Agilent 1GC1-8053
0–65 GHz Integrated Diode Limiter
TC231
Data Sheet
Features
• Two Independent Limiters for
Single–ended or Differential
Signals
• Can be Biased for Adjustable
Limit Level and Signal Detection
• Minimum Group Delay
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
Description
The TC231 is a 65 GHz integrated diode limiter that can be
used to protect sensitive RF
circuits from excess RF power,
DC transients, and ESD. Two
limiters are provided on–chip
to enable single–ended or differential use.
The TC231 can be used as an
unbiased 10 or 18 dBm passive
limiter; it also provides adjustable limiting and peak power
detection capabilities.
The TC231 has been designed
for minimal insertion loss.
Group delay characteristics
have been optimized to allow
use in millimeter–wave analog
and gigabit digital designs.
840 × 940 µm (33.1 × 37.0 mils)
±10 µm (± 0.4 mils)
127 ± 15 µm (5.0 ± 0.6 mils)
80 × 80 µm (3.2 × 3.2 mils) DC
80 × 160 µm (3.2 × 6.3 mils) RF
Absolute Maximum Ratings[1],[2]
Symbol Parameters/Conditions
Pin
Ibias
Vbias
Vrev
Ifwd
Vin
Iin
Tbs
Tj
Tmax
Tstg
Notes:
Min.
Max. Units
A & C Grounded
+17
dBm
DGND Grounded
Continuous Forward Current into A1, A2, C1, C2,
DGND1–4
Voltage at A1, A2, C1, C2, DGND1–4
Reverse Bias Voltage on Each Diode
Forward Bias Current on Each Diode
Voltage at IN1, IN2, OUT1, OUT2
Current into IN1, IN2, OUT1, OUT2
Maximum Backside Temperature
Diode Junction Temperature
Maximum Assembly Temperature[3]
Storage Temperature
+19
dBm
36
mA
+5
8
36
+5
80
85
170
300
165
V
V
mA
V
mA
°C
°C
°C
°C
Continuous RF Power
–5
–5
–80
–65
1. Operation in excess of any one of these conditions may result in permanent damage to this
device. If you need to operate higher, please contact WPTC Marketing.
2. Calculated using backside (ambient) temperature of 85°C, unless otherwise noted.
3. Sixty–second maximum.
1
DC Specifications/Physical Properties[1]
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
Vfwd_A,
Vfwd_C
Limiting Diode Forward Voltage @ 0.1 mA
0.6
0.64
0.7
V
Vfwd_D
2–Diode Bias Stack Forward Voltage @ 0.1 mA
1
1.15
1.3
V
Rs_A,
Rs_C
Limiting Diode Series Resistance @ 15 mA
Including 2–ohm Resistor
7
12
17
Ω
I_A, I_C
Limiting Diode Reverse Leakage Current @ –1V
0.1
1
uA
RS_Series
Notes:
Through Series Resistance
1.2
Ω
1. Measured on wafer with Tchuck = 25°C, unless otherwise noted.
RF Specifications[1]
Symbol
S11,S22
Parameters/Conditions
Reflection
S21,S12
Through Loss
∆τd
Group Delay Flatness
P–1dB
1 dB Gain Compression
SHI
Second Harmonic Intercept
THI
Third Harmonic Intercept
TOI
Third Order Intercept
Min.
10 GHz
30 GHz
50 GHz
65 GHz
10 GHz
30 GHz
50 GHz
65 GHz
26.5 GHz
50 GHz
65 GHz
A&C Grounded
DGND Grounded
A&C Biased
ƒ0 = 5 GHz, A & C or
DGND Grounded
ƒ0 = 5 GHz, A&C or
DGND Grounded
ƒ1 = 5 GHz, ƒ2 = 5.25 GHz,
A&C or DGND Grounded
–0.4
–0.75
–1.7
Typ.
Max.
–24
–20
–12
–10
–0.2
–0.3
–1.3
–2
±0.5
±0.75
±1.0
10
18
Voltage Variable
–20
–15
–8
Units
dB
dB
pS
dBm
70
dBm
32
dBm
32
dBm
Notes:
1. Measured on wafer with Tchuck = 25°C. Numbers shown are over 0–50 GHz band unless otherwise specified.
ESD Specifications[1]
Symbol
Parameters/Conditions
ESD
ESD No Damage
Min.
Typ.
Max.
Units
A&C Grounded
2400
V
DGND Grounded
2800
V
Notes:
1. Using Human Body Model as ESD generator. Circuit equivalent is 100 pF, 1500Ω.
2
TC231/rev.3.0
Applications
The TC231 can be used as a protection circuit for ESD and DC
transients, as a Reverse Power
Protection (RPP) device, or as
an RF limiter with optional power detection.
The different modes of use require different attachments.
These are described under Operation.
Biasing
None required for traditional
operation. For adjustable limiting, the bias voltage will set the
limiting value as described under Operation.
Operation
The TC231 has three primary
modes of operation. 10 dBm and
18 dBm limiting can be done
with no active bias required. See
Figures 1(a) & 1(b). Both of
these uses will provide ESD protection at the limiting value. For
adjustable limiting and detection, the bias should be applied
as shown in Figure 1(c). Adjustable limiting is achieved by setting the A pin to a DC voltage
~0.7 volts higher than the desired minimum voltage, and the
C pin to a DC voltage ~0.7 volt
lower than the desired maximum voltage.
If the voltage is not forced, the
capacitor will function as a peak
detector.
As an ESD protection device,
the TC231 can protect ESD sensitive components. The degree
of protection depends on the
protected components characteristics. ESD damage level for
the TC231 by itself is around
2400V using the human body
model.
Assembly Techniques
See Figure 11 for bond pad locations.
Epoxy die–attach using a conductive epoxy and solder die–
attach using a fluxless gold–tin
solder preform are both suitable
assembly methods. Gold wire
Not Biased
DGND1
A1
C1
2
2
2
DGND3
DGND2
OUT2
IN2
DGND1
C2
10 dBm Limiting
(a)
DGND4
A1
C1
2
2
Biased
OUT1
IN2
OUT2
DGND3
2
2
A2
C2
DGND1
DGND2
IN1
2
A2
Diodes are ESD sensitive. ESD
preventive measures must be
employed in all aspects of storage, handling and assembly.
ESD precautions, handling considerations, and die attach and
bonding methods are critical
factors in successful diode performance and reliability. Please
refer to Agilent Application
Note #54, "GaAs MMIC ESD, Die
Attach and Bonding Guidelines"
for additional information on
these subjects.
Not Biased
OUT1
IN1
mesh bonds (500–line/inch or
equivalent) should be used at
the RF input and output ports.
These bonds must be kept as
short as possible to minimize
parasitic inductance. DC bias
may be supplied through conventional 0.7–mil gold wire
bonds. In both cases, thermosonic wedge bonding is recommended.
A1
C1
2
2
DGND2
IN1
OUT1
IN2
OUT2
DGND3
2
2
A2
C2
DGND4
DGND4
18 dBm Limiting
(b)
Adjustable Limiting & Detection
(c)
Figure 1.
TC231 Functional Topologies
TC231/rev.3.0
3
0.0
-0.5
3 mil mesh
-1.0
S21 (dB)
-1.5
-2.0
No mesh
-2.5
OV/OV
–2V/+2V OV/OV
–2V/+2V
-3.0
-3.5
-4.0
-4.5
-5.0
0.00
10.00
20.00
30.00
40.00
50.00
60.00
70.00
Frequency (GHz)
Figure 2. TC231 S21
Note: Both no mesh (simulated) and 3 mil mesh (measured) input and output connections shown.
Plots for A and C of OV/OV and –2V/+2V are included.
0
-5
OV/OV –2V/+2V
No mesh
-10
S11 (dB)
-15
-20
OV/OV
–2V/+2V
3 mil mesh
-25
-30
-35
-40
-45
-50
0.00
10.00
20.00
30.00
40.00
50.00
60.00
70.00
Frequency (GHz)
Figure 3. TC231 S11
0
-5
–2V/+2V
OV/OV
No mesh
-10
S22 (dB)
-15
-20
–2V/+2V OV/OV
-25
-30
3 mil mesh
-35
-40
-45
-50
0.00
10.00
20.00
30.00
40.00
50.00
60.00
70.00
Frequency (GHz)
Figure 4. TC231 S22
16
15
3 mil mesh
Group Delay (ps)
14
OV/OV
–2V/+2V
13
12
11
10
9
OV/OV
No mesh
8
7
6
0.00
–2V/+2V
10.00
20.00
30.00
40.00
50.00
60.00
70.00
Frequency (GHz)
Figure 5. TC231 Group Delay
4
TC231/rev.3.0
25
20
Pinc(-1dB)
A&C -2/+2V
15
DGND grounded
A&C -1/+1V
10
A&C 0/0V
5
0
0
5
10
15
20
25
Frequency (GHz)
Figure 6.
TC231 Pinc(–1dB) vs. Frequency
0
-1
-2/+2V
-2
-3
Gain (dB)
1 GHz
-1/+1V
0/0V
5 GHz
-4
10 GHz
-5
15 GHz
-6
20 GHz
-7
25 GHz
-8
-9
-10
0
5
10
15
20
25
30
Pinc (dBm )
Figure 7.
TC231 Gain vs. Pinc, A&C Biased
0
-1
DGND
grounded
-2
1 GHz
Gain (dB)
-3
5 GHz
A&C
grounded
-4
-5
10 GHz
15 GHz
-6
20 GHz
-7
25 GHz
-8
-9
-10
0
5
10
15
20
25
30
Pinc (dBm )
Figure 8.
TC231 Gain vs. Pinc, Not Biased
TC231/rev.3.0
5
-20
A&C Grounded
Second Harmonic Output (dBc)
-30
-40
-50
-60
-70
-80
DGND Grounded
-90
-100
-10
-5
0
5
10
15
20
Input Power (dBm)
Figure 9.
Typical Second Harmonic Performance
@ ƒ0 = 5 GHz
-10
Third Harmonic Output (dBc)
-20
-30
-40
-50
-60
-70
-80
-90
-100
-10
-5
0
5
10
15
20
Input Power (dBm)
Figure 10.
Typical Third Harmonic Performance
@ ƒ0 = 5 GHz
-10
-20
-30
IM3 (dBc)
-40
-50
-60
-70
-80
-90
-100
-10
-5
0
5
10
15
Input Power @ 5GHz (dBm)
Figure 11.
Typical Third Order Intermodulation
@ ƒ1 = 5 GHz, ƒ2 = 5.25 GHz
6
TC231/rev.3.0
Figure 12.
TC231 Sample Bonding & Assembly Options
TC231/rev.3.0
7
1.00E+00
1.00E-01
I (A)
1.00E-02
24 deg C
1.00E-03
70 deg C
1.00E-04
1.00E-05
1.00E-06
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
V (V)
Figure 13.
TC231 Limiter I–V, A & C Pads Grounded
Tbackside 24° & 70°
Figure 14.
Bond Pay Layout
This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications.
Customers considering the use of this, or other WPTC GaAs ICs, for their design should obtain the current production specifications from WPTC Marketing. In this data sheet
the term typical refers to the 50th percentile performance. For additional information contact WPTC Marketing at 707-577-4482.
8
TC231/rev.3.0