TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Applications






Military radar
Civilian radar
Professional and military radio communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers
Product Features
Functional Block Diagram
 Frequency: DC to 3.5 GHz
 Output Power (P3dB): 126 W Peak
(25 Watts Avg.) at 3.3 GHz
 Linear Gain: >14 dB at 3.3 GHz
 Typical PAE: > 58% at 3.3 GHz
 Operating Voltage: 32 V
 Low thermal resistance package
General Description
Pin Configuration
The TriQuint TGF2819-FS is a greater-than 100 W Peak
(20 W Avg.) (P3dB) discrete GaN on SiC HEMT which
operates from DC to 3.5 GHz. The device is constructed
with TriQuint’s proven TQGaN25HV process, which
features advanced field plate techniques to optimize
power and efficiency at high drain bias operating
conditions. This optimization can potentially lower
system costs in terms of fewer amplifier line-ups and
lower thermal management costs.
Pin No.
Label
1
2
Flange
VD / RF OUT
VG / RF IN
Source
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Ordering Information
Part
ECCN
Description
TGF2819-FS
3A001.b.3.a
Packaged part
Flangeless
TGF2819-FS-EVB1 EAR99
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
- 1 of 21 -
3.1-3.5 GHz
Evaluation Board
Disclaimer: Subject to change without notice
www.triquint.com
TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Parameter
Breakdown Voltage (BVDG)
Gate Voltage Range (VG)
Drain Current (ID)
Gate Current (IG)
Power Dissipation (PD)
RF Input Power, CW,
T = 25°C (PIN)
Value
145 V
-7 to 0 V
12 A
-28.8 to 33.6 mA
144 W
39.8 dBm
Channel Temperature (TCH)
275 °C
Mounting Temperature
(30 Seconds)
320 °C
Storage Temperature
-40 to 150 °C
Value
Drain Voltage (VD)
Drain Quiescent Current (IDQ)
Peak Drain Current, Pulse ( ID)
Gate Voltage (VG)
Channel Temperature (TCH)
Power Dissipation, CW (PD)
Power Dissipation, Pulse (PD)
32 V (Typ.)
250 mA (Typ.)
7.23 A (Typ.)
-2.9 V (Typ.)
250 °C (Max.)
86 W (Max)
144 W (Max)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Pulse signal: 100uS Pulse Width, 20% Duty Cycle
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
RF Characterization – Load Pull Performance at 2.7 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 250 mA
Symbol Parameter
GLIN
P3dB
PAE3dB
G3dB
Min
Linear Gain (Power Tuned)
Output Power at 3 dB Gain Compression (Power Tuned)
Power-Added Efficiency at 3 dB Gain Compression (Eff.
Tuned)
Gain at 3 dB Compression (Power Tuned)
Typical
Max
Units
13.6
135
dB
W
60.9
%
10.6
dB
Notes:
1. Pulse: 100µs, 20%
RF Characterization – Load Pull Performance at 2.9 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 250 mA
Symbol Parameter
GLIN
P3dB
PAE3dB
G3dB
Min
Linear Gain (Power Tuned)
Output Power at 3 dB Gain Compression (Power Tuned)
Power-Added Efficiency at 3 dB Gain Compression (Eff.
Tuned)
Gain at 3 dB Compression (Power Tuned)
Typical
Max
Units
14.8
145
dB
W
69.5
%
11.8
dB
Notes:
1. Pulse: 100µs, 20%
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
- 2 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
RF Characterization – Load Pull Performance at 3.1 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 250 mA
Symbol Parameter
GLIN
P3dB
PAE3dB
G3dB
Min
Linear Gain (Power Tuned)
Output Power at 3 dB Gain Compression (Power Tuned)
Power-Added Efficiency at 3 dB Gain Compression (Eff.
Tuned)
Gain at 3 dB Compression (Power Tuned)
Typical
Max
Units
14.3
129
dB
W
61.4
%
11.3
dB
Notes:
1. Pulse: 100µs, 20%
RF Characterization – Load Pull Performance at 3.3 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 250 mA
Symbol Parameter
GLIN
P3dB
PAE3dB
G3dB
Min
Linear Gain (Power Tuned)
Output Power at 3 dB Gain Compression (Power Tuned)
Power-Added Efficiency at 3 dB Gain Compression (Eff.
Tuned)
Gain at 3 dB Compression (Power Tuned)
Typical
Max
Units
14.2
126
dB
W
58.3
%
11.2
dB
Notes:
1. Pulse: 100µs, 20%
RF Characterization – Load Pull Performance at 3.5 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 250 mA
Symbol Parameter
GLIN
P3dB
PAE3dB
G3dB
Min
Linear Gain (Power Tuned)
Output Power at 3 dB Gain Compression (Power Tuned)
Power-Added Efficiency at 3 dB Gain Compression (Eff.
Tuned)
Gain at 3 dB Compression (Power Tuned)
Typical
Max
Units
13.9
120
dB
W
59.8
%
10.9
dB
Notes:
1. Pulse: 100µs, 20%
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
- 3 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
RF Characterization – Performance at 3.5GHz (1, 2)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 250 mA
Symbol Parameter
Min
Typical
Max
Units
GLIN
Linear Gain
15.1
dB
P3dB
Output Power at 3 dB Gain Compression
126
W
Power-Added Efficiency at 3 dB Gain Compression
49.2
%
Gain at 3 dB Compression
12.1
dB
PAE3dB
G3dB
Notes:
1. Pulse: 100µs PW, 20%
2. Performance at 3.5GHz in the 3.1 to 3.5GHz Evaluation Board
RF Characterization – Mismatched Ruggedness at 3.50 GHz (1, 2)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 250 mA
Symbol Parameter
VSWR
Typical
Impedance Mismatch Ruggedness
10:1
Notes:
1. Input power established at P3dB at matched load at the output of 3.1 – 3.5 GHz Evaluation Board
2. Pulse: 100uS PW, 20%
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
- 4 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Thermal and Reliability Information
Parameter
Test Conditions
Thermal Resistance(1) (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance(1) (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance(1) (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance(1) (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Vd = 32V, Tbase = 85°C
100uS, 5%, Pdiss = 100W
Vd = 32V, Tbase = 85°C
100uS, 10%, Pdiss = 100W
Vd = 32V, Tbase = 85°C
300uS, 20%, Pdiss = 100W
Vd = 32V, Tbase = 85°C
300uS, 50%, Pdiss = 100W
Value
Units
0.75
160
1.92E09
0.79
164.3
1.24E09
0.88
173
5.13E08
1.15
200.3
4.20E07
°C/W
°C
Hours
°C/W
°C
Hours
°C/W
°C
Hours
°C/W
°C
Hours
Notes:
1. Thermal resistance measured to bottom of package.
Median Lifetime
Median Lifetime vs. Channel Temperature
1.00E+19
1.00E+18
Median Lifetime, TM (Hours)
1.00E+17
1.00E+16
1.00E+15
1.00E+14
1.00E+13
1.00E+12
1.00E+11
1.00E+10
1.00E+09
1.00E+08
1.00E+07
1.00E+06
1.00E+05
25
50
75
100
125
150
175
200
225
250
275
Channel Temperature, TCH (°C)
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
- 5 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Maximum Channel Temperature
Maximum Channel Temperature
Package base fixed at 85 oC, Pdiss = 100 W
260.0
Maximum Channel Temperature ( oC)
240.0
220.0
200.0
180.0
5% Duty Cycle
10% Duty Cycle
20% Duty Cycle
50% Duty Cycle
160.0
140.0
120.0
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
1.00E+00
Pulse Width (sec)
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
- 6 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18.
Notes:
1. Test Conditions: VDS = 32 V, IDQ = 250 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
2.7GHz, Load-pull
1
0.9
0.8
0.5
0.4
0.3
0.2
0.1
0
0.7
0
.1
Zs(fo)
= 7.12-3.63i 
0.6
Max Power is 51.3dBm
at Z = 2.704-3.398i 
 = -0.4692-0.393i
Max Gain is 12.4dB
at Z = 2.404-0.809i 
 = -0.6056-0.1047i
Max PAE is 57.1%
at Z = 1.921-1.351i 
 = -0.6565-0.1877i
12.1
11.6
-0.1
56.7
50.7
54.7
52.7
11.1
50.9
51.1
-0.2
3
-0.
Zo = 10
Pin_ref = 19dBm
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
Power
Gain
PAE
.4
-0
- 7 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18.
Notes:
1. Test Conditions: VDS = 32 V, IDQ = 250 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
13.3
0.6
0.5
Max Power is 51.6dBm
at Z = 2.377-3.545i 
 = -0.4934-0.4278i
Max Gain is 13.6dB
at Z = 2.514-1.449i 
 = -0.577-0.1827i
Max PAE is 63.8%
at Z = 1.796-2.264i 
 = -0.6352-0.3138i
0.4
0.3
0
Zs(fo) = 8.04-7.51i 
0.2
0.1
2.9GHz, Load-pull
-0.1
13.3
12.8
62.2
60.2
51.2
58.2
12.3
51.4
-0.2
51.6
3
-0.
Zo = 10
Pin_ref = 20.6dBm
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
Power
Gain
PAE
.4
-0
- 8 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18.
Notes:
1. Test Conditions: VDS = 32 V, IDQ = 250 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
0.6
0.5
Max Power is 51.1dBm
at Z = 2.962-4.499i 
 = -0.3771-0.478i
Max Gain is 13.8dB
at Z = 1.394-1.6i 
 = -0.7214-0.2418i
Max PAE is 57.9%
at Z = 1.75-2.246i 
 = -0.6422-0.314i
0.4
0.3
0
Zs(fo) = 12.14-8.66i 
0.2
0.1
3.1GHz, Load-pull
-0.1
13.5
54.6
56.6
52.6
13
-0.2
12.5
50.7
51.1
50.9
3
-0.
Zo = 10
Pin_ref = 25.5dBm
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
Power
Gain
PAE
.4
-0
- 9 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18.
Notes:
1. Test Conditions: VDS = 32 V, IDQ = 250 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
0.8
0.7
0.6
Max Power is 51dBm
at Z = 2.435-4.724i 
 = -0.4055-0.534i
Max Gain is 13.8dB
at Z = 1.759-2.31i 
 = -0.6377-0.3218i
Max PAE is 53.7%
at Z = 1.813-2.877i 
 = -0.5982-0.3892i
0.5
0.4
0.3
0.2
0
Zs(fo) = 10.5-2.53i 
0.1
3.3GHz, Load-pull
-0.1
13.4
-0.2
12.9
53
12.4
51
49
50.8
3
-0.
50.6
50.4
Zo = 10
Pin_ref = 23.8dBm
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
-0
.5
.4
-0
- 10 of 21 -
Power
Gain
PAE
Disclaimer: Subject to change without notice
www.triquint.com
TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18.
Notes:
1. Test Conditions: VDS = 32 V, IDQ = 250 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
0.8
0.7
0.6
Max Power is 50.8dBm
at Z = 2.293-5.249i 
 = -0.3761-0.5875i
Max Gain is 13.5dB
at Z = 1.314-2.805i 
 = -0.6653-0.4129i
Max PAE is 48.4%
at Z = 2.077-3.533i 
 = -0.5256-0.4462i
0.5
0.4
0.3
0.2
0
Zs(fo) = 7.59+2.45i 
0.1
3.5GHz, Load-pull
-0.1
12.5
12
13
-0.2
47.9
45.9
43.9
3
-0.
50.8 50.6
50.4
Zo = 10
Pin_ref = 23.7dBm
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
-0
.5
.4
-0
- 11 of 21 -
Power
Gain
PAE
Disclaimer: Subject to change without notice
www.triquint.com
TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Typical Load-pull Performance – Power Tuned(1, 2)
Vds = 32V, Idq = 250mA, Pulse Width = 100uS, Duty Cycle = 20%, 25°C
Performance measured at device’s reference planes. See page 18.
TGF2819-FS Gain and PAE vs. Pout
TGF2819-FS Gain and PAE vs. Pout
2.7GHz; Vds = 32V; Idq = 250mA; Pulse: 100us, 20%; Power Tuned
45
19
40
15
35
14
30
13
25
60
55
Zs = 8.04-j7.51Ω
Zl = 2.38-j3.55Ω
18
Gain [dB]
Gain [dB]
16
Zs = 7.12-j3.63Ω
Zl = 2.70-j3.40Ω
20
PAE [%]
17
50
50
17
45
16
40
15
35
14
30
13
25
12
20
15
12
20
11
15
11
10
10
10
39 40 41 42 43 44 45 46 47 48 49 50 51 52
10
39 40 41 42 43 44 45 46 47 48 49 50 51 52
Pout [dBm]
Pout [dBm]
TGF2819-FS Gain and PAE vs. Pout
TGF2819-FS Gain and PAE vs. Pout
3.1GHz; Vds = 32V; Idq = 250mA; Pulse: 100us, 20%; Power Tuned
18
45
17
16
40
16
40
15
35
15
35
14
30
14
30
13
25
13
25
12
20
12
20
11
15
11
15
10
10
Zs = 12.1-j8.66Ω
Zl = 2.96-j4.50Ω
10
Gain [dB]
Gain [dB]
3.3GHz; Vds = 32V; Idq = 250mA; Pulse: 100us, 20%; Power Tuned
50
PAE [%]
18
17
PAE [%]
18
2.9GHz; Vds = 32V; Idq = 250mA; Pulse: 100us, 20%; Power Tuned
50
45
Zs = 10.5-j2.53Ω
Zl = 2.44-j4.72Ω
PAE [%]
1.
2.
10
39 40 41 42 43 44 45 46 47 48 49 50 51 52
38 39 40 41 42 43 44 45 46 47 48 49 50 51 52
Pout [dBm]
Pout [dBm]
TGF2819-FS Gain and PAE vs. Pout
3.5GHz; Vds = 32V; Idq = 250mA; Pulse: 100us, 20%; Power Tuned
18
50
17
45
15
40
Zs = 7.59+j2.45Ω
Zl = 2.29-j5.25Ω
35
14
30
13
25
12
20
11
15
10
PAE [%]
Gain [dB]
16
10
38 39 40 41 42 43 44 45 46 47 48 49 50 51 52
Pout [dBm]
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
- 12 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Typical Load-pull Performance – Efficiency Tuned(1, 2)
Vds = 32V, Idq = 250mA, Pulse Width = 100uS, Duty Cycle = 20%, 25°C
Performance measured at device’s reference planes. See page 18.
TGF2819-FS Gain and PAE vs. Pout
TGF2819-FS Gain and PAE vs. Pout
Zs = 7.12-j3.63Ω
Zl (fo)= 1.96-j1.93Ω
Zl (2fo)= 2.37+j13.1Ω
33
35
37
39
41
43
45
47
49
17.0
70
16.5
65
16.0
60
15.5
45
14.0
40
13.5
35
13.0
30
12.5
25
12.0
51
20
40 41 42 43 44 45 46 47 48 49 50 51 52
Pout [dBm]
TGF2819-FS Gain and PAE vs. Pout
TGF2819-FS Gain and PAE vs. Pout
3.3GHz; Vds = 32V; Idq = 250mA; Pulse: 100us, 20%; Efficiency Tuned
3.1GHz; Vds = 32V; Idq = 250mA; Pulse: 100us, 20%; Efficiency Tuned
20
Zs = 12.1-j8.66Ω
Zl(fo) = 1.83-j2.30Ω
Zl(fo) = 1.97+j2.83Ω
70
19
60
65
18
55
60
55
16
50
15
45
14
40
13
35
12
30
11
10
42
43
44
45
46
47
48
49
50
17
Gain [dB]
17
PAE [%]
Gain [dB]
18
50
14.5
Pout [dBm]
19
55
Zs = 8.04-j7.51Ω
Zl (fo)= 1.81-j2.24Ω
Zl(2fo) = 5.92-j23.5Ω
15.0
PAE [%]
65
60
55
50
45
40
35
30
25
20
15
10
5
Gain [dB]
20
19
18
17
16
15
14
13
12
11
10
9
8
2.9GHz; Vds = 32V; Idq = 250mA; Pulse: 100us, 20%; Efficiency Tuned
PAE [%]
Gain [dB]
2.7GHz; Vds = 32V; Idq = 250mA; Pulse: 100us, 20%; Efficiency Tuned
50
Zs = 10.5-j2.53Ω
Zl(fo) = 1.90-j2.85Ω
Zl(2fo) = 1.96+j1.58Ω
16
45
15
40
14
35
13
30
25
12
25
20
11
51
PAE [%]
3.
4.
20
40
41
42
43
44
Pout [dBm]
45
46
47
48
49
50
51
Pout [dBm]
TGF2819-FS Gain and PAE vs. Pout
3.5GHz; Vds = 32V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned
20
Gain [dB]
18
65
60
Zs = 7.61+j2.57Ω
Zl (fo)= 2.11-j3.65Ω
Zl (fo)= 2.39+j9.60Ω
55
17
50
16
45
15
40
14
35
13
30
12
25
11
20
10
PAE [%]
19
15
40 41 42 43 44 45 46 47 48 49 50 51 52
Pout [dBm]
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
- 13 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Performance Over Temperature (1, 2)
Performance measured in TriQuint’s 3.1 GHz to 3.5 GHz Evaluation Board at 3 dB compression.
G3dB vs. Frequency vs. Temperature
P3dB vs. Frequency vs. Temperature
140
16
138
15
-40°C
134
-20°C
132
0°C
25°C
130
45°C
128
65°C
-20°C
0°C
13
25°C
12
45°C
65°C
11
85°C
126
-40°C
14
G3dB [dB]
P3dB [W]
136
85°C
10
124
9
122
8
120
3.1
3.2
3.3
3.4
3.1
3.5
3.2
3.3
3.4
3.5
Frequency [GHz]
Frequency [GHz]
PAE3dB vs. Frequency vs. Temperature
52
51
-40°C
PAE3dB [%]
50
-20°C
0°C
49
25°C
45°C
48
65°C
85°C
47
46
45
3.1
3.2
3.3
3.4
3.5
Frequency [GHz]
Notes:
1. Test Conditions: VDS = 32 V, IDQ = 250 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
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TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Evaluation Board Performance at 25°C (1, 2)
Performance measured in TriQuint’s 3.1 GHz to 3.5 GHz Evaluation Board at 3 dB compression.
PAE vs. Frequency at 25°C
51
138
14.5
51
136
14.0
51
134
13.5
50
132
13.0
50
130
12.5
128
12.0
126
11.5
50
PAE [%]
15.0
Gain [dB]
Power [W]
Output Power and Gain vs. Frequency @ 25°C
140
50
50
124
Power
11.0
49
122
Gain
10.5
49
10.0
49
120
3.1
3.2
3.3
3.4
3.1
3.5
3.2
3.3
3.4
3.5
Frequency [GHz]
Frequency [GHz]
Notes:
1. Test Conditions: VDS = 32 V, IDQ = 250 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
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TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Application Circuit
DC_V
ID=Vg
DC_V
ID=Vd
CAP
ID=C7
CAP
ID=C4
CAP
ID=C6
RES
ID=R2
CAP
ID=C5
IND
ID=L1
PORT
P=1
Z=50 Ohm
IND
ID=L2
CAP
ID=C8
RES
ID=R1
2
1
CAP
ID=C2
CAP
ID=C1
PORT
P=2
Z=50 Ohm
FET
3
CAP
ID=C3
Bias-up Procedure
Bias-down Procedure
Set gate voltage (VG) to -5.0V
Set drain voltage (VD) to 32 V
Turn off RF signal
Slowly increase VG until quiescent ID is 250 mA.
Turn off VD and wait 1 second to allow drain capacitor
dissipation
Apply RF signal
Turn off VG
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
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TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Evaluation Board Layout
Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
C7
C6
C4
R2
L1
R1 C2
C1
C5
L2
C8
C3
Bill of Materials
Reference Design
Value
Qty
Manufacturer
Part Number
R1
C1, C2
C3
L1
R2
C4
L2
C5
C6
C7
C8
100Ω
5.6pF
1.0pF
22nH
10Ω
10uF
12nH
2400pF
1000pF
220uF
15pF
1
2
1
1
1
1
1
1
1
1
1
Vishay/Dale
ATC
ATC
Coilcraft
Vishay/Dale
Murata
Coilcraft
Murata
ATC
United Chemi-Con
ATC
CRCW0603100RJNEA
600S5R6BT
600S1R0BT
0805CS-220X-LB
CRCW060310R0JNEA
C1632X5R0J106M130AC
A04T_L
C08BL242X-5UN-X0T
800B102JT50XT
EMVY500ADA221MJA0G
600S150JT250XT
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
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TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Pin Layout
Reference Planes
Note:
The TGF2819-FS will be marked with the “TGF2819-FS” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot
start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number.
Pin Description
Pin
Symbol
Description
1
VD / RF OUT
Drain voltage / RF Output
2
VG / RF IN
Gate voltage / RF
3
Flange
Source connected to ground
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
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TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Mechanical Information
All dimensions are in inches.
Note:
Unless otherwise noted, all tolerances are +/-0.005 inches. This package is lead-free/RoHS-compliant. The plating material on
the leads is NiAu. It is compatible with both lead-free and tin-lead soldering processes.
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
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TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Product Compliance Information
ESD Sensitivity Ratings
Caution! ESD-Sensitive Device
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260° C
RoHs Compliance
ESD Rating:
Value:
Test:
Standard:
Class 1B
≥ 500 V and < 1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
MSL Rating
 Antimony Free
 TBBP-A (C15H12Br402) Free
The part is rated Moisture Sensitivity Level 3 at 260°C per
 PFOS Free
JEDEC standard IPC/JEDEC J-STD-020.
 SVHC Free
ECCN
US Department of Commerce 3A001.b.3.a
Recommended Soldering Temperature Profile
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
- 20 of 21 -
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TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
For technical questions and application information:
+1.972.994.8465
+1.972.994.8504
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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