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HMC952LP5GE
v01.1012
Amplifiers - Linear & Power - SMT
GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER SMT
WITH POWER DETECTOR , 9 - 14 GHz
Typical Applications
Features
The HMC952LP5GE is ideal for:
+35 dBm Pout @ 27% PAE
• Point-to-Point Radios
High P1dB Output Power: +34 dBm
• Point-to-Multi-Point Radios
High Gain: 33 dB
• SATCOM
High Output IP3: +43 dBm
Supply Voltage: Vdd = +6V @ 1400 mA
50 Ohm Matched Input/Output
Functional Diagram
General Description
The HMC952LP5GE is a four-stage GaAs pHEMT
MMIC Medium Power Amplifier with a temperature
compensated on-chip power detector which operates
between 9 and 14 GHz. The amplifier provides
33 dB of gain and +35 dBm of saturated output power
at 27% PAE from a +6V supply. With up to +43 dBm
IP3 the HMC952LP5GE is ideal for linear applications
such as point-to-point and point-to-multi-point radios
or SATCOM applications demanding +35 dBm of
efficient saturated output power. The RF I/Os are
internally matched to 50 Ohms.
Electrical Specifications, TA = +25° C, Vdd1, Vdd2, Vdd3, Vdd4 = +6V, Idd = 1400 mA [1]
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
9 - 10
[2]
30
Gain Variation Over Temperature
33
30
Typ.
Max.
Units
10 - 14
GHz
33
dB
0.05
0.05
dB/ °C
Input Return Loss
12
15
dB
Output Return Loss
9
12
dB
34
dBm
34.5
35
dBm
42
43
dBm
1400
1400
mA
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
[2]
30.5
[2]
Output Third Order Intercept (IP3)
[2] [3]
Total Supply Current
33
31.5
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1400 mA typical.
[2] Board loss subtracted out.
[3] Measurement taken at Pout / tone = +20 dBm.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC952LP5GE
v01.1012
GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT
WITH POWER DETECTOR, 9 - 14 GHz
40
45
30
40
20
35
S21
S11
S22
10
0
30
25
-10
20
-20
-30
15
8
9
10
11
12
13
FREQUENCY (GHz)
14
15
16
9
10
12
13
14
Output Return Loss vs. Temperature
0
0
-5
+25C
+85C
-40C
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-10
-15
+25C
+85C
-40C
-20
-25
-30
-35
-30
9
10
11
12
13
14
9
10
FREQUENCY (GHz)
11
12
13
14
13
14
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB vs Supply Voltage
38
38
5V
+25C
+85C
-40C
36
36
34
P1dB (dBm)
P1dB (dBm)
11
FREQUENCY (GHz)
Input Return Loss vs. Temperature
RETURN LOSS (dB)
+25C
+85C
-40C
Amplifiers - Linear & Power - SMT
Gain vs. Temperature
GAIN (dB)
RESPONSE (dB)
Gain & Return Loss
32
34
32
30
30
28
28
26
6V
26
9
10
11
12
FREQUENCY (GHz)
13
14
9
10
11
12
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC952LP5GE
v01.1012
GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT
WITH POWER DETECTOR, 9 - 14 GHz
38
38
36
36
34
34
Psat (dBm)
Psat (dBm)
Psat vs. Supply Voltage
+25C
+85C
-40C
32
30
28
28
5V
6V
26
9
10
11
12
13
14
9
10
FREQUENCY (GHz)
P1dB vs. Supply Current
12
13
14
13
14
Psat vs. Supply Current
38
36
36
34
34
Psat(dBm)
38
32
30
1000 mA
1100 mA
1200mA
1300mA
1400mA
32
30
1000 mA
1100 mA
1200 mA
1300 mA
1400 mA
28
28
26
26
9
10
11
12
13
14
9
10
FREQUENCY (GHz)
12
Output IP3 vs. Supply Current,
Pout/tone = +20 dBm
46
46
44
44
42
42
40
40
38
+25C
+85C
-40C
36
11
FREQUENCY (GHz)
IP3 (dBm)
IP3 (dBm)
11
FREQUENCY (GHz)
Output IP3 vs. Temperature,
Pout/tone = +20 dBm
38
1000 mA
1100 mA
1200 mA
1300 mA
1400 mA
36
34
34
32
32
30
30
9
10
11
12
FREQUENCY (GHz)
3
32
30
26
P1dB (dBm)
Amplifiers - Linear & Power - SMT
Psat vs. Temperature
13
14
9
10
11
12
13
14
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC952LP5GE
v01.1012
GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT
WITH POWER DETECTOR, 9 - 14 GHz
46
80
44
70
42
60
40
50
38
5V
36
6V
40
20
32
10
30
9.5 GHz
10.5 GHz
11.5 GHz
12.5 GHz
13.5 GHz
30
34
0
9
10
11
12
13
14
10
12
14
FREQUENCY (GHz)
16
18
20
22
24
Pout/TONE (dBm)
Output IM3 @ Vdd = +6V
Noise Figure vs. Temperature
10
80
+25C
+85C
-40C
70
8
NOISE FIGURE (dB)
60
IM3 (dBc)
Amplifiers - Linear & Power - SMT
Output IM3 @ Vdd = +5V
IM3 (dBc)
IP3 (dBm)
Output IP3 vs. Supply Voltage,
Pout/tone = +20 dBm
50
40
9.5 GHz
10.5 GHz
11.5 GHz
12.5 GHz
13.5 GHz
30
20
6
4
2
10
0
0
10
12
14
16
18
20
22
9
24
10
11
Pout/TONE (dBm)
Power Compression @ 9.5 GHz
13
14
Power Compression @ 11.5 GHz
40
3200
2800
35
2800
30
2400
30
2400
25
2000
25
2000
20
1600
20
1600
1200
15
Idd
10
800
Pout
Gain
PAE
5
400
0
0
-14
-12
-10
-8
-6
-4
-2
0
INPUT POWER (dBm)
2
4
6
Pout (dBm), Gain (dB), PAE (%)
3200
35
1200
15
Idd
10
800
Pout
Gain
PAE
5
400
0
0
-14
Idd (mA)
40
Idd (mA)
Pout (dBm), Gain (dB), PAE (%)
12
FREQUENCY (GHz)
-12
-10
-8
-6
-4
-2
0
2
4
6
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC952LP5GE
v01.1012
GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT
WITH POWER DETECTOR, 9 - 14 GHz
Detector Voltage vs. Frequency &
Temperature
3200
35
2800
30
2400
25
2000
20
1600
15
1200
10
1
Vref-Vdet (V)
Pout (dBm), Gain (dB), PAE (%)
40
Idd (mA)
10 GHz +25C
10 GHz +85C
10 GHz -40C
12 GHz +25C
12 GHz +85C
12 GHz -40C
0.01
800
10
Pout
Gain
PAE
5
400
0
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
0.001
-10
-6
-2
2
6
14
18
22
26
30
34
Gain & Power vs.
Supply Current @ 11.5 GHz
Reverse Isolation vs. Temperature
40
Gain (dB), P1dB (dBm), Psat (dBm)
0
-10
+25C
+85C
-40C
-20
-30
-40
-50
-60
-70
-80
36
32
28
GAIN
P1dB
Psat
24
20
-90
11
12
13
14
15
16
1000
17
1050
1100
1150
1200
1250
1300
1350
1400
Idd (mA)
FREQUENCY (GHz)
Power Dissipation
40
12
POWER DISSIPATION (W)
Gain (dB), P1dB (dBm), Psat (dBm)
10
OUTPUT POWER (dBm)
INPUT POWER (dBm)
Gain & Power vs.
Supply Voltage @ 11.5 GHz
36
32
GAIN
P1dB
Psat
28
24
20
5
5.2
5.4
5.6
Vdd (V)
5
0.1
Idd
0
ISOLATION (dB)
Amplifiers - Linear & Power - SMT
Power Compression @ 13.5 GHz
5.8
6
10
8
6
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
14 GHz
4
2
0
-10
-8
-6
-4
-2
0
2
4
6
8
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC952LP5GE
v01.1012
GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT
WITH POWER DETECTOR, 9 - 14 GHz
Drain Bias Voltage (Vdd)
+8 Vdc
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 137 mW/°C above 85 °C)
8.9 W
Thermal Resistance
(channel to die bottom)
7.3 °C/W
Storage Temperature
-65 to 150°C
Operating Temperature
-55 to 85 °C
ESD Sensitivity (HBM)
Class 0, Passed 150V
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
-3 - 0 Vdc
+5
1400
+24 dBm
+6
1400
Adjust Vgg1 to achieve Idd = 1400 mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Amplifiers - Linear & Power - SMT
Absolute Maximum Ratings
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating [2]
Package Marking [1]
HMC952LP5GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL3
H952
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
6
HMC952LP5GE
v01.1012
GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT
WITH POWER DETECTOR, 9 - 14 GHz
Amplifiers - Linear & Power - SMT
Pin Descriptions
7
Pin Number
Function
Description
1-3, 9, 10,
14, 17-19,
23, 24
N/C
These pins are not connected internally, however all data
shown herein was measured with these pins connected to
RF/DC ground externally.
4
RFIN
This pin is DC coupled and matched to 50 Ohms.
5, 15
GND
These pins and package bottom must be connected to
RF/DC ground.
6-8
Vgg1, Vgg2,
Vgg3
Gate control for amplifier External bypass capacitors of
100pF, 10nF and 4.7uF are required.
11, 20-22
Vdd4, Vdd3, Vdd2,
Vdd1
Drain bias voltage for amplifier. external bypass capacitors
of 100pF, 10nF and 4.7uF are required.
12
Vref
DC bias of diode biased through external resistor , used
for temperature compensation of Vdet. See application
circuit.
13
Vdet
DC voltage representing RF output power rectified by
diode which is biased through an external resistor. See
application circut.
16
RFOUT
This pin is DC coupled and matched to 50 Ohms
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC952LP5GE
v01.1012
GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT
WITH POWER DETECTOR, 9 - 14 GHz
Amplifiers - Linear & Power - SMT
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8
HMC952LP5GE
v01.1012
GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT
WITH POWER DETECTOR, 9 - 14 GHz
Amplifiers - Linear & Power - SMT
Evaluation PCB
List of Materials for Evaluation PCB EVAL01-HMC952LP5GE
Item
Description
J1, J2, J5, J6
K Connector SRI
J3, J4
DC Pin
C2, C3, C9, C12,
C14, C16, C17,
C19
100 pF Capacitor, 0402 Pkg.
C1, C4, C10, C11,
C13, C15, C18,
C20
10 nF Capacitor, 0402 Pkg.
C21, C22, C25
- C30
4.7uF Capacitor, Case A.
U1
HMC952LP5GE Power Amplifier
PCB
600-00163-00 Evaluation PCB
[1]
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon FR4
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC952LP5GE
v01.1012
GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT
WITH POWER DETECTOR, 9 - 14 GHz
Amplifiers - Linear & Power - SMT
Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
10