HMC413QS16G
v01.1201
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.7 - 2.3 GHz
AMPLIFIERS - SMT
1
Typical Applications
Features
This amplifier is ideal for use as a power/driver
amplifier for 1.7 - 2.3 GHz applications:
Gain: 22 dB
• Cellular
42% PAE
• Mobile
Supply Voltage: +2.75V to +5.0 V
• Wireless Local Loop
Power Down Capability
Saturated Power: +29.5 dBm
Low External Part Count
Functional Diagram
General Description
The HMC413QS16G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifier which operates between
1.7 and 2.3 GHz. The amplifier is packaged in a
low cost, surface mount 16 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external components, the amplifier provides 22 dB of gain,
+29.5 dBm of saturated power at 42% PAE from
a +5.0V supply voltage. The amplifier can also
operate with a 3.6V supply. Vpd can be used for
full power down or RF output power/current control.
Electrical Specifications, TA = +25° C, As a Function of Vs, Vpd = 3.6V
Vs= 3.6V
Vs= 5.0V
Parameter
Min.
Frequency Range
Max.
Min.
1.7 - 2.3
Gain
17
Gain Variation Over Temperature
Typ.
Max.
1.7 - 2.3
21
25
0.025
0.035
18
Units
GHz
22
25
dB
0.025
0.035
dB/ °C
Input Return Loss
6
10
6
10
dB
Output Return Loss
3
8
4
9
dB
Output Power for 1 dB Compression (P1dB)
21
24
24
27
dBm
S a t u r a t e d O u t p u t Po w e r ( P s a t )
23.5
26.5
26.5
29.5
dBm
Output Third Order Intercept (IP3)
32
36
36
40
dBm
5.5
5.5
dB
0.002 / 220
0.002 / 270
mA
7
7
mA
Noise Figure
Supply Current (I c c )
Control Current (Ipd)
1 - 206
Typ.
Vpd = 0V/3.6V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
HMC413QS16G
v01.1201
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.7 - 2.3 GHz
+25 C
+85 C
-40 C
2
2.1 2.2 2.3 2.4 2.5
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1.3 1.4 1.5 1.6 1.7 1.8 1.9
FREQUENCY (GHz)
0
-2
-4
-4
RETURN LOSS (dB)
RETURN LOSS (dB)
0
-6
-8
-10
-12
-14
S11
-16
2
2.1 2.2 2.3 2.4 2.5
2
-14
S11
S22
2
2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
P1dB vs. Temperature, Vs= 5.0V
P1dB (dBm)
P1dB vs. Temperature, Vs= 3.6V
+25 C
+85 C
-40 C
2
-12
-20
1.3 1.4 1.5 1.6 1.7 1.8 1.9
FREQUENCY (GHz)
2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
-8
-10
-18
2.1 2.2 2.3 2.4 2.5
1
-6
-16
S22
-18
P1dB (dBm)
-40 C
Return Loss, Vs= 5.0V
-2
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1.3 1.4 1.5 1.6 1.7 1.8 1.9
+25 C
+85 C
FREQUENCY (GHz)
Return Loss, Vs= 3.6V
-20
1.3 1.4 1.5 1.6 1.7 1.8 1.9
GHz
AMPLIFIERS - SMT
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1.3 1.4 1.5 1.6 1.7 1.8 1.9
GAIN (dB)
GAIN (dB)
MMIC SUB-HARMONICALLY
PUMPED
MIXER Vs=
17 -5.0V
25
GainGaAs
vs. Temperature,
Vs= 3.6V
Gain
vs. Temperature,
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1.3 1.4 1.5 1.6 1.7 1.8 1.9
+25 C
+85 C
-40 C
2
2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1 - 207
HMC413QS16G
v01.1201
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.7 - 2.3 GHz
Psat (dBm)
Psat (dBm)
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1.3 1.4 1.5 1.6 1.7 1.8 1.9
+25 C
+85 C
-40 C
2
2.1 2.2 2.3 2.4 2.5
Power Compression@ 1.9 GHz, Vs= 3.6V
+85 C
-40 C
2
2.1 2.2 2.3 2.4 2.5
46
42
38
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm)
Gain (dB)
PAE (%)
34
30
26
22
18
14
10
42
Pout (dBm)
38
Gain (dB)
PAE (%)
34
30
26
22
18
14
10
6
-10
-8
-6
-4
-2
0
2
4
6
8
2
-12 -10 -8
10
INPUT POWER (dBm)
+25 C
+85 C
-40 C
2
2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
-4
-2
0
2
4
6
8
10
12 14
Output IP3 vs. Temperature, Vs= 5.0V
OIP3 (dBm)
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
1.3 1.4 1.5 1.6 1.7 1.8 1.9
-6
INPUT POWER (dBm)
Output IP3 vs. Temperature, Vs= 3.6V
OIP3 (dBm)
+25 C
Power Compression@ 1.9 GHz, Vs= 5.0V
46
2
-12
GHz
FREQUENCY (GHz)
6
1 - 208
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1.3 1.4 1.5 1.6 1.7 1.8 1.9
FREQUENCY (GHz)
Pout (dBm), GAIN (dB), PAE (%)
AMPLIFIERS - SMT
1
MMIC SUB-HARMONICALLY
PUMPED
MIXER Vs=
17 -5.0V
25
PsatGaAs
vs. Temperature,
Vs= 3.6V
Psat
vs. Temperature,
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
1.3 1.4 1.5 1.6 1.7 1.8 1.9
+25 C
+85 C
-40 C
2
2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
HMC413QS16G
v01.1201
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.7 - 2.3 GHz
Reverse Isolation
GaAs MMIC
PUMPED
25
vs. Temperature,
Vs=SUB-HARMONICALLY
3.6V
Power
DownMIXER
Isolation,17
Vs=- 3.6V
+25 C
+85 C
-40 C
-10
-30
-40
-50
-20
-30
-40
-50
-60
-70
1.3 1.4 1.5 1.6 1.7 1.8 1.9
2
-60
1.3 1.4 1.5 1.6 1.7 1.8 1.9
2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
9
8
8
NOISE FIGURE (dB)
NOISE FIGURE (dB)
10
9
7
6
5
4
+25 C
+85 C
2
1.6
1.7
1.8
7
6
5
4
3
+25 C
2
-40 C
1
+85 C
-40 C
1
1.9
2
2.1
2.2
2.3
2.4
0
1.5
2.5
1.6
1.7
1.8
FREQUENCY (GHz)
32
Gain
2.1
2.2
2.3
2.4
2.5
28
26
26
25
24
24
22
23
20
22
P1dB
18
21
Psat
16
14
4.75
Vcc SUPPLY VOLTAGE (Vdc)
5.25
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
1.5
Gain
P1dB
Psat
Icc
1.75
2
2.25
2.5
2.75
3
3.25
330
310
290
270
250
230
210
190
170
150
130
110
90
70
50
30
Icc (mA)
30
27
P1dB, Psat (dBm)
28
GAIN (dB), P1dB (dBm), Psat (dBm)
34
29
4.25
2
Gain, Power & Supply Current
vs. Vpd, Vcc Fixed @ +3.6V
30
3.75
1.9
FREQUENCY (GHz)
Gain & Power vs. Supply voltage
3.25
2.1 2.2 2.3 2.4 2.5
Noise Figure vs. Temperature, Vs= 5.0V
10
3
2
FREQUENCY (GHz)
Noise Figure vs. Temperature, Vs= 3.6V
GAIN (dB)
AMPLIFIERS - SMT
-20
ISOLATION (dB)
ISOLATION (dB)
-10
20
2.75
1
0
0
0
1.5
GHz
3.5
Vpd (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1 - 209
HMC413QS16G
v01.1201
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.7 - 2.3 GHz
AMPLIFIERS - SMT
1
Absolute Maximum Ratings
Supply Voltage (Vcc)
+5.5 Vdc
Control Voltage (Vpd)
+4.0 Vdc
Input Power (RFin)
+20 dBm
Channel Temperature (Tc)
150 °C
Continuous Pdiss (T= 85 °C)
(derate 24 mW/°C above 85 °C)
1.58 W
Storage Temperature
-65 to +150° C
Operating Temperature
-40 to +85° C
Pin Locations & Outline Drawing
1. MATERIAL:
A. PACKAGE BODY - LOW STRESS INJECTION-MOLDED
PLASTIC, SILICA & SILICONE INPREGNATED.
B. LEADFRAME MATERIAL: COPPER ALLOY
2. PLATING: LEAD-TIN SOLDER PLATE
3. DIMENSIONS ARE IN INCHES (MILLIMETERS)
1 - 210
4. CHARACTERS TO BE HELVETICA MEDIUM, .030 HIGH
USING WHITE INK, LOCATED APPROX AS SHOWN
5. DIMENSION DOES NOT INCLUDE MOLDFLASH
OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH
OF 0.25mm PER SIDE.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
HMC413QS16G
v01.1201
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.7 - 2.3 GHz
Pin Number
Function
Description
1, 2, 4, 5, 7,
8, 9, 10, 13,
15
GND
Ground: Backside of package has exposed metal ground slug that must
be connected to ground thru a shor t path. Vias under the device are
required.
3, 14
Vpd1, Vpd2
Power control pin. For maximum power, this pin should be connected to
3.6V. For 5V operation, a dropping resistor is required . A higher
voltage is not recommended. For lower idle current, this voltage can be
reduced.
6
RF IN
This pin is AC coupled and matched to 50 Ohms from 1.7 to 2.3 GHz.
11, 12
RF OUT
RF output and DC bias for the output stage.
16
Vcc
Power supply voltage for the first amplifier stage. An external bypass
capacitor of 330 pF is required as shown in the application schematic.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1
AMPLIFIERS - SMT
Pin Descriptions
1 - 211
HMC413QS16G
v01.1201
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.7 - 2.3 GHz
AMPLIFIERS - SMT
1
Evaluation PCB for HMC413QS16G
* For 5V operation on Vctl line,
select R1, R2 such that 3.6V is
presented on Pins 3 and 14.
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the
ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and
bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation
circuit board shown is available from Hittite upon request.
List of Material
Item
Description
J1 - J2
PC Mount SMA RF Connector
J3
2 mm DC Header
C1
2.2 pF Capacitor, 0603 Pkg.
C2
10 pF Capacitor, 0402 Pkg.
C3 - C4
330 pF Capacitor, 0603 Pkg.
C5
2.2 µF Capacitor, Tantalum
U1
HMC413QS16G Amplifier
PCB*
105018 Eval Board
* Circuit Board Material: Rogers 4350
1 - 212
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
HMC413QS16G
v01.1201
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.7 - 2.3 GHz
HMC413QS16G Application Circuit
AMPLIFIERS - SMT
1
TL1
TL2
TL3
Impedance
50 Ohm
50 Ohm
50 Ohm
Length
0.1"
0.15"
0.1"
* For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and 14.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1 - 213