RH1814M
Quad 3mA, 100MHz, 750V/µs
Operational Amplifier
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
The RH1814 is a quad, low power, high speed, very high slew
rate operational amplifier with excellent DC performance,
reduced supply current, lower input offset voltage, lower
input bias current and higher DC gain than other devices
with comparable bandwidth. The circuit topology is a voltage feedback amplifier with the slewing characteristics of
a current feedback amplifier.
The output drives a 100Ω load to ±3.35V with ±5V supplies.
On a single 5V supply, the output swings from 1.1V to 3.7V
with a 100Ω load connected to 2.5V. The amplifiers are
stable with a 1000pF capacitive load making them useful
in buffer and cable driver applications.
(Note 1)
Supply Voltage....................................................... 12.6V
Differential Input Voltage (Note 2) ........................... ±6V
Input Voltage ............................................................ ±VS
Output Short-Circuit Duration (Note 3) ........... Indefinite
Operating Temperature Range ............... –55°C to 125°C
Storage Temperature Range................... –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................... 300°C
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
The RH1814 is manufactured on Linear Technology’s
advanced low voltage complementary bipolar process.
PACKAGE INFORMATION
BURN-IN CIRCUIT
TOP VIEW
50k
5.5V
100Ω
RH1814M
50k
OUT A
1
14
OUT D
–IN A
2
13
–IN D
+IN A
3
12
+IN D
V+
4
11
V–
+IN B
5
10
+IN C
–IN B
6
9
–IN C
OUT B
7
8
OUT C
W PACKAGE
14-LEAD FLATPAK GLASS SEALED
–5.5V
RH1814M BI
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RH1814M
TABLE 1: ELECTRICAL CHARACTERISTICS
(Pre-Irradiation)
VS = ±5V, VCM = 0V, unless otherwise noted.
MIN
SYMBOL PARAMETER
CONDITIONS
VOS
Input Offset Voltage
(Note 4)
∆VOS
∆Temp
Average Tempco of Offset
Voltage
(Note 5)
IOS
Input Offset Current
IB
Input Bias Current
en
in
Input Noise Voltage Density fO = 10kHz
Input Noise Current Density fO = 10kHz
RIN
Input Resistance
VCM = ±3.5V
AVOL
Large-Signal Voltage Gain
VO = ±3V, RL ≥ 500Ω
VO = ±3V, RL ≥ 100Ω
1.5
1
Input Voltage Range
Guaranteed by CMRR
±3.5
CMRR
Common Mode Rejection
Ratio
VCM = ±3.5V
75
PSRR
Power Supply Rejection
Ratio
VS = ±2V to ±5.5V
Channel Separation
VO = ±3V, RL = 100Ω
VOUT
Output Voltage Swing
IOUT
TA = 25°C
TYP
MAX
1.5
SUBGROUP
–55°C ≤ TA ≤ 125°C
MIN
TYP
MAX
1
4
SUBGROUP
2, 3
30
UNITS
mV
µV/°C
400
1
1000
2, 3
±4
1
±10
2, 3
nA
µA
8
nV/√Hz
1
pA/√Hz
3
MΩ
4
4
0.7
0.5
5, 6
V/mV
V/mV
±3.5
V
1
70
dB
78
1
72
82
1
78
RL = 500Ω, 30mV Overdrive
RL = 100Ω, 30mV Overdrive
±3.8
±3.35
4
4
±3.4
±3
Maximum Output Current
VOUT = ±3V, 30mV Overdrive
±40
±20
mA
ISC
Output Short-Circuit
Current
VOUT = 0V, 1V Overdrive
(Note 3)
±75
±40
mA
IS
Supply Current
per Amplifier
3.6
1
2, 3
dB
dB
5, 6
5, 6
6.5
2, 3
V
V
mA
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RH1814M
TABLE 2: ELECTRICAL CHARACTERISTICS
(Post-Irradiation)
VS = ±5V, VCM = 0V, TA = 25°C, unless otherwise noted.
SYMBOL PARAMETER
VOS
Input Offset Voltage
IOS
Input Offset Current
IB
Input Bias Current
Input Voltage Range
CONDITIONS
10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)
MIN MAX MIN
MAX MIN MAX MIN MAX MIN
MAX
(Note 4)
2
4
4
4
mV
500
500
750
1000
1500
nA
±15
µA
±5
Guaranteed by CMRR
±7.5
±10
±3.5
±3.5
±3.5
±3.5
V
73
73
62
62
62
dB
77
75
65
65
65
dB
1.4
0.9
1.3
0.8
1.0
0.6
0.8
0.5
0.6
0.4
V/mV
V/mV
±3.8
±3.30
±3.7
±3.25
±3.6
±3.15
±3.5
±3.05
Common Mode Rejection VCM = ±3.5V
Ratio
PSRR
Power Supply Rejection
Ratio
AVOL
Large-Signal Voltage Gain VO = ±3V, RL = 500Ω
VO = ±3V, RL = 100Ω
VOUT
Maximum Output Voltage RL = 500Ω, 30mV Overdrive ±3.8
Swing
RL = 100Ω, 30mV Overdrive ±3.35
IS
Supply Current
per Amplifier
±5
±3.5
CMRR
VS = ±2V to ±5.5V
UNITS
2
3.6
3.6
3.6
3.6
V
V
3.6
mA
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RH1814M
TABLE 1: ELECTRICAL CHARACTERISTICS
(Pre-Irradiation)
VS = 5V, OV, VCM = 2.5V, unless otherwise noted.
MIN
TA = 25°C
TYP
MAX
SUBGROUP
–55°C ≤ TA ≤ 125°C
MIN
TYP
MAX
SUBGROUP
UNITS
SYMBOL PARAMETER
CONDITIONS
VOS
Input Offset Voltage
(Note 4)
∆VOS
∆Temp
Average Tempco of Offset
Voltage
(Note 5)
IOS
Input Offset Current
IB
Input Bias Current
en
in
Input Noise Voltage Density fO = 10kHz
Input Noise Current Density fO = 10kHz
RIN
Input Resistance
VCM = 1.5V to 3.5V
AVOL
Large-Signal Voltage Gain
VO = 1.5V to 3.5V, RL ≥ 500Ω
VO = 1.5V to 3.5V, RL ≥ 100Ω
1
0.7
Input Voltage Range
(Positive)
Guaranteed by CMRR
3.5
Input Voltage Range
(Negative)
Guaranteed by CMRR
CMRR
Common Mode Rejection
Ratio
VCM = 1.5V to 3.5V
73
1
68
PSRR
Power Supply Rejection
Ratio
VS = ±2V to ±5.5V
78
1
72
Channel Separation
VOUT = 1.5V to 3.5V, RL = 100Ω
81
1
77
VOUT
Output Voltage Swing
(Positive)
RL = 500Ω, 30mV Overdrive
RL = 100Ω, 30mV Overdrive
3.9
3.7
4
4
3.5
3.3
Output Voltage Swing
(Negative)
RL = 500Ω, 30mV Overdrive
RL = 100Ω, 30mV Overdrive
IOUT
Maximum Output Current
VOUT = 1.5V to 3.5V,
30mV Overdrive
±25
±15
mA
ISC
Output Short-Circuit
Current
VOUT = 2.5V, 1V Overdrive
(Note 3)
±55
±30
mA
IS
Supply Current
per Amplifier
2
1
5
2, 3
30
mV
µV/°C
400
1
1000
2, 3
±4
1
±10
2, 3
nA
µA
8
nV/√Hz
1
pA/√Hz
3
MΩ
4
4
0.5
0.3
5, 6
3.5
1.5
4
V
1.5
1.1
1.3
V
dB
2, 3
dB
dB
1.3
1.5
1
V/mV
V/mV
7.5
5, 6
5, 6
V
V
5, 6
V
V
2, 3
mA
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RH1814M
TABLE 2: ELECTRICAL CHARACTERISTICS
VS = 5V, OV, VCM = 2.5V, TA = 25°C, unless otherwise noted.
SYMBOL PARAMETER
VOS
Input Offset Voltage
IOS
Input Offset Current
IB
CONDITIONS
10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)
MIN MAX MIN
MAX MIN MAX MIN MAX MIN
MAX UNITS
(Note 4)
Input Bias Current
Input Voltage Range
Negative
Positive
Guaranteed by CMRR
3.5
CMRR
Common Mode Rejection VCM = 1.5V to 3.5V
Ratio
PSRR
Power Supply Rejection
Ratio
AVOL
VOUT
2.5
2.5
4.5
4.5
4.5
mV
500
500
750
1000
1500
nA
±5
±5
±7.5
±10
±15
µA
1.5
V
V
1.5
3.5
1.5
3.5
1.5
3.5
1.5
3.5
71
71
60
60
60
dB
77
75
65
65
65
dB
Large-Signal Voltage Gain VO = 1.5V to 3.5V, RL = 500Ω
VO = 1.5V to 3.5V, RL = 100Ω
0.9
0.6
0.8
0.55
0.6
0.45
0.5
0.40
0.4
0.35
V/mV
V/mV
Maximum Output Voltage RL = 500Ω, 30mV Overdrive
Swing (Positive)
RL = 100Ω, 30mV Overdrive
3.9
3.7
3.9
3.65
3.8
3.55
3.7
3.45
3.6
3.40
V
V
VS = ±2V to ±5.5V
Maximum Output Voltage RL = 500Ω, 30mV Overdrive
RL = 100Ω, 30mV Overdrive
Swing (Negative)
IS
(Post-Irradiation)
Supply Current
per Amplifier
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Differential inputs of ±6V are appropriate for transient operation
only, such as during slewing. Large sustained differential inputs can cause
excessive power dissipation and may damage the part.
1.1
1.3
1.1
1.35
1.15
1.4
1.2
1.45
1.3
1.5
4
4
4
4
4
V
V
mA
Note 3: A heat sink may be required to keep the junction temperature
below absolute maximum when the output is shorted indefinitely.
Note 4: Input offset voltage is pulse tested and is exclusive of warm-up
drift.
Note 5: This parameter is not 100% tested.
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RH1814M
TABLE 2: ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUP
Final Electrical Test Requirements (Method 5004)
1*,2,3,4,5,6
Group A Test Requirements (Method 5005)
1,2,3,4,5,6
Group B and D for Class S
End Point Electrical Parameters (Method 5005)
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after
burn-in divided by the total number of devices submitted for burn-in in
that lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
1,2,3
* PDA applies to subgroup 1. See PDA Test Notes.
TOTAL DOSE BIAS CIRCUIT
10k
5V
–
2.5V
10k
+
–5V
RH1814M TDBC
TYPICAL PERFORMANCE CHARACTERISTICS
Supply Current (Per Amplifier)
Positive Slew Rate
4.0
600
3.0
2.5
10
100
TOTAL DOSE KRAD (Si)
1000
RH1814M G01
NEGATIVE SLEW RATE (V/µs)
3.5
1
VS = ±5V
RL = 10k
VS = ±5V
RL = 10k
POSITIVE SLEW RATE (V/µs)
SUPPLY CURRENT (mA)
VS = ±5V
RL = 10k
2.0
Negative Slew Rate
600
500
400
300
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1814M G02
500
400
300
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1814M G03
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RH1814M
TYPICAL PERFORMANCE CHARACTERISTICS
Input Offset Voltage
Input Bias Current
7
VS = ±5V
VCM = 0V
0.5
0
–0.5
–1.0
5
4
3
2
1
10
100
TOTAL DOSE KRAD (Si)
0
1000
1
10
100
TOTAL DOSE KRAD (Si)
RH1814M G04
1000
Open-Loop Gain
VS = ±5V
RL = 10k
VOUT = ±3V
68
66
64
62
60
58
56
1
1.0
0.5
0
–0.5
–1.0
1
10
100
TOTAL DOSE KRAD (Si)
RH1814M G06
10
100
TOTAL DOSE KRAD (Si)
90
85
80
75
70
65
1000
VS = ±5V
1.5V ≤ VCM ≤ 3.5V
95
1
10
100
TOTAL DOSE KRAD (Si)
RH1814M G07
Gain-Bandwidth Product
120
VS = ±2V TO ±5.5V
100
95
90
85
80
75
70
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1814M G08
Power Supply Rejection Ratio
105
1000
Common Mode Rejection Ratio
100
COMMON MODE REJECTION RATIO (dB)
70
VS = ±5V
VCM = 0V
RH1814M G05
GAIN BANDWIDTH PRODUCT (MHz)
1
OPEN-LOOP GAIN (dB)
–1.5
INPUT OFFSET CURRENT (µA)
INPUT BIAS CURRENT (µA)
1.0
Input Offset Current
1.5
VS = ±5V
VCM = 0V
6
POWER SUPPLY REJECTION RATIO (dB)
INPUT OFFSET VOLTAGE (mV)
1.5
1000
VS = ±5V
RL = 10k
110
100
90
80
1
10
100
TOTAL DOSE KRAD (Si)
RH1814M G09
1000
RH1814M G11
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Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
7
RH1814M
REVISION HISTORY
REV
DATE
DESCRIPTION
PAGE NUMBER
A
02/10
Changes to Electrical Characteristics
3, 4, 5
B
12/10
Revised section headers
3, 4, 5
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Linear Technology Corporation
I.D. No. 66-11-1814 LT 1210 REV B • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
 LINEAR TECHNOLOGY CORPORATION 2004