LTC5543
2.3GHz to 4GHz
High Dynamic Range
Downconverting Mixer
DESCRIPTION
FEATURES
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Conversion Gain: 8.4dB at 2500MHz
IIP3: 24.5dBm at 2500MHz
Noise Figure: 10.2dB at 2500MHz
17.5dB NF Under +5dBm Blocking
High Input P1dB
3.3V Supply, 660mW Power Consumption
Shutdown Pin
50Ω Single-Ended RF and LO Inputs
LO Inputs 50Ω Matched when Shutdown
High Isolation LO Switch
0dBm LO Drive Level
High LO-RF and LO-IF Isolation
Small Solution Size
20-Lead (5mm × 5mm) QFN package
The LTC®5543 is part of a family of high dynamic range, high
gain passive downconverting mixers covering the 600MHz to
4GHz frequency range. The LTC5543 is optimized for 2.3GHz
to 4GHz RF applications. The LO frequency must fall within
the 2.4GHz to 3.6GHz range for optimum performance. A
typical application is a LTE or WiMAX receiver with a 2.3GHz
to 2.7GHz RF input and high-side LO.
The LTC5543 is designed for 3.3V operation, however; the
IF amplifier can be powered by 5V for the highest P1dB.
An integrated SPDT LO switch with fast switching accepts
two active LO signals, while providing high isolation.
APPLICATIONS
The LTC5543’s high conversion gain and high dynamic
range enable the use of lossy IF filters in high-selectivity
receiver designs, while minimizing the total solution cost,
board space and system-level variation.
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High Dynamic Range Downconverting Mixer Family
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Wireless Infrastructure Receivers
(LTE, WiMAX, WCS)
Point-To-Point Microwave Links
High Dynamic Range Downmixer Applications
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
PART#
RF RANGE
LO RANGE
LTC5540
600MHz –1.3GHz
700MHz – 1.2GHz
LTC5541
1.3GHz – 2.3GHz
1.4GHz – 2.0GHz
LTC5542
1.6GHz – 2.7GHz
1.7GHz – 2.5GHz
LTC5543
2.3GHz – 4GHz
2.4GHz – 3.6GHz
TYPICAL APPLICATION
Wideband Receiver
190MHz
SAW
1nF
VCCIF
3.3V or 5V
1μF
22pF
IF
AMP
1nF
150nH
150nH
+
Wideband Conversion Gain, IIP3
and NF vs IF Output Frequency
190MHz
BPF
9.0
ADC
2.7pF
LTC5543
IF
1.2nH
LNA
LO2
RF
ALTERNATE LO FOR
FREQUENCY-HOPPING
LO
0.8pF
SYNTH 2
GC (dB)
RF
2500MHz
TO
2570MHz
IMAGE
BPF
IIP3
fLO = 2725MHz
8.8 PLO = 0dBm
RF = 2535 ±35MHz
8.7
TEST CIRCUIT IN FIGURE 1
8.6
22
20
18
8.5
8.4
16
GC
14
8.3
2.7pF
SHDN
(0V/3.3V)
BIAS
SHDN
VCC2
VCC 3.3V
1μF
VCC1
22pF
VCC3
LO1
LOSEL
LO SELECT
(0V/3.3V)
12
8.2
SYNTH 1
LO
2725MHz
5543 TA01
24
NF
8.1
8.0
155
IIP3 (dBm), SSB NF (dB)
IF –
IF
26
8.9
10
8
165 175 185 195 205 215
IF OUTPUT FREQUENCY (MHz)
6
225
5543 TA02
5543f
1
LTC5543
ABSOLUTE MAXIMUM RATINGS
PIN CONFIGURATION
(Note 1)
IFGND
GND
IF–
IFBIAS
IF+
TOP VIEW
Mixer Supply Voltage (VCC1, VCC2)...........................3.8V
LO Switch Supply Voltage (VCC3).............................3.8V
IF Supply Voltage (IF+, IF –) ......................................5.5V
Shutdown Voltage (SHDN) ................–0.3V to VCC +0.3V
LO Select Voltage (LOSEL)................–0.3V to VCC +0.3V
LO1, LO2 Input Power (2GHz to 4GHz) ..................9dBm
LO1, LO2 Input DC Voltage ....................................±0.5V
RF Input Power (2GHz to 4GHz) ...........................15dBm
RF Input DC Voltage ............................................... ±0.1V
Operating Temperature Range .................–40°C to 85°C
Storage Temperature Range .................. –65°C to 150°C
Junction Temperature (TJ) .................................... 150°C
20 19 18 17 16
15 LO2
NC 1
14 VCC3
RF 2
21
GND
CT 3
13 GND
7
8
9 10
LOSEL
GND
6
VCC1
11 LO1
VCC2
12 GND
SHDN 5
LOBIAS
GND 4
UH PACKAGE
20-LEAD (5mm s 5mm) PLASTIC QFN
TJMAX = 150°C, θJA = 34°C/W, θJC = 3°C/W
EXPOSED PAD (PIN 21) IS GND, MUST BE SOLDERED TO PCB
ORDER INFORMATION
LEAD FREE FINISH
TAPE AND REEL
PART MARKING
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LTC5543IUH#PBF
LTC5543IUH#TRPBF
5543
20-Lead (5mm x 5mm) Plastic QFN
–40°C to 85°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
AC ELECTRICAL CHARACTERISTICS
VCC = 3.3V, VCCIF = 3.3V, SHDN = Low, TA = 25°C, PLO = 0dBm,
unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4)
PARAMETER
CONDITIONS
MIN
LO Input Frequency Range
RF Input Frequency Range
Low-Side LO
High-Side LO
TYP
MAX
UNITS
2400 to 3600
MHz
2400 to 4000
2200 to 3200
MHz
MHz
5 to 600
MHz
IF Output Frequency Range
Requires External Matching
RF Input Return Loss
ZO = 50Ω, 2200MHz to 3800MHz
>12
dB
LO Input Return Loss
ZO = 50Ω, 2400MHz to 3600MHz
>12
dB
IF Output Return Loss
Requires External Matching
>12
dB
LO Input Power
fLO = 2400MHz to 3600MHz
–4
0
6
dBm
LO to RF Leakage
fLO = 2400MHz to 3600MHz
<–28
dBm
LO to IF Leakage
fLO = 2400MHz to 3600MHz
<–35
dBm
LO Switch Isolation
LO1 Selected, 2400MHz < fLO < 3600MHz
LO2 Selected, 2400MHz < fLO < 3600MHz
>44
>47
dB
dB
RF to LO Isolation
fRF = 2200MHz to 4000MHz
>37
dB
RF to IF Isolation
fRF = 2200MHz to 4000MHz
>33
dB
5543f
2
LTC5543
AC ELECTRICAL CHARACTERISTICS
VCC = 3.3V, VCCIF = 3.3V, SHDN = Low, TA = 25°C, PLO = 0dBm,
PRF = –3dBm (Δf = 2MHz for two-tone IIP3 tests),unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4)
High-Side LO Downmixer Application: RF = 2300MHz to 2700MHz, IF = 190MHz, fLO = fRF +fIF
PARAMETER
CONDITIONS
Conversion Gain
RF = 2300MHz
RF = 2500MHz
RF = 2700MHz
Conversion Gain Flatness
RF = 2500 ±30MHz, LO = 2690MHz, IF=190 ±30MHz
Conversion Gain vs Temperature
TA = –40°C to +85°C, RF = 2500MHz
Input 3rd Order Intercept
RF = 2300MHz
RF = 2500MHz
RF = 2700MHz
SSB Noise Figure
MIN
TYP
7.0
8.9
8.4
8.2
MAX
dB
±0.1
22.5
UNITS
dB
–0.007
dB/°C
23.8
24.5
24.4
dBm
RF = 2300MHz
RF = 2500MHz
RF = 2700MHz
9.9
10.2
10.4
SSB Noise Figure Under Blocking
fRF = 2500MHz, fLO = 2690MHz,
fBLOCK = 2300MHz, PBLOCK = 5dBm
17.5
dB
2LO – 2RF Output Spurious Product
(fRF = fLO – fIF/2)
fRF = 2595MHz at –10dBm, fLO = 2690MHz, fIF = 190MHz
–61
dBc
3LO – 3RF Output Spurious Product
(fRF = fLO – fIF/3)
fRF = 2626.67MHz at –10dBm, fLO = 2690MHz, fIF = 190MHz
–74
dBc
Input 1dB Compression
RF = 2500MHz, VCCIF = 3.3V
RF = 2500MHz, VCCIF = 5V
10.9
13.9
dBm
11.9
dB
Low-Side LO Downmixer Application: RF = 2400MHz to 3800MHz, IF = 190MHz, fLO = fRF –fIF
PARAMETER
CONDITIONS
Conversion Gain
RF = 2600MHz
RF = 3300MHz
RF = 3500MHz
MIN
TYP
5.3
8.9
7.1
6.7
MAX
UNITS
dB
Conversion Gain Flatness
RF = 3500MHz ±30MHz, LO = 3310MHz, IF = 190 ±30MHz
±0.15
dB
Conversion Gain vs Temperature
TA = –40°C to 85°C, RF = 3500MHz
–0.004
dB/°C
Input 3rd Order Intercept
RF = 2600MHz
RF = 3300MHz
RF = 3500MHz
24.7
25.6
25.1
dBm
RF = 2600MHz
RF = 3300MHz
RF = 3500MHz
9.6
11.6
11.8
dB
2RF – 2LO Output Spurious Product
(fRF = fLO + fIF/2)
fRF = 3405MHz at –10dBm, fLO = 3310MHz
fIF = 190MHz
–50
dBc
3RF – 3LO Output Spurious Product
(fRF = fLO + fIF/3)
fRF = 3373.33MHz at –10dBm, fLO = 3310MHz
fIF = 190MHz
–77
dBc
Input 1dB Compression
RF = 3500MHz, VCCIF = 3.3V
RF = 3500MHz, VCCIF = 5V
11.3
11.8
dBm
SSB Noise Figure
22.5
5543f
3
LTC5543
DC ELECTRICAL CHARACTERISTICS
VCC = 3.3V, VCCIF = 3.3V, SHDN = Low, TA = 25°C, unless otherwise
noted. Test circuit shown in Figure 1. (Note 2)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
VCC Supply Voltage (Pins 6, 8 and 14)
3.1
3.3
3.5
V
VCCIF Supply Voltage (Pins 18 and 19)
3.1
3.3
5.3
V
99
102
201
116
122
238
mA
500
μA
Power Supply Requirements (VCC, VCCIF)
VCC Supply Current (Pins 6 + 8 + 14)
VCCIF Supply Current (Pins 18 + 19)
Total Supply Current (VCC + VCCIF)
Total Supply Current – Shutdown
SHDN = High
Shutdown Logic Input (SHDN) Low = On, High = Off
SHDN Input High Voltage (Off)
3
V
SHDN Input Low Voltage (On)
–0.3V to VCC + 0.3V
SHDN Input Current
–20
0.3
V
30
μA
Turn On Time
1
μs
Turn Off Time
1.5
μs
LO Select Logic Input (LOSEL) Low = LO1 Selected, High = LO2 Selected
LOSEL Input High Voltage
3
V
LOSEL Input Low Voltage
–0.3V to VCC + 0.3V
LOSEL Input Current
–20
LO Switching Time
VCC Supply Current
vs Supply Voltage
(Mixer and LO Switch)
85°C
220
104
85°C
25°C
–40°C
96
SUPPLY CURRENT(mA)
SUPPLY CURRENT (mA)
SUPPLY CURRENT(mA)
230
115
106
105
25°C
95
85
94
3.4
3.2
3.3
3.5
VCC SUPPLY VOLTAGE (V)
3.6
5543 G01
75
3.0
3.3
210
VCC = 3.3V, VCCIF = 5V
(DUAL SUPPLY)
200
VCC = VCCIF = 3.3V
(SINGLE SUPPLY)
190
180
–40°C
92
3.1
ns
Total Supply Current
vs Temperature (VCC + VCCIF)
125
108
90
3.0
μA
SHDN = Low, Test circuit shown in Figure 1.
VCCIF Supply Current
vs Supply Voltage (IF Amplifier)
110
98
30
Note 3: SSB Noise Figure measurements performed with a small-signal
noise source, bandpass filter and 6dB matching pad on RF input, bandpass
filter and 6dB matching pad on the LO input, and no other RF signals
applied.
Note 4: LO switch isolation is measured at the IF output port at the IF
frequency with fLO1 and fLO2 offset by 2MHz.
TYPICAL DC PERFORMANCE CHARACTERISTICS
100
V
50
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC5543 is guaranteed functional over the operating
temperature range from –40°C to 85°C.
102
0.3
3.6 3.9 4.2 4.5 4.8 5.1
VCCIF SUPPLY VOLTAGE (V)
5.4
5543 G02
170
–45
–25
55
–5
15
35
TEMPERATURE (°C)
75
95
5543 G03
5543f
4
LTC5543
TYPICAL AC PERFORMANCE CHARACTERISTICS
High-Side LO
VCC = 3.3V, VCCIF = 3.3V, SHDN = Low, TA = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests, Δf = 2MHz),
IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain, IIP3 and NF
vs RF Frequency
LO Leakage vs LO Frequency
15
IIP3
13
IIP3 (dBm)
NF
9
20
GC
GC (dB), SSB NF (dB)
11
22
16
2.2
2.4
5
3.2
2.6
2.8
3.0
RF FREQUENCY (GHz)
LO-RF
LO-IF
–40
–60
2.4
RF-LO
40
2.6
2.8
3.0
3.2
LO FREQUENCY (GHz)
3.4
30
2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0
RF FREQUENCY (GHz)
3.6
5543 G05
2300MHz Conversion Gain, IIP3
and NF vs LO Power
5543 G06
2500MHz Conversion Gain, IIP3
and NF vs LO Power
2700MHz Conversion Gain, IIP3
and NF vs LO Power
20
27
20
27
21
25
18
25
18
19
16
23
25 IIP3
23
17
10
15
8
13
6
11
GC
9
7
–6
–4
4
–2
0
2
LO INPUT POWER (dBm)
19
17
10
21
15
11
4
11
2
9
2
9
0
7
0
7
GC
–6
–4
4
–2
0
2
LO INPUT POWER (dBm)
19
20
25
18
23
10
9
7
3.0
GC
8
20
25
18
23
85°C 16
25°C
–40°C 14
19
NF
17
12
10
15
13
8
RF = 2500MHz
6
VCC = VCCIF
11
RF = 2500MHz
6
VCC = 3.3V
4
9
3.5
3.1
3.2
3.3
3.4
VCC, VCCIF SUPPLY VOLTAGE (V)
2
3.6
5543 G10
1
–4
4
–2
0
2
LO INPUT POWER (dBm)
7
3.0
GC
3.3
4
3.6 3.9 4.2 4.5 4.8 5.1
VCCIF SUPPLY VOLTAGE (V)
6
Conversion Gain, IIP3 and RF
Input P1dB vs Temperature
2
5.4
5543 G11
SSB NF (dB)
12
15
11
3
5543 G09
IIP3
21
SSB NF (dB)
17
NF
5
GC
Conversion Gain, IIP3 and NF
vs IF Supply Voltage (Dual Supply)
85°C 16
25°C
–40°C 14
13
7
–6
6
9
NF
13
5543 G08
GC (dB), IIP3 (dBm)
21
15
4
Conversion Gain, IIP3 and NF
vs Supply Voltage (Single Supply)
IIP3
11
6
5543 G07
23
17
21
13
6
25
8
NF
19
17
85°C
25°C 15
–40°C
13
SSB NF (dB)
NF
85°C
25°C
14
–40°C
12
SSB NF (dB)
19
16
GC (dB), IIP3 (dBm)
21
SSB NF (dB)
85°C
25°C 14
–40°C
12
IIP3
GC (dB), IIP3 (dBm), P1dB (dBm)
IIP3
GC (dB), IIP3 (dBm)
27
23
GC (dB), IIP3 (dBm)
45
35
5543 G04
GC (dB), IIP3 (dBm)
RF-IF
50
–50
7
18
55
–30
LO LEAKAGE (dBm)
24
RF Isolation vs RF Frequency
–20
ISOLATION (dB)
26
IIP3
21
RF = 2500MHz
VCCIF = 5.0V
VCCIF = 3.3V
19
17
15
13
P1dB
11
9
GC
7
–45 –25
–5
15
35
55
TEMPERATURE (°C)
75
95
5543 G12
5543f
5
LTC5543
TYPICAL AC PERFORMANCE CHARACTERISTICS
High-Side LO (continued)
VCC = 3.3V, VCCIF = 3.3V, SHDN = Low, TA = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests, Δf = 2MHz),
IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
2-Tone IF Output Power, IM3 and
IM5 vs RF Input Power
20
IFOUT
10 (RF = 2500MHz)
IFOUT
RF1 = 2499MHz
RF2 = 2501MHz
LO = 2690MHz
–10
0
–20
–30
–40
–50
–60
–10
LO = 2690MHz
–20
–30
2LO-2RF
(RF = 2595MHz)
–40
–50
3LO-3RF
(RF = 2626.67MHz)
–60
IM3
–70
–9
–6
–3
0
3
RF INPUT POWER (dBm/TONE)
3
6
9
–6 –3 0
RF INPUT POWER (dBm)
12
50
15
14
PLO = 0dBm
12
46
44
40
2.4
5
53
30
RF = 2500MHz
25
DISTRIBUTION (%)
20
15
10
2.6
2.8
3.0
3.2
LO FREQUENCY (GHz)
3.4
LOSEL = HIGH
3.6
8.2
8.4
8.6
CONVERSION GAIN (dB)
8.8
5543 G18a
2.6
2.8
3.0
3.2
LO FREQUENCY (GHz)
3.4
85°C
25°C
–40°C
5543 G18
25
RF = 2500MHz
20
20
15
10
0
22.9
3.6
SSB NF Distribution
85°C
25°C
–40°C
RF = 2500MHz
15
10
5
5
5
8.0
49
IIP3 Distribution
25
0
7.8
51
45
2.4
DISTRIBUTION (%)
85°C
25°C
–40°C
85°C
25°C
–40°C
5543 G17
Conversion Gain Distribution
30
6
47
5543 G16
DISTRIBUTION (%)
55
LOSEL = LOW
PLO = 3dBm
35
4
–2
0
2
LO INPUT POWER (dBm)
LO Switch Isolation
vs LO Frequency–LO2 Selected
42
0
–20
–15
–10
–5
RF BLOCKER POWER (dBm)
–4
5543 G15
ISOLATION (dB)
ISOLATION (dB)
SSB NF (dB)
PLO = –3dBm
10
–25
3LO-3RF
(RF = 2626.67MHz)
–6
15
85°C
25°C
–40°C
48
17
11
–70
LO Switch Isolation
vs LO Frequency–LO1 Selected
18
13
–65
5543 G14
RF = 2500MHz
BLOCKER = 2300MHz
16
2LO-2RF
(RF = 2595MHz)
–60
–80
–80
–12 –9
6
SSB Noise Figure
vs RF Blocker Level
19
–55
–75
5543 G13
20
RF = 2500MHz
LO = 2690MHz
PRF = –10dBm
–70
IM5
–80
–12
RELATIVE SPUR LEVEL (dBc)
0
–50
20
OUTPUT POWER (dBm)
OUTPUT POWER/TONE (dBm)
10
2 × 2 and 3 × 3 Spurs
vs LO Power
Single-Tone IF Output Power, 2 × 2
and 3 × 3 Spurs vs RF Input Power
23.3
23.7
24.1
IIP3 (dBm)
24.5
25.3
5543 G18b
0
8.2 8.6 9.0 9.4 9.8 10.2 10.6 11.0 11.4
SSB NOISE FIGURE (dB)
5543 G18c
5543f
6
LTC5543
TYPICAL AC PERFORMANCE CHARACTERISTICS
Low-Side LO
VCC = 3.3V, VCCIF = 3.3V, SHDN = Low, TA = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests, Δf = 2MHz),
IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
2600MHz Conversion Gain, IIP3
and RF Input P1dB vs Temperature
Conversion Gain, IIP3 and NF
vs RF Frequency
16
25
IIP3
12
22
NF
10
20
8
GC
16
2.4
2.6
21
17
15
13
P1dB
11
6
4.0
3.8
RF = 2600MHz
VCCIF = 5.0V
VCCIF = 3.3V
19
9
2.8 3 3.2 3.4 3.6
RF FREQUENCY (GHz)
25
7
–45
55
–5
15
35
TEMPERATURE (°C)
75
16
8
14
85°C 6
25°C
–40°C 4
12
GC
8
–6
–4
4
–2
0
2
LO INPUT POWER (dBm)
20
NF
18
12
16
10
14
8
8
0
6
85°C
6
25°C
–40°C 4
GC
–6
6
–4
4
–2
0
2
LO INPUT POWER (dBm)
18
12
16
10
12
10
2
8
0
6
2
0
–4
4
–2
0
2
LO INPUT POWER (dBm)
0
2 × 2 and 3 × 3 Spur Suppression
vs LO Power
–40
–50
–60
–30
LO = 3310MHz
2RF-2LO
(RF = 3405MHz)
–40
–50
–60
IM5
–80
–70
–90
–12
–80
–12 –9
6
5543 G24
RF = 3500MHz
LO = 3310MHz
PRF = –10dBm
–45
–10
–20
6
5543 G23
IFOUT
10 (RF = 3500MHz)
3
–9
–6
–3
0
RF INPUT POWER (dBm/TONE)
GC
–6
6
20
IM3
8
85°C
6
25°C
–40°C 4
14
Single-Tone IF Output Power, 2 × 2
and 3 × 3 Spurs vs RF Input Power
IFOUT
14
NF
5543 G22b
OUTPUT POWER (dBm)
OUTPUT POWER/TONE (dBm)
16
14
12
95
18
20
10
–20 RF1 = 3499MHz
RF2 = 3501MHz
–30 LO = 3310MHz
–40
75
20
22
2
–10
55
–5
15
35
TEMPERATURE (°C)
26
16
20
–70
–25
20
18
IIP3
2-Tone IF Output Power, IM3 and
IM5 vs RF Input Power
0
GC
3500MHz Conversion Gain, IIP3
and NF vs LO Power
22
5543 G22
10
9
5543 G21
RELATIVE SPUR LEVEL (dBc)
10
GC (dB), IIP3 (dBm)
10
P1dB
11
SSB NF (dB)
18
13
95
SSB NF (dB)
12
SSB NF (dB)
GC (dB), IIP3 (dBm)
14
NF
15
24 IIP3
24
16
20
17
–25
26
18
22
RF = 3500MHz
VCCIF = 5.0V
VCCIF = 3.3V
19
5
–45
3300MHz Conversion Gain, IIP3
and NF vs LO Power
24
21
5543 G20
2600MHz Conversion Gain, IIP3
and NF vs LO Power
IIP3
IIP3
7
5543 G19
26
23
GC
GC (dB), IIP3 (dBm)
18
GC (dB), SSB NF (dB)
IIP3 (dBm)
GC (dB), IIP3 (dBm), P1dB (dBm)
23
14
24
27
IIP3
GC (dB), IIP3 (dBm), P1dB (dBm)
26
3500MHz Conversion Gain, IIP3
and RF Input P1dB vs Temperature
3RF-3LO
(RF = 3373.33MHz)
–50
–55
2RF-2LO
(RF = 3405MHz)
–60
–65
–70
3RF-3LO
(RF = 3373.33MHz)
–75
–80
3
6
9
–6 –3 0
RF INPUT POWER (dBm)
12
15
5543 G25
–6
–4
–2
0
2
4
LO INPUT POWER (dBm)
6
5543 G26
5543f
7
LTC5543
PIN FUNCTIONS
NC (Pin 1): This pin is not connected internally. It can be
left floating, connected to ground or to VCC .
LOBIAS (Pin 7): This Pin Allows Adjustment of the LO
Buffer Current. Typical DC voltage is 2.2V.
RF (Pin 2): Single-Ended Input for the RF Signal. This pin
is internally connected to the primary side of the RF input
transformer, which has low DC resistance to ground. A
series DC-blocking capacitor should be used to avoid
damage to the integrated transformer. The RF input is
impedance matched, as long as the selected LO input is
driven with a 0dBm ±6dB source between 2.4GHz and
3.6GHz.
LOSEL (Pin 9): LO1/LO2 Select Pin. When the input voltage
is less than 0.3V, the LO1 port is selected. When the input
voltage is greater than 3V, the LO2 port is selected. Typical
input current is 11μA for LOSEL = 3.3V. This pin must not
be allowed to float.
CT (Pin 3): RF Transformer Secondary Center-Tap. This
pin may require a bypass capacitor to ground. See the
Applications Information section. This pin has an internally
generated bias voltage of 1.2V. It must be DC-isolated
from ground and VCC.
GND (Pins 4, 10, 12, 13, 17, Exposed Pad Pin 21):
Ground. These pins must be soldered to the RF ground
plane on the circuit board. The exposed pad metal of the
package provides both electrical contact to ground and
good thermal contact to the printed circuit board.
SHDN (Pin 5): Shutdown Pin. When the input voltage is
less than 0.3V, the internal circuits supplied through pins
6, 8, 14, 18 and 19 are enabled. When the input voltage
is greater than 3V, all circuits are disabled. Typical input
current is less than 10μA. This pin must not be allowed
to float.
VCC2 (Pin 6) and VCC1 (Pin 8): Power Supply Pins for
the LO Buffer and Bias Circuits. These pins are internally
connected and must be externally connected to a regulated
3.3V supply, with bypass capacitors located close to the
pin. Typical current consumption is 99mA.
LO1 (Pin 11) and LO2 (Pin 15): Single-Ended Inputs for
the Local Oscillators. These pins are internally biased
at 0V and require external DC blocking capacitors. Both
inputs are internally matched to 50Ω, even when the chip
is disabled (SHDN = high).
VCC3 (Pin 14): Power Supply Pin for the LO Switch. This
pin must be connected to a regulated 3.3V supply and
bypassed to ground with a capacitor near the pin. Typical
DC current consumption is less than 100μA.
IFGND (Pin 16): DC Ground Return for the IF Amplifier.
This pin must be connected to ground to complete the
IF amplifier’s DC current path. Typical DC current is
102mA.
IF – (Pin 18) and IF + (Pin 19): Open-Collector Differential
Outputs for the IF Amplifier. These pins must be connected
to a DC supply through impedance matching inductors, or
a transformer center-tap. Typical DC current consumption
is 51mA into each pin.
IFBIAS (Pin 20): This Pin Allows Adjustment of the IF
Amplifier Current. Typical DC voltage is 2.1V.
5543f
8
LTC5543
BLOCK DIAGRAM
20
19 18
IF+
IFBIAS
21
16
IF –
EXPOSED
PAD
IFGND
IF
AMP
2
3
5
LO2
15
VCC3
14
RF
LO
AMP
LOSEL
PASSIVE
MIXER
CT
SHDN
9
LO1
11
BIAS
VCC2
VCC1
6
8
7
LOBIAS
GND PINS ARE
NOT SHOWN
5541 BD
TEST CIRCUIT
L1
VCCIF
3.1V TO 5.3V
102mA
C9
C10
IF (MHz)
L1, L2 (nH)
L2
140
270
190
150
240
100
305
56
380
39
456
24
C8
20
RFIN
50Ω
L1, L2 vs IF
Frequencies
IFOUT
190MHz
50Ω
4:1
T1
19
18
17
16
IFBIAS IF+
IF –
GND
IFGND
1 NC
LO2 15
2 RF
VCC3 14
C4
LO2IN
50Ω
L4
REF DES
VALUE
SIZE
COMMENTS
C3, C4
2.7pF
0402
AVX
GND 13
C6, C7, C8
22pF
0402
AVX
GND 12
C5, C9
1μF
0603
AVX
C10
1000pF
0402
AVX
C11
0.8pF
0402
AVX
L1, L2
150nH
0603
Coilcraft
0603CS
L4
1.2nH
0402
Toko
LL1005-FH
T1
(Alternate)
TC4-1W-7ALN+
(WBC4-6TLB)
C11
C7
LTC5543
3 CT
4 GND
C3
SHDN
(0V/3.3V)
5 SHDN
VCC2
LOBIAS
7
6
VCC
3.1V TO 3.5V
99 mA
C5
0.015”
0.062”
0.015”
VCC1
LOSEL
9
8
LO1IN
50Ω
LO1 11
GND
10
5541 TC
C6
LOSEL
(0V/3.3V)
Mini-Circuits
(Coilcraft)
RF
GND
DC1431A
BOARD
BIAS STACK-UP
GND (NELCO N4000-13)
Figure 1. Standard Downmixer Test Circuit Schematic (190MHz IF)
5543f
9
LTC5543
APPLICATIONS INFORMATION
Introduction
The LTC5543 consists of a high linearity passive doublebalanced mixer core, IF buffer amplifier, high speed singlepole double-throw (SPDT) LO switch, LO buffer amplifier
and bias/shutdown circuits. See Block Diagram section for
a description of each pin function. The RF and LO inputs
are single-ended. The IF output is differential. Low-side or
high-side LO injection can be used. The evaluation circuit,
shown in Figure 1, utilizes bandpass IF output matching and
an IF transformer to realize a 50Ω single-ended IF output.
The evaluation board layout is shown in Figure 2.
applications. When used, C2 should be located within
2mm of pin 3 for proper high-frequency decoupling. The
nominal DC voltage on the CT pin is 1.2V.
For the RF input to be matched, the selected LO input
must be driven. A broadband input match is realized with
L4 = 1.2nH and C11 = 0.8pF. The measured RF input return
loss is shown in Figure 4 for LO frequencies of 2.6GHz,
3.0GHz and 3.4GHz. These LO frequencies correspond to
the lower, middle and upper values of the LO range. As
shown in Figure 4, the RF input impedance is somewhat
dependent on LO frequency.
TO MIXER
RFIN
L4
2
RF
C11
3
CT
C2
LTC5543
5543 F03
Figure 3. RF Input Schematic
5543 F02
Figure 2. Evaluation Board Layout
0
The mixer’s RF input, shown in Figure 3, is connected to
the primary winding of an integrated transformer. A 50Ω
match is realized with a series inductor (L4) and a shunt
capacitor (C11). The primary side of the RF transformer
is DC-grounded internally and the DC resistance of the
primary is approximately 3.2Ω. A DC blocking capacitor
is needed if the RF source has DC voltage present.
The secondary winding of the RF transformer is internally
connected to the passive mixer. The center-tap of the
transformer secondary is connected to pin 3 (CT) to allow
the connection of bypass capacitor, C2. The value of C2
is LO frequency-dependent and is not required for most
RF PORT RETURN LOSS (dB)
RF Input
5
LO = 2.6GHz
LO = 3.0GHz
LO = 3.4GHz
10
15
20
25
30
35
2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4
FREQUENCY (GHz)
5543 F04
Figure 4. RF Input Return Loss
5543f
10
LTC5543
APPLICATIONS INFORMATION
The RF input impedance and input reflection coefficient,
versus RF frequency, is listed in Table 1. The reference
plane for this data is pin 2 of the IC, with no external
matching, and the LO is driven at 2.69GHz.
Table 1. RF Input Impedance and S11
(at Pin 2, No External Matching, LO Input Driven at 2.69GHz)
S11
The LO switch is designed for high isolation and fast
(<50ns) switching. This allows the use of two active
synthesizers in frequency-hopping applications. If only
one synthesizer is used, then the unused LO input may
be grounded. The LO switch is powered by VCC3 (Pin 14)
and controlled by the LOSEL logic input (Pin 9). The LO1
and LO2 inputs are always 50Ω-matched when VCC is
applied to the chip, even when the chip is shutdown. The
DC resistance of the selected LO input is approximately
20Ω and the unselected input is approximately 50Ω. A
logic table for the LO switch is shown in Table 2. Measured
LO input return loss is shown in Figure 6.
FREQUENCY
(GHz)
INPUT
IMPEDANCE
MAG
ANGLE
2.0
44.6 + j14.7
0.16
101.3
2.2
41.0 + j11.9
0.16
119.7
2.4
37.7 + j10.7
0.18
132.0
2.6
31.7 + j9.4
0.25
146.2
2.8
26.2 + j18.8
0.38
127.8
3.0
28.3 + j22.4
0.38
118.1
LOSEL
ACTIVE LO INPUT
3.2
28.2 + j24.5
0.40
114.3
Low
LO1
3.4
27.7 + j27.8
0.43
109.0
High
LO2
3.6
28.7 + j31.2
0.46
102.7
3.8
29.9 + j32.8
0.45
99.2
4.0
30.4 + j33.4
0.44
97.8
LTC5543
LO2
C4 LO2IN
15
LO BUFFER
VCC3
14
TO
MIXER
Table 2. LO Switch Logic Table
The LO amplifiers are powered by VCC1 and VCC2 (pin 8
and pin 6). When the chip is enabled (SHDN = low), the
internal bias circuit provides a regulated 4mA current to the
amplifier’s bias input, which in turn causes the amplifiers
to draw approximately 90mA of DC current. This 4mA
reference current is also connected to LOBIAS (Pin 7)
to allow modification of the amplifier’s DC bias current
for special applications. The recommended application
circuits require no LO amplifier bias modification, so this
pin should be left open-circuited.
0
BIAS
7
LOBIAS
6
VCC2
8
VCC1
9
2
C3 LO1IN
LOSEL
5543 F05
Figure 5. LO Input Schematic
LO Inputs
The mixer’s LO input circuit, shown in Figure 5, consists
of an integrated SPDT switch, a balun transformer, and
a two-stage high-speed limiting differential amplifier to
drive the mixer core. The LTC5543’s LO amplifiers are
optimized for the 2.4GHz to 3.6GHz LO frequency range.
LO frequencies above or below this frequency range may
be used with degraded performance.
4
RETURN LOSS (dB)
LO1
11
4mA
6
8
10
12
SELECTED
14
16
NOT SELECTED
OR SHUTDOWN
18
20
22
2.2
2.4
2.6 2.8
3 3.2 3.4 3.6
LO FREQUENCY (GHz)
3.8
5543 F06
Figure 6. LO Input Return loss
5543f
11
LTC5543
APPLICATIONS INFORMATION
The nominal LO input level is 0dBm although the limiting
amplifiers will deliver excellent performance over a ±6dB
input power range. LO input power greater than 6dBm
may cause conduction of the internal ESD diodes. Series
capacitors C3 and C4 optimize the input match and provide
DC blocking.
T1
C10
R1
(OPTION TO
REDUCE
DC POWER)
IFBIAS
The LO1 input impedance and input reflection coefficient,
versus frequency, is shown in Table 3. The LO2 port
is identical due to the symmetric device layout and
packaging.
IFOUT
4:1
20
L1
L2
VCCIF
102mA L3 (OR SHORT)
C8
19
IF+
IF –
18
16
IFGND
VCC
IF
AMP
4mA
Table 3. LO1 Input Impedance vs Frequency
(at Pin 11, No External Matching, LOSEL = Low)
LTC5543
BIAS
S11
FREQUENCY
(GHz)
INPUT
IMPEDANCE
MAG
ANGLE
2.0
28.9 + j3.6
0.27
167.7
2.2
30.8 + j8.7
0.26
149.5
2.4
33.4 + j11.7
0.24
136.8
2.6
34.6 + j13.7
0.24
129.1
2.8
35.3 + j16.2
0.25
121.5
3.0
36.0 + j18.8
0.27
114.3
3.2
37.2 + j22.1
0.28
105.9
3.4
38.7 + j24.6
0.30
99.2
3.6
39.4 + j26.9
0.31
94.8
3.8
39.7 + j29.1
0.33
91.5
4.0
39.6 + j32.4
0.36
87.9
IF Output
The IF amplifier, shown in Figure 7, has differential opencollector outputs (IF+ and IF –), a DC ground return pin
(IFGND), and a pin for modifying the internal bias (IFBIAS).
The IF outputs must be biased at the supply voltage (VCCIF),
which is applied through matching inductors L1 and L2.
Alternatively, the IF outputs can be biased through the
center tap of a transformer. The common node of L1 and
L2 can be connected to the center tap of the transformer.
Each IF output pin draws approximately 51mA of DC
supply current (102mA total). IFGND (pin 16) must
be grounded or the amplifier will not draw DC current.
Grounding through inductor L3 may improve LO-IF and
RF-IF leakage performance in some applications, but is
otherwise not necessary. High DC resistance in L3 will
reduce the IF amplifier supply current, which will degrade
RF performance.
5543 F07
Figure 7. IF Amplifier Schematic with Transformer-Based
Bandpass Match
For optimum single-ended performance, the differential
IF outputs must be combined through an external IF
transformer or discrete IF balun circuit. The evaluation
board (see Figures 1 and 2) uses a 4:1 ratio IF transformer
for impedance transformation and differential to singleended transformation. It is also possible to eliminate the
IF transformer and drive differential filters or amplifiers
directly.
The IF output impedance can be modeled as 320Ω in
parallel with 2.4pF at IF frequencies. An equivalent smallsignal model (including bondwire inductance) is shown in
Figure 8. Frequency-dependent differential IF output
impedance is listed in Table 4. This data is referenced
to the package pins (with no external components) and
includes the effects of IC and package parasitics.
19
18
IF+
0.9nH
IF –
0.9nH
RIF
CIF
LTC5543
5543 F08
Figure 8. IF Output Small-Signal Model
5543f
12
LTC5543
APPLICATIONS INFORMATION
Transformer-Based Bandpass IF Matching
Discrete IF Balun Matching
The IF output can be matched for IF frequencies as low
as 90MHz or as high as 500MHz using the bandpass IF
matching shown in Figure 1 and Figure 7. L1 and L2 resonate
with the internal IF output capacitance at the desired IF
frequency. The value of L1, L2 is calculated as follows:
For many applications, it is possible to replace the IF Transformer with the discrete IF Balun shown in Figure 10.
The values of L5, L6, C13 and C14 are calculated to realize a
180° phase shift at the desired IF frequency and provide a 50Ω
single-ended output, using the equations listed below. Inductor
L7 is used to cancel the internal capacitance CIF and supplies
bias voltage to the IF pin. C15 is a DC blocking capacitor.
L1, L2 = 1/[(2 π fIF)2 • 2 • CIF]
where CIF is the internal IF capacitance (listed in Table 4).
RIF • ROUT
Values of L1 and L2 are tabulated in Figure 1 for various
IF frequencies.
L 5, L 6 =
Table 4. IF Output Impedance vs Frequency
C13, C14 =
FREQUENCY (MHz)
DIFFERENTIAL OUTPUT
IMPEDANCE (RIF || XIF (CIF))
90
348 || –j680 (2.6pF)
140
335 || –j455 (2.5pF)
190
324 || –j349 (2.4pF)
240
320 || –j276 (2.4pF)
300
315 || –j221 (2.4pF)
380
310 || –j182 (2.3pF)
456
302 || –j145 (2.4pF)
The typical performance of the LTC5543 using transformerbased bandpass IF matching at 305MHz output frequency
is shown in Figure 9. The values of L1 and L2 are 56nH
as shown in Figure 1.
ωIF
1
ωIF • RIF • ROUT
L7 =
|XIF |
ωIF
These equations give a good starting point, but it is usually
necessary to adjust the component values after building
and testing the circuit. The final solution can be achieved
with less iteration by considering the parasitics of L7 in
the above calculation.
The typical performance of the LTC5543 using a 456MHz
discrete IF Balun is shown in Figure 11. The actual
component values are:
L5, L6 = 36nH, L7 = 48nH and C13, C14 = 3.3pF
IFOUT
12
27
C15
IIP3
VCCIF = 3.3V
VCCIF = 5.0V 8
23
GC (dB)
IIP3 (dBm)
L5
10
25
R1
(OPTION TO
REDUCE
DC POWER)
C14
C13
L6
VCCIF
L7
102mA L3 (OR SHORT)
GC
6
21
IFBIAS
20
19
IF+
IF –
18
16
IFGND
IF = 305MHz
LOW-SIDE LO
19
2.5 2.7
2.9 3.1 3.3 3.5 3.7
RF FREQUENCY (GHz)
4
3.9 4.1
VCC
IF
AMP
5543 F09
4mA
Figure 9. Conversion Gain and IIP3 vs RF Frequency Using
Transformer-Based IF Matching
BIAS
LTC5543
5543 F10
Figure 10. IF Amplifier Schematic with Discrete IF Balun
5543f
13
LTC5543
APPLICATIONS INFORMATION
29
14
Table 5. Performance Comparison with VCCIF = 3.3V and 5V
(RF = 2500MHz, High-Side LO, IF = 190MHz)
IIP3
27
IIP3 (dBm)
VCCIF = 3.3V
VCCIF = 5.0V
23
VCCIF
(V)
ICCIF
(mA)
GC
(dB)
P1dB
(dBm)
IIP3
(dBm)
NF
(dB)
10
3.3
102
8.4
10.9
24.5
10.2
5
105
8.4
13.9
24.5
10.3
GC (dB)
25
12
8
GC
21
6
IF = 456MHz
LOW-SIDE LO
19
2.6 2.8
3
3.2 3.4 3.6 3.8
RF FREQUENCY (GHz)
4
4.2
4
5543 F11
Figure 11. Conversion Gain and IIp3 vs RF Frequency Using a
456MHz Discrete IF Balun
Measured IF output return losses for transformer-based
bandpass IF matching (190MHz and 305MHz IF frequency)
and discrete Balun IF matching (456MHz IF frequency) are
plotted in Figure 12.
IF PORT RETURN LOSS (dB)
0
Table 6. Mixer Performance with Reduced IF Amplifier Current
(RF = 2500MHz, High-Side LO, IF = 190MHz, VCC = VCCIF = 3.3V)
5
10
15
The IFBIAS pin (pin 20) is available for reducing the DC
current consumption of the IF amplifier, at the expense of
reduced performance. This pin should be left open-circuited
for optimum performance. The internal bias circuit produces
a 4mA reference for the IF amplifier, which causes the
amplifier to draw approximately 102mA. If resistor R1 is
connected to pin 20 as shown in Figure 7, a portion of the
reference current can be shunted to ground, resulting in
reduced IF amplifier current. For example, R1 = 1kΩ will
shunt away 1.5mA from pin 20 and the IF amplifier current
will be reduced by 38% to approximately 62mA. The nominal,
open-circuit DC voltage at pin 20 is 2.1V. Table 6 lists RF
performance at 2500MHz versus IF amplifier current.
190MHz IF
20
25
456MHz IF
305MHz IF
(DISCRETE BALUN)
30
140 180 220 260 300 340 380 420 460 500 540
IF FREQUENCY (MHz)
R1
(kΩ)
ICCIF
(mA)
GC
(dB)
IIP3
(dBm)
P1dB
(dBm)
NF
(dB)
OPEN
102
8.4
24.5
10.9
10.2
4.7
90
8.3
24.1
11
10.1
2.2
81
8.1
23.5
11
10.2
1
62
7.7
21.6
11
10.2
(RF = 3500MHz, Low-Side LO, IF = 190MHz, VCC = VCCIF = 3.3V)
R1
(kΩ)
ICCIF
(mA)
OPEN
100
6.7
25.1
11.3
11.8
4.7
90
6.4
24.7
11.4
11.7
2.2
82
6.1
24.2
11.5
11.8
1
64
5.3
23.2
11.4
12.1
GC
(dB)
IIP3
(dBm)
P1dB
(dBm)
NF
(dB)
5543 F12
Figure 12. IF Output Return Loss
IF Amplifier Bias
The IF amplifier delivers excellent performance with
VCCIF = 3.3V, which allows the VCC and VCCIF supplies
to be common. With VCCIF increased to 5V, the RF input
P1dB increases by more than 3dB, at the expense of higher
power consumption. Mixer performance at 2500MHz is
shown in Table 5 with VCCIF = 3.3V and 5V. For the highest
conversion gain, high-Q wire-wound chip inductors are
recommended for L1 and L2, especially when using
VCCIF = 3.3V. Low-cost multilayer chip inductors may be
substituted, with a slight degradation in performance.
Shutdown Interface
Figure 13 shows a simplified schematic of the SHDN pin
interface. To disable the chip, the SHDN voltage must be
higher than 3.0V. If the shutdown function is not required,
the SHDN pin should be connected directly to GND. The
voltage at the SHDN pin should never exceed the power
supply voltage (VCC) by more than 0.3V. If this should
occur, the supply current could be sourced through the
ESD diode, potentially damaging the IC.
5543f
14
LTC5543
APPLICATIONS INFORMATION
The SHDN pin must be pulled high or low. If left floating,
then the on/off state of the IC will be indeterminate. If a
three-state condition can exist at the SHDN pin, then a
pull-up or pull-down resistor must be used.
LTC5543
VCC2
6
SHDN
500Ω
5
Supply Voltage Ramping
Fast ramping of the supply voltage can cause a current
glitch in the internal ESD protection circuits. Depending on
the supply inductance, this could result in a supply voltage
transient that exceeds the maximum rating. A supply voltage
ramp time of greater than 1ms is recommended.
5543 F13
Figure 13. Shutdown Input Circuit
PACKAGE DESCRIPTION
UH Package
20-Lead Plastic QFN (5mm × 5mm)
(Reference LTC DWG # 05-08-1818 Rev Ø)
0.70 p0.05
5.50 p 0.05
4.10 p 0.05
2.60 REF
2.70 p 0.05
2.70 p 0.05
PACKAGE
OUTLINE
0.25 p0.05
0.65 BSC
PIN 1 NOTCH
R = 0.30 TYP
OR 0.35 s 45o
CHAMFER
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED
0.75 p 0.05
5.00 p 0.10
R = 0.05
TYP
R = 0.125
TYP
19 20
0.40 p 0.10
PIN 1
TOP MARK
(NOTE 6)
1
2
2.70 p 0.10
2.60 REF
5.00 p 0.10
2.70 p 0.10
(UH20) QFN 0208 REV Ø
0.25 p 0.05
0.200 REF
0.00 – 0.05
NOTE:
1. DRAWING IS NOT A JEDEC PACKAGE OUTLINE
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.20mm ON ANY SIDE
0.65 BSC
BOTTOM VIEW—EXPOSED PAD
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
5543f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
15
LTC5543
RELATED PARTS
PART NUMBER
Infrastructure
LT®5514
LT5517
LT5521
LT5522
LT5527
LTC6400-X
LTC6401-X
LTC6416
LTC6412
LT5554
LT5557
DESCRIPTION
COMMENTS
Ultralow Distortion, IF Amplifier/ADC Driver
with Digitally Controlled Gain
40MHz to 900MHz Quadrature Demodulator
10MHz to 3700MHz High Linearity
Upconverting Mixer
400MHz to 2.7GHz High Signal Level
Downconverting Mixer
400MHz to 3.7GHz,
5V Downconverting Mixer
300MHz Low Distortion IF Amp/ADC Driver
140MHz Low Distortion IF Amp/ADC Driver
2GHz 16-Bit ADC Buffer
31dB Linear Analog VGA
Ultralow Distort IF Digital VGA
400MHz to 3.8GHz 3.3V Downconverting Mixer
850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range
LT5560
LT5568
Ultra-Low Power Active Mixer
700MHz to 1050MHz High Linearity Direct
Quadrature Modulator
LT5572
1.5GHz to 2.5GHz High Linearity Direct
Quadrature Modulator
LT5575
700MHz to 2.7GHz Direct Conversion I/Q
Demodulator
LT5578
400MHz to 2.7GHz High Linearty Upconverting
Mixer
LT5579
1.5GHz to 3.8GHz High Linearity Upconverting
Mixer
LTC5598
5MHz to 1.6GHz I/Q Modulator
RF Power Detectors
LTC5505
RF Power Detectors with >40dB Dynamic Range
LTC5532
300MHz to 7GHz Precision RF Power Detector
LT5534
50MHz to 3GHz Log RF Power Detector with
60dB Dynamic Range
LTC5536
Precision 600MHz to 7GHz RF Power Detector
with Fast Comparator Output
LT5537
Wide Dynamic Range Log RF/IF Detector
LT5570
2.7GHz Mean-Squared Detector
LT5581
ADCs
LTC2208
LTC2262-14
LTC2242-12
6GHz Low Power RMS Detector
16-Bit, 130Msps ADC
14-Bit, 150Msps ADC Ultralow Power at 1.8V
Supply
12-Bit, 250Msps ADC
21dBm IIP3, Integrated LO Quadrature Generator
24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO
Port Operation
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF
and LO Ports
2.3dB Conversion Gain, 23.5dBm IIP3 and 12.5dB NF at 1900MHz,
5V/78mA Supply
Fixed Gain of 8dB, 14dB, 20dB and 26dB; >36dBm OIP3 at 300MHz, Differential I/O
Fixed Gain of 8dB, 14dB, 20dB and 26dB; >40dBm OIP3 at 140MHz, Differential I/O
40.25dBm OIP3 to 300MHz, Programmable Fast Recovery Output Clamping
35dBm OIP3 at 240MHz, Continuous Gain Range –14dB to 17dB
48dBm OIP3 at 200MHz, 2dB to 18dB Gain Range, 0.125dB Gain Steps
2.9dB Conversion Gain, 24.7dBm IIP3 and 11.7dB NF at 1950MHz,
3.3V/82mA Supply
10mA Supply Current, 10dBm IIP3, 10dB NF, Usable as Up- or Down-Converter.
22.9dBm OIP3 at 850MHz, –160.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband
Interface, 3-Ch CDMA2000 ACPR = –71.4dBc at 850MHz
21.6dBm OIP3 at 2GHz, –158.6dBm/Hz Noise Floor, High-Ohmic 0.5VDC Baseband
Interface, 4-Ch W-CDMA ACPR = –67.7dBc at 2.14GHz
Integrated Baluns, 28dBm IIP3, 13dBm P1dB, 0.03dB I/Q Amplitude Match,
0.4° Phase Match
27dBm OIP3 at 900MHz, 24.2dBm at 1.95GHz, Integrated RF Transformer
27.3dBm OIP3 at 2.14GHz, NF = 9.9dB, 3.3V Supply, Single-Ended LO and RF Ports
27.7dBm OIP3 at 140MHz, 22.9dBm at 900MHz, –161.2dBm/Hz Noise Floor
300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply
Precision VOUT Offset Control, Adjustable Gain and Offset
±1dB Output Variation over Temperature, 38ns Response Time, Log Linear
Response
25ns Response Time, Comparator Reference Input, Latch Enable Input,
–26dBm to +12dBm Input Range
Low Frequency to 1GHz, 83dB Log Linear Dynamic Range
±0.5dB Accuracy Over Temperature and >50dB Dynamic Range, Fast 500ns
Rise Time
40dB Dynamic Range, ±1dB Accuracy Over Temperature, 1.5mA Supply Current
78dBFS Noise Floor, >83dB SFDR at 250MHz
72.8dB SNR, 88dB SFDR, 149mW Power Consumption
65.4dB SNR, 78dB SFDR, 740mW Power Consumption
5543f
16 Linear Technology Corporation
LT 0110 • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2010