IMS2013 / UMS
Update on latest
MMIC product development
Viaud JP : June 5th, 2013
Ref : Product BU
date : June 2013
Outline
United Monolithic Semiconductor at a glance
Technology portfolio & targeted applications
Power amplifier – Latest product release and roadmap
E band chipset – Ongoing developments
Conclusion
Ref : Product BU
date : June 2013
1
UMS at a glance
Founded in 1996 by gathering
&
MMIC activities
HQ, Sales, design center, backback-end production in France (Villebon)
GaAs & GaN front
front--end wafer production in Germany (Ulm)
Design center & Sales office in US (Lowell)
Offering MMIC, packaged MMIC solutions and foundry services
Off the Shelf products
Foundry Services
Turnkey Solutions
• Bare die & packaged products
• Know Good Dies or packages
• Proven solutions up to 100 GHz
• MPW service
• Space qualified technologies
• Accurate models (PDK)
• Development of ASICs
• MCM solutions (integration
(integration))
• Test & Qualification services
ISO 9001, 14001 & TS16949 certified
Ref : Product BU
date : June 2013
2
Technology portfolio and targeted functions / applications
1GHz
2GHz
5GHz
10GHz
20GHz
50GHz
100GHz
PPH25
Power pHEMT
(0.25µm)
DRV / PS / ATT
PPH25X
High Power pHEMT
(0.25µm)
DRV / HPA
PPH15
Power pHEMT
(0.15µm)
DRV / MPA
PPH15X-10(20) High Power pHEMT (linear)
(0.15µm)
DRV / MPA / HPA
PH25
Low Noise pHEMT
(0.25µm)
Converters
PH15
Low Noise pHEMT
(0.15µm)
Multi functions
PH10
Very Low Noise pHEMT
(0.1µm)
LNA
HB20M
VCO InGaP
HB20P(X)
Power InGaP
HBT
High Power InGaP
HB20S
HP07
HBT
MesFet
(0.7µm)
BES100 Schottky Diode Technology
GH50 Very High Power (0.5µm)
Defense
Space
Space & Auto VCO
DRV / HPA
HBT
DRV / ATT
Automotive
Multi functions
Mixer
DRV / HPA
GH25 Very High Power (0.25µm)
Telecom
Ref : Product BU
date : June 2013
3
Power Amplifier : latest product release & roadmap
A portfolio of Power Amplifiers for Defense, Space & telecom markets
Huge experience in developing High Power Amplifiers (IP portfolio)
In 2012, around 10 new products released for Power applications
Strong push to develop and upgrade Power technologies
GaN technologies are mature enough to release competitive products
UMS has decided to expand HPA portfolio (GaAs
(GaAs & GaN
GaN))
First GaN base products are being released
Ref : Product BU
date : June 2013
4
Power Amplifier - Key features
Technology concerns
Design concerns
Selection of the best
technology vs design goal
Key parameter
To be optimized vs applications
Efficiency
To be optimzed
vs system needs
Freq 1 to
80GHz
SMD
Linearity
Package
Power
Amplifier
Trade-off with
Linearity performances
QFN molded or Air cavity,
ceramic package,..
Reliability
No trade-off
Robustness Lot acceptance tests
(Assembly lot)
Gain
control
On chip
power
detector
Trade-off between
performances & cost
Cost
Trade-off between
Performances & optimum
processes
Ref : Product BU
date : June 2013
5
UMS Power Amplifier portfolio – Quick overview
CHZ180 GaN
52dBm Ceramic
In development
100 W
Design freeze /
production
CHZ050 GaN
49dBm
CHA7114-99F
CHA7115-99F
44 dBm GaN
CHA7215-99F
CHZ015 GaN
ASICs
42dBm QFN
42dBm
Bare die
CHA8100-99F
CHA7012-99F
38 to41dBm
10 W
40dBm GaN
QFN
CHA6552-QMG
37dBm+ det
QFN
CHA6250-QFG
34.5dBm QFN
37dBm GaN
QFN
CHA6252-QFG
34dBm QFN
34Bm + det
GaAs / QFN
CHA6558-99F
33.5dBm
CHA6355-BCA
CHA6005-99F
33dBm QFN
32.5dBm
31dBm + det
GaAs / QFN
1W
30dBm
+det QFN
CHA6358-99F
32.5dBm
29dBm
+ det QFN
CHA3080/90
20dBm+det
1
3
6
9
13
15
18
23
26
30
38
Ref : Product BU
42
80 GHz
date : June 2013
6
GaAs HPA portfolio
Ref : Product BU
date : June 2013
7
MMIC / Latest realisation : 15W High Power Amplifier
C Band High Power Amplifier
Application
High Power Amplifier
60
25
55
23
50
21
45
19
40
17
35
15
30
13
25
Pout
11
Gain
20
9
15
7
10
5
4.8
5
5.2
5.4
5.6
5.8
6
6.2
Freqency (GHz)
15W HPA
5
PAE
Linear Gain (dB)
RF bandwidth: 5.2-6 GHz
Linear Gain: 23 dB
Return Losses: 12dB
Output power @ 3dBc: 12W
Associated power added efficiency: 45%
Consumption: 8V, 1.8A/5A
Chip form: 23.6 mm²
Pout (dBm) & PAE (%)
Radar
25
40
Ref : Product BU
Freq
date : June 2013
8
ES-CHA6552-QMG
High Power Amplifier 6-9 GHz
Application
Point to Point
Point to Multipoint
High linearity HPA
RF bandwidth: 6-9 GHz
High Gain: 22 dB
Power at 1dB comp.: 35 dBm
Output IP3: 43 dBm
Consumption: 7 V / 1.8 A
28 lead QFN 6x6mm
Specific features
High Gain
High linearity
On chip Power detector
ES – Q2/13
CHA6250
5
CHA6252
ES
ES--CHA6355
25
40
Ref : Product BU
Freq
date : June 2013
9
ES-CHA6552-QMG
Ref : Product BU
date : June 2013
10
ES-CHA6552-QMG
Ref : Product BU
date : June 2013
11
GaN MMIC / Ku Demonstrator : 25W High Power Amplifier
Application
Test fixture
Radar
Point to point
Technology
UMS 0.25um GaN (GH25)
High Power Amplifier
RF bandwidth: 13-16 GHz
Linear Gain: 11 dB
Output power @ 3dBc: 25 W
Associated power added efficiency: 35%
Operating point : 25V/CW – 30V /Pulsed
Ref : Product BU
date : June 2013
12
GaN MMIC / Ku Demonstrator : 25W High Power Amplifier
Ref : Product BU
date : June 2013
13
High power transistor offer – Catalogue products
Ref : Product BU
date : June 2013
14
General Purpose Transistors / Available products / samples
Power (W)
500
In Evaluation
CHK080A-SRA
CHK080
50
CHK040
CHK025
CHK040A-SOA
CHK025A-S0A
CHK015
In Development
CHK015A-SMA
5
0
2
4
6
8
Frequency (GHz)
Develop
Sampling
Product
Ref : Product BU
date : June 2013
15
Internally-Matched / Quasi MMIC products / Current
Situation & Roadmap
Power (W)
500
180W S-band
180W L-band
CHZ100A
50
50W S-band
CHZ050A
Telecom HPA: C-X-Ku band
15W L-band
5
0
5
10
15
Frequency (GHz)
Evaluation
Demonstrators
Sampling
Ref : Product BU
date : June 2013
16
CHZ180-SEA : L Band HPA / Coming soon – Q4/2013
A fully matched L band device / 1 stage
Developed on 0.5 um GaN process
Optimized for CW & Pulse conditions ( Gain ~ 18 dB)
Output power (dBm) & Efficiency (%)
200 W
T=25°C / Pulsed 25µs, 10%
V=45V / IdQ=1.3 A
55 %
T=25°C / Pulsed 25µs, 10%
V=45V / IdQ=1.3 A
Ref : Product BU
date : June 2013
17
CHZ015A : 15W L Band Driver / Coming soon – Q4/2013
Input matched L band driver / 1 stage
Developed on 0.5 um GaN process
Standard molded QFN package
15W
40%
Ref : Product BU
date : June 2013
18
E-band development
Highlights
UMS is developing a bare die EE-band chipset for radio links
The chipset is developed on a robust 0.1 um process (PH10)
PH10 is being evaluated for space applications
2 MPA and 1 LNA/VGA have been released in 2012
A down converter is under development – Sampling for Q3/Q4
Q3/Q4--2013
Few packaging solutions are being assessed
Ref : Product BU
date : June 2013
19
E-band Products
Bare die version
Function available and in development
IF (I / Q)
ES : Q2 2013
CHA2080-98F
RF Input :
x2
CHX1162-QDG
CHX1191-QDG
LO
71 - 86GHz
IRM
LNA / VGA
Down Converter
xn
n = 2 or 3
CHA2080-98F
CHA3080-98F
CHA3090-98F
71-76GHz
RF Output :
x2
Up / Mixer
VGA / Buffer
81-86 GHz
HPA
I/Q
Product release
Coming soon
Under development
Ref : Product BU
date : June 2013
20
CHA2080-98F
LNA/ VGA E-Band
Application
E Band radio
Millimeter wave Imaging
Radars
Very low noise EE-Band LNA
RF bandwidth: 71- 86 GHz
Linear Gain: 22 dB
Gain dynamic: 12 dB
Noise figure: 3.5 dB
Power at 1dB comp.: 12dBm
Return Loss: > 10dB
Consumption: 3.5V, 75mA
Specific features
Very broadband
Very low noise
High gain dynamic
CHA2080
70
80
90
100
110
Ref : Product BU
Freq
date : June 2013
21
CHA2080-98F
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
Noise Figure (dB)
Gain & Return Losses (dB)
LNA/ VGA E-Band
65
70
75
80
85
90
10
9
8
7
6
5
4
3
2
1
0
74
-2V
-2.4V
-2.6V
76
78
80
-2.8V
82
-3V
84
86
88
90
Frequency (GHz)
Frequency (GHz)
CHA2080
70
80
90
100
110
Ref : Product BU
Freq
date : June 2013
22
CHA3080/90-98F
E-Band Amplifier 71-76 / 81-86 GHz
Application
E Band radio
Opto electronics
Millimeter wave Imaging
Radars
Power Amplifier
RF bandwidth: 71-76GHz
Linear Gain: 16dB
Power at 1dB: 19dBm
OIP3: 25dBm
Integrated power detector
Gain control range: 10dB
Consumption: 3.5V, 0.28A
Specific features
Power detector inside
Gain control via gate biasing
CHA3080
70
CHA3090
80
90
100
110
Ref : Product BU
Freq
date : June 2013
23
CHA3080/90-98F
20
24
18
22
Pout @ 1dB comp
16
20
Pout @ 3dB comp
Linear Gain
14
18
12
16
10
14
CHA3080
8
12
69
70
71
72
73 74 75 76
Frequency (GHz)
77
78
CHA3080
70
79
Output Power (dBm) and Linear Gain (dB)
22
24
20
22
18
20
16
18
P-1dB
14
P-3dB
S21
16
12
14
10
12
8
10
CHA3090
6
8
79
80
81
82
83 84 85
Frequency (GHz)
86
87
88
CHA3090
80
90
100
Ref : Product BU
110
Freq
date : June 2013
Linear Gain (dB)
26
Pout @ 1dB comp & 3dB comp (dBm)
Output Power (dBm) and Linear Gain (dB)
22
Linear Gain (dB)
Pout @ 1dB comp & 3dB comp (dBm)
E Band MPA
Coming soon
E-Band Down Converter 71-86GHz
Targeted performances
Parameter
Sub Harmonic mixer
RF
RF
RF
RF
input frequency
input RL
input P_1dB
input IP3
Conversion Gain
Chip size : 7.6 mm²
Release expected in Q4/2013
Noise Figure
Gain control
LO input frequency
LO input Return loss
LO input power
LOx2 leakage to RF port
Image rejection
IF output frequency
Positive supply Voltage
Positive supply Current
Negative supply Voltage
Max Power consomption
Typ
(T=25°C)
Units
Min
GHz
dB
dBm
dBm
71/81
dB
Notes
76/86
10
-10
IF=10GHz
0
IF=6,10,12GH
z
8
4.5
dB
12
dB
GHz 38.5/34.5
16
dB
0
1
dBm
≤-36/-41
dBm
>20/17.5
dBc
DC
GHz
3.5
V
185
mA
V
-3.4
-2
0.6/.65
W
Measured
Max
IF=10GHz
44/40
3
IF=10GHz
12
-2.1
Gain control
To be Checked
Ref : Product BU
date : June 2013
25
Coming soon
E-Band Down Converter 71-86GHz
On wafer measurements
Gain control Channel I sup
IF=10GHz, PLO=0dBm,
Gx=-2V, GLO-2.25V GRF -2.1 to -3.4V
10
10
8
8
6
6
4
4
GC_I (dB)
GC_Q (dB)
Gain control Channel Q inf
IF=10GHz, PLO=0dBm,
Gx=-2V, GLO-2.25V GRF -2.1 to -3.4V
2
0
2
0
-2
-2
-4
-4
-6
-6
71
72
73
74
Freq RF (GHz)
75
76
81
82
83
84
Freq RF (GHz)
Ref : Product BU
85
date : June 2013
86
26
Under development
E-Band Mixer 71-86GHz
Targeted performances
Parameter
Sub Harmonic mixer
34.5- 44GHz
Chip size : 5.2 mm²
Release expected in Q4/2013
Units
Min
Typ T=25°C
RF freq.
RF input RL
RF input P_1dB
RF input IP3
GHz
dB
dBm
dBm
71/81
IF input RL
IF input P_1dB
IF input IP3
dB
dBm
dBm
12
5
Conversion Gain
Noise Figure
LO input frequency
dB
dB
GHz
-11
13
LO input Return loss
dB
Max
Notes
76/86
10/14
>10
38.5 /34.5
44 /40
12
LO input power
dBm
0
2
LOx2 leakage to RF port
dBm
< -21/-11
Image rejection
IF frequency
dBc
GHz
≥14/16
10
DC
Positive supply Voltage
V
3.5
Positive supply Current
mA
95
Negative supply Voltage
V
-2.2
Max Power consomption
W
0.33
Ref : Product BU
12
date : June 2013
27
IMS2013 / Update on latest MMIC product development
Thank you
Please visit us at our booth # 2220
Ref : Product BU
date : June 2013
28