and close together. If using the “standard (space) lid” a possibility is given for using SMD
devices under the lid in certain areas. The maximum height of the applicable SMD devices is 3.5mm. Please
make sure that the devices do not conflict either with the pressure points or with the mounting domes of
the MiniSKiiP® / MiniSKiiP® lid. This will lead to an incorrect mounting increasing the thermal resistance
which may lead to a thermal failure. As material for the printed circuit board, the FR 4 material can be
applied. The thickness of copper layers should comply with IEC 326-3.
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MiniSKiiP application PCB mounting holes:

Module positioning pin hole diameter
- current data sheet value = 3.1mm +0.1mm/-0.0mm
- recommended value = 3.5mm ±0.1mm

Module mounting screw hole diameter
- current data sheet value = 9.1mm +0.2mm / -0.0mm
- recommended value 9.5mm ±0.1mm
PCB
MiniSKiiP
Figure 6: PCB hole diameters for MiniSKiiP® assembly, example: housing size 3
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6.1.4
PCB Soldering Process and Landing Pads
Components can be soldered on PCB using wave, reflow or selective soldering process. The landing pads
for the spring contact must be free of any contamination like of solder stop, solder flux, dust, sweat, oil or
other substances. If soldering components located on the PCB bottom side via wave soldering process, the
contact pads have to be covered using metal stencil to protect the landing pads from solder splashes. Using
an adhesive tape for masking the landing pads for protection requires paying particular attention that no
residues remain on pads worsening the contact quality. Size and position of the particular landing pads are
specified in the dedicated datasheet for each type. To ensure a reliable contact the landing pad size should
be not undercut those measures. The landing pads must be free from plated-through holes (“VIAs”), to
prevent any deterioration on a proper contact. In the remaining area, VIAs can be placed freely.
6.2
Spring Contact Specification
Material: K88
Surface finishing: silver (Ag) with 1-5µm thickness; contact area (top and bottom) with 3-5µm thickness
Surface protection: metallic passivation (50-55% Cu, 30-35% Sn, 13-17% Zn) thickness < 0.1μm
The base material K88 is a high-performance alloy for connector applications developed by Wieland Werke
and Olin Brass. This alloy offers high yield strength (550 MPa), very good formability up to sharp bending,
outstanding electrical conductivity (80% IACS) as well as remarkable relaxation resistance up to 200°C for
a long term stable spring force over the specified temperature range. No spring fatigue expected over the
complete MiniSKiiP® lifetime.
To protect the silver surface from deterioration it is covered with a metallic passivation film. This tarnish
protection of the MiniSKiiP spring pins is for cosmetic reasons only and protects the silver surface from
sulphuration and tarnishing for about half a year. Approximately half a year after production, depending on
the thickness of the tarnish protection, the silver springs can begin to decolourize. It is possible that the
springs of a single module show different states of discolouration.
Figure 7: Two examples for discoloured spring surfaces
The discolouration is caused by thin sulphide layers that develop on silver plated surfaces over time. The
tarnish layers are ultrathin and brittle. These sulphide layers are easily broken during mounting; they do
not impair the electrical contact. Therefore, MiniSKiiP modules with discoloured springs due to oxidation
and sulphuration can be used for inverter production without any risk.
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6.3
Contact Resistance
The total ohmic resistance of the current path through the MiniSKiiP power module consists of several
elements described in table and drawing below.
Note: The total ohmic resistance between the PCB terminals “1” and “2” is not the sum of
values stated in the table. The trace resistances of PCB and DBC must be considered
additionally.
Table 9: Elements of contact resistance
Resistance
Value
Explanation
RC11
0.75mΩ
Contact resistance between spring and PCB landing pad
RS1
1.5mΩ
Ohmic resistance of spring
RC12
0.75mΩ
Contact resistance between spring and DBC landing pad
RC21
0.75mΩ
Contact resistance between spring and DBC landing pad
RS2
1.5mΩ
Ohmic resistance of spring
RC22
0.75mΩ
Contact resistance between spring and PCB landing pad
Figure 8: Spring and contact resistances
1
PCB
2
SnPb
SnPb
Rc11
Contact spring,
K88, Ag plated
Rc12
Rc21
Rs1
Contact spring,
K88, Ag plated
Rs2
Al
Cu
DBC
Rc22
Cu
Al2O3
To ensure a proper contact after mounting the measure for the spring looking out of the housing is set to
min. 0.9mm (measured from the top surface to the head of the spring, Figure 9).
For a proper functionality the spring contacts must not be contaminated by oil, sweat or other substances.
Do not touch the spring surface with bare fingers. For this reason SEMIKRON recommends to wear gloves
during all handling of the MiniSKiiP® modules. Do not use any contact spray or other chemicals on the
spring.
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Figure 9: Spring excess length
min. 0.9mm
6.4
Electromigration and Whisker Formation
To exclude the risk of electromigration SEMIKRON has performed a corrosive atmosphere test with a high
concentration on H2S. The test was successfully passed, please see test conditions below:
Table 10: Electromigration and whisker formation test parameters
Pre-conditioning
48 hours
25°C
75% Relative Humidity
80V Bias Voltage
Corrosive Atmosphere test following
the pre-conditioning
240 hours
25°C
75% Relative Humidity
10ppm H2S
80V Bias Voltage
Failure criteria
Leakage current > 10µA
Whiskers are electrically conductive, crystalline structures growing out of a metal surface, generated by
compressive stresses present in the metal structure and accelerated upon exposure to a corrosive
atmosphere. After testing whisker growth has been observed on the edges of the MiniSKiiP® springs in the
area of less thick plating on the spring head and in the spring shafts. In no case whisker growth is
influencing the creepage and clearance distances at MiniSKiiP®. Spring shafts are non-conductive and made
of plastic. Therefore, no issue can arise with the formation of whiskers in the spring shafts. Whisker growth
on the spring head is not critical as well because the whisker is connecting spring pad and spring, which is
anyway connected.
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
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6.5
Qualification of Contact System
Table 11: Overview of MiniSKiiP contact system qualification tests for reliability
Pre-test Printed Circuit Board
Kind of Test
Conditions
Evaluation
1
Delivery condition
-
-
Analysis of material compositions:
Surface and cross section EDX/SEM
2
After Accelerated
Aging Test
High Humidity,
High Temperature
Storage
85°C
85% RH
1000h
Analysis of material compositions:
Surface and cross section EDX/SEM
3
After Accelerated
Aging Test
High Temperature
Storage
150°C
1000h
Analysis of material compositions:
Surface and cross section EDX/SEM
Pressure Contact System
Complete assembly: Mechanical Samples mounted with PCBs to a heat sink
Kind of Test
Conditions
Evaluation
4
High Temperature
Storage
125°C
1000h
Measurement of electrical contact resistance before
and after the test
5
High Humidity,
High Temperature
Storage
85°C
85% RH
1000h
Measurement of electrical contact resistance before
and after the test
6
Temperature
Cycling with
Current
- 40…+125°C
200 cycles
Continuous monitoring of contact resistance for:
Load current 6A
Sense current 1mA
7
Industrial
Atmosphere
in dependence
upon
IEC 60068-2-60
H2S
0.4ppm,
SO2
0.4ppm,
NO2
0.5ppm,
Cl2
0.1ppm,
21Days
Measurement of electrical contact resistance before
and after the test
8
Vibration
Sinusoidal sweep,
5 g, x, y, z – axis,
2 h/axis
Continuous monitoring of electrical contact
9
Shock
Half sine pulse,
30g, ±x, ±y, ±z –
direction, 2h/axis
Continuous monitoring of electrical contact
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
Page 17/39
7.
Safe Operating Areas for IGBTs
Safe operating areas are not included in the datasheets. They are given as standardized figures and
referenced to VCES and ICRM or ICnom. These figures apply to 600V, 1200V and 1700V.
7.1
Safe Operating Area during Turn-on and Turn-off (SOA, RBSOA)
The following figure shows the maximum collector current (horizontal limit) and maximum collector-emitter
voltage (vertical limit). It is important that the maximum ratings apply to currents which do not heat the
IGBT to temperatures above the maximum chip temperature Tj = 150°C or 175°C. IGBT modules may be
operated as switches only and must not be used in linear mode. The maximum VCES value must never be
exceeded. Due to the internal stray inductance of the module, an additional voltage will be induced during
switching. The maximum voltage at the terminals VCEmax,T must therefore be smaller than VCEmax (see dotted
line in Figure 10).
Figure 10: Safe Operating Area (SOA) / Reverse Biased Safe Operating Area (RBSOA)
7.2
Safe Operating Area During Short Circuit (SCSOA)
Under certain conditions, the IGBT is essentially capable of turning off short circuits actively. In doing so,
high power losses are generated by the IGBT working in the active operating area, causing a temporary
increase in chip temperature to far beyond Tj,max. However, the positive temperature coefficient of the
collector-emitter voltage causes the circuit to stabilize and the short-circuit current is limited to
4..6 x ICnom.
The following boundary conditions need to be fulfilled to ensure a safe operation:
 The maximum short circuit duration is 6µs for 600V IGBT and 10μs for 1200V IGBT at VGE ≤ 15V
 The number of short circuits may not exceed 1000 during the total operation time of the IGBT
 The time between two short circuits has to be at least 1s
 The maximum DC link voltage decreases to 360V for a 600V IGBT and 800V for a 1200V IGBT
The Figure 11 gives an example of the permissible SCSOA with a defined di/dt during turn-off. It must be
taken into consideration that the voltage at the terminals is exceeded by the chip voltage to the amount of
Ls*di/dt, meaning the maximum external voltage has to be reduced accordingly.
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
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Figure 11: Short Circuit Safe Operating Area (SCSOA) - Example
8.
8.1
Definition and Measurement of Rth and Zth
Measuring Thermal Resistance Rth(j-s)
The thermal resistance is defined as given in the following equation:
R th12  
ΔT T1  T2

PV
PV
The data sheet values for the thermal resistances are based on measured values. As can be seen in
equation above, the temperature difference ΔT has a major influence on the Rth value. As a result, the
reference point and the measurement method have a major influence, too.
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
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Figure 12: Measurement set up
Reference point Tj
(junction),
silicon chip, hot spot
DBC substrate
No copper baseplate!
Thermal grease
2 mm
Heatsink
Reference point Ts (heat sink)
Since MiniSKiiP® modules have no base plate, SEMIKRON gives the thermal resistance between the
junction and the heat sink Rth(j-s). This value depends largely on the thermal paste. Thus, the value is given
as a “typical” value in the data sheets.
The Rth(j-s) of the MiniSKiiP® module is measured on the basis of the reference points given in Figure 12.
The reference points are as follows:
•
Tj - The junction temperature of the chip
•
Ts – The heat sink temperature is measured in a drill hole, 2 mm beneath the module, directly under the
chip. The 2 mm is derived from our experience, which has shown that at this distance from the DBC
ceramic, parasitic effects resulting from heat sink parameters (size, thermal conductivity etc.) are at a
minimum and the disturbance induced by the thermocouple itself is negligible.
For further information on the measurement of thermal resistances, please refer to:
 M. Freyberg, U. Scheuermann, “Measuring Thermal Resistance of Power Modules “; PCIM Europe, May,
2003
The given Rth values can be used for a standard thermal design. For a more detailed and more accurate
thermal design it is important to create a dynamic thermal model of the heatsink taking in consideration
the chip positions.
8.2
Transient Thermal Impedance (Zth)
When switching on a “cold” module, the thermal resistance Rth appears smaller than the static value as
given in the data sheets. This phenomenon occurs due to the internal thermal capacities of the package.
These thermal capacities are “uncharged” and will be charged with the heating energy resulting from the
losses during operation. In the course of this charging process the R th value seems to increase. During this
time it is therefore called transient thermal impedance Zth. When all thermal capacities are charged and the
heating energy has to be emitted to the ambience, the transient thermal resistance Z th will have reached
the static data sheet value Rth.
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
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Figure 13: Zth - Transient thermal impedance with thermal paste Wacker P12
10
Zth(j-s)/Rth(j-s)
1
0,1
0,01
0,001
0,0001
0,00001
0,0001
0,001
0,01
0,1
1
tp in s
The transient thermal behaviour is measured during SEMIKRON’s module approval process. Based on this
measurement a mathematical model is derived, resulting in the following equation
Z
th

t 
t





τ 
τ


t   R 1  e 1   R 1  e 2
1
2









t




τ


3
  R3  1  e













For MiniSKiiP® modules, the coefficients R1, τ1, and R2, τ2 can be determined using the data sheet values as
given in Table 12.
Table 12: Parameters for Zth(j-s) calculation using equation
Parameter
Unit
IGBT, CAL diode
R1
[K/W]
0.11 x Rth(j-s)
R2
[K/W]
0.77 x Rth(j-s)
R3
[K/W]
0.12 x Rth(j-s)
τ1
[sec]
1.0
τ2
[sec]
0.13
τ3
[sec]
0.002
9.
Specification of the Integrated Temperature Sensor
Please note that MiniSKiiP® power modules are equipped with a temperature sensor of NTC (=negative
temperature coefficient) characteristic or of PTC (positive temperature coefficient) characteristic. Due to
insulation and space reasons the temperature sensor is mostly placed near the edge of the DBC but close
to an IGBT switch. The thermal coupling is not efficient enough to monitor the chip temperature of the
switch. Therefore, the temperature sensor can be used as an indicator for the DBC and heat sink
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
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temperature. For realising a trip level by an additional protection network the recommended value for the
trip temperature is about 115 °C (air cooling), based on a heat sink with a standard thermal lateral spread.
To get the detailed info about type of the temperature sensor in a specific module please refer to module
data sheet.
Note: Thermal coupling diminished if water-cooling is used
9.1
Electrical Characteristics (PTC)
The type “SKCS2 Temp 100” does have a characteristic like a resistance with positive temperature
coefficient (PTC) – see Fig. 14 .
Note: Thermal coupling diminished if water-cooling is used
Figure 14: Temperature sensor ”SKCS2 Temp 100“:Resistance as a function of temperature
2500
2250
Resistance in Ohm
2000
1750
1500
1250
1000
750
500
250
0
-50
-25
0
25
50
75
100
125
150
175
Temperature in °C
The temperature sensor has a nominal resistance of 1000 Ω at 25°C with a typical temperature coefficient
of 0.76 % / K.
Sensor resistance R(T) as a function of temperature:
R(T) = 1000 Ω * [1 + A * (T - 25 °C) + B * (T - 25 °C)² ]
with A = 7.635 * 10-3 °C-1 and B = 1.731 * 10-5 °C-2
At 25°C the measuring tolerance is max.  3 %, at 100°C max.  2 %.
SEMIKRON recommends a measuring current range of 1 mA ≤ Im ≤ 3 mA.
For realising a trip level by an additional protection network the recommended value for the trip
temperature is about 115 °C (air cooling), based on a heat sink with a standard thermal lateral spread.
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
Page 22/39
9.2
Electrical Characteristics (NTC)
Selected MiniSKiiP® power modules are equipped with sensor type “KG3B-35-5” which has an NTC
characteristic. The temperature sensor has a nominal resistance of 5000 Ω at 25°C (298.15 K). Following
table and diagram show its detailed characteristics.
Figure 15: Typical sensor resistance of “KG3B-35-5” as a function of temperature
100
Rtyp. in kΩ
10
1
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
150
140
130
120
110
90
100
Temperature in °C
80
70
60
50
40
30
20
10
0
-10
-20
-30
-40
0,1
Page 23/39
Table 13: Typical sensor resistance values for selected temperatures
9.3
Temperature
in °C
Temperature
in °F
R (typ.)
in kΩ
-40
-40
99.1
-30
-22
57.5
-20
-4
34.6
-10
14
21.5
0
32
13.7
10
50
9.00
20
68
6.05
25
77
5.00
30
86
4.16
40
104
2.91
50
122
2.08
60
140
1.52
70
158
1.12
80
176
0.840
90
194
0.640
100
212
0.493
110
230
0.385
120
248
0.304
130
266
0.243
140
284
0.196
150
302
0.160
Electrical Isolation
Inside the MiniSKiiP® the temperature sensor is mounted close to the IGBT and diode dice on the same
substrate. All MiniSKiiP modules provide functional isolation between temperature sensor and the remaining
circuit, if not otherwise stated in the data sheet . The isolation is tested in production.
≥0.55mm
Figure 16: Temperature sensor on DBC substrate
The isolation is 100% production tested with 2.5kV.
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
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Figure 17: Sketch of high energy plasma caused by melted off bond wire
During short circuit failure and therewith electrical overstress, the bond wires can melt off producing an arc
with high energy plasma. In this case, the direction of plasma expansion is not predictable; the
temperature sensor might be touched by plasma and exposed to a high voltage level.
The safety grade "Safe electrical Isolation" according to EN 50178 can be achieved by different additional
means, described there in detail.
10. Creepage- and Clearance distances
The pressure lid of MiniSKiiP® is designed as a hybrid construction with a metal inlay. The mounting screw
is electrically connected with the metal inlay and the heat sink. Since the pressure lid has the same
electrical potential as the heat sink creepage - and clearance distance considerations are required. Due to
the design, only creepage distances are relevant.
The distance between the metal inlay of the lid and the printed circuit board (Figure 18, 1.) are > 8.1 mm
as given in Figure 19. The internal distance between screw and board (Figure 18, 2.) is > 8.5 mm, as given
in Figure 20.
Inside the MiniSKiiP® a transparent silicone gel with a dielectric strength of 23 kV/mm ensures electrical
isolation from the DBC substrate to the heat sink (Figure 18, 3.) as well as from the DBC to the screw
(Figure 18, 4.).
Figure 18: MiniSKiiP® assembly cross-section indicating distances
1.
2.
3.
4.
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
Page 25/39
Figure 19: Cross-section sketch with distance from pressure plate to PCB
> 8.1 mm
Figure 20: Cross-section sketch with distance from screw to PCB
> 8.5 mm
11. Thermal Material Data
For thermal simulations it is necessary to have the thermal material properties e.g. layer thicknesses,
specific thermal capacities and conductivity of the layers. The layer structure is shown in Figure 21 below
and the material data in Table 14.
Figure 21: Sketch of MiniSKiiP® assembly indicating material layers
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
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Table 14: Material data for thermal simulations
Spec. thermal
conductivity λ
@25°C
in W/(m*K)
Spec.
thermal capacity
@25°C
in J/(kg*K)
Density
@25°C
in kg/m³
Layer
Material
Layer
thickness
in µm
IGBT chip “066”
Si
70
148
700…750
2330
IGBT chip “126”
Si
120
148
700…750
2330
IGBT chip “T4”, “F4”
Si
115
148
700…750
2330
IGBT chip “E4”
Si
120
148
700…750
2330
IGBT chip “17”
Si
190
148
700…750
2330
600V diode chip “I3”
Si
246
148
700…750
2330
600V diode chip “HD”
Si
241
148
700…750
2330
650V diode chip
Si
238
148
700…750
2330
1200V “I3”/”HD”
Si
271
148
700…750
2330
1200V “I4F”
Si
261
148
700…750
2330
1700V “I4F”
Si
296
148
700…750
2330
1700V “I”/”HD”
Si
304
148
700…750
2330
Chip solder layer
SnAg
≈70
57
214
7800
DBC copper (top)
Cu
300
394
385
8960
DBC ceramic
Al2O3
380
24
830
3780
DBC copper (bottom)
Cu
300
394
385
8960
Thermal paste
Customer
specific
-
-
-
-
Heat sink
Customer
specific
-
-
-
-
12. Silicon Nitride AMB Substrates
Si3N4 substrates are offering a better thermal conductivity compared to standard Al 2O3 DCBs (Direct copper
bonding) substrates. Si3N4 is a ceramic substrate in AMB (=Active Metal Brazed) technology which is using
a silver layer between the copper layer and the Si3N4 ceramic.
Due to the fact that silver can migrate when humidity and DC voltage is applied the standard “High
Humidity High Temperature High Voltage Reverse Bias” (H3TRB) qualification test would lead to an optical
change of the substrate surface (dendritic appearance of the migrating silver). To assure the reliability of
the Si3N4 based products a climatic change inverter test with following test conditions, VDC=540V,
T=-15°C/+85°C, RH=10%/85%, fsw=1kHz, cycle time=12h, cycles=10 has therefore been performed as
additional climatic test.
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
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13. Laser Marking
All MiniSKiiP® modules passed
following info items:
the production line tests will be laser marked. The marking contains
Figure 22: Laser marking contents of MiniSKiiP®
1.
2.
3.
4.
5.
SEMIKRON logo
Type designation
SEMIKRON part number
Date code – 5 digits: YYWWL (L=Lot of same type per week)
“E”: Evaluation, engineering or application samples; for the type of sample please refer to the
accompanying documents
6. “R”: Identification for compliance with RoHS
7. Data matrix code
The data matrix code consists of 53 digits and is described as follows:

type:
EEC 200

standard:
ISO / IEC 16022

cell size:
0.46 mm

field size:
24 x 24

dimension: 11 x 11 mm plus a guard zone of 1 mm (circulating)

the following data is coded:
Table 15: MiniSKiiP® data matrix code description
Position
1
2
Content Type
designation
Digits
Example
16
SKiiP
37NAB12T4V1
3
Part
number
1
10
4
5
Production
tracking
number
12
25231570 14DE05006456
6
7
8
Measure- Production
ment
line
number
identifier
1
1
1
1
2
9
10
Continuous
number
1
4
0018
11
Date
code
1
5
14470
14. RoHS Compliance
RoHS: The Restriction of Hazardous Substances in Electrical and Electronic Equipment (RoHS) Directive
(2002/95/EC)
MiniSKiiP® is in compliance with the RoHS Directive (2002/95/EC). Newer MiniSKiiP ® modules are marked
with “R” behind the date code to show the compliance with RoHS in the laser marking as well (Figure 22, 6.)
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
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15. Packing Specification
15.1 Packing Box
Standard packing boxes for MiniSKiiP® Modules:
Figure 23: Outer cardboard box, dimensions: 600 x 400 x 100 mm³ (l x w x h)
Three layers of
antistatic trays with
MiniSKiiP
Three additional card
board boxes with
pressure lids included
in the outer box
600
mm
400
mm
Figure 24; Antistatic tray,
dimensions: 440 x 275 x 30 mm³
Figure 25: Card board for pressure
lids, dimensions: 150 x 130 x 95 mm³
Cover tray on top
Bottom tray
with modules
Quantities per package:
MiniSKiiP®
MiniSKiiP®
MiniSKiiP®
MiniSKiiP®
Bill of materials:
Boxes:
Trays:
Dry Pack:
0
1
2
3
3
3
3
3
trays
trays
trays
trays
with
with
with
with
66
40
24
16
modules
modules
modules
modules
=
=
=
=
198
120
72
48
pcs
pcs
pcs
pcs
(
(
(
(
8.0
8.5
9.5
9.8
kg)
kg)
kg)
kg)
Paper (card board)
A-PET (not electrically chargeable)
Activated and grained clay in paper bags
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
Page 29/39
15.2 Marking of Packing Boxes
All MiniSKiiP® packing boxes are marked with a sticker label.
This label is placed on the packing box as can be seen in Figure 26:
Figure 26: Place for label on MiniSKiiP® packing boxes
The label contains the following items (see Figure 27)
Figure 27: Label of MiniSKiiP® packing boxes
Packing box label description :
1.
2.
3.
4.
5.
6.
Type designation including accessories (see table for variant codes)
Order: Order confirmation number
DMX code
Id.-Nr: SEMIKRON part number / variant code (see table for variant codes)
QTY: Quantity of modules inside the box
Lot: Date code=5 digits=YYWWL (example: year=2015, calendar week=33, lot=0); R=RoHS compliance
Bar Code due to
•
standard:
EEC 200
•
Format:
19/9
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
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16. Type Designation System
Table 16: MiniSKiiP® type designation
Position
Content
1
2
3
Product Housing Current
Group
Size
Class
4
5
6
7
Topology
Voltage
Class
IGBT
Technology
Version
Values
SKiiP
0
1
2
3
0-9
AC: 6-pack;
NAB: 3-phase
rectifier, brake
chopper, 3-phase
inverter;
ANB: 3-phase
uncontrolled rectifier,
brake chopper;
AHB: 3-phase half
controlled rectifier,
brake chopper;
GH: H-bridge;
GB: half bridge;
ACC: twin 6-pack;
MLI: 3-level (NPC);
TMLI: 3-level
(TNPC);
NAC: 3-phase
rectifier, 3-phase
inverter;
NEB: 1-phase
rectifier, brake
chopper, 3-phase
inverter;
Customer specific
Example
SKiiP
3
7
NAB
06=600V
07=650V
12=1200V
16=1600V
18=1800V
17=1700V
5=Ultra fast NTP Vx=Version
6=Trench 3
number
E3=Trench 3
E4=Trench 4
T4=Trench 4
F4=Fast trench 4
12
T4
V1
17. Caption of the Figures in the Data Sheets
17.1 Caption of Figures in the Data Sheets of “065”, “066” and “126” Modules
For MiniSKiiP® II Generation modules with “065”, “066” and “126” IGBT chip technologies (Ultra fast NPT
IGBT and Fast Trench IGBT) the following captions of figures are given in the data sheet:
AC-Topologies
Fig. 1
Inverter IGBTs: Collector current IC as a function of the collector-emitter voltage VCE (typical
output characteristics);
Parameters: Gate-emitter voltage VGE, Tj= 25°C, Tj = 125°C or Tj = 150°C
Fig. 2
Maximum rated continuous DC collector current IC as a function of the heat sink temperature T s
Fig. 3
Collector current IC as a function of the Gate-emitter-voltage VGE (typical transfer
characteristics)
Fig. 4
Maximum safe operating area for periodic turn off (RBSOA) at Tj ≤ 150°C and VGE =±15V
Fig. 5
Typical Turn-on and Turn-off energy dissipation Eon and Eoff of one IGBT switch as a function of
the collector current IC for inductive load using a suitable RG ; Tj = 125°C
Fig. 6
Typical Turn-on and Turn-off energy dissipation Eon and Eoff of one IGBT switch as a function of
the gate series resistance RG for inductive load using a suitable Ic ; Tj = 125°C
Fig. 7
Typical gate charge characteristic: Gate-emitter voltage VGE as a function of the gate charge QG
Fig. 8
Transient thermal impedance Zth(j-s) of one IGBT switch and corresponding inverse diode as
function of time
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
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Fig. 9
Forward characteristics of an inverse diode. Typical and maximum values at Tj = 25°C and Tj =
125°C or Tj = 150°C
CIB, ANB and AHB Topologies
Fig. 10
Forward characteristics of an input bridge diode. Typical and maximum values at Tj = 25°C and
Tj = 125°C or Tj = 150°C
AHB-Topologies
Fig. 11
Thyristor gate voltage VG against gate current IG (total spread) showing the region of possible
(BMZ) and certain (BSZ) triggering for various junction temperatures Tj. The voltage and
current of triggering pulses have to be in the region of certain triggering (BSZ), but the peak
pulse power PG must not exceed that given for the pulse duration tp used.
The curve 20 V, 20  is the inverter characteristic of an adequate trigger element.
17.2 Caption of Figures in the Data Sheets of “12T4” and “176” Modules
For MiniSKiiP® II Generation modules with Trench 3 (176) or Trench 4 (12T4) IGBT chip technologies the
following captions of figures are given in the data sheet:
Fig. 1
Inverter IGBTs: Collector current IC as a function of the collector-emitter
voltage VCE (typical output characteristics);
Parameters: Gate-emitter voltage VGE, Tj = 25°C, Tj = 125°C or Tj = 150°C
Fig. 2
Maximum rated continuous DC collector current IC as a function of the heat sink temperature T s
Fig. 3
Typical Turn-on and Turn-off energy dissipation Eon and Eoff of one IGBT switch as a function of
the collector current IC for inductive load using a suitable RG ; Tj = 125°C or Tj = 150°C
Fig. 4
Typical Turn-on and Turn-off energy dissipation Eon and Eoff of one IGBT switch as a function of
the gate series resistance RG for inductive load using a suitable Ic ; Tj = 125°C or Tj = 150°C
Fig. 5
Collector current IC as a function of the Gate-emitter-voltage
VGE (typical transfer characteristics)
Fig. 6
Typical gate charge characteristic: Gate-emitter voltage VGE as a function of the gate charge QG
Fig. 7
Typical Turn-on and Turn-off switching times (td,on, td,off, tr, tf) as a function of the collector
current IC for inductive load using a suitable RG ; Tj = 125°C or Tj = 150°C
Fig. 8
Typical Turn-on and Turn-off switching times (td,on, td,off, tr, tf) as a function of the gate series
resistance RG for inductive load using a suitable Ic ; Tj = 125°C or Tj = 150°C
Fig. 9
Transient thermal impedance Zth(j-s) of one IGBT switch
and corresponding inverse diode as function of time
Fig. 10
Forward characteristics of an inverse diode.
Typical and maximum values at Tj = 25°C and Tj = 125°C or Tj = 150°C
Fig. 11
Typical peak reverse recovery current IRRM of the inverse diode as a function of the fall rate diF/dt
of the forward current with corresponding gate series resistance RG of the IGBT during turn-on
Fig. 12
Typical recovery charge Qrr of the inverse diode as a function of the fall rate diF/dt of the forward
current (Parameters: forward current IF and gate series resistance RG of the IGBT during turn-on)
© by SEMIKRON / 2016-07-20 / Technical Explanation / MiniSKiiP® Generation II
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CIB-Topologies
Fig. 12
Forward characteristics of an input bridge diode.
Typical and maximum values at Tj = 25°C and Tj = 125°C or Tj = 150°C
17.3 Calculation of max. DC-Current Value for “12T4” IGBTs
In the data sheets for MiniSKiiP® IGBT 4 types (“12T4”) the maximum DC-current IC,max is given. Three
different considerations lead to limitations of the IC,max:
•
Thermal resistance for continuous operation
•
Limitation by main terminals
•
Chip size and bond configuration
17.4 Internal and External Gate Resistors
Inside most of the SEMIKRON modules, IGBT chips are paralleled on the power hybrid to achieve higher
currents. Therefore, the large IGBT dice contain internal gate resistors to perform acceptable decoupling
when paralleled.
Figure 28: Two IGBTs with internal gate resistors paralleled
In some MiniSKiiP® data sheets the total internal gate resistor is given, which is the equivalent resistance
for the paralleled gate resistors in each chip. An example is given in Figure 28 where two IGBT dices are
paralleled to one switch of the module with the external power connectors “C” and “E” and the external
gate connector “G”. Each chip has his own gate resistor (RG-int1 and RG-int2). The equivalent resistance RG-int
given in the data sheet is
R G-int 
1
1
R G-int1

1
R G-int2
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Assuming that RG-int1 = RG-int2 (the same IGBT-type) the data sheet value RG-int is half the value of the
resistor on a single chip (RG-int1 and RG-int2) in this example:
RG-int 
1
1
RG-int1

1

RG-int1
1
2

RG-int1
2
RG-int1
The external gate resistor values RG-on and RG-off given in the data sheets are recommendations from
SEMIKRON to achieve smooth switching behaviour together with low switching losses. Since the switching
behaviour strongly depends on the external assembly, the external gate resistors R G-on and RG-off have to be
tested in the customer application and – if necessary – adjusted.
18. Accessories
18.1 Evaluation Boards
The evaluation boards (example Figure 29: Dynamic evaluation board for MiniSKiiP®2 “AC” types) are
offered to customers for design support to enable a fast and convenient way to connect the MiniSKiiP® with
a lab or breadboard circuit.
Figure 29: Dynamic evaluation board for MiniSKiiP®2 “AC” types
Generic Specification
Material
: FR4 2 layer board
Dimensions
: specific to board, see below
Thickness
: 1.5mm
Conductor
: 70µm Cu, PbSn plating
Mounting
: all 4 corners prepared for clip on feet stand offs,
Ø 4mm or threaded stand offs, screw Ø 4mm
Auxiliary terminals : prepared for use of solder pins, board to wire connectors or board to board
connectors.
Static board connectors:
5pol single in line, grid dimension 5mm, pin Ø 2mm
7pol single in line, grid dimension 5mm, pin Ø 2mm
Dynamic board connectors:
2pol single in line, grid dimension 2.54mm, pin Ø1 mm;
10pol single in line, grid dimension 2.54mm, pin Ø1 mm
Main terminals of static and dynamic boards are prepared for use of cable sockets and screws:
•
+/- DC connection: Ø 5mm
•
Phase out (U,V,W) connection: Ø 4mm.
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Maximum continuous current: Idmax = 30Amp*
* limited by the current capability of the narrowest part of the conductor path. Not all evaluation board
layouts are suitable for full current rating of the corresponding MiniSKiiP ® type! New generation boards
lead free and with higher current capability are in preparation.
18.1.1 Static Test Boards
For static measurements only. This layout is optimized to have the shortest connection between the
Terminal and the Chips/Springs. The static test board allows an easy and fast connection to the MiniSKiiP ®
in a lab circuit to evaluate the static values like VCEsat, Vf, Rth, etc.
18.1.2 Dynamic Test Boards
The dynamic board layout is optimized for dynamic operation. Therefore a low stray inductance design was
realized. The boards allow as well the use of capacitors and resistors for a DC link pre-charge circuit.
Recommendation:
2 electrolytic capacitors 330μF / 400V, Ø 30mm
2 resistors 68KΩ/ 4W, 1 resistor 330Ω/ 4W
Dynamic test boards are for use under application near conditions for breadboard constructions but with
limited current.
As stated above the dynamic test boards are not designed for use in the final customer product and not for
use of max module current.
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18.1.3 Order Codes for Evaluation Boards
Evaluation board can be ordered using following P/Ns:
Table 17: MiniSKiiP® evaluation boards
Housing
size
0
Topology
AC
Static Board
P/N
41085315
Static Board
Dimensions
160mm x 100mm
Dynamic Board
P/N
41085310
Dynamic Board
Dimensions
130mm x 132mm
0
NAC
41094855
160mm x 100mm
41094850
130mm x 132mm
0
NEB
41094875
160mm x 100mm
41094870
130mm x 132mm
1
AC
41085245
160mm x 100mm
41085240
135mm x 105mm
1
ACC
41097595
160mm x 100mm
41097590
130mm x 134mm
1
NAB
41085295
160mm x 100mm
41085290
125mm x 135mm
2
AC
41085255
160mm x 100mm
41085250
130mm x 140mm
2
ACC
41100585
160mm x 100mm
41100580
130mm x 134mm
2
NAB
41085305
160mm x 100mm
41085300
130mm x 140mm
2
MLI
45103600
120mm x 105mm
2
TMLI (28TMLI)
45115200
176mm x 131mm
2
TMLI (29TMLI)
45124800
176mm x 131mm
2
ANB (1700V)
45114100
176mm x 131mm
2
NAB (1700V)
45117900
176mm x 131mm
2
GB
45117200
140mm x 115mm
41085330
163mm x 114mm
L5047100
160mm x 125mm
41085230
163mm x 114mm
3
AC (126)
3
AC (12T4)
41085335
3
NAB
3
MLI
45102900
145mm x 105mm
3
AC (1700V)
45117500
176mm x 131mm
3
NAB (1700V)
45118100
176mm x 131mm
3
GB
45117300
140mm x 115mm
3
TMLI (39TMLI)
45112000
105mm x 145mm
41085235
160mm x 100mm
160mm x 100mm
Additional boards for special types may be available on request. Please contact our closest sales office.
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18.2 Pressure Lid
The following pressure lid P/Ns are worldwide present in the NAVISION ERP system.
Table 18: MiniSKiiP® II pressure lids
Size
0
Slim Type P/N
25121040
Standard Type P/N
25121000
1
25121050
25121010
2
25121060
25121020
3
25121070
25121030
Please refer to chapter “ordering codes” to select the correct order (variant) code.
MiniSKiiP® II pressure lid drawings in special file formats are available on request.
Please contact our closest sales office.
18.3 Pre-Applied Thermal Paste
SEMIKRON offers MiniSKiiP® power modules with following types of pre-applied thermal paste:




Wacker P12 (silicone-based)
Electrolube HTC (non-silicone-based)
High performance thermal paste (silicone-based)
Figure 30: MiniSKiiP® with pre-applied thermal paste
Please refer to chapter “Ordering Codes” to select the correct order (variant) code.
18.4 Mechanical Sample
Mechanical samples can be ordered using following P/Ns:
Table 19: MiniSKiiP® II mechanical samples
Housing size
0
P/N
25231100
1
25231110
2
25231120
3
25231130
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19. Ordering Codes
Table 20: MiniSKiiP® ordering codes (variant codes)
Variant
code
M00
Description
MiniSKiiP® module without any accessory
M01
MiniSKiiP® module + thermal paste (P12, λ=0.8 W/mK)
M02
MiniSKiiP® module + thermal paste (HTC, λ=0.9 W/mK)
M05
MiniSKiiP® module + thermal paste (HpTp, λ=2.5 W/mK)
M10
MiniSKiiP® module + slim pressure lid (2.8mm height)
M11
MiniSKiiP® module + slim pressure lid (2.8mm height) + thermal paste (P12, λ=0.8 W/mK)
M12
MiniSKiiP® module + slim pressure lid (2.8mm height) + thermal paste (HTC, λ=0.9 W/mK)
M15
MiniSKiiP® module + slim pressure lid (2.8mm height) + thermal paste (HpTp, λ=2.5 W/mK)
M20
MiniSKiiP® module + standard pressure lid (6.5mm height)
M21
MiniSKiiP® module + standard pressure lid (6.5mm height) + thermal paste (P12, λ=0.8 W/mK)
M22
MiniSKiiP® module + standard pressure lid (6.5mm height) + thermal paste (HTC, λ=0.9 W/mK)
M25
MiniSKiiP® module + standard pressure lid (6.5mm height) + thermal paste (HpTp, λ=2.5 W/mK)
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20. Disclaimer
IMPORTANT NOTICE:
The technical data and hardware of the above offered evaluation boards are serving for technical support
only. Any warranty is excluded. Technical details may change without notice.
No components are included in delivery. All boards will be delivered without Connectors, SMDs, Standoffs
etc. All above mentioned components are standard components available at electronic distributors. No
components are available from SEMIKRON neither as kits nor as individual parts.
The evaluation boards are not suitable to replace final PCBs or for use in customer end-products.
DISCLAIMER:
SEMIKRON does not take on any liability for literal mistakes in the above displayed “Technical
Information”. The content of the information is according to today’s standards and knowledge and written
up with necessary care. A liability for usableness and correctness is excluded. A liability for direct or
secondary damages resulting from use of this information is excluded, unless regulated by applicable law.
The given examples are not taking in consideration individual cases, therefore a liability is excluded. The
content is subject to change without further notice. In addition to that the SEMIKRON terms and condition
apply exclusively, valid version displayed under http://www.semikron.com.
SEMIKRON INTERNATIONAL GmbH
P.O. Box 820251 • 90253 Nuremberg • Germany
Tel: +49 911-65 59-234 • Fax: +49 911-65 59-262
sales.skd@semikron.com • www.semikron.com
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