Keysight Technologies
HMMC-5040
20–40 GHz Amplifier
1GG6-4066
Data Sheet
Features
–
–
–
–
Large bandwidth:
20 to 44 GHz typical
21 to 40 GHz specified
High gain: 22 dB typical
Saturated output power:
21 dB typical
Supply bias:
≤ 4.5 volts @ ≤ 300 mA
02 | Keysight | HMMC-5040 20–40 GHz Amplifier – Data Sheet
Description
The Keysight Technologies, Inc. HMMC-5040 is a high-gain broad-band MMIC amplifier
designed for both military applications and commercial communication systems.
This four stage amplifier has input and output matching circuitry for use in 50 ohm
environments. It is fabricated using a PHEMT integrated circuit structure that provides
exceptional broadband performance. The backside of the chip is both RF and DC ground.
This helps simplify the assembly process and reduces assembly related performance
variations and costs. This MMIC is a cost effective alternative to hybrid (discrete-FET)
amplifiers that require complex tuning and assembly processes.
Chip size:
1720 x 760 μm (67.7 x 29.9 mils)
Chip size tolerance:
±10 μm (±0.4 mils)
Chip thickness:
127 ± 15 μm (5 ±0.6 mils)
Pad dimensions:
80 x 80 μm (3.1 x 3.1 mils)
Absolute Maximum Ratings1
Symbol
Parameters/conditions
V1,2-3-4
Drain supply voltges
VG1,2,3-4
Gate supply voltages
IDD
Min
Max
Units
5
volts
0.5
volts
Total drain current
400
mA
Pin
RF input power
21
dBm
Tch
Channel temperature2
160
ºC
TA
Backside Ambient Temperature
–55
+75
ºC
Tst
Storage Temperature
–65
+165
ºC
Tmax
Maximum Assembly Temperature
300
ºC
–3.0
1. Absolute maximum ratings for continuous operation unless otherwise noted.
2. Refer to DC specifications/physical properties table for derating information.
DC Specifications/Physical Properties1
Symbol
Parameters/conditions
Min.
Typ.
Max
Units
VD1,2-3-4
Drain supply operating voltages
20
5.0
5
Volts
ID1
First stage drain supply current (VDD = 4.5 V, VG1 ~= –0.6 V)
55
mA
ID2-3-4
Total drain supply current for stage (VDD = 4.5 V, VGG ~= –0.6 V)
245
mA
VG1,2,3-4
Gate supply operating voltages (IDD ~= 300 mA)
–0.6
VP
Pinch-off voltage (VDD = 4.5 V, IDD ≤ 10 mA)
Øch–bs
Thermal resistance2 (channel-to-backside at Tch = 160°C)
Tch
Channel temperature3 (TA = 75°C, MTTF > 106 hrs, VDD = 4.5 V, IDD = 300 mA)
–2
–1.2
–0.8
62
°C/Watt
160
°C
1. Backside ambient operating temperature TA = 25°C unless otherwise noted.
2. Thermal resistance (°C/Watt) at a channel temperature T (°C) can be estimated using the equation: q(T) =~ 62 ¥ [T(°C)+273] / [160°C+273]
3. Derate MTTF by a factor of two for every 8°C above Tch.
Volts
03 | Keysight | HMMC-5040 20–40 GHz Amplifier – Data Sheet
RF Specifications
(TA = 25°C, Z0 = 50 Ω, VDD = 4.5 V, IDD = 300 mA)
Symbol
Parameters/conditions
BW
Broadband specifications
Min.
Typ.
Max.
Operating bandwidth
21
20-44
40
Gain
Small signal gain
20
Δ Gain
Small signal gain flatness
(RLin)MIN
Minimum input return loss
(RLout)MIN
Minimum output return loss
Isolation
Narrow band performance
Typical
Units
21-24
27-29
37-40
GHz
22
25
23
22
dB
±1.5
±1
±0.75
±0.3
dB
8
10
9
10
14
dB
8
10
10
11
12
dB
Reverse isolation
54
54
54
54
dB
P–1 dB
Output power at 1 dB gain compression
18
18
18
18
dBm
PSAT
Saturated output power at 3 dB compression
21
21
21
21
dBm
20
Applications
The HMMC-5040 broadband amplifier is designed for both military (35 GHz) applications
and wireless communication systems that operate at 23, 28, and 38 GHz. It is also
suitable for use as a frequency multiplier due to excellent below-band input return loss
and high gain.
Biasing and Operation
The recommended DC bias condition is with all drains connected to single 4.5 volt supply
and all gates connected to an adjustable negative voltage supply as shown in Figure 12.
The gate voltage is adjusted for a total drain supply current of typically up to 300 mA.
Figures 4, 5, 8, and 9 can be used to help estimate the minimum drain voltage and current
necessary for a given RF gain and output power.
The second, third, and fourth stage DC drain bias lines are connected internally (Figure
1) and therefore require only a single bond wire. An additional bond wire is needed for the
first stage DC drain bias, VD1.
Only the third and fourth stage DC gate bias lines are connected internally. A total of three
DC gate bond wires are required: one for VG1, one for VG2, and one for the VG3-to-VG4
connection.
The RF input has matching circuitry that creates a 50 ohm DC and RF path to ground. A
DC blocking capacitor should be used in the RF input transmission line. Any DC voltage
applied to the RF input must be maintained below 1 volt. The RF output is AC-coupled.
No ground wires are needed since ground connections are made with plated throughholes to the backside of the device.
The HMMC-5040 can also be used to double, triple, or quadruple the frequency of input
signals. Many bias schemes may be used to generate and amplify desired harmonics within
the device. The information given here is intended to be used by the customer as a starting
point for such applications. Optimum conversion efficiency is obtained with approximately
14 dBm input drive level.
04 | Keysight | HMMC-5040 20–40 GHz Amplifier – Data Sheet
As a doubler, the device can multiply an input signal in the 10 to 20 GHz frequency range
up to 20 to 40 GHz with conversion gain for output frequencies exceeding 30 GHz.
Similarly, 5 to 10 GHz signals can be quadrupled to 20 to 40 GHz with some conversion
loss. Frequency doubling or quadrupling is accomplished by operating the first gain stage
at pinch-off (VG1 = VP =~ 1.2 volts). Stages 2, 3, and 4 are biased for normal amplification.
The assembly diagram shown in Figure 13 can be used.
To operate the device as a frequency tripler the drain voltage can be reduced to
approximately 2.5 volts and the gate voltage can be set at about –0.4 volts or adjusted to
minimize second harmonics if needed. Either of Figures 12 and 13 can be used.
Contact your local Keysight Technologies, INC. sales representative for additional
information concerning multiplier performance and operating conditions.
Assembly Techniques
It is recommended that the RF input and output connections be made using either 500
lines/inch (or equivalent) gold wire mesh. The RF connections should be kept as short as
possible to minimize inductance. The DC bias supply wires can be 0.7 mil diameter gold.
GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects
of storage, handling, and assembly.
MMIC ESD precautions, handling considerations, die attach and bonding methods are
critical factors in successful GaAs MMIC performance and reliability.
Keysight application note, “GaAs MMIC ESD, Die Attach and Bonding Guidelines” (literature
#5991-3484EN) provides basic information on these subjects.
Additional references
Keysight application note, “HMMC-5040 20-40 GHz Amplifier” (5991-3564EN)
Keysight application note, “HMMC-5040 As a 20-40 GHz Multiplier” (5991-3565EN)
Keysight product note, “HMMC-5040 and HMMC-5032 Demo, 20-32 GHz High Gain
Medium Power Amp.” (5991-3571EN)
VD1
In
VG2
VD2
VD3
VD4
Matching
Matching
Matching
Matching
Matching
VG1
50 Ω
VG3
Figure 1. Simplified schematic diagram
VG4
Out
05 | Keysight | HMMC-5040 20–40 GHz Amplifier – Data Sheet
VDD = 4.5 V, I DD = 300 mA
10
Gain
20
22
30
40
18
Isolation
50
14
60
10
20
24
28
32
Frequency (GHz)
Input return loss (dB)
26
Reverse isolation (dB)
Small-signal gain (dB)
0
70
40
36
0
0
5
5
10
15
15
Output
20
250 mA
24
18
100 mA
200 mA
Small-signal gain (dB)
Small-signal gain (dB)
30
300 mA
150 mA
12
Spec. range
(21 - 40 GHz)
6
18
26
34
Frequency (GHz)
42
0.06 dB/°C
15
10
–60
35
30
Gain
38 GHz
30 GHz
35 GHz
25
25 GHz
20
40 GHz
Power
–30
0
+30
+60
Operating temperature (°C)
15
+90
Figure 6. Small-signal gain1 and compressed power2 vs. temperature
18
200 mA
100 mA
150 mA
12
Spec. range
(21 - 40 GHz)
6
16
Noise figure (dB)
30
250 mA
18
26
34
Frequency (GHz)
42
50
20
Compressed output power (dBm)
Small-signal gain (dB)
40
22 GHz
300 mA
Figure 5. Broadband gain as a function of drain current vs. frequency
with VDD = 3 V1
VDD = 4.5 V, I DD = 300 mA at T A = 25°C
20
25
40
36
24
0
10
50
Figure 4. Broadband gain as a function of drain current vs. frequency
with VDD = 4.5 V11
28 GHz
28
32
Frequency (GHz)
VDD = 3 V
30
25
24
20
Figure 3. Typical input and output return loss vs. frequency1
VDD = 4.5 V
35
10
Input
25
20
Figure 2. Typical gain and isolation vs. frequency1
0
10
Output return loss (dB)
VDD = 4.5 V, I DD = 300 mA
30
VDD = 4.5 V, I DD = 300 mA
12
VDD = 2.0 V, I DD = 170 mA
8
4
0
20
VDD = 3.0 V, I DD = 130 mA
24
28
32
Frequency (GHz)
Figure 7. Noise figure vs. frequency
1.Measurements taken on a device mounted in a connectorized package calibrated at the connector terminals
2. Output power into 50 ohms with 2 dBm input power
36
40
19
17
Efficiency
17
15
13
9
13
100
200
Total drain current, I
5
300
DD
19
10
18
5
14
10
Efficiency
17
14
18
Output power (dBm)
22
Figure 10. Gain compression and efficiency characteristics2
1. Output power into 50 ohms with 2 dBm input power
2. Wafer-probed measurements
13
15
9
13
100
200
Total drain current, I
5
300
DD
sat
(mA)
Figure 9. Output power1 and efficiency vs. drain current with VDD = 3 V
0
26
Output power, P –1 dB and P sat (dBm)
15
Power-added efficiency (%)
Gain (dB)
Gain
6
17
VDD = 4.5 V, I DD = 300 mA
20
22
10
21
Power
VDD = 4.5 V, I DD = 300 mA, f = 40 GHz
30
26
25
21
(mA)
Figure 8. Output power1 and efficiency vs. drain current with VDD = 4.5 V
28 GHz
42 GHz
Power-added efficiency at P
21
Power
23 GHz
38 GHz
23
(%)
25
30
26
30
P sat
26
Gain
22
22
18
18
P –1 dB
14
10
20
14
24
28
32
Frequency (GHz)
36
Figure 11. Output power and gain vs. frequency characteristics2
10
40
Small-signal gain (dB)
21
VDD = 3 V
Output power, P sat (dBm)
Output power, P sat (dBm)
23
28 GHz
42 GHz
sat
23 GHz
38 GHz
Power-added efficiency at P
VDD = 4.5 V
(%)
06 | Keysight | HMMC-5040 20–40 GHz Amplifier – Data Sheet
07 | Keysight | HMMC-5040 20–40 GHz Amplifier – Data Sheet
( =~ 100 pF)
Cb
To VDD DC drain supply feed
Gold plated shim (optional)
V D1
V G2
V D2-3-4
RF input
RF output
V G1
V G3-4
VG2 to VG3 jumper-wire
(or use VG2 wire shown in Figure 13)
Cb
To VGG DC gate supply feed
( =~ 100 pF)
Figure 12. Single drain and single gate supply assembly for tripler and standard amplifier applications.
( =~ 100 pF)
Cb
To V DD DC drain supply feed
RF input
To V GG DC gate
supply feed
RF output
Cb
Cb
( =~ 100 pF)
(=~ 100 pF)
optional variation to the VG2 jumper-wire bonding scheme presented in Figure 12.
To V G3-4 DC gate supply feed
08 | Keysight | HMMC-5040 20–40 GHz Amplifier – Data Sheet
70
0
330
700
930
1465
1180
760
660
480
300
95
0
0
0 95
170
1200
Note: All dimensions
in micrometers.
1640
1720
Figure 14. Bonding pad locations.
VDD = 4.5 V
Small-signal gain (dB)
30
300 mA
24
18
250 mA
200 mA
12
Spec. range
(20 - 44 GHz)
6
0
10
18
26
34
Frequency (GHz)
42
50
Figure 15. 1GG6-4066 broadband gain as a function of drain current vs.
frequency with VDD = 4.5 V1
This data sheet contains a variety of
typical and guaranteed performance data.
The information supplied should not be
interpreted as a complete list of circuit
specifications. Customers considering the
use of this, or other Keysight GaAs ICs,
for their design should obtain the current
production specifications from Keysight
Technologies. In this data sheet the
term typical refers to the 50th percentile
performance. For additional information
contact Keysight Technologies at
MMIC_Helpline@keysight.com.
09 | Keysight | HMMC-5040 20–40 GHz Amplifier – Data Sheet
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© Keysight Technologies, 2013 - 2014
Published in USA, August 3, 2014
5989-6449EN
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