Si3981DV
Vishay Siliconix
Dual P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
ID (A)
0.185 at VGS = - 4.5 V
- 1.9
0.260 at VGS = - 2.5 V
- 1.6
0.385 at VGS = - 1.8 V
- 0.7
3 mm
6
1
APPLICATIONS
• Battery Switch for Portable Devices
• Computers
- Bus Switch
- Load Switch
TSOP-6
Top View
G1
• TrenchFET® Power MOSFET
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D1
S1
S2
2
5
S1
G2
3
4
D2
S2
G1
G2
2.85 mm
Ordering Information:
Si3981DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code:
MCxxx
D1
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
Maximum Power Dissipationa
TA = 70 °C
PD
- 1.6
- 1.5
- 1.3
-8
-1
- 0.72
1.08
0.80
0.69
0.51
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 1.9
IDM
Pulsed Drain Current
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t5s
Maximum Junction-to-Ambienta
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
RthJA
RthJF
Typical
Maximum
97
115
132
155
78
95
Unit
°C/W
Note:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 72502
S13-0631-Rev. E, 25-Mar-13
For technical questions, contact: pmostechsupport@vishay.com
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si3981DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
- 0.40
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
VDS =- 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 1.9 A
0.146
0.185
RDS(on)
VGS = - 2.5 V, ID = - 1.6 A
0.210
0.260
VGS = - 1.8 V, ID = - 0.7 A
0.306
0.385
gfs
VDS = - 5 V, ID = - 1.9 A
4
VSD
IS = - 1 A, VGS = 0 V
- 0.84
- 1.1
3.2
5
VDS = - 10 V, VGS = - 4.5 V, ID = - 1.9 A
0.42
Gate Threshold Voltage
Drain-Source On-State Resistance
a
Forward Transconductancea
Diode Forward Voltage
a
- 1.1
V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
- 10
µA
-5
A

S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Rg
Gate Resistance
f = 1 MHz
VDD = - 10 V, RL = 10 
ID  - 1 A, VGEN = - 4.5 V, Rg = 6 
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr

6
td(on)
Turn-On Delay Time
nC
0.84
IF = - 1 A, dI/dt = 100 A/µs
30
45
50
85
45
85
21
50
20
40
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
8
TC = - 55 °C
VGS = 5 V thru 3 V
7
7
25 °C
6
2.5 V
ID - Drain Current (A)
I D - Drain Current (A)
6
5
4
2V
3
2
125 °C
5
4
3
2
1.5 V
1
1
0
0
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2
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
For technical questions, contact: pmostechsupport@vishay.com
3.0
3.5
Document Number: 72502
S13-0631-Rev. E, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si3981DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
400
0.6
VGS = 1.8 V
350
300
C - Capacitance (pF)
RDS(on) - On-Resistance ()
0.5
0.4
0.3
VGS = 2.5 V
0.2
VGS = 4.5 V
250
Ciss
200
150
100
Coss
0.1
50
Crss
0
0.0
0
1
2
3
4
5
6
0
7
4
8
20
Capacitance
1.6
6
ID = 1.9 A
ID = 1.9 A
5
1.4
4
3
2
VGS = 4.5 V
(Normalized)
VDS = 10 V
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
16
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
1.2
1.0
0.8
1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.6
- 50
4.5
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.5
R DS(on) - On-Resistance ()
10
IS - Source Current (A)
12
TJ = 25 °C
TJ = 150 °C
1
0.4
ID = 1.9 A
0.3
0.2
0.1
0.0
0.1
0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72502
S13-0631-Rev. E, 25-Mar-13
For technical questions, contact: pmostechsupport@vishay.com
6
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si3981DV
Vishay Siliconix
0.3
25
0.2
20
0.1
15
Power (W)
VGS(th) Variance (V)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
ID = 250 µA
0.0
10
- 0.1
5
- 0.2
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.1
0.01
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by IDM
ID - Drain Current (A)
10
Limited by RDS(on)*
1 ms
1
10 ms
Limited by ID(on)
100 ms
10 s, 1 s
DC
0.1
TC = 25 °C
Single Pulse
0.01
0.1
Limited by BVDSS
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 132 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 72502
S13-0631-Rev. E, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si3981DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72502.
Document Number: 72502
S13-0631-Rev. E, 25-Mar-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16
1
Document Number: 91000