J
L
Department of Electrical & Computer Engineering
University of California, Santa Barbara, CA 93106
Citizenship: United States of America http://ece.ucsb.edu/~jeremylaw jeremylaw@ece.ucsb.edu
Phone: +1 (858) 228-6423
RESEARCH INTERESTS:
(Opto)electronic materials and devices from atom to transistor
Alternative materials for CMOS computation
New materials and devices for post–CMOS computation
Density of states engineering for improved (opto)electronic devices
Novel characterization techniques of advanced electronic materials and devices
EDUCATION:
University of California, San Diego (8/04–10/09)
Doctor of Philosophy in Electrical Engineering (10/09)
Dissertation: Scanned Probe Studies of Semiconductor Nanostructures
Master of Science in Electrical Engineering, GPA: 3.59 (10/07)
University of Pennsylvania (9/00–6/04)
Bachelor of Science in Electrical Engineering ( magna cum laude ), GPA: 3.72 (6/04)
Coursework pursuant to Master of Engineering in Electrical Engineering (9/02–6/04)
EXPERIENCE:
University of California, Santa Barbara , Santa Barbara, CA (11/09–Present)
Assistant Project Scientist, Department of Electrical and Computer Engineering (7/12–
Present)
Supervisors: Professors Mark Rodwell and Arthur Gossard
• Assisted in developing concepts and device structures towards eigenstate density engineering III–V MOSFETs for sub 10 nm L g
nodes o Directed and collaborated with theorists for optimal device design
• Developed atomically smooth growth techniques for (110) and (111) III–V materials o Developed optimized growth for on–axis (111)A GaSb o Optimized growth for vicinal (111)A AlSb and GaSb o Developed quasi–selective growth techniques for optimized on–axis (111)A GaAs
• Showed equivalence of ballistic FET transconductance and 2–D quantum resistance
• Helped develop MOVPE selective area regrown source/drain for InGaAs MOSFETs
• Advised two graduate students in developing process flows for 10 nm L g
III–V
MOSFETs
• Advised a graduate student in developing new wide bandgap heterojunction materials and new quasi–selective regrowth techniques
Postdoctoral Scholar, Dept. of Materials and Electrical and Computer Engineering (11/09–
7/12)
Supervisors: Professors Mark Rodwell and Arthur Gossard
• Developed and characterized electrical and structural properties of epitaxial regrowth o Characterized impacts of growth conditions on electrical contact resistance

Cirriculum Vitae Jeremy Law o Demonstrated regrowth sinking/alloying effect with cross–sectional TEM and atom probe tomography o Showed density of states limited contact resistance for two– and three–terminal devices o Developed co–doping technique to lower contact resistance of regrown Ohmic contacts
• Directed graduate student in developing scalable gate–first process flow for extremely scaled III–V NMOS devices o Demonstrated feasibility of MBE regrown source and drain for 10 nm L g
NMOS with gate–last process flows
III–V
University of California, San Diego , Austin, TX (10/2/09–11/2/09)
Postdoctoral Scholar, Department of Electrical and Computer Engineering
Supervisor: Professor Edward Yu
• Characterized bias dependence of nanoscale depletion of Si and Ge nanowire pn junctions o Showed linear depletion width scaling of nanowire pn junctions with kelvin probe microscopy
University of California, San Diego , La Jolla, CA (9/04–10/09)
Graduate Student Researcher, Department of Electrical and Computer Engineering
Supervisor: Professor Edward Yu
• Characterized electrical defects in GaN thin films o Characterized electrical nature of stacking faults in non–polar GaN grown by HVPE o Characterized and eliminated conductivity of screw dislocations in polar GaN films grown by plasma assisted MBE
• Characterized local electrostatic interactions between nanowire devices and macro–scale contacts o Grew InAs and InP nanowires by MOVPE o Fabricated and electrically characterized two– and three–terminal nanowire devices o Demonstrated contact screening effect in InAs nanowire devices
• Developed direct scanning capacitance spectroscopy technique o Directed two undergraduates to develop scanning probe capacitance measurement technique o Fabricated device test and calibration structures
• Teaching assistant for advanced undergraduate course in electronic materials (ECE 103,
Fall 2005) o Four hours of lecture and two office hours per week
University of Pennsylvania, Philadelphia, PA (9/03–8/04)
Research Associate, Department of Electrical and Systems Engineering
Supervisors: Professors Jorge Santiago, Stephan Evoy, and Charlie Johnson
• Constructed environmental test chamber for exposure of gas sensors to multiple gas species
• Designed and implemented micro–hot plates for heating of tin–oxide chemical sensors
• Characterized tin–oxide and carbon nanotube gas sensors using test chamber
University of Pennsylvania , Philadelphia, PA (12/03–8/04)
2

Cirriculum Vitae Jeremy Law
Laboratory Manager, Micro–Fabrication Laboratory, Department of Electrical & Systems
Engineering
Supervisor: Professor Jorge Santiago and Dr. Scott Slavin
• Managed evening operation of clean room facility o Trained new users o Monitored users and equipment o Equipment maintenance
§ Electron–beam evaporator, Karl–Suss contact mask aligners o Lab shut down in off–hours
Stanford Research Institute International, Menlo Park, CA (6/03–8/03)
Student Associate, Materials Research Laboratory
Supervisor: Dr. Francis Tanzella
• Developed LabView data acquisition software for time–dependent mass spectrometry
• Studied time–dependent decomposition of new rocket propellants via time–resolved mass spectroscopy
Sun Microsystems, Mountain View, CA (6/01–8/01 and 6/02–8/02)
Graduate Student Intern, Systems Migration Department
Supervisor: Erik Hashiguchi
• Managed user server–side file systems
• Facilitated Unix desktop moves for Sun employees
• Developed Java library management GUI
• Assisted in the development of interactive FAQ
University of Cincinnati, Cincinnati, OH (6/99–8/99)
Researcher, NASA SHAPR Plus Program
Supervisor: Professor Carla Gurdy
• Found computationally less expensive modeling methods than finite element analysis for microelectromechanical (MEMS) cantilever systems
• Partial–differential equation modeling of cantilever systems using Mathematica and
PSPICE
• Finite element analysis (ANSYS) modeling of cantilever systems
Plugged In, East Palo Alto, CA (6/98–8/98)
Volunteer, Management and Information Systems Department
Supervisor: Magda Escobar
• Educated community members in computer usage and learning of computer skills
• Taught children’s computer learning workshops
• Computer support and repair in the Management Information Systems department
GRADUATE HONORS:
Powell Fellowship, University of California, San Diego, 2004–2007
UNDERGRADUATE HONORS :
Tau Beta Pi, University of Pennsylvania, 2002–2004
Dean’s Honor List, University of Pennsylvania, 2001–2003
3

Cirriculum Vitae
PROFESSIONAL ACTIVITIES:
Reviewer:
IEEE Transaction on Nanotechnology
Journal of Vacuum Science and Technology
Member:
IEEE, IEEE Electron Device Society
Materials Research Society
American Physical Society
American Vacuum Society
PERSONNEL SUPERVISED:
Current Personnel:
Andrew Carter, University of California, Santa Barbara, CA (11/09–Present)
B.S., Univ. of Notre Dame; Ph.D. candidate (Electrical Engineering, UCSB)
Jeremy Law
Sanghoon Lee, University of California, Santa Barbara, CA (9/10–Present)
M.S., Seoul National University; Ph.D. student (Electrical Engineering, UCSB)
Cheng–Ying Huang, University of California, Santa Barbara, CA (9/11–Present)
M.S., National Taiwan University; Ph.D. student (Electrical Engineering, UCSB)
Past Personnel:
Alex Dunlap, UCSD (6/07–8/07)
B.S., San Jose State University; Ph.D. student (Electrical Engineering, Georgia Tech)
Byron Ho, UCSD (4/07–6/08)
B.S., UCSD; Ph.D student (Electrical Engineering, UC Berkely)
Keun Woo Park, UCSD and UT Austin (9/07–11/09)
B.S., Yonsei University; Ph.D. student (Electrical Engineering, UCSD/UT Austin)
Isidro Calderon, UCSB (6/12–8/12)
A.A. student (Engineering, Santa Barbara City College)
PEER–REVIEWED PAPERS:
1.
J. J. M. Law , E. T. Yu, B. A. Haskell, P. T. Fini, S. Nakamura, J. S. Speck, and S. P.
DenBaars, “Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy,” Journal of Applied Physics Vol. 103 , 014305 (2008), http://dx.doi.org/10.1063/1.2828161.10.1063.
2.
J. J. M. Law , S. A. Dayeh, D. Wang, and E. T. Yu, “Scanning capacitance characterization of potential screening in InAs nanowire devices,” Journal of Applied Physics Vol. 105 ,
014306 (2009), http://dx.doi.org/10.1063/1.3055367.
3.
J. J. M. Law , E. T. Yu, G. Koblmüller, F. Wu, and J. S. Speck, “Low dislocation–mediated reverse bias leakage in (0001) GaN via high–temperature MBE growth.” Applied Physics
Letters Vol. 96 , 102111 (2010), http://dx.doi.org/10.1063/1.3360227.
4.
G. J. Burek, Y. Hwang, A. D. Carter, V. Chobpattana, J. J. M. Law, W. J. Mitchell, S.
Stemmer, and M. J. W. Rodwell, Influence of gate metallization processes on electrical characteristics of high–k/In
0.53
Ga
0.47
As interfaces,” Journal of Vacuum Science and
Technology B Vol. 29, 040603 (2011), http://dx.doi.org/10.1116/1.3610989.
4

Cirriculum Vitae Jeremy Law
5.
A. D. Carter, W. J. Mitchell, B. J. Thibeault, J. J. M. Law , and M. J. W. Rodwell, “Al
2
O
3
Growth on (100) In
0.53
Ga
0.47
As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma
Exposures,” Applied Physics Express Vol. 4, 091102 (2011), http://dx.doi.org/10.1143/APEX.4.091102.
6.
S. Lee, J. J. M. Law , A. D. Carter, B. J. Thibeault, W. Mitchel, V. Chobpattana, S. Krämer,
S. Stemmer, A. C. Gossard, M. J. W. Rodwell, “Substitutional–Gate MOSFETs with
Composite (In
0.53
Ga
0.47
As/InAs/In
0.53
Ga
0.47
As) Channel Using Self–Aligned MBE Source–
Drain Regrowth,” Vol. 33 , 1553 (2012), http://dx.doi.org/10.1109/LED.2012.2215572.
7.
V. Chobpattana, J. Son, J. J. M. Law , R. Engel–Herbert, C. –Y. Huang, and S. Stemmer,
“Nitrogen–Passivated dielectric/InGaAs interfaces with sub–nm–equivalent oxide thickness and low interface trap densities,” Applied Physics Letters Vol. 102 , 022907 (2013), http://dx.doi.org/10.1063/1.4776656.
8.
J. J. M. Law , A. D. Carter, S. Lee, C. –Y. Huang, H. Lu, M. J. W. Rodwell, and A. C.
Gossard, “Co–Doping of In x
Ga
1–x
As with Silicon and Tellurium for Improved Ultra–Low
Contact Resistance,” accepted to the Journal of Crystal Growth, http://dx.doi.org/10.1016/j.jcrysgro.2012.12.122.
9.
S. R. Mehrotra, M. Povolotskyi, D. C. Elias, J. J. M. Law , M. J. W. Rodwell, G. Klimeck,
“Extremely thin–body ballistic n–MOSFET designs involving transport in mixed Γ –L valleys,” in preparation for IEEE Electron Device Letters .
10.
J. J. M. Law , I. Calderon, C. –Y. Huang, H. Lu, M. J. W. Rodwell, and A. C. Gossard,
“Surface Morphology of GaAs and GaSb (111)A Grown by Molecular Beam Epitaxy,” in preparation for the Journal of Vacuum Science and Technology B.
11.
J. J. M. Law , A. D. Carter, S. Lee, A. C. Gossard, and M. J. W. Rodwell, “Regrown Ohmic
Contacts Approaching the Quantum Conductivity Limit,” in preparation for Applied Physics
Letters.
CONFERENCE PROCEEDINGS:
1.
J. J. M. Law , S. A. Dayeh, D. Wang, and E. T. Yu, “Scanning capacitance characterization of potential screening in InAs nanowire devices,” Proceedings of the 8 th IEEE Conference on
Nanotechnology (2008 IEEE http://dx.doi.org/10.1109/NANO.2008.168.
NANO), 2008 , pp. 569–572,
2.
M. J. W. Rodwell, U. Singisetti, M. Wistey, G. J. Burek, A. D. Carter, A. K. Baraskar, J.
Law , B. J. Thibeault, E. J. Kim, B. Shin, Y.–J. Lee, S Steiger, S. Lee, H. Ryu, Y. Tan, G.
Hedge, L. Want, E. Chagarov, A. C. Gossard, W. Frensley, A. C. Kummel, C. J. Palmstrøm,
P. C. MyIntyre, T. Boykin, G. Klimek, and P. Asbeck, “III–V MOSFETs: Scaling Laws,
Scaling Limits, Fabrication Processes,” Proceedings of the Conference on Indium Phosphide and Related Materials (IPRM) 2010 , p. 1–6, May 2010, http://dx.doi.org/10.1109/ICIPRM.2010.5515914.
3.
M. Rodwell, W. Frensley, S. Steiger, E. Chagarov, S. Lee, H. Ryu, Y. Tan, G. Hegde, L.
Wang, J. Law , T. Boykin, G. Klimek, P. Asbeck, A. Kummel, and J. N. Schulman, "III–V
FET channel designs for high current densities and thin inversion layers," Proceedings of the
Device Research Conference (DRC) 2010 , p. 149–152, June 2010, http://dx.doi.org/10.1109/DRC.2010.5551882.
4.
J. J. M. Law , A. D. Carter, S. Lee, A. C. Gossard, M. J. W. Rodwell, “Regrown Ohmic
Contacts to In x
Ga
1-x
As Approaching the Quantum Conductivity Limit,” Proceedings of the
Device Research Conference (DRC) 2012 , p. 199–200, June 2012, http://dx.doi.org/10.1109/DRC.2012.6257010.
5

Cirriculum Vitae Jeremy Law
5.
S. Mehrotra, M. Povolostskyi, J. Law , T. Kubis, G. Klimeck, M. Rodwell, “Design of high– current L–valley GaAs/AlAs
0.56
Sb
0.44
/InP (111) ultra–thin–body nMOFSETs,” Proceedings of the Conference on Indium Phosphide and Related Materials (IPRM) 2012 , p. 151–154,
Aug. 2012, http://dx.doi.org/10.1109/ICIPRM.2012.6403344.
6.
S. Lee, A. D. Carter, J. J. M. Law , H. Lu, A. C. Gossard, and M. J. W. Rodwell “High
Performance Substitutional–Gate MOSFETs Using MBE Source–Drain Regrowth and
Scaled Gate Oxides,” Proceedings of the Conference on Indium Phosphide and Related
Materials (IPRM) 2012 , p. 155–158, Aug. 2012, http://dx.doi.org/10.1109/ICIPRM.2012.6403345.
7.
C. –Y. Huang, J. J. M. Law, H. Lu, M. J. W. Rodwell, and A. C. Gossard, “Development of
AlAsSb as a barrier material for ultra–thin–channel InGaAs nMOSFETs,” submitted to The
Proceedings of the Materials Research Society Spring 2013 meeting.
CONFERENCE PRESENTATIONS:
1.
J. J. M. Law , S. A. Dayeh, D. Wang, and E. T. Yu, “Scanning capacitance characterization of potential screening in InAs nanowires,” presentation at 2008 Electronic Materials
Conference, Santa Barbara, CA, June 2008.
2.
J. J. M. Law , S. A. Dayeh, D. Wang, and E. T. Yu, “Scanning capacitance characterization of potential screening in InAs nanowire devices,” presentation at 8 th International Conference on Nanotechnology (2008 IEEE NANO), Arlington, TX, August 2008.
3.
G. Koblmüller, F. Wu, R. M. Chu, A. Raman, J. J. M. Law , E. T. Yu, U. K. Mishra, and J.
S. Speck, “Improved high–T growth of AlGaN/GaN electronic devices structures by PAMBE in the GaN thermal decomposition regime,” poster at 15 th European MBE Workshop,
Zakopane, Poland, March 2009.
4.
J. J. M. Law , G. Koblmüller, F. Wu, J. S. Speck, and E. T. Yu, “Low dislocation mediated reverse bias leakage in (0001) GaN via novel high–temperature MBE growth,” presentation at the 2009 Electronic Materials Conference, University Park, PA, June 2009.
5.
G. Koblmüller, J. J. M. Law , F. Wu, R. Chu, A. Raman, U. K. Mishra, E.T. Yu, and J. S.
Speck, “High–temperature PA–MBE growth of (Al)GaN–based electronic structures on
(0001) GaN templates and dislocation mediated effects,” presentation at 8 th International
Conference on Nitride Semiconductors, Jeju, Korea, October 2009.
6.
M. J. W. Rodwell, U. Singisetti, M. Wistey, G. J. Burek, A. D. Carter, A. K. Baraskar, J.
Law , B. J. Thibeault, E. J. Kim, B. Shin, Y.–J. Lee, S Steiger, S. Lee, H. Ryu, Y. Tan, G.
Hedge, L. Want, E. Chagarov, A. C. Gossard, W. Frensley, A. C. Kummel, C. J. Palmstrøm,
P. C. MyIntyre, T. Boykin, G. Klimek, and P. Asbeck, “III–V MOSFETs: Scaling Laws,
Scaling Limits, Fabrication Processes,” presentation at the 22 nd Conference on Indium
Phosphide and Related Materials, Kagawa, Japan, May 2010.
7.
M. J. W. Rodwell, W. Frensley, S. Steiger, E. Chagarov, S. Lee, H. Ryu, Y. Tan, G. Hedge,
L. Wag, J. J. M. Law , T Boykin, G. Klimek, P. Asbeck, A. C. Kummel, and J. N. Schulman,
“III–V Channel Designs for High Current Densities and Thin Inversion Layers,” presentation at the 2010 IEEE Device Research Conference, South Bend, IN, June 2010.
8.
G. Koblmüller, J. J. M. Law , F. Wu, F. Reurings, F. Tuomisto, E. T. Yu, and J. S. Speck,
“Effect of high–temperature PA–MBE growth on point defects and local reverse–bias leakage in (0001) GaN,” presentation at the International Workshop on Nitride
Semiconductors 2010, Tampa, FL, September 2010 .
9.
A. D. Carter, J. J. M. Law , E. Lobisser, G. J. Burek, W. J. Mitchell, B. J. Thibeault, A. C.
Gossard, and M. J. W. Rodwell, “60 nm Gate Length Al
2
O
3
/In
0.53
Ga
0.47
As Gate–First
6

Cirriculum Vitae Jeremy Law
MOSFETs using InAs Source–Drain Regrowth,” presentation at the 2011 Device Research
Conference, Santa Barbara, CA, June 2011.
10.
A. D. Carter, J. J. M. Law , W. J. Mitchell, G. J. Burek, B. J. Thibeault, A. C. Gossard, and
M. J. W. Rodwell, “Gate–First In
0.53
Ga
0.47
As/ Al
2
O
3
MOSFETs with in–situ Channel Surface
Cleaning,” presentation at the 2011 Electronic Materials Conference, Santa Barbara, CA,
June 2011.
11.
G. J. Burek, A. D. Carter, J. J. M. Law , B. J. Thibeault, W. J. Mitchell, and M. J. W.
Rodwell, “Comparison of Metal Deposition Methods by CV Analysis of ALD Al
2
O
3
on
In
0.53
Ga
0.47
As,” presentation at the 2011 Electronics Materials Conference, Santa Barbara,
CA, June 2011.
12.
H. Lu, J. J. M. Law , T. Buehl, P. Burke, and A. C. Gossard, “Varieties of Er–V
Nanostructures Formed in III–V Semiconductors Grown by MBE,” presentation at the 2011
North American Molecular Beam Epitaxy Conference, La Jolla, CA, August 2011.
13.
J. J. M. Law , A. D. Carter, G. J. Burek, B. J. Thibeault, M. J. W. Rodwell, and A. C.
Gossard, “Selective Area Regrowth of Self–Aligned, Low–Resistance Ohmic Contacts on
InGaAs, Late News poster at the 2011 North American Molecular Beam Epitaxy Conference,
La Jolla, CA, August 2011.
14.
J. J. M. Law , A. D. Carter, S. Lee, G. J. Burek, B. J. Thibeault, M. J. W. Rodwell, and A. C.
Gossard, “Selective Area Regrowth of Self–Aligned, Low–Resistance Ohmic Contacts on
InGaAs,” presentation at 58 th International American Vacuum Society International
Symposium, Nashville, TN, October 2011.
15.
J. J. M. Law , A. D. Carter, S. Lee, A. C. Gossard, and M. J. W. Rodwell, “Contact
Resistance Limits of Ohmic Contacts to Thin Semiconductor Channels,” presentation and poster at the 39 th Conference on the Physics and Chemistry of Surfaces and Interfaces, Santa
Fe, NM, January 2012.
16.
J. J. M. Law , A. D. Carter, S. Lee, A. C. Gossard, and M. J. W. Rodwell, “Regrown Ohmic contacts to In x
Ga
1–x
As approaching the Quantum Conductivity Limit,” presentation at the
70 th Device Research Conference, University Park, PA, June 2012.
17.
S. Mehrotra, M. Povolostskyi, J. Law , T. Kubis, G. Klimeck, M. Rodwell, “Design of high– current L–valley GaAs/AlAs
0.56
Sb
0.44
/InP (111) ultra–thin–body nMOFSETs,” presentation at the 39 th International Symposium on Compound Semiconductors, Santa Barbara, CA,
August 2012.
18.
S. Lee, A. D. Carter, J. J. M. Law , H. Lu, A. C. Gossard, and M. J. W. Rodwell “High
Performance Substitutional–Gate MOSFETs Using MBE Source–Drain Regrowth and
Scaled Gate Oxides,” presentation the International Conference on Indium Phosphide and
Related Materials, Santa Barbara, CA, August 2012.
19.
J. J. M. Law , A. D. Carter, S. Lee, C. –Y. Huang, H. Lu, M. J. W. Rodwell, and A. C.
Gossard, “Co–Doping of In x
Ga
1–x
As with Silicon and Tellurium,” poster at the 17 th
International Conference on Molecular Beam Epitaxy, Nara, Japan, September 2012.
20.
J. J. M. Law , I. Calderon, C. –Y. Huang, H. Lu, M. J. W. Rodwell, and A. C. Gossard
“Surface Morphology of GaAs and GaSb (111)A Grown by Molecular Beam Epitaxy,” presentation at the 40 th Conference on Physics and Chemistry of Surface and Interfaces,
Waikoloa, HI, January 2013.
21.
C. –Y. Huang, J. J. M. Law , H. Lu, M. J. W. Rodwell, and A. C. Gossard, “Development of
AlAsSb as a barrier material for sub–10–nm L g
InGaAs channel nMOSFETs,” accepted to the 2013 Spring MRS Meeting.
22.
A. D. Carter, S. Lee, D. C. Elias, C. –Y. Huang, J. M. Law , W. J. Mitchel, B. J. Thibeault,
A. C. Gossard, M. J. W. Rodwell, “65 nm Gate–Last MOSFETs using InGaAs MOCVD
7

Cirriculum Vitae Jeremy Law
Regrowth and Digital Channel Thinning for Improved Device Performance,” submitted as late news to The 71 st Device Research Conference.
23.
S. Lee, C. –Y. Huang, A. D. Carter, J. J. M. Law , D. C. Elias, V. Chobpattana, B. J.
Thibeault, W. Mitchell, S. Stemmer, A. C. Gossard, M. J. W. Rodwell, “High
Transconductance Surface Channel In
0.53
Ga
0.47
As MOSFETs Using MBE Source–Drain
Regrowth and Surface Digital Etching,” submitted to The International Conference on
Indium Phosphide and Related Materials 2013.
24.
S. Lee, C. –Y. Huang, A. D. Carter, D. C. Elias, J. J. M. Law , V. Chobpattana, S. Krämer,
B. J. Thibeault, W. Mitchell, S. Stemmer, A. C. Gossard, and M. J. W. Rodwell, “Record
Extrinsic Transconductance (2.45 mS/µm at V
DS
=0.5 V) InAs/In
0.53
Ga
0.47
As Channel
MOSFETs Using MOCVD Source–Drain Regrowth.” Submitted as late news to 2013 IEEE
Symposium on VLSI Technology.
REFERENCES:
Available upon request.
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