MSA-0236
Cascadable Silicon Bipolar MMIC Amplifier
Data Sheet
Description
Features
The MSA-0236 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC) housed
in a cost effective, microstrip package. This MMIC is
designed for use as a general purpose 50Ω gain block.
Typical applications include narrow and broad band IF
and RF amplifiers in industrial and military applications.
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth: DC to 2.7 GHz
• 12.0 dB Typical Gain at 1.0 GHz
• Unconditionally Stable (k>1)
• Cost Effective Ceramic Microstrip Package
The MSA-series is fabricated using Avago’s 10 GHz fT,
25 GHz fMAX, silicon bipolar MMIC process which uses
nitride self-alignment, ion implantation, and gold
metallization to achieve excellent performance,
uniformity and reliability. The use of an external bias
resistor for temperature and current stability also allows
bias flexibility.
36 micro-X Package
Typical Biasing Configuration
R bias
VCC > 7 V
RFC (Optional)
4
C block
C block
3
IN
1
OUT
MSA
2
Vd = 5 V
2
MSA-0236 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature[4]
60 mA
325 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance[2,5]:
θjc = 145°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.9 mW/°C for TC > 153°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 25 mA, ZO = 50 Ω
(|S 21| 2)
GP
Power Gain
∆GP
Gain Flatness
f3 dB
3 dB Bandwidth
VSWR
Units
Min.
f = 0.1 GHz
dB
11.5
f = 0.1 to 1.6 GHz
dB
GHz
Input VSWR
f = 0.1 to 3.0 GHz
Typ.
Max.
12.5
13.5
±0.6
±1.0
2.7
1.2:1
Output VSWR
f = 0.1 to 3.0 GHz
NF
50 Ω Noise Figure
f = 1.0 GHz
1.4:1
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
4.5
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
17.0
tD
Group Delay
f = 1.0 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
dB
V
mV/°C
6.5
125
4.5
5.0
5.5
–8.0
Note:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.
Ordering Information
Part Numbers
No. of Devices
Comments
MSA-0236-BLKG
100
Bulk
MSA-0236-TR1G
1000
7" Reel
3
MSA-0236 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 25 mA)
S11
Freq.
GHz
Mag
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.08
.08
.08
.08
.07
.07
.06
.03
.03
.09
.16
.20
.27
.41
S21
S12
S22
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
170
163
147
130
112
91
47
–1
–115
–157
–175
173
136
94
12.6
12.5
12.5
12.4
12.2
12.1
11.6
11.0
10.2
9.3
8.3
7.2
5.2
3.2
4.25
4.23
4.19
4.14
4.09
4.02
3.80
3.53
3.24
2.92
2.60
2.29
1.81
1.44
176
171
161
152
143
134
112
91
75
57
39
23
–6
–33
–18.6
–18.5
–18.4
–18.3
–18.1
–18.0
–17.3
–16.3
–15.4
–15.1
–14.4
–14.1
–13.5
–13.5
.118
.119
.120
.121
.125
.126
.137
.153
.169
.176
.190
.198
.211
.212
2
2
4
4
7
10
11
10
12
8
3
–2
–11
–24
.16
.15
.15
.15
.15
.15
.13
.11
.09
.08
.09
.11
.15
.11
–6
–10
–21
–30
–39
–46
–66
–89
–111
–127
–129
–118
–117
–148
Typical Performance, TA = 25°C
(unless otherwise noted)
12
Gain Flat to DC
I d (mA)
G p (dB)
10
8
6
40
14
TC = +125°C
TC = +25°C
30 T = –55°C
C
12
G p (dB)
14
20
10
8
4
10
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
6
2
0
0.1
0.3 0.5
1.0
3.0
4
0
6.0
0
1
2
FREQUENCY (GHz)
5
15
6
12
10
6
5
P1 dB
5
8
6
4
6.5
I d = 25 mA
6.0
4
4
I d = 18 mA
I d = 25 mA
I d = 40 mA
2
3
2
–55
3
–25
+25
+85
40
7.5
NF (dB)
7
P1 dB (dBm)
NF
6
35
7.0
8
8
30
I d = 40 mA
GP
7
25
Figure 3. Power Gain vs. Current.
12
13
11
20
I d (mA)
Figure 2. Device Current vs. Voltage.
NF (dB)
G p (dB)
4
Vd (V)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 25 mA.
P1 dB (dBm)
3
2
+125
I d = 18 mA
0
0.1
0.2 0.3
5.5
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
4.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 1.0 GHz, Id = 25 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
36 micro-X Package Dimensions
2.15
(0.085)
SOURCE
2.11 (0.083) DIA.
4
DRAIN
3
GATE 1
SOURCE
1.45 ± 0.25
(0.057 ± 0.010)
0.56
(0.022)
2
2.54
(0.100)
0.508
(0.020)
0.15 ± 0.05
(0.006 ± 0.002)
4.57 ± 0.25
0.180 ± 0.010
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2738EN
AV02-0301EN - April 12, 2007